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Self-consistency
Starting from some guess of the input charge density nin(r):
in
in
out
(r) =
fii(r)i(r)
Simply re-inserting nout as nin will almost invariably not converge. Reason: In
order to converge, such procedure must reduce the error at each step, but the
low-frequency (small-G) components of the error will likely not be reduced in typical
condensed-matter systems.
Simple mixing algorithm:
nnew = nout + (1 )nin,
0<<1
Exchange-correlation potential
The exchange-correlation potential and energy in LDA are relatively simple functions
of the local charge density at point r:
Vxc(r) = vxc(n(r)),
Exc[n] =
exc(n(r))n(r)dr
cii(r).
where the matrix elements Hij = i|H|j . For a non-orthonormal basis set, solve:
Total energy
Once convergence is reached, the total energy of the system may be calculated:
E=
where
2
n(r)n(r)
e
drdr
EH =
2
|r r|
Exc[n] =
exc(n(r))n(r)dr
Eionion =
e2
Z Z
2 , | R R |
fii EH +
i
The Hellmann-Feynman theorem holds in DFT due to its variational character!
Once forces are calculated, one can perform structural optimization, molecular
dynamics, etc.
Periodicity
Let us consider the case of the infinite perfect crystals, having translation symmetry.
A perfect crystal is described in terms of
a unit cell that is periodically repeated
a basis of atomic positions di in the unit cell
a lattice of translation vectors R = n1R1 + n2R2 + n3R3
a reciprocal lattice of vectors G such that G R = 2l, with l integer.
Such conditions hold if G = m1G1 + m2G2 + m3G3 with Gi Rj = 2ij .
Defects in crystals:
the supercell is commensurate with the perfect crystal cell. The distance between
periodic replica of the defect must be big enough to minimize spurious defectdefect interactions.
Surfaces:
slab geometry. The number of layers of the materials must be big enough to
have bulk behaviour in the furthest layer from the surface. The number of
empty layers must be big enough to have minimal interactions between layers in
dierent regions.
Alloys, amorphous materials, liquids:
the supercell must be big enough to give a reasonable description of physical
properties.
Band Structure
The one-electron states (r) of a perfect crystal Hamiltonian H = T +V are described
by a band index i and a wave vector k.
It is convenient to consider the thermodynamic limit: a slab of crystal composed of
N = N1N2N3 unit cells, N , obeying Periodic Boundary Conditions:
(r + N1R1) = (r + N2R2) = (r + N3R3) = (r).
There are N wave vectors k in the unit cell of the reciprocal lattice, called the
Brillouin Zone. The one-electron states (energy bands) can be written as
i,k(r) = eikrui,k(r)
where ui,k(r) is translationally invariant:
ui,k(r + R) = ui,k(r).
PW basis set
A PW basis set for states of wave vector k is dened as
1
ei(k+G)r,
r|k + G =
N
2
h
|k + G|2 Ecut
2m
= unit cell volume, N = crystal volume, Ecut = cuto on the kinetic energy of
PWs (in order to have a nite number of PWs!). The PW basis set is complete for
Ecut and orthonormal: k + G|k + G = GG
The components on a PW basis set are the Fourier transform:
|i =
ci,k+G|k + G
ci,k+G = k + G|i =
1
N
Hamiltonian diagonalization
The solution of HKS i = ii at xed potential:
G
requires the diagonalization of the matrix HKS , whose matrix elements are:
HKS (k + G, k + G) = k + G|HKS |k + G
h
(k + G)2GG
k + G|T |k + G =
2m
G
)
2
k + G|VH |k + G = VH (G G ) = 4e
|G G|2
and
where
f (G) =
is the Fourier Transform of f (r).
f (r)eiGrdr
(G = G!)
V(r d R)
cell R
1
i(k+G)r
i(k+G)r
e
V (r d R)e
dr
k + G|V |k + G =
N
R
S(G G)V(G G)
=
type
eiGdi
di cell
Charge density
The calculation of the charge density
n(r) =
fi,ki, k(r)i,k(r)
i,k
iGr
n(r)e
dr =
G
fi,kci,k+G ci,k+G+G
i,k
0.5
1.5
2
2.5
r (a.u.)
3.5
Need to:
get rid of core states
get rid of orthogonality wiggles close to the nucleus
Solution: Pseudopotentials (PP). A smooth eective potential that reproduces the
eect of the nucleus plus core electrons on valence electrons.