E-beam Lithography

Abstract
In the world of cutting edge technologies the need for more and
more advanced and faster electronic and micromechanical
devices has increased rabidly, and to satisfy these needs these
devices are getting smaller and smaller and to fabricate these
devices a lot of fabrication techniques emerged in the past few
years, in Micro and Nano fabrication world, Lithography is one of
the fundamental milestones in the fabrication processes. It is
considered to be one of the most important processes in
producing different complicated Nano and Micro structures
nowadays. There are different techniques used in lithography
such

as

photo-lithography,

ion-beam

lithography,

X-ray

lithography and last but not least is the electron-beam (e-beam)

lithography. E-beam lithography is one of the most expensive
lithography methods due to its complicated system structure and
its high precision, it could provide sub-10nm resolution features in
drawing different patterns. So it is uses are limited to the field of
research and producing photo-masks used by other lithography
methods. So in this paper we are going to discuss the working
mechanism of the E-beam Lithography system, its components
where it is similar to the scanning electron microscope (SEM) in
structure with slight modifications in it. We are going to mention
the main difference between it and the different lithography
techniques, its applications, its advantages. Finally we are going
to show

some of its limitations from proximity effect and

scattering of electrons and then show some of the proposed

solutions for these limitations