SEMICONDUCTOR

TIP122

TECHNICAL DATA

EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
E

A
R
S

FEATURES

High DC Current Gain : hFE=1000(Min.) at VCE=3V, IC=3A.

High Collector Breakdown Voltage : VCEO=100V(Min.)

L
C

MAXIMUM RATING (Ta=25)

RATING

UNIT

Collector-Base Voltage

VCBO

100

Collector-Emitter Voltage

VCEO

100

Emitter-Base Voltage

VEB0

DC

IC

Pules

ICP

IB

0.12

PC

65

Tj

150

Tstg

-55150

Collector Current
Base Current
Collector Power Dissipation
(Tc=25)
Junction Temperature
Storage Temperature Range

K
1

SYMBOL

CHARACTERISTIC

1. BASE
2. COLLECTOR (HEAT SINK)

DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T

MILLIMETERS
10.30 MAX
15.30 MAX
0.80
_ 0.20
3.60 +
3.00
6.70 MAX
_ 0.50
13.60 +
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
_ 0.20
9.50 +
_ 0.20
8.00 +
2.90 MAX

3. EMITTER

TO-220AB

EQUIVALENT CIRCUIT
C
B

R2

R1
= 8k

= 120k

ELECTRICAL CHARACTERISTICS (Ta=25)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=100V, IE=0

0.2

mA

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

mA

V(BR)CEO

IC=10mA, IB=0

100

hFE(1)

VCE=3V, IC=0.5A

1000

10000

hFE(2)

VCE=3V, IC=3A

1000

VCE(sat)(1)

IC=3A, IB=12mA

VCE(sat)(2)

IC=5A, IB=20mA

Base-Emitter Voltage

VBE

VCE=3V, IC=3A

2.5

Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

300

pF

Collector-Emitter Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

1999. 11. 16

Revision No : 1

1/2

TIP122

h FE - I C
3.5

VCE =3V

I C /I B =250

5K

SATURATION VOLTAGE
VCE(sat) ,VBE(sat) (V)

DC CURRENT GAIN hFE

10k

VCE(sat) , VBE(sat) - I C

3k

1k
500
300

100
0.1

3.0
2.5
2.0
1.5

V BE(sat)

1.0

VCE(sat)

0.5
0.3

0.5

0.1

10

0.3

10

20

COLLECTOR CURRENT I C (A)

COLLECTOR CURRENT I C (A)

P C - Ta

SAFE OPERATING AREA

COLLECTOR CURRENT I C (A)

80
60
40
20

10
5
3

s
1000s
50 ms
1

POWER DISSIPATION PC (W)

100
5m
s
DC

1
0.5
0.3
0.1
0.05
0.03
0.01

0
0

40

80

120

160

200

10

30

50

100

200

COLLECTOR-EMITTER VOLTAGE VCE (V)

AMBIENT TEMPERATURE Ta ( C)

OUTPUT AND INPUT CAPACITANCE

vs. REVERSE VOLTAGE
CAPACITANCE C ob(pF) ,C ib(pF)

1k

f=1MHz

500
300

100
Cob

50
30

Cib

10
0.1

0.3

10

30

100

COLLECTOR-BASE VOLTAGE V CB (V)

EMITTER-BASE VOLTAGE VEB (V)

1999. 11. 16

Revision No : 1

2/2

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