D882

YOUDA TRANSISTOR
Si NPN TRANSISTOR D882
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BVCBO= 40V
*Collector current up to 3A
*High hFE linearity

PIN CONFIGURATIONS
PIN
1
2
3

ABSOLUTE MAXIMUM RATINGS (Tamb=25 )

PARAMETER
SYMBOL
Collector-Base Voltage
BVCBO
Collector-Emitter Voltage
BVCEO
Emitter-Base Voltage
BVEBO
Tcase=25
Collector Dissipation
PCM
Tamb=25
DC
ICM
Collector Current
Pulse
Icp
Base Current
IB
Junction Temperature
Tj
Storage Temperature
Tstg

SYMBOL
Emitter
Collector
Base

VALUE
40
30
5
10
1
3
7
0.6
+150
-55 +150

ELECTRICAL CHARACTERISTICS

(Tamb=25

PARAMETER

SYMBOL

TEST CONDITIONS

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

ICBO
IEBO
hFE1
hFE2
VCE(sat)

VcB=30V, IE=0
VEB=3V, IC=0
VcE=2V, IC=20mA
VcE=2V, IC=1A
Ic=2A, IB=0.2A

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

VBE(sat)
fT

Output Capacitance

Cob

Ic=2A, IB=0.2A
VcE=5V, IC=0.1A
VcB=10V,
IE=0,f=1MHz

DC Current Gain

CLASSIFICATION OF hFE
RANK
RANGE

,all voltage referenced to GND Unless otherwise specified)

Q
100

UNIT
V
V
V
W
W
A
A
A

MIN

TYP

30
100

160

UNIT

100
100

nA
nA

400
0.5

200
0.3
1.0
80
45

P
200

MAX

2.0

V
MHz
pF

E
320

200

400

WuXi YouDa Electronics Co., Ltd

Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
Tel: 86-510-5205117
86-510-5205108
Fax: 86-510-5205110
Website: www.e-youda.com
SHENZHEN OFFICE Tel
86-755-83740369
13823533350 Fax
86-755-83741418
Ver 3.1

1 of 1

2004-9-20