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Micro Strip Antennas Overview
Micro Strip Antennas Overview
David R. Jackson
Dept. of ECE
University of Houston
Overview of Microstrip Antennas
Also called “patch antennas”
Microstrip Antenna Integrated into a System: HIC Antenna Base-Station for 28-43 GHz
L x
h
x
L
Advantages of Microstrip Antennas
Hence E ≈ zˆ Ez ( x, y )
E z ( x, y )
h
Thin Substrate Approximation
Magnetic field inside patch cavity:
1
H =− ∇× E
jωμ
∇ × ( zEˆ z ( x, y ) )
1
=−
jωμ
=−
1
jωμ
( − zˆ × ∇Ez ( x, y ) )
Hence
H ( x, y ) =
jωμ
(
1
zˆ × ∇E ( x, y ) )
z
Thin Substrate Approximation (cont.)
H ( x, y ) =
1
jωμ
( zˆ × ∇E ( x, y ) )
z
E z ( x, y )
h
H ( x, y )
Magnetic Wall Approximation
On edges of patch, y
J s ⋅ nˆ = 0 Js
W n̂
Also, on lower surface of tˆ
patch conductor we have x
J s = ( − zˆ × H ) L
Js
n̂
Hence, h
Ht = 0
Magnetic Wall Approximation (cont.)
y
Since the magnetic field is
approximately independent of z,
we have an approximate PMC
Js
condition on the edge. W tˆ n̂
x
H t = 0 (PMC) L
n̂
h
PMC
Magnetic Wall Approximation (cont.)
nˆ × H ( x, y ) = 0 y
H ( x, y ) =
1
jωμ
( zˆ × ∇E ( x, y ) )
z
Js
W tˆ n̂
Hence,
x
nˆ × ( zˆ × ∇Ez ( x, y ) ) = 0 L
zˆ ( nˆ ⋅∇Ez ( x, y ) ) = 0
n̂
h
∂Ez
=0
∂n PMC
Resonance Frequencies
y
∇ Ez + k Ez = 0
2 2
⎡ ⎛ mπ ⎞ 2 ⎛ nπ ⎞ 2 ⎤
⎢− ⎜ ⎟ −⎜ ⎟ + k ⎥ Ez = 0
2
⎢⎣ ⎝ L ⎠ ⎝ W ⎠ ⎥⎦
⎡ ⎛ mπ ⎞ 2 ⎛ nπ ⎞ 2 ⎤
⎢− ⎜ ⎟ −⎜ ⎟ +k ⎥ =0
2
Hence
⎢⎣ ⎝ L ⎠ ⎝ W ⎠ ⎥⎦
Resonance Frequencies (cont.)
y
⎛ mπ ⎞ ⎛ nπ ⎞
2 2
k =⎜
2
⎟ +⎜ ⎟
⎝ L ⎠ ⎝ W ⎠ (x0, y0)
W
Recall that
k = ω μ 0ε 0 ε r x
L
ω = 2π f
Hence
⎛ mπ ⎞ ⎛ nπ ⎞
2 2
c
f = ⎜ ⎟ +⎜ ⎟ c = 1/ μ0ε 0
2π ε r ⎝ L ⎠ ⎝ W ⎠
Resonance Frequencies (cont.)
y
Hence f = f mn
(x0, y0)
W
(resonance frequency of
(m, n) mode)
x
L
⎛ mπ ⎞ ⎛ nπ ⎞
2 2
c
f mn = ⎜ ⎟ +⎜ ⎟
2π ε r ⎝ L ⎠ ⎝W ⎠
(1,0) Mode
y
current
This mode is usually used because the
radiation pattern has a broadside beam.
W
⎛πx ⎞
=
Ez cos ⎜ ⎟
⎝ L ⎠ x
L
c⎛1⎞
f10 = ⎜ ⎟
2 εr ⎝ L ⎠ This mode acts as a wide
microstrip line (width W)
that has a resonant length
⎛ −1 ⎞ ⎛ π ⎞ ⎛ π x ⎞ of 0.5 guided wavelengths
J s = xˆ ⎜ ⎟ ⎜ ⎟ sin ⎜ ⎟
⎝ jωμ 0 ⎠ ⎝ L ⎠ ⎝ L ⎠ in the x direction.
Basic Properties of Microstrip Antennas
Resonance Frequency
The resonance frequency is controlled by the patch
length L and the substrate permittivity.
Approximately,
Note: this is equivalent to saying that
c ⎛ 1 ⎞ the length L is one-half of a
f10 = ⎜ ⎟ wavelength in the dielectric:
εr ⎝ ⎠
2 L
λ0 / 2
kL = π L = λd / 2 =
εr
Note: a higher substrate permittivity allows for a smaller
antenna (miniaturization) – but lower bandwidth.
Resonance Frequency (cont.)
The calculation can be improved by adding a
“fringing length extension” ΔL to each edge of the
patch to get an “effective length” Le .
y
Le = L + 2ΔL
ΔL ΔL
c ⎛ 1 ⎞
f10 = ⎜ ⎟ L
2 ε r ⎝ Le ⎠ x
Le
Resonance Frequency (cont.)
Hammerstad formula:
⎡ eff ⎛W ⎞⎤
⎢ ( ε r + 0.3) ⎜ h + 0.264 ⎟ ⎥
ΔL / h = 0.412 ⎢ ⎝ ⎠⎥
⎢ ε eff − 0.258 ⎛ W + 0.8 ⎞ ⎥
⎢⎣ ( r ) ⎜⎝ h ⎟⎥
⎠⎦
−1/ 2
ε r +1 ⎛ ε r −1 ⎞ ⎡ ⎛ h ⎞⎤
ε eff
r = +⎜ ⎟ ⎢1 + 12 ⎜ ⎟⎥
2 ⎝ 2 ⎠⎣ ⎝W ⎠⎦
Resonance Frequency (cont.)
Note: ΔL ≈ 0.5 h
1
NORMALIZED FREQUENCY Hammerstad
Measured
0.95
0.9
0.85
0.8
0.75
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07
h / λ0
W = 1.5 L is typical.
Basic Properties of Microstrip Antennas
30
25
εr = 10.8
BANDWIDTH (%)
20
15
10
5 2.2
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / λ0
The discrete data points are measured values. The solid curves are
from a CAD formula.
εr = 2.2 or 10.8 W/ L = 1.5
Basic Properties of Microstrip Antennas
Resonant Input Resistance
• The resonant input resistance is almost independent
of the substrate thickness h.
• The resonant input resistance is proportional to εr.
• The resonant input resistance is directly controlled by
the location of the fed point. (maximum at edges x = 0
or x = L, zero at center of patch.
(x0, y0)
W
L L
Resonant Input Resistance (cont.)
(x0, y0)
W
x
L
Resonant Input Resistance (cont.)
For a given mode, it can be shown that the resonant input
resistance is proportional to the square of the cavity-mode
field at the feed point.
Rin ∝ Ez2 ( x0 , y0 )
y
(x0, y0)
For (1,0) mode:
W
⎛ π x0 ⎞
Rin ∝ cos ⎜2
⎟
⎝ L ⎠ x
L
Resonant Input Resistance (cont.)
Hence, for (1,0) mode:
y
⎛ π x0 ⎞
Rin = Redge cos ⎜
2
⎟
⎝ L ⎠ (x0, y0)
W
150 formula.
ε r = 10.8
100
2.2
50
y
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08
h / λ0 (x0, y0)
W
εr = 2.2 or 10.8
W/L = 1.5 x0 = L/4, y0 = W/2 x
L
Basic Properties of Microstrip Antennas
Radiation Efficiency
• Radiation efficiency is the ratio of power radiated
into space, to the total input power.
Pr
er =
Ptot
TM0
surface wave
x
cos (φ) pattern
Radiation Efficiency (cont.)
Hence,
Pr Pr
er = =
Ptot Pr + ( Pc + Pd + Psw )
100
2.2
80
EFFICIENCY (%)
60
10.8
40
exact
CAD
20
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / λ0
εr = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formulas
Results: accounting for all losses
100
2.2
80
EFFICIENCY (%)
exact
60
CAD
ε r = 10.8
40
20
0
0 0.02 0.04 0.06 0.08 0.1
h / λ0
εr = 2.2 or 10.8 W/L = 1.5 Note: CAD plot uses Pozar formulas
Basic Properties of Microstrip Antenna
Radiation Patterns
• The E-plane pattern is typically broader than the H-
plane pattern.
• The truncation of the ground plane will cause edge
diffraction, which tends to degrade the pattern by
introducing:
¾ rippling in the forward direction
¾ back-radiation
30 -30
-10
60 -20 -60
-30
120 240
150 210
180
Radiation Patterns (cont.)
H-plane pattern
45 -10 -45
-20
-30
135 225
180
Basic Properties of Microstrip Antennas
Directivity
• The directivity is fairly insensitive to the substrate
thickness.
• The directivity is higher for lower permittivity, because
the patch is larger.
Results: Directivity
10
ε r = 2.2
8
DIRECTIVITY (dB)
10.8
6
4
exact
CAD
2
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
h / λ0
L
Lp
Zin R C
Approximate CAD Model (cont.)
R
Z in ≈ jω Lp +
1 + j 2Q ( f / f 0 − 1)
R 1
Q= BW = BW is defined here by
ω0 L 2Q SWR < 2.0.
1
ω0 = 2π f 0 =
LC
L
Lp
R C
Approximate CAD Model (cont.)
R = Rin max
L
Lp
R C
Results : input resistance vs. frequency
80
70
60
CAD
50 exact
Rin ( Ω )
40
frequency where the
30 input resistance is
20
maximum
10
0
4 4.5 5 5.5 6
FREQUENCY (GHz)
60
CAD
exact
40
Xin ( Ω )
20
-40
4 4.5 5 5.5 6
FREQUENCY (GHz)
frequency where the
input impedance is real
η0 ⎡ ⎛ 2 ⎞⎤
Xf = ( k0 h ) ⎢− γ + ln ⎜⎜ ⎟⎥
⎟⎥
2π ⎢⎣ ⎝ ε r ( k 0 a ) ⎠⎦
X f = ω Lp
η0 = μ0 / ε 0 = 376.73 Ω
Approximate CAD Model (cont.)
η0 ⎡ ⎛ 2 ⎞⎤
Xf = ( k0 h) ⎢−γ + ln ⎜⎜ ⎟⎥
⎟⎥
2π ⎢⎣ ε ( k
⎝ r 0 ⎠⎦a )
Results: probe reactance (Xf =Xp= ωLp)
40
35 εr = 2.2
CAD
exact
30
W/L = 1.5
25
Xf ( Ω )
20 h = 0.0254 λ0
15
a = 0.5 mm
10
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Xr
where
⎡ 1⎞ ⎤
3
1 3 ⎛
= 2 ( k0 h ) ⎢60π c1 ⎜1 − ⎟ ⎥
3
Pswhed
λ0 ⎢⎣ ⎝ ε r ⎠ ⎥⎦
Hence we have
1
ehed
r = 3
3 ⎛ 1 ⎞⎛ 1⎞
1 + π ( k0 h ) ⎜ ⎟⎜1 − ⎟
4 ⎝ c1 ⎠⎝ ε r ⎠
1 2/5
c1 = 1 − +
εr ε r2
a2 ⎛ 3 ⎞ ⎛1⎞
p = 1 + ( k 0 W ) + ( a2 + 2 a 4 ) ⎜ ⎟ ( k0 W ) + c2 ⎜ ⎟ ( k0 L )
2 2 4 2
10 ⎝ 560 ⎠ ⎝5⎠
⎛ 1 ⎞
+ a2 c2 ⎜ ⎟ ( k0 W ) ( k0 L )
2 2
⎝ 70 ⎠
c2 = − 0.0914153
a2 = − 0.16605
a4 = 0.00761
CAD Formula: Radiation Efficiency (cont.)
Improved formula (due to Pozar)
1
e hed
=
2 ( 0 ) (
c1 )
r 1
Pswhed π
2
P hed
= k h 80 2
1 + hed sp
λ0
Psp
ε r ( x − 1)
3/ 2
ηk 2 2
=
hed 0
P 0 0
4 ε r (1 + x1 ) + (k0 h) x02 − 1 (1 + ε r2 x1 )
sw
α 0 = s tan ⎡⎣( k0 h ) s ⎤⎦
1⎡
α1 = − ⎢ tan ⎣⎡( k0 h ) s ⎤⎦ +
( k0 h ) s ⎤
⎥
s ⎢⎣ cos ⎡⎣( k0 h ) s ⎤⎦ ⎥⎦
2
s = ε r −1
CAD Formula: Bandwidth
1 ⎡ ⎛ Rs ⎞ ⎛ 1 ⎞ ⎛ 16 ⎞ ⎛ p c1 ⎞ ⎛ h ⎞ ⎛ W ⎞⎛ 1 ⎞⎤
BW = ⎢ d +⎜ + ⎟⎥
⎜ π η 0 ⎟⎟ ⎜ h / λ 0 ⎟ ⎜⎝ 3 ⎟⎠ ⎜⎝ ε r ⎟⎠ ⎜ λ 0 ⎟ ⎜⎝ L ⎟ ⎜ hed
⎠ ⎝ er
2 ⎣⎢ ⎝ ⎠⎝ ⎠ ⎝ ⎠ ⎠ ⎥⎦
f 2 − f1
BW = (multiply by 100 if you want to get %)
f0
CAD Formula: Resonant Input Resistance
(probe-feed)
⎛ π x0 ⎞
R = Redge cos ⎜
2
⎟
⎝ L ⎠
⎛4⎞ ⎛ L ⎞⎛ h ⎞
⎜ ⎟ (η0 ) ⎜ ⎟ ⎜ ⎟
π
⎝ ⎠ W λ
⎝ ⎠⎝ 0 ⎠
Redge =
⎛ Rs ⎞⎛ 1 ⎞ ⎛ 16 ⎞ ⎛ p c1 ⎞ ⎛ W ⎞⎛ h ⎞⎛ 1 ⎞
d +⎜ ⎟⎜ ⎟ +⎜ ⎟⎜ ⎟⎜ ⎟⎜ ⎟ ⎜ hed ⎟
π η
⎝ 0 ⎠⎝ h / λ 0 ⎠ ⎝ 3 ε
⎠⎝ r ⎠⎝ L λ
⎠ ⎝ 0 ⎠ ⎝ er ⎠
CAD Formula: Directivity
⎛ 3 ⎞⎡ εr ⎤
D=⎜ ⎥( ( k1h ) )
2
⎟⎢ tanc
⎝ pc1 ⎠ ⎣ ε r + tan ( k1h ) ⎦
2
where
tanc ( x ) ≡ tan ( x ) / x
CAD Formula: Directivity (cont.)
3
D≈
p c1
⎛ πx ⎞⎟ W E-plane
J s = ˆx cos ⎜⎜ ⎟⎟ x
⎜⎝ L ⎠
The probe is on the x axis.
L
CAD Formula: Radiation Patterns (cont.)
The far-field pattern can be determined by reciprocity.
⎡ ⎛ ky W ⎞⎤ ⎡ ⎛ kx L ⎞ ⎤
⎢ sin ⎜ ⎟ ⎥ ⎢ cos ⎜ ⎟ ⎥
⎛ π WL ⎞ ⎢ ⎝ 2 ⎠⎥ ⎢ ⎝ 2 ⎠ ⎥
Ei (r ,θ , φ ) = Ei ( r ,θ , φ ) ⎜
hex
⎟
⎝ 2 ⎠ ⎢ ky W ⎥ ⎢ ⎛ π ⎞2 ⎛ k L ⎞2 ⎥
⎢ ⎥ ⎢⎜ ⎟ −⎜ x ⎟ ⎥
i = θ or φ ⎣ 2 ⎦ ⎣⎝ 2 ⎠ ⎝ 2 ⎠ ⎦
k x = k0 sin θ cos φ
k y = k0 sin θ sin φ
⎛ − jω μ0 ⎞ − jk0 r
where E0 = ⎜ ⎟e
⎝ 4π r ⎠
2 tan ( k0 h N (θ ) )
F (θ ) = 1 + Γ TE
(θ ) =
tan ( k0 h N (θ ) ) − j N (θ ) sec θ
2 tan ( k0 h N (θ ) ) cos θ
G (θ ) = cos θ (1 + Γ TM
(θ ) ) = εr
tan ( k0 h N (θ ) ) − j cos θ
N (θ )
N (θ ) = ε r − sin 2 (θ )
Circular Polarization
y y
L L
L x L x
y
Phase shift realized with delay line L
P
L
P+λg/4 LHCP
Circular Polarization: Dual Feed
Phase shift realized with 90o hybrid (branchline coupler)
Z0 / 2 Z0
L
Z0
feed
λg/4 Z0
50 Ohm load L
λg/4
x LHCP
Circular Polarization: Synchronous Rotation
Elements are rotated in space and fed with phase shifts
-180o
-90o
-270o
0o
a
x
h
Circular Patch: Resonance Frequency
∂Ez
=0 J m′ ( ka ) = 0
∂ρ ρ =a
Circular Patch: Resonance Frequency (cont.)
′
ka = xmn
a PMC
(nth root of Jm′ Bessel function)
c
f mn = ′
xmn
2π ε r
c
f11 = x11′ x11′ ≈ 1.842
2π a ε r
Circular Patch: Resonance Frequency (cont.)
“Long/Shen Formula” :
2h ⎡ ⎛πa ⎞ ⎤ h ⎡ ⎛πa ⎞ ⎤
ae = a 1 + ⎢ ⎜ 2h ⎟ + Δa = +
πε r ⎢⎣ ⎜⎝ 2h ⎟⎠
ln 1.7726 ⎥ or ln 1.7726 ⎥
π aε r ⎣ ⎝ ⎠ ⎦ ⎦
Circular Patch: Patterns
(based on magnetic current model)
2a x
h εr k = k 0 εr
infinite GP and substrate
H-plane
In patch cavity:
⎛ J1 (kρ ) ⎞⎟⎛ 1 ⎞
E z ( ρ,φ) = cosφ ⎜⎜⎜ ⎟⎟⎜⎜ ⎟⎟
⎜⎝ J1 (ka )⎠⎟⎜⎝ h ⎠⎟
(The edge voltage has a maximum of one volt.)
Circular Patch: Patterns (cont.)
E0
EθR (r,θ ,φ) = 2πa tanc (k z1h) cosφ J '1 ( k0 a sinθ ) Q (θ )
η0
E0 ⎛ J1 (k0 a sinθ )⎞⎟
E ( r,θ,φ) = −2πa
R
tanc (k z1h) sinφ ⎜⎜⎜ ⎟⎟ P (θ )
φ
η0 ⎜⎝ k0 a sinθ ⎠⎟
where
tanc ( x ) = tan ( x ) / x
⎡ − 2 jN (θ ) ⎤
P (θ ) = cosθ (1− Γ (θ )) = cosθ ⎢⎢
TE ⎥
⎥
⎢⎣ tan ( k 0 hN ( θ )) − jN (θ ) secθ ⎥⎦
⎛ ε ⎞⎟
−2 j ⎜⎜⎜ r ⎟⎟ cosθ
⎜⎝ N (θ )⎠⎟
Q (θ ) = 1− Γ (θ ) =
TM
ε
tan (k0 h N (θ ))− j r cosθ
N (θ )
N (θ ) = ε r − sin 2 (θ )
Circular Patch: Input Resistance
ρ0
⎡ J12 ( k ρ0 ) ⎤
Rin ≈ Redge ⎢ 2 ⎥
⎢⎣ J1 ( ka ) ⎥⎦
Circular Patch: Input Resistance (cont.)
⎡ 1 ⎤
Redge =⎢ ⎥ er
⎢⎣ 2 Psp ⎥⎦
er = radiation efficiency
where
π /2
π
( k0 a ) ∫ tanc2 ( k0 hN (θ ) )
2
Psp =
8η0 0
⎡
⋅ ⎢ Q (θ ) J1′ ( k0 a sin θ ) + P (θ ) J inc
2 2 2 2
( k0 a sin θ ) ⎥⎤ sin θ dθ
⎣ ⎦
J inc ( x ) = J1 ( x ) / x
CAD Formula:
π
Psp = ( k0 a ) 2 I c
8η0
6 e0 = 1
pc = ∑ ( k0 a ) e2 k
4 2k
I c = pc e2 = −0.400000
3 k =0
e4 = 0.0785710
e6 = −7.27509 × 10−3
e8 = 3.81786 × 10−4
e10 = −1.09839 × 10−5
e12 = 1.47731 × 10−7
Feeding Methods
Advantages:
¾ simple
¾ easy to obtain input match
⎛ π x0 ⎞
R = Redge cos ⎜
2
⎟
⎝ L ⎠
Disadvantages:
¾ difficult to obtain input match for thicker substrates,
due to probe inductance.
¾ significant probe radiation for thicker substrates
Feeding Methods: Inset-Feed
Advantages:
¾ simple
¾ allows for planar feeding
¾ easy to obtain input match
Disadvantages:
¾ significant line radiation for thicker substrates
¾ for deep notches, pattern may shown distortion.
Feeding Methods: Proximity (EMC) Coupling
Advantages:
¾ allows for planar feeding
¾ less line radiation compared
to microstrip feed patch
microstrip line
Disadvantages:
¾ requires multilayer fabrication
¾ alignment is important for input match
Feeding Methods: Aperture Coupled Patch (ACP)
Advantages:
¾ allows for planar feeding
¾ feed radiation is isolated from patch radiation
¾ higher bandwidth, since probe inductance
problem restriction is eliminated and a
double-resonance can be created.
¾ allows for use of different substrates to
optimize antenna and feed-circuit
performance patch
Disadvantages: slot
¾ requires multilayer fabrication
microstrip line
¾ alignment is important for input match
Improving Bandwidth
L-shaped probe:
foam
microstrip
substrate
microstrip line slot
Improving Bandwidth: Stacked Patches
• Bandwidth increase is due to thick low-permittivity antenna
substrates and a dual or triple-tuned resonance.
• Bandwidths of 25% have been achieved using a probe feed.
• Bandwidths of 100% have been achieved using an ACP feed.
microstrip line
slot
Improving Bandwidth: Stacked Patches (cont.)
-5
-10
-30
-35
-40
3 4 5 6 7 8 9 10 11 12
Frequency (GHz)
stacked patch with ACP feed
“Single Layer Single Patch Wideband Microstrip Antenna,” T. Huynh and K. F. Lee,
Electronics Letters, Vol. 31, No. 16, pp. 1310-1312, 1986.
Improving Bandwidth: Double U-Slot
General Principle:
low-band
low-band
high-band
• High Permittivity
• Quarter-Wave Patch
• PIFA
• Capacitive Loading
• Slots
• Meandering
εr = 1
εr = 4
W E-plane W´=W/2
L´=L/2
L
short-circuit
Ez = 0 vias
W E-plane W E-plane
L L´=L/2
side view
side view
The capacitive loading allows for the length of the PIFA to be reduced.
Miniaturization: Slotted Patch
top view
0o ±90o
linear CP
The slot forces the current to flow through a longer path, increasing
the effective dimensions of the patch.
Miniaturization: Meandering
via
via
feed feed
30 -30 30 -30
-10 -10
-30 -30
180 180
conventional
conventional RSW
RSW
RSW: Mutual Coupling
space-wave radiation
lateral radiation
surface waves
RSW: Mutual Coupling (cont.)
Reducing surface-wave excitation and lateral radiation reduces mutual coupling.
0
RSW - Measured
-10
RSW - Theory
-20 Conv - Measured
-30 Conv - Theory
-40
S12 [dB]
-50
-60
-70
-80
-90
-100
0 1 2 3 4 5 6 7 8 9 10
Separation [Wavelengths]