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    This document outlines the course units for an Electronic Devices course. The 5 units cover semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices like Zener diodes and tunnel diodes, and power devices and display devices like LEDs, LCDs and solar cells. Key topics included are PN junction characteristics, transistor input/output characteristics, MOSFET operation, and applications of devices like UJTs, SCRs, and optocouplers. The course has 45 total periods and recommended textbooks are listed.

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    syllabus of I year ECE Electronic devices

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    Ec6201 Electronic Devices l t p c

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    This document outlines the course units for an Electronic Devices course. The 5 units cover semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices like Zener diodes and tunnel diodes, and power devices and display devices like LEDs, LCDs and solar cells. Key topics included are PN junction characteristics, transistor input/output characteristics, MOSFET operation, and applications of devices like UJTs, SCRs, and optocouplers. The course has 45 total periods and recommended textbooks are listed.

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    © All Rights Reserved
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    9 views1 page

    Ec6201 Electronic Devices L T P C

    Uploaded by

    Navin
    This document outlines the course units for an Electronic Devices course. The 5 units cover semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices like Zener diodes and tunnel diodes, and power devices and display devices like LEDs, LCDs and solar cells. Key topics included are PN junction characteristics, transistor input/output characteristics, MOSFET operation, and applications of devices like UJTs, SCRs, and optocouplers. The course has 45 total periods and recommended textbooks are listed.

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    of 1

    EC6201

    ELECTRONIC DEVICES

    LTPC
    3003

    UNIT I SEMICONDUCTOR DIODE

    PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias
    characteristics, Switching Characteristics.
    UNIT II BIPOLAR JUNCTION

    NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of CE, CB CCHybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter
    Transistor.
    UNIT III FIELD EFFECT TRANSISTORS

    JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
    significanceMOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, EMOSFET- ,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE
    MOSFET.
    UNIT IV SPECIAL SEMICONDUCTOR DEVICES

    Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode Tunnel


    diode- Gallium Arsenide device, LASER diode, LDR.
    UNIT V POWER DEVICES AND DISPLAY DEVICES

    UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto
    Coupler, Solar cell, CCD.
    TOTAL: 45 PERIODS
    TEXT BOOKS:
    1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc GrawHill Inc. 2007.
    REFERENCES:
    1. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition, 1978.
    2. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice Hall,
    10th edition, July 2008.

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