MOSFET Amplifiers and High-Frequency Performance

In many applications, MOSFET is used as a linear (small-signal) amplifier

A small signal equivalent circuit for MOSFET is needed to analyze the
MOSFET frequency performance.

Small-Signal equivalent circuit:

The equivalent circuit is constructed from the basic MOSFET geometry
Resistance and capacitances are incorporated
Input and output signals are assumed small as compared to the steady-state
DC current and voltage (operating point)

Operating point is based on the MOSFET I-Vs and circuit conditions

1

MOSFET amplifier: low operating frequencies

Simple FET amplifier circuit:
VL = I RL
Voltage gain KV = VL / VG = ( I RL) / VG
KV = ( I / VG) RL = gm RL
The larger the transconductance gm = I / VG,
the higher is the voltage gain KV
gm is maximal in the saturation regime, i.e.
for VD > VD sat

IS
I1

In the amplifier circuits, FETs usually work

in the saturation regime,
In this regime, current DOES NOT depend
on drain voltage.
Current is the function of the GATE
VOLTAGE ONLY.
2

MOSFET operating point:

Effect of Load Resistance on the output Current amplitude
10
9
8

VG = 4 V

RL

3V

ID, mA

10V

6
5

VG = 3 V

4
3

VG = 2 V

Consider the circuit with the drain bias

VDD= 10 V and the gate bias VGG = 3 V ;

VG = 1 V

1
0
0

10

VD, V

1. Load resistance RL = 5 kOhm

Op. point: VD 1.2 V; ID 1.8 mA;

gm1 (2-1.5)mA/(4-2)V 0.25 mA/V;

2. Load resistance RL = 0.6 kOhm

Op. point: VD 6.8 V; ID 4.5 mA;

gm2 (7-2.4)mA/(4-2)V 2.3 mA/V;

3
In MOSFET amplifiers, the operating point is normally in the saturation region

MOSFET Transfer Characteristics

In saturation regime, the drain current does not depend on the drain voltage
10

Saturation current, mA

9
8

VG = 4 V

ID, mA

6
5

VG = 3 V

4
3
2

VG = 2 V

VG = 1 V

0
0

10

10
9
8
7
6
5
4
3
2
1
0
-1

VD > 7 V

VD, V

2
VG, V

The dependence IDsat (VG) is called

the TRANSFER CHARACTERISTIC of MOSFET
4

MOSFET amplifier: high operating frequencies

S

Cgd

Cgs
rs

rd

gmVgs

IS
I1

Gate to drain
capacitance

Cgd
rd Drain series

Cgs

Gate to source
capacitance

Input
signal
S

resistance
gmVgs

gds

rs Source series
resistance

Slope of ID vs Vds

Output
signal
5

Cgd
rd

Cgs
gds

gmVgs

rs
S
Simplified equivalent circuit diagram

Cgd

+
+

vi

v gs

g
C
gs

ds

vo

Assuming
rd, rs=0

gm v gs

MOSFET Gain
voltage gain
Cgd
Id

I(Cgd)
+

+
+

vi

Input voltage vi = vgs

Output voltage vo = voltage across gds

v gs

g
C
gs

ds

vo
gm v gs

vo can be found using superposition.

1) Assume vi = 0.
The output voltage component is v01
The output current id = i(gds)+i(Cgd)
i(gds) = v01 gds; i(Cgd) = v01 jCgd
From this, id = v01 (gds +jCgd);
On the other hand, id = - gmvgs
Substituting id , we obtain:
- gmvgs = v01 (gds + jCgd);

gm
v01 =
vgs
g ds + jCgd
7

MOSFET Gain
2) Now, turn off the current gmvgs

voltage gain

The output voltage component is v02

The voltage across gds = 1/rds:

Cgd

+
+
vi

v gs

g
C
gs

ds

v02 = vi rds/(rds + 1/jCgd) =

vo

vi rdsjCgd/(jCgdrds + 1) =
vi jCgd/(jCgd + 1/rds) =

gm v gs

vi jCgd/(jCgd + gds);

v02 =

jCgd
g ds + jCgd

vgs

The total output voltage, v0 = v01 + v02:

gm
v01 =
vgs
g ds + jCgd

v0 =

g m + jCgd
g ds + jCgd

vgs
8

MOSFET Gain
voltage gain

The voltage gain:

Cgd

+
+

vi

v gs

ds

C
gs

vo
gm v gs

v0 g m + jCgd
Av =
=
vgs
g ds + jCgd
The gate - drain capacitance is very low
in the saturation region. Hence,

v0
gm
Av =

vgs g ds + jCgd

The voltage gain decreases with frequency when

Corresponding characteristic frequency:

At frequencies f > fv

gm
Av
jCgd

fv

Cgd g ds ;

g ds
2 Cgd

MOSFET Gain

short circuit current gain

Output current, iL = i0 = - gmvgs

Cgd

+
+

vi

v gs

vo

ds

C
gs

gm v gs

Input current, ii = i (Cgs)+ i(Cgs) =

= vi j Cgs + vi j Cgd =
= vi j (Cgs + Cgd);
Also note that vi = vgs;
Therefore: ii = vi j (Cgs + Cgd);

Cgd

+
vi

+
v gs

The current gain: Ai = i0/ii = iL/ii

gm v gs
Cgs

iL

iL
gm
Ai =
=
ii
j Cgs + Cgd

)
10

MOSFET current cutoff frequency fT

fT is the frequency at which the modulus of the short circuit current gain is unity
From:

iL
gm
Ai =
=
ii
j Cgs + Cgd

fT =

gm

2 C gs + Cgd

fT estimation
Assume that Cgs + Cgd ~ Ci where Ci = iWL/di is the gate oxide capacitance.

Transconductance, gm
Consider short-gate MOSFETs at high drain voltage.
In short-gate devices, the electron velocity is saturated: Id = q nsvsW
The transconductance: gm = dId/dVg

I d
ns
gm =
=q
vsW
Vg
Vg

11

MOSFET current cutoff frequency fT

Induced sheet carrier density in MOSFETs (see lecture #18):

ci
Ci
ns = (VGS VT ) =
(VGS VT )
q
qWL
where W is the MOSFET width and L is the gate length
From this,

Ci
I d
ns
gm =
vsW = q
=q
vsW
Vg
Vg
qWL

Ci vs
gm =
L
The cutoff frequency becomes:

fT =

gm
Ci vs
v
=
= s
2 ( Cgs + Cgd ) 2 LCi 2 L

12

gm
Ci vs
vs
fT =
=
=
2 ( Cgs + Cgd ) 2 LCi 2 L
Note that, L/vs = ttr , the electron transit time under the gate
Using this,

fT = 1/ 2ttr

Practical cut-off frequency must also include the parasitic and fringing
capacitances, Cp, which add to the gate capacitance:
fT =

gm

2 C gs + Cgd + C p

13

Maximum oscillation frequency, fmax

The cutoff frequency fT is a characteristic of the
intrinsic transistor (without parasitic series
resistances).
fmax is the characteristic of the extrinsic device
(which includes series source, drain, input, and
gate resistances, Rs, Rd, Ri, and Rg
fmax is defined as the frequency at which the
power gain of the transistor is equal to unity
under optimum matching conditions for the input
and output impedances.
Simplified expression for fmax is given by:

fmax

fT
r + fT

where

In MOSFETs with small parasitic resistances,

RS, Ri and Rd 0

R
d

C gd

+
Gate

v
gs

g
C

Drain

ds

gs

gm v gs

R
i

s
Source

r = gds (Rs + Ri + Rd )

f max

= 2 RgCgd.

fT
fT
=
2 Rg Cgd
f T
14