Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
ICsat Collector saturation current 6 - A
tf Fall time ICM = 6.0 A; IB(end) = 0.85 A 0.2 0.35 µs

PINNING - SOT93 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION c
tab
1 base
2 collector
b
3 emitter

tab collector
1 2 3 e

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 800 V
IC Collector current (DC) - 10 A
ICM Collector current peak value - 25 A
IB Base current (DC) - 6 A
IBM Base current peak value - 9 A
-IB(AV) Reverse base current average over any 20 ms period - 150 mA
-IBM Reverse base current peak value 1 - 6 A
Ptot Total power dissipation Tmb ≤ 25 ˚C - 125 W
Tstg Storage temperature -65 150 ˚C
Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Junction to mounting base - - 1.0 K/W
Rth j-a Junction to ambient in free air 45 - K/W

1 Turn-off current.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
BVEBO Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
VBEsat Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
hFE DC current gain IC = 100 mA; VCE = 5 V 6 13 26
hFE IC = 6 A; VCE = 5 V 5 7 10

DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 115 - pF
Switching times (32 kHz line ICM = 6.0 A; LC = 330 µH; Cfb = 9 nF;
deflection circuit) IB(end) = 0.85 A; LB = 3.45 µH;
-VBB = 4 V; (-dIB/dt = 1.2 A/µs)
ts Turn-off storage time 3.0 4.0 µs
tf Turn-off fall time 0.2 0.35 µs
Switching times (16 kHz line ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
deflection circuit) IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
ts Turn-off storage time 4.5 5.5 µs
tf Turn-off fall time 0.35 0.5 µs

IC / mA
+ 50v
100-200R

250
Horizontal 200
Oscilloscope

Vertical 100

100R 1R
0
6V VCE / V min
30-60 Hz
VCEOsust

Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust.

2 Measured with half sine-wave voltage (curve tracer).

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

ICM + 150 v nominal

TRANSISTOR
adjust for ICM
IC DIODE

Lc
IB IBend

20us 26us
IBend LB T.U.T. BY228
Cfb
64us

VCE -VBB

Fig.3. Switching times waveforms (16 kHz). Fig.6. Switching times test circuit (BU2520A).

ICM hFE BU2520A

TRANSISTOR 100
IC DIODE
Tj = 25 C

t 5V Tj = 125 C

IB IBend
10
t
1V
10us 13us

32us

VCE
1
0.1 1 10 100
t IC / A
Fig.4. Switching times waveforms (32 kHz). Fig.7. Typical DC current gain. hFE = f (IC)
parameter VCE

ICM VBESAT / V BU2520A

1.2
90 %
Tj = 25 C
1.1
Tj = 125 C
IC
1

0.9
10 %
0.8
tf t
ts 0.7 IC/IB=
IB
IBend 3
0.6
4
t 0.5 5
0.4
0.1 1 10
- IBM IC / A
Fig.5. Switching times definitions. Fig.8. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

VCESAT / V BU2520A Eoff / uJ BU2520A

1 1000
IC/IB =
0.9
5
0.8
4 32 kHz
0.7 IC = 6 A
3
0.6
16 kHz
0.5 100 5A
Tj = 25 C
0.4 Tj = 125 C
0.3
0.2
0.1
0 10
0.1 1 10 100 0.1 1 10
IC / A IB / A
Fig.9. Typical collector-emitter saturation voltage. Fig.12. Typical turn-off losses. Tj = 85˚C
VCEsat = f (IC); parameter IC/IB Eoff = f (IB); parameter IC; parameter frequency

VBESAT / V BU2520A ts, tf / us BU2520A

1.2 12
Tj = 25 C 11 ts
16 kHz
1.1 Tj = 125 C 10
9
1 8
7
0.9 6
5 IC =
IC=
0.8 4 6A
8A
3
6A
0.7 2 5A
5A tf
1
4A
0.6 0
0 1 2 3 4 0.1 1 10
IB / A IB / A
Fig.10. Typical base-emitter saturation voltage. Fig.13. Typical collector storage and fall time.
VBEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz

VCESAT / V BU2520A ts, tf / us BU2520A

10 12
Tj = 25 C 11
Tj = 125 C 32 kHz
10
9
8 ts
8A 7
1 6
6A 5
IC =
5A 4
6A
3
IC = 4 A 2 5A
1 tf
0.1 0
0.1 1 10 0.1 1 10
IB / A IB / A
Fig.11. Typical collector-emitter saturation voltage. Fig.14. Typical collector storage and fall time.
VCEsat = f (IB); parameter IC ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

PD% Normalised Power Derating IC / A BU2520A

120
110 100
100 tp =
90
80 ICM = 0.01
70 30 us
60
50 ICDC
40 10
30
20
100 us
10
0
0 20 40 60 80 100 120 140
Tmb / C Ptot
Fig.15. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb) 1

1 ms
Zth / (K/W)
10

1
0.5 0.1

0.2 10 ms
0.1 0.1
0.05
DC
0.02
PD tp tp
0.01 D=
T

D=0 t 0.01
T
0.001
1E-06 1E-04 1E-02 1E+00 1 10 100 1000 VCE / V
t/s Fig.17. Forward bias safe operating area. Tmb = 25 ˚C
Fig.16. Transient thermal impedance. ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Zth j-mb = f(t); parameter D = tp/T Second-breakdown limits independant of temperature.

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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

MECHANICAL DATA

Dimensions in mm 15.2
max
Net Mass: 5 g 14
13.6 4.6
max
2 max 4.25
2
4.15

4.4

21
max
12.7
max

2.2 max

0.5
dimensions within min 13.6
this zone are min
uncontrolled
1 2 3

5.5 0.5 M 0.4

1.15
0.95 1.6
11
Fig.18. SOT93; pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".

November 1995 6 Rev 1.200

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2520A

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1995 7 Rev 1.200