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4.19

Bipolar Junction Transistor_1

Chapter 4

DC ANALYSIS OF BJT CIRCUIT

We have considered the basic characteristics of transistors and


properties. Now, we start analyzing BJT dc circuits. The first step in
analyzing the dc response of a bipolar transistor circuit is to know the
operating region of transistor.
In some cases, it is not simple to find the mode of operation
of transistor. Therefore, we have to guess the state of the transistor,
then analyze the circuit to determine if our assumption was correct
or not. Following step-by-step methodology will enable us to analyze
BJT dc circuits and determine the region of operation of BJT.
M E T H O D O L O G Y

1.
2.
3.
4.
5.

6.

7.

8.

Assume that the transistor is biased in active-region. In


active region VBE = VBE _oni , IB > 0 , and IC = IB .
Find the base current IB by writing the KVL expression for
base-emitter loop (input loop).
Now find the collector current using the relation IC = IB .
Find the value of VCE by writing a the KVL expression for
collector-emitter loop (output loop).
If VCE 2 VCE _sati , initial assumption that the transistor is
in active region is correct. However, if IB 1 0 , then the
transistor is probably cut off. If VCE 1 0 , the transistor is
likely to be working in saturation region.
If the initial assumption has been proved incorrect, then a
new assumption must be made. That is, the transistor is
operating in saturation mode.
For transistor which is assumed to be in saturation, in the
KVL expression for input loop, VBE _ONi should be replaced
by VBE _sati . Similarly, in the KVL expression for output loop,
VCE should be replaced by VCE _sati and IC should be replaced
by IC _sati .
For this assumption, voltage VCB should be such that
transistors collector junction is forward biased. Also, if the
base current is greater than zero and is also greater than
IC _sati / , then, the assumption that the transistor is working
in saturation is correct.

If not mentioned, the value of VBE _oni is taken


as 0.7 V for a silicon transistor and 0.2 V for
Ge transistor.

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Chapter 4

Bipolar Junction Transistor_1

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EXAMPLE 1.1

What is the region of operation of the transistor shown in Figure ?


Assume VCE _sati = 0.2 V , and = 50 and VBE = 0.7 V .
SOLUTION :

Step 1: Assume that the transistor is biased in active-region. In active


region VBE = VBE _activei , IB > 0 , and IC = IB .
Step 2: Find the base current IB by writing the KVL expression for
base-emitter loop (input loop) as shown in Figure.
VBB IB RB VBE (active) = 0.7 V
VBB VBE (active) 3 0.7
IB =
=
= 0.23 mA
10
RB
Step 3: Now find the collector current using the relation IC = IB
IC = IB = _50i_0.23i = 11.5 mA
Step 4: Find the value of VCE by writing the KVL expression for
collector-emitter loop (output loop) as shown in Figure.
VCC IC RC VCE = 0
VCE = VCC IC RC

VCE = 10 11.5 _ 1 i = 1.5 V


Step 5: Since VCE 1 0 , the transistor is likely to be working in
saturation region.
Step 6: Now, we assume that the transistor is in saturation. For
transistor which is assumed to be in saturation, in the KVL expression
for input loop, VBE _activei should be replaced by VBE _sati . Similarly, in the
KVL expression for output loop, VCE should be replaced by VCE _sati and
IC should be replaced by IC _sati
VBB VBE (sat) 3 0.8
IB =
=
= 0.22 mA
10
RB
IC = IB = _50i_0.22i = 11 mA
Collector current in saturation is given by
VCC VCE (sat)
IC (sat) =
RC
= 10 0.2 = 9.8 mA
1.0 k
Since IC > ICsat , we can say that the transistor is in saturation.

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Bipolar Junction Transistor_1

EXAMPLE 1.2

For the circuit shown in Figure, determine the region of operation.


Given that VBE (active) = 0.7 V , VBE (sat) = 0.8 V and VCE (sat) = 0.2 V .
SOLUTION :

Step 1: Assume that the transistor is biased in active-region. In active


region VBE = VBE _oni , IB > 0 , and IC = IB
Step 2: First we find the base current IB by writing the KVL expression
for base-emitter loop (input loop) as shown in Figure.
VBB IB RB VBE = 0
or,
IB = VBB VBE = 5 0.7 = 0.086 mA
50
RB
Step 3: Now find the collector current using the relation IC = IB , so
IC = 100 # 0.086 = 8.6 mA

Step 4: Now we find the voltage VCE by wrinting KVL in the output
loop as shown in Figure.
VCC IC RC VCE = 0
VCE = VCC IC RC

= 10 _8.6 # 2i = 7.2 V

Step 5: Since VCE < VCE (sat) , the transistor is working in saturation.
Step 6: So, we must carry out the analysis again by assuming that the
transistor is in saturation region.
Step 7: For transistor which is assumed to be in saturation, in the
KVL expression for input loop, VBE should be replaced by VBE _sati
. Similarly, in the KVL expression for output loop, VCE should be
replaced by VCE _sati and IC should be replaced by IC _sati
From the base-emitter loop,
VBB VBE _sati
IB =
= 5 0.8 = 0.084 mA
50
RB
and collector current IC is :
VCC VCE (sat)
IC (sat) =
= 10 0.2 = 4.9 mA
2
RC
Step 8: The minimum value of IB required to saturation the transistor

Chapter 4

Chapter 4

Bipolar Junction Transistor_1

is :
IB (min) =

IC (sat)

= 4.9 = 0.049 mA
100
Since IB in the circuit is calculated as 0.084 mA, so it is greater than
IB (min) . Thus the transistor is indeed in saturation mode.

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