Philips Semiconductors

Product specification

Triacs

BT136 series

GENERAL DESCRIPTION
Glass passivated triacs in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.

PINNING - TO220AB
PIN

DESCRIPTION

main terminal 1

main terminal 2

gate

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX. MAX. MAX. UNIT

VDRM

BT136BT136BT136Repetitive peak off-state

voltages
RMS on-state current
Non-repetitive peak on-state
current

500
500F
500G
500

600
600F
600G
600

800
800F
800G
800

4
25

4
25

4
25

A
A

IT(RMS)
ITSM

PIN CONFIGURATION

SYMBOL

tab

T2

tab

T1

1 23

main terminal 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

VDRM

Repetitive peak off-state

voltages

IT(RMS)
ITSM

RMS on-state current

Non-repetitive peak
on-state current

I2t
dIT/dt

IGM
VGM
PGM
PG(AV)
Tstg
Tj

I2t for fusing

Repetitive rate of rise of
on-state current after
triggering

Peak gate current

Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature

CONDITIONS

MIN.
-

full sine wave; Tmb 107 C

full sine wave; Tj = 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
T2+ G+
T2+ GT2- GT2- G+

over any 20 ms period

MAX.
-500
5001

-600
6001

UNIT
-800
800

25
27
3.1

A
A
A2s

-40
-

50
50
50
10
2
5
5
0.5
150
125

A/s
A/s
A/s
A/s
A
V
W
W
C
C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/s.
August 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT136 series

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient

Rth j-a

CONDITIONS

MIN.

TYP.

MAX.

UNIT

60

3.0
3.7
-

K/W
K/W
K/W

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

IGT

Gate trigger current

IL

Latching current

IH

Holding current

VT
VGT

On-state voltage
Gate trigger voltage

ID

Off-state leakage current

CONDITIONS

MIN.

BT136VD = 12 V; IT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
T2+ G+
T2+ GT2- GT2- G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 C
VD = VDRM(max);
Tj = 125 C

TYP.

MAX.

UNIT

...

...F

...G

5
8
11
30

35
35
35
70

25
25
25
70

50
50
50
100

mA
mA
mA
mA

7
16
5
7
5

20
30
20
30
15

20
30
20
30
15

30
45
30
45
30

mA
mA
mA
mA
mA

0.25

1.4
0.7
0.4

1.70
1.5
-

V
V
V

0.1

0.5

mA

MIN.

TYP.

MAX.

UNIT

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

dVD/dt

Critical rate of rise of

off-state voltage

dVcom/dt

Critical rate of change of

commutating voltage

tgt

Gate controlled turn-on

time

August 1997

CONDITIONS
BT136VDM = 67% VDRM(max);
Tj = 125 C; exponential
waveform; gate open
circuit
VDM = 400 V; Tj = 95 C;
IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/s

...
100

...F
50

...G
200

250

V/s

10

50

V/s

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT136 series

BT136

Ptot / W

Tmb(max) / C

101

IT(RMS) / A

BT136

104

7
6

= 180

107 C

4
107

120
5

110

90
60

113

30
3

116

119

122

3
IT(RMS) / A

125
5

0
-50

Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where = conduction angle.

1000

50
Tmb / C

100

150

Fig.4. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.

BT136

ITSM / A

12

BT136

IT(RMS) / A

ITSM

IT

10
T

time

Tj initial = 25 C max
100

6
dIT /dt limit

4
T2- G+ quadrant

2
10
10us

100us

1ms
T/s

10ms

0
0.01

100ms

Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.

30

ITSM / A

BT136

Tj initial = 25 C max

1.2
1

10

0.8

0.6

10
100
Number of cycles at 50Hz

0.4
-50

1000

Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

August 1997

BT136

1.4

time

15

VGT(Tj)
VGT(25 C)

I TSM

IT

20

10

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 107C.

1.6

25

0.1
1
surge duration / s

50
Tj / C

100

150

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25C), versus junction temperature Tj.

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT136 series

IGT(Tj)
IGT(25 C)

Tj = 125 C
Tj = 25 C

T2+ G+
T2+ GT2- GT2- G+

2.5
2

0.5

50
Tj / C

100

150

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25C), versus junction temperature Tj.

IL(Tj)
IL(25 C)

max

Vo = 1.27 V
Rs = 0.091 ohms

typ

10

1.5

0
-50

BT136

IT / A

12

BT136

0.5

1.5
VT / V

2.5

Fig.10. Typical and maximum on-state characteristic.

10

TRIAC

BT136

Zth j-mb (K/W)

unidirectional

2.5

bidirectional
1

2
1.5
0.1

P
D

tp

0.5

0
-50

50
Tj / C

100

0.01
10us

150

IH(Tj)
IH(25C)

1ms

10ms

0.1s

1s

10s

tp / s

Fig.11. Transient thermal impedance Zth j-mb, versus

pulse width tp.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),

versus junction temperature Tj.

0.1ms

1000

TRIAC

dVcom/dt (V/us)
off-state dV/dt limit
BT136...G SERIES

2.5

BT136 SERIES

100

BT136...F SERIES

1.5
10

1
0.5
0
-50

dIcom/dt = 5.1
A/ms

50
Tj / C

100

150

50

2.3

1.8
100

1.4
150

Tj / C

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

Fig.9. Normalised holding current IH(Tj)/ IH(25C),

versus junction temperature Tj.

August 1997

3.9

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT136 series

MECHANICAL DATA
Dimensions in mm

4,5
max

Net Mass: 2 g

10,3
max
1,3

3,7
2,8

5,9
min

15,8
max

3,0 max
not tinned

3,0

13,5
min
1,3
max 1 2 3
(2x)

0,9 max (3x)

2,54 2,54

0,6
2,4

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

August 1997

Rev 1.200

Philips Semiconductors

Product specification

Triacs

BT136 series

DEFINITIONS
Data sheet status
Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification

This data sheet contains final product specifications.

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

August 1997

Rev 1.200

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