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HỘI NGHỊ QUANG HỌC QUANG PHỔ TOÀN QUỐC LẦN THỨ VI

(Hà Nội, Việt Nam. 8-12 THÁNG 11 NĂM 2010)

Study and fabrication of microcavity


based on porous silicon multilayer
Nguyen Thuy Van 1, Do Thuy Chi 2, PhamVan Hoi 1
and Bui Huy 1
1
Institute of Materials Science, VAST 18 Hoang Quoc
Viet Str., Cau Giay Dist., Hanoi, Vietnam
2
Thai Nguyen University of Education, Luong Ngoc
Quyen road, Thai Nguyen city, Vietnam
* Corresponding author: vannt@ims.vast.ac.vn

Abstract: In this paper we present the results in


simulation and elaboration of microcavities based on
porous silicon multilayer in the infrared. The porous
silicon multilayer is fabricated by an electrochemical
etching of a silicon wafer with timely repeat steps of
applied current densities. The simulation is relying on the
Transfer Matrix Method (TMM) to design and predict the
properties of microcavity as well as the relation between
electrochemical parameters with of reflection spectra.
Structurally, microcavity consists of a cavity layer inserted
in between two symmetric Bragg reflectors. Appropriate
period numbers of the reflector in porous silicon
microcavities have been determined by experiment.

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