PNP 2N2907 2N2907A

NPN 2N2222 2N2222A

SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N2907 and 2N2907aA are PNP transistors mounted in TO-18 metal package with the collector
connected to the case .
They are primarily intended for high speed switching.
NPN complements are 2N2222 and 2N2222A .
Compliance to RoHS

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

PD

Total Power Dissipation

@ Tamb = 25

PD

Total Power Dissipation

@ Tcase= 25

TJ

Junction Temperature

TStg

Storage Temperature range

Value
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907

Unit

-60
-40
-60
-60
-5
-5

V
V
V

-600

mA

0.4

Watts

1.8

Watts

200

-65 to +200

(1) Applicable up to IC = 500mA

THERMAL CHARACTERISTICS
Symbol

Ratings

RthJ-a

Thermal Resistance, Junction to ambient in

free air

RthJ-c

Thermal Resistance, Junction to case

COMSET SEMICONDUCTORS

2N2907A
2N2907
2N2907A
2N2907

Value

Unit

350

K/W

146

K/W

1/3

PNP 2N2907 2N2907A

NPN 2N2222 2N2222A
ELECTRICAL CHARACTERISTICS
TC=25C unless otherwise noted

Symbol

Ratings

Test Condition(s)

ICBO

Collector Cutoff Current

ICBO

Collector Cutoff Current

ICEX

Collector Cutoff Current

VCEO
VCBO
VEBO

VCB=-50 V, IE=0V
VCB=-50 V, IE=0V
VCB=-50 V, IE=0V, Tj=150C
VCB=-50 V, IE=0V, Tj=150C
VCE=-30 V, VBE=0.5V

Collector Emitter Breakdown

IC=-10 mA, IB=0
Voltage
Collector Base Breakdown
IC=-10 A, IE=0
Voltage
Emitter Base Breakdown
IE=-10 A, IC=0
Voltage
IC=-0.1 mA, VCE=-10 V
IC=-1 mA, VCE=-10 V

hFE

IC=-10 mA, VCE=-10 V

DC Current Gain

IC=-150 mA, VCE=-10 V

IC=-500 mA, VCE=-10 V (1)

VCE(SAT)

VBE(SAT)

Symbol
fT

Symbol

Collector-Emitter saturation
Voltage (1)

Base-Emitter saturation
Voltage (1)

Ratings
Transition frequency

Ratings

IC=-150 mA, IB=-15 mA

IC=-500 mA, IB=-50 mA
IC=-150 mA, IB=-15 mA
IC=-500 mA, IB=-50 mA

2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A -60
-40
2N2907
2N2907A -60
-60
2N2907
2N2907A -5
-5
2N2907
2N2907A
75
2N2907
2N2907A
100
2N2907
2N2907A
100
2N2907
2N2907A
100
2N2907
2N2907A 50
30
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907

Test Condition(s)
IC=-50 mA, VCE=-20 V
f= 100MHz

Delay time
Rise time

IC=-150 mA ,IB =-15 mA

-VCC=-30 V

CC

Collector capacitance

IE= Ie = 0 ,VCB=-10 V
f = 100kHz

CE

Emitter capacitance

IC= Ic = 0 ,VEB=-0.5 V
f = 100kHz

COMSET SEMICONDUCTORS

2N2907A
2N2907
2N2907A
2N2907
2N2907A
2N2907

-10
-20
-10
-20

-50

300

-0.4
-0.4
-1.6
-1.6
-1.3
-1.3
-2.6
-2.6

nA
A
nA
V
V
V

Min Typ Mx Unit

2N2907A 200
200
2N2907

Test Condition(s)

td
tr

Min Typ Mx Unit

MHz

Min Typ Mx Unit

-

10
40

ns

pF

30

pF

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PNP 2N2907 2N2907A

NPN 2N2222 2N2222A
(1) Pulse conditions : tp < 300 s, =2%

MECHANICAL DATA CASE TO-18

DIMENSIONS
mm
A
B
D
E
F
G
H
I
L
Pin 1 :
Pin 2 :
Pin 3 :

12,7
0,49
5,3
4,9
5,8
2,54
1,2
1,16
45

inches
0,5
0,019
0,208
0,193
0,228
0,1
0,047
0,045
45
Emitter
Base
Collector

Information furnished is believed to be accurate and reliable. However, CS assumes no responsability

for the consequences of use of such information nor for errors that could appear.

Data are subject to change without notice.

COMSET SEMICONDUCTORS

3/3