ECSE‐2210, Microelectronics Technology, Prof. E. F.

 Schubert 

BJT – Ebers-Moll-model

 Ebers-Moll Model
(Developed by Ebers and Moll in 1954)
Also called the “Coupled Diode Model”
Two diodes: The EB and CB diode

o Charge distribution in the Base:

Chapter 21 – page 1 
 ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert 

o Under Normal operation (Subscript N), it is pC = 0

Using pC = 0 and the results of the last chapter, we have:

I EN  a p E I CN  b p E (1)

o Under Inverted operation (Subscript I), it is p E  0

Using pE = 0 and the results of the last chapter, we have:

I EI   b pC I CI   a p C (2)

o In Eqs. (1) and (2), it is

Dp W
a  eA coth B (3)
Lp Lp
Dp W
b  eA cosech B (4)
Lp Lp

o Superposition of the two currents:

IE  I EN  I EI (5)

 a p E  b p C (6)

 a pn0 (e eVEB / kT  1)  b pn0 (e eVCB / kT  1) (7)

IC  I CN  I CI (8)

 b pE  a pC (9)

 b pn0 (eeVEB / kT  1)  a pn0 (eeVCB / kT  1)   (10)

The superposition of normal operation currents and inverted operation currents

yields two equations (Eqs. 7 and 10) valid for any operating condition.

Chapter 21 – page 2 
 ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert 

o The four currents IEN, IEI, ICN, and ICI can also be written in the following way:

Normal operation (VBE = forward VCB = reverse)

I EN  I ES (eeVEB / kT  1)   (11)

I CN   N I EN   N I ES (eeVEB / kT  1)   (12)

 N … current amplification in normal operation 

Inverted operation  (VEB = reverse VCB = forward) 

I CI   I CS (eeVCB / kT  1)   (13)

I EI   I I CI    I I CS (eeVCB / kT  1)   (14)

 I … current amplification in inverted operation 

 
 
Superposition of Normal and Inverted operation:
(Why are we allowed to superimpose?  Linear processes)

  
I E  I EN  I EI  I ES eeVEB / kT  1   I I CS eeVCB / kT  1    (15)
 
 

  
I C  I CN  I CI   N I ES eeVEB / kT  1  I CS eeVCB / kT  1    (16)
 
… these are the Ebers-Moll Equations

o Ebers-Moll Equations have general validity

(Normal and Inverted operation)

o Eq. (15): Emitter current

First term: Diode equation (EB)
Second term: A current controlled by CB diode

o Eq. (16): Collector current

First term: A current controlled by EB diode
Second term: Diode equation (CB)

Chapter 21 – page 3 
 ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert 

 We can construct an equivalent circuit from the Ebers-Moll Equations

o Ebers-Moll equivalent circuit for all operating conditions:

o Ebers-Moll equivalent circuit for normal operating conditions:

CB diode is reverse biased  I 'C  0

 Ebers-Moll equivalent circuit is the bridge between internal device physics and electronic
circuits.

Chapter 21 – page 4 
 ECSE‐2210, Microelectronics Technology, Prof. E. F. Schubert 

 Ebers-Moll output characteristic:

Chapter 21 – page 5