This document summarizes research on the simulation and fabrication of microcavities based on porous silicon multilayers in the infrared spectrum. A team of researchers from the Institute of Materials Science and Thai Nguyen University of Education used an electrochemical etching process with varying current densities to create a porous silicon multilayer, which forms the basis of a microcavity structure when inserted between two symmetric Bragg reflectors. Simulation of the microcavity properties and reflection spectra was performed using the Transfer Matrix Method. Experimental determination of suitable period numbers for the Bragg reflectors was also conducted.
This document summarizes research on the simulation and fabrication of microcavities based on porous silicon multilayers in the infrared spectrum. A team of researchers from the Institute of Materials Science and Thai Nguyen University of Education used an electrochemical etching process with varying current densities to create a porous silicon multilayer, which forms the basis of a microcavity structure when inserted between two symmetric Bragg reflectors. Simulation of the microcavity properties and reflection spectra was performed using the Transfer Matrix Method. Experimental determination of suitable period numbers for the Bragg reflectors was also conducted.
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This document summarizes research on the simulation and fabrication of microcavities based on porous silicon multilayers in the infrared spectrum. A team of researchers from the Institute of Materials Science and Thai Nguyen University of Education used an electrochemical etching process with varying current densities to create a porous silicon multilayer, which forms the basis of a microcavity structure when inserted between two symmetric Bragg reflectors. Simulation of the microcavity properties and reflection spectra was performed using the Transfer Matrix Method. Experimental determination of suitable period numbers for the Bragg reflectors was also conducted.
Copyright:
Attribution Non-Commercial (BY-NC)
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Download as DOC, PDF, TXT or read online from Scribd
based on porous silicon multilayer Nguyen Thuy Van 1, Do Thuy Chi 2, PhamVan Hoi 1 and Bui Huy 1 1 Institute of Materials Science, VAST 18 Hoang Quoc Viet Str., Cau Giay Dist., Hanoi, Vietnam 2 Thai Nguyen University of Education, Luong Ngoc Quyen road, Thai Nguyen city, Vietnam * Corresponding author: vannt@ims.vast.ac.vn
Abstract: In this paper we present the results in
simulation and elaboration of microcavities based on porous silicon multilayer in the infrared. The porous silicon multilayer is fabricated by an electrochemical etching of a silicon wafer with timely repeat steps of applied current densities. The simulation is relying on the Transfer Matrix Method (TMM) to design and predict the properties of microcavity as well as the relation between electrochemical parameters with of reflection spectra. Structurally, microcavity consists of a cavity layer inserted in between two symmetric Bragg reflectors. Appropriate period numbers of the reflector in porous silicon microcavities have been determined by experiment.