TECHNOLOGICAL INSTITUTE OF THE PHILIPPINES DEPARTMENT OF ELECTRONICS ENGINEERING FINAL EXAMINATIONS ECE 001 ELECTRONIC CIRCUITS AND DEVICES Name: Student No. Faculty Name: Date of Examination: Section: Schedule (Time/Day) Pledge of Honor if and honesty as I take this examination. I consider it dishonest to ask for, a student of the Technological Institute of the Phi ive, or receive help in this examination, ines - Manila, pledge to exercise integrity I pledge to do all that is in my power to live a life of dignity and credibility and to create that spirit in my environment. ‘Student's Signature Date INSTRUCTIONS: Read the questions carefully. Write the leter ofthe correct answer on the answer sheet. Show your solutions to the problem set on a separate paper. EE A Field Effect Transistor 1. For an n-channel JFET Ipgs = 8 mA and Vp = -6 Volts. Iflp™ 6 mA. What isthe value of the gate-to-source voltage, Vos? A. 0av B -LSV ©. 0.1335 V D. -45V 2. The main difference of a MOSFET from a JFET is that ‘A. JFET has PN junction oBeofthe power rating C. MOSFETS has two gates, D.MOSFETs do not have physical channel 3. Which of the following circuit is the fastest switching device? A. JPET B.BIT C. MOSFET D. Triode 4. Which ofthe following is expected to have the highest input impedance? ‘A. MOSFET B. JFET amplifier C. CE bipolar transistor D. CC bipolar transistor 5. A JFET just operates with specifically ‘A. the drain connected to ground B. gate to source PN junction forward biased C. gate connected to the source . gate to source PN junction reverse biased 6. Junction field effect transistor or JFET has three ‘terminals, which corresponds to the E-B-C of the BJT A.DS-G B.DGS cCsGD D.SDG 7. The operation of BIT involves both the flow of electrons and holes and is therefore, considered as a bipolar device. Unlike BJT, FET’s operation involves only either electrons or holes and is considered as 2 device, A single polar B. unipolar C. dual polar D. polarized 8. An n-channel JFET has a drain-source saturation current Iss 10mA and a gate-source pinch-off voltage Vp= 4V. Ifthe applied reverse gate-source voltage Vos=2V, calculate the drain current Ip, A.2.5mA, B.S.0mA C.10.0ma, C.225mA 9. To switch off the depletion type MOSFET, the channel should be depleted. Depletion of the chimnel is done by applying’ enough voltage across the gate-source terminal. What do you call this voltage? Acpinch-off voltage B. tigger voltage C. Holding voltage D. threshold voltage 10. The base material of a MOSFET which extends as an additional terminal ‘A. source (S) B. channel (C) C. drain (D) D. substrate (SS) 11, Calculate the drain current of a P-channel MOSFET enhancement type ifthe gate-source voltage VGS=- 8V, threshold voltage VT=-4 and a constant k= O.3mAV4 AL2mA B.24mA C.3.6mA D.48mA 12, Which FET operates as close as BIT in terms of switching? AJFET. B. MOSFET depletion type C. MOSFET enhancement type D. IGFET 13, Determine the Rs required for a self-bias JPET to produce a Vos of -¢V when Ip= SmA ‘8 600 ohms B. 700 ohms C.800 ohms | P.900 hms toss = 130A Figure 1 en ee ,DEPARTMENT OF ELECTRONICS ENGINEERING _ FINAL EXAMINATIONS ELECTRONIC CIRCUITS AND DEVICES 14, The graph on figure I shows the transfer characteristic of, E-MOSFET B. D-MOSFET n-channel JFET D. pechannel JFET 15. Ifthe graph on figure 1, willbe use for what kind of MOSFET. ‘A. N-channel D-MOSFET B. P-channel D-MOSFET C. N-channel E-MOSFET D, P-channel E-MOSFET 16. When figure | will be use as the transfer characteristic ofthe correct MOSFET, applying positive Vos between the gate and source terminal will eause the Ip to A. decrease BB. increase beyond Toss CC. maintain loss . be equal to OmA 17. Drain current inthe constant-current area increases when 4. the gate-to-source bias voltage decreases the gate-to-source bias voltage increases «. the drain-to-source bias voltage decrease 4. the drain-to-source bias voltage increases 18, A certain JFET data sheet gives Vos = -4V. The pinch -off voltage, ‘A. cannot be determined _B. depends on Ves Cis-4V Dis +4V 19, An n-channel D-MOSFET with a positive Vos is ‘operating in ‘A. the depletion mode _B. the enhancement mode C cutoff D. Saturation 20. The MOSFET differs to JFET mainly because ‘A. of the power rating B. The MOSFET has wo gates C. the JFET has pa junction D. The MOSFETs do not have physical channel A certain D-MOSFET is biased at Vos -DV. Its data sheet specifies Ipse= 20mA and Ves ua) -SV. The value of the drain current. ‘Avis equal 100A —_B. is difficult to determined Cis equal to 20mA._D. is equal to 10mA 22, A certain p-channel E-MOSFET has a Voss ‘Vos=0V, the drain current is AOA Bilopep C. maximum Di Toss 23, In a certain FET circuit, Vos = OV, Von = 15V, Ings =15mA, and Rp = 470 ohm. If Ro is decreased to 21 2v.If 330 ohm, toss is A.19.5 mA, B.10.5mA. C.1SmA D.ImA 24, The channel of a JFET is between the A. gate and drain B, drain and source C. gate and source DD. input and output 25. For Vos = OV, the drain current becomes maximum ‘when Vas exceeds A. cut-off B. Vo ve D.ov 26, At cut-off, JFET channel is A.atits widest point B. completely closed by the depletion region CC. extremely narrow D. reverse- biased 27. An n-channel D-MOSFET with a positive VGS is. ‘operating in A. depletion mode BB. enhancement mode C. Cut-off D. saturation 28. The constant current area of FET lies between ‘A. cut-off and saturation B. OA and loss C. cut-offand pinch-off D. pinch-off and breakdown 29, The drain current in the constant-current area increases when A. the gate-to-source bias voltage decreases B. the gate-to-source bias voltage increases CC. the drain-to-source voltage increase , the drain-to-source voltage decreases 30. For a certain p-channel JFET, V, ‘VG for an approximately midpoint bias is_ AO BaV .1.25¥ D.234V Figure 2 31, If the value of RD in figure 2is Terese Ip wili A. increase B. decrease C.not change D. either increase or decrease 32, Ifthe value of R2 in figure 2 is increased, Ip will A. increase B. decrease C. not change D. either increase or decrease 33. Determine Ip and Vos for the JFET with the voltage vider bias in figure 2, given that for this particular JFET the internal parameter values are such that Vor7¥ A. Tp 1.52mA, Vos= +1.8V B. Ip=1.S2mA, Vos=- 1.8V C. Ip=l.25mA, Vos = +1.8V Di lor B Page 2 of S pagesTECHNOLOGICAL INSTITUTE OF THE PHILIPPINES DEPARTMENT OF ELECTRONICS ENGINEERING FINAL EXAMINATIONS ELECTRONIC CIRCUITS AND DEVICES 34. If Vos in figure 3, is increased, Ip will A. increase B. decrease C. not change D. either increase or decrease 35. IFR2 in figure 3 opens, Ves will A. increase B. decrease C. not change D. either increase or decrease 36. Determine Vag and Vps for the E-MOSFET circuit in figure 3. Assume this particular MOSFET has inimum values of Io(on)=200mA at Vos=4V and Ve2v ‘A, Vos -3.13V; Vos -11.2V B. Vos= #3.13V ; Vag +11.2V C. Vos= -11.2V; Vos =-3.13V D. Vos=#11.2V ; Vos=43.13V Yop +18V Figure 4 Ry 6202 Vos Ro 10M, 37. Ifthe value of Re in figure 4 is increased, Vo will A. increase B. decrease C. not change . either increase or decrease 38. Ifthe value of IDSS in figure 4, wll increase, VDS will A. increase B. decrease C.not change D. either increase or decrease 39, Determine the drain to source voltage in the circuit of figure 4. The MOSFET data sheet gives V»=-8V and Tass = 12 mA. A.102V B.104V c.106v D.108V 40, Determine the required values of Ry for the network in figures A. Rom 4k. B.Rw 40 C.Ry=3.2k D.Ro=3.20 41, Determine the required values of Rs forthe network in figures ALRs=3.2kQ B.Rs=3.20 C.Rs=0. 4k D.Rs=0.40 iven the measurement Vs=1.7V for the network in figure 6, determine Ing A.3.33mA B. 4.33 mA, C.5.33mA D.633mA 43. Given the measurement Vs=I.7V for the network in figure 6, determine Vosq A4LIV B.-1.7V 422v D.22v 44. Given the measurement Vs=1.7V for the network in figure 6, determine loss A. 11.06mA, B.10.06mA. ©.21.38 ma D.22.38mA 45. Given the measurement Vs=1.7V for the network in figure 6, determine Vos A2nV B.7.13V c.4612 D.9.68v ds is 46. Ina pnp transister, the p region are ‘A. base and emitter B. base and collector C. emitter and collectorD. only the base 47, When operated in cut-off and saturation, the transistor acts like a A. linear amplifier B. switch C. variable capacitor D. variable resistor 48. In common emitter circuit, the input comes from and the output signal is taken ffom A. emitter & base —_B, base & collector C. base & emitter. collector & emitter 49. On the schematic symbol of a PNP transistor, ‘A. the arrow points out on the emitter lead. BB. the arrow points out on the collector lead . the arrow points in on the collector lead . the arrow points in on the emitter lead 50. Once in saturation, a further increase in base current will A. cause the collector current to increase B. does not affect the collector current CC. cause the collector current to decrease D. turn the transistor offTECHNOLOGICAL INSTITUTE OF THE PHILIPPINES DEPARTMENT OF ELECTRONICS ENGINEERING FINAL EXAMINATIONS ELECTRONIC CIRCUITS AND DEVICES 51. The transistor terminals that handles most current A. base B. collector C. emitter D. collector &emitter 52. In a transistor amplifier, what happens to the collector voltage, Ve, when the collector current, fc, increases? A. VC decreases B. VC increases C. VC stays the same D. This is impossible to determine 53. The region or area in a transistor that is heavily doped A.at the junction B. emitter C. collector D. base 54. A given BIT has an alpha of 0.9985 and a collector current of 15 mA. What isthe value of base current? ALIS uA B.22.5uA C.1SmA D.225mA 55. In an emitter bias circuit Rew 2.7 Kohm and Vj The emitter current is A.53mA, B27mA C.180mA, D. cannot be determined 56. The bias condition of a transistor to be used as an amplifier is called A. reverse- forward B. reverse ~ reverse . forward - forward D. forward —reverse 57. Ifa transistor with higher finc is used, the collector current will A. increase B, docrease . not change D, cannot be determined 58, For a common emitter tansfer characteristic curve, increasing the value of Iewill___ the value of Vee A. increase B, decrease C. not change D. either increase or decrease Figure 7 é Re on Ry 59. If Vas in figure 7 is increased, the Q-point value of collector current will A. increase B, decrease C.not change D, either increase or decrease 60. If Vae in figure 7 will increase, the Q-point value of Vee will A. increase B, decrease C.not change D, cannot be determined 61. Using figure 7, solve for the value of Is A.60 HA B. 58.48 pA C.212 HA D.197.87HA 62, Ina voltage-divider npn transistor, ifthe lower voltage divider resistor (the one connected to the ground) opens A. the transistor isnot affected B. the transistor may be driven into cut-off C. the transistor may be driven into saturation, . the emitter resistor is shorted (63. In a voltageccivider biased pnp transistor, there is no ‘base current, but the base voltage is approximately ‘correct. The most likely problem(s) is A. a bias resitar is open B. the collector resistor is open C. the base-emitter junction is open . the emitter resistor is shorted Figure & HOV Ry Re 47 S470 py (64. 1FR1 in figure 8 opens, the collector voltage will A. increase: B. decrease C. not change D. either increase or decrease (65. IF Rin figure 8 is increased, the emitter current will A. increase B. decrease C. not change . cannot be determined 66, Using the network in figure 8, solve for the value of Vee A.48V B3IV c.24Vv D.7.2V 667. Using the network in figure 8, solve for the value of le A.483mA B.S.17mA C.10mA D.16.1 mA, 68. In a certain voltage-divider npn transistor, Ve is 2.95V. ‘The de emitter voltage is approximately A.0.7V B.225V C.2.95V D.3.65V 69. A common base configuration is used as a/an A. impedance matching B, power amplifier, C. current amplifier D. voltage amplifier 70. The emitter current is always A. lesser than the base current B. lesser than the sum ofthe base and collector current CC. greater than the base current D. greater than the sum of base and collector current C. Semiconductor Diode 71. The cathode of a zener diode in a voltage regulator is normally ‘A. more positive than the anode Bat 40.7V, aTECHNOLOGICAL INSTITUTE OF THE PHILIPPINES DEPARTMENT OF ELECTRONICS ENGINEERING FINAL EXAMINATIONS ELECTRONIC CIRCUITS AND DEVICES. C. more negative than the anode D. grounded 72. When diode is used as a resistor is. connected to the diode either in series or parallel A. clamper B. multiplier C. regulator D. clipper 73. A clamper is consists of diode and A. inductor B resistor . transistor D. capacitor 74. A full wave bridge type rectifier is composed of _ diodes and is used to ‘A. two, convert ac to de B. four, converts ac to de C. two, converts de to ac D. four, converts de to ac 75. When a diode is forward-biased and the bias voltage is increased, the forward current will A. increase B. decrease C.no change D. either increase or decrease 76. When a diode is reverse-biased and the bias voltage is increased, the voltage across the diode (assuming the practical model) will A. increase B. decrease wa ained 77. On figure 9; the diode isin connected in__bias A. forward B. reverse C.cither AcrB _D, cannot be determined 78. Determine the current forthe circuit in figure 9 using. the approximate equivalent model for the diode, AOA BLLI3A 4, CLITA D. 1.208 ay si Figure 10 “RV 79. Determine the diode application shown in figure 10. ‘A. clamper B, mult regulator D. clipper 80, Determine the output voltage for the circuit in figure 10, A.-153¥ B.+153V c.-73¥ D.+73V af Figure 11 81. Ifthe input voltage in figure 11 is reduced to 2Vzthe zener current will A. increase B. decrease C.no change D. either increase or decrease 82. FR: in figure 11 is removed, the current through the zener diode will A. increase B. decrease C. no change D. cannot be determined 83. IFR in figure 11 is increased, the current to the load resistor will A, increase B. decrease C.no change D. either increase or decrease 84. Determine the minimum and the maximum load ‘currents for which the zener diode in figure 11 will ‘maintain regulation. Using the following give V2=12V,, Tzk=1 mA and Izm=S0mA. A.0A~255mA —_B, 0A~35.5mA. C.0A=45.5mA —_D.0A~S5.SmA 85. Determine the minimum load resistance for which the zener diode in figure S will maintain regulation. Using the following give V2=12V, I2k=1 mA and Iem=S0mA. A. 436.36 ohm B. 452.83 ohm C.470.59 ohm D. 489.80 ohm 86. The name of the semiconductor material that has an ‘equal number of electrons and holes and ffee from impurities A. netype B. pure type . intrinsic D. petype 87, The process of adding impurities in semiconductor A. growing, B. doping . diffusion D. depleting, 8, Impurities with five valence electrons ‘A. acceptor B. donor C. trivalent D. pentavalent 89. The electrical resistance of a semiconductor material will___as the temperature increases A. inereases B. decreases: C. remains the same _D. increase exponentially ‘90. What is formed when n-type and p-type semiconductor are brought together? A. transistor B. capacitor C. pn junction D. energy band gap