Prepared

Ref No.

Product Specifications

Checked

AN7522N

Approved

Total Page

Page No.

Structure

Silicon Monolithic Bipolar IC

Appearance

SIL-12 Pin Plastic Package (Power Type with Fin)

Application

Low Frequency Amplifier

Function

BTL 5.0W x 2ch Power Amplifier

with Standby Function and Volume Function

A-1

Absolute Maximum Ratings

No.

Item

Symbol

Ratings

Unit

Note

Storage Temperature

Tstg

-55 ~ +150

Operating Ambient Temperature

Topr

-25 ~ +70

Operating Ambient Pressure

Popr

Operating Constant Acceleration

Gopr

Operating Shock

Sopr

1.013x1050.61x105
(1.00.6)
9,810
(1000)
4,900
(500)

Pa
(atm)
m/s2
(G)
m/s2
(G)

Supply Voltage

Vcc

14.4

Supply Current

Icc

2.0

Power Dissipation

PD

1.92

Operating Supply Voltage Range

Vcc

Ta=70C

3.5V ~ 13.5V

Note 1) The temperature of all items shall be Ta=25C except storage temperature and
operating ambient temperature.
2) At no signal input.

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Ref No.

Product Specifications

Checked

AN7522N

Approved

Total Page

Page No.

(Unless otherwise specified, the ambient temperature is 25C2C,

Vcc=8.0V, frequency=1kHz and RL=8.)

B Electrical Characteristics

Test
Symbol Cir- Conditions
cuit

No Item

B-1

Limits
min typ max

Unit

Quiescent Circuit
Current

ICQ

Vin=0V, Vol=0V

45

100

mA

Standby Current

ISTB

Vin=0V, Vol=0V

10

Output Noise
3 Voltage

VNO

Rg=10k, Vol=0V

0.10

0.4

mVrms

Voltage Gain

GV

Po=0.5W, Vol=1.25V

31

33

35

dB

Total Harmonic
Distortion

THD

Po=0.5W, Vol=1.25V

0.10

0.5

Maximum Power
Output 1

PO 1

THD=10%, Vol=1.25V

2.4

3.0

Maximum Power
Output 2

PO 2

Vcc=11V
THD=10%, Vol=1.25V

4.0

5.0

Ripple Rejection
Ratio

RR

Rg=10k, Vol=0V
Vr=0.5Vrms, fr=120Hz

30

50

dB

Output Offset
Voltage

Voff

Rg=10k, Vol=0V

-250

250

mV

10 Volume
Attenuation Ratio

Att

Po=0.5W, Vol=0V

70

85

dB

11 Channel Balance 1

CB1

Po=0.5W, Vol=1.25V

-1

dB

12 Channel Balance 2

CB2

Po=0.5W, Vol=0.6V

-2

dB

13 Middle Voltage
Gain

G Vm

Po=0.5W, Vol=0.6V

CT

Po=0.5W, Vol=1.25V

14 Channel Crosstalk

20.5 23.5 26.5

40

55

Note

dB
dB

Note 1) For this measurement, use the BPF = 15Hz ~ 30kHz (12dB/OCT).

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Product Specifications

Checked

(Reference Data for Design)

Total Page

Approved

AN7522N

Page No.

B Electrical Characteristics

Standby pin
current

ISTB2

1 Vin=0V, VSTB=3V

Volume pin
current

IVOL

Input Impedance

Zi

B-2

(Unless otherwise specified, the ambient temperature is 25C2C,

Vcc=8.0V, frequency=1kHz and RL=8.)

Test
Symbol Cir- Conditions
cuit

No Item

Ref No.

Limits
min typ max

Unit

25

1 Vin=0V, Vol=0V

-12

1 Vin=0.3VDC

24

30

36

Note

Note) The above characteristics are reference values determined for IC design, but not guaranteed
values for shipping inspection. If problems were to occur, counter measures will be
sincerely discussed.

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Ref No.

Product Specifications

Checked

AN7522N

Approved

C-1

Total Page

Page No.

(Description of test circuit and test method)

Test Circuit 1

AN7522N
1

+
470

10

270k

7
1.0

5V

Vin1

1.25V

Vin2
0V

0V
Stand-by

12

OUT2
8

10k

68k

Vcc

11

1.0

10k

OUT1
8

10

Volume

Note) If the standby pin is open or 0V, the IC is on standby state.

The IC is in the state of volume minimum if the Volume pin is ground.
The IC is in the state of volume maximum if the Volume pin is open.

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Ref No.

Product Specifications

Checked

AN7522N

Approved

D-1

Total Page

Page No.

Circuit Function Block Diagram

Vcc

+ _

_ +

+ _

Output
GND

_ +

10

11

12

Output
GND

Input
GND

Pin Descriptions
Pin No. Description

Pin No. Description

Vcc

GND (Input)

Ch.1 Output (+)

Ch.2 Input

GND (Ch.1 Output)

Volume

Ch.1 Output (-)

10

Ch.2 Output (-)

Standby

11

GND (Ch.2 Output)

Ch.1 Input

12

Ch.2 Output (+)

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Product Specifications

Checked

AN7522N

Approved

Package Name

Ref No.

Total Page

Page No.

FP-12S

Unit : mm

6.4 0.3

7.7 0.3

7.8 0.3

29.6 0.3
3.5 0.3

1.2 0.1

+0.1
0.25 -0.05

2.54

0.6

R1.8

0.6 0.1

20.00.1

28.0 0.3

29.96 0.3

12

3.6

Company
insignia
Name
of item

Date
Code

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Product Specifications

Checked

AN7522N

Approved

Ref No.

F-1

Total Page

Page No.

(Structure Description)
Chip surface passivation

SiN,

PSG,

Others (

Lead frame material

Fe group,

Cu group,

Others (

2 , 6

Inner lead surface process

Ag plating,

Au plating,

Others (

Outer lead surface process

Solder plating,

Solder dip,

Others (

Chip mounting method

Ag paste,

Au-Si alloy, Solder, Others (

Wire bonding method

Thermalsonic bonding,

Others (

Wire material, Diameter

Au,

Others (

Mold material

Epoxy,

Others (

Molding method

Transfer mold,

Others (

Fin material

Cu Group

Others (

Diameter 38 m

Multiplunger mold,

Package FP-12S

1
4

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Product Specifications

Ref No.

Checked

(Technical Data)

Total Page

Approved

AN7522N

Page No.

Rth(j-c) = 2C/W
Rth(j-a) = 41.7C/W

FP-12S Package Power Dissipation

PD - Ta

13
12

5C/W heat sink

11
10

Power Dissipation, PD (W)

9
8
7

10C/W heat sink

6
5
4

20C/W heat sink

3
2
Single Package
Without heat sink
Rthj-a=41.7C/W

1
0

25

50

70 75

100

125

150

Ambient Temperature, Ta (C)

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation

Prepared

Product Specifications

Ref No.

Checked

(Technical Data)

Total Page

Approved

AN7522N

Page No.

(Precautions for use)

1) Make sure that the IC is free of any pin short-circuiting, ground short, and load shortcircuiting.
2) Ground the radiation fin so that there will be no difference in electric potential between the
radiation fin and ground.
3) The thermal protection circuit operates at a Tj of approximately 150C. The thermal
protection circuit is reset automatically when the temperature drops.
4) Make sure that the heat radiation design is effective enough if the Vcc is comparatively high
or the IC operates high output power.
5) Connect only ground pin for signal sources to the signal GND pin of the amplifier on the
previous stage.
6) The electric surge voltage for this IC low, therefore be extra careful when using the
following pin (at 200pF):
Pin 5=+140V, Pin 6=+140V, Pin 9=+130V, Pin 8=+150V

Eff. Date

Eff. Date

Eff. Date

Eff. Date

25-APR-2000 21-JUL-2000
FMSC-PSDA-002-01

Matsushita Electronics Corporation