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Introduction

Fuji Smart power device ：M-POWER2

for Multi-oscillated current resonant type power supply

Summary

System: The ideal and Fuji’s original system

It includes many functions(Soft-switching,stand-by).

Device： Multiple-chip Power Device：M-POWER2
contains IC and two MOSFETs in SIP-13pin package.
M-POWER has various types of protection functions.

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Features

1. High efficiency (a reduction in SMPS size is possible.)

DC/DC : 92.3%(DC input:400V,output:16V)
PFC+DC/DC :87.0%(AC100V),89.5%(AC200V)
2. Built in stand-by mode (An auxiliary power supply is unnecessary.)
Pin<0.4W at Pout=0.0W
Pin<1.0W at Pout=0.5W
Pin<4.0W at Pout=2.0W
3. Low noise
(a reduction in the noise suppression parts is possible.)
MOSFETs： Turn-on : ZVS+ZCS
Turn-off : ZVS
Diodes(secondary side)
Surge voltage does not occur at reverse recovery.
4. Fail-safety (Built in protection functions:OC,SC,OV,Tj(OH))
5. Easy design power supply (Reduction of design time)

Down size your SMPS

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Circuit configuration

Multi-oscillated current resonant type power supply

Self-
Self-oscillation circuit Cr
IQ2 VD1,ID1
Tr
Q2

rectification circuit or PFC

VQ2
Vo
VP1
M-POWER2
IQ1 VG2

Ed PWM Q1
VD2,ID2
ＩＣ VQ1

VG1
Vｓ

Normal / Stand-by signal

Q1 ------ PWM oscillation

Q2 ------ self-oscillation (driven by winding voltage).

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Operation of switching transient
② ④
Self-
Self-oscillation circuit
Cr ① ③
IQ2 VD1,ID1 VP2，VG2 Vth(Q2)
Q2 VP1
Tr VP2
rectification circuit or PFC

0
VQ2 VG2
Vo
VG2
Dead time:Td
Ed
VG1
PWM IQ1 0
Q1 VD2,ID2 Feedback voltage
ＩＣ VQ1
comparison voltage
0
VG1 Vｓ

VQ2 VQ1
VQ1,VQ2
Feedback voltage
0

IQ1 IQ2
Normal / Stand-by signal
IQ1,IQ2
0

VP1
Features of the Multi-oscillation VP1，VP3
VP3
0

1) No arm-short circuit.

2) it is high efficiency at light load too. ID1 ID2

ID1,ID2
0

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Efficiency comparison
PFM V.S. M-POWER2(Muiti oscillation)

AC200V 15V単出力
Vo=15V 周波数制御
PFM
With
PFCあり PFC M-POWER2
ＰＷＭ
95

Efficiency[%] 90

85
効率[%]

80

75

70

65
0 20 40 60 80 100
出力電力[W]
Output [W]

It is high efficiency at light load too.

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Switching waveforms
Ultra Low Noise
Condition:Ed=400V,Po=65W,Vo=16V
MOSFETs(Q1,Q2) Diodes(Secondary side)
No surge voltage

DiNo surge voltage

VQ2
0
0 VD1

0 IQ2 D1 Sine wave-like current

ID1
0
ZVS ZVS+ZCS
Rectangle wave-like voltage
0
0
VQ1 VD2

0 IQ1 D2
0 ID2
ZVS ZVS+ZCS

VD1:50V /DIV
VQ1 ：500V /DIV
Turn-on : ZVS+ZCS IQ1 ：1A /DIV
ID1:10A /DIV
VD2:50V /DIV
Turn-off : ZVS VQ2 ：500V /DIV No surge voltage at reverse recovery ID2:10A /DIV
IQ2 ：1A /DIV
No surge voltage at Turn-off 5us/DIV
5us/DIV

Reduction in the noise suppression parts is possible.

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Characteristic

High efficiency
100

DC/DC DC/DC : 92.3%

(DC input:400V,output:16V)
90 AC200V
Efficiency (%)

AC100V PFC+DC/DC:87.0%
(AC100V),89.5%(AC200V)

80

70
0 20 40 60 80 100
Output (W)
Efficiency - Load characteristic at normal mode

Down size your SMPS

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Performance
Power saving operation

‘Soft-start and soft-end switching of M-POWER2 reduce transformer noise.

VCS
2V/div 2V/div
VCS
0 0

0.8A/div 0.8A/div
IP1 IP1
0 0

ｔ：2ms/div ｔ：500μs/div

Condition:AC100V,Pout=0.5W Condition:AC240V,Pout=0.5W

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Characteristic Power saving operation

4.0

3.5

3.0 Pin<0.4W at Pout=0.0W

2.5 Pin<1.0W at Pout=0.5W
Input:Pin [W]

Pin<4.0W at Pout=2.0W
2.0

1.5

1.0

0.5

0.0
0.0 0.5 1.0 1.5 2.0 2.5
Output:Po [W]
Input power – output power characteristic at standby mode

No sub power supply required for stand-by

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M-POWER2
Main-MOSFET Sub-MOSFET Control IC
Type name Sam ple
V DS R DS(ON) V DS R DS(ON) V CC(ON) T j(OH)
125 ∼
F9221L 500V 0.9 Ω 500V 0.9 Ω 16.5V M/P
150 ℃
125 ∼
F9222L 500V 0.6 Ω 500V 0.6 Ω 16.5V 02/09
150 ℃

External view of M-POWER2

PKG：H:10.2mm×W:31.0mm×T:3.5mm Unit:mm

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