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320lecture14 PDF
320lecture14 PDF
Lecture 14
Page 1 of 9
rd =
nVT
ID
Whites, EE 320
Lecture 14
Page 2 of 9
Determine r
Assuming the transistor in this circuit
(Fig. 5.48a)
is operating in the active mode, then
i
1
IC
iB = C =
I
vbe
+
N
NC
(5.84) DC V
T
N
AC
I
g
so that
ib = C vbe = m vbe
VT
(1)
(5.90),(5.91),(2)
Whites, EE 320
Lecture 14
Page 3 of 9
(Fig. 1)
Notice the AC ground in the circuit. This is an extremely
important concept. Since the voltage at this terminal is held
constant at VCC, there is no time variation of the voltage.
Consequently, we can set this terminal to be an AC ground in
the small-signal circuit.
For AC grounds, we kill the DC sources at that terminal: short
circuit voltage sources and open circuit current sources.
So, from the small-signal equivalent circuit above:
(Fig. 2)
we see that
Whites, EE 320
Lecture 14
Page 4 of 9
vbe
ib
(5.92),(3)
r =
Hence, using (2) in (3)
r =
[]
(5.93),(4)
gm
This r is the BJT active mode small-signal input resistance of
the BJT between the base and the emitter as seen looking into
the base terminal. (Similar to a Thvenin resistance, this
statement means we are fictitiously separating the source from
the base of the BJT and observing the input resistance, as
indicated by the dashed line in Fig. 2.)
Determine re
Well determine re following a similar procedure as for r, but
beginning with
i
I
i
(5)
iE = C = C + c
N
N
DC
AC
(5.96),(6)
or with I E = I C ,
ie =
IE
vbe
VT
(5.96),(7)
Whites, EE 320
Lecture 14
Page 5 of 9
ve
(8)
ie
Assuming an ideal signal voltage source, then ve = vbe and
v
re be
(5.97),(9)
ie
Using (7) in this equation we find
V
(5.98),(10)
re = T
IE
But from (5.87)
I
I
V
gm = C = E T =
I E gm
VT
VT
re
Whites, EE 320
Lecture 14
Page 6 of 9
1
[]
(5.99),(11)
gm gm
This is the BJT active mode small-signal resistance between the
base and emitter seen looking into the emitter.
re =
r = ( + 1) re []
(5.100),(12)
Hybrid- Model
Version A.
Whites, EE 320
Lecture 14
Page 7 of 9
(Fig. 5.51a)
Lets verify that this circuit incorporates all of the necessary
small-signal characteristics of the BJT:
9 ib = vbe r as required by (3).
9 ic = g m vbe as required by (5.86), which we saw in the last
lecture.
9 ib + ic = ie as required by KCL.
We can also show from these relationships that ie = vbe re .
(Fig. 5.51b)
Whites, EE 320
Lecture 14
Page 8 of 9
T Model
The hybrid- model is definitely the most popular small-signal
model for the BJT. The alternative is the T model, which is
useful in certain situations.
The T model also has two versions:
Version A.
(Fig. 5.52a)
Version B.
Whites, EE 320
Lecture 14
Page 9 of 9
(Fig. 5.52b)
The small-signal models for pnp BJTs are identically the same
as those shown here for the npn transistors. It is important to
note that there is no change in any polarities (voltage or current)
for the pnp models relative to the npn models. Again, these
small-signal models are identically the same.