FMMV2101

to
FMMV2109

SOT23 SILICON PLANAR

VARIABLE CAPACITANCE DIODES
ISSUE 3 JANUARY 1996

PIN CONFIGURATION

PARTMARKING DETAILS
SEE TUNING CHARACTERISTICS

1
3

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Reverse Voltage

VR

30

Forward Current

IF

200

mA

Power Dissipation at Tamb=25C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (at Tamb = 25C).

PARAMETER

SYMBOL

MIN.

Reverse Breakdown
Voltage

VBR

30

Reverse current

IR

Series Inductance

LS

TYP.

MAX.

20
3.0

Diode Capacitance
TCC
Temperature Coefficient

280

Case Capacitance

0.15

CC

400

TUNING CHARACTERISTICS (at Tamb = 25C).

Type No.
FMMV2101
FMMV2103
FMMV2104
FMMV2105
FMMV2107
FMMV2108
FMMV2109

Nominal Capacitance (pF)

VR = 4V, f=1MHz

Min.
6.1
9.0
10.8
13.5
19.8
24.3
29.3

Nom.
6.8
10.0
12.0
15.0
22.0
27.0
33.0

UNIT

CONDITIONS.

IR = 10A

nA

VR = 25V

nH

f=250MHz
Lead length1.5mm

ppm/ C

VR = 4V, f=1MHz
Lead length1.5mm

pF

f=1MHz

Q Figure of MERIT
VR = 4V, f=50MHz

Max.
7.5
11.0
13.2
16.5
24.2
29.7
36.3

450
400
400
400
350
300
280

* SELECTED DEVICE RANGE OFFERED ONLY

3 - 185

Turning Ratio
C2 / C30
f=1MHz
Min.
Max.
2.5
3.3
2.6
3.3
2.6
3.3
2.6
3.3
2.7
3.3
2.7
3.3
2.7
3.3

Partmark
Detail
6R
6G
6H
6J
6L
6M
6N