BSS138

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel enhancement mode field effect

transistors are produced using Fairchilds proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.

0.22 A, 50 V. RDS(ON) = 3.5 @ VGS = 10 V

RDS(ON) = 6.0 @ VGS = 4.5 V
High density cell design for extremely low RDS(ON)
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package

S
S

SOT-23

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

ID

Drain Current

PD

Maximum Power Dissipation

Continuous

(Note 1)

Pulsed

Operating and Storage Junction Temperature Range

Maximum Lead Temperature for Soldering
Purposes, 1/16 from Case for 10 Seconds

TL

Units

50

20

0.22

0.88
(Note 1)

Derate Above 25C

TJ, TSTG

Ratings

0.36
2.8

W
mW/C

55 to +150

300

350

C/W

Thermal Characteristics
Thermal Resistance, Junction-to-Ambient

RJA

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

SS

BSS138

8mm

3000 units

2005 Fairchild Semiconductor Corporation

BSS138 Rev C(W)

BSS138

October 2005

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min Typ Max

Units

Off Characteristics
BVDSS
BVDSS
TJ
IDSS

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

ID = 250 A
VGS = 0 V,
ID = 250 A,Referenced to 25C
VDS = 50 V,

50

V
72

VGS = 0 V

VDS = 50 V, VGS = 0 V TJ = 125C

IGSS

GateBody Leakage.

On Characteristics

mV/C
0.5

VDS = 30 V,

VGS = 0 V

100

nA

VGS = 20 V,

VDS = 0 V

100

nA

(Note 2)

VGS(th)
VGS(th)
TJ
RDS(on)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient
Static DrainSource
OnResistance

ID(on)
gFS

VDS = VGS,

ID = 1 mA

0.8

ID = 1 mA,Referenced to 25C

OnState Drain Current

ID = 0.22 A
VGS = 10 V,
ID = 0.22 A
VGS = 4.5 V,
VGS = 10 V, ID = 0.22 A, TJ = 125C
VGS = 10 V,
VDS = 5 V

0.2

Forward Transconductance

VDS = 10V,

ID = 0.22 A

0.12

VDS = 25 V,
f = 1.0 MHz

V GS = 0 V,

1.3
2

1.5

0.7
1.0
1.1

3.5
6.0
5.8

V
mV/C

A
0.5

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

RG

Gate Resistance

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

tf

TurnOff Fall Time

Qg

Total Gate Charge

Qgs

GateSource Charge

Qgd

GateDrain Charge

VGS = 15 mV, f = 1.0 MHz

27

pF

13

pF

pF

(Note 2)

VDD = 30 V,
VGS = 10 V,

VDS = 25 V,
VGS = 10 V

ID = 0.29 A,
RGEN = 6

ID = 0.22 A,

2.5

18

ns
ns

20

36

ns

14

ns

1.7

2.4

nC

0.1

nC

0.4

nC

DrainSource Diode Characteristics and Maximum Ratings

IS

Maximum Continuous DrainSource Diode Forward Current

VSD

DrainSource Diode Forward

Voltage

VGS = 0 V,

IS = 0.44 A(Note 2)

0.8

0.22

1.4

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 350C/W when mounted on a

minimum pad..

Scale 1 : 1 on letter size paper

2.

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

BSS138 Rev C(W)

BSS138

Electrical Characteristics

BSS138

Typical Characteristics

VGS = 10V

3.4

6.0V

4.5V

ID, DRAIN CURRENT (A)

0.8

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

3.5V
3.0V

0.6

2.5V
0.4

0.2

2.0V

VGS = 2.5V
2.6
2.2

3.0V
1.8

3.5V
4.0V
4.5V

1.4

6.0V
10V

1
0.6

0
0

0.5

1.5

2.5

0.2

Figure 1. On-Region Characteristics.

0.8

4.1
ID = 220mA
VGS = 10V

1.8

RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

0.6

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6
1.4
1.2
1
0.8

ID = 110mA
3.5
2.9
TA = 125oC
2.3
1.7
TA = 25oC
1.1
0.5

0.6
-50

-25

25

50

75

100

125

150

10

VGS, GATE TO SOURCE VOLTAGE (V)

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.
1

0.6
o

TA = -55 C

0.5

IS, REVERSE DRAIN CURRENT (A)

VGS = 0V

VDS = 10V
ID, DRAIN CURRENT (A)

0.4

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

25 C
125oC

0.4
0.3
0.2
0.1
0

0.1
TA = 125oC
25oC
0.01
-55oC
0.001

0.0001
0.5

1.5

2.5

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

3.5

0.2

0.4

0.6

0.8

1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

BSS138 Rev C(W)

BSS138

Typical Characteristics

100

ID = 220mA

VDS = 8V

f = 1 MHz
VGS = 0 V

25V
80

8
30V

CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (V)

10

60

CISS
40

COSS

20

CRSS
0

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

10

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

40

50

P(pk), PEAK TRANSIENT POWER (W)

100s

1ms
10ms
100ms
1s

RDS(ON) LIMIT
0.1

DC
VGS = 10V
SINGLE PULSE
RJA = 350oC/W

0.01

TA = 25oC
0.001
0.1

10

100

SINGLE PULSE
RJA = 350C/W
TA = 25C

0
0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE TRANSIENT

THERMAL RESISTANCE

30

Figure 8. Capacitance Characteristics.

10

ID, DRAIN CURRENT (A)

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) * RJA

o

0.2

0.1

RJA = 350 C/W

0.1
0.05

P(pk)

0.02
0.01

t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01
SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.

BSS138 Rev C(W)

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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17