Small Signal - Transistors, Fets and Diodes Device Databook

Selector Guide Plastic-Encapsulated Transistors GreenLine Portfolio Devices Small-Signal Field-Effect Transistors and MOSFETs Small-Signal Tuning and
Switching Diodes Tape and Reel Specifications and Packaging Specifications Surface Mount Information Package Outline Dimensions Reliability and Quality Assurance Replacement Devices Alphanumeric Index
1 2 3 4 5 6 7 8 9 10 11
Motorola Small-Signal Transistors, FETs and Diodes Device Data
TMOS is a registered trademark of Motorola Inc. HDTMOS and GreenLine are trademarks of Motorola Inc. Thermal Clad is a trademark of the Bergquist Company.
SMALLSIGNAL TRANSISTORS, FETs AND DIODES

This publication presents technical information for the several product families that comprise the Motorola smallsignal semiconductor line. The families include bipolar transistors, fieldeffect transistors, and diodes. These are available in a variety of through hole and surface mount packages. Complete device specifications and typical performance curves are given on individual data sheets, which are grouped by the various families. A quick comparison of performance characteristics is presented in the easytouse selector guide in the first section. The tables will assist in the selection of the proper device for a specific application. Seperate sections are included to describe package outline drawings and footprints and product reliability and quality considerations. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor devices any license under the patent rights to the manufacturer. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola, Inc. 1997 Previous Edition 1994 Printed in U.S.A. All Rights Reserved
Motorola SmallSignal Transistors, FETs and Diodes Device Data
About This Revision

To accomodate the increasing requirements for surface mount components, this publication adds a variety of device types in several choices of surface mount packages. An expanded MOSFET portfolio to include new lower RDS(on) HDTMOS devices in the TSOP6 package. Dual transistors and diodes in the SC70 multilead package. A Family of transistors and diodes in the smaller SC90 package. It should be noted that Metal Can Transistors previously listed in this data book have been removed for this revision. Replacement devices for these parts can be found in Chapter 10.
ii
Motorola Device Classifications

In an effort to provide current information to the customer regarding the status of any given device, Motorola has classified all devices into three categories: Preferred devices, Current product and Not Recommended for New Design products. A Preferred device is a device which is recommended as a first choice for future use. These devices are preferred by virtue of their performance, price functionality, or combination of attributes which offer the overall best value to the customer. This category contains both advanced and mature devices which will remain available for the foreseeable future (generally 3 to 5 years). Device types identified as current are not a first choice product for new designs, but will continue to be available because of the popularity and/or standardization or volume usage in current production designs. These products can be acceptable for new designs but the preferred types are considered better alternatives for long term usage.
Any device that has not been identified as a preferred device is a current device.
Products designated as Not Recommended for New Design may become obsolete as dictated by poor market acceptance, or a technology or package that is reaching the end of its life cycle. Devices in this category have an uncertain future and do not represent a good selection for new device designs or long term usage.
All Not Recommended for New Design devices have been removed from the data book. In the event the device you need is no longer found within an appropriate section of the data book, refer to the Replacement Devices index at the back of the book to see if there is a Replacement Part for the device in question.
iii
Table of Contents
Selector Guide . . . . . . . . . . . . . . . . . . . . . 11
Bipolar Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 PlasticEncapsulated Transistors . . . . . . . . . . . . . . . . 12 PlasticEncapsulated Multiple Transistors . . . . . . . . . 18 PlasticEncapsulated Surface Mount Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 FieldEffect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 118 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 TMOS FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . 123 Tuning Diodes Abrupt Junction . . . . . . . . . . . . . . . 123 Tuning Diodes HyperAbrupt Junction . . . . . . . . 126 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 135 GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 Small Signal MultiIntegrated Devices . . . . . . . . . . . 138
SmallSignal Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . 51

Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 52 52 53
Tape and Reel Specifications and Packaging Specifications . . . . . . . . . . . . 61

Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . 62 Packaging Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Surface Mount Information . . . . . . . . . 71

Information for Using Surface Mount Packages . . . . . . . 72 Footprints for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Package Outline Dimensions . . . . . . . 81

Package Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . 82
PlasticEncapsulated Transistors . . . 21
Reliability and Quality Assurance . . . 91

Outgoing Quality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reliability Data Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Air Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Activation Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reliability Stress Tests . . . . . . . . . . . . . . . . . . . . . . . . . . . . Statistical Process Control . . . . . . . . . . . . . . . . . . . . . . . . . 92 92 94 94 94 95 97
GreenLine Portfolio . . . . . . . . . . . . . . . 31
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SmallSignal FieldEffect Transistors and MOSFETs . . . . . . . . . . . . 41

Replacement Devices . . . . . . . . . . . . . 101 Alphanumeric Index . . . . . . . . . . . . . . . 111
iv
Section 1
Selector Guide
In Brief . . .
This selector guide highlights semiconductors that are the most popular and have a history of high usage for the most applications. A large selection of encapsulated plastic transistors, FETs and diodes are available for surface mount and insertion assembly technology. Plastic packages include TO-92 (TO226AA), 1-Watt TO-92 (TO226AE), SOT-23, SC-70/SOT-323, SC90/SOT416, SC-59, SOD-123, SOT223, SOT363, and TSOP6. Plastic multiples are available in 14pin and 16pin dualinline packages for insertion applications: SO14 and SO16 for surface mount applications.
Selector Guide 11
Bipolar Transistors
CASE 2905 TO226AE 1WATT (TO92)
PlasticEncapsulated Transistors
Motorolas Small Signal TO226 plastic transistors encompass hundreds of devices with a wide variety of characteristics for generalpurpose, amplifier and switching applications. The popular highvolume package combines proven reliability, performance, economy and convenience to provide the perfect solution for industrial and consumer design problems. All devices are laser marked for ease of identification and shipped in antistatic containers, as part of Motorolas ongoing practice of maintaining the highest standards of quality and reliability.
23
23
CASE 2904 TO226AA (TO92)
Table 1. PlasticEncapsulated GeneralPurpose Transistors These generalpurpose transistors are designed for smallsignal amplification from dc to low ratio frequencies. They are also useful as oscillators and generalpurpose switches. Complementary devices shown where available (Tables 14).
V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA NF dB Max
NPN
PNP
Style
Case 2904 TO226AA (TO92)

MPS8099 MPSA06 2N4410 BC546 BC546B MPSA05 BC182 BC237B BC337 BC547 BC547A BC547B BC547C MPSA20 MPS2222A 2N4401 2N4400 MPS6602 2N3903 2N3904 BC548 BC548A BC548B BC548C 2N4123 2N4124 BC338
(1) Typical
MPS8599 MPSA56 BC556 BC556B MPSA55 MPS2907A BC212 BC307B BC327 BC557 BC557A BC557B BC557C MPSA70 2N4403 2N4402 MPS6652 2N3905 2N3906 BC558B 2N4125 BC328
80 80 80 65 65 60 60 50 45 45 45 45 45 45 40 40 40 40 40 40 40 30 30 30 30 30 25 25
150 100 60 150 150 100 200 200(1) 150 210(1) 150 150 150 150 125 300 200 150 100 200 250 300(1) 300(1) 300(1) 300 200 250 210(1)
10 10 10 10 10 10 50 10 10 10 10 10 10 10 5.0 20 20 20 50 10 10 10 10 10 10 10 10 10
500 500 250 100 100 500 600 100 100 800 100 100 100 100 100 600 600 600 1000 200 200 100 100 100 100 200 200 800
100 100 60 120 180 100 100 120 200 100 120 120 180 380 40 100 100 50 50 50 100 110 120 200 420 50 120 100
300 400 450 450 300 500 460 630 800 220 450 800 400 300 300 150 150 300 800 220 450 800 150 360 630
1.0 100 10 2.0 2.0 100 150 2.0 2.0 100 2.0 2.0 2.0 2.0 5.0 150 150 150 500 10 10 2.0 2.0 2.0 2.0 2.0 2.0 100
10 10 10 10 10 10 10 10 6.0 5.0 10 10 10 10 6.0 4.0
1 1 1 17 17 1 1 14 17 17 17 17 17 17 1 1 1 1 1 1 1 17 17 17 17 1 1 17
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide 12
PlasticEncapsulated Transistors (continued)

Table 1. PlasticEncapsulated GeneralPurpose Transistors (continued)
V(BR)CEO Volts Min fT @ IC MHz Min mA IC A Max hFE @ IC Min Max mA VCE(sat) @ IC @ IB Volts Max mA mA Style
NPN
PNP
Case 2905 TO226AE (1WATT TO92)

BDC01D BDB01C MPS6717 MPSW06 BDB02C MPSW56 100 80 80 80 50 50 50 50 200 200 200 200 0.5 0.5 0.5 0.5 40 40 80 80 400 400 100 100 50 50 0.7 0.7 0.5 0.4 1000 1000 250 250 100 100 10 10 14 1 1 1
Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity These devices are designed to use on applications where good hFE linearity and lownoise characteristics are required: Instrumentation, hifi preamplifier.
hFE @ IC V(BR)CEO Volts Min Max mA VT(4) mV Typ NF(5) dB Max fT MHz Typ
NPN
PNP
Style

MPS6428 BC239 BC550B BC550C MPSA18 MPS3904 BC549B BC549C 2N5088 2N5089(6)
MPS6521
(1) (2) (4) (5) (7) (8)
2N5087 BC560C MPS3906 MPS4250 BC559B BC559C MPS6523
50 50 45 45 45 45 40 40 30 30 30 25 25
250 250 120 180 380 500 100 250 200 380 350 450 300
800 650 800 450 800 300 450 800 600
0.1 0.1 2.0 2.0 2.0 1.0 10 10 2.0 2.0 1.0 1.0 2.0
7.0(7) 9.5 6.5(1)
2.0 3.5(8) 2.0(1) 2.5 2.5 5.0 2.0 2.5 2.5 3.0 2.0 3.0
40(2) 100(2) 280 250 250 160 200(2) 250 250 50 50
1 1 17 17 17 1 1 1 17 17 1 1 1
Typical Min VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 k , IC = 200 A, VCE = 5.0 Volts. NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz. RS = 10 k , BW = 1.0 Hz, f = 100 MHz RS = 500 , BW = 1.0 Hz, f = 10 MHz
Selector Guide 13

Table 3. PlasticEncapsulated Darlington Transistors Darlington amplifiers are cascade transistors used in applications requiring very highgain and input impedance. These devices have monolithic construction.
hFE @ IC NPN PNP V(BR)CEO Volts IC Max Min Max mA VCE(sat) @ IC & IB Volts Max mA mA f T @ IC Min mA Style

MPSW45A MPSW64
50 30 1000 1000 25K 20K 150K 200 100 1.5 1.5 1000 100 2.0 0.1 100 125 200 10 1 1

MPSA29 BC373 MPSA27 BC618 2N6427 2N6426 MPSA14 MPSA13 BC517
MPSA77 MPSA75 MPSA64 MPSA63 100 80 60 55 40 40 40 30 30 30 500 1000 500 1000 500 500 500 500 500 1000 10K 10K 10K 10K 10K 20K 30K 20K 10K 30K 160K 50K 200K 300K 100 100 100 200 100 100 100 100 100 20 1.5 1.1 1.5 1.1 1.5 1.5 1.5 1.5 1.5 1.0 100 250 100 200 100 500 500 100 100 100 0.1 0.25 0.1 0.2 0.1 0.5 0.5 0.1 0.1 0.1 125 100 150 125 125 125 200(1) 10 100 500 10 10 10 10 1 1 1 17 1 1 1 1 1 17
Table 4. PlasticEncapsulated HighCurrent Transistors The following table is a listing of devices that are capable of handling a higher current range for smallsignal transistors.
V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA VCE(sat) @ IC & IB Volts Max mA mA Style
NPN
PNP

MPS6715 MPSW01A MPS6727 MPSW51A 40 40 50 50 1000 1000 50 50 1000 1000 0.5 0.5/0.7 1000 1000 100 100 1 1

BC489 BC639 MPS651 MPS650 BC368
(1) Typical
BC490 BC640 MPS751 MPS750 BC369
80 80 60 40 20
200/150(1) 60 75 75 65
50 10 50 50 10
1000 500 2000 2000 1000
60 40 75 75 60
400 160
100 150 1000 1000 1000
0.3/0.5 0.5 0.5 0.5 0.5
1000 500 2000 2000 1000
100 50 200 200 100
17 14 1 1 1
Selector Guide 14

Table 5. PlasticEncapsulated HighVoltage Amplifier Transistors These highvoltage transistors are designed for driving neon bulbs and indicator tubes, for direct line operation, and for other applications requiring highvoltage capability at relatively low collector current. These devices are listed in order of decreasing breakdown voltage (V(BR)CEO).
Device Type V(BR)CEO Volts Min IC Amp Max hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA MHz Min f T @ IC mA Style
Case 2905 TO226AE (1WATT TO92) NPN

MPSW42
300 0.5 40 30 0.5 20 2.0 50 10 1
Case 2905 TO226AE (1WATT TO92) PNP

MPSW92
300 0.5 25 30 0.5 20 2.0 50 10 1
Case 2904 TO226AA (TO92) NPN

BF844 MPSA44 2N6517 BF393 MPSA42 2N5551 400 400 350 300 300 160 0.3 0.3 0.5 0.5 0.5 0.6 50 40 30 40 40 80 10 100 30 10 10 10 0.5 0.75 0.3 0.2 0.5 0.15 10 50 10 20 20 10 1.0 5.0 1.0 2.0 2.0 1.0 40 50 50 100 10 10 10 10 1 1 1 1 1 1
Case 2904 TO226AA (TO92) PNP

BF493S 2N6520 MPSA92 2N6519 2N5401 350 350 300 300 150 0.5 0.5 0.5 0.5 0.6 40 30 40 45 60 10 30 10 30 10 20 0.3 0.5 0.3 0.2 20 10 20 10 10 2.0 1.0 2.0 1.0 1.0 50 40 50 40 100 10 10 10 10 10 1 1 1 1 1

V(BR)CEO Volts Min 300 250 IC Amp Cont 0.5 0.5 hFE @ IC Min 50 50 mA 25 25 VCE(sat) @ IC & IB Volts Max 2.0 2.0 mA 20 20 mA 2.0 2.0 f T @ IC MHz Min 60 60 mA 10 10 Style 14 14
NPN BF420 BF422
PNP BF421 BF423
Selector Guide 15

Table 6. PlasticEncapsulated RF Transistors The RF transistors are designed for smallsignal amplification from RF to VHF/UHF frequencies. They are also used as mixers and oscillators in the same frequency ranges.
V(BR)CEO Volts Min IC mA Max hFE @ IC Min mA VCE V fT MHz Typ CRE/CRB pF Max NF dB Typ
Device Type
f MHz
Style

BF224 MPSH11 MPSH10 BF199 BF959 MPSH17 MPS918 MPS5179 MPS3563 30 25 25 25 20 15 15 12 12 50 100 100 50 50 50 30 60 60 40 40 25 20 25 20 7.0 4.0 4.0 7.0 20 5.0 8.0 3.0 8.0 10 10 10 10 10 10 10 1.0 10 600 650(2) 650(2) 750 600(2) 800(2) 600(2) 2000(3) 800 0.28 0.9 0.65 0.35 0.65 0.9 1.7 1.7 2.5 2.5 3.0 6.0(3) 6.0(3) 5.0(3) 6.0(3) 100 35 200 200 60 200 60 21 2 2 21 21 2 1 1 1

MPSH81
20 50 60 5.0 10 600(2) 0.85 2
Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistors

ton & toff @ IC Device Type ns Max ns Max mA V(BR)CEO Volts Min hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA fT @ IC MHz Min mA Style

2N4264 MPS3646 MPS2369A
(2) Min (3) Max (9) AGC Capable
25 18 12
35 28 18
10 300 10
15 15 15
40 30 40
10 30 10
0.22 0.2 0.2
10 30 10
1.0 3.0 1.0
300 350
10 30
1 1 1
Selector Guide 16

Table 8. PlasticEncapsulated Choppers Devices are listed in decreasing V(BR)EBO.
Device Type V(BR)EBO Volts Min IC Amp(1) Max hFE @ IC Min mA VCE(sat) @ IC & IB Volts Max mA mA f T @ IC MHz Min mA Style

MPSA17
15 100 200 5.0 0.25 10 1.0 80 5.0 1

MPS404A
25 150 30 12 0.2 24 1.0 1
Table 9. PlasticEncapsulated Telecom Transistors These devices are special product ranges intended for use in telecom applications.
PD mW 25C Amb IC mA Cont hFE @ IC @ VCE Min Max mA Volts fT MHz Min Style
Device Type
V(BR)CEO Volts

P2N2222A 40 625 600 75 10 10 300 17

P2N2907A
(1) Typical
60
625
600
100
10
10
200
17
Selector Guide 17
PlasticEncapsulated Multiple Transistors

The manufacturing trend has been toward printed circuit board design with requirements for smaller packages with more functions. In the case of discrete components the use of the multiple device package helps to reduce board space requirements and assembly costs. Many of the most popular devices are offered in the standard plastic DIP and surface mount IC packages. This includes smallsignal NPN and PNP bipolar transistors, Nchannel and Pchannel FETs, as well as diode arrays.
14 1 CASE 64606 (TO116) STYLE 1
16 1 CASE 751B05 SO16 STYLE 4
Specification Tables The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification. This applies to Table 10 and 11 of this section only.
KEY
Ref. Point Subscript Unit
hFE1 hFE2 VCE Volts IC Amp Max hFE @ IC Min

Commonemitter DC Current Gain. Units for test Current: A ampere m mA u A
TYPE NO.
Alphanumeric listing type numbers Identification Code
ID
PD Watts One Die Only
VBE mV Max
Gp dB Min
NF @ dB Max
fT MHz Min
Cob pF Max
ton ns Max
toff ns Max
VCE @ (sat) Volts Max
IC IB
& IC Unit
First Letter: Polarity C both types in multiple device N NPN P PNP Second Letter: Use A General Purpose Amplifier E Low Noise Audio Amplifier F Low Noise RF Amplifier G General Purpose Amplifier and Switch H Tuned RF/IF Amplifier M Differential Amplifier S High Speed Switch D Darlington
Gp Power Gain NF Noise Figure f Test Frequency AUD 1015 kHz Frequency Units: H Hertz M MHz K kHz G GHz VCE(sat) CollectorEmitter Saturation Voltage IC Test Current Current Units: u A m mA A Amp hFE1/hFE2 Current Gain Ratio VBE Differential Base Voltage |VBE1 VBE2|. Differential Amplifiers ton turnon time toff turnoff time
CurrentGainBandwidth Product
Continuous (DC) Collector Current
Power Dissipation specified at 25C. Single die rating. Ref. Point: A Ambient Temperature C Case Temperature
Rated Minimum CollectorEmitter Voltage Subscript letter identifies base termination listed below in order of preference. SUBSCRIPT: 0 VCEO, open
Output Capacitance, commonbase. Shown without distinction: Ccb CollectorBase Capacitance Cre CommonEmitter Reverse Transfer Capacitance
Selector Guide 18
PlasticEncapsulated Multiple Transistors (continued)

Table 10. PlasticEncapsulated Multiple Transistors Quad The following table is a listing of the most popular multiple devices available in the plastic DIP package. These devices are available in NPN, PNP, and NPN/PNP configurations. (See note.)
hFE1 PD Watts One Die Only hFE2 VCEO Volts IC Amp Max hFE @ IC Min fT MHz Min Cob pF Max VBE mV Max toff ns Max Gp dB Min VCE (sat) Volts Max NF @ dB Max Typ(1) f
Device
ID
ton ns Max
IC IB IC
Case 64606 TO116

MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907A MPQ3467 MPQ3725 MPQ3762 MPQ3798 MPQ3799 MPQ3904 MPQ3906 MPQ6001 MPQ6002 MPQ6100A MPQ6426 MPQ6502 MPQ6600A1 MPQ6700 MPQ6842 MPQ7043 MPQ7042 MPQ7051 MPQ7093
NA NS NA NA PA PS NS PS PA PA NG PG CG CG CA ND CG CA CA CA NA NA CG PA 0.65 0.5 0.625 0.625 0.65 0.75 1.0 0.75 0.625 0.625 0.5 0.5 0.65 0.65 0.5 0.5 0.65 0.5 0.5 0.75 0.75 0.75 0.75 0.75 40 15 40 40 60 40 40 40 40 60 40 40 30 30 45 30 30 45 40 40 250 200 150 250 0.5 0.5 0.05 0.05 0.6 1.0 1.0 1.5 0.05 0.05 0.2 0.2 0.5 0.5 0.05 0.5 0.5 0.05 0.2 0.5 0.5 0.5 0.5 0.5 100 40 150 300 100 20 25 35 150 300 75 75 40 100 150 10K 100 150 70 70 25 25 25 25 150 m 10 m 1.0 m 1.0 m 150 m 500 m 500 m 150 m 0.1 m 0.1 m 10 m 10 m 150 m 150 m 1.0 m 100 m 150 m 1.0 m 10 m 10 m 1.0 m 1.0 m 1.0 m 1.0 m 200 450 50 50 200 125 250 150 60 60 250 200 200 200 50 125 200 50 200 300 50 50 50 50 8.0 4.0 35(1) 9.0(1) 285(1) 15(1) 0.3 0.25 10 10 3.0(1) 2.0(1) 10 10 10 10 3.0(1) 2.0(1) 10 10 10 10 4.0(1) 10 10 10 10 10 10 10 10 10 150 m 10 m AUD AUD 150 m 500 m 500 m 500 m AUD AUD 10 m 10 m 150 m 150 m AUD 100 m 150 m 1.0 m 1.0 m 0.5 m 20 m 20 m 20 m 20 m
8.0 25 10 15 4.0 4.0 4.0 4.5 8.0 8.0 4.0 8.0 8.0 4.0 4.5 4.5 5.0 5.0 6.0 5.0
45(1) 40 35 50
180(1) 90 60 120
0.4 0.5 0.45 0.55
37(1) 43(1) 30(1) 30(1) 30(1) 0.8 45
136(1) 155(1) 225(1) 225(1) 225(1) 20 150
0.2 0.25 0.4 0.4 1.5 0.4 0.25 0.25 0.15 0.5 0.5 0.7 0.5
Table 11. PlasticEncapsulated Multiple Transistors Quad Surface Mount The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package. These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC Device V(BR)CEO V(BR)CBO Min mA MHz Min fT @ IC mA
Case 751B05 SO16

MMPQ2222A MMPQ2369 MMPQ2907A MMPQ3467 MMPQ3725 MMPQ3904 MMPQ3906 MMPQ6700 (12)
40 15 50 40 40 40 40 40 75 40 60 40 60 60 40 40 40 20 50 20 25 75 75 70 500 100 500 500 500 10 10 10 200 450 200 125 250 250 200 200 20 10 50 50 50 10 10 10
(1) Typical (12) NPN/PNP NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Selector Guide 19
PlasticEncapsulated Surface Mount Transistors

1
3 1 1 2 CASE 318D04 SC59 2 3
This section of the selector guide lists the smallsignal plastic devices that are available for surface mount applications. These devices are encapsulated with the latest stateoftheart mold compounds that enhance reliability and exhibit excellent performance in high temperature and high humidity environments. This package offers higher power dissipation capability for smallsignal applications.
CASE 31808 TO236AB SOT23
CASE 318E04 SOT223
3 1 2 CASE 41902 SC70/SOT323 1
3 4 1 2
3 CASE 419B01 SOT363
CASE 46301 SOT416/SC90
Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors The following tables are a listing of smallsignal generalpurpose transistors in the SOT23, SC59, SOT223, SC70, SC90, and SOT363 surface mount packages. These devices are intended for smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and generalpurpose, low voltage switches. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min
Case 31808 TO236AB (SOT23) NPN

BC846ALT1 BC846BLT1 BC81716LT1 BC81725LT1 BC81740LT1 BC847ALT1 BC847BLT1 BC847CLT1 MMBT2222ALT1 MMBT3904LT1 MMBT4401LT1 BC848ALT1 BC848BLT1 BC848CLT1
1A 1B 6A 6B 6C 1E 1F 1G 1P 1AM 2X 1J 1K 1L 65 65 45 45 45 45 45 45 40 40 40 30 30 30 110 200 100 160 250 110 200 420 100 100 100 110 200 420 220 450 250 400 600 220 450 800 300 300 300 220 450 800 2.0 2.0 100 100 100 2.0 2.0 2.0 150 10 150 2.0 2.0 2.0 100 100 200 200 200 100 100 100 200 300 250 100 100 100
Case 31808 TO236AB (SOT23) PNP

BC856ALT1 BC856BLT1 MMBT2907ALT1 BC80716LT1 BC80725LT1 BC80740LT1 BC857ALT1 BC857BLT1 MMBT3906LT1 MMBT4403LT1 BC858ALT1 BC858BLT1 BC858CLT1
3A 3B 2F 5A 5B 5C 3E 3F 2A 2T 3J 3K 3L 65 65 60 45 45 45 45 45 40 40 30 30 30 125 220 100 100 160 250 125 220 100 100 125 220 420 250 475 300 250 400 600 250 475 300 300 250 475 800 2.0 2.0 150 100 100 100 2.0 2.0 10 150 2.0 2.0 2.0 100 100 200 200 200 200 100 100 250 200 100 100 100
Selector Guide 110
PlasticEncapsulated Surface Mount Transistors (continued)

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued) Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min
Case 318D04 SC59 NPN

MSD601RT1 MSD601ST1 MSD602RT1 MSD1328RT1
YR YS WR 1DR 25 25 25 20 210 290 120 200 340 460 240 350 2.0 2.0 150 500 150(1) 150(1) 200(1) 200(1)
Case 318D04 SC59 PNP

MSB709RT1 MSB710RT1
AR CR 25 25 210 120 340 240 2.0 150 100(1) 200(1)
Case 41902 SC70/SOT323 NPN

BC818WT1 BC81825WT1 BC81840WT1 BC846AWT1 BC846BWT1 BC847AWT1 BC847BWT1 BC847CWT1 BC848AWT1 BC848BWT1 BC848CWT1 MMBT2222AWT1 MMBT3904WT1 MSC3930BT1 MSD1819ART1
6I 6F 6G 1A 1B 1E 1F 1G 1J 1K 1L 1P AM VB ZR 45 45 45 65 65 45 45 45 30 30 30 40 40 20 50 100 160 250 110 200 110 200 420 110 200 420 100 100 70 210 600 400 600 220 450 220 450 800 220 450 800 300 300 140 340 100 100 100 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 150 10 1.0 2.0 100 100 100 100 100 100 100 100 300 300 150
Case 41902 SC70/SOT323 PNP

BC80825WT1 BC80840WT1 BC856AWT1 BC856BWT1 BC857AWT1 BC857BWT1 BC858AWT1 BC858BWT1 BC858CWT1 MMBT2907AWT1 MMBT3906WT1 MSB1218ART1
5F 6F 3A 3B 3E 3F 3J 3K 3L 20 2A BR 45 45 65 65 45 45 30 30 30 60 40 45 160 250 125 220 125 220 110 200 420 100 100 210 400 600 250 475 250 475 220 450 800 300 300 340 100 100 2.0 2.0 2.0 2.0 2.0 2.0 2.0 150 10 2.0 100 100 100 100 100 100 100 200 250
Case 419B01 SOT363 Dual NPN

MBT3904DW1T1 MBT3904DW9T1
MA MB 40 40 100 100 300 300 10 10 300 300
Case 419B01 SOT363 Dual PNP

MBT3906DW1T1 MBT3906DW9T1
(1) Typical
A2 A3
40 40
100 100
300 300
10 10
250 250
Selector Guide 111
C (OUT)

Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors (continued) Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max
B (IN)
R1 R2 E (GND)
mA
fT MHz Min
Case 419B01 SOT363 Dual Combination NPN and PNP

MBT3946DW1T1
46 40 100 300 10 250
Case 46301 SOT416/SC90 NPN

2SC4617
B9 50 120 560 1.0 180
Case 46301 SOT416/SC90 PNP

2SA1774
F9 50 120 560 1.0 140
Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors Table 13. for General Purpose Applications Pinout: 1Base, 2Emitter, 3Collector These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
Device NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm
Case 318D04 SC59

MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1
8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K
Case 31808 TO236AB (SOT23)

MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1
A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K
Selector Guide 112

Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors for General Purpose Applications (continued) Pinout: 1Base, 2Emitter, 3Collector
Device NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm
Case 41902 SC70/SOT323

MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1
8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 50 50 50 50 50 50 50 50 50 50 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K
Case 419B01 SOT363 Duals

MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 50 50 50 50 50 50 50 50 50 50 50 50 35 60 80 80 160 160 3.0 8.0 15 80 80 80 hFE @ IC Device Marking V(BR)CEO Min mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 100 100 100 100 100 100 100 100 100 100 100 100 IC mA Max 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K
R1 Ohm
R2 Ohm
Case 419B01 SOT363 Dual Combination NPN and PNP

MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1
Device NPN PNP NPN 11 12 13 14 15 16 3X 31 32 33 34 35 50 50 50 50 50 50 50 50 50 50 50 50 Marking PNP 35 60 80 80 160 160 3.0 8.0 15 80 80 80 V(BR)CEO Volts (Min) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 hFE@ IC Min mA 100 100 100 100 100 100 100 100 100 100 100 100 IC mA Max 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 10K 22K 47K 47K 1.0K 2.2K 4.7K 47K 47K 47K
R1 Ohm
R2 Ohm
Case 46301 SOT416/SC90

DTC114TE DTC114YE
DTA114YE DTA143EE 94 69 59 43 50 50 50 100 80 15 1.0 5.0 5.0 100 100 100 10K 10K 4.7K 47K 4.7K
Selector Guide 113

Table 14. PlasticEncapsulated Surface Mount Switching Transistors The following tables are a listing of devices intended for highspeed, low saturation voltage, switching applications. These devices have very fast switching times and low output capacitance for optimized switching performance. Pinout: 1Base, 2Emitter, 3Collector
Switching Time (ns) Device Marking ton toff V(BR)CEO Min hFE@ IC Max mA fT MHz Min

MMBT2369LT1 MMBT2369ALT1 BSV52LT1
M1J 1JA B2 12 12 12 18 18 18 15 15 12 20 20 40 120 100 100 10 400

MMBT3640LT1
2J 25 35 12 20 50 500
Table 15. PlasticEncapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators The following table is a listing of devices intended for smallsignal RF amplifier applications to VHF/UHF frequencies. These devices may also be used as VHF/UHF oscillators and mixers. Pinout: 1Base, 2Emitter, 3Collector
Device Marking V(BR)CEO ( ) Ccb(13) pF Max f T @ IC GHz Min mA

MMBTH10LT1 MMBT918LT1 MMBTH24LT1
3EM M3B M3A 25 15 30 0.7 1.7(14) 0.45 0.65 0.6 0.4 4.0 4.0 8.0

MMBTH81LT1 MMBTH69LT1
3D M3J 20 15 0.85 0.35(13) 0.6 2.0 5.0 10
Pinout: 1Emitter, 2Base, 3Collector Case 318D04 SC59 NPN

MSC2295BT1 MSC2295CT1 MSC3130T1
VB VC 1S 20 20 10 1.5(13) 1.5(13) 2.0(13) 0.15 0.15 1.4 1.0 1.0 5.0
Case 318D04 SC59 PNP

MSA1022CT1
(13) C re (14) C ob
EC
20
0.15
1.0
Selector Guide 114

Table 16. PlasticEncapsulated Surface Mount Choppers The following table is a listing of smallsignal devices intended for chopper applications where a higher than normal V(BR)CEO is required in the circuit application. Pinout: 1Base, 2Emitter, 3Collector
hFE @ IC Device Marking V(BR)CEO V(BR)EBO Min Max mA

MMBT404ALT1
2N 35 25 30 400 12
Table 17. PlasticEncapsulated Surface Mount Darlingtons The following table is a listing of smallsignal devices that have very high hFE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending hFE.
VCE(sat) Volts Max hFE @ IC Min Max mA
Device
Marking
V(BR)CES

MMBTA14LT1 MMBTA13LT1
1N 1M 30 30 1.5 1.5 20K 10K 100 100

MMBTA64LT1
2V 30 1.5 20K 100
Table 18. PlasticEncapsulated Surface Mount LowNoise Transistors The following table is a listing of smallsignal devices intended for low noise applications in the audio range. These devices exhibit good linearity and are candidates for hifi and instrumentation equipment. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of ascending NF.
NF dB Typ hFE@ IC V(BR)CEO Min Max mA fT MHz Min
Device
Marking

MMBT5089LT1 MMBT2484LT1 MMBT6428LT1 MMBT6429LT1
1R 1U 1KM 1L 2.0(15) 3.0(15) 3.0 3.0 25 60 50 45 400 250 500 800 10 10 10 10 50 100 100

MMBT5087LT1
(15) Max
2Q
2.0(15)
50
250
10
40
Selector Guide 115

Table 19. PlasticEncapsulated Surface Mount HighVoltage Transistors The following table is a listing of smallsignal highvoltage devices designed for direct line operation requiring high voltage breakdown and relatively low current capability. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.
hFE@ IC Device Marking V(BR)CEO Min Max mA fT MHz Min

MMBT6517LT1 MMBTA42LT1 MMBT5551LT1
1Z 1D G1 350 300 160 15 40 30 100 30 50 40 50 100

MMBT6520LT1 MMBTA92LT1 MMBT5401LT1
2Z 2D 2L 350 300 150 15 25 50 100 30 50 40 50 100
Table 20. PlasticEncapsulated Surface Mount Drivers The following is a listing of smallsignal devices intended for medium voltage driver applications at fairly high current levels. Pinout: 1Base, 2Emitter, 3Collector
hFE@ IC Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA

MMBTA06LT1 BSS64LT1
1GM AM 80 80 0.25 0.15 100 20 100 10

BSS63LT1 MMBTA56LT1 T1 2GM 100 80 0.25 0.25 0.90 30 100 25 100
The following devices are designed to conserve energy. They offer ultralow collector saturation voltage. Case 31808 TO236AB (SOT23) PNP
MMBT1010LT1
GLP 15 0.1 1.1 300 600 100
Case 31803 SC59 PNP

MSD1010T1
GLP 15 0.1 1.1 300 600 100
Table 21. PlasticEncapsulated Surface Mount General Purpose Amplifiers Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE@ IC Device Marking V(BR)CEO Min Max mA
Case 318E04 SOT223 NPN

BCP56T1
BH 80 40 250 150
Case 318E04 SOT223 PNP Pinout: 1Gate, 2Drain, 3Source, 4Drain

BCP53T1
AH 80 40 25 150
Selector Guide 116

Table 22. PlasticEncapsulated Surface Mount Switching Transistors Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE Device Marking ton toff V(BR)CEO Min Max @ IC (mA) fT Min (MHz)

PZT2222AT1
P1F 35 285 40 100 300 20 300
Case 318E04 SOT223 PNP

PZT2907AT1
P2F 45 100 60 100 300 50 200
Table 23. PlasticEncapsulated Surface Mount Darlingtons Pinout: 1Base, 2Collector, 3Emitter, 4Collector
VCE(sat) Max (V) hFE Min Max @ IC (mA)
Device
Marking
V(BR)CER

BSP52T1 PZTA14T1
AS3 P1N 80 30 1.3 1.5 2000 20k 500 100

BSP62T1 PZTA64T1
BS3 P2V 90 30 1.3 1.5 2000 20k 500 100
Table 24. PlasticEncapsulated Surface Mount HighVoltage Transistors Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE Device Marking V(BR)CEO Min Max @ IC (mA) fT Min (MHz)

BSP19AT1 PZTA42T1 BF720T1
SP19A P1D BF720 350 300 250 40 40 50 20 10 10 70 50 60

PZTA96T1 PZTA92T1 BSP16T1 BF721T1
ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30 50 150 150 10 10 10 10 50 50 15 60
Table 25. PlasticEncapsulated Surface Mount High Current Transistors Pinout: 1Base, 2Collector, 3Emitter, 4Collector
Device Marking V(BR)CEO VCE(sat) Volts hFE@ IC Min Max mA

PZT651T1 BCP68T1
651 CA 60 20 0.5 0.5 75 60 1000 1000

PZT751T1 BCP69T1
ZT751 CE 60 20 0.5 0.5 75 60 1000 1000
Selector Guide 117
FieldEffect Transistors
JFETs
JFETs operate in the depletion mode. They are available in both P and Nchannel and are offered in both Throughhole and Surface Mount packages. Applications include general purpose amplifiers, switches and choppers, and RF amplifiers and mixers. These devices are economical and very rugged. The drain and source are interchangeable on many typical FETs.
1 CASE 2904 TO226AA (TO92)
23
Table 26. JFET LowFrequency/LowNoise The following table is a listing of smallsignal JFETs intended for lownoise applications in the audio range. These devices exhibit good linearity and are candidates for hifi and instrumentation equipment.
Re Yfs Device mmho Min @f Re Yos @ f mho Max kHz V(BR)GSS V(BR)GDO Volts Min VGS(off) Volts Min Max Min IDSS mA Max Style
kHz
Ciss pF Max
Crss pF Max
Case 2904 TO226AA (TO92) NChannel

J202 2N5457 2N5458 1.0 1.5 1.0 1.0 50 50 1.0 1.0 7.0 7.0 3.0 3.0 40 25 25 0.8 0.5 1.0 4.0 6.0 7.0 0.9 1.0 2.0 4.5 5.0 9.0 5 5 5
Case 2904 TO226AA (TO92) PChannel

2N5460 2N5461 2N5462
1.0 1.5 2.0 1.0 1.0 1.0 75 75 75 1.0 1.0 1.0 7.0 7.0 7.0 2.0 2.0 2.0 40 40 40 0.75 1.0 1.8 6.0 7.5 9.0 1.0 2.0 4.0 5.0 9.0 16 7 7 7
Table 27. JFET HighFrequency Amplifiers The following is a listing of smallsignal JFETs that are intended for hifrequency applications. These are candidates for VHF/UHF oscillators, mixers and frontend amplifiers.
Re Yfs @ f Device mmho Min MHz Re Yos @ f mho Max MHz NF @ RG = 1K dB Max f MHz V(BR)GSS V(BR)GDO Volts Min VGS(off) Volts Min Max IDSS mA Min Max Style
Ciss pF Max
Crss pF Max

MPF102 2N5484 2N5485 2N5486 J308 J309 J310
(1) Typical
1.6 2.5 3.0 3.5 12(1) 12(1) 12(1)
100 100 400 400 100 100 100
200 75 100 100 250(1) 250(1) 250(1)
100 100 400 400 100 100 100
7.0 5.0 5.0 5.0 7.5 7.5 7.5
3.0 1.0 1.0 1.0 2.5 2.5 2.5
3.0 4.0 4.0 1.5(1) 1.5(1) 1.5(1)
100 400 400 100 100 100
25 25 25 25 25 25 25
0.3 0.5 2.0 1.0 1.0 2.0
8.0 3.0 4.0 6.0 6.5 4.0 6.5
2.0 1.0 4.0 8.0 12 12 24
20 5.0 10 20 60 30 60
5 5 5 5 5 5 5
Selector Guide 118
JFETs (continued)
Table 28. JFET Switches and Choppers The following is a listing of JFETs intended for switching and chopper applications.
RDS(on) @ ID Device Max mA VGS(off) Volts Min Max Min IDSS mA Max V(BR)GSS V(BR)GDO Volts Min
Ciss pF Max
Crss pF Max
ton ns Max
toff ns Max
Style

J112 MPF4392 2N5639 MPF4393 2N5640 2N5555 J110
(1) Typical (16) V GS(f)
50 60 60 100 100 150 18
1.0 1.0
1.0 0.5
5.0 (8.0)(1) (12)(1) (6.0)(1) 1.0(16) 4.0
5.0 25 25 5.0 5.0 15 10
75 30
35 30 30 30 30 25 25
28 10 10 10 10 5.0
5.0 3.5 4.0 3.5 4.0 1.2
15 15 18 10
35 55 45 25
5 5 5 5 5 5 5
Selector Guide 119
TMOS FETs
1 2 3
CASE 2905 TO226AE 1WATT (TO92) D CASE 2904 TO226AA (TO92)
2 3
G S
Table 29. TMOS Switches and Choppers The following is a listing of smallsignal TMOS devices that are intended for switching and chopper applications. These devices offer low RDS(on) characteristics.
RDS(on) @ ID Device Max A VGS(th) Volts Min Max
V(BR)DSS Volts Min
Ciss pF Max
Crss pF Max
ton ns Max
toff ns Max
Style
Case 2905 TO226AE (1WATT TO92) NChannel

MPF930 MPF960 MPF6659 MPF990 MPF6660 MPF6661 MPF910 VN10LM
1.4 1.7 1.8 2.0 3.0 4.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 1.0 1.0 0.8 1.0 0.8 0.8 0.3 0.8 3.5 3.5 2.0 3.5 2.0 2.0 2.5 2.5 35 60 35 90 60 90 60 60 70(1) 70(1) 30(1) 70(1) 30(1) 30(1) 60 20(1) 20(1) 4(1) 20(1) 4(1) 4(1) 5.0 15 15 5.0 15 5.0 5.0 10 15 15 5.0 15 5.0 5.0 10 22 22 22 22 22 22 22 22

VN0300L 2N7000 BS170 VN0610LL VN2406L BS107A 2N7008 VN2222LL VN2410L BS107
(1) Typical
1.2 5.0 5.0 5.0 6.0 6.4 7.5 7.5 10 14
1.0 0.5 0.2 0.5 0.5 0.25 0.5 0.5 0.5 0.2
0.8 0.8 0.8 0.8 0.8 1.0 1.0 0.6 0.8 1.0
2.5 3.0 3.0 2.5 2.0 3.0 2.5 2.5 2.0 3.0
60 60 60 60 240 200 60 60 240 200
100 60 25(1) 60 125 60(1) 50 60 125 60(1)
25 5.0 3.0(1) 5.0 20 6.0(1) 5.0 5.0 20 6.0(1)
30 10 10 10 8.0 15 20 10 8.0 15
30 10 10 10 23 15 20 10 23 15
22 22 30 22 22 30 22 22 22 30
Selector Guide 120
Surface Mount FETs

This section contains the FET plastic packages available for surface mount applications. Most of these devices are the most popular metalcan and insertion type parts carried over to the new surface mount packages.
1 2
CASE 31808 TO236AB SOT23 6 5
CASE 41902 SC70/SOT323 4
3 CASE 419B01 SOT363
1 CASE 318E04 SOT223 2 3
Table 30. Surface Mount RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1Drain, 2Source, 3Gate
NF Device Marking dB Typ f MHz mmhos Min Yfs @ VDS mmhos Max Volts V(BR)GSS Style
Case 31808 TO236AB (SOT23) NChannel

MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1
6U 6T M6C M6A M6B 1.5 1.5 1.5 2(3) 2.0 450 450 450 100 100 10 8.0 10 4.5 3.0 20 18 18 7.5 6.0 10 10 10 15 15 25 25 25 30 25 10 10 10 10 10
Case 419B01 SOT363 Dual NChannel

MBF4416DW1T1
(3) Max
M6
2.0
100
4.5
7.5
15
30
Table 31. Surface Mount GeneralPurpose JFETs The following table is a listing of surface mount smallsignal general purpose FETs. These devices are intended for smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and generalpurpose, lowvoltage switches. Pinout: 1Drain, 2Source, 3Gate
Yfs @ VDS Device Marking V(BR)GSS mmhos Min mmhos Max Volts mA Min IDSS mA Max Style

MMBF5457LT1
6D 25 1.0 5.0 15 1.0 5.0 10
Case 31808 TO236AB (SOT23) PChannel

MMBF5460LT1
M6E 40 1.0 4.0 15 1.0 5.0 10
Case 419B01 SOT363 Dual NChannel

MBF5457DW1T1
(3) Max
6D
25
1.0
5.0
15
1.0
5.0
Selector Guide 121
Surface Mount FETs (continued)

Table 32. Surface Mount Choppers/Switches JFETs The following is a listing of smallsignal surface mount JFET devices intended for switching and chopper applications. Pinout: 1Drain, 2Source, 3Gate
RDS(on) Ohms Max toff ns Max VGS(off) V(BR)GSS 30 30 30 Volts Min Volts Max mA Min IDSS mA Max Style
Device
Marking

MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
6J 6K 6G 30 60 100 20 35 50 4.0 2.0 0.5 10 5.0 3.0 50 25 5.0 150 75 30 10 10 10
Case 31808 TO236AB (SOT23) PChannel

MMBFJ175LT1 MMBFJ177LT1
6W 6Y 125 300 30 30 3.0 0.8 6.0 2.5 7.0 1.5 60 20 10 10
Table 33. TMOS FETs The following is a listing of smallsignal surface mount TMOS FETs which exhibit low RDS(on) characteristics. Pinout: 1Gate, 2Source, 3Drain
RDS(on) @ ID Device Marking Ohm mA VDSS 60 100 50 60 20 20 30 VGS(th) Volts Min Volts Max Switching Time ton ns 10 20 20 20 2.5 2.5 2.5 toff ns 10 40 20 20 15 16 16 Style

MMBF170LT1 BSS123LT1 BSS138LT1 2N7002LT1 MMBF0201NLT1 MGSF1N02LT1 MGSF1N03LT1 6Z SA J1 702 N1 N2 N3 5.0 6.0 3.5 7.5 1.0 0.085 0.09 200 100 200 500 300 1200 1200 0.8 0.8 0.5 1.0 1.0 1.0 1.0 3.0 2.8 1.5 2.5 2.4 2.4 2.4 21 21 21 21 21 21 21
Case 31808 TO236 (SOT23) PChannel

BSS84LT1 MMBF0202PLT1 MGSF1P02LT1 MGSF1P02ELT1
PD P3 PC PE 6.0 1.4 0.35 0.16 100 200 1500 1500 50 20 20 20 1.0 1.0 1.0 0.7 2.4 2.0 2.4 1.2 2.5 2.5 2.5 2.5 16 16 16 15 21 21 21 21
Pinout: 1Gate, 2Drain, 3Source, 4Drain

RDS(on) Device Marking Ohm mA VDSS 60 90 240 200 VGS(th) Volts Min Volts Max Switching Time ton ns 15 5.0 15 toff ns 15 5.0 15 Style
Case 318E04 SOT223 NChannel

MMFT960T1 MMFT6661T1 MMFT2406T1 MMFT107T1
FT960 T6661 T2406 FT107 1.7 4.0 10 14 1000 1000 200 200 1.0 0.8 0.8 1.0 3.5 2.0 2.0 3.0 3 3 3 3
Case 41902 SC70/SOT323 NChannel

MMBF2201NT1
N1 1.0 300 20 1.0 2.4 2.5 15 8
Case 41902 SC70/SOT323 PChannel

MMBF2202PT1
P3 2.2 200 20 1.0 2.4 2.5 16 8
Selector Guide 122
Tuning and Switching Diodes

Tuning Diodes Abrupt Junction
Motorola supplies voltagevariable capacitance diodes serving the entire range of frequencies from HF through UHF. Used in RF receivers and transmitters, they have a variety of applications, including: Phaselocked loop tuning systems Local oscillator tuning Tuned RF preselectors RF filters RF phase shifters RF amplifiers Automatic frequency control Video filters and delay lines Harmonic generators FM modulators Two families of devices are available: Abrupt Junction and Hyper Abrupt Junction. The Abrupt Junction family includes devices suitable for virtually all tunedcircuit and narrowrange tuning applications throughout the spectrum.
CASE 2904 TO226AA (TO92) 1 23 2 CASE 5102 DO204AA (DO7) 1 STYLE 1 1 2 STYLE 15 2 3
CASE 18202 TO226AC (TO92) 1 2

3
2 Cathode STYLE 1
1 Anode
1 2
3 Cathode STYLE 8
1 Anode
3 1 1 CASE 46301 SOT416/SC90 2 3 2 STYLE 9
Typical Characteristics
Diode Capacitance versus Reverse Voltage
100 70 C T , DIODE CAPACITANCE (pF) 50 30 20 10 7 5 3 2 0.6 1 2 4 6 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 1 0.1 TA = 25C f = 1 MHz C T , DIODE CAPACITANCE (pF) 1N5148 1000
MV1638 100
1N5456A MV1650
(See Tables 34 Thru 36) 10 MV1628
1 10 VR, REVERSE VOLTAGE (VOLTS)
100
1000 C T , DIODE CAPACITANCE (pF) MV2115 C T , DIODE CAPACITANCE (pF) MV2109 MMBV2109LT1 100
100 70
40
MMBV432LT1 MV104
10 MV2101 MMBV2101LT1 1 0.1 MV2105 MMBV2105LT1 100
20
TA = 25C f = 1 MHz EACH DIODE 0.5 1 2 3 5 10 VR, REVERSE VOLTAGE (VOLTS) 20 30
10 0.3
(See Tables 37 and 38)
(See Table 39)
Selector Guide 123
Tuning Diodes Abrupt Junction (continued)

Table 34. GeneralPurpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 4.0 Volts/60 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device(19) pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C4/C60 Min Q 4.0 V, 50 MHz Min
Case 5102 DO204AA (DO7)

1N5148 42.3 47 51.7 60 3.2 200
Table 35. GeneralPurpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit very high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device(20) pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Min

1N5446ARL 1N5448ARL 1N5456A
(19)Suffix A = 10.0% (20)Suffix B = 5.0%
16.2 19.8 90
18 22 100
19.8 24.2 110
30 30 30
2.6 2.6 2.7
350 350 175
Table 36. GeneralPurpose Glass Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/20 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C2/C20 Min Q 4.0 V, 50 MHz Typ

MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 10.8 13.5 16.2 19.8 29.7 73.8 90 12 15 18 22 33 82 100 13.2 16.5 19.8 24.2 36.3 90.2 110 20 20 20 20 20 20 20 2.0 2.0 2.0 2.0 2.0 2.0 2.0 300 250 250 250 200 150 150
Table 37. GeneralPurpose Plastic Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of plastic package, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C4/C30 Min Q 4.0 V, 50 MHz Typ
Case 18202 TO226AC (TO92) 2Lead

MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
6.1 10.8 13.5 24.3 29.7 42.3 90 6.8 12 15 27 33 47 100 7.5 13.2 16.5 29.7 36.3 51.7 110 30 30 30 30 30 30 30 2.5 2.5 2.5 2.5 2.5 2.5 2.6 400 350 350 250 200 150 100
Selector Guide 124
Tuning Diodes Abrupt Junction (continued)

Table 38. Surface Mount Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of surface mount abrupt junction tuning diodes intended for generalpurpose variable capacitance circuit applications.
CT @ VR = 4.0 V, 1.0 MHz pF Device Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Typ
Case 31808 DO236AB (SOT23)

MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
6.1 9.0 13.5 19.8 24.3 29.7 6.8 10 15 22 27 33 7.5 11 16.5 24.2 29.7 36.3 30 30 30 30 30 30 2.5 2.5 2.5 2.5 2.5 2.5 400 350 350 300 250 200
Table 39. Abrupt Tuning Diodes for FM Radio Dual The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22) Device pF Min pF Max Volts Cap Ratio C3/C30 Min Q 3.0 V, 50 MHz Min
V(BR)R Volts
Device Marking
Style

MV104
37 42 3.0 2.5 100 32 15

MMBV432LT1
(21)C2/C8 (22)Each Diode
43
48.1
2.0
1.5(21)
100
14
M4B
Selector Guide 125
Tuning Diodes HyperAbrupt Junction

The HyperAbrupt family exhibits higher capacitance, and a much larger capacitance ratio. It is particularly well suited for widerrange applications such as AM/FM radio and TV tuning.
1
2 CASE 5102 DO204AA (DO7) 1 Cathode STYLE 1 2 Anode
1 2
CASE 18202 TO226AC (TO92)
2 Anode STYLE 1
1 Cathode
3 1 2
3 Cathode STYLE 8
1 Anode
4 1 2 3 CASE 318E04 SOT223 1 STYLE 2 2, 4
Diode Capacitance versus Reverse Voltage
20 18 C T , DIODE CAPACITANCE (pF) 16 14 12 10 8 6 4 2 0 TA = 25C f = 1 MHz MMBV105GLT1 C T , CAPACITANCE (pF) 40 36 32 28 24 20 16 12 8 4 0.3 0.5 1 2 3 5 10 20 30 0 1 3 10 30 100 MMBV109LT1 MV209
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
Selector Guide 126
Tuning Diodes HyperAbrupt Junction (continued)

40 C T , DIODE CAPACITANCE (pF) 32 24 16 8 0 1 3 10 20 VR, REVERSE VOLTAGE (VOLTS) MMBV409LT1 MV409 C T , DIODE CAPACITANCE (pF) 10 9 8 7 6 5 4 3 2 1 0 MMBV809LT1
0.5 1
3 4 5 8 10 15 VR, REVERSE VOLTAGE (VOLTS)
40 C T , DIODE CAPACITANCE (pF) C T , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 8 4 0 0.3 TA = 25C f = 1 MHz MMBV3102LT1
50 40 f = 1 MHz 30 20 10 MMBV609LT1
0.5
10
20
30
10
20
30
40
Figure 6. Diode Capacitance Each Die
MV7005T1
1000 C T , DIODE CAPACITANCE (pF) 500 C T , CAPACITANCE (pF) 500 300 200 100 50 30 20 10 1 MV1405 MV1403 MV1404 2 MV7404T1 3 4 5 6 7 8 9 10 TA = 25C f = 1 MHz
100 50
10
Figure 7. Capacitance versus Reverse Voltage
Figure 8. Diode Capacitance versus Reverse Voltage
Selector Guide 127
Tuning Diodes HyperAbrupt Junction (continued)

Table 40. HyperAbrupt Tuning Diodes for Telecommunications Single The following is a listing of hyperabrupt tuning diodes intended for high frequency, FM radio, and TV tuner applications.
CT @ VR (f = 1.0 MHz) Device pF Min pF Max Volts Cap Ratio @ VR Min Max Volts 3.0 V Min Q 50 MHz Max V(BR)R Volts Device Marking Case Style CV Curve Fig
Case 18202 TO226AC (TO92)

MV209 MV409
26 26 32 32 3.0 3.0 5.0 1.5 6.5 2.0 3/25 3/8 200 200 30 20 1 1 2 3

MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1 MMBV3102LT1
1.5 26 26 4.5 20 2.8 32 32 6.1 25 25 3.0 3.0 2.0 3.0 4.0 5.0 1.5 1.8 4.5 6.5 6.5 1.9 2.6 3/25 3/25 3/8 2/8 3/25 200 200 200 300 200 30 30 20 20 30 M4E M4A X5 5K M4C 8 8 8 8 8 1 2 3 4 5

MBV109T1
26 32 3.0 5.0 6.5 3/25 200 30 M4A 8
Table 41. HyperAbrupt Tuning Diodes for Communications Dual

CT @ VR (f = 1.0 MHz) Device pF Min pF Max Volts Cap Ratio @ VR Min Max Volts 3.0 V Min Q 50 MHz Max V(BR)R Volts Device Marking Case Style CV Curve Fig

MMBV609LT1
26 32 3.0 1.8 2.4 3/8 250 20 5L 9 6
Table 42. HyperAbrupt High Capacitance Voltage Variable Diode Surface Mount The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring large tuning capacitance.
CT @ f = 1.0 MHz Device V(BR)R Volts IR nA Min pF Max pF Cap Ratio Min Q Min Style CV Curve Figure
Case 318E04 SOT223 Pinout: 1Anode, 2, 4Cathode, 3NC

MV7005T1 MV7404T1
15 12 100 100 400 96 520 144 12(26) 10(27) 150(28) 200(29) 2 2 8 11
Table 43. HyperAbrupt High Capacitance Tuning Diodes Axial Lead Glass Package
CT @ VR Device pF Min pF Max Volts Cap Ratio C2/C10 Min Q 2.0 V, 1.0 MHz Min V(BR)R Volts CV Curve Figure
Style

MV1404 MV1403 MV1405
(26) V = 1.0 V/V = 9.0 V R R (27) V = 2.0 V/V = 10 V R R (28) V = 1.0 V, f = 1.0 MHz R (29) V = 2.0 V, f = 1.0 MHz R
96 140 200
144 210 300
2.0 2.0 2.0
10 10 10
200 200 200
12 12 12
1 1 1
11 11 11
Selector Guide 128
Schottky Diodes
Schottky diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency applications. They provide stable electrical characteristics by eliminating the pointcontact diode presently used in many applications.
1 2
CASE 18202 TO226AC (TO92) STYLE 1 2 Cathode 1 Anode 1 Cathode
CASE 42504 SOD123 STYLE 1 2 Anode
CASE 41902 SC70/SOT323 1 Single

3 1 2
CASE 419B01, STYLE 6 SOT363
CASE 31808 TO236AB SOT23 STYLE 9 STYLE 11 21 Series 2 3
STYLE 8 1 Single 3 1
3 Common Cathode STYLE 12 Anode 3 Cathode 1 2 Cathode 1
STYLE 19 2 Series 3
Capacitance versus Reverse Voltage
1 MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* TA = 25C C T , CAPACITANCE (pF) 2.8 2.4 2 1.6 1.2 0.8 0.4 0.6 0 0 1 2 3 * EACH DIODE 4 0 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) MBD701, MMBD701LT1 MBD301, MMBD301LT1 TA = 25C
C T , CAPACITANCE (pF)
0.9
0.8
0.7
(See Table 44)
Selector Guide 129
Schottky Diodes (continued)

Table 44. Schottky Diodes The following is a listing of Schottky diodes that exhibit low forward voltage drop for improved circuit efficiency.
V(BR)R Volts CT @ VR pF Max VF @ 10 mA Volts Max IR @ VR nA Max Minority Lifetime pS (TYP) Device Marking
Device
Style

MBD701 MBD301 MBD101 BAS40LT1 BAS4004LT1 BAS70LT1 BAT54ALT1 BAT54LT1 BAT54SLT1 MMBD701LT1 MMBD301LT1 MMBD101LT1 BAS4006LT1 BAS7004LT1(23) MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD452LT1
70 30 7.0 40 40 70 30 30 30 70 30 7.0 40 70 7.0 7.0 7.0 7.0 30 30 70 30 4 30 30 70 30 7.0 20 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 5.0 @ 1.0 V 5.0 @ 1.0 V 2.0 @ 0 V 10 @ 1.0 V 10 @ 1.0 V 10 @ 1.0 V 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 5.0 @ 1.0 V 2.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.0 @ 0 V 1.5 @ 1.5 V 10 @ 1.0 V 1.0 @ 20 V 1.5 @ 15 V 1.0 @ 0 V 10 @ 1.0 V 1.5 @ 15 V 1.0 @ 20 V 10 @ 1.0 V 1.0 @ 0 V 2.5 @ 1.0 V 1.0 0.6 0.6 0.5 @ 30 mA 0.5 @ 30 mA 0.75 0.4 0.4 0.4 1.0 0.6 0.6 0.5 @ 30 mA 0.75 0.6 0.6 0.6 0.6 0.6 0.4 1.2 0.6 0.6 0.4 0.6 1.0 0.4 0.6 0.37 @ 1 mA 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 1000 @ 25 V 1000 @ 25 V 100 @ 50 V 2000 @ 25 V 2000 @ 25 V 2000 @ 25 V 200 @ 35 V 200 @ 25 V 250 @ 3.0 V 1000 @ 25 V 100 @ 50 V 250 @ 3.0 V 250 @ 3.0 V 250 @ 3.0 V 250 @ 3.0 V 200 @ 25 V 2000 @ 25 V 0.2 @ 35 V 0.2 @ 25 V 0.25 @ 3 V 2000 @ 25 V 0.2 @ 25 V 0.2 @ 35 V 2000 @ 25 V 250 @ 3.0 V 0.2 @ 10 V 15 15 15 15 15 15 15 15 15 15 15 15 15 B1 BE LV3 LD3 5H 4T 4M M5G M4F M6H MJ1 5N 5H 4T 4M 4T 5H M5 B3 1 1 1 8 12 8 12 8 11 8 8 8 11 12 11 19 9 12 11 1 1 1 1 2 2 2 9 9 2
Case 31808 TO236AB (SOT23) Single
Case 31808 TO236AB (SOT23) Dual
Case 42504 (SOD123)

BAT54T1 MMSD701T1 MMSD301T1 MMSD101T1 BAT54WT1 MMBD330T1 MMBD770T1 BAT54SWT1 MMBD352WT1 MMBD717LT1(23)
(23) Common Anode
Case 41902 (SC70/SOT323) Single
Case 41902 (SC70/SOT323) Dual
Case 419B01 SOT363 Duals

V(BR)R Device Marking BL M4 T4 H5 Min Volts 30 7.0 30 70 @ IBR (A) 10 10 10 10 Max (A) 2.0 200 200 200 IR @ VR Volts 25 25 25 25 Min Volts VF Max Volts 0.32 0.6 0.4 0.5 @ IF (mA) 1.0 1.0 1.0 1.0 (30) CT( ) Max (pF) 1.0 1.0 1.5 1.0 trr Max (ns) 5.0 Case Style 6 6 6 6
MBD54DWT1 MBD110DWT1 MBD330DWT1 MBD770DWT1

(30) V = 0 V, f = 1.0 MHz R
Selector Guide 130
Switching Diodes
Smallsignal switching diodes are intended for low current switching and steering applications. HotCarrier, PIN and generalpurpose diodes allow a wide selection for specific application requirements.
1 CASE 2904 TO226AA (TO92) 2 3 STYLE 3 1 2 CASE 18202 TO226AC (TO92)
Capacitance versus Reverse Voltage
10 C T , DIODE CAPACITANCE (pF) TA = 25C f = 1 MHz
1 3 STYLE 4 1 3
2 STYLE 1 2 Cathode 2 1 Anode
MPN3404 1
1
0.5 0.3 0.2 0 0
MMBV3401LT1 20 V MAX VR 12 18 24 30 36
MPN3700 MMBV3700LT1 42 48 54 1
CASE 31808 TO236AB SOT23 STYLE 12 3 1 3 COMMON ANODE 2
STYLE 8
SINGLE
(See Table 45)

STYLE 1 1 Cathode CASE 42504 SOD123 2 Anode 1 3 COMMON CATHODE STYLE 11 3 ANODE 3 2 CATHODE 3 1 3 SERIES 2 1 STYLE 9 2
STYLE 18 2 SINGLE 3
STYLE 19 2 3 SERIES
CASE 46301 SOT416/SC90 1 CATHODE STYLE 4 2 1 ANODE STYLE 5 2 CASE 318D04 SC59
3 2 1 STYLE 2 STYLE 4 3 SINGLE 2 STYLE 4 2 1 3 COMMON ANODE 2 1 3 COMMON CATHODE STYLE 3 2 1 3 COMMON ANODE STYLE 5 2 2 SINGLE 3
STYLE 2 1 SINGLE STYLE 5 1 3 COMMON CATHODE 3
3 CASE 41902 SC70/SOT323 1
Selector Guide 131
Switching Diodes (continued)

Table 45. PIN Switching Diodes The following PIN diodes are designed for VHF band switching and generalpurpose low current switching applications.
V(BR)R Volts Min CT @ VR @ 1.0 MHz pF Max Volts IR @ VR A Max Series Resistance Ohm Max
Device
Device Marking
Style

MPN3700 MPN3404 200 20 1.0 2.0 20 15 0.1 @ 150 0.1 @ 25 V 1.0 @ 10 mA 0.85 @ 10 mA 1 1

MMBV3700LT1 MMBV3401LT1 200 35 1.0 1.0 20 20 0.1 @ 150 0.1 @ 25 V 1.0 @ 10 mA 0.7 @ 10 mA 4R 4D 8 8
Table 46. GeneralPurpose Signal and Switching Diodes Single The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.
V(BR)R Device Marking Min Volts @ IBR (A) Max (A) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

BAS21LT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1
JS 5D A6 5A JF 250 100 75 70 70 100 100 100 100 100 0.1 5.0 1.0 0.1 2.5 200 75 75 50 70 0.85 1.0 1.0 1.0 1.1 1.0 100 10 50 100 50 5.0 4.0 2.0 2.5 1.5 50 4.0 6.0 4.0 6.0 8 8 8 8 18
Case 318D04 SC59

M1MA151AT1 M1MA151KT1
MA MH 40 40 100 100 0.1 0.1 35 35 1.2 1.2 100 100 2.0 2.0 3.0 3.0 4 2

BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1
A6 MH MI J6 75 40 80 100 1.0 100 100 100 0.02 0.1 0.1 5.0 20 35 75 75 1.25 1.2 1.2 1.0 150 100 100 10 2.0 2.0 2.0 4.0 6.0 3.0 3.0 4.0 2 2 2 2
Case 42504 SOD123

MMSD914T1 MMSD71RKT1
5D 6S 100 100 5.0 0.5 75 80 1.0 1.2 10 100 4.0 2.0 4.0 4.0 1 1
(30) V = 0 V, f = 1.0 MHz R
Selector Guide 132

Table 47. GeneralPurpose Signal and Switching Diodes Dual The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.
V(BR)R Device Marking Min Volts @ IBR (A) Max (A) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1
M5C A2 A6 A4 A7 A1 5BM JA A3 A5 100 75 75 70 70 70 70 50 35 35 100 100 100 100 100 100 100 5.0 100 100 1.0 0.1 0.1 5.0 2.5 2.5 0.1 0.1 0.1 0.1 50 50 50 70 70 70 50 50 30 30 0.75 0.85 1.1 1.0 1.0 1.0 1.0 1.0 1.1 1.0 1.0 1.0 100 10 10 50 50 50 100 100 10 10 1.5 4.0 4.0 1.5 1.5 2.0 2.5 2.0 4.0 4.0 4.0 4.0 4.0 6.0 4.0 6.0 4.0 4.0 4.0 4.0 11 12 9 9 11 12 9 9 12 9
Case 318D04 SC59

M1MA151WAT1 M1MA151WKT1
MN MT 40 40 100 100 0.1 0.1 35 35 1.2 1.2 100 100 15 2.0 10 3.0 5 3

M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1
MU MO A1 A4 A7 F7 MT MN 80 80 70 70 70 70 40 40 100 100 100 100 100 100 100 100 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 75 75 70 70 70 70 35 35 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 100 100 50 50 50 50 100 100 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.0 10 6.0 6.0 6.0 6.0 3.0 10 5 4 4 5 9 10 5 4
Case 46301 SOT416/SC90 (Common Anode)

DAP222
P9 80 100 100 70 1.2 100 3.5 4.0 4
Case 46301 SOT416/SC90 (Common Cathode)

DAN222
N9 80 100 100 70 1.2 100 3.5 4.0 5
Table 48. LowLeakage Medium Speed Switching Diodes Single

V(BR)R Device Marking Min Volts @ IBR (A) Max (nA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

BAS116LT1 MMBD1000LT1
JV AY 75 30 100 100 5.0 0.5 75 30 1.0 0.95 10 10 2.0 2.0 3000 3000 8 6
Case 41902 (SOT323)/(SC70)

MMBD2000T1
DH 30 100 0.5 30 0.95 10 2.0 3000 2
Case 318D04 (SC59)

MMBD3000T1
XP 30 100 0.5 30 0.95 10 2.0 3000 2
Case 42504 (SOD123)

MMSD1000T1
4K 30 100 0.5 30 0.95 10 2.0 3000 1
Selector Guide 133

Table 49. LowLeakage Medium Speed Switching Diodes Dual
V(BR)R Device Marking Min Volts @ IBR (A) Max (nA) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style

BAV170LT1 BAV199LT1 BAW156LT1 MMBD1005LT1 MMBD1010LT1
JX JY JZ A3 A5 70 70 70 30 30 100 100 100 100 100 5.0 5.0 5.0 0.5 0.5 70 70 70 30 30 1.0 1.0 1.0 0.95 0.95 10 10 10 10 10 2.0 2.0 2.0 2.0 2.0 3000 3000 3000 3000 3000 9 11 12 12 9
Case 41902 (SOT323)/(SC70) DUAL

MMBD2005T1 MMBD2010T1
DI DP 30 30 100 100 0.5 0.5 30 30 0.95 0.95 10 10 2.0 2.0 3000 3000 4 5
Case 318D04 (SC59) DUAL

MMBD3005T1 MMBD3010T1
(30) V = 0 V, f = 1.0 MHz R
XQ XS
30 30
100 100
0.5 0.5
30 30
0.95 0.95
10 10
2.0 2.0
3000 3000
5 3
Selector Guide 134
Multiple Switching Diodes

Multiple diode configurations utilize monolithic structures fabricated by the planar process. They are designed to satisfy fast switching requirements as in core driver and encoding/decoding applications where their monolithic configurations offer lower cost, higher reliability and space savings.
14 1
16 1
CASE 751A03 SO14 PLASTIC
CASE 751B05 SO16 PLASTIC
Diode Array Diagrams 1

11 3 8 12 9 10 13 14 1 4 5 6 7 2
4
8 Diode Array (Common Anode)
14 2 3 5 7 8 9 11 12 7 6 5
7
4 3 2 1
Dual 10 Diode Array
NC Pin 1, 4, 6, 10, 13
Isolated 7 Diode Array
10 11 12 13 14
2
1 1 2 14 3 5 7 8 9 11 12
5
8 2 14 3 11 12 4 5 9 10 7
16 Diode Array
Dual 8 Diode Array
NC Pin 4,6,10,13
NC Pin 6, 13
3
8 Diode Array (Common Cathode)
14 2 3 5 7 8 9 11 12 1 2 3 4
6
5 6 7 8
NC Pin 1, 4, 6, 10, 13
Isolated 8 Diode Array
16 15 14 13 12 11 12
Table 50. Diode Arrays Case 751A03 SO14

MMAD130 MMAD1103 MMAD1105 MMAD1106 MMAD1107 MMAD1109
Dual 10 Diode Array 16 Diode Array 8 Diode Common Cathode Array 8 Diode Common Anode Array Dual 8 Diode Array 7 Isolated Diode Array 1 2 3 4 5 7
Case 751B05 SO16

MMAD1108
8 Isolated Diode Array 6
Selector Guide 135

1 2
3 2 1
3 1 2
CASE 318D04 SC59
CASE 318E04 SOT223
PlasticEncapsulated Surface Mount Devices

Energy. Its something Motorola is putting a lot of energy into helping save. Thats why were introducing our GreenLine portfolio of devices, featuring energyconserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the power demands of your products. Wide Range of Applications Currently, our portfolio consists of three families. LowLeakage Switching Diodes: With reverse leakage specifications guaranteed to 500 pA, they help extend battery life, making them ideal for small batteryoperated systems in which standby power is essential. Applications include ESD protection, reverse voltage protection, and steering logic. Bipolar Output Driver Transistors: Offering ultralow collector saturation voltage, they deliver more energy to the intended load with less power wasted through dissipation loss. They are especially effective in todays lower voltage batterypowered applications, and prolong battery life in portable and handheld communications and personal digital equipment.
6 1
3
4 2
1 2 CASE 41902 SC70/SOT323

1
CASE 318G02 TSOP6
CASE 42504 SOD123
Small Signal HDTMOS: These devices provide our lowest ever drainsource resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss, making them especially effective for lowcurrent applications where energy conservation is crucial, such as low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias switching. This makes them ideal for portable computertype products or any system where the combination of power management and energy conservation is key. Save Energy Save Money In an increasingly powerhungry world, Motorolas GreenLine portfolio makes powerful sense. So much sense that we plan to continue adding devices to the portfolio. Chances are, there are Motorola GreenLine devices applicable to one or more of your products ones that can help save energy, dollars and the environment.
Table 51. Bipolar Driver Transistor PNP These offer ultralow collector saturation voltage. Pinout: 1Base, 2Emitter, 3Collector
hFE@ IC Device Type Marking GLP GLP Case SOT23 SC59 V(BR)CEO 15 15 VCE(sat) 0.1 0.1 VBE(sat) 1.1 1.1 Min 300 300 Max 600 600 mA 100 100
MMBT1010LT1 MSD1010T1
Selector Guide 136
GreenLine (continued)
Table 52. Low Leakage Switching Diodes These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
V(BR)R Device Type Marking AY A3 A5 DH DI DP XP XQ XS 4K Case SOT23 SOT23 SOT23 SC70 SC70 SC70 SC59 SC59 SC59 SOD123 Style Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Min Volts 30 30 30 30 30 30 30 30 30 30 @ IBR (A) 100 100 100 100 100 100 100 100 100 100 Max (nA) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR @ VR Volts 30 30 30 30 30 30 30 30 30 30
MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1 MMBD3000T1 MMBD3005T1 MMBD3010T1 MMSD1000T1
Table 53. Small Signal HDTMOS MOSFETs These provide the lowest drainsource resistance versus package size.
RDS(on) Max Device Type Marking Channel @Vgs1 (10 V) @Vgs2 (4.5 V) @Vgs3 (2.5 V) VDSS VGS(th) Volts Min Volts Max Switching Time t(on) ns t(off) ns Style
Case 31808 TO236AB (SOT23) PChannel and NChannel

2N7002LT1 BSS84LT1 BSS123LT1 BSS138LT1 MMBF0201NLT1 MMBF0202PLT1 MGSF1N02LT1 MGSF1N03LT1 MGSF1P02LT1 MGSF1P02ELT1
702 PD SA J1 N1 P3 N P N N N P N N P P 7.5 6.0 1.0 1.4 0.085 0.10 3.5 0.16 10 3.5 1.4 3.5 0.125 0.145 0.5 0.21 60 50 100 50 20 20 20 30 20 20 1.0 0.8 0.8 0.5 1.0 1.0 1.0 1.0 1.0 0.7 2.5 2.0 2.8 1.5 2.4 2.4 2.4 2.4 2.4 1.2 2.5 20 20 2.5 2.5 2.5 2.5 2.5 2.5 16 40 20 15 16 16 16 16 15 21 21 21 21 21 21 21 21 21 21
Case 318G02 TSOP6 PChannel and NChannel

MGSF3441VT1 MGSF3441XT1 MGSF3442VT1 MGSF3442XT1 MGSF3454VT1 MGSF3454XT1 MGSF3455VT1 MGSF3455XT1
P P N N N N P P 0.065 0.065 0.10 0.10 0.10 0.10 0.07 0.07 0.095 0.095 0.19 0.19 0.135 0.135 0.095 0.095 20 20 20 20 30 30 30 30 0.45 0.45 0.6 0.6 1.0 1.0 1.0 1.0 27 27 8.0 8.0 10 10 10 10 52 52 36 36 20 20 20 20 1 1 1 1 1 1 1 1

MMBF2202PT1 MMBF2201NT1
P3 N1 P N 2.2 1.0 3.5 1.4 20 20 1.0 1.0 2.4 2.4 2.5 2.5 16 15 7 7
Selector Guide 137
Small Signal Multiintegrated Devices

1 2
4
1 2
3 CASE 419B01 SOT363 VCC (4) Vin 1.0 k Q1 R2
CASE 31808 SOT23 Vout (3)
R1
6.8 V (1) 33 k GND (2)
R3 Q2 VENBL (5) R5 R4 Q4 R6
Vref (6) Iout (1)
MDC3105LT1
GND (2) and (3) MDC5001T1
INTERNAL CIRCUIT DIAGRAMS Table 54. Low Voltage Bias Stabilizer A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field effect transistors.
VCC (Volts) Device Type Marking Min Max ICC A Vref Volts Vref Volts
Case 419B01 SOT363

MDC5001T1
E6 1.8 10 200 2.1 50
Table 55. Integrated Relay/Solenoid Driver Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts) Device Type Min Max Min Vin (Volts) Max Vsat (Volts) Iin (mA) IC(on) (mA)
Case 31808 SOT23

MDC3105LT1
2.0 5.5 2.0 5.5 0.4 2.5 250
Selector Guide 138
Section 2
Plastic-Encapsulated Transistors
In Brief . . .
Motorolas plastic transistors and diodes encompass hundreds of devices spanning the gamut from general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for the most demanding applications. The popular TO-92, 1-Watt TO-92 and TO-116 combine proven reliability performance and economy for through-the-hole manufacturing, while the SOT-23, SC-59, SC-70/SOT-323, SC90/SOT416, SOT-223, and SO-16 offer the same solutions for surface mount manufacturing. As an additional service to our customers Motorola will, upon request, supply many of these devices in tape and reel for automatic insertion. Contact your Motorola representative for ordering information. This section contains both single and multiple plasticencapsulated transistors. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.
CASE 29-04 (TO-226AA) TO-92
CASE 29-05 (TO-226AE) 1 WATT TO-92
3 3 1 2 2 1 1 2 4
CASE 318-08 (TO-236AB) SOT-23
CASE 318D-04 SC-59
CASE 318E-04 (TO-261AA) SOT-223
3 2
1 2
CASE 419-02 SC-70/SOT-323
CASE 463-01 SC-90/SOT-416
16 14 1 1
CASE 646-06 (TO-116)
CASE 751B-05 SO-16

Not to Scale
21
EMBOSSED TAPE AND REEL

SOT-23, SC-59, SC-70/SOT-323, SC90/SOT416, SOT-223 and SO-16 packages are available only in Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59, SC-70/SOT-323, SOT-223 and SO-16 packages. (See Section 6 on Packaging for additional information). SOT-23: available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 12 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/1000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/4000 unit reel. available in 16 mm Tape and Reel Add an R1 suffix to the device title to order the 7 inch/500 unit reel. Add an R2 suffix to the device title to order the 13 inch/2500 unit reel.
SC-59:
SC-70/ SOT-323:
SOT-223:
SO-16:
RADIAL TAPE IN FAN FOLD BOX OR REEL

TO-92 packages are available in both bulk shipments and in Radial Tape in Fan Fold Boxes or Reels. Fan Fold Boxes and Radial Tape Reel are the best methods for capturing devices for automatic insertion in printed circuit boards. TO-92: available in Fan Fold Box Add an RLR suffix and the appropriate Style code* to the device title to order the Fan Fold box. available in 365 mm Radial Tape Reel Add an RLR suffix and the appropriate Style code* to the device title to order the Radial Tape Reel. *Refer to Section 6 on Packaging for Style code characters and additional information on ordering *requirements.
DEVICE MARKINGS/DATE CODE CHARACTERS

SOT-23, SC-59, SC-70/SOT-323, and the SC90/SOT416 packages have a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.
ABC D
The D represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
22
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistors

NPN Silicon
2N3903 2N3904*
*Motorola Preferred Device
COLLECTOR 3 2 BASE 1 EMITTER
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
23
2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain(1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 15 30 150 300 Vdc
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3903 2N3904 2N3903 2N3904 hre 2N3903 2N3904 hfe 2N3903 2N3904 hoe NF 6.0 5.0 50 100 1.0 200 400 40 0.1 0.5 5.0 8.0 fT 2N3903 2N3904 Cobo Cibo hie 1.0 1.0 8.0 10 X 10 4 250 300 4.0 8.0 pF pF k MHz
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf 35 35 175 200 50 ns ns ns ns
v 300 ms; Duty Cycle v 2.0%.
24
2N3903 2N3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10
1.0 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
25
2N3903 2N3904
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 5. Turn On Time

500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200
Figure 6. Rise Time
ts = ts 1/8 tf IB1 = IB2 t f , FALL TIME (ns)
VCC = 40 V IB1 = IB2 IC/IB = 20
100 70 50 30 20 10 7 5 IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 IC = 100 mA IC = 1.0 mA
SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA
IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
26
2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50
h fe , CURRENT GAIN
200
20 10 5
100 70 50
2 1
30
0.1
0.2
0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
0.1
0.2
5.0
10
Figure 11. Current Gain

20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 10 7.0 5.0 3.0 2.0
Figure 12. Output Admittance
2.0 1.0 0.5
h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 5.0 10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS

2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
h FE, DC CURRENT GAIN (NORMALIZED)
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
Figure 15. DC Current Gain
27
2N3903 2N3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0 0.5 +25C TO +125C
qVC FOR VCE(sat)

0 0.5 55C TO +25C 1.0 +25C TO +125C 1.5 2.0 55C TO +25C
qVB FOR VBE(sat)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
Figure 17. ON Voltages
Figure 18. Temperature Coefficients
28
MOTOROLA

PNP Silicon
2N3905 2N3906*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 60C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 40 5.0 200 625 5.0 250 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW Watts mW/C C
CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS(1)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 2
29
2N3905 2N3906
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 30 60 40 80 50 100 30 60 15 30 150 300 Vdc
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) 2N3905 2N3906 hre 2N3905 2N3906 hfe 2N3905 2N3906 hoe 2N3905 2N3906 NF 2N3905 2N3906 5.0 4.0 1.0 3.0 40 60 dB 50 100 200 400 0.1 0.1 5.0 10 fT 2N3905 2N3906 Cobo Cibo hie 0.5 2.0 8.0 12 X 10 4 200 250 4.5 10.0 pF pF k MHz
mmhos
Delay Time Rise Time Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc 3 0 Vdc mAdc, IB1 = IB2 = 1.0 mAd ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) 2N3905 2N3906 2N3905 2N3906 td tr ts tf 35 35 200 225 60 75 ns ns ns
Fall Time
ns
1. Pulse Test: Pulse Width
210
2N3905 2N3906
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 CS < 4 pF* 10 k < 1 ns 275 3V
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10
QT QA
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
200
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200
VCC = 40 V IB1 = IB2 IC/IB = 20
t f , FALL TIME (ns)
100 70 50 30 20 10 7 5 IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 6. Fall Time
211
2N3905 2N3906
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA
NF, NOISE FIGURE (dB)
4.0
3.0
2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100
1.0
0 0.1
0.1
0.2
0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS)
40
100
Figure 7.
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20
h fe , DC CURRENT GAIN
200
100 70 50
10 7
30
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
5.0 7.0 10

h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2
5.0 7.0 10
212
2N3905 2N3906
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200

0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2 0.3 0.5 IB, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10

1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 0.5 +25C TO +125C 1.0 55C TO +25C 1.5 2.0
q V , TEMPERATURE COEFFICIENTS (mV/ C)
qVC FOR VCE(sat)
+25C TO +125C
0.6
55C TO +25C
0.4 VCE(sat) @ IC/IB = 10
0.2
qVB FOR VBE(sat)
1.0
2.0
50 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100
200
20
40
60 80 100 120 140 IC, COLLECTOR CURRENT (mA)
160
180 200
213
MOTOROLA

NPN Silicon
2N4123 2N4124
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N4123 30 40 5.0 200 625 5.0 1.5 12 55 to +150 2N4124 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO IEBO 40 30 5.0 50 50 Vdc nAdc nAdc 30 25 Vdc Vdc
214
2N4123 2N4124
ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) 50 120 25 60 150 360 0.3 0.95 Vdc Vdc
(IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc)

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) CollectorBase Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k ohm, f = 1.0 kHz) Current Gain High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) 2N4123 2N4124 |hfe| 2N4123 2N4124 2N4123 2N4124 NF 2N4123 2N4124 6.0 5.0 2.5 3.0 50 120 200 480 dB fT 2N4123 2N4124 Cibo Ccb hfe 50 120 200 480 250 300 8.0 4.0 pF pF MHz
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
10 7.0 CAPACITANCE (pF) 5.0 Cibo TIME (ns)
200 100 70 50 30 20 tf tr td ts
3.0 2.0
Cobo 10.0 7.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS)
20 30 40
5.0
Figure 2. Switching Times
215
2N4123 2N4124
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 1 mA IC = 0.5 mA IC = 50 mA IC = 100 mA
SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) 20 40 100
0.2
0.4
1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k)
40
100
Figure 3. Frequency Variations
Figure 4. Source Resistance
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5
hfe , CURRENT GAIN
200
100 70 50
2 1
30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
5.0
10

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 10 hie , INPUT IMPEDANCE (k ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0
1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
216
2N4123 2N4124
STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/C)
1.2
1.0 0.5 0 0.5 1.0 1.5 2.0 55C to +25C +25C to +125C +25C to +125C
qVC for VCE(sat)

55C to +25C
qVB for VBE(sat)
20
40
60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA)
180 200
Figure 11. On Voltages
217
MOTOROLA
Amplifier Transistor
PNP Silicon
2N4125
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 30 4.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 2
218
2N4125
ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 50 25 VCE(sat) VBE(sat) 0.95 0.4 Vdc 150 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Current Gain High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. fT 200 Cibo Ccb hfe 50 |hfe| 2.0 NF 5.0 dB 200 4.5 10 pF pF MHz
10 7.0
200 100 ts td tr tf
CAPACITANCE (pF)
5.0
Cobo Cibo TIME (ns)
70 50 30 20
3.0 2.0
10.0 7.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 REVERSE BIAS (VOLTS) 10 20 30 50 5.0 1.0
VCC = 3.0 V IC/IB = 10 VBE(off) = 0.5 V 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200
Figure 2. Switching Times
219
2N4125
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 5.0 Vdc, TA = 25C Bandwidth = 1.0 Hz
5.0 4.0 NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 1 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2 k IC = 50 mA 2.0 12 f = 1 kHz 10 IC = 0.5 mA 8.0 6.0 4.0 2.0 0 0.1 IC = 50 mA IC = 100 mA IC = 1 mA
3.0
1.0
SOURCE RESISTANCE = 2 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100
0 0.1
0.2
0.4
1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k)
40
100
Figure 3. Frequency Variations
Figure 4. Source Resistance
h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25C
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 70 50 30 20
200 hfe , CURRENT GAIN
100 70 50
10 7.0 5.0 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 10 h ie , INPUT IMPEDANCE (k ) 5.0 2.0 1.0 0.5 10 7.0 5.0 3.0 2.0
1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
220
2N4125
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
1.0 TJ = 25C 0.8 IC = 1 mA 0.6 10 mA 30 mA 100 mA
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C 0.8 V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10 VBE @ VCE = 1 V
1.0
1.0 0.5 0 0.5 +25C to +125C 1.0 1.5 2.0
qVC for VCE(sat)
+25C to +125C 55C to +25C
0.6
0.4
qVS for VBE(sat)
55C to +25C
0.2
VCE(sat) @ IC/IB = 10
0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200
20
40
180 200
221
MOTOROLA
General Purpose Transistor

NPN Silicon
2N4264
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 15 30 6.0 200 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) (VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100C) Collector Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) V(BR)CEO 15 V(BR)CBO 30 V(BR)EBO 6.0 IBEV ICEX 100 0.1 10 nAdc Adc Vdc Vdc Vdc
REV 2
222
2N4264
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)(1) (IC = 200 mAdc, VCE = 1.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) hFE 25 40 20 40 30 20 VCE(sat) VBE(sat) 0.65 0.75 0.8 0.95 0.22 0.35 Vdc 160 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0) fT Cibo Cobo 300 8.0 4.0 MHz pF pF
Delay Time Rise Time Storage Time Fall Time TurnOn Time TurnOff Time Storage Time Total Control Charge ( (VCC = 10 Vdc, VEB(off) = 2.0 Vdc, IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C) VCC = 10 Vdc, (IC = 10 mAdc, for ts) (IC = 100 mA for tf) (IB1 = 10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C) (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A) (VCC = 10 Vdc, IC = 10 mA, IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B) (VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc) (Fig. 3, Test Condition A) td tr ts tf ton toff ts QT 8.0 15 20 15 25 35 20 80 ns ns ns ns ns ns ns pC
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Figure 1. Switching Time Equivalent Test Circuit

Test Condition IC mA A B C 10 10 100 VCC V 3 10 10 RS RC CS(max) VBE(off) pF 4 4 12 V 1.5 2.0 V1 V V2 V V3 V V1 0 VEB(off) < 2 ns ton t1 toff t1 VCC RC RB CS < 2 ns
3300 270 560 960 560 96
10.55 4.15 10.70 4.65 6.55 6.35 4.65 6.55
V3 0 V2
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
223
2N4264
CURRENT GAIN CHARACTERISTICS
100 70 h FE, DC CURRENT GAIN 50 TJ = 125C 25C 30 20 15C 55C 2N4264 VCE = 1 V
10 1.0
2.0
3.0
5.0
7.0
10 20 IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
Figure 2. Minimum Current Gain
270 t1 +10 V V 0 <1 ns 9.2 k PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2% 3V 8 pF CS < 4 pF C COPT TIME C < COPT C=0
Figure 3. QT Test Circuit NOTE 1

When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or stored in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collectorbase feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor on to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE
Figure 4. TurnOff Waveform
If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turnoff time of the transistor. Figure 3 shows the test circuit and Figure 4 the turnoff waveform. Given QT from Figure 13, the external C for worstcase turnoff in any circuit is: C = QT/V, where V is defined in Figure 3.
224
2N4264
ON CONDITION CHARACTERISTICS
1.0 VCE, MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS) 2N4264 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA
0.8
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0 3.0 IB, BASE CURRENT (mA)
5.0
7.0
10
20
30
50
Vsat , SATURATION VOLTAGE (VOLTS)
1.0 0.8 0.6 0.4 0.2 0
IC/IB = 10 TJ = 25C
1.2 MAX VBE(sat) MIN VBE(sat)
1.0 0.5 0 0.5 (25C to 125C) 1.0 1.5 2.0
qVC for VCE(sat)
(25C to 125C) ( 55C to 25C)
MAX VCE(sat)
qVB for VBE
( 55C to 25C)
1.0
2.0 3.0
50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
200
40
80 120 160 IC, COLLECTOR CURRENT (mA)
200
Figure 6. Saturation Voltage Limits
225
2N4264
DYNAMIC CHARACTERISTICS
200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25C TJ = 125C
2V
Figure 8. Delay Time
Figure 9. Rise Time
50 TJ = 25C TJ = 125C t f , FALL TIME (ns) IC/IB = 10
200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25C TJ = 125C
t s , STORAGE TIME (ns)
30 20
IC/IB = 20
10 7.0 5.0 ts
^ ts 1/8 tf
IB1 = IB2
Figure 11. Fall Time
10 MAX TYP 7.0 CAPACITANCE (pF) Cibo Q, CHARGE (pC)
1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25C TJ = 125C
5.0
3.0
Cobo
2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10
20
Figure 12. Junction Capacitance
Figure 13. Maximum Charge Data
226
MOTOROLA

NPN Silicon
2N4400 2N4401*
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
REV 1
227
2N4400 2N4401
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE(sat) 20 20 40 40 80 50 100 20 40 0.75 150 300 0.4 0.75 0.95 1.2 Vdc Vdc
(IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4400 2N4401 hoe 2N4400 2N4401 hre hfe 20 40 1.0 250 500 30 mhos fT 2N4400 2N4401 Ccb Ceb hie 0.5 1.0 0.1 7.5 15 8.0 X 104 200 250 6.5 30 pF pF k ohms MHz
Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 20 225 30 ns ns ns ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V +16 V 0 2.0 V 1.0 to 100 s, DUTY CYCLE 2.0% 1.0 k < 2.0 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1.0 k CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. TurnOn Time
Figure 2. TurnOff Time
228
2N4400 2N4401
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT
VCC = 30 V IC/IB = 10
QA
Figure 3. Capacitances
100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10
100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 6. Rise and Fall Times
300 200 t s, STORAGE TIME (ns) ts = ts 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)
100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2
100 70 50
10 7.0
30
5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
229
2N4400 2N4401
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA
8.0 NF, NOISE FIGURE (dB)
6.0
6.0
4.0
4.0
2.0 0 0.01 0.02 0.05 0.1 0.2
2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between selected from both the 2N4400 and 2N4401 lines, and the hfe and other h parameters for this series of transistors. To same units were used to develop the correspondingly numobtain these curves, a highgain and a lowgain unit were bered curves on each graph.
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
20 k 10 k 5.0 k
100 70 50 30 20 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
2.0 k 1.0 k 500
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10

10 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50
2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
20 10 5.0 2.0 1.0 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Figure 13. Voltage Feedback Ratio 230
Figure 14. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N4400 2N4401
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 25C 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0 TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0 0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
2.0
3.0
5.0 7.0
10
20
30
50
1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)
+ 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2
qVC for VCE(sat)
0.6
VBE @ VCE = 10 V
0.4
0.2
qVB for VBE

0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500
0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500
231
MOTOROLA

PNP Silicon
2N4402 2N4403*
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
232
2N4402 2N4403
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VCE(sat) VBE(sat) 0.75 0.95 1.3 0.4 0.75 Vdc 30 30 60 50 100 50 100 20 150 300 Vdc
(IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(1) (IC = 500 mAdc, VCE = 2.0 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4402 2N4403 hoe 2N4402 2N4403 hre hfe 30 60 1.0 250 500 100 mhos fT 2N4402 2N4403 Ccb Ceb hie 750 1.5 k 0.1 7.5 k 15 k 8.0 X 104 150 200 8.5 30 pF pF ohms MHz
Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) td tr ts tf 15 20 225 30 ns ns ns ns
SWITCHING TIME EQUIVALENT TEST CIRCUIT

30 V < 2 ns +2 V 0 1.0 k 16 V 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 1.0 k 16 V 1.0 to 100 s, DUTY CYCLE = 2% CS* < 10 pF < 20 ns 30 V 200
+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. TurnOn Time Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 2. TurnOff Time 233
2N4402 2N4403
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
100 70 50 30 20 VCC = 30 V IC/IB = 10
Figure 6. Rise Time
200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts 1/8 tf 30 20 IC/IB = 20
10
20
30
50
70
100
200
300
500
234
2N4402 2N4403
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8
IC = 50 A 100 A 500 A 1.0 mA
RS = OPTIMUM SOURCE RESISTANCE
0 0.01 0.02 0.05 0.1 0.2
0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between selected from both the 2N4402 and 2N4403 lines, and the hfe and other h parameters for this series of transistors. To same units were used to develop the correspondingly obtain these curves, a highgain and a lowgain unit were numbered curves on each graph.
1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2
100 70 50
IC, COLLECTOR CURRENT (mAdc)

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10
Figure 12. Voltage Feedback Ratio Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 13. Output Admittance 235
2N4402 2N4403
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 0.8
0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA
0.2
0 0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
1.0 0.8 VOLTAGE (VOLTS)
TJ = 25C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
qVC for VCE(sat)
0.6
VBE(sat) @ VCE = 10 V
0.4
0.2
qVS for VBE

0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
236
MOTOROLA
NPN Silicon
2N4410
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 500 Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO IEBO 0.01 1.0 0.1 Adc 80 120 120 5.0 Vdc Vdc Vdc Vdc Adc
REV 1
237
2N4410
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 60 60 VCE(sat) VBE(sat) VBE(on) 400 0.2 0.8 0.8 Vdc Vdc Vdc

Current Gain Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) 2. fT = |hfe| ftest. 500 300 200 h FE, DC CURRENT GAIN 100 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V fT Ccb Ceb 60 300 12 50 MHz pF pF
0.2
0.3
0.5
0.7
1.0
3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA)
10
20
30
50
70
100
VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
238
2N4410
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 101 102 103 104 105 0.4 TJ = 125C
IC = ICES
75C REVERSE 25C FORWARD
0.3
0.2 0 0.1 0.2 0.3 0.4 0.1 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
Figure 3. Collector CutOff Region
1.0
V, TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 55C to +135C
0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6
qVC for VCE(sat)
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100
qVB for VBE(sat)
100 70 50 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F C, CAPACITANCE (pF) VBB 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
Values Shown are for IC @ 10 mA
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
Figure 6. Switching Time Test Circuit
239
2N4410
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
1.0
20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)
50
100
200
20 30 50 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA)
100
200
240
MOTOROLA
PNP Silicon
2N5087
Motorola Preferred Device
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO 50 50 50 50 Vdc Vdc nAdc nAdc
(Replaces 2N5086/D)
241
2N5087
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 250 250 VCE(sat) VBE(on) 800 0.3 0.85 Vdc Vdc

Current Gain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 3.0 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT Ccb hfe 250 NF 2.0 2.0 900 dB 40 4.0 MHz pF
242
2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A)
BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A) 2 2 1 2 + 20 log10 en2 ) 4KTRS ) In RS 4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
Figure 5. Wideband Motorola SmallSignal Transistors, FETs and Diodes Device Data 243
2N5087
400
TJ = 125C 25C
h FE, DC CURRENT GAIN
200
55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA)
100
TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 60
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40
Figure 8. Collector Characteristics
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
qVB for VBE

0.2
55C to 25C
2.4 0.1
0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
50
100
244
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
tf
2.0
3.0
20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA)
50 70
100
2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70 100

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF)
10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 13. CurrentGain Bandwidth Product
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C
245
2N5087
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
Figure 17. Thermal Response
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C
1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10 s
1.0 s
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
40
Figure 18. ActiveRegion Safe Operating Area
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 40 20 ICEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
ICBO AND ICEX @ VBE(off) = 3.0 V
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C)
Figure 19. Typical Collector Leakage Current
246
MOTOROLA
Amplifier Transistors
NPN Silicon
2N5088 2N5089
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5088 30 35 3.0 50 625 5.0 1.5 12 55 to +150 2N5089 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO 50 100 50 50 nAdc 35 30 nAdc 30 25 Vdc Vdc
247
2N5088 2N5089
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 300 400 350 450 300 400 900 1200 0.5 0.8 Vdc Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(2) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2)

Current Gain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2N5088 2N5089 NF 2N5088 2N5089 3.0 2.0 fT Ccb Ceb hfe 350 450 1400 1800 dB 50 4.0 10 MHz pF pF
RS
in en
IDEAL TRANSISTOR
Figure 1. Transistor Noise Model
248
2N5088 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
100 kHz 5.0 10
Figure 2. Effects of Frequency

10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS 0 20 10 A 50 100 200 3.0 mA 1.0 mA 300 A 100 A 30 A 0 10 20 20 16 NF, NOISE FIGURE (dB)
Figure 3. Effects of Collector Current
BANDWIDTH = 1.0 Hz IC = 10 mA
BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 100 A 4.0 10 A IC = 1.0 mA
8.0
500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz)
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
Figure 4. Noise Current 100 Hz NOISE DATA

300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 A 3.0 mA 1.0 mA 300 A 30 A 10 A IC = 10 mA 16 NF, NOISE FIGURE (dB)
Figure 5. Wideband Noise Figure
IC = 10 mA
3.0 mA 1.0 mA 300 A
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
Figure 6. Total Noise Voltage
Figure 7. Noise Figure
249
2N5088 2N5089
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
VBE @ VCE = 5.0 V
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
250
MOTOROLA
NPN Silicon
2N5209 2N5210
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 50 50 Vdc Vdc nAdc nAdc
251
2N5209 2N5210
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 100 200 150 250 150 250 300 600 0.7 0.85 Vdc Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)

Current Gain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 Adc, VCE = 5.0 Vdc, RS = 22 k, f = 1.0 kHz) (IC = 20 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5209 2N5210 NF 2N5209 2N5210 2N5209 2N5210 3.0 2.0 4.0 3.0 fT Ccb hfe 150 250 600 900 dB 30 4.0 MHz pF
RS
in en
IDEAL TRANSISTOR
252
2N5209 2N5210
10 7.0 5.0
100 kHz 5.0 10

8.0

IC = 10 mA
3.0 mA 1.0 mA 300 A
12
253
2N5209 2N5210
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
0.4 0.8
0.6
VBE @ VCE = 5.0 V
1.2
0.4
1.6
TJ = 25C to 125C
20
50 100
500
300 200
254
MOTOROLA
PNP Silicon
2N5400 2N5401*

1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 120 130 5.0 600 625 5.0 1.5 12 55 to +150 2N5401 150 160 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO 2N5400 2N5401 2N5400 2N5401 IEBO 100 50 100 50 50 130 160 5.0 120 150
Vdc
Vdc
Vdc
nAdc Adc nAdc
255
2N5400 2N5401
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5400 2N5401 2N5400 2N5401 2N5400 2N5401 VCE(sat) VBE(sat) 1.0 1.0 0.2 0.5 Vdc 30 50 40 60 40 50 180 240 Vdc
(IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5400 2N5401 NF fT 2N5400 2N5401 Cobo hfe 30 40 200 200 8.0 dB 100 100 400 300 6.0 pF MHz
256
2N5400 2N5401
200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 55C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = 1.0 V VCE = 5.0 V 25C
103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 75C 101 102 103 0.3 REVERSE 25C FORWARD VCE = 30 V IC = ICES
0.2
0.6
0.7
257
2N5400 2N5401
V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = 55C to 135C
10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout
C, CAPACITANCE (pF)
VBB + 8.8 V
VCC 30 V
100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
0.3
2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS)
10
20
1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20
2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V
td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50
10 0.2 0.3 0.5
258
MOTOROLA
NPN Silicon
2N5550 2N5551*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 55 to +150 2N5551 160 180 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO 2N5550 2N5551 2N5550 2N5551 IEBO 100 50 100 50 50 160 180 6.0 140 160
Vdc
Vdc
Vdc
nAdc Adc nAdc
259
2N5550 2N5551
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 1.0 1.2 1.0 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 250 250 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5550 2N5551 2N5550 2N5551 hfe NF 10 8.0 fT Cobo Cibo 50 30 20 200 dB 100 300 6.0 MHz pF pF
260
2N5550 2N5551
500 300 200 h FE, DC CURRENT GAIN 100 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
261
2N5550 2N5551
IC = ICES
0.3
0.5
0.6
1.0
V, TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 55C to +135C
qVC for VCE(sat)
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100
qVB for VBE(sat)
TJ = 25C
Cobo
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
262
2N5550 2N5551
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
1.0
50
100
200
100
200
263
MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2
2N6426* 2N6427
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 12 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 10 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 40 40 12 1.0 50 50 Vdc Vdc Vdc
mAdc
nAdc nAdc
264
2N6426 2N6427
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE 2N6426 2N6427 2N6426 2N6427 2N6426 2N6427 VCE(sat) VBE(sat) VBE(on) 0.71 0.9 1.52 1.24 1.2 1.5 2.0 1.75 Vdc Vdc 20,000 10,000 30,000 20,000 20,000 14,000 200,000 100,000 300,000 200,000 200,000 140,000 Vdc
(IC = 500 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Current Gain High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Admittance (IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width 2N6426 2N6427 hfe 2N6426 2N6427 |hfe| 2N6426 2N6427 hoe NF 1.5 1.3 2.4 2.4 3.0 1000 10 20,000 10,000 Cobo Cibo hie 100 50 2000 1000 5.4 10 7.0 15 pF pF k
mmhos
dB

RS
in en
IDEAL TRANSISTOR
265
2N6426 2N6427
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 NF, NOISE FIGURE (dB)
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
10 20 50 100 200 RS, SOURCE RESISTANCE (k)
500
100 0
2.0
5.0
500
100 0
Figure 4. Total Wideband Noise Voltage
266
2N6426 2N6427
SMALLSIGNALCHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
0.2 0.5
1.0
2.0
0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
500
Figure 7. High Frequency Current Gain
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
RV, TEMPERATURE COEFFICIENTS (mV/C)
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
*APPLIES FOR IC/IB hFE/3.0 *RqVC FOR VCE(sat)
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
6.0 5.0 7.0 10
20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
267
2N6426 2N6427
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
PEAK PULSE POWER = PP
Figure 13. Active Region Safe Operating Area
Design Note: Use of Transient Thermal Resistance Data
268
MOTOROLA
High Voltage Transistors

COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
NPN 2N6515 2N6517 PNP 2N6519 2N6520

Voltage and current are negative for PNP transistors
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 55 to +150 mAdc mAdc mW mW/C Watts mW/C C
1 2 3
2N6515 250 250
2N6519 300 300
2N6517 2N6520 350 350
Unit Vdc Vdc Vdc
PD
TJ, Tstg

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 6.0 5.0 250 300 350 Vdc 250 300 350 Vdc Vdc
Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 )
Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
REV 1
269
NPN 2N6515 2N6517 PNP 2N6519 2N6520

OFF CHARACTERISTICS (Continued)

Collector Cutoff Current (VCB = 150 Vdc, IE = 0) (VCB = 200 Vdc, IE = 0) (VCB = 250 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ICBO 2N6515 2N6519 2N6517, 2N6520 IEBO 2N6515, 2N6517 2N6519, 2N6520 50 50 50 50 50 nAdc nAdc
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) VBE(sat) VBE(on) 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 300 270 200 220 200 200 Vdc
(IC = 10 mAdc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc)

Current Gain Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2N6515, 2N6517 2N6519, 2N6520 fT Ccb Ceb 80 100 40 200 6.0 MHz pF pF
TurnOn Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) TurnOff Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff 200 3.5 s s
270
NPN 2N6515 2N6517 PNP 2N6519 2N6520

NPN 2N6515
200 VCE = 10 V 200 TJ = 125C hFE, DC CURRENT GAIN VCE = 10 V
PNP 2N6519
TJ = 125C 25C
hFE, DC CURRENT GAIN
100 70
25C
100 70 50
55C
55C 50
30 20 1.0
30 20 1.0
2.0
3.0
5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70 100
50 70 100
2N6517
200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 55C 30 20 25C TJ = 125C hFE , DC CURRENT GAIN 100 70 200 VCE = 10 V
2N6520
TJ = 125C 25C 55C
50 30 20
10 1.0
2.0
3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50 70 100
10 1.0
50 70 100
2N6515, 2N6517
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
2N6519, 2N6520
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
30 20
10 1.0
2.0
50 70
100
10 1.0
50 70 100
271
NPN 2N6515 2N6517 PNP 2N6519 2N6520

NPN 2N6515, 2N6517
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 VCE(sat) @ IC/IB = 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 5.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
PNP 2N6519, 2N6520
2N6515, 2N6517
RV, TEMPERATURE COEFFICIENTS (mV/C) 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) 55C to 25C IC IB
2N6519, 2N6520
RV, TEMPERATURE COEFFICIENTS (mV/C) 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 RVC for VCE(sat) 55C to 125C RVB for VBE IC IB
2.5
+ 10
25C to 125C
+ 10
25C to 125C 55C to 25C
0.5 1.0 1.5 2.0 2.5 1.0
55C to 125C RVB for VBE
2.0
50
70
100
50 70 100
2N6515, 2N6517
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb C, CAPACITANCE (pF) TJ = 25C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2
2N6519, 2N6520
Ceb TJ = 25C
Ccb
Ccb
0.5
1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100 200
0.5 1.0 2.0 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS)
272
NPN 2N6515 2N6517 PNP 2N6519 2N6520

NPN 2N6515, 2N6517
1.0 k 700 500 300 200 tr 100 70 50 30 20 10 1.0 t, TIME (ns) t, TIME (ns) VCE(off) = 100 V IC/IB = 5.0 TJ = 25C 1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 tr
PNP 2N6519, 2N6520

td @ VBE(off) = 2.0 V VCE(off) = 100 V IC/IB = 5.0 TJ = 25C
td @ VBE(off) = 2.0 V
2.0
50
70 100
50 70 100
2N6515, 2N6517
10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 2.0 k ts ts 1.0 k 700 500 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 1.0 tf
2N6519, 2N6520
VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C
50 70 100
273
NPN 2N6515 2N6517 PNP 2N6519 2N6520

+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k
+10.8 V
20 k
50 SAMPLING SCOPE
APPROXIMATELY 1.35 V
(ADJUST FOR V(BE)off = 2.0 V)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 SINGLE PULSE
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
0.05
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6519 2N6517, 2N6520 500 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms
FIGURE A tP PP PP
t1 1/f DUTY CYCLE 1 + t1 f + ttP
2.0 5.0 10 20 50 100 200 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
274
MOTOROLA
PNP Silicon General Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT416/SC90 package which is designed for low power surface mount applications, where board space is at a premium. Reduces Board Space High hFE, 210 460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7inch/3000 Unit Tape and Reel
2SA1774
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
MAXIMUM RATINGS (TA = 25C)

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 6.0 100 Unit Vdc Vdc Vdc mAdc
1
CASE 46301, STYLE 1 SOT416/SC90
DEVICE MARKING
2SA1774 = F9
COLLECTOR 3
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C 1 BASE 2 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25C)

Characteristic CollectorBase Breakdown Voltage (IC = 50 Adc, IE = 0) CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) EmitterBase Breakdown Voltage (IE = 50 Adc, IE = 0) CollectorBase Cutoff Current (VCB = 30 Vdc, IE = 0) EmitterBase Cutoff Current (VEB = 5.0 Vdc, IB = 0) CollectorEmitter Saturation Voltage(2) (IC = 50 mAdc, IB = 5.0 mAdc) DC Current Gain(2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IE = 0 Adc, f = 1 MHz) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE 120 fT COB 140 3.5 pF 560 MHz 0.5 Min 60 50 6.0 Typ Max 0.5 0.5 Unit Vdc Vdc Vdc nA A Vdc
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 1
275
2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
1000 TA = 25C IC, COLLECTOR CURRENT (mA) 120 DC CURRENT GAIN TA = 75C 300 A 250 200 150 30 0 100 IB = 50 A 0 3 6 9 12 15 10 0.1 1 10 100 TA = 25C 100 TA = 25C VCE = 10 V
90
60
VCE, COLLECTOR VOLTAGE (V)
Figure 1. IC VCE
2 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1
0.5
TA = 25C VCE = 5 V
10
20
40
60
80
100
150 200

13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10
Figure 4. On Voltage
20 VCB (V)
30
40
276
MOTOROLA
Preliminary Information
NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC90 package which is designed for low power surface mount applications, where board space is at a premium. Reduces Board Space High hFE, 210 460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7-inch/3000 Unit Tape and Reel MAXIMUM RATINGS (TA = 25C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 5.0 100 Unit Vdc Vdc Vdc mAdc
2SC4617
NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
3 2 1
DEVICE MARKING
2SC4617 = B9
COLLECTOR 3

Characteristic Collector-Base Breakdown Voltage (IC = 50 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 50 Adc, IE = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage(2) (IC = 60 mAdc, IB = 5.0 mAdc) DC Current Gain(2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE 120 fT COB 180 2.0 560 MHz pF 0.4 Min 50 50 5.0 Typ Max 0.5 0.5 Unit Vdc Vdc Vdc A A Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
277
2SC4617
60 TA = 25C IC, COLLECTOR CURRENT (mA) 50 40 30 20 10 0 160 A 140 A DC CURRENT GAIN 120 A 100 A 80 A 60 A 40 A IB = 20 A 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 8 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) TA = 75C 1000 TA = 25C VCE = 10 V
TA = 25C 100
Figure 1. IC VCE
2 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1
0.5
TA = 25C VCE = 5 V
10
20
40
60
80
100
150 200

20 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 1
Cib, INPUT CAPACITANCE (pF)
18
16
14
12
10
2 VEB (V)
10
20 VCB (V)
30
40
278
MOTOROLA

NPN Silicon
BC182,A,B BC183 BC184
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC182 50 60 BC183 30 45 6.0 100 350 2.8 1.0 8.0 55 to +150 BC184 30 45 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO 0.2 0.2 0.2 15 15 15 15 nA 60 45 45 6.0 V nA 50 30 30 V V
Collector Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) EmitterBase Leakage Current (VEB = 4.0 V, IC = 0)
279
BC182,A,B BC183 BC184

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC182 BC183 BC184 BC182 BC183 BC184 BC182 BC183 BC184 VCE(sat) VBE(sat) VBE(on) 0.55 0.5 0.62 0.83 0.7 0.07 0.2 0.25 0.6 1.2 V V 40 40 100 120 120 250 80 80 130 500 800 800 V
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
Collector Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) BaseEmitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1)
Current Gain Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC182 BC183 BC184 BC182 BC183 BC184 Cob Cib hfe BC182 BC183 BC184 BC182A BC182B NF 125 125 240 125 240 500 900 900 260 500 dB 150 150 150 100 120 140 200 240 280 8.0 5.0 pF pF MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz)
BC184 BC182 BC183 BC184
2.0 2.0 2.0 2.0
4.0 10 10 4.0
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
280
BC182,A,B BC183 BC184
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
Figure 1. Normalized DC Current Gain

Figure 2. Saturation and On Voltages
400 300 200 C, CAPACITANCE (pF)
10 7.0 5.0 Cib TA = 25C
100 80 60 40 30 20 0.5 0.7 1.0
VCE = 10 V TA = 25C
3.0 Cob 2.0
2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
30
50
1.0 0.4
0.6 0.8 1.0
2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
r b, BASE SPREADING RESISTANCE (OHMS)
170 160
150 VCE = 10 V f = 1.0 kHz TA = 25C
140
130
120 0.1
0.2
0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 5. Base Spreading Resistance
281
MOTOROLA

PNP Silicon
BC212,B BC213 BC214
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC212 50 60 BC213 30 45 5.0 100 350 2.8 1.0 8.0 55 to +150 BC214 30 45 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

Characteristic Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) CollectorEmitter Leakage Current (VCB = 30 V) EmitterBase Leakage Current (VEB = 4.0 V, IC = 0) BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 BC212 BC213 BC214 Symbol V(BR)CEO Min 50 30 30 60 45 45 5 5 5 Typ Max 15 15 15 15 15 15 Unit Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
ICBO
nAdc
IEBO
nAdc
282
BC212,B BC213 BC214

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BC212 BC213 BC214 BC212 BC213 BC214 BC212, BC214 BC213 VCE(sat) VBE(sat) VBE(on) 0.6 0.10 0.25 1.0 0.62 0.6 1.4 0.72 Vdc Vdc 40 40 100 60 80 140 120 140 600 Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc)(1) Base Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT BC212 BC214 BC213 Cob NF BC214 BC212, BC213 hfe BC212 BC213 BC214 BC212B 60 80 140 200 400 2 10 280 320 360 6.0 pF dB MHz
CommonBase Output Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k , f = 1.0 kHz) (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
283
BC212,B BC213 BC214
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
0.3 0.2 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc)
0 0.1 0.2

400 300 200 C, CAPACITANCE (pF) 150 100 80 60 40 30 20 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 VCE = 10 V TA = 25C
10 Cib 7.0 5.0 TA = 25C
3.0 Cob 2.0
1.0 0.4 0.6
1.0
2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS)
20 30 40
0.5 0.3
VCE = 10 V f = 1.0 kHz TA = 25C
1.0 hob, OUTPUT ADMITTANCE (OHMS)
150 140
130
VCE = 10 V f = 1.0 kHz TA = 25C
0.1 0.05 0.03
120
110
0.01 0.1
0.2
0.5 1.0 2.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
100 0.1
0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
284
MOTOROLA

NPN Silicon
BC237,A,B,C BC238B,C BC239,C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 55 to +150 BC239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 0.2 0.2 0.2 0.2 0.2 0.2 15 15 15 4.0 4.0 4.0 A V
V(BR)EBO
ICES nA
(VCE = 50 V, VBE = 0) (VCE = 30 V, VBE = 0) TA = 125C
(VCE = 50 V, VBE = 0) TA = 125C
REV 1
285

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC237A BC237B/238B BC237C/238C/239C BC237 BC239 BC237A BC237B/238B BC237C/238C/239C BC237A BC237B/238B BC237C/238C/239C VCE(sat) BC237/BC238/BC239 BC237/BC239 BC238 VBE(sat) VBE(on) 0.55 0.5 0.62 0.83 0.7 0.6 0.83 1.05 V 0.07 0.2 0.2 0.6 0.8 V 120 120 120 200 380 90 150 270 170 290 500 120 180 300 800 800 220 460 800 V
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
Collector Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) BaseEmitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)
Current Gain Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC237 BC238 BC239 BC237 BC238 BC239 Cobo Cibo NF BC239 (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) BC237 BC238 BC239 2.0 2.0 2.0 2.0 4.0 10 10 4.0 150 150 150 100 120 140 200 240 280 8.0 4.5 pF pF dB MHz
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
CollectorBase Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz)
286
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

10 7.0 5.0 Cib TA = 25C
100 80 60 40 30 20 0.5 0.7 1.0
VCE = 10 V TA = 25C
3.0 Cob 2.0
30
50
1.0 0.4
0.6 0.8 1.0
20
40
170 160
150 VCE = 10 V f = 1.0 kHz TA = 25C
140
130
120 0.1
0.2
0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
287
MOTOROLA
PNP Silicon
BC307 BC307B BC307C BC308C
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC307, B, C 45 50 5.0 100 350 2.8 1.0 8.0 55 to +150 BC308C 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) CollectorEmitter Leakage Current (VCES = 50 V, VBE = 0) (VCES = 30 V, VBE = 0) (VCES = 50 V, VBE = 0) TA = 125C (VCES = 30 V, VBE = 0) TA = 125C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C V(BR)CEO V(BR)EBO ICES 0.2 0.2 0.2 0.2 15 15 4.0 4.0 nAdc A 45 25 5.0 5.0 Vdc Vdc
REV 1
288

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BC307B BC307C/308C BC307 BC307B/308B BC307C/308C BC307B BC307C/308C VCE(sat) VBE(sat) VBE(on) 0.55 0.7 1.0 0.62 0.7 Vdc 0.10 0.30 0.25 0.3 0.6 Vdc 120 200 420 150 270 290 500 180 300 800 460 800 Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see Note 1) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Common Base Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) fT BC307,B,C BC308C Ccbo NF BC307,B,C 2.0 10 280 320 6.0 pF dB MHz
BC308C
2.0
10
1. IC = 10 mAdc on the constant base current characteristic, which yields the point IC = 11 mAdc, VCE = 1.0 V.
289

TYPICAL CHARACTERISTICS
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc) 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
0.3

400 300 200 C, CAPACITANCE (pF) 150 100 80 60 40 30 20 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 VCE = 10 V TA = 25C
10 Cib 7.0 5.0 TA = 25C
3.0 Cob 2.0
1.0 0.4 0.6
1.0
20 30 40
0.5 0.3
VCE = 10 V f = 1.0 kHz TA = 25C
1.0 hob, OUTPUT ADMITTANCE (OHMS)
150 140
130
VCE = 10 V f = 1.0 kHz TA = 25C
0.1 0.05 0.03
120
110
0.01 0.1
0.2
5.0
10
100 0.1
0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
290
MOTOROLA

PNP Silicon
BC327,-16,-25 BC328,-16,-25
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC327 45 50 5.0 800 625 5.0 1.5 12 55 to +150 BC328 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 A, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) BC327 BC328 ICES BC327 BC328 IEBO 100 100 100 nAdc V(BR)CEO BC327 BC328 V(BR)CES BC327 BC328 V(BR)EBO ICBO 100 100 nAdc 50 30 5.0 Vdc nAdc 45 25 Vdc Vdc
291
BC327,-16,-25 BC328,-16,-25

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC327/BC328 BC32716/BC32816 BC32725/BC32825 VBE(on) VCE(sat) 100 100 160 40 630 250 400 1.2 0.7 Vdc Vdc
(IC = 300 mA, VCE = 1.0 V) BaseEmitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Cob fT 11 260 pF MHz
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001
D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) JC(t) 10 20 50 100
0.002
0.005
0.01
1000 IC, COLLECTOR CURRENT (mA)
1.0 s
1.0 ms
1000 TJ = 135C hFE, DC CURRENT GAIN 100 s VCE = 1.0 V TA = 25C
dc TC = 25C 100 dc TA = 25C
100
10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOREMITTER VOLTAGE
100
10 0.1
1.0 10 100 IC, COLLECTOR CURRENT (mA)
1000
292
BC327,-16,-25 BC328,-16,-25
1.0 TJ = 25C 0.8 IC = 500 mA V, VOLTAGE (VOLTS)
1.0 TA = 25C 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0.6
0.6
0.4 IC = 300 mA 0.2 0 0.01 IC = 10 mA 0.1 1.0 10 IB, BASE CURRENT (mA) 100 IC = 100 mA
0.4
0.2 VCE(sat) @ IC/IB = 10 0 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000
Figure 4. Saturation Region
+1.0 VC for VCE(sat) 0
100
C, CAPACITANCE (pF)
Cib 10
1.0
2.0
VB for VBE
Cob
1.0
10 100 IC, COLLECTOR CURRENT
1000
1.0 0.1
1.0 10 VR, REVERSE VOLTAGE (VOLTS)
100
293
MOTOROLA

NPN Silicon
BC337,-16,-25,-40 BC338,-16,-25,-40
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 A, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) BC337 BC338 ICES BC337 BC338 IEBO 100 100 100 nAdc V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 V(BR)EBO ICBO 100 100 nAdc 50 30 5.0 Vdc nAdc 45 25 Vdc Vdc
294
BC337,-16,-25,-40 BC338,-16,-25,-40

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337/BC338 BC33716/BC33816 BC33725/BC33825 BC33740/BC33840 VBE(on) VCE(sat) 100 100 160 250 60 630 250 400 630 1.2 0.7 Vdc Vdc
(IC = 300 mA, VCE = 1.0 V) BaseEmitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Cob fT 15 210 pF MHz
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001
D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) JC(t) 10 20 50 100
0.002
0.005
0.01
1.0 s
1.0 ms
1000 TJ = 135C hFE, DC CURRENT GAIN 100 s VCE = 1 V TJ = 25C
dc TC = 25C 100 dc TA = 25C
100
10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOREMITTER VOLTAGE 100
10 0.1
1.0 10 100 IC, COLLECTOR CURRENT (AMP)
1000
295
BC337,-16,-25,-40 BC338,-16,-25,-40
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS)
1.0 TA = 25C 0.8 VBE(on) @ VCE = 1 V 0.6 VBE(sat) @ IC/IB = 10
0.6 IC = 10 mA 100 mA 300 mA 500 mA
0.4
0.4
0.2 0 0.01
0.2 VCE(sat) @ IC/IB = 10 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
+1 VC for VCE(sat) 0 C, CAPACITANCE (pF)
100
Cib 10
VB for VBE
Cob
1000
1 0.1
100
296
MOTOROLA
COLLECTOR 2 3 BASE NPN 1 EMITTER 3 BASE
COLLECTOR 2
PNP 1 EMITTER
NPN BC368 PNP BC369

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg Value 20 25 5.0 1.0 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector Base Breakdown Voltage (IC = 100 A, IE = 0 ) Emitter Base Breakdown Voltage (IE = 100 A, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 10 1.0 10 20 25 5.0 Vdc Vdc Vdc
Adc mAdc Adc
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) CollectorEmitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) BaseEmitter On Voltage (IC = 1.0 A, VCE = 1.0 V) hFE 50 85 60 fT VCE(sat) VBE(on) 65 375 0.5 1.0 MHz V V
297
NPN BC368 PNP BC369

200 VCE , COLLECTOR VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8
hFE, CURRENT GAIN
100 70 50 VCE = 1.0 V TJ = 25C
0.6 50 mA 0.4 100 mA 1000 mA 0.2 500 mA 250 mA 20 50 100
20 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 1000
IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA)
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 VBE(sat) @ IC/IB = 10 VB , TEMPERATURE COEFFICIENT (mV/ C)
0.8
1.2
1.6 VB for VBE
0.4
2.0
0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
2.4
2.8 1.0 2.0
5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
300 200 C, CAPACITANCE (pF)
160 TJ = 25C 120
100 70 50 VCE = 10 V TJ = 25C f = 20 MHz 10 20 50 100 200 500 1000
80 Cibo 40 Cobo 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0
30
298
MOTOROLA
High Voltage Darlington Transistors

NPN Silicon
COLLECTOR 3 BASE 2
BC372 BC373
1 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg BC372 100 100 12 1.0 625 5.0 1.5 12 55 to +150 BC373 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO 100 100 100 nAdc 100 80 12 Vdc nAdc 100 80 Vdc Vdc
299
BC372 BC373
DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) Base Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) hFE 8.0 10 VCE(sat) VBE(sat) 1.0 1.4 160 1.1 2.0 Vdc Vdc K
CurrentGain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob NF 100 200 10 2.0 25 MHz pF dB
100 K VCE = 5 V TA = 125C hFE, DC CURRENT GAIN 25C 10 K 55C
1.6 VBE(sat) @ IC/IB = 100 1.4 1.2 VOLTAGE (V) 1 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 100 VBE(on) @ VCE = 5 V
1K 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
0 5 10 100 IC, COLLECTOR CURRENT (mA) 500

1000 VCE = 5 V TJ = 25C C, CAPACITANCE (pF)
100
Cib Cob
100
10
10 0.6 1
600
1 0.1
10 VR, REVERSE VOLTAGE (VOLTS)
100
2100
MOTOROLA

High Current Transistors
NPN Silicon
BC489,A,B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 0.5 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 5.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B 40 60 100 160 15 160 260 400 250 400
(IC = 1.0 Adc, VCE = 5.0 Vdc)* 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
2101
BC489,A,B

ON CHARACTERISTICS* (Continued)
Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VCE(sat) VBE(sat) 0.85 0.9 1.2 0.2 0.3 0.5 Vdc Vdc
CurrentGain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob Cib 200 7.0 50 MHz pF pF
TURNON TIME 5.0 s +10 V 0 tr = 3.0 ns Vin 5.0 F 1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin
TURNOFF TIME +VBB 100 RB 5.0 F 5.0 s tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT
*CS < 6.0 pF
*CS < 6.0 pF
Figure 1. Switching Time Test Circuits
2102
BC489,A,B
300 200 VCE = 2.0 V TJ = 25C C, CAPACITANCE (pF)
80 60 40 Cibo TJ = 25C
100 70 50
20
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
30 2.0
3.0
200
4.0 0.1
1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 10
ts
tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
10 5.0 7.0
Figure 4. Switching Time
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0
D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE
P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) TJ(pk) TC = P(pk) ZJC(t) TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
ZJC(t) = r(t) RJC ZJA(t) = r(t) RJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k
2.0
5.0
10
2103
BC489,A,B
1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25C TC = 25C 1.0 s
100 s 1.0 ms
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 70 100
400 TJ =125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V
1.0 TJ = 25C 0.8 50 IC = 10 mA mA 100 mA 250 mA 500 mA
0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500
0.2
0 0.05
0.1
0.2
20
50
2104
BC489,A,B
RVB, TEMPERATURE COEFFICIENT (mV/C)
0.8 1.2 V, VOLTAGE (VOLTS)
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4
1.6 RVB for VBE
2.0
2.4
2.8 0.5
1.0
2.0
5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA)
200
500
0 0.5
1.0
2.0
500
Figure 10. BaseEmitter Temperature Coefficient
TJ = 25C 0.8
1.0
0.8
1.2
0.6
1.6 RVB for VBE
0.4 IC = 10 mA 0.2 50 mA 100 mA 250 mA 500 mA
2.0
2.4
0 0.05 0.1 0.2
10
20
50
2.8 0.5
1.0
2.0
500
2105
MOTOROLA

PNP Silicon
BC490,A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 4.0 0.5 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 4.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. hFE BC490 BC490A 40 60 100 15 140 400 250
2106
BC490,A

Characteristic Symbol Min Min Max Unit
ON CHARACTERISTICS(1) (Continued)
Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) VBE(sat) 0.9 1.0 1.2 0.25 0.5 0.5 Vdc Vdc
CurrentGain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. fT Cob Cib 150 9.0 110 MHz pF pF
TURNON TIME 5.0 s +10 V 0 tr = 3.0 ns Vin 5.0 F 1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin
TURNOFF TIME +VBB 100 RB 5.0 F 5.0 s tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT
*CS < 6.0 pF
*CS < 6.0 pF
2107
BC490,A
200 VCE = 2.0 V TJ = 25C 100 70 50 C, CAPACITANCE (pF)
100 70 50 30 20 Cibo TJ = 25C
10 30 7.0 20 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 5.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
Cobo
50 100
1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 ts
td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
tf
tr 10 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500
Figure 4. Switching Time
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0
D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE
P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) TJ(pk) TC = P(pk) ZJC(t) TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
ZJC(t) = r(t) RJC ZJA(t) = r(t) RJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k
2.0
5.0
10
2108
BC490,A
1.0 k 700 IC, COLLECTOR CURRENT (mA) 500 300 200 TA = 25C 100 70 50 30 20 10 1.0 TC = 25C
100 s
1.0 s 1.0 ms
0.4
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500
Figure 6. Active Region, Safe Operating Area
TJ = 25C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA
1.0
0.8 1.2
0.6
1.6
0.4
2.0 RVB for VBE 2.4
0.2
0 0.05
0.1
0.2
1.0 2.0 10 0.5 5.0 IC, COLLECTOR CURRENT (mA)
20
50
2.8 0.5
1.0
2.0
200
500
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5
VCE = 1.0 V
0.7
1.0
2.0
3.0
5.0
7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
2109
BC490,A
1.0 TJ = 25C 0.8
0.6 IC = 10 mA 0.4
50 mA
100 mA
250 mA
500 mA
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500
0.2
0 0.05 0.1
0.2
10
20
50
0.8 1.2
1.6 RVB for VBE
2.0
2.4
2.8 0.5
1.0
2.0
500
2110
MOTOROLA
NPN Silicon
COLLECTOR 1 BASE 2
BC517
EMITTER 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB IC PD PD TJ, Tstg Value 30 40 10 1.0 625 12 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 nAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO ICES ICBO IEBO 30 40 10 500 100 100 Vdc Vdc Vdc nAdc nAdc nAdc
2111
BC517
DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) hFE VCE(sat) VBE(on) 30,000 1.0 1.4 Vdc Vdc

Current Gain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| ftest fT 200 MHz
v 2.0%.
RS
in en
IDEAL TRANSISTOR
2112
BC517
(VCE = 5.0 Vdc, TA = 25C)
IC = 1.0 mA
200
100 70 50 30 20
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2113
BC517
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.0
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
6.0 5.0 7.0 10
500
2114
BC517
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
2115
MOTOROLA

NPN Silicon
BC546, B BC547, A, B, C BC548, A, B, C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC546 65 80 BC547 45 50 6.0 100 625 5.0 1.5 12 55 to +150 BC548 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc) Emitter Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 0.2 0.2 0.2 15 15 15 4.0 V
V(BR)CBO
V(BR)EBO
ICES nA
REV 1
2116
BC546, B BC547, A, B, C BC548, A, B, C

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC547A/548A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) VBE(sat) VBE(on) 0.55 0.7 0.77 0.09 0.2 0.3 0.7 0.25 0.6 0.6 V V 110 110 110 110 200 420 90 150 270 180 290 520 120 180 300 450 800 800 220 450 800 V
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) BaseEmitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)
Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 Cobo Cibo hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C NF BC546 BC547 BC548 2.0 2.0 2.0 10 10 10 125 125 125 240 450 220 330 600 500 900 260 500 900 dB 150 150 150 300 300 300 1.7 10 4.5 pF pF MHz
Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, f = 200 Hz)
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.
2117
BC546, B BC547, A, B, C BC548, A, B, C
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10

2.0 VCE , COLLECTOREMITTER VOLTAGE (V) TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA VB, TEMPERATURE COEFFICIENT (mV/ C) 1.0
55C to +125C 1.2 1.6 2.0 2.4 2.8
0.4
0.02
10
20
0.2
10 1.0 IC, COLLECTOR CURRENT (mA)
100
BC547/BC548
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 400 300 200
3.0 Cob 2.0
100 80 60 40 30 20 0.5 0.7
VCE = 10 V TA = 25C
1.0
0.4 0.6 0.8 1.0
20
40
1.0
30
50
2118
BC546, B BC547, A, B, C BC548, A, B, C
BC547/BC548
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
2.0 TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA VB, TEMPERATURE COEFFICIENT (mV/ C)
1.0
1.4
1.8 VB for VBE 2.2 55C to 125C
0.8
0.4
2.6
3.0 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200
0.02
0.05
0.1
5.0
10
20
BC546
f T, CURRENTGAIN BANDWIDTH PRODUCT 40 TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
500
VCE = 5 V TA = 25C
200 100 50
20
2.0
0.1
0.2
1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS)
50
100
2119
MOTOROLA

Low Noise Transistors
NPN Silicon
BC549B,C BC550B,C
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C V(BR)EBO ICBO IEBO 15 5.0 15 nAdc Adc nAdc 30 50 5.0 Vdc 30 45 Vdc Vdc
2120
BC549B,C BC550B,C

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) BaseEmitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C VCE(sat) VBE(sat) VBE(on) 0.55 0.52 0.55 0.62 0.7 0.075 0.3 0.25 1.1 0.25 0.6 0.6 Vdc Vdc 100 100 200 420 150 270 290 500 450 800 Vdc
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B BC549C/BC550C NF1 NF2 fT Ccbo hfe 240 450 330 600 0.6 500 900 dB 2.5 10 250 2.5 MHz pF
Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 s Duty cycle = 2%.
RS
in en
IDEAL TRANSISTOR
2121
BC549B,C BC550B,C
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

10 7.0 5.0 Cib TA = 25C
100 80 60 40 30 20
VCE = 10 V TA = 25C
3.0 Cob 2.0
0.5 0.7
1.0
2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
50
1.0 0.4
0.6
1.0
2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
170 160
150 VCE = 10 V f = 1.0 kHz TA = 25C
140
130
120 0.1
0.2
5.0
10
2122
MOTOROLA

PNP Silicon
BC556,B BC557,A,B,C BC558B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC556 65 80 BC557 45 50 5.0 100 625 5.0 1.5 12 55 to +150 BC558 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 2.0 2.0 2.0 100 100 100 4.0 4.0 4.0 nA 5.0 5.0 5.0 80 50 30 V 65 45 30 V V
Collector Base Breakdown Voltage (IC = 100 Adc)
Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0)
CollectorEmitter Leakage Current (VCES = 40 V) (VCES = 20 V) (VCES = 20 V, TA = 125C)
2123

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) VBE(sat) VBE(on) 0.55 0.62 0.7 0.7 0.82 0.7 1.0 V 0.075 0.3 0.25 0.3 0.6 0.65 V 120 120 120 120 180 420 90 150 270 170 290 500 120 180 300 500 800 800 220 460 800 V
(IC = 2.0 mAdc, VCE = 5.0 V)
(IC = 100 mAdc, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see Note 1) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)
Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 220 330 600 500 900 260 500 900 2.0 2.0 2.0 10 10 10 280 320 360 3.0 6.0 pF dB MHz
Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
2124
BC557/BC558
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
0.3 0.2 0.2
0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc)
100 200
0 0.1 0.2
2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOREMITTER VOLTAGE (V) TA = 25C 1.6
1.0 55C to +125C 1.2 1.6 2.0 2.4 2.8
1.2 IC = 10 mA IC = 50 mA IC = 20 mA IC = 200 mA IC = 100 mA
0.8
0.4
0.02
10 20
0.2
100

10 7.0 C, CAPACITANCE (pF) 5.0 Cob Cib TA = 25C
400 300 200 150 100 80 60 40 30 20 0.5 VCE = 10 V TA = 25C
3.0 2.0
1.0 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
2125
BC556
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 5.0 10 20 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1 0.2
2.0 VB, TEMPERATURE COEFFICIENT (mV/ C)
1.0
1.6 IC = 10 mA 20 mA 50 mA 100 mA 200 mA
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
0.4 TJ = 25C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20
2.6
3.0 0.2
0.5 1.0
50 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
100 200
f T, CURRENTGAIN BANDWIDTH PRODUCT
40 TJ = 25C C, CAPACITANCE (pF) 20 Cib
500
VCE = 5.0 V
200 100 50
10 8.0 6.0 4.0 2.0 0.1 0.2 Cob
20
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50 100
100 1.0 10 IC, COLLECTOR CURRENT (mA)
2126
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = (t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
10 5.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 65 100 VCE, COLLECTOREMITTER VOLTAGE (V)
2.0 1.0
2127
MOTOROLA

PNP Silicon
BC559B BC559C BC560C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC559x 30 30 5.0 100 625 5.0 1.5 12 55 to +150 BC560C 45 50 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = +125C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC559B, C BC560C V(BR)CBO BC559B, C BC560C V(BR)EBO ICBO IEBO 15 5.0 15 nAdc Adc nAdc 30 50 5.0 Vdc 30 45 Vdc Vdc
replaces BC559/D
2128

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) BaseEmitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C VCE(sat) VBE(sat) VBE(on) 0.55 0.52 0.55 0.62 0.7 0.075 0.3 0.25 1.1 0.25 0.6 Vdc Vdc 100 100 180 380 150 270 290 500 460 800 Vdc
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC559B BC559C/BC560C NF1 NF2 fT Ccbo hfe 240 450 330 600 0.5 500 900 dB 2.0 10 250 2.5 MHz pF
Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz, f = 200 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 s Duty cycle = 2%.
2129

2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc) 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V

10 7.0 5.0 Cib TA = 25C
100 80 60 40 30 20
VCE = 10 V TA = 25C
3.0 Cob 2.0
0.5 0.7 1.0
2.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc)
50
1.0 0.4 0.6
1.0
2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS)
20
40
170 160
150 VCE = 10 V f = 1.0 kHz TA = 25C
140
130
120 0.1
0.2
5.0
10
2130
MOTOROLA
NPN Silicon
COLLECTOR 1 BASE 2
BC618
EMITTER 3
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 55 80 12 1.0 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watts mW/C C CASE 2904, STYLE 17 TO92 (TO226AA)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 55 80 12 50 50 50 Vdc Vdc Vdc nAdc nAdc nAdc
2131
BC618
ON CHARACTERISTICS
Collector Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) Base Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) DC Current Gain (IC = 100 A, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) VCE(sat) VBE(sat) hFE 2000 4000 10000 4000 50000 1.1 1.6 Vdc Vdc
Current Gain Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) fT Cob Cib 150 4.5 5.0 7.0 9.0 MHz pF pF
RS
in en
IDEAL TRANSISTOR
2132
BC618
(VCE = 5.0 Vdc, TA = 25C)
IC = 1.0 mA
200
100 70 50 30 20
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2133
BC618
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.0
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
6.0 5.0 7.0 10
500
2134
BC618
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
2135
MOTOROLA

NPN Silicon
BC635 BC637 BC639
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC635 45 45 BC637 60 60 5.0 0.5 625 5.0 1.5 12 55 to +150 BC639 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO 100 10 nAdc Adc 45 60 80 5.0 Vdc 45 60 80 Vdc Vdc
Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0)
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2136
BC635 BC637 BC639

DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 VCE(sat) VBE(on) 25 40 40 40 25 250 160 160 0.5 1.0 Vdc Vdc
(IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib 200 7.0 50 MHz pF pF
2137
BC635 BC637 BC639

1000 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5 2 1 1 PD TA 25C PD TC 25C BC635 BC637 BC639 100 PD TC 25C PD TA 25C SOA = 1S hFE, DC CURRENT GAIN 200 500 VCE = 2 V
100
50
2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
20
10 30 50 100 IC, COLLECTOR CURRENT (mA)
300 500
1000

500 300 V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V
100
VCE = 2 V
0.6
0.4
50
0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
0.2
1.0 VCE = 2 VOLTS T = 0C to +100C 1.6 V for VBE 2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000
2138
MOTOROLA

PNP Silicon
BC636 BC638 BC640
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC636 45 45 BC638 60 60 5.0 0.5 625 5.0 1.5 12 55 to +150 BC640 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage* (IC = 10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO 100 10 nAdc Adc 45 60 80 5.0 Vdc 45 60 80 Vdc Vdc
Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0)
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2139
BC636 BC638 BC640

DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC636 BC638 BC640 VCE(sat) VBE(on) 25 40 40 40 25 0.25 0.5 250 160 160 0.5 1.0 Vdc Vdc
(IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib 150 9.0 110 MHz pF pF
2140
BC636 BC638 BC640

1000 500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5 2 1 1 PD TA 25C PD TC 25C BC636 BC638 BC640 PD TC 25C PD TA 25C SOA = 1S hFE, DC CURRENT GAIN 200 A 100 L 500 VCE = 2 V B
50
2 3 4 5 7 10 20 3040 50 70 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
20
300 500 1000

500 300 V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V
100
VCE = 2 V
0.6
0.4
50
0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 100 10 IC, COLLECTOR CURRENT (mA) 1000
Figure 3. Current Gain Bandwidth Product
0.2
1.0 VCE = 2 VOLTS T = 0C to +100C 1.6 V for VBE 2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000
2141
MOTOROLA

PNP Silicon
2 BASE 1 EMITTER COLLECTOR 3
BC807-16LT1 BC807-25LT1 BC807-40LT1
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
DEVICE MARKING
BC80716LT1 = 5A; BC80725LT1 = 5B; BC80740LT1 = 5C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (VEB = 0, IC = 10 A) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TJ = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO 100 5.0 nA A 45 50 5.0 V V V
REV 1
2142
BC807-16LT1 BC807-25LT1 BC807-40LT1

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC80716 BC80725 BC80740 VCE(sat) VBE(on) 100 160 250 40 250 400 600 0.7 1.2 V V
(IC = 500 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base Emitter On Voltage (IC = 500 mA, IB = 1.0 V)

Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) fT Cobo 100 10 MHz pF
2143
MOTOROLA

NPN Silicon
1 BASE 2 EMITTER COLLECTOR 3
BC817-16LT1 BC817-25LT1 BC817-40LT1
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
DEVICE MARKING
BC81716LT1 = 6A; BC81725LT1 = 6B; BC81740LT1 = 6C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (VEB = 0, IC = 10 A) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO 100 5.0 nA A 45 50 5.0 V V V
REV 2
2144
BC817-16LT1 BC817-25LT1 BC817-40LT1

ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC81716 BC81725 BC81740 VCE(sat) VBE(on) 100 160 250 40 250 400 600 0.7 1.2 V V
(IC = 500 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base Emitter On Voltage (IC = 500 mA, VCE = 1.0 V)

Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) fT Cobo 100 10 MHz pF
2145
MOTOROLA

NPN Silicon
1 BASE
COLLECTOR 3
BC846ALT1,BLT1 BC847ALT1, BLT1,CLT1 thru BC850BLT1,CLT1
2 EMITTER
BC846, BC847 and BC848 are Motorola Preferred Devices
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
1 2 3
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector Emitter Breakdown Voltage BC846A,B (IC = 10 A, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C BC848A,B,C, BC849B,C, BC850B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 15 5.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ICBO
nA A
REV 1
2146

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE 110 200 420 580 90 150 270 180 290 520 0.7 0.9 660 220 450 800 0.25 0.6 700 770 V V mV
(IC = 2.0 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC849B,C, BC850B,C 1.0 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10 fT Cobo NF 10 4.0 100 4.5 MHz pF dB
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3

55C to +125C 1.2 1.6 2.0 2.4 2.8
0.4
0.02
10
20
0.2
100
Figure 3. Collector Saturation Region Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 4. BaseEmitter Temperature Coefficient 2147
BC847/BC848
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C 400 300 200
3.0 Cob 2.0
100 80 60 40 30 20 0.5 0.7
VCE = 10 V TA = 25C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS)
20
40
1.0
30
50
1.0
1.4
0.8
0.4
2.6
0.02
0.05
0.1
5.0
10
20
2148
BC846
40 TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
500
VCE = 5 V TA = 25C
200 100 50
20
2.0
0.1
0.2
50
100
2149
MOTOROLA
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications.
BC846AWT1,BWT1 BC847AWT1,BWT1, CWT1 BC848AWT1,BWT1, CWT1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc
1 2 3
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD RqJA PD TJ, Tstg Max 150 833 2.4 55 to +150 Unit mW C/W mW/C C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 15 5.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
nA A
2150
BC846AWT1,BWT1 BC847AWT1,BWT1,CWT1 BC848AWT1,BWT1,CWT1

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) hFE 110 200 420 580 90 150 270 180 290 520 0.7 0.9 660 220 450 800 0.25 0.6 700 770 V V mV
(IC = 2.0 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C fT Cobo NF 10 4.0 100 4.5 MHz pF dB
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10

55C to +125C 1.2 1.6 2.0 2.4 2.8
0.4
0.02
10
20
0.2
100
2151
BC847/BC848
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C 400 300 200
3.0 Cob 2.0
100 80 60 40 30 20 0.5 0.7
VCE = 10 V TA = 25C
1.0
0.4 0.6 0.8 1.0
4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS)
20
40
1.0
30
50
1.0
1.4
0.8
0.4
2.6
0.02
0.05
0.1
5.0
10
20
2152
BC846
40 TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
500
VCE = 5 V TA = 25C
200 100 50
20
2.0
0.1
0.2
50
100
2153
MOTOROLA

PNP Silicon
1 BASE
BC856ALT1,BLT1
COLLECTOR 3
BC857ALT1,BLT1 BC858ALT1,BLT1, CLT1
Motorola Preferred Devices
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC856 65 80 5.0 100 BC857 45 50 5.0 100 BC858 30 30 5.0 100
2 EMITTER Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
1 2 3
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 5.0 5.0 5.0 15 4.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ICBO
nA A
REV 1
2154
BC856ALT1,BLT1 BC857ALT1,BLT1 BC858ALT1,BLT1,CLT1

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.82 0.7 0.9 V 0.3 0.65 V hFE 125 220 420 90 150 270 180 290 520 250 475 800 V
(IC = 2.0 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)

Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 4.5 10 MHz pF dB
2155
BC857/BC858
0.3 0.2 0.2
100 200
0 0.1 0.2
1.0 55C to +125C 1.2 1.6 2.0 2.4 2.8
0.8
0.4
0.02
10 20
0.2
100

400 300 200 150 100 80 60 40 30 20 0.5 VCE = 10 V TA = 25C
3.0 2.0
1.0 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
2156
BC856
0.1 0.2
1.0
1.6 IC = 10 mA 20 mA 50 mA 100 mA 200 mA
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
2.6
3.0 0.2
0.5 1.0
100 200
500
VCE = 5.0 V
200 100 50
10 8.0 6.0 4.0 2.0 0.1 0.2 Cob
20
50 100
2157
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
10 5.0
2.0 1.0
2158
MOTOROLA
PNP Silicon
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1, CWT1

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC856 65 80 5.0 100 BC857 45 50 5.0 100 BC858 30 30 5.0 100 Unit V V V mAdc
1 2
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 5.0 5.0 5.0 15 4.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in
ICBO
nA A
2159
BC856AWT1,BWT1 BC857AWT1,BWT1 BC858AWT1,BWT1,CWT1

ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.82 0.7 0.9 V 0.3 0.65 V hFE 125 220 420 90 150 270 180 290 520 250 475 800 V
(IC = 2.0 mA, VCE = 5.0 V)
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)

Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 4.5 10 MHz pF dB
2160
BC857/BC858
0.3 0.2 0.2
100 200
0 0.1 0.2
1.0 55C to +125C 1.2 1.6 2.0 2.4 2.8
0.8
0.4
0.02
10 20
0.2
100

400 300 200 150 100 80 60 40 30 20 0.5 VCE = 10 V TA = 25C
3.0 2.0
1.0 0.4 0.6
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
2161
BC856
0.1 0.2
1.0
1.6 IC = 10 mA 20 mA 50 mA 100 mA 200 mA
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
2.6
3.0 0.2
0.5 1.0
100 200
500
VCE = 5.0 V
200 100 50
10 8.0 6.0 4.0 2.0 0.1 0.2 Cob
20
50 100
2162
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
10 5.0
2.0 1.0
2163
MOTOROLA
PNP Silicon Epitaxial Transistor

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High Current: 1.5 Amps NPN Complement is BCP56 The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel.
COLLECTOR 2,4
BCP53T1
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
BASE 1 EMITTER 3
2 3
CASE 318E-04, STYLE 1 TO-261AA
MAXIMUM RATINGS (TC = 25C unless otherwise noted)

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 80 100 5.0 1.5 1.5 12 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/C C
DEVICE MARKING
AH
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
REV 1
2164
BCP53T1
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 1.0 kohm) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICBO IEBO 100 80 100 5.0 100 10 Vdc Vdc Vdc Vdc nAdc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 25 40 25 VCE(sat) VBE(on) 250 0.5 1.0 Vdc Vdc
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) fT 50 MHz

f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 2 V hFE , DC CURRENT GAIN 500 300
200
VCE = 2 V 100 50
100
50
20
300 500
1000
20
1000

1 120 110 100 90 80 70 60 50 40 30 20 10 0 0
0.8 V, VOLTAGE (VOLTS)
0.6
V(BE)on @ VCE = 2 V
C, CAPACITANCE (pF)
V(BE)sat @ IC/IB = 10
Cib
0.4
0.2 V(CE)sat @ IC/IB = 10 0 1 10 100 1000
Cob 2 4 6 8 10 12 14 16 18 20
V, VOLTAGE (VOLTS)
Figure 3. Saturation and ON Voltages Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 4. Capacitances 2165
MOTOROLA
NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. High Current: 1.0 Amp The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP56T1 to order the 7 inch/1000 unit reel Use BCP56T3 to order the 13 inch/4000 unit reel PNP Complement is BCP53T1
BASE 1 EMITTER 3
BCP56T1 SERIES
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
COLLECTOR 2,4
1 2 3

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 80 100 5 1 1.5 12 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/C C
DEVICE MARKING
BCP56T1 = BH BCP56-10T1 = BK BCP56-16T1 = BL
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
REV 1
2166
BCP56T1 SERIES
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 100 80 5.0 100 10 Vdc Vdc Vdc nAdc Adc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) hFE All Part Types BCP56T1 BCP56-10T1 BCP56-16T1 All Types VCE(sat) VBE(on) 25 40 63 100 25 250 160 250 0.5 1.0 Vdc Vdc
(IC = 500 mA, VCE = 2.0 V) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% fT 130 MHz
2167
BCP56T1 SERIES
1000
TJ = 125C TJ = 25C 100 TJ = 55C
10
100
1000

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1000
80 60 TJ = 25C C, CAPACITANCE (pF) 40 Cibo
100
20
10 1.0
1000
4.0 0.1
Figure 2. Current-Gain Bandwidth Product
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA
0.6
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 500
0.2 0 0.05
0.1
0.2
20
50
2168
MOTOROLA

This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. High Current: IC = 1.0 Amp The SOT-223 Package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP68T1 to order the 7 inch/1000 unit reel. Use BCP68T3 to order the 13 inch/4000 unit reel. The PNP Complement is BCP69T1
COLLECTOR 2,4
BCP68T1
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
2 3
BASE 1 EMITTER 3

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 25 20 5 1 1.5 12 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/C C
DEVICE MARKING
CA
REV 1
2169
BCP68T1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO 25 20 5.0 10 10 Vdc Vdc Vdc Adc Adc
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 50 85 60 VCE(sat) VBE(on) 375 0.5 1.0 Vdc Vdc
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% fT 60 MHz

f T, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz) 300 200
300 200 100
TJ = 125C = 25C = 55C
100 70 50 VCE = 10 V TJ = 25C f = 30 MHz
VCE = 1.0 V 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000
30
10
1000
Figure 2. Current-Gain-Bandwidth Product
2170
BCP68T1
1.0 TJ = 25C VBE(sat) @ IC/IB = 10 Cib, CAPACITANCE (pF) 80 TJ = 25C 70
0.6
VBE(on) @ VCE = 1.0 V
60
0.4
50
0.2
VCE(sat) @ IC/IB = 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA)
40
30
1.0
2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS)
5.0
TJ = 25C Cob, CAPACITANCE (pF) 20
25
0.8
1.2
1.6 RVB for VBE 2.0
15
10
2.4
5.0
5.0 10 15 VR, REVERSE VOLTAGE (VOLTS)
20
2.8 1.0
1000
Figure 6. Base-Emitter Temperature Coefficient
1.0 TJ = 25C VCE , COLLECTOR VOLTAGE (V) 0.8
0.6
= 1000 mA I C = 10 mA = 100 mA
0.4
= 50 mA
0.2
= 500 mA
0 0.01
0.1
1.0 10 IB, BASE CURRENT (mA)
100
2171
MOTOROLA

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. High Current: IC = 1.0 Amp The SOT-223 Package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. NPN Complement is BCP68
COLLECTOR 2,4
BCP69T1
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
2 3
BASE 1 EMITTER 3

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 25 20 5.0 1.0 1.5 12 65 to 150 Unit Vdc Vdc Vdc Adc Watts mW/C C
DEVICE MARKING
CE
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
REV 2
2172
BCP69T1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO 25 20 5.0 10 10 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 50 85 60 VCE(sat) VBE(on) 375 0.5 1.0 Vdc Vdc
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) fT 60 MHz

200 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 300 200
hFE , CURRENT GAIN
100 70 50 VCE = 1.0 V TJ = 25C
100 70 50 VCE = 10 V TJ = 25C f = 30 MHz
20 10
1000
30 10
1000

1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) V(BE)sat @ IC/IB = 10 C, CAPACITANCE (pF) 160
TJ = 25C 120
0.6
V(BE)on @ VCE = 1.0 V
80 Cib 40 Cob 0 Cob Cib 5.0 1.0 1.0 2.0 1.5 3.0 2.0 4.0 2.5 5.0
0.4
0.2
V(CE)sat @ IC/IB = 10 10 100 1000 IC, COLLECTOR CURRENT (mA)
0 1.0
Figure 3. Saturation and ON Voltages
Figure 4. Capacitances Motorola SmallSignal Transistors, FETs and Diodes Device Data 2173
MOTOROLA

PNP Silicon
BCW29LT1 BCW30LT1
3 1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc
CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, VEB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IC = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 100 10 nAdc Adc 32 32 32 5.0 Vdc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2174
BCW29LT1 BCW30LT1
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BCW29 BCW30 VCE(sat) VBE(on) 0.6 0.75 0.3 Vdc 120 215 260 500 Vdc
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF 10 7.0 dB pF
2175
BCW29LT1 BCW30LT1
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as: NF
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2176 Motorola SmallSignal Transistors, FETs and Diodes Device Data
BCW29LT1 BCW30LT1
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) TA = 25C BCW29LT1 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2177
BCW29LT1 BCW30LT1
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 BCW29LT1 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C BCW29LT1 hfe 200 @ IC = 1.0 mA
2178
BCW29LT1 BCW30LT1
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO

A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The BCW29LT1 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
4 0
2 0
2179
MOTOROLA

NPN Silicon
BCW33LT1
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW33LT1 = D3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CBO V(BR)EBO ICBO 100 10 nAdc Adc 32 32 5.0 Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2180
BCW33LT1
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 420 VCE(sat) VBE(on) 0.55 0.70 0.25 Vdc 800 Vdc

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF 4.0 10 pF dB
EQUIVALENT SWITCHING TIME TEST CIRCUITS

+ 3.0 V 300 ns DUTY CYCLE = 2% 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.9 V 10 k 275
10 < t1 < 500 s DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors
2181
BCW33LT1
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
10 7.0 5.0 10 A 3.0
100 A
30 A

(VCE = 5.0 Vdc, TA = 25C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as: NF
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
IC, COLLECTOR CURRENT (A)
BCW33LT1
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) BCW33LT1 TJ = 25C 100
0.8 IC = 1.0 mA 10 mA 50 mA
TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0%
IB = 500 A 400 A 300 A
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
*APPLIES for IC/IB hFE/2 25C to 125C
*qVC for VCE(sat) 55C to 25C
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2183
BCW33LT1
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA)
50 70
100

500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200
D = 0.5
0.2
FIGURE 19A
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
2184
BCW33LT1
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

A train of periodical power pulses can be represented by the model as shown in Figure 16A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 16 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 16 by the steady state value RJA. Example: The MPS3904 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
4 0
2 0
Figure 16A.
2185
MOTOROLA

NPN Silicon
COLLECTOR 3 1 BASE
BCW60ALT1 BCW60BLT1 BCW60DLT1

3
2 EMITTER
1 2
MAXIMUM RATINGS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES IEBO 20 20 20 nAdc Adc nAdc 32 5.0 Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2186

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D hfe BCW60A BCW60B BCW60D VCE(sat) VBE(sat) 0.7 0.6 VBE(on) 0.6 0.75 1.05 0.85 Vdc 0.55 0.35 Vdc 125 175 350 250 350 700 Vdc 20 30 100 120 175 380 60 70 100 220 310 630
AC Current Gain (VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)
Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) fT 125 Cobo NF 6.0 4.5 dB pF MHz
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) ton toff 800 150 ns ns

10 < t1 < 500 s DUTY CYCLE = 2%
2187

(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2

400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
IB = 500 A 400 A 300 A
0.6
60 200 A 40 100 A 20
0.4
0.2
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2189

t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
2190

r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
4.0 6.0 8.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
40
Figure 20.
2191
MOTOROLA

PNP Silicon
COLLECTOR 3 1 BASE
BCW61BLT1 BCW61CLT1 BCW61DLT1

3
2 EMITTER
1 2
MAXIMUM RATINGS
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES 20 20 nAdc Adc 32 5.0 Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2192

ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D hfe BCW61B BCW61C BCW61D VCE(sat) VBE(sat) 0.68 0.6 VBE(on) 0.6 0.75 1.05 0.85 Vdc 0.55 0.25 Vdc 175 250 350 350 500 700 Vdc 30 40 100 140 250 380 80 100 100 310 460 630
AC Current Gain (VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz)

Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF 6.0 6.0 dB pF
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) ton toff 800 150 ns ns
2193

(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) TA = 25C BCW61 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2195

t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200
D = 0.5
0.2
FIGURE 19
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
2196


A train of periodical power pulses can be represented by the model as shown in Figure 15. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 14 by the steady state value RJA. Example: The MPS3905 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
4 0
2 0
2197
MOTOROLA

NPN Silicon
COLLECTOR 3 1 BASE
BCW65ALT1
3 1
2 EMITTER
MAXIMUM RATINGS
DEVICE MARKING
BCW65ALT1 = EA

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc, IE = 0) (VCE = 32 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)EBO ICES IEBO 20 20 20 nAdc Adc nAdc 32 60 5.0 Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2198
BCW65ALT1
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 75 100 35 VCE(sat) VBE(sat) 2.0 0.7 0.3 Vdc 220 250 Vdc

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF 100 12 80 10 MHz pF pF dB
TurnOn Time (IB1 = IB2 = 15 mAdc) TurnOff Time (IC = 150 mAdc, RL = 150 ) ton toff 100 400 ns ns
2199
MOTOROLA

PNP Silicon
BCW68GLT1
3 1 2
MAXIMUM RATINGS
DEVICE MARKING
BCW68GLT1 = DH

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 10 Adc, VEB = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE= 45 Vdc, IE = 0) (VCE= 45 Vdc, IB = 0, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICES IEBO 20 10 20 nAdc Adc nAdc 45 60 5.0 Vdc Vdc Vdc
2200
BCW68GLT1
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 120 160 60 VCE(sat) VBE(sat) 400 1.5 2.0 Vdc Vdc
CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB= 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC= 0.2 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF 100 18 105 10 MHz pF pF dB
2201
MOTOROLA

PNP Silicon
COLLECTOR 3 1 BASE
BCW69LT1 BCW70LT1
3 1
2 EMITTER
MAXIMUM RATINGS
Rating CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 45 5.0 100 Unit Vdc Vdc mAdc
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, VEB = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100C) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICBO 100 10 nAdc Adc 45 50 5.0 Vdc Vdc Vdc
2202
BCW69LT1 BCW70LT1
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BCW69 BCW70 VCE(sat) VBE(on) 120 215 0.6 260 500 0.3 0.75 Vdc Vdc
CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF 7.0 10 pF dB
2203
BCW69LT1 BCW70LT1
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
BCW69LT1 BCW70LT1
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2205
BCW69LT1 BCW70LT1
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 16 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
2206
BCW69LT1 BCW70LT1

A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 14 by the steady state value RJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
4 0
2 0
2207
MOTOROLA

NPN Silicon
BCW72LT1
3 1 2
MAXIMUM RATINGS
DEVICE MARKING
BCW72LT1 = K2

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 100 10 nAdc mAdc 45 45 50 5.0 Vdc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2208
BCW72LT1
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 200 VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.85 Vdc 0.21 0.25 Vdc 450 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Input Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF 300 9.0 4.0 10 MHz pF pF dB

10 < t1 < 500 s DUTY CYCLE = 2%

(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A
Figure 3. Noise Voltage Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 4. Noise Current 2209
BCW72LT1
(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband
2210
BCW72LT1
400
TJ = 125C
200
25C
100
IB = 500 A 400 A 300 A
0.6
60 200 A 40 100 A 20
0.4
0.2
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2211
BCW72LT1
t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
2212
BCW72LT1
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

4 0
2 0
Figure 19A.
100 s 10 s 1.0 s
dc
40
Figure 20.
2213
MOTOROLA
PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1

3 1 2
MAXIMUM RATINGS
Value Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BCX17LT1 BCX19LT1 45 50 5.0 500 BCX18LT1 BCX20LT1 25 30 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
2214
PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO BCX17, 19 BCX18, 20 V(BR)CES BCX17, 19 BCX18, 20 ICBO IEBO 100 5.0 10 nAdc Adc Adc 50 30 45 25 Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) CollectorEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 100 70 40 VCE(sat) VBE(on) 600 0.62 1.2 Vdc Vdc
2215
MOTOROLA

NPN Silicon
BCX70GLT1 BCX70JLT1 BCX70KLT1

3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES IEBO 20 20 20 nAdc mAdc nAdc 45 5.0 Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2216

ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K VCE(sat) VBE(sat) 0.7 0.6 VBE(on) 0.55 1.05 0.85 0.75 Vdc 0.55 0.35 Vdc 40 100 120 250 380 60 90 100 220 460 630 Vdc

CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) BCX70G BCX70J BCX70K NF fT Cobo hfe 125 250 350 250 500 700 6.0 dB 125 4.5 MHz pF
Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990) ton toff 150 800 ns ns

10 < t1 < 500 s DUTY CYCLE = 2%
2217

(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2

400
TJ = 125C
200
25C
100
IB = 500 A 400 A 300 A
0.6
60 200 A 40 100 A 20
0.4
0.2
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2219

t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
2220

0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

4 0
2 0
Figure 19A.
100 s 10 s 1.0 s
dc
40
Figure 20.
2221
MOTOROLA
One Watt Amplifier Transistor

NPN Silicon
COLLECTOR 3 2 BASE
BDB01C
1 EMITTER
CASE 2905, STYLE 1 TO92 (TO226AE)
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value 80 80 5.0 0.5 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watt mW/C Watt mW/C C
PD
TJ, Tstg

OFF CHARACTERISTICS
Collector Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO 80 ICBO IEBO 100 0.01 nAdc Vdc
mAdc
REV 1
2222
BDB01C
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) 400 0.7 1.2 Vdc Vdc
Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 30 MHz pF
v 300 ms, Duty Cycle 2.0%.
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
1.0 TJ = 25C 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS)
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
20 5.0 10 50 100 IC, COLLECTOR CURRENT (mA)
200
500
2223
BDB01C
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25C
1.6 VB for VBE
20
2.0
2.4
2.8 0.5
1.0
2.0
200
500
4.0 0.1

300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C 1.0 s 1.0 ms 100 s
100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN BDB01C LIMIT 2.0 5.0 10 20 45 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 7. Active RegionSafe Operating Area
2224
MOTOROLA
One Watt Amplifier Transistors

PNP Silicon
BDB02C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value 80 80 5.0 0.5 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watt mW/C Watt mW/C C CASE 2905, STYLE 1 TO92 (TO226AE)
PD
TJ, Tstg

OFF CHARACTERISTICS
Collector Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO 80 ICBO IEBO 0.1 100 nAdc Vdc
mAdc
ON CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width REV 1 fT Cob 50 30 MHz pF
v 300 ms, Duty Cycle 2.0%.
2225
BDB02C
400 TJ = 125C hFE, DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7
VCE = 1.0 V
1.0
2.0
3.0
5.0
50
70
100
200
300
500
0.6 IC = 10 mA 0.4
50 mA
100 mA
250 mA
500 mA
0.4
0.2
0 0.05 0.1
0.2
10
20
50
0 0.5 1.0
2.0
500
VB, TEMPERATURE COEFFICIENT (mV/C)
0.8 1.2 C, CAPACITANCE (pF)
100 70 50 30 20 Cibo TJ = 25C
1.6 VB for VBE
2.0
2.4
10 7.0
Cobo
2.8 0.5
1.0
2.0
500
5.0 0.1
0.2
50 100
2226
BDB02C
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz 300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2 k 1 k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 BDB02C 2.0 5.0 10 20 45 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) TA = 25C TC = 25C 10 s dc 1.0 ms 100 s
100 70 50
dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
2227
MOTOROLA

NPN Silicon
COLLECTOR 2 3 BASE
BDC01D
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BDC01D 100 100 5.0 0.5 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO ICBO IEBO 100 0.1 100 Vdc
mAdc
nAdc
2228
BDC01D
ON CHARACTERISTICS
Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 30 MHz pF
v 300 ms; Duty Cycle 2.0%.
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
2229
BDC01D
1.6 VB for VBE
20
2.0
2.4
2.8 0.5
1.0
2.0
200
500
4.0 0.1

100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 10 20 60 80 100 2.0 5.0 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2230
MOTOROLA
RF Transistor
NPN Silicon
BF199
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 25 40 4.0 100 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO 25 V(BR)CBO 40 V(BR)EBO 4.0 ICBO 100 nAdc Vdc Vdc Vdc
2231
BF199
ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) hFE 40 VBE(on) 770 900 85 mVdc
Current Gain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 35 MHz) fT 400 Cre Nf 2.5 0.25 0.35 dB 750 pF MHz
2232
BF199
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25C BF199 10
C, CAPACITANCE (pF)
2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob
20 10
Cre @ IE = 0
0.2 0.3 0.5 0.7 1 3 5 10 20 IC, COLLECTOR CURRENT (mA)
100
0.1
0.2
0.5 1 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS)
100 VCE = 10 V TA = 25C hFE, DC CURRENT GAIN VCE = 10 V 50 100 MHz
200 100 70 50 30 20 10 0.1 mmhos BF199
20 10 5
45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
2 1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (mA)
Figure 4. b11e
100 VCE = 10 V 50 45 MHz 100 MHz
2000 1000 VCE = 10 V 500 mhos 45 MHz 100 MHz
mmhos
20 10 5
10.7 MHz
200 100 50
10.7 MHz
2 1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
20
470 kHz 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7
Figure 5. b21e
Figure 6. b22e (boe)
2233
BF199
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz
20 10 5
0.2 0.1
Figure 7. g11e (gie)
Figure 8. g21e (Yfe)
200 VCE = 10 V 100 50 mhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz
Figure 9. g22e (goe)
2234
MOTOROLA
RF Transistor
NPN Silicon
BF224
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 45 4.0 50 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 30 V(BR)CBO 45 V(BR)EBO 4.0 ICBO IEBO 100 100 nAdc nAdc Vdc Vdc Vdc
2235
BF224
ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 VBE(on) VCE(sat) 0.15 0.77 0.9 Vdc mVdc
Current Gain Bandwidth Product (IC = 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 7.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCE = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 100 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 200 MHz) fT 300 Cre Nf 2.5 3.5 0.28 dB 600 850 pF MHz
2236
BF224
C, CAPACITANCE (pF)
2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob
20 10
Cre @ IE = 0
100
0.1
0.2
200 100 70 50 30 20 10 0.1 mmhos BF224
20 10 5
2 1
Figure 4. b11e
100 VCE = 10 V 50 45 MHz 100 MHz
2000 1000 VCE = 10 V 500 mhos 45 MHz 100 MHz
mmhos
20 10 5
10.7 MHz
200 100 50
10.7 MHz
20
Figure 5. b21e
2237
BF224
20 10 5
0.2 0.1
2238
MOTOROLA

AM/FM Transistor
NPN Silicon
COLLECTOR 1 3 BASE
BF240
2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 4.0 25 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 40 40 4.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) hFE VBE(on) 65 0.65 0.7 220 0.74 Vdc
CurrentGain Bandwidth Product (IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cre 600 0.28 0.34 MHz pF
v 300 ms, Duty Cycle v 2.0%.
REV 1
2239
BF240
C, CAPACITANCE (pF)
2 Cib 1 0.7 0.5 0.4 0.3 0.2 Cob
20 10
Cre @ IE = 0
100
0.1
0.2
200 100 70 50 30 20 10 0.1 mmhos BF240
20 10 5
2 1
Figure 4. b11e
100 VCE = 10 V 50 45 MHz 100 MHz
2000 1000 VCE = 10 V 500 mhos 45 MHz 100 MHz
mmhos
20 10 5
10.7 MHz
200 100 50
10.7 MHz
20
Figure 5. b21e
2240
BF240
20 10 5
0.2 0.1
2241
MOTOROLA
High Voltage Transistor

NPN Silicon
BF393
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB =0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO 300 V(BR)CBO 300 V(BR)EBO 6.0 ICBO IEBO 0.1 0.1 Adc Adc Vdc Vdc Vdc
(Replaces BF392/D)
2242
BF393
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 VCE(sat) VBE(sat) 2.0 2.0 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 60 Vdc, IE = 0, f = 1.0 MHz) fT 50 Cre 2.0 pF MHz
2243
BF393
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125C
100
25C 50 55C 30 20 1.0
2.0
3.0
5.0
7.0 10 IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
2.0 1.0 0.2
100
200
10 1.0
2.0
50
70 100
1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms
200
500
Figure 5. Maximum Forward Bias Safe Operating Area
2244
MOTOROLA

NPN Silicon
BF420 BF422
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BF420 300 300 5.0 500 625 5.0 1.5 12 55 to +150 BF422 250 250 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF420 BF422 V(BR)CBO BF420 BF422 V(BR)EBO BF420 BF422 ICBO BF420 BF422 IEBO BF420 BF422 100 0.01 nAdc 5.0 5.0 Adc 300 250 Vdc 300 250 Vdc Vdc
2245
BF420 BF422
ON CHARACTERISTICS
DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE BF420 BF422 VCE(sat) VBE(sat) 2.0 0.5 Vdc 50 50 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) fT 60 Cre 1.6 pF MHz
2246
BF420 BF422
100
25C 50 55C 30 20 1.0
2.0
3.0
5.0
20
30
50
70
100
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
2.0 1.0 0.2
100
200
10 1.0
2.0
50
70 100
200
500
2247
MOTOROLA

PNP Silicon
BF421 BF423
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD BF421 300 300 5.0 500 625 5.0 1.5 12 55 to +150 BF423 250 250 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
PD
TJ, Tstg

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF421 BF423 V(BR)CBO BF421 BF423 V(BR)EBO BF421 BF423 ICBO BF421 BF423 IEBO BF421 BF423 100 0.01 nAdc 5.0 5.0 300 250 Vdc 300 250 Vdc Vdc
mAdc
2248
BF421 BF423
ON CHARACTERISTICS
DC Current Gain (IC = 25 mA, VCE = 20 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mA, IB = 2.0 mA) hFE BF421 BF423 VCE(sat) VBE(sat) 50 50 0.5 2.0 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Common Emitter Feedback Capacitance (VCB = 30 Vdc, IE = 0, f = 1.0 MHz) fT Cre 60 2.8 MHz pF
2249
BF421 BF423
150 100 hFE, DC CURRENT GAIN +25C 70 50 55C TJ = +125C VCE = 10 Vdc
30 20 15 1.0 2.0 3.0 5.0 7.0 10 20 30 50 80 100
100 50 Cib C, CAPACITANCE (pF) 20 10 5.0
100 80 60 40 30 20 TJ = 25C VCE = 20 Vdc
2.0 Ccb 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000 VR, REVERSE VOLTAGE (VOLTS)
0 1.0
2.0
50
100
1.0 IC, COLLECTOR CURRENT (mA)
500 1.0 ms 1.0 s
100 s
0.8 V, VOLTAGE (VOLTS) VBE @ VCE = 10 V 0.6
200 100
BF423 50
1.5 WATT THERMAL LIMITATION @ TC = 25C 625 mW THERMAL LIMITATION @ TA = 25C
0.4
BF421
20 10
0.2
VCE(sat) @ IC/IB = 10 mA
0 1.0
2.0
50
100
5.0 3.0
BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150C 100 200 300 5.0 10 20 30 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2250
MOTOROLA

PNP Silicon
BF493S
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 350 350 6.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0, TA = 25C) (VCB = 250 Vdc, IE = 0, TA = 100C) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO ICBO 0.005 1.0 350 350 6.0 10 0.1 Vdc Vdc Vdc nAdc
mAdc mAdc
2251
BF493S
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter On Voltage (IC = 20 mA, IB = 2.0 mA) hFE 25 40 VCE(sat) VBE(sat) 2.0 2.0 Vdc Vdc
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CommonEmitter Feedback Capacitance (VCB = 100 Vdc, IE = 0, f = 1.0 MHz) fT Cre 50 1.6 MHz pF
2252
BF493S
30 20 15 1.0 2.0 3.0 5.0 7.0 10 20 30 50 80 100
100 80 60 40 30 20 TJ = 25C VCE = 20 Vdc
0 1.0
2.0
50
100
500 1.0 ms 1.0 s
100 s
200 100
MPSA93 50
0.4
MPSA92
20 10
0.2
0 1.0
2.0
50
100
5.0 3.0
2253
MOTOROLA
NPN Silicon Transistor

COLLECTOR 2,4 BASE 1 EMITTER 3
BF720T1
NPN SILICON TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts C C
1 2 3
CASE 318E-04, STYLE 1 SOT223 (TO-261AA)
DEVICE MARKING
DC
Characteristic Thermal Resistance from Junction-to-Ambient(1) Symbol RJA Max 83.3 Unit C/W

Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 2.7 k) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 k) (VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER 50 10 nAdc Adc 300 300 300 5.0 10 Vdc Vdc Vdc Vdc nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
REV 2
2254
BF720T1
ON CHARACTERISTICS
DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) hFE VCE(sat) 50 0.6 Vdc
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 1.6 MHz pF
2255
MOTOROLA
PNP Silicon Transistor

BF721T1
PNP SILICON TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts C C
1 2 3
CASE 318E-04, STYLE 1 SOT223 (TO-261AA)
DEVICE MARKING
DF
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C/W

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 2.7 k) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 k) (VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER 50 10 nAdc Adc 300 300 300 5.0 10 Vdc Vdc Vdc Vdc nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
REV 3
2256
BF721T1
ON CHARACTERISTICS
DC Current Gain (VCE = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) hFE 50
VCE(sat)
0.8
Vdc
Current-Gain Bandwidth Product (VCE = 10 Vdc, IC = 10 mAdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 1.6 MHz pF
2257
MOTOROLA

NPN Silicon
BF844
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 450 6.0 300 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 450 450 6.0 0.1 500 0.1 Vdc Vdc Vdc Vdc Adc nAdc Adc
2258
BF844
ON CHARACTERISTICS
DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 50 45 20 VCE(sat) VBE(sat) 0.4 0.5 0.75 0.75 Vdc 200 Vdc
High Frequency Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) TurnOn Time (VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc) 1. Pulse Test: Pulse Width |hfe| Cob Cib ton toff 1.0 6.0 110 0.6 10 pF pF s s
2259
BF844
160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 55C 20 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 300 25C TA = 125C VCE = 10 V VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 0.5
0.4
IC = 1.0 mA
IC = 10 mA
IC = 50 mA
0.3 TA = 25C 0.2
0.1
0 10
30
100
300 1.0 k 3.0 k IB, BASE CURRENT (A)
10 k
50 k
1.0 TA = 25C VBE(sat) @ IC/IB = 10
1000 1.0 ms IC, COLLECTOR CURRENT (mA) 300 200 100 TA = 25C TC = 25C 100 s
1.0 s
0.6
VBE(on) @ VCE = 10 V
0.4
20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE 10% 2.0 20 50 10 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500
0.2
2.0 0 0.1 0.3 30 3.0 10 1.0 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0
100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 TA = 25C f = 1.0 MHz 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob |h fe |, SMALLSIGNAL CURRENT GAIN Cib
10
3.0 2.0 1.5 1.0 0.1
VCE = 10 V f = 10 MHz TA = 25C
0.2 0.3
1.0 3.0 10 IC, COLLECTOR CURRENT (mA)
30
100
2260
BF844
10 5.0 +9.7 V PW = 50 s DUTY CYCLE = 2.0% Vin
t, TIME ( s)
2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C VBE(off) = 4.0 Vdc tr td 50 100 Vin RB 0 4.0 V VCC RL Vout
0.2 0.1 1.0
CS 4.0 pF*
Figure 7. TurnOn Switching Times and Test Circuit
10 5.0 ts t, TIME ( s) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 tf 11.4 V +10.7 V
Vin
PW = 50 s DUTY CYCLE = 2.0%
0.2 0.1 1.0
VCC RL 100 Vin RB CS 4.0 pF* Vout
Figure 8. TurnOff Switching Times and Test Circuit

* Total Shunt Capacitance or Test Jig and Connectors.
2261
MOTOROLA
VHF Transistor
NPN Silicon
BF959
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 20 30 3.0 100 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 20 30 3.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) hFE 35 40 VCE(sat) VBE(sat) 1.0 1.0 Vdc Vdc

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, Pf = 0, f = 10 MHz) Noise Figure (IC = 4.0 mA, VCE = 10 V, RS = 50 , f = 200 MHz) fT 700 600 Cre Nf 0.65 3.0 pF dB MHz
2262
BF959
1000 500 hFE , DC CURRENT GAIN 200 200 100 100 50 40 30 20 10 mV 50 40 30 20 10 1 2 3 4 5 10 20 30 50 100 1 500
4 5
10
20
30
50
Figure 1. hFE at 10 V
f T, CURRENTGAIN BANDWIDTH PRODUCT (GHz)
Figure 2. VCE(sat) at IC/IB = 10
2.0 1.8 C, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 1 2 3 4 5 10 20 2V 10 V 5V
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 30 40 50 100 1 2 3 4 5 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Cre Cib Cob
10 5 4 3 2 Y11e (ms) 1 0.5 0.4 0.3 0.2 0.1 b11e Y22e ( s) g11e VCE = 10 V
500 b22e 300 200 VCE = 10 V 100 50 40 30 20 10 1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 50 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) g22e
Figure 5. Input Impedance at 30 MHz
Figure 6. Output Impedance at 30 MHz
2263
MOTOROLA
SOT-223 Package High Voltage Transistor

PNP Silicon
BSP16T1
SOT223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Total Device Dissipation, TA = 25C (1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC IB PD Tstg TJ Value 300 350 6.0 1000 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc mAdc Watts C C
2 3
DEVICE MARKING
BT2
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83.3 Unit C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0, L = 25 mH) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 250 Vdc, IB = 0) CollectorBase Cutoff Current (VCB = 280 Vdc, IE = 0) EmitterBase Cutoff Current (VEB = 6.0 Vdc, IC = 0) V(BR)CEO 300 V(BR)CBO 300 ICES ICBO IEBO 20 1.0 Adc 50 Adc Adc Vdc Vdc
REV 2
2264
BSP16T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
ON CHARACTERISTICS
DC Current Gain (VCE = 10 Vdc, IC = 50 mAdc) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) hFE 30 VCE(sat) 2.0 120 Vdc
Current Gain Bandwidth Product (VCE = 10 Vdc, IC = 10 mAdc, f = 30 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT 15 Cobo 15 pF MHz
2265
MOTOROLA

This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High Voltage: V(BR)CEO of 250 and 350 Volts. The SOT-223 package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel T1 Configuration 7 inch/1000 unit reel T3 Configuration 13 inch/4000 unit reel PNP Complement is BSP16T1
COLLECTOR 2,4
BSP19AT1
SOT223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
BASE 1 EMITTER 3
2 3

Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25C(1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 350 400 5.0 1000 0.8 6.4 65 to 150 150 Unit Vdc Vdc Vdc mAdc Watts mW/C C C
DEVICE MARKING
SP19A
Characteristic Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 156 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
REV 2
2266
BSP19AT1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Cutoff Current (VCB = 400 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO 350 ICBO IEBO 10 20 Adc nAdc Vdc
DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% hFE 40 fT 70 VCE(sat) VBE(sat) 1.3 0.5 Vdc Vdc MHz
2267
MOTOROLA
NPN Small-Signal Darlington Transistor

This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BSP52T1 to order the 7 inch/1000 unit reel Use BSP52T3 to order the 13 inch/4000 unit reel PNP Complement is BSP62T1
COLLECTOR 2,4 BASE 1
BSP52T1
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
2 3
EMITTER 3

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 0.8 6.4 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/C C
DEVICE MARKING
AS3
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 156 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1
2268
BSP52T1
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CBO 90 V(BR)EBO 5.0 ICES IEBO 10 10 Adc Adc Vdc Vdc
DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% hFE 1000 2000 VCE(sat) VBE(on) 1.9 1.3 Vdc Vdc
2269
MOTOROLA
PNP Small-Signal Darlington Transistor

This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BSP62T1 to order the 7 inch/1000 unit reel. Use BSP62T3 to order the 13 inch/4000 unit reel. NPN Complement is BSP52T1
COLLECTOR 2,4 BASE 1
BSP62T1
MEDIUM POWER PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
2 3
EMITTER 3

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCES VCBO VEBO IC PD TJ, Tstg Value 80 90 5.0 500 1.5 12 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/C C
DEVICE MARKING
BS3
1. Device mounted on a FR4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
REV 2
2270
BSP62T1
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CBO 90 V(BR)EBO 5.0 ICBO IEBO 10 10 Adc Adc Vdc Vdc
DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% hFE 1000 2000 VCE(sat) VBE(on) 1.9 1.3 Vdc Vdc
2271
BSP62T1
200 hFE, DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 10 V 25C VCE = 2.0 V 5.0 V TA = 125C
55C
10 |h FE |, HIGH FREQUENCY CURRENT GAIN VCE = 5.0 V f = 100 MHz TA = 25C
2.0 TA = 25C
2.0 1.0
V, VOLTAGE (VOLTS)
4.0 3.0
1.6
VBE(sat) @ IC/IB = 100
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
0.4 0.2 0.1 1.0
2.0
5.0
10
20
50
100
200
500
1K
0 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300
2.0 1.8 1.6 IC = 10 mA 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1K 2K 5K 10K IB, BASE CURRENT (A) 50 mA 100 mA 175 mA 300 mA TA = 25C
2272
MOTOROLA

PNP Silicon
1 BASE
COLLECTOR 3
BSS63LT1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage RBE = 10 k Collector Current Continuous Symbol VCEO VCER 110 IC 100 Value 100
2 EMITTER
1
Unit Vdc Vdc mAdc
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BSS63LT1 = T1

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc) Collector Emitter Breakdown Voltage (IC = 10 Adc, IE = 0, RBE = 10 k) Collector Base Breakdown Voltage (IE = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc) Collector Cutoff Current (VCB = 90 Vdc, IE = 0) Collector Cutoff Current (VCE = 110 Vdc, RBE = 10 k) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 100 V(BR)CER 110 V(BR)CBO 110 V(BR)EBO 6.0 ICBO ICER IEBO 200 10 nAdc 100 Adc nAdc Vdc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
REV 1
2273
BSS63LT1
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 25 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 25 mAdc, IB = 2.5 mAdc) Base Emitter Saturation Voltage (IC = 25 mAdc, IB = 2.5 mAdc) hFE 30 30 VCE(sat) VBE(sat) 900 250 mVdc mVdc

Current Gain Bandwidth Product (IC = 25 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Case Capacitance (IE = IC = 0, VCB = 10 Vdc, f = 1.0 MHz) fT 50 CC 20 95 pF MHz
2274
MOTOROLA
Driver Transistor
NPN Silicon
1 BASE
COLLECTOR 3
BSS64LT1
2 EMITTER
3 1 2
MAXIMUM RATINGS
DEVICE MARKING
BSS64LT1 = AM

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 4.0 mAdc) Collector Base Breakdown Voltage (IC = 100 mAdc) Emitter Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 80 V(BR)CBO 120 V(BR)EBO 5.0 ICBO IEBO 200 0.1 500 nAdc Adc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
REV 1
2275
BSS64LT1
ON CHARACTERISTICS
DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) Collector Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) Forward Base Emitter Voltage HFE 20 VCE(sat) VBE(sat) 0.15 0.2 Vdc

Current Gain Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) fT 60 Cob 20 pF MHz
2276
MOTOROLA
Switching Transistor
NPN Silicon
1 BASE
COLLECTOR 3
BSV52LT1
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Collector Current Continuous Symbol VCEO VCBO IC Value 12 20 100 Unit Vdc Vdc mAdc
DEVICE MARKING
BSV52LT1 = B2

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) (VCB = 10 Vdc, IE = 0, TA = 125C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 12 ICBO 100 5.0 nAdc Adc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2277
BSV52LT1
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 300 Adc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 25 40 25 VCE(sat) VBE(sat) 700 850 1200 300 250 400 mVdc 120 mVdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz) fT 400 Cobo Cibo 4.5 4.0 pF pF MHz
Storage Time (IC = IB1 = IB2 = 10 mAdc) TurnOn Time (VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc) TurnOff Time (IC = 10 mAdc, IB = 3.0 mAdc) ts ton toff 18 12 ns 13 ns ns
2278
MOTOROLA
Preliminary Data Sheet
Bias Resistor Transistor
DTA114YE
3 2 1
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e SOT416/SC90 package which is ideal for lowpower surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
OUT (3)
GND (2)
R1 = 10 k R2 = 47 k
MAXIMUM RATINGS (TA = 25C unless otherwise noted)

Rating Output Voltage Input Voltage Output Current Symbol VO VI IO Value 50 40 100 Unit Vdc Vdc mAdc
DEVICE MARKING
DTA114YE = 59
Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 55 to +150 150 mW C C

Characteristic Input Off Voltage (VO = 5.0 Vdc, IO = 100 Adc) Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc) Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc) Input Current (VI = 5.0 Vdc) Output Cutoff Current (VO = 50 Vdc) DC Current Gain (VO = 5.0 Vdc, IO = 5.0 mAdc) Input Resistance Resistance Ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R1/R2 Min 1.4 68 7.0 0.17 Typ 10 0.21 Max 0.3 0.3 0.88 500 13 0.25 Unit Vdc Vdc Vdc mAdc nAdc kOhms
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
REV 1
2279
DTA114YE
1 G I , DC CURRENT GAIN (NORMALIZED) IO/II = 10 VO(on), OUTPUT VOLTAGE (V) TA = 25C 25C 0.1 75C
180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IO, OUTPUT CURRENT (mA) 80 90 100 25C VO(on) = 10 V 25C TA = 75C
0.01
0.001
20
40 60 IO, OUTPUT CURRENT (mA)
80
Figure 1. VO(on) versus IO
Figure 2. GI, DC Current Gain
100 TA = 75C IO, OUTPUT CURRENT (mA) 25C V I , INPUT VOLTAGE (VOLTS)
10 VO = 0.2 V 25C TA = 25C 75C 1
25C 10
VO = 5 V 1 0 2 4 6 VI, INPUT VOLTAGE (V) 8 10 0.1 0 10 20 30 IO, OUTPUT CURRENT (mA) 40 50
Figure 3. Output Current versus Input Voltage
Figure 4. Input Voltage versus Output Current
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
+12 V
Typical Application for PNP BRTs
LOAD
Figure 5. Output Capacitance
Figure 6. Inexpensive, Unregulated Current Source
2280
MOTOROLA
DTA143EE
3 2 1
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 1 4 3 E E i s h o u s e d i n t h e SOT416/SC90 package which is ideal for lowpower surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
OUT (3)
GND (2)
R1 = 4.7 k R2 = 4.7 k

DEVICE MARKING
DTA143EE = 43

Characteristic Input Off Voltage (VO = 5.0 Vdc, IO = 100 Adc) Input On Voltage (VO = 0.3 Vdc, IO = 20 mAdc) Output On Voltage (IO = 10 mAdc, II = 0.5 mAdc) Input Current (VI = 5.0 Vdc) Output Cutoff Current (VO = 50 Vdc) DC Current Gain (VO = 5.0 Vdc, IO = 10 mAdc) Input Resistance Resistance Ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R1/R2 Min 3.0 20 3.3 0.8 Typ 4.7 1.0 Max 0.5 0.3 1.8 500 6.1 1.2 Unit Vdc Vdc Vdc mAdc nAdc kOhms
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. * Typical electrical characteristic curves are not available at this time.
2281
MOTOROLA
DTC114TE
3 2 1
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114TE is housed in the SOT416/SC90 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1
OUT (3)
R1 = 10 k
GND (2)

Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
DEVICE MARKING
DTC114TE = 94

Characteristic CollectorBase Breakdown Voltage (IC = 50 Adc) CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc) EmitterBase Breakdown Voltage (IE = 50 Adc) CollectorBase Cutoff Current (VCB = 50 Vdc) EmitterBase Cutoff Current (VEB = 4.0 Vdc) DC Current Gain (IC = 1.0 mAdc, VCE = 5 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Input Resistance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) R1 Min 50 50 5.0 100 7.0 Typ 300 10 Max 500 500 600 0.3 13 Unit Vdc Vdc Vdc nAdc nAdc Vdc kOhms
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. * Typical electrical characteristic curves are not available at this time.
2282
MOTOROLA
DTC114YE
3 2 1
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114YE is housed in the SOT416/SC90 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
OUT (3)
GND (2)
R1 = 10 k R2 = 47 k

DEVICE MARKING
DTC114YE = 69

Characteristic Input Off Voltage (VO = 5.0 Vdc, IO = 100 Adc) Input On Voltage (VO = 0.3 Vdc, IO = 1.0 mAdc) Output On Voltage (IO = 5.0 mAdc, II = 0.25 mAdc) Input Current (VI = 5.0 Vdc) Output Cutoff Current (VO = 50 Vdc) DC Current Gain (VO = 5.0 Vdc, IO = 5.0 mAdc) Input Resistance Resistance Ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R1/R2 Min 1.4 68 7.0 0.17 Typ 10 0.21 Max 0.3 0.3 0.88 500 13 0.25 Unit Vdc Vdc Vdc mAdc nAdc kOhms
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
REV 1
2283
DTC114YE
1 VO(on), OUTPUT VOLTAGE (V) IO/II = 10 TA = 25C 25C 0.1 75C G I , DC CURRENT GAIN (NORMALIZED) 300 250 200 25C 150 100 50 0 VO(on) = 10 TA = 75C 25C
0.01
0.001
20
80
8 10 15 20 40 50 60 70 80 IO, OUTPUT CURRENT (mA)
90 100
Figure 1. VO(on) versus IO
Figure 2. GI, DC Current Gain
100 TA = 75C IO, OUTPUT CURRENT (mA) 25C V I , INPUT VOLTAGE (VOLTS)
10 VO = 0.2 V TA = 25C 25C 75C
25C 10
VO = 5 V 1 0 2 4 6 VI, INPUT VOLTAGE (V) 8 10
0.1
10
40
50
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
2284
DTC114YE
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
FROM P OR OTHER LOGIC
Figure 6. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT IN LOAD
Figure 7. Open Collector Inverter: Inverts the Input Signal
2285
MOTOROLA
Dual General Purpose Transistors

The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spinoffs of our popular SOT23/SOT323 threeleaded devices. They are designed for general purpose amplifier applications and are housed in the SOT363 sixleaded surface mount package. By putting two discrete devices in one package, these devices are ideal for lowpower surface mount applications where board space is at a premium. hFE, 100300 Low VCE(sat), 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7inch/3,000 Unit Tape and Reel
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

6 5 4
CASE 419B01, STYLE 1
MBT3904DW1T1
(3) (2) (1)
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Symbol VCEO VCBO VEBO IC 200 200 Value 40 40 60 40 6.0 5.0 Unit Vdc Vdc Vdc
(3) (4) (5) (6) Q1 Q2
MBT3906DW1T1
(2) (1)
Collector Current Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP)
mAdc
Q1 Q2
Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW MBT3946DW1T1* C/W C
Q1 Q2 (3) (2) (1) (4) (5) (6)
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint.
DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46 MBT3906DW1T1 = A2
(4)
(5)
(6)
*Q1 same as MBT3906DW1T1 Q2 same as MBT3904DW1T1
2286

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) IBL MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ICEX MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) 50 50 50 50 nAdc 6.0 5.0 nAdc 60 40 Vdc 40 40 Vdc Vdc
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE MBT3904DW1T1 (NPN) 40 70 100 60 30 60 80 100 60 30 VCE(sat) MBT3904DW1T1 (NPN) VBE(sat) MBT3904DW1T1 (NPN) 0.65 0.65 0.85 0.95 0.85 0.95 0.2 0.3 0.25 0.4 Vdc 300 300 Vdc
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. fT MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cobo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cibo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) 8.0 10.0 4.0 4.5 pF 300 250 pF MHz
2287

Characteristic Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hre MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hfe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) hoe MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) NF 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 0.5 0.1 8.0 10 Symbol hie 1.0 2.0 10 12 X 10 4 Min Max Unit k
mmhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3904DW1T1 (NPN) (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3906DW1T1 (PNP)
Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = 1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf 35 35 ns 35 35 200 225 ns 50 75
2288

MBT3904DW1T1 (NPN)
DUTY CYCLE = 2% 300 ns
+3 V +10.9 V 10 k 275
10 < t1 < 500 ms DUTY CYCLE = 2%
t1
+3 V +10.9 V 275 10 k
0 0.5 V < 1 ns Cs < 4 pF* 9.1 V < 1 ns 1N916 Cs < 4 pF*

TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cibo 3.0 2.0 Cobo MBT3904DW1T1 (NPN) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MBT3904DW1T1 (NPN)
1.0 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2289

MBT3904DW1T1 (NPN)
500 300 200 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 V 15 V 10 2.0 V 50 70 100 200 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V

500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 IC/IB = 20 IC/IB = 10 500 300 200
Figure 6. Rise Time
VCC = 40 V IB1 = IB2 IC/IB = 20
100 70 50 30 20 10 7 5 IC/IB = 10
MBT3904DW1T1 (NPN) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 8. Fall Time

12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1.0 kHz 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 MBT3904DW1T1 (NPN) 10 20 40 100 IC = 100 mA IC = 1.0 mA
IC = 0.5 mA IC = 50 mA
MBT3904DW1T1 (NPN) 10 20 40 100
f, FREQUENCY (kHz)
Figure 9. Noise Figure 2290
Figure 10. Noise Figure Motorola SmallSignal Transistors, FETs and Diodes Device Data

MBT3904DW1T1 (NPN) h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 MBT3904DW1T1 (NPN) h fe , CURRENT GAIN 200 hoe, OUTPUT ADMITTANCE (m mhos) 100 50 MBT3904DW1T1 (NPN)
20 10 5
100 70 50
2 1
30
0.1
0.2
5.0
10
0.1
0.2
5.0
10

20 h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MBT3904DW1T1 (NPN) hre , VOLTAGE FEEDBACK RATIO (x 10 4) 10 7.0 5.0 3.0 2.0
MBT3904DW1T1 (NPN)
2.0 1.0 0.5
0.2
0.1
0.2
5.0
10
2291

MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C MBT3904DW1T1 (NPN) VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3904DW1T1 (NPN) 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25C
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MBT3904DW1T1 (NPN) VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0 MBT3904DW1T1 (NPN) 0.5 +25C TO +125C
qVC FOR VCE(sat)

0 0.5 55C TO +25C 1.0 +25C TO +125C 1.5 2.0 55C TO +25C
qVB FOR VBE(sat)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2292

MBT3906DW1T1 (PNP)
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns
3V 275
Cs < 4 pF*

TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 MBT3906DW1T1 (PNP) 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10 MBT3906DW1T1 (PNP)
QT QA
1.0 0.1
0.2 0.3
20 30 40
1.0
2.0 3.0
200

500 300 200 100 70 50 30 20 10 7 5 MBT3906DW1T1 (PNP) IC/IB = 10 500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5

MBT3906DW1T1 (PNP) IC/IB = 20 VCC = 40 V IB1 = IB2
TIME (ns)
IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2293

MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 MBT3906DW1T1 (PNP) 20 40 100 0 0.1 0.2 IC = 50 mA IC = 100 mA MBT3906DW1T1 (PNP) 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) 40 100 IC = 1.0 mA
4.0
3.0
2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4
1.0
0 0.1
1.0 2.0 4.0 10 f, FREQUENCY (kHz)
Figure 25.
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) MBT3906DW1T1 (PNP) h fe , DC CURRENT GAIN 200 100 70 50 30 20 MBT3906DW1T1 (PNP)
100 70 50
10 7
30
0.1
0.2
5.0 7.0 10
0.1
0.2
5.0 7.0 10

hre , VOLTAGE FEEDBACK RATIO (x 10 4) 20 h ie , INPUT IMPEDANCE (k OHMS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 MBT3906DW1T1 (PNP) 10 7.0 5.0 3.0 2.0
MBT3906DW1T1 (PNP)
0.1
0.2
5.0 7.0 10
Figure 29. Input Impedance 2294

MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 MBT3906DW1T1 (PNP) 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MBT3906DW1T1 (PNP) 0.8 IC = 1.0 mA 10 mA 30 mA TJ = 25C 100 mA
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10

1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 1.0 0.5 0 0.5 1.0 55C TO +25C 1.5 2.0 MBT3906DW1T1 (PNP) +25C TO +125C
qVC FOR VCE(sat)
+25C TO +125C
0.6 MBT3906DW1T1 (PNP) 0.4 VCE(sat) @ IC/IB = 10
55C TO +25C
0.2
qVB FOR VBE(sat)
1.0
2.0
100
200
20
40
160
180 200
2295
MOTOROLA
Chopper Transistor
PNP Silicon
COLLECTOR 3 1 BASE
MMBT404ALT1
2 EMITTER
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 35 40 25 150 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
DEVICE MARKING
MMBT404ALT1 = 2N
Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,** TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature * FR5 = 1.0 x 0.75 x 0.062 in. ** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0)
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
35 40 25
100 100
Vdc Vdc Vdc nAdc nAdc
2296
MMBT404ALT1
ON CHARACTERISTICS
DC Current Gain (IC = 12 mAdc, VCE = 0.15 Vdc) CollectorEmitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) BaseEmitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 0.85 1.0 0.15 0.2 Vdc 100 400 Vdc
Output Capacitance (VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 20 pF
Delay time (VCC = 10 Vdc, IC = 10 mAdc) (Figure 1) Rise Time (IB1 = 1.0 mAdc, VBE(off) = 14 Vdc) Storage Time (VCC = 10 Vdc, IC = 10 mAdc) Fall Time (IB1 = IB2 = 1.0 mAdc) (Figure 1) td tr ts tf 43 180 675 160 ns ns ns ns
VBB RBB 1.0 k 0.1 F Vin 51 RB 10 k
VCC = 10 V
1.0 k TO SCOPE
Vin (Volts) ton, td, tr toff, ts and tf 12 +20.6
VBB (Volts) +1.4 11.6
Voltages and resistor values shown are for IC = 10 mA, IC/IB = 10 and IB1 = IB2
2297
MOTOROLA
VHF/UHF Transistor
NPN Silicon
1 BASE
MMBT918LT1
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50
2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2
Characteristic Total Device Dissipation FR 5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT918LT1 = M3B

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 30 3.0 50 Vdc Vdc Vdc nAdc
2298
MMBT918LT1
ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 20 0.4 1.0 Vdc Vdc

Current Gain Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 50 , f = 60 MHz) (Figure 1) Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) CommonEmitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) fT Cobo Cibo NF Pout Gpe 30 11 3.0 1.7 2.0 6.0 pF dB mW dB 600 MHz pF
VBB EXTERNAL 100 k
VCC
1000 pF BYPASS
0.018 F 0.018 F 3 0.018 F NF TEST CONDITIONS IC = 1.0 mA VCE = 6.0 VOLTS RS = 50 f = 60 MHz Gpe TEST CONDITIONS IC = 6.0 mA VCE = 12 VOLTS f = 200 MHz C G 0.018 F 50
RF VM
Figure 1. NF, Gpe Measurement Circuit 20200
2299
MOTOROLA
Low Saturation Voltage PNP Silicon Driver Transistors

Part of the GreenLine Portfolio of devices with energyconserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC59 packages which are designed for low power surface mount applications. Low VCE(sat), < 0.1 V at 50 mA Applications LCD Backlight Driver Annunciator Driver General Output Device Driver MAXIMUM RATINGS (TA = 25C)
PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT
3 1 2
CASE 31808, STYLE 6 SOT-23
3 2 1
DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP
CASE 318D04, STYLE 1 SC-59
Rating Power Dissipation TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 250 1.8 RJA TJ Tstg 556 150 55 ~ + 150 Unit mW mW/C C/W C C BASE EMITTER COLLECTOR
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 A, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA Min 15 5.0 300 Max 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc A A Vdc
Base-Emitter Saturation Voltage
VBE(sat)(2)
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 2
2300
MOTOROLA


NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 package which is designed for low power surface mount applications. COLLECTOR
3
MMBT2222AWT1
1 BASE 2 EMITTER
1 2
MAXIMUM RATINGS
CASE 419 02, STYLE 3 SOT 323/SC 70
Characteristic Total Device Dissipation FR 5 Board TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT2222AWT1 = 1P

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 20 10 Vdc Vdc Vdc nAdc nAdc
2301
MMBT2222AWT1
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 35 50 75 100 40 VCE(sat) VBE(sat) 0.6 1.2 2.0 0.3 1.0 Vdc Vdc

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small Signal Current Gain (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 0.25 75 25 8.0 30 1.25 4.0 375 200 4.0 MHz pF pF k ohms X 10 4
mmhos
dB
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 10 ns 25 225 ns 60
2302
MOTOROLA

NPN Silicon
1 BASE
COLLECTOR 3
MMBT2222LT1 MMBT2222ALT1*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 2222 30 60 5.0 600 2222A 40 75 6.0
2 EMITTER
1
Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 60 Vdc, IE = 0, TA = 125C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 30 40 60 75 5.0 6.0 10 0.01 0.01 10 10 100 20 Vdc Vdc Vdc nAdc Adc
IEBO IBL
nAdc nAdc
0.062 in. 0.024 in. 99.5% alumina.
2303
MMBT2222LT1 MMBT2222ALT1
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) Collector Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A 0.6 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 300 Vdc
MMBT2222A only
MMBT2222 MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

Current Gain Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MMBT2222 MMBT2222A hie MMBT2222A MMBT2222A hre MMBT2222A MMBT2222A hfe MMBT2222A MMBT2222A hoe MMBT2222A MMBT2222A rb, Cc MMBT2222A NF MMBT2222A 4.0 150 dB 5.0 25 35 200 ps 50 75 300 375 8.0 4.0 2.0 0.25 8.0 1.25 X 10 4 fT MMBT2222 MMBT2222A Cobo Cibo 30 25 k 8.0 pF 250 300 pF MHz
mmhos
SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 10 ns 25 225 ns 60
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity.
2304
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
50
70
100
200
300
500 700 1.0 k
1.0 0.8
0.6
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
2.0
3.0
5.0
10
20
30
50
2305
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
tf
Figure 6. Turn Off Time
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE
10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A 100 A 500 A 1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0 50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)

30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1
500 VCE = 20 V TJ = 25C
300 200
100 70 50 1.0
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
50
70 100
2306
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5
0.2
2307
MOTOROLA
Switching Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200
2 EMITTER Unit Vdc Vdc Vdc Vdc mAdc

1 2
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (3) (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 10 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
V(BR)CEO 15 V(BR)CES 40 V(BR)CBO 40 V(BR)EBO 4.5 ICBO ICES MMBT2369A 0.4 0.4 30
Vdc Vdc Vdc Vdc Adc
Adc

2308
ON CHARACTERISTICS
DC Current Gain (3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A VCE(sat) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A VBE(sat) MMBT2369A MMBT2369A MMBT2369A MMBT2369A 0.7 0.85 1.02 1.15 1.60 0.25 0.20 0.30 0.25 0.50 Vdc 40 40 20 30 20 20 120 120 Vdc

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Cobo hfe 5.0 4.0 pF
Storage Time (IB1 = IB2 = IC = 10 mAdc) TurnOn Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 3. Pulse Test: Pulse Width ts ton toff 10 18 8.0 12 ns 5.0 13 ns ns
2309
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
+10.6 V 0 1.5 V t1 3V 270 +10.75 V 0 9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270
< 1 ns
3.3 k
Cs* < 4 pF
3.3 k
Cs* < 4 pF
Figure 1. ton Circuit 10 mA
Figure 3. toff Circuit 10 mA
+10.8 V 2 V 0
t1
10 V
95 +11.4 V 0 8.6 V
t1
10 V
95
< 1 ns
1k
Cs* < 12 pF
< 1 ns PULSE WIDTH (t1) BETWEEN 10 AND 500 s DUTY CYCLE = 2%
1k 1N916
Cs* < 12 pF
Figure 2. ton Circuit 100 mA
Figure 4. toff Circuit 100 mA
* Total shunt capacitance of test jig and connectors. TURNON WAVEFORMS Vin 0 ton 10% Vout 90% Vin 3.3 k 3.3 k 0.0023 F 0.005 F VBB + 0.1 F 50 0.0023 F 0.005 F 0.1 F +V =3V CC 220 0.1 F Vout 0 TO OSCILLOSCOPE INPUT IMPEDANCE = 50 RISE TIME = 1 ns TURNOFF WAVEFORMS Vin Vout toff 10% 90% VBB = +12 V Vin = 15 V
PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 PW 300 ns DUTY CYCLE < 2%
50
Figure 5. TurnOn and TurnOff Time Test Circuit
6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25C LIMIT TYPICAL SWITCHING TIMES (nsec)
100 50 tr (VCC = 3 V) tf tr 10 5 ts VCC = 10 V F = 10 VCC = 10 V VOB = 2 V
20
td
1 0.1
2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100
Figure 6. Junction Capacitance Variations
Figure 7. Typical Switching Times
2310
500 VCC = 10 V 25C 100C QT, F = 10 QT, F = 40 +5 V 100 0 50 QA, VCC = 10 V 20 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 QA, VCC = 3 V V < 1 ns 4.3 k 270 VALUES REFER TO IC = 10 mA TEST
200 CHARGE (pC)
t1
3V 10 pF MAX
Cs* < 4 pF
PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2%
Figure 9. QT Test Circuit
C < COPT C COPT TIME
C=0
+6 V 0 4 V
t1
10 V
980
< 1 ns
500
Cs* < 3 pF

VCE , MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 11. Storage Time Equivalent Test Circuit
1.0 TJ = 25C IC = 3 mA 0.6 IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA
0.8
0.4
0.2 0.02
0.05
0.1
0.2
0.5 1 IB, BASE CURRENT (mA)
10
20
Figure 12. Maximum Collector Saturation Voltage Characteristics
2311
200 hFE , MINIMUM DC CURRENT GAIN TJ = 125C 100 75C 25C 15C 50 55C VCE = 1 V
TJ = 25C and 75C
20 1 2 5 10 IC, COLLECTOR CURRENT (mA) 20 50 100
Figure 13. Minimum Current Gain Characteristics
1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 F = 10 TJ = 25C COEFFICIENT (mV/ C) MAX VBE(sat)
1.0 0.5 0 0.5 1.0 1.5 VB for VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.0 2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100
VC VB
VC for VCE(sat)
APPROXIMATE DEVIATION FROM NOMINAL 55C to +25C 0.15 mV/C 0.4 mV/C 25C to 125C 0.15 mV/C 0.3 mV/C
(25C to 125C) (55C to +25C)
MIN VBE(sat)
(55C to +25C) (25C to 125C)
Figure 15. Typical Temperature Coefficients
2312
MOTOROLA
Low Noise Transistor

NPN Silicon
1 BASE
COLLECTOR 3
MMBT2484LT1
MAXIMUM RATINGS
2 EMITTER
1
DEVICE MARKING
MMBT2484LT1 = 1U

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 60 V(BR)CBO 60 V(BR)EBO 5.0 ICBO IEBO 10 10 10 nAdc Adc nAdc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2313
MMBT2484LT1
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) hFE 250 VCE(sat) VBE(on) 0.95 0.35 Vdc 800 Vdc

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz, BW = 200 Hz) Cobo Cibo NF 3.0 6.0 dB 6.0 pF pF
RS
in en
IDEAL TRANSISTOR
2314
MMBT2484LT1
10 7.0 5.0
100 kHz 5.0 10

8.0

IC = 10 mA
3.0 mA 1.0 mA 300 A
12
2315
MMBT2484LT1
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
0.4 0.8
0.6
VBE @ VCE = 5.0 V
1.2
0.4
1.6
TJ = 25C to 125C
20
50 100
500
300 200
2316
MOTOROLA


PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 package which is designed for low power surface mount applications.
COLLECTOR 3
MMBT2907AWT1
1 BASE 2 EMITTER
1 2
MAXIMUM RATINGS
CASE 419 02, STYLE 3 SOT 323/SC 70
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT2907AWT1 = 2F

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 60 60 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
v 2.0%.
2317
MMBT2907AWT1
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc Vdc

Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF
TurnOn Time Delay Time Rise Time Storage Time Fall Time TurnOff Time 1. Pulse Test: Pulse Width (VCC = 6.0 Vd IC = 150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = 15 mAdc) (VCC = 30 Vd 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) 150 15 ton td tr ts tf toff 45 10 40 ns 80 30 100
2318
MOTOROLA

PNP Silicon
1 BASE
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 2907 40 60 5.0 600
2 EMITTER
1
2907A 60
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2907 MMBT2907A MMBT2907 MMBT2907A IB V(BR)CEO MMBT2907 MMBT2907A V(BR)CBO V(BR)EBO ICEX ICBO 0.020 0.010 20 10 50 nAdc 40 60 60 5.0 50 Vdc Vdc nAdc Adc Vdc
(VCB = 50 Vdc, IE = 0, TA = 125C) Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

2319
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 35 75 50 100 75 100 100 30 50 300 Vdc
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3) Collector Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

Current Gain Bandwidth Product (3),(4) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT 200 Cobo Cibo 30 8.0 pF pF MHz
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time (VCC = 6.0 Vd IC = 150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = 15 mAdc) 15 (VCC = 30 Vdc, IC = 150 mAdc, 30 Vd 150 Ad IB1 = 15 mAdc) 15 ton td tr toff ts tf 45 10 40 100 80 30 ns ns
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 30 V 200 ns
30 V 200
+15 V
6.0 V 37 TO OSCILLOSCOPE RISE TIME 5.0 ns
1.0 k 1.0 k 50
TO OSCILLOSCOPE RISE TIME 5.0 ns
1N916
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
2320
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.8 IC = 1.0 mA 0.6 10 mA 100 mA 500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2
2.0
3.0
5.0 7.0 10
20 30
50
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT tr
500 VCC = 30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V 200 300 500 10 7.0 5.0 5.0 7.0 10 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
2321
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, Rs = 430 500 A, Rs = 560 50 A, Rs = 2.7 k 100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0
6.0
6.0
4.0
4.0
IC = 50 A 100 A 500 A 1.0 mA
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)

30 20 C, CAPACITANCE (pF) Ceb
400 300 200
10 7.0 5.0 3.0 2.0 0.1 Ccb
100 80 60 40 30 20 1.0 2.0
VCE = 20 V TJ = 25C
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
5.0
10
20
50
100 200
500 1000
REVERSE VOLTAGE (VOLTS)
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = 10 V
+0.5 0 RqVC for VCE(sat) 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 0.5 1.0 2.0 RqVB for VBE
0.6
0.4
0.2
0 0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
5.0 10 20
50 100 200 500
2322
MOTOROLA
PNP Silicon
1 BASE
COLLECTOR 3
MMBT3640LT1
MAXIMUM RATINGS
2 EMITTER
1
DEVICE MARKING
MMBT3640LT1 = 2J

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, VBE = 0) (VCE = 6.0 Vdc, VBE = 0, TA = 65C) Base Cutoff Current (VCE = 6.0 Vdc, VEB = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES IB 0.01 1.0 10 nAdc 12 12 12 4.0 Vdc Vdc Vdc Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
2323
MMBT3640LT1
DC Current Gain (IC = 10 mAdc, VCE = 0.3 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 65C) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 30 20 VCE(sat) VBE(sat) 0.75 0.8 0.95 1.0 1.5 0.2 0.6 0.25 Vdc 120 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 500 Cobo Cibo 3.5 3.5 pF pF MHz
Delay Time Rise Time Storage Time Fall Time ( (VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = 5.0 mAdc) ( (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc) td tr ts tf ton toff 35 75 25 60 ns 10 ns 30 20 ns 12 ns
TurnOn Time (VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = 0.5 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = IB2 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = IB2 = 0.5 mAdc) 3. Pulse Test: Pulse Width
VBB = +1.9 V VCC = 6.0 V 1.0 k 0 0.1 F 680 110 Vout 5.0 V
VBB = 6.0 V 5.0 k 0.1 F 5.0 k
VCC = 1.5 V 130 Vout
Vin 6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 5.0 mA.
Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 0.5 mA.
Figure 1.
Figure 2.
2324
MMBT3640LT1
200 VCE = 1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 0.2 10 0.1 0.2 5.0 10 20 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 125C V, VOLTAGE (VOLTS) 25C 55C 1.4 1.2 1.0 0.8 VBE(on) @ VCE = 1.0 V 0.6 0.4 TJ = 25C VBE(sat) @ IC/IB = 10
1.0 TJ = 25C 0.8 IC = 1.0 mA 0.6 5.0 mA 20 mA 80 mA V, TEMPERATURE COEFFICIENT (mV/ C)
+0.5
*APPLIES FOR IC/IB hFE/4 RVC for VCE(sat)
25C to 125C
55C to 25C 0.5
0.4
1.0 25C to 125C RVB for VBE 2.0 0.1 0.2 55C to 25C 50 100
0.2
1.5
0 0.01 0.02
0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA)
2.0
5.0
10

2000 TJ = 25C f = 100 MHz 1000 800 600 400 1.0 V VCE = 10 V C, CAPACITANCE (pF)
5.0 TJ = 25C 3.0 2.0 Cobo Cibo 1.0 0.7
200 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.5 0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
2325
MOTOROLA

NPN Silicon
COLLECTOR 3 1 BASE
MMBT3904LT1
2 EMITTER
1 2
MAXIMUM RATINGS
DEVICE MARKING
MMBT3904LT1 = 1AM

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc

REV 1
2326
MMBT3904LT1
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 40 70 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k ohms X 10 4
mmhos
dB
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 ns 35 200 ns 50
2327
MMBT3904LT1
1.0 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2328
MMBT3904LT1
TIME (ns)
tr @ VCC = 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200

Figure 6. Rise Time
VCC = 40 V IB1 = IB2 IC/IB = 20
100 70 50 30 20 10 7 5 IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 8. Fall Time

IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
2329
MMBT3904LT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
h fe , CURRENT GAIN
200
20 10 5
100 70 50
2 1
30
0.1
0.2
0.1
0.2
5.0
10

2.0 1.0 0.5
0.2
0.1
0.2

2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2330
MMBT3904LT1
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0 0.5 +25C TO +125C
qVC FOR VCE(sat)

0 0.5 55C TO +25C 1.0 +25C TO +125C 1.5 2.0 55C TO +25C
qVB FOR VBE(sat)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2331
MOTOROLA

NPN and PNP Silicon
NPN MMBT3904WT1 PNP MMBT3906WT1

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO VCBO VEBO IC Value 40 40 60 40 6.0 5.0 200 200 Unit Vdc Vdc Vdc
3
Collector Current Continuous MMBT3904WT1 MMBT3906WT1
mAdc
1 2
Characteristic Total Device Dissipation(1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT3904WT1 = AM MMBT3906WT1 = 2A

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO MMBT3904WT1 MMBT3906WT1 V(BR)CBO MMBT3904WT1 MMBT3906WT1 V(BR)EBO MMBT3904WT1 MMBT3906WT1 IBL MMBT3904WT1 MMBT3906WT1 ICEX MMBT3904WT1 MMBT3906WT1 50 50 50 50 nAdc 6.0 5.0 nAdc 60 40 Vdc 40 40 Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2332

DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE MMBT3904WT1 40 70 100 60 30 60 80 100 60 30 VCE(sat) MMBT3904WT1 MMBT3906WT1 VBE(sat) MMBT3904WT1 MMBT3906WT1 0.65 0.65 0.85 0.95 0.85 0.95 0.2 0.3 0.25 0.4 Vdc 300 300 Vdc
MMBT3906WT1

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Small Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) fT MMBT3904WT1 MMBT3906WT1 Cobo MMBT3904WT1 MMBT3906WT1 Cibo MMBT3904WT1 MMBT3906WT1 hie MMBT3904WT1 MMBT3906WT1 hre MMBT3904WT1 MMBT3906WT1 hfe MMBT3904WT1 MMBT3906WT1 hoe MMBT3904WT1 MMBT3906WT1 NF MMBT3904WT1 MMBT3906WT1 5.0 4.0 1.0 3.0 40 60 dB 100 100 400 400 0.5 0.1 8.0 10 1.0 2.0 10 12 X 10 4 8.0 10.0 k 4.0 4.5 pF 300 250 pF MHz
mmhos
Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 td tr ts tf 35 35 35 35 200 225 50 75 ns
ns
2333

MMBT3904WT1
DUTY CYCLE = 2% 300 ns
+3 V +10.9 V 10 k 275
10 < t1 < 500 ms DUTY CYCLE = 2%
t1
+3 V +10.9 V 275 10 k
0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF*
TJ = 25C TJ = 125C 10 MMBT3904WT1 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MMBT3904WT1
1.0 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2334

MMBT3904WT1
500 300 200 100 70 50 30 20 10 7 5 MMBT3904WT1 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 10 7 5 200 1.0 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
40 V 15 V 2.0 V 50 70 100

500 300 200 t s, STORAGE TIME (ns) 100 70 50 30 20 10 7 5 1.0 MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 20 IC/IB = 10 ts = ts 1/8 tf IB1 = IB2 t f , FALL TIME (ns) 500 300 200
Figure 6. Rise Time
VCC = 40 V IB1 = IB2 IC/IB = 20
IC/IB = 20 IC/IB = 10
100 70 50 30 20 10 7 5 1.0 IC/IB = 10
MMBT3904WT1 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Figure 8. Fall Time

12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 14 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 MMBT3904WT1 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 MMBT3904WT1 20 40 100 IC = 1.0 mA
IC = 0.5 mA IC = 50 mA IC = 100 mA
f, FREQUENCY (kHz)
2335

MMBT3904WT1 h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) MMBT3904WT1 200 h fe , CURRENT GAIN 100 50 MMBT3904WT1
20 10 5
100 70 50
2 1
30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.1
0.2
5.0
10

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 MMBT3904WT1 10 7.0 5.0 3.0 2.0
MMBT3904WT1
2.0 1.0 0.5
0.2
0.1
0.2
5.0
10
2336

MMBT3904WT1 TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C MMBT3904WT1 VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA TJ = 25C
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MMBT3904WT1 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0 MMBT3904WT1 0.5 +25C TO +125C
qVC FOR VCE(sat)

0 0.5 55C TO +25C 1.0 +25C TO +125C 1.5 2.0 55C TO +25C
qVB FOR VBE(sat)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2337

MMBT3906WT1
3V + 9.1 V 275 < 1 ns 10 k CS < 4 pF* +10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 0 10 k 1N916 CS < 4 pF* < 1 ns 275 3V

TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) 5.0 Cobo Cibo 3.0 2.0 MMBT3906WT1 5000 3000 2000 Q, CHARGE (pC) 1000 700 500 300 200 QA 100 1.0 0.1 70 50 VCC = 40 V IC/IB = 10 QT MMBT3906WT1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500 300 200 100 TIME (ns) 70 50 30 20 10 7 5 tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) MMBT3906WT1 IC/IB = 10
500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 MMBT3906WT1 IC/IB = 20 VCC = 40 V IB1 = IB2
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 23. Turn On Time 2338
Figure 24. Fall Time Motorola SmallSignal Transistors, FETs and Diodes Device Data

MMBT3906WT1 TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
5.0 4.0 NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 12 f = 1.0 kHz 10 IC = 0.5 mA 8.0 6.0 4.0 2.0 MMBT3906WT1 20 40 100 0 0.1 0.2 0.4 IC = 50 mA IC = 100 mA MMBT3906WT1 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (k) 40 100 IC = 1.0 mA
3.0
1.0
SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz)
0 0.1
Figure 25.
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 MMBT3906WT1 200 hfe , CURRENT GAIN hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 MMBT3906WT1
100 70 50
10 7.0 5.0 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) MMBT3906WT1 10 h ie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 7.0 5.0 3.0 2.0
MMBT3906WT1
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
Figure 29. Input Impedance Motorola SmallSignal Transistors, FETs and Diodes Device Data

MMBT3906WT1 STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125C 1.0 0.7 0.5 0.3 MMBT3906WT1 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
1.0 MMBT3906WT1 0.8 IC = 1.0 mA 0.6 10 mA 30 mA 100 mA TJ = 25C
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C 0.8 V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V
1.0
1.0 0.5 0 0.5 1.0 1.5 2.0 MMBT3906WT1 +25C TO +125C
qVC FOR VCE(sat)
+25C TO +125C 55C TO +25C
0.6 MMBT3906WT1 0.4
qVS FOR VBE(sat)
55C TO +25C
0.2
0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200
20
40
180 200
2340
MOTOROLA

PNP Silicon
1 BASE
COLLECTOR 3
MMBT3906LT1
MAXIMUM RATINGS
2 EMITTER
1
DEVICE MARKING
MMBT3906LT1 = 2A

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width 300 s, Duty Cycle 2.0%.
V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 5.0 IBL ICEX 50 50
Vdc Vdc Vdc nAdc nAdc

REV 1
2341
MMBT3906LT1
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 60 80 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) fT 250 Cobo Cibo hie 2.0 hre 0.1 hfe 100 hoe 3.0 NF 4.0 60 dB 400 10 12 X 10 4 10 k 4.5 pF pF MHz
mmhos
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 ns 35 225 ns 75

3V
3V +9.1 V 275 < 1 ns 275 10 k 0 CS < 4 pF* 1N916 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V CS < 4 pF*
< 1 ns +0.5 V 10 k
10.6 V
300 ns DUTY CYCLE = 2%
2342
MMBT3906LT1
QT QA
1.0 0.1
0.2 0.3
20 30 40
1.0
2.0 3.0
200
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200

VCC = 40 V IB1 = IB2 IC/IB = 20 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10
TIME (ns)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 6. Fall Time
2343
MMBT3906LT1
4.0
3.0
1.0
0 0.1
0.1
0.2
40
100
Figure 7.
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
200
100 70 50
10 7
30
0.1
0.2
5.0 7.0 10
0.1
0.2
5.0 7.0 10

0.1
0.2
5.0 7.0 10
2344
MMBT3906LT1
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200

0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10

qVC FOR VCE(sat)
+25C TO +125C
0.6
55C TO +25C
0.2
qVB FOR VBE(sat)
1.0
2.0
100
200
20
40
160
180 200
2345
MOTOROLA
NPN Silicon
COLLECTOR 3 1 BASE
MMBT4401LT1
MAXIMUM RATINGS
1 2
DEVICE MARKING
MMBT4401LT1 = 2X

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV ICEX 0.1 0.1 Adc Adc Vdc Vdc Vdc

2346
MMBT4401LT1
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 20 40 80 100 40 VCE(sat) VBE(sat) 0.75 0.95 1.2 0.4 0.75 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT 250 Ccb Ceb hie 1.0 hre 0.1 hfe 40 hoe 1.0 30 500 8.0 15 X 10 4 30 k 6.5 pF pF MHz
mmhos
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 ns 20 225 ns 30

+ 30 V +16 V 0 2.0 V 1.0 to 100 s, DUTY CYCLE 2.0% 1.0 k < 2.0 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1.0 k CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
2347
MMBT4401LT1
25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT
VCC = 30 V IC/IB = 10
QA
100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10
100 70 tr 50 30 20 tf VCC = 30 V IC/IB = 10
Figure 6. Rise and Fall Times
300 200 t s, STORAGE TIME (ns) ts = ts 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)
100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2
100 70 50
10 7.0
30
5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
2348
MMBT4401LT1
10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA
8.0 NF, NOISE FIGURE (dB)
6.0
6.0
4.0
4.0
2.0 0 0.01 0.02 0.05 0.1 0.2
2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from the MMBT4401LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondingly numbered curves hfe and other h parameters for this series of transistors. To on each graph. obtain these curves, a highgain and a lowgain unit were
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
20 k 10 k 5.0 k
100 70 50 30 20 0.1 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
2.0 k 1.0 k 500
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10

10 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50
MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
20 10 5.0 2.0 1.0 0.1 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
Figure 14. Output Admittance 2349
MMBT4401LT1
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 25C 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0 0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
2.0
3.0
5.0 7.0
10
20
30
50
1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)
+ 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2
qVC for VCE(sat)
0.6
VBE @ VCE = 10 V
0.4
0.2
qVB for VBE

0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500
0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500
2350
MOTOROLA
PNP Silicon
1 BASE
COLLECTOR 3
MMBT4403LT1
MAXIMUM RATINGS
2 EMITTER
1
DEVICE MARKING
MMBT4403LT1 = 2T

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 5.0 IBEV ICEX 0.1 0.1 Adc Adc Vdc Vdc Vdc

2351
MMBT4403LT1
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(3) (IC = 500 mAdc, VCE = 2.0 Vdc)(3) Collector Emitter Saturation Voltage(3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 30 60 100 100 20 VCE(sat) VBE(sat) 0.75 0.95 1.3 0.4 0.75 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VBE = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT 200 Ccb Ceb hie 1.5 hre 0.1 hfe 60 hoe 1.0 100 500 8.0 15 X 10 4 30 k 8.5 pF pF MHz
mmhos
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 ns 20 225 ns 30

30 V < 2 ns +2 V 0 1.0 k 16 V 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 1.0 k 16 V CS* < 10 pF < 20 ns 30 V 200
1.0 to 100 s, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
2352
MMBT4403LT1
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
100 70 50 30 20 VCC = 30 V IC/IB = 10
Figure 6. Rise Time
10
20
30
50
70
100
200
300
500
2353
MMBT4403LT1
IC = 50 A 100 A 500 A 1.0 mA
0 0.01 0.02 0.05 0.1 0.2
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from the MMBT4403LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondinglynumbered curves hfe and other h parameters for this series of transistors. To on each graph. obtain these curves, a highgain and a lowgain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2
100 70 50

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2
MMBT4403LT1
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 0.8
0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA
0.2
0 0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
2.0
3.0
5.0
7.0
10
20
30
50
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
qVC for VCE(sat)
0.6
0.4
0.2
qVS for VBE

2355
MOTOROLA

PNP Silicon
MMBT5087LT1
3 1 2
MAXIMUM RATINGS
DEVICE MARKING
MMBT5087LT1 = 2Q

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) (VCB = 35 Vdc, IE = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO ICBO 10 50 50 50 Vdc Vdc nAdc
2356
MMBT5087LT1
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) BaseEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 250 250 250 VCE(sat) VBE(sat) 800 0.3 0.85 Vdc Vdc
CurrentGain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 3.0 k, f = 1.0 kHz) fT Cobo hfe NF 2.0 2.0 40 250 4.0 900 MHz pF dB
2357
MMBT5087LT1
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
MMBT5087LT1
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2359
MMBT5087LT1
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 16 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
2360
MMBT5087LT1

4 0
2 0
2361
MOTOROLA

NPN Silicon
1 BASE
COLLECTOR 3
MMBT5088LT1 MMBT5089LT1*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50
2 EMITTER
1
5089LT1 25 30
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 ICBO MMBT5088 MMBT5089 IEBO MMBT5088 MMBT5089 50 100 50 50 nAdc 35 30 nAdc 30 25 Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2362
MMBT5088LT1 MMBT5089LT1
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCE(sat) VBE(sat) 0.8 0.5 Vdc 300 400 350 450 300 400 900 1200 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)

Current Gain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) MMBT5088 MMBT5089 NF MMBT5088 MMBT5089 3.0 2.0 fT 50 Ccb Ceb hfe 350 450 1400 1800 dB 10 4.0 pF pF MHz
RS
in en
IDEAL TRANSISTOR
2363
10 7.0 5.0
100 kHz 5.0 10

8.0

IC = 10 mA
3.0 mA 1.0 mA 300 A
12
2364
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
0.4 0.8
0.6
VBE @ VCE = 5.0 V
1.2
0.4
1.6
TJ = 25C to 125C
20
50 100
500
300 200
2365
MOTOROLA

PNP Silicon
1 BASE
COLLECTOR 3
MMBT5401LT1
2 EMITTER
1 2
MAXIMUM RATINGS
DEVICE MARKING
MMBT5401LT1 = 2L

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 150 V(BR)CBO 160 V(BR)EBO 5.0 ICES 50 50 nAdc Adc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2366
MMBT5401LT1
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 50 60 50 VCE(sat) VBE(sat) 1.0 1.0 0.2 0.5 Vdc 240 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 10 , f = 1.0 kHz) fT 100 Cobo hfe 40 NF 8.0 200 dB 6.0 300 pF MHz
2367
MMBT5401LT1
0.2
0.6
0.7
2368
MMBT5401LT1
0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = 55C to 135C
C, CAPACITANCE (pF)
VBB + 8.8 V
VCC 30 V
100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
0.3
10
20
1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20
td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50
10 0.2 0.3 0.5
2369
MOTOROLA

NPN Silicon
1 BASE
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
MAXIMUM RATINGS

1 2
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
V(BR)CEO MMBT5550 MMBT5551 V(BR)CBO MMBT5550 MMBT5551 V(BR)EBO 6.0 ICBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 IEBO 50 100 50 100 50 160 180 140 160
Vdc
Vdc
Vdc
nAdc Adc nAdc

2370
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VCE(sat) Both Types MMBT5550 MMBT5551 VBE(sat) Both Types MMBT5550 MMBT5551 1.0 1.2 1.0 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 250 250 Vdc
2371
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 101 102 103 104 105 0.4 TJ = 125C V, VOLTAGE (VOLTS)
1.0
TJ = 25C
0.8 IC = ICES VBE(sat) @ IC/IB = 10 0.6
0.4
0.2 VCE(sat) @ IC/IB = 10 0
0.3
0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
100
2372
2.5 V, TEMPERATURE COEFFICIENT (mV/ C) 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F VBB 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout TJ = 55C to +135C
qVC for VCE(sat)
qVB for VBE(sat)
100 70 50 30 C, CAPACITANCE (pF)
1000 TJ = 25C 500 300 t, TIME (ns) 200 100 50 Cobo 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V
20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
1.0
50
100
200
5000 3000 2000 tf @ VCC = 30 V 1000 t, TIME (ns) 500 300 200 100 50 0.2 0.3 0.5 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
100
200
2373
MOTOROLA
Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 1
MMBT6427LT1
EMITTER 2
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBT6427LT1 = 1V

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 12 ICES ICBO IEBO 50 50 nAdc 1.0 nAdc Adc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2374
MMBT6427LT1
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 14,000 VCE(sat)(3) VBE(sat) VBE(on) 1.75 2.0 Vdc 1.2 1.5 Vdc 100,000 200,000 140,000 Vdc

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Current Gain High Frequency (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Cobo Cibo |hfe| 1.3 NF 10 dB 15 Vdc 7.0 pF pF
RS
in en
IDEAL TRANSISTOR
2375
MMBT6427LT1
(VCE = 5.0 Vdc, TA = 25C)
IC = 1.0 mA
200
100 70 50 30 20
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2376
MMBT6427LT1
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.0
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
6.0 5.0 7.0 10
500
2377
MMBT6427LT1
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
FIGURE A tP PP PP
2378
MOTOROLA
NPN Silicon
1 BASE
COLLECTOR 3
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT6428 MMBT6429 V(BR)CBO MMBT6428 MMBT6429 ICES ICBO IEBO 0.01 0.01 Adc 0.1 Adc 60 55 Adc 50 45 Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2379
ON CHARACTERISTICS
DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) VBE(on) 0.56 0.66 0.2 0.6 Vdc 250 500 250 500 250 500 250 500 650 1250 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)

Current Gain Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 100 Cobo Cibo 8.0 3.0 pF 700 pF MHz
RS
in en
IDEAL TRANSISTOR
2380
10 7.0 5.0
100 kHz 5.0 10

8.0

IC = 10 mA
3.0 mA 1.0 mA 300 A
12
2381
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
0.4 0.8
0.6
VBE @ VCE = 5.0 V
1.2
0.4
1.6
TJ = 25C to 125C
20
50 100
500
300 200
2382
MOTOROLA

NPN Silicon
COLLECTOR 3 1 BASE
MMBT6517LT1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Base Current Collector Current Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500
2 EMITTER Unit Vdc Vdc Vdc mAdc mAdc
1 2
DEVICE MARKING
MMBT6517LT1 = 1Z

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector Base Breakdown Voltage (IC = 100 mAdc) Emitter Base Breakdown Voltage (IE = 10 mAdc) Collector Cutoff Current (VCB = 250 Vdc) Emitter Cutoff Current (VEB = 5.0 Vdc) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 350 V(BR)CBO 350 V(BR)EBO 6.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
2383
MMBT6517LT1
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 30 30 20 15 VCE(sat) VBE(sat) VBE(on) 2.0 0.75 0.85 0.90 Vdc 0.30 0.35 0.50 1.0 Vdc 200 200 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, f = 1.0 MHz) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT 40 Ccb Ceb 80 6.0 pF 200 pF MHz
2384
MMBT6517LT1
200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 55C 30 20 25C TJ = 125C f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
10 1.0
2.0
50 70 100
10 1.0
2.0
50 70
100
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) IC IB
+ 10
25C to 125C
0.5 1.0 1.5 2.0 2.5 1.0
55C to 25C
2.0
50
70
100
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb
TJ = 25C
Ccb
0.5
50 100 200
2385
MMBT6517LT1
1.0 k 700 500 300 200 t, TIME (ns) tr 100 70 50 30 20 10 1.0 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C t, TIME (ns) 10 k 7.0 k 5.0 k 3.0 k 2.0 k 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C ts
2.0
50
70 100
2.0 3.0
50
70 100
+10.8 V
20 k
50 SAMPLING SCOPE
RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
0.05
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
2386
MMBT6517LT1
FIGURE A tP PP PP
2387
MOTOROLA

PNP Silicon
COLLECTOR 3 1 BASE
MMBT6520LT1
2 EMITTER
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Base Current Collector Current Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mA mAdc
DEVICE MARKING
MMBT6520LT1 = 2Z

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mA) CollectorBase Breakdown Voltage (IC = 100 A) EmitterBase Breakdown Voltage (IE = 10 A) Collector Cutoff Current (VCB = 250 V) Emitter Cutoff Current (VEB = 4.0 V) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 350 350 5.0 50 50 Vdc Vdc Vdc nA nA
2388
MMBT6520LT1
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) BaseEmitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) BaseEmitter On Voltage (IC = 100 mA, VCE = 10 V) hFE 20 30 30 20 15 VCE(sat) VBE(sat) VBE(on) 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 200 200 Vdc
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) CollectorBase Capacitance (VCB= 20 V, f = 1.0 MHz) EmitterBase Capacitance (VEB= 0.5 V, f = 1.0 MHz) fT Ccb Ceb 40 200 6.0 100 MHz pF pF
2389
MMBT6520LT1
200 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) VCE = 10 V TJ = 125C 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
100 70
25C
55C 50
30 20
30 20 1.0
2.0
3.0
50
70 100
10 1.0
2.0
50 70
100
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) IC IB
+ 10
25C to 125C
0.5 1.0 1.5 2.0 2.5 1.0
55C to 25C
2.0
50
70
100
100 70 50 C, CAPACITANCE (pF) 30 20 Ceb
TJ = 25C
1.0 k 700 500 300 200 t, TIME (ns)
VCE(off) = 100 V IC/IB = 5.0 TJ = 25C
tr 100 70 50 30 20 10 1.0
10 7.0 5.0 3.0 2.0 1.0 0.2
Ccb
0.5
50 100 200
2.0
50
70 100
2390
MMBT6520LT1
10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C ts
2.0 3.0
50
70 100
+10.8 V
20 k
50 SAMPLING SCOPE
1.0 0.7 0.5 0.3 0.2
0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1
0.05
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
2391
MMBT6520LT1
FIGURE A tP PP PP
2392
MOTOROLA
Driver Transistors
NPN Silicon
COLLECTOR 3 1 BASE
MMBTA05LT1 MMBTA06LT1*
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MMBTA05 60 60 4.0 500 MMBTA06 80 80 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. MMBTA05 MMBTA06 V(BR)CEO MMBTA05 MMBTA06 V(BR)EBO ICES ICBO 0.1 0.1 60 80 4.0 0.1 Vdc Vdc
mAdc mAdc

2393
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) 0.25 1.2 Vdc Vdc

Current Gain Bandwidth Product(4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 4. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 100 MHz
2394
MOTOROLA
Darlington Amplifier Transistors

NPN Silicon
COLLECTOR 3 BASE 1
MMBTA13LT1 MMBTA14LT1*
3 1 2
EMITTER 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
0.062 in. 0.024 in. 99.5% alumina.
2395
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 VCE(sat) VBE 5000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)

Current Gain Bandwidth Product(4) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 4. fT = |hfe| ftest. fT 125 MHz
RS
in en
IDEAL TRANSISTOR
2396
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA)
2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2397
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN
4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.0
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
6.0 5.0 7.0 10
500
2398
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
2399
MOTOROLA
General Purpose Amplifier

NPN Silicon
COLLECTOR 3 1 BASE
MMBTA20LT1
3 1
2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc
DEVICE MARKING
MMBTA20LT1 = 1C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
0.062 in. 0.024 in. 99.5% alumina.
2400
MMBTA20LT1
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc

Current Gain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 125 4.0 MHz pF

10 < t1 < 500 s DUTY CYCLE = 2%
2401
MMBTA20LT1
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
MMBTA20LT1
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 MPS390 VCE = 1.0 V 4 VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) MPS3904 TJ = 25C
100
0.8 IC = 1.0 mA 10 mA 50 mA
IB = 500 A 400 A 300 A
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2403
MMBTA20LT1
t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3904 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3904 hfe 200 @ IC = 1.0 mA
2404
MMBTA20LT1
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

4 0
2 0
Figure 19A.
100 s 10 s 1.0 s
dc
40
Figure 20.
2405
MOTOROLA

NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC MMBTA42 300 300 6.0 500 MMBTA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc
* MMBTA42LT1 MMBTA43LT1
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
V(BR)CEO MMBTA42 MMBTA43 V(BR)CBO MMBTA42 MMBTA43 V(BR)EBO ICBO MMBTA42 MMBTA43 IEBO MMBTA42 MMBTA43 0.1 0.1 0.1 0.1 300 200 6.0 300 200
Vdc
Vdc
Vdc Adc
Adc
2406
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MMBTA42 MMBTA43 VCE(sat) MMBTA42 MMBTA43 VBE(sat) 0.5 0.5 0.9 Vdc 25 40 40 40 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width MMBTA42 MMBTA43 fT Ccb 3.0 4.0 50 MHz pF
2407
100
25C 50 55C 30 20 1.0
2.0
3.0
5.0
20
30
50
70
100
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
2.0 1.0 0.2
100
200
10 1.0
2.0
50
70 100
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2408
MOTOROLA
Driver Transistors
PNP Silicon
1 BASE
COLLECTOR 3
MMBTA55LT1 * MMBTA56LT1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MMBTA55 60 60 4.0 500 80 80
2 EMITTER MMBTA56 Unit Vdc Vdc Vdc mAdc

1 2
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Symbol 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

Characteristic Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO V(BR)EBO ICES ICBO 60 80 4.0 0.1 0.1 0.1 Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE VCE(sat) VBE(on) fT 100 100 0.25 1.2 Vdc Vdc

Current Gain Bandwidth Product(4) (IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz) 1. 2. 3. 4. FR5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT is defined as the frequency at which |hfe| extrapolates to unity. 50 MHz
2409
MOTOROLA
PNP Silicon
COLLECTOR 3 BASE 1
MMBTA63LT1 MMBTA64LT1 *
EMITTER 2
3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 500 Unit Vdc Vdc Vdc mAdc
1 2
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Characteristic Symbol 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc) Collector Cutoff Current (VCB = 30 Vdc) Emitter Cutoff Current (VEB = 10 Vdc) V(BR)CEO ICBO IEBO hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 VCE(sat) VBE(on) fT 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc 30 100 100 Vdc nAdc nAdc
ON CHARACTERISTICS
DC Current Gain(3) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc)
Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
125
MHz
2410
200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 10 V 25C VCE = 2.0 V 5.0 V TA = 125C
55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0 TA = 25C 1.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 100
2.0 TA = 25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.10.2 0.5 1 2 5 10 20 50 100200500 1K2K 5K10K IB, BASE CURRENT (A) IC = 10 mA 50 mA 100 mA 175 mA 300 mA
0 0.3 0.5
1.0
100 200 300
4.0 3.0 2.0 1.0 0.4 0.2
0.1 1.0 2.0
5.0
10
20
50
100 200
500
1K
2411
MOTOROLA

PNP Silicon
1 BASE
COLLECTOR 3
MMBTA70LT1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 40 4.0 100
2 EMITTER
1
Unit Vdc Vdc mAdc
DEVICE MARKING
MMBTA70LT1 = M2C
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg Symbol 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

Characteristic Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc
CurrentGain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. fT Cobo 125 4.0 MHz pF
2412
MMBTA70LT1
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband Motorola SmallSignal Transistors, FETs and Diodes Device Data 2413
MMBTA70LT1
400
TJ = 125C 25C
200
100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2414
MMBTA70LT1
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
2415
MMBTA70LT1
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

4 0
2 0
2416
MOTOROLA

PNP Silicon
1 BASE
COLLECTOR 3
* MMBTA92LT1 MMBTA93LT1
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MMBTA92 300 300 5.0 500 MMBTA93 200 200 5.0 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
V(BR)CEO MMBTA92 MMBTA93 V(BR)CBO MMBTA92 MMBTA93 V(BR)EBO ICBO MMBTA92 MMBTA93 IEBO 0.25 0.25 0.1 300 200 5.0 300 200
Vdc
Vdc
Vdc Adc
Adc
2417
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MMBTA92 MMBTA93 VCE(sat) MMBTA92 MMBTA93 VBE(sat) 0.5 0.5 0.9 Vdc 25 40 25 25 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width MMBTA92 MMBTA93 fT Ccb 6.0 8.0 50 MHz pF
2418
30 20 15 1.0 2.0 3.0 5.0 7.0 10 20 30 50 80 100
100 80 60 40 30 20 TJ = 25C VCE = 20 Vdc
0 1.0
2.0
50
100
1.0
0.4
0.2
0 1.0
2.0
50
100
2419
MOTOROLA
VHF/UHF Transistor
MMBTH10LT1
COLLECTOR 3 1 BASE
3
NPN Silicon
2 EMITTER
1 2
CASE 318-08, STYLE 6 SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc
DEVICE MARKING
MMBTH10LT1 = 3EM
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

Characteristic OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit
2420
MMBTH10LT1
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) BaseEmitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) CommonBase Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) fT Ccb Crb rbCc 650 0.7 0.65 9.0 MHz pF pF ps hFE VCE(sat) VBE 60 0.5 0.95 Vdc Vdc Symbol Min Typ Max Unit
2421
MMBTH10LT1
COMMONBASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yib, INPUT ADMITTANCE
80 y ib , INPUT ADMITTANCE (mmhos) 70 60 bib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 50 60 20 1000 MHz 30 40 700 400 200 100 gib 0 10
10
20
30
40 50 gib (mmhos)
60
70
80
Figure 1. Rectangular Form
Figure 2. Polar Form
yfb, FORWARD TRANSFER ADMITTANCE

y ib , FORWARD TRANSFER ADMITTANCE (mmhos) 70 60 50 40 30 20 10 0 10 20 30 10 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 70 60 50 40 10 30 20 gfb (mmhos) 0 10 20 30 20 jb fb (mmhos) gfb 40 bfb 50 100 60 200 400 600 700
30 1000 MHz
2422
MMBTH10LT1
COMMONBASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yrb, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 0 100 4.0 MPS H11 3.0 brb 2.0 MPS H10 4.0 grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 5.0 2.0 1.8 1.2 0.8 1000 MHz 0.4 0 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 brb 1.0 jb rb (mmhos) 200
2.0
400
3.0 700
1.0
Figure 5. Rectangular Form yob, OUTPUT ADMITTANCE

10 yob, OUTPUT ADMITTANCE (mmhos) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 gob 0 0 2.0 2.0 100 bob jb ob(mmhos) 6.0 8.0 700 10
1000 MHz
4.0
400 200
4.0 6.0 gob (mmhos)
8.0
10
2423
MOTOROLA
VHF Mixer Transistor

NPN Silicon
Designed for fT = 400 MHz Min @ 8 mA
1 BASE COLLECTOR 3
MMBTH24LT1
2 EMITTER
1 2
MAXIMUM RATINGS
DEVICE MARKING
MMBTH24LT1 = M3A

Characteristic OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO 30 40 4.0 50 Vdc Vdc Vdc nAdc Symbol Min Typ Max Unit
2424
MMBTH24LT1
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product(3) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Conversion Gain (213 MHz to 45 MHz) (IC= 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) (60 MHz to 45 MHz) (IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Ccb 400 19 CG 24 20 620 0.25 24 0.45 MHz pF dB hFE 30 Symbol Min Typ Max Unit
2425
MOTOROLA
UHF/VHF Transistor
PNP Silicon
Designed for UHF/VHF Amplifier Applications High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA
1 BASE
COLLECTOR 3
MMBTH69LT1
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Symbol VCEO VCBO VEBO Value 15 15 4.0 Unit Vdc Vdc Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
DEVICE MARKING
MMBTH69LT1 = M3J

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 15 4.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) hFE 30 300
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCE = 10 Vdc, IE = 0, f = 1.0 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
fT Crb
2000
0.35
MHz pF
2426
MOTOROLA
UHF/VHF Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBTH81LT1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Symbol VCEO VCBO VEBO Value 20 20 3.0
2 EMITTER
1
Unit Vdc Vdc Vdc
DEVICE MARKING
MMBTH81LT1 = 3D
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg Symbol Min 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

Characteristic Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 20 20 3.0 100 100 Vdc Vdc Vdc nAdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 5.0 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 5.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 0.5 0.9 Vdc Vdc
CurrentGain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) CollectorEmitter Capacitance (IB = 0, VCB = 10 Vdc, f = 1.0 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
fT Ccb Cce
600
0.85 0.65
MHz pF pF
2427
MOTOROLA
Quad General Purpose Transistors

NPN Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ2222 * MMPQ2222A
16
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.52 4.2 PD 0.8 6.4 TJ, Tstg 2.4 19.2 55 to +150 1.0 8.0 MMPQ2222 30 60 5.0 500 Four Transistors Equal Power Watts mW/C Watts mW/C C MMPQ2222A 40 75 Unit Vdc Vdc Vdc mAdc
CASE 751B05, STYLE 4 SO16

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2222 MMPQ2222A IEBO MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 10 100 nAdc 30 40 60 75 5.0 Vdc Vdc Vdc nAdc
REV 1
2428
MMPQ2222 MMPQ2222A
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 300 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMPQ2222A MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222A VCE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A VBE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 35 50 75 75 100 100 30 40 50 300 Vdc
Current Gain Bandwidth Product(1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 350 4.5 17 MHz pF pF
TurnOn Time (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton 25 ns
toff
250
ns
2429
MOTOROLA
Quad Switching Transistor

NPN Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ2369
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 55 to +150 0.72 6.4 Value 15 40 4.5 500 Four Transistors Equal Power Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 40 4.5 0.4 Vdc Vdc Vdc
mAdc
2430
MMPQ2369
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 20 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 450 550 2.5 3.0 4.0 5.0 MHz pF pF
TurnOn Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 1. Pulse Test: Pulse Width ton 9.0 ns
toff
15
ns
2431
MOTOROLA

PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ2907 MMPQ2907A
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.52 4.2 0.8 6.4 MMPQ2907 40 60 5.0 600 Four Transistors Equal Power 1.0 8.0 2.4 19.2 55 to +150 Watts mW/C Watts mW/C C MMPQ2907A 60 Unit Vdc Vdc Vdc mAdc

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2907 MMPQ2907A IEBO MMPQ2907 MMPQ2907A V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 10 50 nAdc 40 60 60 5.0 Vdc Vdc Vdc nAdc
v 300 ms, Duty Cycle = 2.0%.
REV 1
2432
MMPQ2907 MMPQ2907A
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 Adc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMPQ2907A MMPQ2907A MMPQ2907/2907A MMPQ2907/2907A MMPQ2907/2907A MMPQ2907/2907A VCE(sat) MMPQ2907 MMPQ2907 MMPQ2907 VBE(sat) MMPQ2907 MMPQ2907 MMPQ2907A 1.3 2.6 2.6 0.4 1.6 1.6 Vdc 75 100 75/100 100 30/50 50 300 Vdc
Current Gain Bandwidth Product(1) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 350 6.0 20 MHz pF pF
TurnOn Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton toff 30 100 ns ns
2433
MOTOROLA
Quad Memory Driver Transistor

PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ3467
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25C Derate above 25C Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.52 4.2 1.0 8.0 Value 40 40 5.0 1.0 Four Transistors Equal Power 1.2 9.6 2.5 20 55 to +150 Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc Adc

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 200 200 Vdc Vdc Vdc nAdc nAdc
REV 2
2434
MMPQ3467
ON CHARACTERISTICS
DC Current Gain(1) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) 20 0.23 0.9 0.5 1.2 Vdc Vdc
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 190 10 55 MHz pF pF
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 1. Pulse Test: Pulse Width ton toff 20 60 ns ns
2435
MOTOROLA
Quad Core Driver Transistor

NPN Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ3725
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Operating and Storage Junction Temperature Range Symbol VCEO VCES VEB IC TJ, Tstg Value 40 60 5.0 1.0 55 to +150 Four Transistors Equal Power 1.4 11.2 2.5 2.0 55 to +150 Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc Adc C
Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.6 4.8 1.0 8.0

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)EBO ICBO 40 60 5.0 0.5 Vdc Vdc Vdc
mAdc
REV 1
2436
MMPQ3725
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 25 VCE(sat) VBE(sat) 0.8 75 45 0.32 0.9 200 0.45 1.1 Vdc Vdc
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 275 5.1 62 MHz pF pF
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = 3.8 Vdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 1. Pulse Test: Pulse Width ton toff 20 50 ns ns
2437
MOTOROLA

Quad Amplifier/Switch Transistor
NPN Silicon
MMPQ3904
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 55 to +150 800 6.4 mW mW/C Watts mW/C C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 1
2438
MMPQ3904
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 75 VCE(sat) VBE(sat) 90 160 200 0.1 0.65 0.2 0.85 Vdc Vdc
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 250 300 2.0 4.0 4.0 8.0 MHz pF pF
TurnOn Time (IC = 10 Vdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc) TurnOff Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff 37 136 ns ns
2439
MOTOROLA

Quad Amplifier/Switch Transistor MMPQ3906
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
PNP Silicon
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25C Derate above 25C Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.4 3.2 0.66 5.3 Value 40 40 5.0 200 Four Transistors Equal Power 800 6.4 1.92 15.4 55 to +150 mW mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc

OFF CHARACTERISTICS
REV 1
2440
MMPQ3906
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 250 3.3 4.8 4.5 10 MHz pF pF
TurnOn Time (IC = 10 mAdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc) TurnOff Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff 43 155 ns ns
2441
MOTOROLA
Quad Complementary Pair Transistor

PNP/NPN Silicon
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
MMPQ6700
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.4 3.2 0.66 5.3 Value 40 40 5.0 200 Four Transistors Equal Power 0.72 6.4 1.92 15.4 55 to +150 Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc
1 16

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 35 50 70 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc
Current Gain Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width PNP NPN fT Cob Cib 10 8.0 200 4.5 MHz pF pF
2442
MOTOROLA
Quad MPU Clock Buffer Transistor

NPN/PNP Silicon
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
MMPQ6842
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 55 to +150 0.72 6.4 Value 30 30 4.0 200 Four Transistors Equal Power Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 30 4.0 50 50 Vdc Vdc Vdc nAdc nAdc
2443
MMPQ6842
DC Current Gain (IC = 0.5 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc, 0C Base Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc) hFE 30 50 70 0.05 0.65 0.15 0.9 Vdc Vdc
v T v 70C)
VCE(sat) VBE(sat)
Current Gain Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP NPN fT Cob Cib 5.0 4.0 10 8.0 200 350 3.0 4.5 MHz pF pF
SWITCHING CHARACTERISTICS (TA = 25C, VCC = 5.0 Vdc)

Propagation Delay Time (50% Points TP1 to TP3) (50% Points TP2 to TP4) Rise Time (0.3 V to 4.7 V, TP3 or TP4) Fall Time (4.7 V to 0.3 V, TP3 or TP4) 1. Pulse Test: Pulse Width ns tPLH tPHL tr tf 5.0 5.0 15 6.0 25 10 25 15 35 20 ns ns
2444
MOTOROLA
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of PIN 1 damage to the die. BASE Available in 8 mm embossed tape and reel. Use the (INPUT) Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD R1 R2 PIN 3 COLLECTOR (OUTPUT)
MMUN2111LT1 SERIES
PNP SILICON BIAS RESISTOR TRANSISTOR
3 1 2
PIN 2 EMITTER (GROUND)
Value 50 50 100 *200 1.6
Unit Vdc Vdc mAdc mW mW/C
Rating Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RJA TJ, Tstg TL Value 625 65 to +150 260 10 Unit C/W C C Sec
DEVICE MARKING AND RESISTOR VALUES

Device MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1(2) Marking A6A A6B A6C A6D A6E R1 (K) 10 22 47 10 10 R2 (K) 10 22 47 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
(Replaces MMUN2111T1/D)
2445
MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device MMUN2116LT1(2) MMUN2130LT1(2) MMUN2131LT1(2) MMUN2132LT1(2) MMUN2133LT1(2) MMUN2134LT1(2) Marking A6F A6G A6H A6J A6K A6L R1 (K) 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 1.0 2.2 4.7 47 47

OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
2. New devices. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2446
MMUN2111LT1 SERIES
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185
Resistor Ratio MMUN2111LT1/MMUN2112LT1/MMUN2113LT1 MMUN2114LT1 MMUN2115LT1/MMUN2116LT1 MMUN2130LT1/MMUN2131LT1/MMUN2132LT1 MMUN2133LT1
R1/R2
2447
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 TA = 25C 75C 0.1
200
25C
150
100 RJA = 625C/W
50
0 50
50
100
150
TA, AMBIENT TEMPERATURE (C)
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC

4 VCE = 10 V 3 f = 1 MHz lE = 0 V TA = 25C
1000 h FE, DC CURRENT GAIN (NORMALIZED)
100
TA = 75C 25C 25C
Cob , CAPACITANCE (pF) 100
10
10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS)
50
100 75C IC , COLLECTOR CURRENT (mA) 10
25C TA = 25C
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS)
10
TA = 25C 25C 75C
0.1
0.01 0.001 0 1 2
VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50
2448
MMUN2111LT1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = 25C 25C 1 75C h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
TA = 75C 25C 100 25C
0.1
0.01
10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 100
4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100
75C
25C TA = 25C
Cob , CAPACITANCE (pF)
10
0.1 VO = 5 V
0.01 0 1 2 3 4 5 6 7
50
0.001
10
Vin, INPUT VOLTAGE (VOLTS)
100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = 25C 10 75C 25C
0.1
10
20
30
40
50
2449
MMUN2111LT1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 h FE , CURRENT GAIN (NORMALIZED)
TA = 75C 25C 25C 100
TA = 25C 75C 0.1
25C
0.01
40
10
100
1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
0.8 Cob , CAPACITANCE (pF)
10 1
0.6
0.4
0.1
0.2
0.01 VO = 5 V
50
0.001
10
100 VO = 2 V Vin , INPUT VOLTAGE (VOLTS) TA = 25C 10 25C 75C
0.1
10
40
50
2450
MMUN2111LT1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C 25C
10
VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = 25C 25C 75C 1
+12 V
LOAD 0.1
10
40
50
2451
MOTOROLA
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD R1 PIN 3 COLLECTOR (OUTPUT)
MMUN2211LT1 SERIES
NPN SILICON BIAS RESISTOR TRANSISTOR
3 1
PIN 1 R2 BASE (INPUT) PIN 2 EMITTER (GROUND)
Value 50 50 100 *200 1.6
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 625 65 to +150 260 10 C/W C C Sec

Device MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1(2) MMUN2216LT1(2) MMUN2230LT1(2) MMUN2231LT1(2) MMUN2232LT1(2) MMUN2233LT1(2) MMUN2234LT1(2) Marking A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L R1 (K) 10 22 47 10 10 4.7 1 2.2 22 4.7 4.7 22 R2 (K) 10 22 47 47 1 2.2 22 4.7 47 47
(Replaces MMUN2211T1/D)
2452
MMUN2211LT1 SERIES
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
V(BR)CBO V(BR)CEO
Vdc Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 350 350 5.0 15 30 200 150 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2213LT1
VCE(sat)
VOL VOH 4.9 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k )
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
Vdc
2453
MMUN2211LT1 SERIES
Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56 k
Resistor Ratio
R1/R2
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
2454
MMUN2211LT1 SERIES
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 75C
200
0.1
150
100 RJA = 625C/W
0.01
50
50
0 50 100 TA, AMBIENT TEMPERATURE (C)
150
0.001
80
1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V Cob , CAPACITANCE (pF) TA = 75C 25C 25C 100
4 f = 1 MHz lE = 0 V TA = 25C
10
100
50
100 75C IC , COLLECTOR CURRENT (mA)
25C TA = 25C
10 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = 25C 25C 75C 1
10
0.1
0.01 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0.001
0.1
10
50
2455
MMUN2211LT1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 75C h FE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 25C 100
0.1
0.01
0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80
10 1 10 IC, COLLECTOR CURRENT (mA) 100
4 f = 1 MHz lE = 0 V TA = 25C
100
75C
25C TA = 25C
IC , COLLECTOR CURRENT (mA)
10
0.1
0.01 VO = 5 V 0 2 4 6 8 10
10
20
30
40
50
0.001
VR, REVERSE BIAS VOLTAGE (VOLTS)
100 VO = 0.2 V Vin , INPUT VOLTAGE (VOLTS) TA = 25C 10 75C 25C
0.1
10
20
30
40
50
2456
MMUN2211LT1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = 25C 25C 1 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
75C
0.1
10
100
1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100 75C 10
25C TA = 25C
0.6
0.4
0.1
0.2
0.01 VO = 5 V
50
0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
100 VO = 0.2 V TA = 25C V in , INPUT VOLTAGE (VOLTS) 10 25C 75C
0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
2457
MMUN2211LT1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
80 90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
100 75C IC, COLLECTOR CURRENT (mA) 25C
TA = 25C 10
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = 25C
25C 75C 1
0.1
10
40
50
2458
MMUN2211LT1 SERIES
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2459
MOTOROLA

NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7
MPQ2222 MPQ2222A*
14 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.65 5.2 MPQ2222 30 60 5.0 500 Total Device 1.9 15.2 Watts mW/C C MPQ2222A 40 Unit Vdc Vdc Vdc mAdc
CASE 64606, STYLE 1 TO116
55 to +150
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 66 Unit C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO MPQ2222 MPQ2222A V(BR)CBO MPQ2222 MPQ2222A V(BR)EBO MPQ2222 MPQ2222A ICBO MPQ2222 MPQ2222A IEBO 50 10 100 nAdc 5.0 6.0 nAdc 60 75 Vdc 40 40 Vdc Vdc
(Replaces MPQ2221/D)
2460
MPQ2222 MPQ2222A
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) hFE MPQ2222A MPQ2222A MPQ2222,A MPQ2222,A MPQ2222 MPQ2222A VCE(sat) MPQ2222 MPQ2222A MPQ2222 MPQ2222A VBE(sat) MPQ2222 MPQ2222A MPQ2222 MPQ2222A 0.6 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 35 50 75 100 30 40 300 Vdc

Current Gain Bandwidth Product(1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF
TurnOn Time (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton MPQ2222A toff MPQ2222A 285 ns 35 ns
GENERATOR RISE TIME 2.0 ns PW 200 ns DUTY CYCLE = 2.0%
DUTY CYCLE = 2.0% +30 V 100 ms < 5.0 ns +16.2 V +30 V
200
200
9.9 V
619 0
1.0 k
1N916 0.5 V SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns 500 ms 13.8 V 3.0 V SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns
Figure 2. Storage Time and Fall Time Equivalent Test Circuit
2461
MPQ2222 MPQ2222A
4.0 h FE, DC CURRENT GAIN (NORMALIZED) 3.0 2.0 25C 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 55C TJ = 175C VCE = 1.0 V VCE = 10 V

1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 500 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V +1.6
qV , TEMPERATURE COEFFICIENT (mV/ C)
+0.8
25C TO 175C
qVC FOR VCE(sat)

0 55C TO 25C
0.8
1.6
qVB FOR VBE

0.5 1.0 2.0 5.0 10 20 50 100 200 500
2.4 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
6.0 5.0 NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 NF, NOISE FIGURE (dB) 10 f = 1.0 kHz 8.0 IC = 10 mA RS = 4.3 kW IC = 100 mA RS = 1.0 kW IC = 1.0 mA 100 mA 10 mA 6.0
4.0
2.0
0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
2462
MPQ2222 MPQ2222A
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 500 300 200 100 70 50 30 20 10 VCE = 20 V TJ = 25C f = 100 MHz 30 TJ = 25C 20 C, CAPACITANCE (pF)
Cib 10 7.0 5.0 Cob
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
3.0 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
SWITCHING TIME CHARACTERISTICS

200 tr 100 CHARGE (pC) t, TIME (ns) VCC = 30 V UNLESS NOTED 50 30 td @ VEB(off) = 0 20 tr @ 5 V td @ VEB(off) = 2 V 5.0 10 20 30 50 100 200 300 TJ = 25C IC/IB = 10 10 k 5k 2k 1k 500 200 100 50 20 3.0 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) VCC = 30 V QA, ACTIVE REGION CHARGE TJ = 25C IC/IB = 10 VCC = 5 V UNLESS NOTED
QT, TOTAL CONTROL CHARGE HIGH GAIN TYPES LOW GAIN TYPES ALL TYPES
10 3.0
300 t s ,t f , STORAGE AND FALL TIME (ns) ts IC/IB = 10 100 70 50 IC/IB = 10 30 20 LOW GAIN TYPES TJ = 25C 10 20 30 50 70 100 200 300 tf IC/IB = 20 t s ,t f , STORAGE AND FALL TIME (ns) 200
300 200 ts IC/IB = 10 100 70 50 30 20 HIGH GAIN TYPES TJ = 25C IC/IB = 10 tf IC/IB = 20
10 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
Figure 12. TurnOff Behavior
Figure 13. TurnOff Behavior
2463
MPQ2222 MPQ2222A
GENERATOR RISE TIME 2.0 ns PW 200 ns +30 V DUTY CYCLE = 2.0% 200 SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns +16.2 V 1.0 k 0 > 200 ns 0 1N916 RISE TIME 3.0% DUTY CYCLE = 2.0% +30 V
200 SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns
9.9 V
619
13.8 V
3.0 V
Figure 15. Storage Time and Fall Time Equivalent Test Circuit
2464
MOTOROLA
Quad Switching Transistor

NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7
MPQ2369
14 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.5 5.0 Value 15 40 4.5 500 Total Device 1.5 15 Watts mW/C C Unit Vdc Vdc Vdc mAdc
55 to +125

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 40 4.5 0.4 Vdc Vdc Vdc
mAdc
2465
MPQ2369
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 20 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 450 550 2.5 3.0 4.0 5.0 MHz pF pF
TurnOn Time (VCC = 3.0 Vdc, VBE = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 1. Pulse Test: Pulse Width ton toff 9.0 15 ns ns
2466
MPQ2369
+10 V 980 SCOPE +6.0 V 0 4.0 V PULSE WIDTH = 300 ns tf 1.0 ns DUTY CYCLE 2.0% 500 CS 3.0 pF
Figure 1. Storage Time Test Circuit
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 1.0 2.0 3.0 5.0 7.0 10 td @ VBE(off) = 1.5 V 20 30 50 70 100 tr @ VCC = 3.0 V tr @ VCC = 10 V t, TIME (ns) IC/IB = 10 TJ = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) tf VCC = 10 V IC/IB = 10 TJ = 25C
ts
VCC = 3.0 V
VCC = 3.0 V
270 +10.75 V 3.3 k 0 1.5 V PULSE WIDTH = 300 ns tr < 1.0 ns DUTY CYCLE 2.0% CS < 4.0 pF 0 4.15 V PULSE WIDTH = 300 ns tf 1.0 ns DUTY CYCLE 2.0% SCOPE +10.75 V 3.3 k
270 SCOPE
CS < 4.0 pF
Figure 4. TurnOn Test Circuit
Figure 5. TurnOff Test Circuit
2467
MPQ2369
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 5.0 TJ = 25C 3.0 C, CAPACITANCE (pF) 2.0 Cob Cib 2.0 k VCE = 10 V f = 100 MHz 1.0 k 700 500
1.0 0.7 0.5 0.05
300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
500 300 200 h FE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 V, VOLTAGE (VOLTS) 25C 55C TJ = 150C
1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.2 0.5 1.0 VCE(SAT) @ IC/IB = 10 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = 1.0 V
2.0
5.0
10
20
50
100
200
V CE , COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
+2.0
q V , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C 0.8 30 mA 0.6 100 mA 200 mA
*APPLIES FOR IC/IB hFE/3.0 +1.0 *qVC FOR VCE(SAT) 0 55C TO 25C 1.0 25C TO 150C
0.4
25C TO 150C
qVB FOR VBE

2.0 55C TO 25C 3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.2
IC = 10 mA 0.1 0.2 0.5 5.0 10 20 50
0 0.05
1.0
2.0
2468
MOTOROLA
Quad Amplifier Transistors

NPN Silicon
14 13 12 11 10 9 8 NPN
MPQ2483 MPQ2484*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 0.825 6.7 TJ, Tstg 2.4 19.2 Watts mW/C C 900 7.2 mW mW/C Value 40 60 6.0 50 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116
14 1
55 to +150
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 134 70 26 Unit C/W C/W % %

OFF CHARACTERISTICS
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2469
MPQ2483 MPQ2484
ON CHARACTERISTICS
DC Current Gain(2) (IC = 0.1 mAdc, VCE = 5.0 Vdc) hFE MPQ2483 MPQ2484 MPQ2483 MPQ2484 MPQ2483 MPQ2484 VCE(sat) VBE(sat) 0.58 0.70 0.7 0.8 0.13 0.15 0.35 0.5 Vdc 100 200 150 300 150 300 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage(2) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)

Current Gain Bandwidth Product (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k ohms, f = 1.0 kHz, BW = 10 kHz) 2. Pulse Test: Pulse Width MPQ2483 MPQ2484 fT Cibo Ccb NF 3.0 2.0 50 100 4.0 1.8 8.0 6.0 MHz pF pF dB
2470
MOTOROLA
Quad Complementary Pair Transistors

NPN/PNP Silicon
14 13 12 11 10 9 8 1 2 3 4 5 6 7
MPQ6100A MPQ6600A1*
Voltage and Current are negative for PNP Transistors
MPQ6100A TYPE A
14 13 12 11 10 9 8
COMPLEMENTARY
MPQ6600A1 TYPE B
14 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 0.825 6.7 TJ, Tstg 55 to +150 2.4 19.2 Watts mW/C C 900 7.2 mW mW/C MPQ6100A MPQ6600A1 45 60 5.0 50 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
Characteristic Thermal Resistance(1) Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
1. RJA is measured with the device soldered into a typical printed circuit board.
REV 2
2471
MPQ6100A MPQ6600A1
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CEO MPQ6100A, 6600A1 V(BR)CBO 60 V(BR)EBO 5.0 ICBO 10 nAdc Vdc 45 Vdc Vdc
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 100 Adc) Base Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 100 Adc) hFE MPQ6100A, 6600A1 MPQ6100A, 6600A1 MPQ6100A, 6600A1 MPQ6100A, 6600A1 VCE(sat) VBE(sat) 0.8 0.25 Vdc 100 150 150 125 Vdc

Current Gain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz, BW = 10 kHz) PNP NPN Cibo PNP NPN NF 4.0 8.0 8.0 dB fT Cobo 1.2 1.8 4.0 4.0 pF 50 MHz pF
MATCHING CHARACTERISTICS (MPQ6600A1 ONLY)

DC Current Gain Ratio (IC = 100 Adc, VCE = 5.0 Vdc) BaseEmitter Voltage Differential (IC = 100 Adc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width hFE1/hFE2 |VBE1VBE2| 0.8 1.0 20 mVdc
2472
MPQ6100A MPQ6600A1
SPOT NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
12 NOISE FIGURE (dB) 1 mA NOISE FIGURE (dB) 10 8 6 4 2 0 100 A 10 A 1.0 k 10 k Rs, SOURCE RESISTANCE (OHMS) 100 k
12 10 8 6 4 2 0 10 A 1 mA 100 A
1.0 k 10 k Rs, SOURCE RESISTANCE (OHMS)
100 k
Figure 1. Source Resistance Effects, f = 1.0 kHz

Rs SOURCE RESISTANCE 12 NOISE FIGURE (dB) 10 8 6 4 2 0 1.0 k 10 k f, FREQUENCY (Hz) 100 k 0
Figure 2. Source Resistance Effects, f = 10 Hz
IC = 100 A, RS = 30 k hFE, DC CURRENT GAIN IC = 10 A, RS = 100 k IC = 1.0 mA, RS = 1.0 k IC = 10 A, RS = 10 k IC = 100 A, RS = 3.0 k 800
VCE = 5.0 Vdc
TA = 125C 600 TA = 25C 400 TA = 55C 200
10
Figure 4. Typical Current Gain Characteristics
2473
MOTOROLA

PNP Silicon
14 13 12 11 10 9 8 PNP 1 2 3 4 5 6 7
MPQ2906 MPQ2907 MPQ2907A*

14
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MPQ2906 MPQ2907 40 60 5.0 600 Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.65 6.5 Total Device 1.9 19 Watts mW/C C MPQ2907A 60 Unit Vdc Vdc Vdc mAdc
55 to +125

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IE = 0) 1. Pulse Test: Pulse Width MPQ2906, MPQ2907 MPQ2907A IEBO MPQ2906,7 Only 50 nAdc V(BR)CEO MPQ2906, MPQ2907 MPQ2907A V(BR)CBO V(BR)EBO ICBO 40 60 60 5.0 50 Vdc Vdc nAdc Vdc
REV 3
2474
MPQ2906 MPQ2907 MPQ2907A

ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 500 mA) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) hFE MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2906 MPQ2907 MPQ2907A VCE(sat) MPQ2906, MPQ2907 MPQ2907A VBE(sat) MPQ2906, MPQ2907 MPQ2906, MPQ2907 MPQ2907A 1.3 2.6 2.6 0.4 1.6 1.6 Vdc 75 100 35 75 100 100 40 100 20 30 50 300 Vdc

Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF
TurnOn Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton MPQ2907A Only toff MPQ2907A Only 180 ns 45 ns
30 INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns 1.0 k 0 16 V 200 ns 50 INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ms 1.0 k 0 30 V 200 ns 50
+15 V
6.0
200
1.0 k
37
TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916
2475

2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +175C
1.0 0.7 0.5
+25C
55C 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) VCE = 10 V VCE = 1.0 V

2.0 TJ = 25C 1.6 ON VOLTAGE (VOLTS) COEFFICIENT (mV/ C) VBE(sat) @ IC/IB = 10 +1.0 +2.0
qVC FOR VCE(sat)

55C TO +25C
1.2
+25C TO +175C
0.8 VBE @ VCE = 1.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.5
1.0
qVB FOR VBE

+25C TO +175C
2.0 55C TO +25C 3.0 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
NOISE FIGURE
(VCE = 10 V, TA = 25C)
6.0 5.0 NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 VCE = 10 Vdc TA = 25C NF, NOISE FIGURE (dB) IC = 10 mA RS = 4.7 kW IC = 1.0 mA RS = 0.7 kW IC = 100 mA RS = 1.2 kW 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 10 IC = 10 mA 100 mA f = 1.0 kHz
8.0
6.0
4.0
2.0
1.0 mA
VCE = 10 Vdc TA = 25C 0.5 1.0 2.0 5.0 10 20 50 100
0 0.1 0.2 RS, SOURCE RESISTANCE (k OHMS)
2476

f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 600 400 VCE = 20 Vdc f = 100 MHz TJ = 25C C, CAPACITANCE (pF) 30 20 Cib Cob TJ = 25C f = 100 kHz
200
10 7.0 5.0
100 80 60
3.0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
500 300 200 100 70 50 30 20 10 5.0 7.0 td Q, CHARGE (pC) t, TIME (ns) tr IC/IB = 10 TJ = 25C VCC = 30 V, VBE(off) = 2.0 V VCC = 10 V, VBE(off) = 0 V
5000 3000 2000 1000 700 500 300 200 QA, ACTIVE REGION CHARGE VCC = 30 V TJ = 25C QT, TOTAL CONTROL CHARGE
10
20
30
50
70 100
200 300
500
100 5.0 7.0
10
20
30
50
70 100
200 300
500
500 300 t s , STORAGE TIME (ns) 200 100 70 50 30 20 IC/IB = 20 IC/IB = 10 ts ts 1/8 tf t f , FALL TIME (ns)
500 300 200 IC/IB = 20 100 70 50 30 20 10 5.0 7.0 IC/IB = 10 VCC = 30 V IB1 = IB2 TJ = 25C
IB1 = IB2 TJ = 25C
10 5.0 7.0
10
20
30
50
70 100
200 300
500
10
20
30
50
70 100
200 300
500
2477
P.W. 200 ns tr 2.0 ns DUTY CYCLE 2.0%
30 V
200 SCOPE
P.W. 1.0 ms tr 2.0 ns DUTY CYCLE 2.0% +13.8 V
30 V
200 SCOPE
1.0 k 0 16 V
1.0 k 0 16.2 V 1N916
3.0 V
2478
MOTOROLA

PNP Silicon
14 13 12 11 10 9 8 PNP 1 2 3 4 5 6 7
MPQ3467
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 650 5.2 PD 1.25 10 TJ, Tstg 55 to +150 3.2 25.6 Watts mW/C C 1500 12 mW mW/C Value 40 40 5.0 1.0 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc CASE 64606, STYLE 1 TO116
14 1
RqJC Junction to Case 100 39 45 5.0 RqJA Junction to Ambient 193 83.2 55 10
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4
Unit C/W C/W % %

OFF CHARACTERISTICS
2479
MPQ3467
ON CHARACTERISTICS
DC Current Gain(2) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(2) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(2) (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) 20 0.23 0.90 0.5 1.2 Vdc Vdc

Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 125 190 10 55 25 80 MHz pF pF
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 2. Pulse Test: Pulse Width ton toff 40 90 ns ns
2480
MPQ3467
200 V(sat) , SATURATION VOLTAGE (VOLTS) IC = 10 IB1 = 10 IB2 VCC = 30 V TJ = 25C TJ = 125C F = 10, 20 F = 10 F = 20 ts ts 1/8 tf 20 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) 1.6 1.4 1.2 1.0 VBE(sat) 0.8 0.6 0.4 0.2 0 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) MAX VCE(sat) MIN F = 10 TJ = 25C MAX
t sv, STORAGE TIME (ns)
100 70 50
30
Figure 1. Storage Time Variation with Temperature
Figure 2. Limits of Saturation Voltage
70 hFE , MINIMUM CURRENT GAIN 50
TJ = 125C TJ = 25C
VCE = 1.0 V VCE = 2.0 V
30
TJ = 55C
20
10 50
70
100
500
700
1000
2481
MOTOROLA
Quad Core Driver Transistor

NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7
MPQ3725
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCES VEBO IC One Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 1.0 8.0 TJ, Tstg 55 to +150 2.5 20 Watts mW/C C Value 40 60 5.0 1.0 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc
14 1
Characteristic Symbol Max One Transistor Thermal Resistance, Junction to Ambient(1) RqJA 125 Effective For Four Transistors 50 C/W Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CES V(BR)EBO ICBO 40 60 5.0 0.5 Vdc Vdc Vdc
mAdc
REV 3
2482
MPQ3725
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 25 VCE(sat) VBE(sat) 0.8 75 45 0.32 0.9 200 0.45 1.1 Vdc Vdc

Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 250 275 5.1 62 10 80 MHz pF pF
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc VBE(off) = 3.8 Vdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 2. Pulse Test: Pulse Width ton 20 35 ns
toff
50
60
ns

3.8 V +30 V 15 1.0 k 43 +9.7 V 0 PULSE GENERATOR tr, tf 1.0 ns PW 1.0 ms Zin = 50 W DUTY CYCLE 2.0% 62 1.0 mF 100 1.0 mF TO SAMPLING OSCILLOSCOPE Zin 100 kW tr < 1.0 ns
Figure 1. Switching Times Test Circuit
2483
MPQ3725
2.0 IC , COLLECTOR CURRENT (AMP) 1.0 0.5 0.3 0.2 TJ = 200C 0.1 0.05 0.03 0.02 3.0 SECOND BREAKDOWN LIMITED THERMAL LIMITATION @ TC = 25C PULSE DUTY CYCLE 10% APPLICABLE TO RATED BVCEO 4.0 6.0 8.0 10 20 30 40 60 dc
10 ms
TYPICAL DC CHARACTERISTICS
400 TJ = 125C h FE , DC CURRENT GAIN 200 25C 100 80 60 40 V, VOLTAGE (VOLTS) VCE = 1.0 V 1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 0.2 20 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) 0 10 VCE(sat) @ IC/IB = 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10
55C
1.0 TJ = 25C 0.8
+2.5
qV, TEMPERATURE COEFFICIENT (mV/ C)
+2.0 +1.5 +1.0 +0.5 0 0.5 1.0 1.5 2.0 2.5 10 20 30 50 *qVC FOR VCE(sat)
*APPLIES FOR IC/IB < hFE/2
0.6
1000 mA 800 mA 500 mA IC = 100 mA 1.0 2.0 5.0 10 20 300 mA
0.4
0.2
qVB FOR VBE
0 0.5
50
100
200
500
100
200 300
500
1000
2484
MPQ3725
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 10 Vdc f = 100 MHz TJ = 25C 100 70 50 C, CAPACITANCE (pF) 30 20 Cob Cib TJ = 25C
300 200
100 70 50 4.0
10 7.0 5.0
6.0
10
20
40
60
100
200
400
3.0 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200 100 50 t, TIME (ns) 30 20 10 5.0 3.0 2.0 10 20 30 td @ VBE(off) = 0 V VBE(off) = 3.8 Vdc VCC = 30 Vdc 50 100 200 300 500 1000 IC /IB = 10 TJ = 25C
200 tf @ IC/IB = 10 100 tr @ VCC = 10 Vdc tr @ VCC = 30 Vdc t, TIME (ns) 70 50 30 20 tf @ IC/IB = 20 ts @ IC/IB = 20 ts @ IC/IB = 10 VCC = 10 Vdc TJ = 25C
10 10 20 30 50 100 200 300 500 1000 IC, COLLECTOR CURRENT (mA)
I CES , COLLECTOR CUTOFF CURRENT ( m A)
1000
100 VCE = 60 VCE = 30 VCE = 10
10
1.0
0.1
0.01 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (C)
Figure 11. Collector Cutoff Current
2485
MOTOROLA

PNP Silicon
14
13
12
11
10
MPQ3762
PNP
14
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg 55 to +150 3.2 25.6 Watts mW/C C 1700 13.6 mW mW/C Value 40 40 5.0 1.5 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc
Characteristic Thermal Resistance(1) Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit C/W C/W % %

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 100 100 Vdc Vdc Vdc nAdc nAdc
2486
MPQ3762
DC Current Gain (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) hFE 35 30 20 VCE(sat) VBE(sat) 0.9 1.0 1.25 1.4 0.3 0.6 0.55 0.9 Vdc 70 65 35 Vdc

Current Gain Bandwidth Product(2) (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 150 275 9.0 55 15 80 MHz pF pF
TurnOn Time (VCC = 30 Vdc, IC = 1.0 Adc, IB1 = 100 mAdc, VBE(off) = 2.0 Vdc) TurnOff Time (VCC = 30 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc) 2. Pulse Test: Pulse Width ton toff 50 120 ns ns
2487
MPQ3762
200 V(sat) , SATURATION VOLTAGE (VOLTS) IC = 10 IB1 = 10 IB2 VCC = 30 V TJ = 25C TJ = 125C F = 10, 20 F = 10 F = 20 ts ts 1/8 tf 20 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) 1.6 1.4 1.2 1.0 VBE(sat) 0.8 0.6 0.4 0.2 0 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) MAX VCE(sat) MIN F = 10 TJ = 25C MAX
t sv, STORAGE TIME (ns)
100 70 50
30
Figure 1. Storage Time Variation with Temperature
Figure 2. Limits of Saturation Voltage
70 hFE , MINIMUM CURRENT GAIN 50
TJ = 125C TJ = 25C
VCE = 1.0 V VCE = 2.0 V
30
TJ = 55C
20
10 50
70
100
500
700
1000
2488
MOTOROLA

PNP Silicon
14 13 12 11 10 9 8 PNP
MPQ3798 MPQ3799*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.5 4.0 PD 0.825 6.7 TJ, Tstg 55 to +150 2.4 19.2 Watts m/C C 0.9 7.2 Watts mW/C MPQ3798 40 60 5.0 50 Four Transistors Equal Power MPQ3799 60 Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116
14 1
RqJC Junction to Case 151 52 34 2.0 RqJA Junction to Ambient 250 139 70 26
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4
Unit C/W C/W % %

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO MPQ3798 MPQ3799 V(BR)CBO V(BR)EBO ICBO IEBO 40 60 60 5.0 10 20 Vdc Vdc nAdc nAdc Vdc
1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2489
MPQ3798 MPQ3799
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) hFE MPQ3798 MPQ3799 MPQ3798 MPQ3799 MPQ3798 MPQ3799 MPQ3798 MPQ3799 VCE(sat) VBE(sat) 0.62 0.68 0.7 0.8 0.12 0.07 0.2 0.25 Vdc 100 225 150 300 150 300 125 250 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) (IC = 1.0 mAdc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) (IC = 1.0 mAdc, IB = 100 mAdc)

Current Gain Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 3.0 k ohms, f = 1.0 kHz) MPQ3798 MPQ3799 fT Cobo Cibo NF 2.5 1.5 60 250 2.1 5.5 4.0 8.0 MHz pF pF dB
2490
MPQ3798 MPQ3799
1000 500 h FE , CURRENT GAIN h FE , CURRENT GAIN 0.1 1000 500
200 100
200 100
10 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain versus Collector Current
Figure 2. DC Current Gain versus Collector Current
1.0
1.0
0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 V, VOLTAGE (VOLTS)
0.8 VBE(sat) @ IC/IB = 10 0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1.0 10 100
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1.0 10 100
2491
MOTOROLA
Quad Amplifier Switching Transistor

NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7
MPQ3904
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 2.4 19.2 55 to +150 Watts mW/C C 900 7.2 mW mW/C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 40 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
2492
MPQ3904

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 250 300 2.0 4.0 4.0 8.0 MHz pF pF
2493
MPQ3904
1.0 0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2494
MPQ3904
TIME (ns)
tr @ VCC = 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200

Figure 6. Rise Time
VCC = 40 V IB1 = IB2 IC/IB = 20
100 70 50 30 20 10 7 5 IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 8. Fall Time

IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
2495
MPQ3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
h fe , CURRENT GAIN
200
20 10 5
100 70 50
2 1
30
0.1
0.2
0.1
0.2
5.0
10

2.0 1.0 0.5
0.2
0.1
0.2

2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2496
MPQ3904
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0 0.5 +25C TO +125C
qVC FOR VCE(sat)

0 0.5 55C TO +25C 1.0 +25C TO +125C 1.5 2.0 55C TO +25C
qVB FOR VBE(sat)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2497
MOTOROLA
Quad Amplifier Switching Transistor

PNP Silicon
14 13 12 11 10 9 8 PNP 1 2 3 4 5 6 7
MPQ3906
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 55 to +150 2.4 19.2 Watts mW/C C 900 7.2 mW mW/C Value 40 40 5.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1

OFF CHARACTERISTICS
2498
MPQ3906

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 250 3.3 4.8 4.5 10 MHz pF pF
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns
3V 275
CS < 4 pF*
2499
MPQ3906
QT QA
1.0 0.1
0.2 0.3
20 30 40
1.0
2.0 3.0
200
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200
VCC = 40 V IB1 = IB2 IC/IB = 20
t f , FALL TIME (ns)
100 70 50 30 20 10 7 5 IC/IB = 10
TIME (ns)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 6. Fall Time
2500
MPQ3906
4.0
3.0
1.0
0 0.1
0.1
0.2
40
100
Figure 7.
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
200
100 70 50
10 7
30
0.1
0.2
5.0 7.0 10
0.1
0.2
5.0 7.0 10

0.1
0.2
5.0 7.0 10
2501
MPQ3906
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200

0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10

qVC FOR VCE(sat)
+25C TO +125C
0.6
55C TO +25C
0.2
qVB FOR VBE(sat)
1.0
2.0
100
200
20
40
160
180 200
2502
MOTOROLA
Quad Complementary Pair Transistors

NPN/PNP Silicon
14
13
12
11
10
MPQ6001 MPQ6002 MPQ6502

MPQ6001, MPQ6002 TYPE A

14 13 12 11 10 9 8
COMPLEMENTARY
MPQ6502 TYPE B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) MPQ6001, MPQ6002, MPQ6502 Derate above 25C MPQ6001, MPQ6002, MPQ6502 Total Device Dissipation @ TC = 25C MPQ6001, MPQ6002, MPQ6502 Derate above 25C MPQ6001, MPQ6002, MPQ6502 Operating and Storage Junction Temperature Range PD Watts 0.65 1.25 mW/C 5.18 PD Watts 1.0 3.0 mW/C 8.0 TJ, Tstg 55 to +150 24 C 10 Value 30 60 5.0 500 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1
Characteristic Thermal Resistance Each Die Effective, 4 Die Coupling Factors Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 Junction to Case 125 41.6 30 20 Junction to Ambient 193 100 % 60 24 Unit C/W
1. Voltage and Current are negative for PNP devices.
REV 3
2503
MPQ6001 MPQ6002 MPQ6502

OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain(2) (IC = 1.0 mAdc, VCE = 10 Vdc) hFE MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 VCE(sat) VBE(sat) 1.3 2.0 0.4 1.4 Vdc 25 50 35 75 40 100 20 30 Vdc
(IC = 300 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) Base Emitter Saturation Voltage(2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc)

Current Gain Bandwidth Product(2) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) PNP NPN Cibo PNP NPN 20 17 30 30 fT Cobo 6.0 4.5 8.0 8.0 pF 200 350 MHz pF
TurnOn Time (VCC = 30 Vdc, VEB = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc, Figure 1) TurnOff Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 2. Pulse Test: Pulse Width ton 30 ns
toff
225
ns
2504
MPQ6001 MPQ6002 MPQ6502

NPN DATA
4.0 h FE, DC CURRENT GAIN (NORMALIZED) 3.0 2.0 +25C 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 55C TJ = 150C VCE = 1.0 V VCE = 10 V

1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 2.0 VCE(sat) @ IC/IB = 10 5.0 10 20 50 100 200 500 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V +1.6
q V , TEMPERATURE COEFFICIENT (mV/ C)
TJ = 25C
+25C TO +150C +0.8
qVC FOR VCE(sat)

0 55C TO +25C
0.8
1.6
qVB FOR VBE

0.5 1.0 2.0 5.0 10 20 50 100 200 500
NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
6.0 5.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 10 f = 1.0 kHz 8.0 IC = 10 mA RS = 4.3 kW IC = 100 mA RS = 1.0 kW IC = 1.0 mA 100 mA 10 mA
6.0
4.0
2.0
0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
2505
MOTOROLA
Quad Darlington Transistor

NPN Silicon
14 13 12 11 10 9 8 NPN 1 2 3 4 5 6 7
MPQ6426
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 30 40 12 500 Four Die Equal Power 900 7.2 2400 19.2 mW mW/C mW mW/C C Unit Vdc Vdc Vdc mAdc
14 1
Each Die Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 500 4.0 825 6.7
55 to +150

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO 30 V(BR)CBO 40 V(BR)EBO 12 ICBO IEBO 100 100 nAdc nAdc Vdc Vdc Vdc
2506
MPQ6426
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 5000 10,000 VCE(sat) VBE(on) 2.0 1.5 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width fT 125 Cobo Cibo 15 8.0 pF pF MHz
2507
MPQ6426
(VCE = 5.0 Vdc, TA = 25C)
500 BANDWIDTH = 1.0 Hz RS 0 i n , NOISE CURRENT (pA) 10 mA 100 mA 20 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) IC = 1.0 mA 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 100 mA 10 mA
200 e n , NOISE VOLTAGE (nV) 100 50
IC = 1.0 mA
V T , TOTAL WIDEBAND NOISE VOLTAGE (nV)
200 BANDWIDTH = 10 Hz TO 15.7 kHz 70 50 30 20 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 100 mA IC = 10 mA NF, NOISE FIGURE (dB) 100
14 12 10 8.0 6.0 4.0 2.0 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 RS, SOURCE RESISTANCE (kW) RS, SOURCE RESISTANCE (kW) IC = 1.0 mA 100 mA BANDWIDTH = 10 Hz TO 15.7 kHz 10 mA
20 h fe , SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
TJ = 25C C, CAPACITANCE (pF) 10 7.0 5.0 Cib Cob
2.0
1.0 0.8 0.6 0.4 0.2
3.0 2.0 0.04
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
0.5
1.0
2.0
5.0
10
20
50
100
200
500
2508
MOTOROLA

NPN/PNP Silicon
MPQ6700
14 13 12 11 10 9 8
MPQ6502
For Specifications, See MPQ6001 Data
COMPLEMENTARY
4 TYPE B
MPQ6600A1
For Specifications, See MPQ6100A Data
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 2400 19.2 55 to +150 mW mW/C C CASE 64606, STYLE 1 TO116 TYPE B 900 7.2 mW mW/C
14 1
Value 40 40 5.0 200 Four Transistors Equal Power

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 5.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
2509
MPQ6700
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 70 VCE(sat) VBE(sat) 0.9 0.25 Vdc Vdc

Current Gain Bandwidth Product(2) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width PNP NPN fT 200 Cobo Cibo 10 8.0 4.5 pF pF MHz
2510
MPQ6700
500 300 200 h FE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C 25C 55C h FE, DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C
25C
55C
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V
0.6
0.4
0.4
0.2
0.2 VCE(sat) @ IC/IB = 10 100 200 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0 0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 3. ON Voltage
+2.0
+2.0 * APPLIES FOR IC/IB hFE/2.0
q V , TEMPERATURE COEFFICIENT (mV/C)
* APPLIES FOR IC/IB hFE/2.0 +1.0 25C TO 125C
+1.0
*qVC FOR VCE(sat)

0
25C TO 125C 55C TO 25C 25C TO 125C
*qVC FOR VCE(sat)

0 55C TO 25C 25C TO 125C
1.0
1.0
qVB FOR VBE

2.0
55C TO 25C
2.0
qVB FOR VBE
55C TO 25C
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
2511
MPQ6700
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
0.6
0.6
0.4
0.4
0.2
0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
50
500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 2.0 V VBE(off) = 0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 TJ = 25C
500 300 200 100 70 50 30 20 Tr @ VCC = 3.0 V 10 7.0 5.0 2.0 3.0 5.0 7.0 10 2.0 V td @ VBE(off) = 0 20 30 50 70 100 200 tr @ VCC = 40 V IC/IB = 10 TJ = 25C
t, TIME (ns)
tr @ VCC = 3.0 V 40 V
t, TIME (ns)
500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 tf @ IC/IB = 10 ts = ts = 1/8 tf VCC = 3.0 V IB1 = IB2 TJ = 25C 20 t, TIME (ns) IC/IB = 10 IC/IB = 20
500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 tf @ IC/IB = 10 IC/IB = 20 ts = ts 1/8 tf VCC = 40 V IB1 = IB2 IC/IB = 10 IC/IB = 20
t, TIME (ns)
5.0 7.0 10
20
30
50 70 100
200
5.0 7.0 10
20
30
50 70 100
200
2512
MPQ6700
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 500 TJ = 25C VCE = 20 V f = 100 MHz 700 500 TJ = 25C VCE = 20 V f = 100 MHz
300 200 150 100 70 50 0.3
300 200
100 70 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
7.0 5.0 C, CAPACITANCE (pF) TJ = 25C C, CAPACITANCE (pF)
10 7.0 5.0 Cib 3.0 2.0 Cob TJ = 25C
3.0 2.0 1.5 1.0 0.7 0.06 0.1 0.2 0.4 0.6 1.0 2.0
Cib
Cob 1.0 0.04
4.0 6.0 10
20
40 60
0.1 0.2 0.4
1.0 2.0
4.0
10
20
40
2513
MOTOROLA

NPN/PNP Silicon
MPQ6842
14 13 12 11 10 9 8 COMPLEMENTARY

6 7
4 TYPE B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 55 to +150 2400 19.2 mW mW/C C 900 7.2 mW mW/C Value 30 30 4.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116 TYPE B
14 1

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IE = 0) V(BR)CEO 30 V(BR)CBO 30 V(BR)EBO 4.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
2514
MPQ6842
DC Current Gain (IC = 0.5 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc, 0C T 70C) Base Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc) hFE 30 50 70 VCE(sat) VBE(sat) 0.65 0.9 0.05 0.15 Vdc Vdc

Current Gain Bandwidth Product(2) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP NPN fT 200 Cobo Cibo 5.0 4.0 10 8.0 3.0 4.5 pF 350 pF MHz
SWITCHING CHARACTERISTICS (TA = 25C, VCC = 5.0 Vdc)

Propagation Delay Time (50% Points TP1 to TP3) (50% Points TP2 to TP4) Rise Time (0.3 V to 4.7 V, TP3 or TP4) Fall Time (4.7 V to 0.3 V, TP3 or TP4) 2. Pulse Test: Pulse Width ns tPLH tPHL tr 5.0 tf 5.0 10 20 25 35 ns 15 6.0 25 15 ns
2515
MPQ6842
500 300 200 h FE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C 25C 55C h FE, DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C
25C
55C
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V
0.6
0.4
0.4
0.2
0.2 VCE(sat) @ IC/IB = 10 100 200 0 0.2 0.5 1.0 2.0 4.0 10 20 40 100
0 0.2
0.5
1.0
2.0
5.0
10
20
50
+2.0
+2.0 * APPLIES FOR IC/IB hFE/2.0
* APPLIES FOR IC/IB hFE/2.0 +1.0 25C TO 125C
+1.0
*qVC FOR VCE(sat)

0
25C TO 125C 55C TO 25C 25C TO 125C
*qVC FOR VCE(sat)

0 55C TO 25C 25C TO 125C
1.0
1.0
qVB FOR VBE

2.0
55C TO 25C
2.0
qVB FOR VBE
55C TO 25C
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
2516
MPQ6842
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
0.6
0.6
0.4
0.4
0.2
0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
50
33 pF 1k 6 4.7 k 1/4 MC3001 (74H08)
VCC +5 V 5 7 22 TP3
NOTES: 1. Unless otherwise noted, all resistors carbon composition 1/ W 5%, all capacitors dipped mica 2%. 4 2. Use short interconnect wiring with good power and ground buses. 3. TP1 thru TP4 are coaxial connectors to accept scope probe tip and provide a good ground. 4. Device under test is MPQ6842. 5. 160 pF load does not include stray or scope probe capacitance. 6. Scope probe resistance > 5 kW. Scope probe capacitance < 10 pF.
0.1 mF CERAMIC
68 pF TP1 2 PULSE GENERATOR 0 TO 5 V 51 tr, tf 2 ns PW 200 ns PERIOD 1000 ns 10 k 33 pF
10 160 pF 1 3 VCC +5 V 1 k 10 9 0.1 mF CERAMIC 8
4.7 k 1/4 MC3000 (74H00)
TP1 OR TP2 22 TP4 68 pF TP2 10 14 13 10 k 12 160 pF 4.7 V TP3 OR TP4 tf tPHL
50% tPLH
50% 0.3 V tr
Figure 9. Switching Times Test Circuit and Waveforms
2517
MOTOROLA

NPN Silicon
14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 TYPE B 5 6 7
MPQ7041 MPQ7042 MPQ7043*

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector CurrentContinuous Symbol VCEO VCBO VEBO IC Each Die Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg 3.2 25.6 55 to +150 Watts mW/C C 1700 13.6 mW mW/C MPQ7041 150 150 MPQ7042 200 200 5.0 500 Four Die Equal Power MPQ7043 250 250 Unit Vdc
14
Vdc Vdc mAdc
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit C/W C/W % %

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPQ7041 MPQ7042 MPQ7043 V(BR)CBO MPQ7041 MPQ7042 MPQ7043 V(BR)EBO 5.0 ICBO MPQ7041 MPQ7042 MPQ7043 100 100 100 nAdc 150 200 250 Vdc 150 200 250 Vdc Vdc
Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) (VCB = 180 Vdc, IE = 0)
2518
MPQ7041 MPQ7042 MPQ7043

Characteristic Symbol Min Max Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 40 VCE(sat) VBE(sat) 0.7 0.9 0.3 0.5 Vdc 45 60 80 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 20 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) fT 50 Cobo Cibo 40 50 2.5 5.0 pF 80 pF MHz
DC CHARACTERISTICS
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125C 1.2 V, VOLTAGE (VOLTS) 100 70 55C 50 25C 1.0 0.8 0.6 0.4 0.2 0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ IC/IB = 10 V 1.4 TJ = 25C
30 20 1.0
5.0

2.5
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
IC/IB = 10
qVC FOR VCE(sat)
25C TO 125C
55C TO 25C
qVB FOR VBE
55C TO 125C
5.0 7.0
10
20
30
50
70
100
2519
MOTOROLA

NPN/PNP Silicon
14
13
12
11
10
MPQ7051
COMPLEMENTARY
4 TYPE B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 150 150 5.0 500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116 TYPE B
14 1
Each Die Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 750 5.98 1.25 10
55 to +150

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 150 V(BR)CBO 150 V(BR)EBO 5.0 ICBO IEBO 100 250 nAdc nAdc Vdc Vdc Vdc
2520
MPQ7051
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 35 25 VCE(sat) VBE(sat) 0.9 0.7 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 20 Vdc, IC = 0, f =1.0 MHz) Input Capacitance (VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) NPN PNP fT 50 Cobo Cibo 50 75 6.0 pF pF MHz
2521
MPQ7051
DC CHARACTERISTICS
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125C h FE, DC CURRENT GAIN
200 VCE = 10 V TJ = 125C 25C
100 70
25C
100 70 50
55C
55C 50
30 20 1.0
30 20 1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ IC/IB = 10 V V, VOLTAGE (VOLTS)
1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 0.2 5.0 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE(sat) @ IC/IB = 10 5.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
2.5
2.5 IC/IB = 10
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
IC/IB = 10 25C TO 125C
qVC FOR VCE(sat)
25C TO 125C
qVC FOR VCE(sat)

55C TO 25C
55C TO 25C
qVB FOR VBE
55C TO 125C
55C TO 125C
qVB FOR VBE
5.0 7.0
10
20
30
50
70
100
5.0 7.0 10
20 30
50 70 100
2522
MOTOROLA

PNP Silicon
14 13 12 11 10 9 8 COMPLEMENTARY 1 2 3 4 TYPE B 5 6 7
MPQ7091 MPQ7093*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MPQ7091 150 150 5.0 500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/C Watts mW/C C MPQ7093 250 250 Unit Vdc Vdc Vdc mAdc
14 1
Each Die Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg
55 to +150

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MPQ7091 MPQ7093 IEBO 100 V(BR)CEO MPQ7091 MPQ7093 V(BR)CBO MPQ7091 MPQ7093 V(BR)EBO 5.0 ICBO 250 250 nAdc nAdc 150 250 Vdc 150 250 Vdc Vdc
2523
MPQ7091 MPQ7093
Characteristic Symbol Min Max Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 35 25 VCE(sat) VBE(sat) 0.7 0.9 0.3 0.5 Vdc 40 55 50 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 20 Vdc, IE = 0, f =1.0 MHz) Input Capacitance (VEB = 3.0 Vdc, IC = 0, f = 1.0 MHz) fT 50 Cobo Cibo 60 75 3.0 5.0 pF 70 pF MHz
DC CHARACTERISTICS
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125C 1.2 V, VOLTAGE (VOLTS) 100 70 50 25C 1.0 0.8 0.6 0.4 0.2 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 1.0 2.0 3.0 VCE(sat) @ IC/IB = 10 5.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 1.4 TJ = 25C
55C
30 20 1.0
5.0 7.0 10
20 30
50 70 100

2.5
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
IC/IB = 10 25C TO 125C
qVC FOR VCE(sat)

55C TO 25C
55C TO 125C
qVB FOR VBE
5.0 7.0 10
20 30
50 70 100
2524
MOTOROLA
Chopper Transistor
PNP Silicon
MPS404A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 35 40 25 150 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VBE = 10 Vdc, IC = 0) 2. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 35 40 25 100 100 Vdc Vdc Vdc nAdc nAdc
2525
MPS404A
ON CHARACTERISTICS
DC Current Gain (IC = 12 mAdc, VCE = 0.15 Vdc) Collector Emitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 0.85 1.0 0.15 0.2 Vdc 30 400 Vdc

CommonBase Cutoff Frequency (IC = 1.0 mAdc, VCB = 6.0 Vdc) Output Capacitance (VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) fob Cobo 4.0 20 MHz pF
VEC , EMITTERCOLLECTOR VOLTAGE (mV) VCE , COLLECTOREMITTER VOLTAGE (mV)
NORMAL MODE INVERTED MODE TJ = 25C
VBC, BASECOLLECTOR VOLTAGE (VOLTS) VBE, BASEEMITTER VOLTAGE (VOLTS)
100
0.9 NORMAL MODE INVERTED MODE 0.82 VBE(sat) @ IC/IB = 2 VBC(sat) @ IE/IB = 2 TJ = 25C
80
60 VCE(sat) @ IC/IB = 10
0.74
40 IC/IB = 2.0 VEC(sat) @ IE/IB = 2.0
0.66
20
0.58
0 1.0
2.0 3.0
5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)
50 70 100
0.50 1.0
2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)
50 70 100
Figure 1. CollectorEmitter Voltage
Figure 2. Base On Voltage
2526
MPS404A
NORMAL MODE
200 10 7.0 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 80 60 55C 40 30 20 25C 5.0 TJ = 125C 55C 25C
INVERTED MODE
3.0 2.0 1.5
10 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.0 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IE, EMITTER CURRENT (mA)
Figure 3. DC Current Gain @ VCE = 0.15 Vdc

600 400 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 300 200 TJ = 125C 25C 10 7.0 5.0
Figure 4. DC Current Gain @ VEC = 0.15 Vdc
TJ = 125C 25C
55C 3.0 2.0
100 80 60 40 30 1.0 2.0 3.0
55C
50 70 100
1.0 1.0
2.0 3.0
5.0 7.0 10 20 30 IE, EMITTER CURRENT (mA)
50 70 100
Figure 5. DC Current Gain @ VCE = 1.0 Vdc

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) VEC , EMITTERCOLLECTOR VOLTAGE (VOLTS)
Figure 6. DC Current Gain @ VEC = 1.0 Vdc
0.5 TJ = 25C 0.4 IC = 2.0 mA 10 mA 50 mA
0.5
TJ = 25C
0.4 IE = 0.5 mA 2.0 mA 10 mA 50 mA
0.3
0.3
0.2
0.2
0.1
0.1
0 0.005 0.01 0.02
1.0
2.0
5.0
0 0.05 0.1
0.2
10
20
50
Figure 8. Emitter Saturation Region
2527
MPS404A
100 rec(on), EMITTERCOLLECTOR ON RESISTANCE (OHMS) 70 50 30 20 20
NOTE: The dynamic resistance between the emitter and NOTE: collector is measured with the device operated in NOTE: the Inverted Mode.
TJ = 25C C, CAPACITANCE (pF) 10 7.0 5.0 Cib 3.0 Cob
Ie = 100 A RMS f = 1.0 kHz TJ = 25C IE = 0
10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 0.05 0.1 0.2 0.5 1.0 2.0
5.0
10
20
50
Figure 9. EmitterCollector On Resistance
2.0 k 1.0 k 700 500 t, TIME (ns) 300 200 100 70 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tr VCC = 10 V IC/IB = 0 TJ = 25C t, TIME (ns)
1.0 k 700 ts 500 VCC = 10 V IC/IB = 0 IB1 = IB2 TJ = 25C
300 200
tf
td @ VBE(off) = 1.4 V 100 1.0
50 70 100
VBB RBB 1.0 k 0.1 F Vin 51 RB 10 k
VCC = 10 V RC (560 ) C1 (0250 pF) INPUT Vin RB* (5.6 k) OUTPUT
1.0 k TO SCOPE
VCC (6.0 V)
Vin (Volts) ton, td and tr toff, ts and tf 12 +20.6
VBB (Volts) +1.4 11.6
Voltages and resistor values shown are for IC = 10 mA. IC/IB = 10 and IB1 = IB2. Resistor values changed to obtain curves in Figures 11 and 12.
MEASUREMENT PROCEDURE C1 is increased until the toff time of the output waveform is decreased to 0.2 s, QS is then calculated by QS = C1 Vin. QS3 or QS7 by BLine Electronics or equivalent may also be used.
VOLTAGE WAVEFORMS 0 6.0 V Vout 6.0 V >5.0 s Vin tr, tf < 15 ns 10% toff
Figure 14. Stored Base Charge Test Circuit
2528
MOTOROLA
NPN MPS650 MPS651 * PNP MPS750 MPS751 *

*Motorola Preferred Devices
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS650 MPS750 40 60 5.0 2.0 625 5.0 1.5 12 55 to +150 MPS651 MPS751 60 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter Base Breakdown Voltage (IC = 0, IE = 10 Adc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. MPS650, MPS750 MPS651, MPS751 IEBO V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS750 MPS651, MPS751 V(BR)EBO ICBO 0.1 0.1 0.1 Adc 60 80 5.0 Vdc Adc 40 60 Vdc Vdc
2529
NPN MPS650 MPS651 PNP MPS750 MPS751

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued)
DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) BaseEmitter On Voltage (IC = 1.0 A, VCE = 2.0 V) Base Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) hFE 75 75 75 40 VCE(sat) VBE(on) VBE(sat) 0.5 0.3 1.0 1.2 Vdc Vdc Vdc

Current Gain Bandwidth Product(2) (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. fT 75 MHz
NPN
300 270 240 hFE, DC CURRENT GAIN 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) 55C 25C TJ = 125C hFE, DC CURRENT GAIN VCE = 2.0 V 250 225 200 175 150 125 100 75 50 25 0 10 20 55C 25C TJ = 125C
PNP
VCE = 2.0 V
50 10 200 500 1.0 A 2.0 A 4.0 A 0 IC, COLLECTOR CURRENT (mA)
Figure 1. MPS650, MPS651 Typical DC Current Gain NPN

2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 200 500 1.0 A IC, COLLECTOR CURRENT (mA) 2.0 A 4.0 A VCE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 50
Figure 2. MPS750, MPS751 Typical DC Current Gain PNP
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10 10 20 50 1.0 A 0 IC, COLLECTOR CURRENT (mA) 0 0 2.0 A 4.0 A
Figure 3. MPS650, MPS651 On Voltages
Figure 4. MPS750, MPS751 On Voltages
2530

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) VCE , COLLECTOREMITTER VOLTAGE (VOLTS)
NPN
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25C
PNP
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IC = 10 mA IC = 100 mA 50 100 200 500 IC = 500 mA IC = 2.0 A TJ = 25C
0 0.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5 IB, BASE CURRENT (mA)
Figure 5. MPS650, MPS651 Collector Saturation Region NPN

10 4.0 IC, COLLECTOR CURRENT 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 TA = 25C 1.0 ms MPS65 0 MPS65 1 TC = 25C 100 s 10 4.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 100 0.01 1.0
Figure 6. MPS750, MPS751 Collector Saturation Region PNP
100 s 1.0 ms MPS75 0 MPS75 1 TC = 25C
TA = 25C
WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100
Figure 7. MPS650, MPS651 SOA, Safe Operating Area
Figure 8. MPS750, MPS751 SOA, Safe Operating Area
2531
MOTOROLA
NPN Silicon
MPS918* MPS3563
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS918 15 30 3.0 50 350 2.8 0.85 6.8 55 to +150 MPS3563 12 30 2.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 357 147 Unit C/W C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 3.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO MPS918 MPS3563 V(BR)CBO MPS918 MPS3563 V(BR)EBO MPS918 MPS3563 ICBO MPS918 MPS3563 10 50 3.0 2.0 nAdc 30 30 Vdc 15 12 Vdc Vdc
1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 1.0%.
2532
MPS918 MPS3563
ON CHARACTERISTICS
DC Current Gain(2) (IC = 3.0 mAdc, VCE = 1.0 Vdc) (IC = 8.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE MPS918 MPS3563 VCE(sat) MPS918 VBE(sat) MPS918 1.0 Vdc 20 20 200 0.4 Vdc

Current Gain Bandwidth Product(2) (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 0 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, RS = 400 k, f = 60 MHz) fT MPS918 MPS3563 Cobo MPS918 MPS918 MPS3563 Cibo MPS918 hfe MPS3563 NF MPS918 6.0 dB 20 250 3.0 1.7 1.7 2.0 pF 600 600 1500 pF MHz
FUNCTIONAL TEST
CommonEmitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) (Gfd + Gre 20 dB) Gpe MPS918 MPS3563 Pout MPS918 MPS918 25 % 15 14 30 mW dB
Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Oscillator Collector Efficiency (IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) 2. Pulse Test: Pulse Width
2533
MOTOROLA

NPN Silicon
MPS2222 MPS2222A*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS2222 30 60 5.0 600 625 5.0 1.5 12 55 to +150 MPS2222A 40 75 6.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 50 Vdc, IE = 0, TA = 125C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222 MPS2222A MPS2222 MPS2222A MPS2222 MPS2222A MPS2222A ICBO MPS2222 MPS2222A MPS2222 MPS2222A IEBO MPS2222A IBL MPS2222A 20 nAdc 0.01 0.01 10 10 100 nAdc Adc V(BR)CEO V(BR)CBO V(BR)EBO ICEX 30 40 60 75 5.0 6.0 10 Vdc Vdc Vdc nAdc
2534
MPS2222 MPS2222A
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MPS2222 MPS2222A MPS2222 MPS2222A VBE(sat) MPS2222 MPS2222A MPS2222 MPS2222A 0.6 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 300 Vdc
MPS2222A only
MPS2222 MPS2222A
(IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

Current Gain Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) MPS2222 MPS2222A hie MPS2222A MPS2222A hre MPS2222A MPS2222A hfe MPS2222A MPS2222A hoe MPS2222A MPS2222A rbCc MPS2222A NF MPS2222A 4.0 dB 5.0 25 35 200 150 ps 50 75 300 375 8.0 4.0 2.0 0.25 8.0 1.25 X 10 4 fT MPS2222 MPS2222A Cobo Cibo 30 25 k 250 300 8.0 pF pF MHz
mmhos
Delay Time Rise Time Storage Time Fall Time
MPS2222A only
td tr ts tf 10 25 225 60 ns ns ns ns
( (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2)
2535
MPS2222 MPS2222A
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
1000 700 500 hFE , DC CURRENT GAIN 300 200
TJ = 125C
25C 100 70 50 30 20 10 0.1 55C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k
1.0 TJ = 25C 0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
2.0
3.0
5.0
10
20
30
50
2536
MPS2222 MPS2222A
t, TIME (ns)
tf
6.0
6.0
4.0
4.0
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0 50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)

500 VCE = 20 V TJ = 25C
300 200
100 70 50 1.0
0.2 0.3
20 30
50
2.0
50
70 100
2537
MPS2222 MPS2222A
0.2
2538
MOTOROLA
Switching Transistors
NPN Silicon
MPS2369 MPS2369A*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Value 15 40 40 4.5 200 625 5.0 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 10 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 125C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width V(BR)CEO MPS2369A V(BR)CES MPS2369,A V(BR)CBO MPS2369,A V(BR)EBO MPS2369,A ICBO MPS2369,A ICES MPS2369,A 0.4 30 0.4 Adc Adc 4.5 Vdc 40 Vdc 40 Vdc 15 Vdc
2539
MPS2369 MPS2369A
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = 55C) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MPS2369A MPS2369 MPS2369 MPS2369A MPS2369A MPS2369A MPS2369 MPS2369A VCE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A VBE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A 0.7 0.5 0.85 1.02 1.15 1.60 0.25 0.20 0.30 0.25 0.50 Vdc 20 40 40 20 30 20 20 120 120 Vdc

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Cobo MPS2369,A hfe MPS2369,A 5.0 4.0 pF
Storage Time (IB1 = IB2 = IC = 10 mAdc) (Figure 3) TurnOn Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Figure 1) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Figure 2) 1. Pulse Test: Pulse Width ts MPS2369,A ton MPS2369,A toff MPS2369,A 10 18 ns 8.0 12 ns 5.0 13 ns
2540
MPS2369 MPS2369A
+10.6 V 0 1.5 V t1 3.0 V 270
< 1.0 ns
3.3 k
CS* < 4.0 pF
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0%
Figure 1. ton Circuit
+10.75 V 0 4.15 V
t1
3.0 V 270 < 1.0 ns
3.3 k
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0%
CS* < 4.0 pF
Figure 2. toff Circuit
+6.0 V 0 4.0 V
t1
10 V 980
< 1.0 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0%
500
CS* < 3.0 pF
Figure 3. Storage Test Circuit
* Total shunt capacitance of test jig and connectors.
2541
MOTOROLA

PNP Silicon
MPS2907 MPS2907A*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg 500 to +150 Watts mW/C C mW mW/C MPS2907 40 60 5.0 600 MPS2907A 60 Unit Vdc Vdc Vdc mAdc
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 150C) Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. Pulse Test: Pulse Width MPS2907 MPS2907A MPS2907 MPS2907A IB MPS2907 MPS2907A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 0.02 0.01 20 10 50 nAdc 40 60 60 5.0 50 Vdc Vdc Vdc nAdc Adc

2542
MPS2907 MPS2907A
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907, MPS2907A MPS2907 MPS2907A VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 35 75 50 100 75 100 100 30 50 300 Vdc

Current Gain Bandwidth Product(1), (2) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Fi Ad ) (Figure 2) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figures 1 and 5) 15 Ad ) (Fi d ton td tr toff ts tf 45 10 40 100 80 30 ns ns ns ns ns ns
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 16 V 200 ns 50 1.0 k
30 V 200
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 30 V 200 ns
+15 V
1.0 k 1.0 k 50
1N916
2543
MPS2907 MPS2907A
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.8 IC = 1.0 mA 0.6 10 mA 100 mA 500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2
2.0
3.0
5.0 7.0 10
20 30
50
t, TIME (ns)
2544
MPS2907 MPS2907A
6.0
6.0
4.0
4.0
IC = 50 A 100 A 500 A 1.0 mA
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)

400 300 200
10 7.0 5.0 3.0 2.0 0.1 Ccb
100 80 60 40 30 20 1.0 2.0
VCE = 20 V TJ = 25C
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
5.0
10
20
50
100 200
500 1000
0.6
0.4
0.2
0 0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
5.0 10 20
50 100 200 500
2545
MOTOROLA
PNP Silicon
MPS3638A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 25 25 25 4.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Emitter Sustaining Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) (VCE = 15 Vdc, VBE = 0, TA = 65C) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) Base Current (VCE = 15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES IEBO IB 0.035 2.0 35 0.035 nA 25 25 25 4.0 Vdc Vdc Vdc Vdc
mAdc
mAdc
(Replaces MPS3638/D)
2546
MPS3638A
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) (IC = 300 mAdc, IB = 30 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) (IC = 300 mAdc, IB = 30 mAdc) hFE 80 100 100 20 VCE(sat) VBE(sat) 0.80 1.1 2.0 0.25 1.0 Vdc Vdc

Current Gain Bandwidth Product (VCE = 3.0 Vdc, IC = 50 mAdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) fT 150 Cobo Cibo hie hre hfe 100 hoe 1.2 mmhos 15 2000 X 10 4 25 k 10 pF pF MHz
Delay Time Rise Time Storage Time Fall Time TurnOn Time TurnOff Time (VCC = 10 Vdc IC = 300 mAdc IB1 = 30 mAdc) Vdc, mAdc, ( (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc, IB2 = 30 mAdc) (IC = 300 mAdc, IB1 = 30 mAdc) (IC = 300 mAdc, IB1 = 30 mAdc, IB2 = 30 mAdc) td tr ts tf ton toff 20 70 140 70 75 170 ns ns ns ns ns ns
2. Pulse Test: Pulse Width
2547
MPS3638A
30 V < 2 ns +2 V 0 1.0 k 16 V 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 1.0 k 16 V 1.0 to 100 s, DUTY CYCLE = 2% CS* < 10 pF < 20 ns 30 V 200
+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 10 20 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
0.2 0.3
2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS)
20
30
300
500
2548
MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
25C 100C
100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
100 70 50 30 20 VCC = 30 V IC/IB = 10
Figure 6. Rise Time
10
20
30
50
70
100
200
300
500
2549
MPS3638A
IC = 50 A 100 A 500 A 1.0 mA
0 0.01 0.02 0.05 0.1 0.2
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from the 2N4402 line, and the same units were This group of graphs illustrates the relationship between used to develop the correspondinglynumbered curves on hfe and other h parameters for this series of transistors. To each graph. obtain these curves, a highgain and a lowgain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2
100 70 50
2N4402 UNIT 1 2N4402 UNIT 2

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10
MPS3638A
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 0.8
0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA
0.2
0 0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
2.0
3.0
5.0
7.0
10
20
30
50
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
qVC for VCE(sat)
0.6
0.4
0.2
qVS for VBE

2551
MOTOROLA
PNP Silicon
MPS3640
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, VBE = 0) (VCE = 6.0 Vdc, VBE = 0, TA = 65C) Base Current (VCE = 6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES IB 0.01 1.0 10 nAdc 12 12 12 4.0 Vdc Vdc Vdc Vdc Adc
2552
MPS3640
DC Current Gain (IC = 10 mAdc, VCE = 0.3 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 65C) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 30 20 VCE(sat) VBE(sat) 0.75 0.75 0.95 1.0 1.5 0.2 0.6 0.25 Vdc 120 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 500 3.5 3.5 MHz pF pF
Delay Time Rise Time Storage Time Fall Time TurnOn Time (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = 0.5 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = IB2 = 0.5 mAdc) 1. Pulse Test: Pulse Width (VCC = 6.0 Vdc, IC = 50 mAdc, VBE(off) = 1.9 Vdc, IB1 = 5.0 mAdc) 5 0 Ad ) (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc) td tr ts tf ton toff 35 75 25 60 ns 10 30 20 12 ns ns ns ns ns
VBB = +1.9 V VCC = 6.0 V 1.0 k 0 0.1 F 680 110 Vout 5.0 V
VBB = 6.0 V 5.0 k 0.1 F 5.0 k
VCC = 1.5 V 130 Vout
Vin 6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 5.0 mA.
Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 0.5 mA.
Figure 1.
Figure 2.
2553
MPS3640
200 VCE = 1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 0.2 10 0.1 0.2 5.0 10 20 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 125C V, VOLTAGE (VOLTS) 25C 55C 1.4 1.2 1.0 0.8 VBE(on) @ VCE = 1.0 V 0.6 0.4 TJ = 25C VBE(sat) @ IC/IB = 10
1.0 TJ = 25C 0.8 IC = 1.0 mA 0.6 5.0 mA 20 mA 80 mA V, TEMPERATURE COEFFICIENT (mV/ C)
+0.5
*APPLIES FOR IC/IB hFE/4 RVC for VCE(sat)
25C to 125C
55C to 25C 0.5
0.4
1.0 25C to 125C RVB for VBE 2.0 0.1 0.2 55C to 25C 50 100
0.2
1.5
0 0.01 0.02
0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA)
2.0
5.0
10

2000 TJ = 25C f = 100 MHz 1000 800 600 400 1.0 V VCE = 10 V C, CAPACITANCE (pF)
5.0 TJ = 25C 3.0 2.0 Cobo Cibo 1.0 0.7
200 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
0.5 0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
2554
MOTOROLA
NPN Silicon
MPS3646
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous 10 ms Pulse Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 15 40 40 5.0 300 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES 0.5 3.0 40 15 40 5.0 Vdc Vdc Vdc Vdc
mAdc
2555
MPS3646
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) hFE 30 25 15 0.73 120 0.2 0.28 0.5 0.3 0.95 1.2 1.7
Collector Emitter Saturation Voltage
VCE(sat)
Vdc
Base Emitter Saturation Voltage
VBE(sat)
Vdc

Current Gain Bandwidth Product (IC = 30 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 350 5.0 9.0 MHz pF pF
TurnOn Time Delay Time Rise Time TurnOff Time Fall Time ( (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) ) (Figure 1) (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) Vd Ad Ad ) (Figure 1) ton td tr toff tf ts 18 10 15 28 15 18 ns ns ns ns ns ns
Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) 1. Pulse Test: Pulse Width
Figure 1. Switching Time Equivalent Test Circuit

Test Condition IC mA A B C 10 10 100 VCC V 3 10 10 RS RC CS(max) VBE(off) pF 4 4 12 V 1.5 2.0 V1 V V2 V V3 V V1 0 VEB(off) < 2 ns ton t1 toff t1 VCC RC RB CS < 2 ns
330 270 0 560 960 560 96
10.55 4.15 10.70 4.65 6.55 6.35 4.65 6.55
V3 0 V2
2556
MPS3646
CURRENT GAIN CHARACTERISTICS
100 70 h FE, DC CURRENT GAIN 50 TJ = 125C 25C 30 20 15C 55C MPS3646 VCE = 1 V
10 1.0
2.0
3.0
5.0
7.0
30
50
70
100
200
200 TJ = 125C h FE, DC CURRENT GAIN 100 70 50 25C 15C 55C MPS3646 VCE = 1 V
30 20 1.0
2.0
3.0
5.0
7.0
30
50
70
100
200
Figure 2. Minimum Current Gain
270 t1 +10 V V 0 <1 ns 9.2 k PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2% 3V 8 pF CS < 4 pF C COPT TIME C < COPT C=0
Figure 3. QT Test Circuit NOTE 1

When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or stored in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collectorbase feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor on to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step IC . (IB1) and IB1 < < hFE
If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turnoff time of the transistor. Figure 3 shows the test circuit and Figure 4 the turnoff waveform. Given QT from Figure 13, the external C for worstcase turnoff in any circuit is: C = QT/V, where V is defined in Figure 3.
2557
MPS3646
ON CONDITION CHARACTERISTICS
1.0 VCE, MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA
0.8
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
5.0
7.0
10
20
30
50
1.0 VCE, MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA
0.8
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
5.0
7.0
10
20
30
50
Vsat , SATURATION VOLTAGE (VOLTS)
1.0 0.8 0.6 0.4 0.2 0
IC/IB = 10 TJ = 25C
1.2 MAX VBE(sat) MIN VBE(sat)
1.0 0.5 0 0.5 (25C to 125C) 1.0 1.5 2.0
qVC for VCE(sat)
(25C to 125C) ( 55C to 25C)
MAX VCE(sat)
qVB for VBE
( 55C to 25C)
1.0
2.0 3.0
50 70 100 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA)
200
40
200
2558
MPS3646
200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25C TJ = 125C
2V
Figure 8. Delay Time
Figure 9. Rise Time
50 TJ = 25C TJ = 125C t f , FALL TIME (ns) IC/IB = 10
200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25C TJ = 125C
t s , STORAGE TIME (ns)
30 20
IC/IB = 20
10 7.0 5.0 ts
^ ts 1/8 tf
IB1 = IB2
10 MAX TYP 7.0 CAPACITANCE (pF) Cibo Q, CHARGE (pC)
1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25C TJ = 125C
5.0
3.0
Cobo
2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10
20
Figure 12. Junction Capacitance
2559
MOTOROLA

NPN Silicon
MPS3904
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 60C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 60 6.0 100 625 5.0 450 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 1
2560
MPS3904
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 40 70 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 1.1 0.2 0.3 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 300 1.0 0.5 100 1.0 4.0 8.0 10 8.0 400 40 5.0 MHz pF pF k X 104 mhos dB
Delay Time Rise Time Storage Time Fall Time ( (VCC = 3.0 Vdc, VBE(off) = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 50 900 90 ns ns ns ns

10 < t1 < 500 s DUTY CYCLE = 2%
2561
MPS3904
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
MPS3904
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 MPS3904 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) MPS3904 TJ = 25C
100
0.8 IC = 1.0 mA 10 mA 50 mA
IB = 500 A 400 A 300 A
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2563
MPS3904
t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3904 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
2564
MPS3904
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 40 20 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO

Figure 19A.
100 s 10 s 1.0 s
dc
40
Figure 20.
2565
MOTOROLA

PNP Silicon
MPS3906
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 1
2566
MPS3906
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe NF 250 2.0 1.0 100 3.0 4.5 10 12 10 400 60 4.0 MHz pF pF k X 10 4
mmhos
dB
Delay Time Rise Time Storage Time Fall Time ( (VCC = 3.0 Vdc, VBE(off) = + 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1 0 Ad ) td tr ts tf 35 50 600 90 ns ns ns ns
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
2567
MPS3906
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
MPS3906
400
TJ = 125C 25C
200
100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2569
MPS3906
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3906 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
2570
MPS3906
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
10 s
1.0 s
40

4 0
2 0
2571
MOTOROLA
NPN Silicon
MPS4124
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 25 30 5.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter Base Breakdown Voltage (IC = 0, IE = 10 mA) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) V(BR)CEO 25 V(BR)CBO 30 V(BR)EBO 5.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
2572
MPS4124
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) hFE 120 60 VCE(sat) VBE(sat) 0.95 0.3 Vdc 360 Vdc

Current Gain Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = 100 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz) fT 170 Cob Cib hfe 120 NF 5.0 480 dB 13.5 4.0 pF pF MHz
2573
MOTOROLA
PNP Silicon
MPS4126
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 25 25 4.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter Base Breakdown Voltage (IC = 0, IE = 10 mA) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) V(BR)CEO 25 V(BR)CBO 25 V(BR)EBO 4.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
2574
MPS4126
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) hFE 120 60 VCE(sat) VBE(sat) 0.95 0.4 Vdc 360 Vdc

Current Gain Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 100 MHz) Output Capacitance (VCB = 5.0 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 1.0 V, f = 1.0 kHz) Noise Figure (IC = 100 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz) fT 170 Cob Cib hfe 120 NF 4.0 480 dB 11.5 4.5 pF pF MHz
2575
MOTOROLA
Transistor
PNP Silicon
MPS4250
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 40 40 40 5.0 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C mW mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 5.0 mA) Collector Emitter Sustaining Voltage(1) (IC = 5.0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 10 mA) Collector Cutoff Current (VCB = 50 V) (VCB = 40 V, TA = 65C) Emitter Cutoff Current (VEB = 3.0 V) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CES V(BR)CEO(sus) V(BR)CBO V(BR)EBO ICBO IEBO 10 3.0 20 nA mA nA 40 40 40 5.0 Vdc Vdc Vdc Vdc
2576
MPS4250
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) Collector Emitter Saturation Voltage(1) (IC = 10 mA, IB = 0.5 mA) Base Emitter Saturation Voltage(1) (IC = 10 mA, IB = 0.5 mA) hFE 250 250 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc

Output Capacitance (VCB = 5.0 V, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz) (IC = 0.5 mA, VCE = 5.0 V, f = 20 MHz) Noise Figure (IC = 20 mA, VCE = 5.0 V, RS = 10 k, f = 1.0 kHz, PBW = 150 Hz) (IC = 250 mA, VCE = 5.0 V, RS = 1.0 k, f = 1.0 kHz, PBW = 150 Hz) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. Cobo Cibo hfe 250 2.0 NF 2.0 2.0 800 dB 6.0 16 pF pF
2577
MOTOROLA
High Frequency Transistor

NPN Silicon
MPS5179
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150C) VCEO(sus) V(BR)CBO V(BR)EBO ICBO 0.02 1.0 12 20 2.5 Vdc Vdc Vdc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 25 250 0.4 1.0 Vdc Vdc
2578
MPS5179

Current Gain Bandwidth Product(1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz) Noise Figure (See Figure 1) (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz) CommonEmitter Amplifier Power Gain (See Figure 1) (VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz) 1. fT is defined as the frequency at which |hfe| extrapolates to unity. fT Ccb hfe rbCc NF Gpe 900 25 3.0 15 2000 1.0 300 14 5.0 MHz pF ps dB dB
TYPE 1N3195 TYPE 1N3195 L3 1200 91 L1 C2 2.0 10 10 k 1200 Q 1.0 5.0 EXTERNAL SHIELD L2 0.1 F 0.001 F RFC 1.0 H 0.1 F +VCC 1200 2.0 10 C7 TO 50 LOAD
DC COMMON
FROM 50 SOURCE 0.02 F Cin 3.0 35 VEE
2.0 10 C6
L1 13/4 Turns, #18 AWG, 0.5 L, 0.5 Diameter L2 2 Turns, #16 AWG, 0.5 L, 0.5 Diameter L3 2 Turns, #13 AWG, 0.25 L, 0.5 Diameter (Position 1/4 from L2)
Figure 1. 200 MHz Amplifier Power Gain and Noise Figure Circuit
2579
MOTOROLA
NPN Silicon
MPS6428
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICES ICBO IEBO 50 60 0.025 0.01 0.01 Vdc Vdc
mA mA mA
2580
MPS6428
ON CHARACTERISTICS
DC Current Gain (VCE = 5.0 Vdc, IC = 0.01 mAdc) (VCE = 5.0 Vdc, IC = 0.1 mAdc) (VCE = 5.0 Vdc, IC = 1.0 mAdc) (VCE = 5.0 Vdc, IC = 10 mAdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 250 250 250 VCE(sat) VBE(on) 0.56 0.2 0.6 0.66 Vdc 650 Vdc

Current Gain Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) fT Cobo Cibo hie hre hfe hoe 100 3.0 2.0 200 5.0 700 3.0 8.0 30 20 800 50 MHz pF pF k X 10 4
mmhos
NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS

NF VT Max (1) Noise Figure/Voltage (VCE = 5.0 V, IC = 0.1 mA, TA = 25C) 1. RS = 10 k, BW = 1.0 Hz, f = 100 Hz 2. RS = 50 k, BW = 15.7 kHz, f = 10 Hz10 kHz 3. RS = 500 , BW = 1.0 Hz, f = 10 Hz 7.0 18.1 NF VT Max (2) 6.0 5700 NF VT Max (3) 3.5 4.3 dB Unit nV
2581
MOTOROLA
NPN Silicon
2 BASE
COLLECTOR 3
MPS6507
1 EMITTER
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 60C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 1.0 nAdc mAdc 20 30 3.0 Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE 25 75
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. fT Cobo hfe 700 20 800 1.25 2.5 MHz pF
2582
MOTOROLA
COLLECTOR 3 2 BASE
1 EMITTER
NPN MPS6521* PNP MPS6523

COLLECTOR 3 2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6521 MPS6523 Collector Base Voltage MPS6521 MPS6523 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 4.0 100 625 5.0 1.5 12 55 to +150 25 Vdc mAdc mW mW/C Watts mW/C C Symbol VCEO 25 25 Vdc
1 2 3
NPN
PNP
Unit Vdc
Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO 0.05 0.05 25 4.0 Vdc Vdc
mAdc
2583
NPN MPS6521 PNP MPS6523

ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) hFE MPS6521 MPS6521 MPS6523 MPS6523 VCE(sat) 150 300 150 300 600 600 0.5 Vdc

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k , Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) Cobo NF 3.5 3.0 pF dB
2584

NPN MPS6521
+ 3.0 V 300 ns DUTY CYCLE = 2% 0.5 V <1.0 ns +10.9 V 10 k 275
10 < t1 < 500 s DUTY CYCLE = 2% 0
+ 3.0 V t1 +10.9 V 10 k 275
CS < 4.0 pF*
9.1 V
< 1.0 ns
1N916
CS < 4.0 pF*

(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A
2585

NPN MPS6521

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband
2586

NPN MPS6521

400
TJ = 125C
200
25C
100
IB = 500 A 400 A 300 A
0.6
60 200 A 40 100 A 20
0.4
0.2
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
Figure 11. On Voltages Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 12. Temperature Coefficients 2587

NPN MPS6521

t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50

NPN MPS6521
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

4 0
2 0
Figure 19A.
100 s 10 s 1.0 s
dc
40
Figure 20.
2589

PNP MPS6523 TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k

1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
10 Hz to 15.7 kHz Noise Figure is Defined as: NF 0.5 dB
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)

PNP MPS6523

400
TJ = 125C 25C
200
100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
Figure 29. On Voltages Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 30. Temperature Coefficients 2591

PNP MPS6523

t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS6523 hfe 100 @ IC = 1.0 mA MPS6521 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
MPS6523 hfe 100 @ IC = 1.0 mA

PNP MPS6523 TYPICAL DYNAMIC CHARACTERISTICS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
D = 0.5
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
10 s
1.0 s
40

A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The MPS6523 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
4 0
2 0
Figure 39. Typical Collector Leakage Current Motorola SmallSignal Transistors, FETs and Diodes Device Data 2593
MOTOROLA
Audio Transistor
NPN Silicon
COLLECTOR 3 2 BASE
MPS6560
1 EMITTER
MAXIMUM RATINGS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/mW C/mW

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 4.0 Vdc, IC = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 25 25 5.0 100 100 100 Vdc Vdc Vdc nAdc nAdc nAdc
REV 1
2594
MPS6560
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 35 50 50 VCE(sat) VBE(on) 200 0.5 1.2 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width fT Cobo 60 30 MHz pF
2595
MOTOROLA
NPN MPS6601 MPS6602* PNP MPS6651 MPS6652*

MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6601/6651 MPS6602/6652 Collector Base Voltage MPS6601/6651 MPS6602/6652 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 55 to +150 Vdc mAdc mW mW/C Watts mW/C C Symbol VCEO 25 40 Vdc Value Unit Vdc
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6602/6652 ICBO MPS6601/6651 MPS6602/6652 0.1 0.1 V(BR)CEO MPS6601/6651 MPS6602/6652 V(BR)CBO MPS6601/6651 MPS6602/6652 V(BR)EBO ICES 0.1 0.1 Adc 25 40 4.0 Vdc Adc 25 40 Vdc Vdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
2596

ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 50 50 30 VCE(sat) VBE(on) 0.6 1.2 Vdc Vdc

Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 100 30 MHz pF
Delay Time Rise Time Storage Time Fall Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc mAdc, tp 300 ns Duty Cycle) td 25 30 250 50 ns ns ns ns
tr ts tf
TURNON TIME 1.0 V VCC +40 V 5.0 ms +10 V 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS Vin 100 RB RL OUTPUT Vin
TURNOFF TIME +VBB VCC +40 V 100 RB 5.0 mF 100 * CS RL OUTPUT
t 6.0 pF
t 6.0 pF
2597

300 200 h FE , CURRENT GAIN h FE , CURRENT GAIN 100 70 50 VCE = 1.0 V TJ = 25C 200
100 70 50 VCE = 1.0 V TJ = 25C 10 100 IC, COLLECTOR CURRENT (mA) 1000
30
20 10
1000
Figure 2. MPS6601/6602 DC Current Gain
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
300 200
f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
300 200
100 70 50 VCE = 10 V TJ = 25C f = 30 MHz 10 100 200 1000
100 70 50 VCE = 10 V TJ = 25C f = 30 MHz 100 200 1000
30 10
1.0
TJ = 25C
1.0 VBE(SAT) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS)
TJ = 25C VBE(SAT) @ IC/IB = 10
0.6
VBE(ON) @ VCE = 1.0 V
0.6
0.4
0.4
0.2 0 1.0
VCE(SAT) @ IC/IB = 10
0.2
VCE(SAT) @ IC/IB = 10
10
100
1000
0 1.0
10
100
1000
2598

80 TJ = 25C 60 120 160 TJ = 25C
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
40
Cib
80 Cib 40 Cob Cob Cib 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
20 Cob 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
0 Cob Cib
10 VCE = 5.0 V f = 1.0 kHz TA = 25C IC = 100 mA
10 VCE = 5.0 V f = 1.0 kHz TA = 25C
6.0
8.0
8.0
6.0 IC = 100 mA
4.0
4.0
2.0 0 10 100 1k 10 k Rs, SOURCE RESISTANCE (OHMS)
2.0 0 10 100 1k 10 k Rs, SOURCE RESISTANCE (OHMS)
Figure 10. MPS6601/6602 Noise Figure
Figure 11. MPS6651/6652 Noise Figure
10 k 5k 3k 1k t, TIME (NS) 500 ts 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
10 k 5k 3k 1k t, TIME (NS) 500 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 ts td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
Figure 12. MPS6601/6602 Switching Times
2599

0.8 0.8
R qVB , TEMPERATURE COEFFICIENT (mV/ C)
1.2
R qVB , TEMPERATURE COEFFICIENT (mV/C)
1.2
1.6
RqVB for VBE
1.6 RqVB for VBE 2.0
2.0
2.4 2.8 1.0
2.4 2.8 1.0
10
100
1000
10
100
1000
1k I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) 500 TC = 25C 1.0 MS
1 k 500 TC = 25C 1.0 MS
200 100 50
1.0 s
200 100 50
1.0 s
20 10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 40
MPS6601 MPS6602
MPS6651 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 5.0 10 20 40
20 10
VCE, COLLECTOREMITTER VOLTAGE
VCE, COLLECTOREMITTER VOLTAGE
Figure 16. Safe Operating Area
Figure 17. Safe Operating Area
1.0 VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25C 0.8
1.0 TJ = 25C 0.8
0.6 IC = 1000 mA 0.4 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100
0.6 IC = 1000 mA 0.4 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100
0.2 IC = 10 mA 0 0.01 0.1
0.2
IC = 10 mA
0 0.01
0.1
Figure 18. MPS6601/6602 Saturation Region
Figure 19. MPS6651/6652 Saturation Region
2600

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 RJC(t) = (t) JC RJC = 100C/W MAX RJA(t)d = r(t) JA RJA = 357C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) JC(t) 10 20 50 100
0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001
t, TIME (SECONDS)
2601
MOTOROLA

NPN Silicon
MPS6714 MPS6715
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6714 MPS6715 Collector Base Voltage MPS6714 MPS6715 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 50 5.0 1.0 1.0 8.0 2.5 20 55 to +150 Vdc Adc Watts mW/C Watts mW/C C Symbol VCEO 30 40 Vdc Value Unit Vdc
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS6714 MPS6715 IEBO V(BR)CEO MPS6714 MPS6715 V(BR)CBO MPS6714 MPS6715 V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
2602
MPS6714 MPS6715
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 60 50 VCE(sat) VBE(on) 250 0.5 1.2 Vdc Vdc

CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width 300 200 h FE , CURRENT GAIN VCE , COLLECTOR VOLTAGE (VOLTS) Ccb hfe 2.5 30 25 pF

1.0 TJ = 25C 0.8
0.6 IC = 1000 mA IC = 10 mA IC = 50 mA IC = 100 mA IC = IC = 500 mA 250 mA
100 70 50 VCE = 1.0 V TJ = 25C
0.4
0.2 0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
TJ = 25C VBE(sat) @ IC/IB = 10
qVB , TEMPERATURE COEFFICIENT (mV/C)
1.0
0.8
1.2
0.6
1.6
qVB FOR VBE

2.0
0.4
0.2 0 1.0 2.0
2.4
5.0 10 20
50 100 200 500 1000
2603
MPS6714 MPS6715
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 60 80 TJ = 25C
100 70 50 VCE = 10 V TJ = 25C f = 20 MHz 10 20 50 100 200 1000
40
Cibo
20 Cobo Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0
1k IC , COLLECTOR CURRENT (mA) 1.0 s 500 1.0 ms 100 ms
200 TA = 25C 100 50 TC = 25C DUTY CYCLE 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS6714 MPS6715 2.0 5.0 10 20 30 40
20 10 1.0
VCE, COLLECTOREMITTER VOLTAGE (V)
2604
MOTOROLA

NPN Silicon
MPS6717
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 80 80 5.0 0.1 10 Vdc Vdc Vdc Adc Adc
2605
MPS6717
ON CHARACTERISTICS

CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Ccb hfe 2.5 30 25 pF
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
2606
MPS6717
1.6 VB for VBE
20
2.0
2.4
2.8 0.5
1.0
2.0
200
500
4.0 0.1

300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 MPS6717 2.0 5.0 10 20 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) TA = 25C TC = 25C 1.0 s dc 1.0 ms 100 s
100 70 50
dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
2607
MOTOROLA
One Watt Darlington Transistors

NPN Silicon
COLLECTOR 3 BASE 2
MPS6724 MPS6725
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPS6724 40 50 12 1000 1.0 8.0 2.5 20 55 to +150 MPS6725 50 60 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS6724 MPS6725 IEBO V(BR)CES MPS6724 MPS6725 V(BR)CBO MPS6724 MPS6725 V(BR)EBO ICBO 100 100 100 nAdc 50 60 12 Vdc nAdc 40 50 Vdc Vdc
REV 1
2608
MPS6724 MPS6725
DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 1000 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 2.0 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 5.0 Vdc) hFE 25,000 4,000 VCE(sat) VBE(on) 40,000 1.5 2.0 Vdc Vdc

CurrentGain Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Ccb 100 1000 10 MHz pF

CURRENT LIMIT DUTY CYCLE 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 ms 1.0 ms 1.0 k 1.0 s 500 TA = 25C 200 1.5 TC = 25C
3.0 k I C , COLLECTOR CURRENT (mA) 2.0 k
2.0
5.0
10
20
30
TJ = 125C h FE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 55C VCE = 5.0 V
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
200 k
3.0 TJ = 25C 2.5 IC = 10 mA IC = 50 mA IC = 250 mA IC = 500 mA
25C
2.0
1.5
1.0
3.0 k 2.0 k 5.0 7.0 10
20
30
50 70 100
200 300
500
0.5 0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
2609
MPS6724 MPS6725
TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.6
1.0
*APPLIES FOR IC/IB hFE/3.0
25C TO 125C
2.0
*qVC FOR VCE(sat)

55C TO 25C
3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
0.8
VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 500
0.6
6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
4.0 h FE , SMALLSIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25C f = 100 MHz C, CAPACITANCE (pF)
20 TJ = 25C 10 7.0 5.0 Cobo 3.0 2.0 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
2.0
1.0 0.8 0.6 0.4 0.2 0.5
Cibo
2610
MOTOROLA

PNP Silicon
MPS6726 MPS6727
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6726 MPS6727 Collector Base Voltage MPS6726 MPS6727 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 50 5.0 1.0 1.0 8.0 2.5 20 55 to +150 Vdc Adc Watts mW/C Watts mW/C C Symbol VCEO 30 40 Vdc Value Unit Vdc
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) MPS6726 MPS6727 IEBO V(BR)CEO MPS6726 MPS6727 V(BR)CBO MPS6726 MPS6727 V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
2611
MPS6726 MPS6727

CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width Ccb hfe 2.5 30 25 pF

1.0 VCE , COLLECTOR VOLTAGE (VOLTS) IC = 10 mA IC = 50 mA IC = 100 mA IC = IC = IC = 250 500 mA 1000 mA mA
200
0.8
h FE , CURRENT GAIN
100 70 50 VCE = 1.0 V TJ = 25C
0.6
0.4
0.2 TJ = 25C 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
20 10
20
50
100
200
500
1000
50 100
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(SAT) @ IC/IB = 10
qV B, TEMPERATURE COEFFICIENT (mV/ C)
0.8
1.2
0.6
1.6
qVB for VBE

2.0
0.4
0.2
VCE(SAT) @ IC/IB = 10 5.0 10 20 50 100 200 500 1000
2.4
0 1.0 2.0
2.8 1.0 2.0
5.0
10
20
50 100 200
500 1000
2612
MPS6726 MPS6727
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 120 160 TJ = 25C
100 70 50
VCE = 10 V TJ = 25C f = 20 MHz
80 Cibo 40 Cobo
30 10
0 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
1.0 k 1.0 s I C , COLLECTOR CURRENT (mA) 500 TA = 25C TC = 25C 1.0 ms
100 ms
200 100 50
DUTY CYCLE 10% MPS6726 MPS6727 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 30 40
20 10 1.0
2613
MOTOROLA
NPN MPS8098 MPS8099* PNP MPS8598 MPS8599*

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg 6.0 500 625 5.0 1.5 12 55 to +150 MPS8099 MPS8599 80 80 MPS8598 MPS8599 5.0 Vdc mAdc mW mW/C
1
Unit Vdc Vdc
Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS8098, MPS8598 MPS8099, MPS8599 IEBO MPS8098, MPS8099 MPS8598, MPS8599 0.1 0.1 V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 ICES ICBO 0.1 0.1 Adc 6.0 5.0 0.1 Adc Adc 60 80 Vdc 60 80 Vdc Vdc
2614

DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) MPS8098, MPS8598 MPS8099, MPS8599 hFE 100 100 75 VCE(sat) VBE(on) 0.5 0.6 0.7 0.8 0.4 0.3 Vdc 300 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width MPS8098, MPS8099 MPS8598, MPS8599 Cibo MPS8098, MPS8099 MPS8598, MPS8599 25 30 fT Cobo 6.0 8.0 pF 150 MHz pF
TURNON TIME 1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT Vin
TURNOFF TIME +VBB VCC +40 V RL OUTPUT RB 5.0 mF 100 * CS
100
t 6.0 pF
t 6.0 pF
2615

f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 TJ = 25C 200 5.0 V VCE = 1.0 V 100 70 50 f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 TJ = 25C 200 5.0 V VCE = 1.0 V 100 70 50
30 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
30 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
Figure 2. MPS8098/99 CurrentGain Bandwidth Product
Figure 3. MPS8598/99 CurrentGain Bandwidth Product
40 TJ = 25C 20 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Cibo 10 8.0 6.0 4.0 Cobo 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
40 TTJ==25C J 25C 20 Cibo 10 8.0 6.0 Cobo 4.0 2.0 0.1 0.2
0.5 1.0
2.0
5.0
10 20
50 100
Figure 4. MPS8098/99 Capacitance
Figure 5. MPS8598/99 Capacitance
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20
VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
ts
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30
ts
VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
tf
tf
tr
td @ VBE(off) = 0.5 V 10 10 20 30 50 70 100
tr 200
20 10 td @ VBE(off) = 0.5 V 10 20 30 50 70 100 200
2616

1.0 k 700 500 300 200 100 70 50 30 20 DUTY CYCLE 10% 10 1.0 2.0 3.0 5.0 7.0 10 1.0 k 700 500 300 200 100 70 50 30 20 10 50 70 100 1.0
I C , COLLECTOR CURRENT (mA)
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8098 MPS8099 20 30
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE 10% MPS8599 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Figure 8. MPS8098/99 ActiveRegion Safe Operating Area

400 TJ = 125C h FE , DC CURRENT GAIN 200 55C h FE, DC CURRENT GAIN 25C 300
Figure 9. MPS8598/99 ActiveRegion Safe Operating Area
TJ = 125C 200 25C
100 70 50 55C VCE = 5.0 V
100 80 60 40 0.2 0.3 0.5 VCE = 5.0 V
1.0
2.0 3.0 5.0
10
20 30
50
100 200
30 0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
1.0
TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V
1.0
TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V
0.6
0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
Figure 12. MPS8098/99 ON Voltages
Figure 13. MPS8598/99 ON Voltages
2617

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 2.0 IC = 20 mA IC = 50 mA IC = 100 mA 2.0 IC = 10 mA IC = 20 mA IC = 50 mA IC = 100 mA IC = 200 mA
TJ = 25C IC = 200 mA
1.6
1.6
1.2
1.2
0.8
0.8
0.4 IC = 10 mA 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
0.4 TJ = 25C 0 0.05 0.1 0.02
0.2
0.5
1.0
2.0
5.0
10
20
Figure 14. MPS8098/99 Collector Saturation Region
Figure 15. MPS8598/99 Collector Saturation Region
1.4
1.0
1.0
1.4
1.8 RqVB FOR VBE 2.2 55C TO 125C
1.8
RqVB FOR VBE 55C TO 125C
2.2
2.6 3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
2.6 3.0 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
Figure 16. MPS8098/99 BaseEmitter Temperature Coefficient

1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500
Figure 17. MPS8598/99 BaseEmitter Temperature Coefficient
D = 0.5 0.2 0.1 0.05 SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1.0 k 2.0 k 5.0 k ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 10 k 20 k 50 k 100 k
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
Figure 18. MPS8098, MPS8099, MPS8598 and MPS8599 Thermal Response
2618
MOTOROLA
NPN MPSA05 MPSA06* PNP MPSA55 MPSA56*

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA05 MPSA55 60 60 4.0 500 625 5.0 1.5 12 55 to +150 MPSA06 MPSA56 80 80 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA05, MPSA55 MPSA06, MPSA56 V(BR)CEO MPSA05, MPSA55 MPSA06, MPSA56 V(BR)EBO ICES ICBO 0.1 0.1 60 80 4.0 0.1 Vdc Adc Adc Vdc
1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2619
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56

ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) 0.25 1.2 Vdc Vdc

Current Gain Bandwidth Product(3) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) fT MPSA05 MPSA06 MPSA55 MPSA56 100 MHz
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
50
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
TURNON TIME 1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT Vin
TURNOFF TIME +VBB VCC +40 V RL OUTPUT RB 5.0 mF 100 * CS
100
t 6.0 pF
t 6.0 pF
2620

f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25C f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 200 VCE = 2.0 V TJ = 25C 100 70 50
100 70 50
30 20 2.0 3.0
30 2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
5.0 7.0 10
20 30
50 70 100
200
Figure 2. MPSA05/06 CurrentGain Bandwidth Product
Figure 3. MPSA55/56 CurrentGain Bandwidth Product
80 60 40 C, CAPACITANCE (pF) Cibo 20 C, CAPACITANCE (pF) TJ = 25C
100 70 50 30 20 Cibo TJ = 25C
10 8.0 6.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 Cobo 50 100
10 7.0 5.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Cobo
50 100
Figure 4. MPSA05/06 Capacitance
Figure 5. MPSA55/56 Capacitance
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 5.0 7.0 10
ts t, TIME (ns)
1.0 k 700 500 300 200 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
ts
tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 500
tf
td @ VBE(off) = 0.5 V 20 30 50 70 100
tr 200 300 500
10 5.0 7.0 10
Figure 6. MPSA05/06 Switching Time
Figure 7. MPSA55/56 Switching Time
2621

1.0 k 700 500 300 200 TA = 25C 100 70 50 30 20 MPSA05 10 1.0 2.0 3.0 5.0 7.0 10 MPSA06 20 30 50 70 100 TC = 25C 1.0 k 700 500 300 200 TA = 25C 100 70 50 30 20 10 1.0 2.0 3.0 5.0 7.0 10 TC = 25C 1.0 s
100 ms 1.0 ms 1.0 s
100 ms 1.0 ms
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA55 MPSA56 20 30 50 70 100
Figure 8. MPSA05/06 ActiveRegion Safe Operating Area

400 TJ = 125C VCE = 1.0 V h FE , DC CURRENT GAIN 25C 55C 100 80 60 40 0.5 h FE, DC CURRENT GAIN 200 200 400
Figure 9. MPSA55/56 ActiveRegion Safe Operating Area
TJ = 125C
VCE = 1.0 V
25C 55C 100 80 60 40 0.5 1.0 2.0
1.0
2.0 3.0 5.0
10
20 30
50
100
200 300 500
5.0 10
20
50
100 200
500
Figure 10. MPSA05/06 DC Current Gain
Figure 11. MPSA55/56 DC Current Gain
1.0
TJ = 25C VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Figure 12. MPSA05/06 ON Voltages
Figure 13. MPSA55/56 ON Voltages
2622

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 50 mA 0.6 IC = 100 mA IC = 250 mA IC = 500 mA 1.0 TJ = 25C 0.8 IC = 50 mA 0.6 IC = 100 mA IC = 250 mA IC = 500 mA
0.4 IC = 10 mA
0.4 IC = 10 mA
0.2 0
0.2
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0 0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 14. MPSA05/06 Collector Saturation Region
Figure 15. MPSA55/56 Collector Saturation Region
1.2
0.8
0.8
1.2
1.6 RqVB for VBE
1.6 RqVB for VBE
2.0
2.0
2.4 2.8 0.5
2.4 2.8 0.5 1.0 2.0
1.0
2.0
5.0
10
20
50
100
200
500
5.0
10
20
50
100 200
500
Figure 16. MPSA05/06 BaseEmitter Temperature Coefficient

1.0 0.7 0.5 0.3
Figure 17. MPSA55/56 BaseEmitter Temperature Coefficient
D = 0.5 0.2 ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 5.0 k 10 k 20 k 50 k 100 k
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
0.2 0.1 0.05 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
2623
MOTOROLA
NPN Silicon
COLLECTOR 3 BASE 2
MPSA13 MPSA14 *
EMITTER 1
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
2624
MPSA13 MPSA14
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSA13 MPSA14 MPSA13 MPSA14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)

CurrentGain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| S ftest. fT 125 MHz
RS
in en
IDEAL TRANSISTOR
2625
MPSA13 MPSA14
(VCE = 5.0 Vdc, TA = 25C)
IC = 1.0 mA
200
100 70 50 30 20
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2626
MPSA13 MPSA14
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.0
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
6.0 5.0 7.0 10
500
2627
MPSA13 MPSA14
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
2628
MOTOROLA
Chopper Transistor
NPN Silicon
MPSA17
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value 40 15 100 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)EBO ICBO IEBO 40 15 100 100 Vdc Vdc nAdc nAdc
(Replaces MPSA16/D)
2629
MPSA17
ON CHARACTERISTICS

2630
MPSA17
500 TA = 25C VCE = 10 Vdc
300 200
100 70 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA)
1000 h fe , SMALL SIGNAL CURRENT GAIN 700 500 400 300 200 f = 1.0 kHz TA = 25C VCE = 5.0 Vdc
2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE (SAT) @ IC/IB = 10 2.0 3.0 5.0 10 20 30 50 100 VBE(on)
100 0.1
0.3
0.5 0.7 1.0
3.0
5.0 7.0 10
0 1.0
Figure 2. Small Signal Current Gain
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz)
200
10 7.0
TA = 25C
100 70 50 TA = 25C VCE = 10 Vdc 30 20 0.2
Cob , OUTPUT CAPACITANCE (pF) 5.0 10 20
4.0
2.0
1.0 0.5 1.0 2.0 0.4 0.7 1.0 2.0 4.0 7.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
2631
MOTOROLA

NPN Silicon
MPSA18
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO 45 45 6.5 1.0 50 Vdc Vdc Vdc nAdc
2632
MPSA18
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 400 500 500 500 VCE(sat) VBE(on) 0.08 0.6 0.2 0.3 0.7 Vdc 580 850 1100 1150 1500 Vdc

CurrentGain Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 100 Hz) Equivalent Short Circuit Noise Voltage (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 100 Hz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT Ccb Ceb NF VT 0.5 4.0 6.5 1.5 nV Hz 100 160 1.7 5.6 3.0 6.5 MHz pF pF dB
RS
in en
IDEAL TRANSISTOR
2633
MPSA18
10 7.0 5.0
100 kHz 5.0 10

8.0

IC = 10 mA
3.0 mA 1.0 mA 300 A
12
2634
MPSA18
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
0.4 0.8
0.6
VBE @ VCE = 5.0 V
1.2
0.4
1.6
TJ = 25C to 125C
20
50 100
500
300 200
2635
MOTOROLA
NPN Silicon
MPSA20
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
2636
MPSA20
ON CHARACTERISTICS
DC Current Gain(2) (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc

Current Gain Bandwidth Product(2) (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT Cobo 125 4.0 MHz pF

10 < t1 < 500 s DUTY CYCLE = 2%
2637
MPSA20
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 5.0 10 A 3.0
100 A
30 A

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
10 Hz to 15.7 kHz
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
MPSA20
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 MPSA20 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) MPSA20 TJ = 25C
100
0.8 IC = 1.0 mA 10 mA 50 mA
IB = 500 A 400 A 300 A
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
1.4
1.6 0.8
0.8 25C to 125C 1.6
qVB for VBE

2.4 0.1 0.2
55C to 25C 50 100
2639
MPSA20
t, TIME (ns)
50 70
100

10 7.0 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPSA20 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPSA20 hfe 200 @ IC = 1.0 mA
2640
MPSA20
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k

A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 19 by the steady state value RJA. Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN569.
4 0
2 0
Figure 19A.
100 s 10 s 1.0 s
dc
40
Figure 20.
2641
MOTOROLA
Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 2
MPSA27
EMITTER 1
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD MPSA27 60 10 500 625 5.0 55 to +150 Unit Vdc Vdc mAdc mW mW/C C
TJ, Tstg

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc) V(BR)CES V(BR)CBO ICBO 60 60 100 Vdc Vdc nAdc
ICES
500
nAdc
IEBO
100
nAdc
2642
MPSA27
DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) hFE 10,000 10,000 VCE(sat) VBE(on) 1.5 2.0 Vdc Vdc

Small Signal Current Gain (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. hfe 1.25 2.4
2643
MPSA27
VCE = 5.0 V 120 h FE , DC CURRENT GAIN (k) V, VOLTAGE (VOLTS) 100 80 60 40 20 0 1.0 2.0 3.0 TA = 55C 10 20 30 100 200 500 1k TA = 25C TA = 125C 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 3.0 10 20 30 VCE(S) @ IC/IB = 1.0 k 100 200 500 1k TA = 25C VBE(S) @ IC/IB = 1.0 k VBE(ON) @ VCE = 5.0 V
1.6 hfe , SMALLSIGNAL CURRENT GAIN 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k IC = 10 mA IC = 100 mA IC = 500 mA IC = 250 mA TA = 25C
4.0 VCE = 5.0 V f = 100 MHz TA = 25C
2.0
1.0 0.8 0.6 0.4 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
1k I C , COLLECTOR CURRENT (mA) 500
1.0 ms 1.0 s
100 ms
200 TA = 25C 100 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 4.0 6.0 10 20 40 50 60 TC = 25C
20 10 1.0
2644
MOTOROLA
NPN Silicon
COLLECTOR 3
MPSA28 MPSA29*
BASE 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 55 to +150 MPSA29 100 100 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSA28 MPSA29 ICES MPSA28 MPSA29 IEBO 500 500 100 nAdc V(BR)CES MPSA28 MPSA29 V(BR)CBO MPSA28 MPSA29 V(BR)EBO ICBO 100 100 nAdc 80 100 12 Vdc nAdc 80 100 Vdc Vdc
2645
MPSA28 MPSA29
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10,000 10,000 VCE(sat) VBE(on) 0.7 0.8 1.4 1.2 1.5 2.0 Vdc Vdc

CurrentGain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 2. fT = hfe S ftest. fT Cobo 125 200 5.0 8.0 MHz pF
2646
MPSA28 MPSA29
VCE = 5.0 V h FE , DC CURRENT GAIN (k) 200 100 50 20 10 5.0 2.0 1.0 1.0 2.0 5.0 10 20 50 100 200 500 1k TA = 25C TA = 55C V, VOLTAGE (VOLTS) TA = 125C 1.8 VBE(S) @ IC/IB = 1.0 k 1.6 TA = 25C 1.4 1.2 1.0 0.8 0.6 1.0 2.0 5.0 VCE(S) @ IC/IB = 1.0 k VBE(ON) @ VCE = 5.0 V
10
20
50
100
200
500
1k
2.4 25C to 125C VCE , COLLECTOR VOLTAGE (VOLTS) TA = 25C 2.0 IC = 500 mA 1.6 IC = 250 mA
qV, TEMPERATURE COEFFICIENT (mV/ C)
1.0
qVC for VCE(S)

2.0
55C to 25C
3.0
25C to 125C 55C to 25C
1.2
IC = 10 mA
IC = 100 mA
4.0
qVB for VBE

5.0 1.0 2.0 5.0 10 20 50 100 200 500
0.8
0.4 0.2 1.0 2.0 10 20 100 200 1 k 1.5 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
1k h fe , HIGH FREQUENCY CURRENT GAIN I C , COLLECTOR CURRENT (mA) 500 100 ms
10 5.0 VCE = 5.0 V TA = 25C f = 100 MHz
1.0 ms 1.0 s TA = 25C TC = 25C
200 100 50
2.0 1.0 0.5
20 10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA28 VALID FOR DUTY CYCLE 10% MPSA29
0.2 0.1 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300
2.0
5.0
10
20
50
100
2647
MOTOROLA

NPN Silicon
MPSA42* MPSA43
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA42 300 300 6.0 500 625 5.0 1.5 12 55 to +150 MPSA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/mW C/mW

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSA42 MPSA43 IEBO MPSA42 MPSA43 0.1 0.1 V(BR)CEO MPSA42 MPSA43 V(BR)CBO MPSA42 MPSA43 V(BR)EBO ICBO 0.1 0.1 Adc 300 200 6.0 Vdc Adc 300 200 Vdc Vdc
2648
MPSA42 MPSA43
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MPSA42 MPSA43 VBE(sat) hFE 25 40 40 VCE(sat) 0.5 0.4 0.9 Vdc Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width MPSA42 MPSA43 fT Ccb 3.0 4.0 50 MHz pF
2649
MPSA42 MPSA43
100
25C 50 55C 30 20 1.0
2.0
3.0
5.0
20
30
50
70
100
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
2.0 1.0 0.2
100
200
10 1.0
2.0
50
70 100
200
500
2650
MOTOROLA

NPN Silicon
MPSA44
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 500 500 6.0 0.1 500 0.1 Vdc Vdc Vdc Vdc Adc nAdc Adc
2651
MPSA44
DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 50 45 40 VCE(sat) VBE(sat) 0.4 0.5 0.75 0.75 Vdc 200 Vdc

Output Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width Cobo Cibo hfe 1.0 7.0 130 pF pF
2652
MPSA44
160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 55C 20 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 300 25C TA = 125C VCE = 10 V VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 0.5
0.4
IC = 1.0 mA
IC = 10 mA
IC = 50 mA
0.3 TA = 25C 0.2
0.1
0 10
30
100
300 1.0 k 3.0 k IB, BASE CURRENT (A)
10 k
50 k
1.0 TA = 25C VBE(sat) @ IC/IB = 10
1000 1.0 ms IC, COLLECTOR CURRENT (mA) 300 200 100 TA = 25C TC = 25C 100 s
1.0 s
0.6
0.4
20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE 10% 2.0 MPSA44 200 500
0.2
2.0 0 0.1 0.3 30 3.0 10 1.0 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0
20 50 10 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS)
100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 TA = 25C f = 1.0 MHz 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob |h fe |, SMALLSIGNAL CURRENT GAIN Cib
10
3.0 2.0 1.5 1.0 0.1
VCE = 10 V f = 10 MHz TA = 25C
0.2 0.3
1.0 3.0 10 IC, COLLECTOR CURRENT (mA)
30
100
2653
MPSA44
10 5.0 +9.7 V PW = 50 S DUTY CYCLE = 2.0% Vin
t, TIME ( s)
2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C VBE(off) = 4.0 Vdc tr td 50 100 Vin RB 0 4.0 V VCC RL Vout
0.2 0.1 1.0
CS 4.0 pF*
Figure 7. TurnOn Switching Times and Test Circuit
10 5.0 ts t, TIME ( s) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 tf 11.4 V +10.7 V
Vin
PW = 50 S DUTY CYCLE = 2.0%
0.2 0.1 1.0
VCC RL 100 Vin RB CS 4.0 pF* Vout
Figure 8. TurnOff Switching Times and Test Circuit

* Total Shunt Capacitance or Test Jig and Connectors.
2654
MOTOROLA
PNP Silicon
COLLECTOR 3
MPSA62 MPSA63 MPSA64 *

MPSA55, MPSA56
For Specifications, See MPSA05, MPSA06 Data
BASE 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA62 20 20 10 500 625 5.0 1.5 12 55 to +150 MPSA63 MPSA64 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Cutoff Current (VCB= 15 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES MPSA62 MPSA63, MPSA64 ICBO MPSA62 MPSA63, MPSA64 IEBO 100 100 100 nAdc 20 30 nAdc Vdc
2655
MPSA62 MPSA63 MPSA64

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSA63 MPSA64 MPSA62 MPSA63 MPSA64 VCE(sat) MPSA62 MPSA63, MPSA64 VBE(on) MPSA62 MPSA63, MPSA64 1.4 2.0 1.0 1.5 Vdc 5,000 10,000 20,000 10,000 20,000 Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc)

Current Gain Bandwidth Product(2) (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| S ftest. fT MPSA63, MPSA64 125 MHz
2656
MPSA62 MPSA63 MPSA64

55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
0 0.3 0.5
1.0
100 200 300
1000 IC, COLLECTOR CURRENT (mA) 1.0 ms 300 200 100 50 20 10 1.0 TA = 25C TC = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE 10%) MPSA62 MPSA63 2.0 4.0 6.0 10 20 40 60 VCE, COLLECTOR VOLTAGE (VOLTS) 1.0 s 100 s
4.0 3.0 2.0 1.0 0.4 0.2
0.1 1.0 2.0
5.0
10
20
50
100 200
500
1K
2657
MOTOROLA
PNP Silicon
MPSA70
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc mAdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
2658
MPSA70
ON CHARACTERISTICS

2659
MPSA70
(VCE = 5.0 Vdc, TA = 25C)

(VCE = 5.0 Vdc, TA = 25C)
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
MPSA70
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 MPSA70 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) TA = 25C MPSA70 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
IB = 400 A 350 A 250 A 200 A 150 A
0.6
0.4
40
100 A 50 A
0.2
20
1.4
qVB for VBE

0.2
55C to 25C
2.4 0.1
50
100
2661
MPSA70
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100

10 TJ = 25C 7.0 Cib 5.0
3.0 2.0 Cob
100 70 50 0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPSA70 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPSA70 hfe 200 @ IC = 1.0 mA
2662
MPSA70
0.2
0.01 0.01 0.02
0.05
0.1
0.2
0.5
1.0
500 1.0 k 2.0 k
10 s
1.0 s
40

4 0
2 0
2663
MOTOROLA
PNP Silicon
COLLECTOR 3 BASE 2
MPSA75 MPSA77
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD TJ, Tstg MPSA75 40 10 500 625 5.0 55 to +150 MPSA77 60 Unit Vdc Vdc Adc mW mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB= 30 V, IE = 0) (VCB = 50 V, IE = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 50 V, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc) MPSA75 MPSA77 MPSA75 MPSA77 MPSA75 MPSA77 ICES MPSA75 MPSA77 IEBO 500 500 100 nAdc V(BR)CES V(BR)CBO ICBO 100 100 nAdc 40 60 40 60 Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) hFE 10,000 10,000 VCE(sat) VBE 1.5 2.0 Vdc Vdc

Current Gain High Frequency (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) |hfe| 1.25 2.4
2664
MPSA75 MPSA77
55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
0 0.3 0.5
1.0
100 200 300
1000 IC, COLLECTOR CURRENT (mA) 1.0 ms 300 200 100 50 20 10 1.0 TA = 25C TC = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE 10%) MPSA75 MPSA77 2.0 4.0 6.0 10 20 40 60 VCE, COLLECTOR VOLTAGE (VOLTS) 1.0 s 100 s
4.0 3.0 2.0 1.0 0.4 0.2
0.1 1.0 2.0
5.0
10
20
50
100 200
500
1K
2665
MOTOROLA

PNP Silicon
MPSA92* MPSA93
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA92 300 300 5.0 500 625 5.0 1.5 12 55 to +150 MPSA93 200 200 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSA92 MPSA93 IEBO V(BR)CEO MPSA92 MPSA93 V(BR)CBO MPSA92 MPSA93 V(BR)EBO ICBO 0.25 0.25 0.1 Adc 300 200 5.0 Vdc Adc 300 200 Vdc Vdc
2666
MPSA92 MPSA93
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MPSA92 MPSA93 VCE(sat) MPSA92 MPSA93 VBE(sat) 0.5 0.4 0.9 Vdc 25 40 25 25 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width MPSA92 MPSA93 fT Ccb 6.0 8.0 50 MHz pF
2667
MPSA92 MPSA93
30 20 15 1.0 2.0 3.0 5.0 7.0 10 20 30 50 80 100
100 80 60 40 30 20 TJ = 25C VCE = 20 Vdc
0 1.0
2.0
50
100
500 1.0 ms 1.0 s
100 s
200 100
MPSA93 50
0.4
MPSA92
20 10
0.2
0 1.0
2.0
50
100
5.0 3.0
2668
MOTOROLA

VHF/UHF Transistors
NPN Silicon
MPSH10 MPSH11
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mW mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 100 100 Vdc Vdc Vdc nAdc nAdc
2669
MPSH10 MPSH11
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 0.5 0.95 Vdc Vdc

Current Gain Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) CommonBase Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) MPSH10 MPSH11 rbCc fT Ccb Crb 0.35 0.6 0.65 0.9 9.0 ps 650 0.7 MHz pF pF
2670
MOTOROLA
CATV Transistor
NPN Silicon
MPSH17
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD TJ, Tstg Value 15 20 3.0 350 2.81 55 to +150 Unit Vdc Vdc Vdc mW mW/C C
Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Symbol RqJA Max 357 Unit C/W

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 20 3.0 100 Vdc Vdc Vdc nAdc
2671
MPSH17
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 25 250 0.5

Current Gain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, f = 1.0 MHz) SmallSignal Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) fT Ccb hfe NF 800 0.3 30 0.9 6.0 MHz pF dB
FUNCTIONAL TEST
Amplifier Power Gain (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) Gpe 24 dB
2672
MOTOROLA
RF Amplifier Transistor
PNP Silicon
MPSH81
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD TJ, Tstg Value 20 20 3.0 350 2.81 55 to +150 Unit Vdc Vdc Vdc mW mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 20 20 3.0 100 100 Vdc Vdc Vdc nAdc nAdc
2673
MPSH81
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 5.0 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 5.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 0.5 0.9 Vdc Vdc

Current Gain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) CollectorEmitter Capacitance (IB = 0, VCB = 10 Vdc, f = 1.0 MHz) fT Ccb Cce 600 0.85 0.65 MHz pF pF
2674
MPSH81
TYPICAL COMMONBASE yPARAMETERS
(VCB = 10 Vdc, TA = 25C, Frequency Points in MHz)
30 40 50 250 MHz b ib , (mmhos) 8.0 mA 70 80 90 12 mA 100 110 20 0 20 40 60 gib, (mmhos) 80 100 120 140 7.0 8.0 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 grb, (mmhos) 100 MHz brb , (mmhos) 60 3.0 4.0 IC = 12 mA 5.0 6.0 930 8.0 mA 4.0 mA 930 MHz 450 MHz IC = 4.0 mA 1.0 2.0 450 0 100 MHz 250
Figure 1. Input Admittance
Figure 2. Reverse Transfer Admittance
120 110 100 90 bfb , (mmhos) 80 70 60 50 40 30
100 MHz 250 bob , (mmhos)
14 12 12 mA 8.0 mA 10 8.0 6.0 4.0 2.0 0 450 250 100 MHz IC = 4.0 mA 12 mA 8.0 mA
930
450 930
IC = 4.0 mA
20 120 100
80
60
40 gfb, (mmhos)
20
20
40
2.0
0.5
0.5
1.0
1.5 gob, (mmhos)
2.0
2.5
3.0
3.5
Figure 3. Forward Transfer Admittance
1000 900 800 700 600 500 400 300 200 100 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) VCE = 10 V f = 100 MHz
2675
MOTOROLA
NPN Silicon
MPSL01
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 75 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 120 140 5.0 1.0 100 Vdc Vdc Vdc Adc nAdc
2676
MPSL01
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)(1) hFE VCE(sat) VBE(sat) 1.2 1.4 0.20 0.30 Vdc 50 300 Vdc

Current Gain Bandwidth Product(1) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT Ccb hfe 60 30 8.0 MHz pF
2677
MPSL01
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
IC = ICES
0.3
0.1 0.2 0 0.1 0.2 0.3 0.4 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
2678
MPSL01
1.0 V, TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 55C to +135C
qVC for VCE(sat)
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 1.0 2.0 3.0 5.0 10 20 30 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 50 100
qVB for VBE(sat)
TJ = 25C
Cobo
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns)
5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 100 50 0.2 0.3 0.5 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
1.0
50
100
200
100
200
2679
MOTOROLA
PNP Silicon
MPSL51
1 2 3
MAXIMUM RATINGS

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 100 100 4.0 1.0 100 Vdc Vdc Vdc Adc nAdc
2680
MPSL51
DC Current Gain(1) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE VCE(sat) VBE(sat) 1.2 1.2 0.25 0.30 Vdc 40 250 Vdc

Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. fT Cobo hfe 60 20 8.0 MHz pF
2681
MPSL51
0.2
0.6
0.7
2682
MPSL51
0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = 55C to 135C
C, CAPACITANCE (pF)
VBB + 8.8 V
VCC 30 V
100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
0.3
10
20
1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20
td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50
10 0.2 0.3 0.5
2683
MOTOROLA
One Watt High Current Transistors

NPN Silicon
MPSW01 MPSW01A *
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPSW01 MPSW01A Collector Base Voltage MPSW01 MPSW01A Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Symbol VCEO 30 40 VCBO 40 50 5.0 1000 1.0 8.0 2.5 20 55 to +150 Vdc mAdc Watts mW/C Watts mW/C C Vdc Value Unit Vdc
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW01 MPSW01A IEBO V(BR)CEO MPSW01 MPSW01A V(BR)CBO MPSW01 MPSW01A V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
2684
MPSW01 MPSW01A
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) BaseEmitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 55 60 50 VCE(sat) VBE(on) 0.5 1.2 Vdc Vdc

Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cobo 50 20 MHz pF

1.0 VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25C 0.8
300 200 h FE , CURRENT GAIN
0.6 IC = 1000 mA IC = 10 mA IC = 50 mA IC = IC = 500 mA IC = 250 mA 100 mA
100 70 50 VCE = 1.0 V TJ = 25C
0.4
0.2 0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0
10 20
50 100
qVB , TEMPERATURE COEFFICIENT (mV/C)
1.0
0.8
1.2
0.6
1.6
qVB FOR VBE

2.0
0.4
0.2 0 1.0 2.0
2.4
5.0 10 20
50 100 200 500 1000
2685
MPSW01 MPSW01A
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 60 80 TJ = 25C
100 70 50 VCE = 10 V TJ = 25C f = 20 MHz 10 20 50 100 200 1000
40
Cibo
20 Cobo Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0
1k IC , COLLECTOR CURRENT (mA) 1.0 s 500 1.0 ms 100 ms
200 TA = 25C 100 50 TC = 25C DUTY CYCLE 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW01 MPSW01A 2.0 5.0 10 20 30 40
20 10 1.0
VCE, COLLECTOREMITTER VOLTAGE (V)
2686
MOTOROLA

NPN Silicon
MPSW05 MPSW06*
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW05 60 60 4.0 500 1.0 8.0 2.5 20 55 to +150 MPSW06 80 80 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW05 MPSW06 ICBO MPSW05 MPSW06 IEBO 0.1 0.1 0.1 Adc V(BR)CEO MPSW05 MPSW06 V(BR)EBO ICES 0.5 0.5 Adc 60 80 4.0 Vdc Adc Vdc
2687
MPSW05 MPSW06
DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) BaseEmitter Saturation Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) hFE 80 60 VCE(sat) VBE(sat) 0.4 1.2 Vdc Vdc

Current Gain Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cobo 50 12 MHz pF
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
2688
MPSW05 MPSW06
1.6 VB for VBE
20
2.0
2.4
2.8 0.5
1.0
2.0
200
500
4.0 0.1

100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 10 20 60 80 100 2.0 5.0 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2689
MOTOROLA
One Watt High Voltage Transistor

NPN Silicon
MPSW10
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 0.2 0.1 Vdc Vdc Vdc Adc Adc
2690
MPSW10
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) BaseEmitter On Voltage (IC = 30 mAdc, VCE = 10 Vdc) hFE 25 40 40 VCE(sat) VBE(on) 0.75 0.85 Vdc Vdc
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Ccb 45 3.0 MHz pF

200 VCE = 10 V hFE, DC CURRENT GAIN TJ = 125C
0.6 0.5 0.4 IC = 30 mA 0.3 0.2 0.1 0 0.1 IC = 10 mA IC = 20 mA TJ = 25C
100 70 50
25C
55C
30 20 1.0
2.0
50
70 100
0.2
0.5
2.0 5.0 1.0 10 IB, BASE CURRENT (mA)
20 30
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 55C to 125C RVB for VBE 55C to 25C RVC for VCE(sat) IC IB
+ 10
25C to 125C
2691
MPSW10
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz TJ = 25C Ceb
30 20
Ccb
0.5
1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS)
100
200
10 1.0
2.0 3.0
50
70 100
1k IC, COLLECTOR CURRENT (mA) 500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 ms 1.0 s 100 50 TA = 25C DUTY CYCLE 10% 10 20 50 100 200 300 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100 s
200
20 10
2692
MOTOROLA

NPN Silicon
COLLECTOR 3 BASE 2
MPSW13 MPSW14
EMITTER 1
1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
REV 1
2693
MPSW13 MPSW14
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSW13 MPSW14 MPSW13 MPSW14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
CurrentGain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| ftest. fT 125 MHz

CURRENT LIMIT DUTY CYCLE 10% THERMAL LIMIT SECOND BREAKDOWN LIMIT 100 ms 1.0 ms 1.0 k 1.0 s 500 TA = 25C 200 1.5 TC = 25C
3.0 k I C , COLLECTOR CURRENT (mA) 2.0 k
2.0
5.0
10
20
30
TJ = 125C h FE , DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 55C VCE = 5.0 V
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
200 k
3.0 TJ = 25C 2.5 IC = 10 mA IC = 50 mA IC = 250 mA IC = 500 mA
25C
2.0
1.5
1.0
3.0 k 2.0 k 5.0 7.0 10
20
30
50 70 100
200 300
500
0.5 0.1
0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
2694
MPSW13 MPSW14
TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.6
1.0
*APPLIES FOR IC/IB hFE/3.0
25C TO 125C
2.0
*qVC FOR VCE(sat)

55C TO 25C
3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
0.8
VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 500
0.6
6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
4.0 h FE , SMALLSIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25C f = 100 MHz C, CAPACITANCE (pF)
20 TJ = 25C 10 7.0 5.0 Cobo 3.0 2.0 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
2.0
1.0 0.8 0.6 0.4 0.2 0.5
Cibo
2695
MOTOROLA

NPN Silicon
MPSW42
MAXIMUM RATINGS

OFF CHARACTERISTICS
2696
MPSW42
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 40 VCE(sat) VBE(sat) 0.5 0.9 Vdc Vdc
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) fT Ccb 50 3.0 MHz pF
200 VCE = 10 V hFE, DC CURRENT GAIN TJ = 125C
0.6 0.5 0.4 IC = 30 mA 0.3 0.2 0.1 0 0.1 IC = 10 mA IC = 20 mA TJ = 25C
100 70 50
25C
55C
30 20 1.0
2.0
50
70 100
0.2
0.5
1.0 10 2.0 5.0 IB, BASE CURRENT (mA)
20 30
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 55C to 125C RVB for VBE 55C to 25C RVC for VCE(sat) IC IB
+ 10
25C to 125C
2697
MPSW42
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz TJ = 25C Ceb
30 20
Ccb
0.5
1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS)
100
200
10 1.0
2.0 3.0
50
70 100
1k IC, COLLECTOR CURRENT (mA) 500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 ms 1.0 s 100 50 TA = 25C DUTY CYCLE 10% 10 20 50 100 200 300 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100 s
200
20 10
2698
MOTOROLA

NPN Silicon
COLLECTOR 3 BASE 2
MPSW45 MPSW45A*
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW45 40 50 12 1.0 1.0 8.0 2.5 20 55 to +150 MPSW45A 50 60 12 1.0 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO 100 100 100 nAdc 50 60 12 Vdc nAdc 40 50 Vdc Vdc
2699
MPSW45 MPSW45A
DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 25,000 15,000 4,000 VCE(sat) VBE(sat) VBE(on) 150,000 1.5 2.0 2.0 Vdc Vdc Vdc

CurrentGain Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Ccb 100 6.0 MHz pF
RS
in en
IDEAL TRANSISTOR
2700
MPSW45 MPSW45A
(VCE = 5.0 Vdc, TA = 25C)
IC = 1.0 mA
200
100 70 50 30 20
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2701
MPSW45 MPSW45A
2.0
1.0 0.8 0.6 0.4
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
3.0 TJ = 25C 2.5 IC = 10 mA 2.0 50 mA 250 mA 500 mA
25C
1.5
55C VCE = 5.0 V
1.0
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.0
25C TO 125C
2.0
55C TO 25C 3.0 25C TO 125C 4.0
qVB FOR VBE

5.0 55C TO 25C
6.0 5.0 7.0 10
500
2702
MPSW45 MPSW45A
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
2703
MOTOROLA
One Watt High Current Transistors

PNP Silicon
MPSW51 MPSW51A*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range MPSW51 MPSW51A MPSW51 MPSW51A Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 40 40 50 5.0 1000 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc CASE 2905, STYLE 1 TO92 (TO226AE) Vdc mAdc Watts mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW51 MPSW51A IEBO V(BR)CEO MPSW51 MPSW51A V(BR)CBO MPSW51 MPSW51A V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
2704
MPSW51 MPSW51A
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 55 60 50 VCE(sat) VBE(on) 0.7 1.2 Vdc Vdc

CurrentGain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT Cobo 50 30 MHz pF
200 VCE , COLLECTOR VOLTAGE (VOLTS)
1.0 IC = 10 mA IC = 50 mA IC = IC = IC = IC = 100 250 500 mA 1000 mA mA mA
0.8
h FE , CURRENT GAIN
100 70 50 VCE = 1.0 V TJ = 25C
0.6
0.4
0.2 TJ = 25C 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
20 10
20
50
100
200
500
1000
50 100
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(SAT) @ IC/IB = 10
qV B, TEMPERATURE COEFFICIENT (mV/ C)
0.8
1.2
0.6
1.6
qVB for VBE

2.0
0.4
0.2
VCE(SAT) @ IC/IB = 10 5.0 10 20 50 100 200 500 1000
2.4
0 1.0 2.0
2.8 1.0 2.0
5.0
10
20
50 100 200
500 1000
2705
MPSW51 MPSW51A
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 120 160 TJ = 25C
100 70 50
VCE = 10 V TJ = 25C f = 20 MHz
80 Cibo 40 Cobo
30 10
0 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
1.0 k 1.0 ms I C , COLLECTOR CURRENT (mA) 500 TA = 25C TC = 25C 1.0 ms
100 ms
200 100 50
DUTY CYCLE 10% MPSW51 MPSW51A CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 30 40
20 10 1.0
2706
MOTOROLA

PNP Silicon
MPSW55 MPSW56*
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW55 60 60 4.0 500 1.0 8.0 2.5 20 55 to +150 MPSW56 80 80 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO 0.1 0.1 0.1 Adc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES 0.5 0.5 Adc 60 80 4.0 Vdc Adc Vdc
2707
MPSW55 MPSW56
DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) hFE 100 50 VCE(sat) VBE(on) 0.5 1.2 Vdc Vdc

Current Gain Bandwidth Product (IC = 250 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cobo 50 15 MHz pF
400 TJ = 125C hFE, DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7
VCE = 1.0 V
1.0
2.0
3.0
5.0
50
70
100
200
300
500
0.6 IC = 10 mA 0.4
50 mA
100 mA
250 mA
500 mA
0.4
0.2
0 0.05 0.1
0.2
10
20
50
0 0.5 1.0
2.0
500
2708
MPSW55 MPSW56
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25C
1.6 VB for VBE
2.0
2.4
10 7.0
Cobo
2.8 0.5
1.0
2.0
500
5.0 0.1
0.2
50 100

200 IC, COLLECTOR CURRENT (mA) VCE = 2.0 V TJ = 25C 100 70 50 DUTY CYCLE 10% 2 k 1 k 500 200 100 50 20 20 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C dc dc 1.0 s 1.0 ms 100 s
30
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 2.0 5.0 10 20 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2709
MOTOROLA

PNP Silicon
COLLECTOR 3
MPSW63 MPSW64 *
BASE 2
EMITTER 1
1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 30 30 10 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
2710
MPSW63 MPSW64
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSW63 MPSW64 MPSW63 MPSW64 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
CurrentGain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| ftest. fT 125 MHz

200 h FE, DC CURRENT GAIN (X1.0 k) TJ = 125C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3
25C VCE = 2.0 V 5.0 V 55C
10 V
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 100 VBE(on) @ VCE = 5.0 V VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4 0 0.3 0.5 1.0 2.0 TJ = 25C 1.8 1.6 50 mA 100 mA 175 mA 1.4 1.2 1.0 0.8 0.6 0.1 0.3 300 mA
1.2
0.8
IC = 10 mA 1.0 3.0 10 30 100 300 1 k 3 k 10 k
3.0 5.0
10
30 50 100
300
2711
MPSW63 MPSW64
R qV , TEMPERATURE COEFFICIENT (mV/ C) +5.0 +4.0 +3.0 +2.0 +1.0 0 1.0 2.0 3.0 4.0 RqVB FOR VBE 5.0 0.3 0.5 1.0 2.0 *RqVC FOR VCE(sat) 50C TO +25C +25C TO +125C 5.0 10 20 50 100 300 +25C TO +125C 50C TO +25C *APPLIES FOR IC/IB hFE/100 f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 600 400 300 200 TJ = 25C VCE = 20 V
100 60 40 30 20 0.3 0.5 1.0 2.0 5.0 10 20 50 100 300 10 V 5.0 V
20 15 C, CAPACITANCE (pF) 10 7.0 5.0
Cobo IC , COLLECTOR CURRENT (mA)
2 k
Cibo
1 k
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 mS
100 ms
500 1.0 s TA = 25C 200 DUTY CYCLE 10% 100 1.5 2.0 TC = 25C
TJ = 25C f = 1.0 MHz
3.0 2.0 0.1 0.2
0.5
1.0
2.0
5.0
10
20 30
5.0
10
20
30
2712
MOTOROLA

PNP Silicon
MPSW92
MAXIMUM RATINGS

OFF CHARACTERISTICS
2713
MPSW92
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) 0.5 0.9 Vdc Vdc
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Ccb 50 6.0 MHz pF

VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 IC = 10 mA 0.2 0.1 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 30 IC = 20 mA TJ = 25C IC = 30 mA
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125C
100 70 50
25C 55C
30 20 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2714
MPSW92
R qV, TEMPERATURE COEFFICIENTS (mV/ C) 1.4 1.2 TJ = 25C V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 5.0 VCE(sat) @ IC/IB = 5.0 20 30 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 RqVB FOR VBE 55C TO 125C RqVC FOR VCE(sat) 55C TO 25C IC/IB = 10 25C TO 125C
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
Ceb
TJ = 25C
30 20
Ccb
5.0 10
20
50 100 200
10 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1 k IC , COLLECTOR CURRENT (mA) 500 100 ms 200 1.0 s 100 1.0 ms 50 TA = 25C TC = 25C MPSW92 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
20 10 10
DUTY CYCLE 10% 20 50 100 200 300
2715
MOTOROLA
PNP RF Amplifier Transistor Surface Mount
MSA1022-CT1
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc CASE 318D03, STYLE 1 SC59

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol VCBO VCEO VEBO IC Value 30 20 5.0 30
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C

Characteristic Collector Cutoff Current (VCB = 10 Vdc, IE = 0) CollectorEmitter Breakdown Voltage (VCE = 20 Vdc, IB = 0) EmitterBase Breakdown Voltage (VEB = 5.0 Vdc, IC = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 1.0 mAdc) CurrentGain Bandwidth Product (VCB = 10 Vdc, IE = 1.0 mAdc) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol ICBO ICEO IEBO hFE fT Min 110 150 Max 0.1 100 10 220 Unit Adc Adc Adc MHz
DEVICE MARKING
Marking Symbol
ECX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
(Replaces MSA1022BT1/D)
2716
MOTOROLA
PNP General Purpose Amplifier Transistor Surface Mount
MSB709-RT1
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc CASE 318D03, STYLE 1 SC59

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 45 7.0 100 200

Characteristic CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IE = 0) CollectorBase Cutoff Current (VCB = 45 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min 45 60 7.0 210 Max 0.1 100 340 0.5 Unit Vdc Vdc Vdc Adc nAdc Vdc
DEVICE MARKING
Marking Symbol
ARX
REV 3
2717
MOTOROLA
PNP General Purpose Amplifier Transistor Surface Mount
MSB710-RT1
COLLECTOR 3
2 BASE
1 EMITTER
2 1
CASE 318D04, STYLE 1 SC59

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 500 1.0 Unit Vdc Vdc Vdc mAdc Adc
DEVICE MARKING
CRX
replaces MSB710QT1/D
2718
MSB710-RT1
Characteristic CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 20 Vdc, IE = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 150 mAdc) (VCE = 10 Vdc, IC = 500 mAdc) CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) CollectorBase Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO Min 50 60 7.0 Max 0.1 Unit Vdc Vdc Vdc Adc hFE1 hFE2 VCE(sat) VBE(sat) Cob 120 40 240 0.6 1.5 15 Vdc Vdc pF
2719
MOTOROLA
PNP Silicon General Purpose Amplifier Transistor

This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC70/SOT323 package which is designed for low power surface mount applications. High hFE, 210 460 Low VCE(sat), < 0.5 V Available in 8 mm, 7inch/3000 Unit Tape and Reel
MSB1218A-RT1
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
1 2

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 45 45 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc
CASE 41902, STYLE 3 SC70/SOT323
COLLECTOR 3
DEVICE MARKING
MSB1218ART1 = BR 1 BASE Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C 2 EMITTER
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range
Characteristic CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IE = 0) CollectorBase Cutoff Current (VCB = 20 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) CollectorEmitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min 45 45 7.0 210 Max 0.1 100 340 0.5 Unit Vdc Vdc Vdc A A Vdc
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 2
2720
MSB1218A-RT1
250 PD , POWER DISSIPATION (MILLIWATTS) TA = 25C IC, COLLECTOR CURRENT (mA) 200 120
150
90
100 RJA = 833C/W
60
300 A 250 200 150 100 IB = 50 A 0 3 6 9 12 15
50
30 0
0 50
50
100
150
VCE, COLLECTOR VOLTAGE (V)
Figure 2. IC VCE
1000 VCE = 10 V TA = 75C DC CURRENT GAIN TA = 25C 100 TA = 25C VCE , COLLECTOR-EMITTER VOLTAGE (V)
2 TA = 25C 1.5
0.5
10 0.1
10
100
0 0.01
0.1
1 IB, BASE CURRENT (mA)
10
100
900 800 COLLECTOR VOLTAGE (mV) 700 600 500 400 300 200 100 0 0.2 0.5 1 5 10 20 40 60 80 100 150 200 TA = 25C VCE = 5 V
2721
MSB1218A-RT1
13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10 20 VCB (V) 30 40
2722
MOTOROLA
NPN RF Amplifier Transistors Surface Mount
COLLECTOR 3
MSC2295-BT1 MSC2295-CT1
2 BASE
2 1

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 20 5.0 30

Characteristic CollectorBase Cutoff Current (VCB = 10 Vdc, IE = 0) DC Current Gain(1) (VCB = 10 Vdc, IC = 1.0 mAdc) CollectorGain Bandwidth Product (VCB = 10 Vdc, IE = 1.0 mAdc) Reverse Transistor Capacitance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 10.7 MHz) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. MSC2295BT1 MSC2295CT1 fT Cre Symbol ICBO hFE 70 110 150 140 220 1.5 MHz pF Min Max 0.1 Unit Adc
DEVICE MARKING Marking Symbol
VBX
MSC2295BT1
VCX
MSC2295CT1
2723
MOTOROLA
NPN RF Amplifier Transistor Surface Mount
MSC3130T1
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc CASE 318D03, STYLE 1 SC59

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol VCBO VCEO VEBO IC Value 15 10 3.0 50

Characteristic Collector Cutoff Current (VCB = 10 Vdc, IE = 0) CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) DC Current Gain(1) (VCE = 4.0 Vdc, IC = 5.0 mAdc) CollectorEmitter Saturation Voltage (IC = 20 mAdc, IB = 4.0 mAdc) CurrentGain Bandwidth Product (VCB = 4.0 Vdc, IE = 5.0 mAdc) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol ICBO VCEO VEBO hFE VCE(sat) fT Min 10 3.0 75 1.4 Max 1.0 400 0.5 2.5 Unit Adc Vdc Vdc Vdc GHz
DEVICE MARKING
Marking Symbol
1SX
2724
MOTOROLA
NPN General Purpose Amplifier Transistors Surface Mount
COLLECTOR 3
MSD601-RT1* MSD601-ST1

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc
3 2 1

Characteristic CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 45 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. MSD601RT1 MSD601ST1 Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 210 290 90 Max 0.1 100 340 460 0.5 Vdc Unit Vdc Vdc Vdc Adc nAdc
DEVICE MARKING Marking Symbol
YRX
MSD601RT1
YSX
MSD601ST1
REV 2
2725
MOTOROLA
NPN General Purpose Amplifier Transistor Surface Mount
MSD602-RT1
COLLECTOR 3
3 2

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 500 1.0
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc Adc

Characteristic CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 20 Vdc, IE = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 150 mAdc) (VCE = 10 Vdc, IC = 500 mAdc) CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE1 hFE2 VCE(sat) Cob Min 50 60 7.0 120 40 Max 0.1 240 0.6 15 Vdc pF Unit Vdc Vdc Vdc Adc
DEVICE MARKING
Marking Symbol
WRX
REV 1
2726
MOTOROLA
NPN Low Voltage Output Amplifier Surface Mount
MSD1328-RT1
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc CASE 318D03, STYLE 1 SC59

Rating CollectorBase Voltage CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 25 20 12 500 1000

Characteristic CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IE = 0) CollectorBase Cutoff Current (VCB = 25 Vdc, IE = 0) DC Current Gain(1) (VCE = 2.0 Vdc, IC = 500 mAdc) CollectorEmitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc) BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) VBE(sat) Min 20 25 12 200 Max 0.1 350 0.4 1.2 Unit Vdc Vdc Vdc Adc Vdc Vdc
DEVICE MARKING
Marking Symbol
1DRX
2727
MOTOROLA
NPN Silicon General Purpose Amplifier Transistor

This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. High hFE, 210 460 Low VCE(sat), < 0.5 V Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MSD1819A-RT1
NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC IC(P) Value 60 50 7.0 100 200 Unit Vdc Vdc Vdc mAdc mAdc
1 2
DEVICE MARKING
MSD1819A-RT1 = ZR
COLLECTOR 3
Characteristic Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0) Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector-Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 210 90 Max 0.1 100 340 0.5 Vdc Unit Vdc Vdc Vdc A A
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 2
2728
MSD1819A-RT1
PD , POWER DISSIPATION (MILLIWATTS) 250 IC, COLLECTOR CURRENT (mA) 60 TA = 25C 200 50 40 30 20 10 0 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 8
150
100 RJA = 833C/W
50
0 50
150
Figure 2. IC VCE
1000 TA = 25C TA = 75C DC CURRENT GAIN VCE = 10 V VCE , COLLECTOR-EMITTER VOLTAGE (V)
2 TA = 25C 1.5
TA = 25C 100
0.5
10 0.1
0 0.01
0.1
1 IB, BASE CURRENT (mA)
10
100
900 800 COLLECTOR VOLTAGE (mV) 700 600 500 400 300 200 100 0 0.2 0.5 1 5 10 20 40 60 80 100 150 200 TA = 25C VCE = 5 V
2729
MSD1819A-RT1
20 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 1
Cib, INPUT CAPACITANCE (pF)
18
16
14
12
10
2 VEB (V)
10
20 VCB (V)
30
40
2730
MOTOROLA
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC59 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count
R1 PIN3 COLLECTOR (OUTPUT)
MUN2111T1 SERIES
The SC59 package can be soldered using wave or reflow. PIN2 The modified gullwinged leads absorb thermal stress duringBASE R2 soldering eliminating the possibility of damage to the die. (INPUT) Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
PIN1 EMITTER (GROUND)
3 2 1
CASE 318D03, STYLE 1 (SC59)

Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/C
Thermal Resistance JunctiontoAmbient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 625 65 to +150 260 10 C/W C C Sec

Device MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1(2) MUN2116T1(2) MUN2130T1(2) MUN2131T1(2) MUN2132T1(2) MUN2133T1(2) MUN2134T1(2) Marking 6A 6B 6C 6D 6E 6F 6G 6H 6J 6K 6L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
REV 5
2731
MUN2111T1 SERIES
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 VOL MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
VCE(sat)
(IC = 10 mA, IB = 5.0 mA) (IC = 10 mA, IB = 1.0 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2732
MUN2111T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25C unless otherwise noted)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 Input Resistor MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2111T1/MUN2112T1/MUN2113T1 MUN2114T1 MUN2115T1/MUN2116T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
250 PD , POWER DISSIPATION (MILLIWATTS)
200
150
100 RJA = 625C/W
50
0 50
150
2733
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2111T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 75C 0.1 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
25C
TA = 75C 25C 100 25C
10
100
4 f = 1 MHz lE = 0 V TA = 25C
100 75C IC, COLLECTOR CURRENT (mA) 10
25C TA = 25C
0.1
0.01 0.001 0 1 2
VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
50
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS)
10
TA = 25C 25C 75C
0.1
10
40
50
2734
MUN2111T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = 25C 25C 1 75C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
TA = 75C 25C 100 25C
0.1
0.01
10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 100
4 f = 1 MHz lE = 0 V TA = 25C
100 75C IC, COLLECTOR CURRENT (mA) 10 25C TA = 25C
0.1
50
0.001
TA = 25C 10 75C
25C
0.1
10
20
30
40
50
2735
MUN2111T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10
1000
TA = 75C 25C 25C 100
TA = 25C 75C 0.1
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = 25C 10 25C 75C
0.1
10
50
2736
MUN2111T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C 25C
10
+12 V
LOAD 0.1
10
50
2737
MOTOROLA
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC59 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC59 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
R1 PIN2 R2 BASE (INPUT) PIN1 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT)
MUN2211T1 SERIES
NPN SILICON BIAS RESISTOR TRANSISTOR
3 2 1
CASE 318D03, STYLE 1 (SC59)

Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD Value 50 50 100 *200 1.6 Unit Vdc Vdc mAdc mW mW/C

REV 4
2738
MUN2211T1 SERIES
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO
Vdc Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 350 350 5.0 15 30 200 150 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
2739
MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25C unless otherwise noted)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2215T1 MUN2216T1 MUN2233T1 Input Resistor MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2211T1/MUN2212T1/MUN2213T1 MUN2214T1 MUN2215T1/MUN2216T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
100 RJA = 625C/W 50
0 50
150
2740
MUN2211T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
0.1
0.01
0.001
80
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = 25C 25C 75C
0.1
10
40
50
2741
MUN2211T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1 IC/IB = 10 TA = 25C 25C 75C hFE, DC CURRENT GAIN (NORMALIZED)
1000 VCE = 10 V TA = 75C 25C 25C 100
0.1
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
10
20
30
40
50
0.001
10
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.1
10
40
50
2742
MUN2211T1 SERIES
10 IC/IB = 10
hFE, DC CURRENT GAIN (NORMALIZED)
TA = 25C 25C
1000 VCE = 10 V TA = 75C 25C 25C 100
75C
0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10
50
0.001
0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50
2743
MUN2211T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
100 75C IC, COLLECTOR CURRENT (mA) 25C
TA = 25C 10
10 VO= 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = 25C
25C 75C 1
0.1
10
40
50
2744
MUN2211T1 SERIES
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2745
MOTOROLA
Dual Bias Resistor Transistors

PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT363 package which is ideal for lowpower surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5111DW1T1 SERIES
5 4
(3)
(2) R1 R2
(1)
Q1 Q2 R2 (4) (5) R1 (6)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
Thermal Resistance JunctiontoAmbient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) RJA TJ, Tstg PD 833 65 to +150 *150 C/W C mW
DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES

Device MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1(2) MUN5116DW1T1(2) MUN5130DW1T1(2) MUN5131DW1T1(2) MUN5132DW1T1(2) MUN5133DW1T1(2) MUN5134DW1T1(2) MUN5135DW1T1(2) Marking 0A 0B 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
REV 2
2746
MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
V(BR)CBO V(BR)CEO
Vdc Vdc
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130DW1T1/MUN5131DW1T1 (IC = 10 mA, IB = 1 mA) MUN5115DW1T1/MUN5116DW1T1/ MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN5113DW1T1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
2747
MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5132DW1T1 Input Resistor MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1/MUN5116DW1T1 MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1
R1/R2
200
150
100 RJA = 833C/W
50
0 50
150
2748
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5111DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
TA = 25C 0.1 25C 75C
TA = 75C 25C 100 25C
0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
TA = 25C 25C 75C
0.1
10
40
50
2749
MUN5111DW1T1 SERIES
1 TA = 25C
25C
TA = 75C 25C 100 25C
75C 0.1
0.01
10 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 10 IC, COLLECTOR CURRENT (mA) 100
4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C
100 75C 10 25C TA = 25C
0.1
0.01 0.001 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8
VO = 5 V 9 10
50
TA = 25C 10 75C 25C
0.1
10
40
50
2750
MUN5111DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10
1000 hFE , DC CURRENT GAIN (NORMALIZED)
TA = 75C 25C 100 25C
TA = 25C 75C 0.1
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
40
50
2751
MUN5111DW1T1 SERIES
1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) TA = 25C 25C 0.1 75C
180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C
25C 10
10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25C TA = 25C 75C 1
0.1
10
40
50
2752
MUN5111DW1T1 SERIES
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C
VCE = 10 V
VCE = 5.0 V
100 1.0 10 IC, COLLECTOR CURRENT (mA) 100

VCE = 10 V
VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100
2753
MOTOROLA
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC70/SOT323 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC70/SOT323 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD
MUN5111T1 SERIES
1 2
Value 50 50 100 *150 1.2

REV 2
2754
MUN5111T1 SERIES
OFF CHARACTERISTICS
V(BR)CBO V(BR)CEO
Vdc Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5113T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
2755
MUN5111T1 SERIES
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5111T1/MUN5112T1/MUN5113T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
100 RJA = 833C/W
50
0 50
150
2756
MUN5111T1 SERIES
TA = 25C 0.1 25C 75C
TA = 75C 25C 100 25C
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
TA = 25C 25C 75C
0.1
10
40
50
2757
MUN5111T1 SERIES
1 TA = 25C
25C
TA = 75C 25C 100 25C
75C 0.1
0.01
100 75C 10 25C TA = 25C
0.1
VO = 5 V 9 10
50
TA = 25C 10 75C 25C
0.1
10
40
50
2758
MUN5111T1 SERIES
TA = 75C 25C 100 25C
TA = 25C 75C 0.1
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
40
50
2759
MUN5111T1 SERIES
0.01
0.001
80
25C 10
+12 V
LOAD 0.1
10
40
50
2760
MOTOROLA

NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5211DW1T1 SERIES
5 4
(3)
(2) R1 R2
(1)
Q1 Q2 R2 (4) (5) R1 (6)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC RJA TJ, Tstg PD Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 Value 50 50 100 Unit Vdc Vdc mAdc C/W C mW
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) 833 65 to +150 *150

Device MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1(2) MUN5216DW1T1(2) MUN5230DW1T1(2) MUN5231DW1T1(2) MUN5232DW1T1(2) MUN5233DW1T1(2) MUN5234DW1T1(2) MUN5235DW1T1(2) R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
REV 2
2761
MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
V(BR)CBO V(BR)CEO
Vdc Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1 (IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211lDW1T1 MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5213DW1T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
2762
MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5230DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 Input Resistor MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
R1/R2
200
150
100 RJA = 833C/W
50
0 50
150
2763
MUN5211DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
0.01
0.001
50
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
50
2764
MUN5211DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 25C 0.1 TA = 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 25C 100
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
50
0.001
4 6 Vin, INPUT VOLTAGE (VOLTS)
10
0.1
10
20
30
40
50
2765
MUN5211DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
1 25C 75C
TA = 25C 0.1
0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA)
2766
MUN5211DW1T1 SERIES
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
90 100
25C 10
0.1
10
50
2767
MUN5211DW1T1 SERIES
VCE = 10 V
VCE = 5.0 V

VCE = 10 V
VCE = 5.0 V
2768
MOTOROLA
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD
MUN5211T1 SERIES
NPN SILICON BIAS RESISTOR TRANSISTORS
1 2
CASE 419-02, STYLE 3 SC-70/SOT-323
Value 50 50 100 *150 1.2
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 833 65 to +150 260 10 C/W C C Sec

REV 2
2769
MUN5211T1 SERIES
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
V(BR)CBO V(BR)CEO
Vdc Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230T1/MUN5231T1 (IC = 10 mA, IB = 1 mA) MUN5215T1/MUN5216T1 MUN5232T1/MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5213T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
2770
MUN5211T1 SERIES
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5211T1/MUN5212T1/MUN5213T1 MUN5214T1 MUN5215T1/MUN5216T1 MUN5230T1/MUN5231T1/MUN5232T1 MUN5233T1 MUN5234T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
100 RJA = 833C/W
50
0 50
150
2771
MUN5211T1 SERIES
0.01
0.001
50
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
50
2772
MUN5211T1 SERIES
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
50
0.001
10
0.1
10
20
30
40
50
2773
MUN5211T1 SERIES
1 25C 75C
TA = 25C 0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
2774
MUN5211T1 SERIES
0.01
0.001
80
90 100
25C 10
0.1
10
50
2775
MUN5211T1 SERIES
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2776
MOTOROLA
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1 SERIES
5 4
(3) R1 Q1
(2) R2
(1)
Q2 R2 (4) (5) R1 (6)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC RJA TJ, Tstg PD Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 Value 50 50 100 Unit Vdc Vdc mAdc C/W C mW
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) 833 65 to +150 *150

Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1(2) MUN5316DW1T1(2) MUN5330DW1T1(2) MUN5331DW1T1(2) MUN5332DW1T1(2) MUN5333DW1T1(2) MUN5334DW1T1(2) MUN5335DW1T1(2) R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
REV 4
2777
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
V(BR)CBO V(BR)CEO
Vdc Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5311lDW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k)
2778
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
(Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5330DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 Input Resistor MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
R1/R2
200
150
100 RJA = 833C/W
50
0 50
150
2779
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 NPN TRANSISTOR
0.01
0.001
50
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
50
2780
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 PNP TRANSISTOR
TA = 25C 0.1 25C 75C
TA = 75C 25C 100 25C
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
TA = 25C 25C 75C
0.1
10
40
50
2781
MUN5311DW1T1 SERIES
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
50
0.001
10
0.1
10
20
30
40
50
2782
MUN5311DW1T1 SERIES
1 TA = 25C
25C
TA = 75C 25C 100 25C
75C 0.1
0.01
100 75C 10 25C TA = 25C
0.1
VO = 5 V 9 10
50
TA = 25C 10 75C 25C
0.1
10
40
50
2783
MUN5311DW1T1 SERIES
1 25C 75C
TA = 25C 0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
2784
MUN5311DW1T1 SERIES
TA = 75C 25C 100 25C
TA = 25C 75C 0.1
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
40
50
2785
MUN5311DW1T1 SERIES
0.01
0.001
80
90 100
25C 10
0.1
10
50
2786
MUN5311DW1T1 SERIES
0.01
0.001
80
25C 10
0.1
10
40
50
2787
MUN5311DW1T1 SERIES
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C
VCE = 10 V
VCE = 10 V
VCE = 5.0 V
VCE = 5.0 V
Figure 42. DC Current Gain PNP
Figure 43. DC Current Gain NPN

1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C
VCE = 10 V
VCE = 10 V
VCE = 5.0 V
VCE = 5.0 V
Figure 44. DC Current Gain PNP
Figure 45. DC Current Gain NPN
2788
MOTOROLA
NPN Silicon
P2N2222A
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO ICEO IBEX 0.01 10 10 10 20 nAdc nAdc nAdc 40 75 6.0 10 Vdc Vdc Vdc nAdc Adc
2789
P2N2222A
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) VBE(sat) 0.6 1.2 2.0 0.3 1.0 Vdc 300 Vdc

Current Gain Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) fT Cobo Cibo hie 2.0 0.25 hre hfe 50 75 hoe 5.0 25 rbCc NF 35 200 150 4.0 ps dB 300 375 8.0 4.0 8.0 1.25 X 10 4 300 8.0 25 MHz pF pF k
mmhos
Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE(off) = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Fi Ad ) (Figure 2) td tr ts tf 10 25 225 60 ns ns ns ns
2790
P2N2222A
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 4 V CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
1000 700 500 hFE , DC CURRENT GAIN 300 200
TJ = 125C
25C 100 70 50 30 20 10 0.1 55C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k
1.0 TJ = 25C 0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
2.0
3.0
5.0
10
20
30
50
2791
P2N2222A
t, TIME (ns)
tf
6.0
6.0
4.0
4.0
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0 50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)

500 VCE = 20 V TJ = 25C
300 200
100 70 50 1.0
0.2 0.3
20 30
50
2.0
50
70 100
2792
P2N2222A
0.2
2793
MOTOROLA
PNP Silicon
P2N2907A
MAXIMUM RATINGS
1 2 3

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO ICEO IBEX 0.01 10 10 10 50 nAdc nAdc nAdc 60 60 5.0 50 Vdc Vdc Vdc nAdc Adc

2794
P2N2907A
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 300 Vdc

Current Gain Bandwidth Product(1), (2) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 8.0 30 MHz pF pF
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time (VCC = 6.0 Vd IC = 150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = 15 mAdc) (Figure 2) 15 (VCC = 30 Vdc, IC = 150 mAdc, 30 Vd 150 Ad IB1 = 15 mAdc) (Figures 1 and 5) 15 ton td tr toff ts tf 50 10 40 110 80 30 ns ns ns ns ns ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 30 V 200 ns
30 V 200
+15 V
1.0 k 1.0 k 50
1N916
2795
P2N2907A
0.2 0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.8 IC = 1.0 mA 0.6 10 mA 100 mA 500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03 0.05 0.07 0.1
0.2
2.0
3.0
5.0 7.0 10
20 30
50
t, TIME (ns)
2796
P2N2907A
6.0
6.0
4.0
4.0
IC = 50 A 100 A 500 A 1.0 mA
2.0
2.0
0 0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
50
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)

400 300 200
10 7.0 5.0 3.0 2.0 0.1 Ccb
100 80 60 40 30 20 1.0 2.0
VCE = 20 V TJ = 25C
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
5.0
10
20
50
100 200
500 1000
0.6
0.4
0.2
0 0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
5.0 10 20
50 100 200 500
2797
MOTOROLA
NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications. High Current: 2.0 Amp The SOT223 package can be soldered using wave or reflow. SOT223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use PZT651T1 to order the 7 inch/1000 unit reel Use PZT651T3 to order the 13 inch/4000 unit reel PNP Complement is PZT751T1
COLLECTOR 2,4
PZT651T1
SOT223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT
2 3
BASE 1 EMITTER 3
CASE 318E04, STYLE 1 TO261AA

Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 65 to 150 150 Unit Vdc Vdc Vdc Adc Watts mW/C C C
DEVICE MARKING
651
Characteristic Thermal Resistance from JunctiontoAmbient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 156 260 10 Unit C/W C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum recommended footprint.
REV 1
2798
PZT651T1
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) BaseEmitter Cutoff Current (VEB = 4.0 Vdc) CollectorBase Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 0.1 100 Vdc Vdc Vdc Adc nAdc
DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) CollectorEmitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) BaseEmitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) BaseEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) CurrentGain Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% hFE 75 75 75 40 VCE(sat) VBE(on) VBE(sat) fT 75 0.5 0.3 1.0 1.2 Vdc Vdc MHz Vdc
2799
MOTOROLA
PNP Silicon Planar Epitaxial Transistor

This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications. High Current: 2.0 Amp The SOT223 Package can be soldered using wave or reflow. SOT223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use PZT751T1 to order the 7 inch/1000 unit reel. Use PZT751T3 to order the 13 inch/4000 unit reel. NPN Complement is PZT651T1
COLLECTOR 2, 4
PZT751T1
SOT223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT
BASE 1
2 3
CASE 318E-04, STYLE 1 TO-261AA EMITTER 3

Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 65 to 150 150 Unit Vdc Vdc Vdc Adc Watts mW/C C C
DEVICE MARKING
ZT751
Thermal Resistance from JunctiontoAmbient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 156 260 10 C/W C Sec
REV 1
2800
PZT751T1
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) BaseEmitter Cutoff Current (VEB = 4.0 Vdc) CollectorBase Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 0.1 100 Vdc Vdc Vdc Adc nAdc
DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) CollectorEmitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) BaseEmitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) BaseEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) CurrentGainBandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. hFE 75 75 75 40 VCE(sat) VBE(on) VBE(sat) fT 75 0.5 0.3 1.0 1.2 Vdc Vdc MHz Vdc
2801
MOTOROLA
NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. PNP Complement is PZT2907AT1 The SOT-223 package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm tape and reel Use PZT2222AT1 to order the 7 inch/1000 unit reel. Use PZT2222AT3 to order the 13 inch/4000 unit reel.
PZT2222AT1
SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT
COLLECTOR 2, 4
BASE 1 3 EMITTER
2 3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (Open Collector) Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 40 75 6.0 600 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
Thermal Resistance from Junction to Ambient Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
DEVICE MARKING
P1F

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc) Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc) Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
V(BR)CEO V(BR)CBO V(BR)EBO IBEX ICEX IEBO
40 75 6.0
20 10 100
Vdc Vdc Vdc nAdc nAdc nAdc
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2
2802
PZT2222AT1
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted)
OFF CHARACTERISTICS (continued)

Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 125C) ICBO 10 10 nAdc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 Adc, f = 1.0 kHz) hFE 35 50 70 35 100 50 40 VCE(sat) VBE(sat) 0.6 hie 2.0 0.25 hre hfe 50 75 hoe 5.0 25 F 35 200 4.0 dB 300 375 mhos 8.0 1.25 8.0x10-4 4.0x10-4 1.2 2.0 k 0.3 1.0 Vdc 300 Vdc
Current-Gain Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cc Ce 300 8.0 25 MHz pF pF
SWITCHING TIMES (TA = 25C)

Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, IC = 150 mAdc, IB( ) = 15 mAdc VEB( ff) = 0 5 Vdc) mAdc, EB(off) 0.5 B(on) Figure 1 (VCC = 30 Vdc, IC = 150 mAdc, IB( ) = IB( ff) = 15 mAdc) B(on) B(off) Figure 2 td tr ts tf 10 25 225 60 ns ns
2803
PZT2222AT1
Vi 90% R1 0 tr tp 10% Vi R2 Vo D.U.T. VCC
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 . PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR tp tr = 200 ns 2 ns 0.02 OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME Zi Ci tr > 100 k < 12 pF < 5 ns
Vi +16.2 V
VCC R2 D.U.T. R3 Vo OSCILLOSCOPE R4 tf 100 s VBB
R1 0 TIME Vi D1 13.8 V
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
2804
MOTOROLA

This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. NPN Complement is PZT2222AT1 The SOT-223 package can be soldered using wave or reflow SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. COLLECTOR Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel.
2,4
PZT2907AT1
SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT
4 1 2 3
BASE 1
3 EMITTER

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 60 60 5.0 600 1.5 12 65 to 150 Unit Vdc Vdc Vdc mAdc Watts mW/C C
Thermal Resistance Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
DEVICE MARKING
P2F

OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 50 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = 30 Vdc, VBE = 0.5 Vdc) Base-Emitter Cutoff Current (VCE = 30 Vdc, VBE = 0.5 Vdc) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBEX 60 60 5.0 10 50 50 Vdc Vdc Vdc nAdc nAdc nAdc
REV 4
2805
PZT2907AT1
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 300 Vdc
Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cc Ce 200 8.0 30 MHz pF pF
SWITCHING TIMES
Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. (VCC = 6.0 Vdc, IC = 150 mAdc, 6 0 Vd 150 Ad IB1 = IB2 = 15 mAdc) 15 (VCC = 30 Vdc, IC = 150 mAdc, Vd 150 Ad IB1 = 15 mAdc) 15 ton td tr toff ts tf 45 10 40 100 80 30 ns ns
30 V INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 16 V 200 ns 50 INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 30 V 50 200 ns
+15 V
6.0 V
200
1.0 k
37
1.0 k
1.0 k
1N916
2806
PZT2907AT1
1000 TJ = 125C hFE, CURRENT GAIN TJ = 25C 100 TJ = 55C
f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
1000
100
VCE = 20 V TJ = 25C 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000
10 0.1
1000
1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 CAPACITANCE (pF)
30 20 Ceb 10 7.0 5.0 Ccb
0.6
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500
3.0 2.0 0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 REVERSE VOLTAGE (VOLTS)
2807
MOTOROLA
NPN Small Signal Darlington Transistor

This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. High fT : 125 MHz Minimum The SOT-223 Package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use PZTA14T1 to order the 7 inch/1000 unit reel Use PZTA14T3 to order the 13 inch/4000 unit reel The PNP Complement is PZTA64T1
COLLECTOR 2, 4
PZTA14T1
SOT223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
4 1
BASE 1
2 3
EMITTER 3

Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Symbol VCES VCEO VEBO IC PD TJ, Tstg Value 30 30 10 300 1.5 65 to 150 Unit Vdc Vdc Vdc mAdc Watts C
DEVICE MARKING
P1N
Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
REV 1
2808
PZTA14T1
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CBO V(BR)CES V(BR)EBO ICBO IEBO 30 30 10 0.1 0.1 Vdc Vdc Vdc Adc Adc
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 VCE(sat) VBE(on) 1.5 2.0 Vdc Vdc
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT 125 MHz
2809
PZTA14T1
200 k 100 k hFE, DC CURRENT GAIN 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 55C TJ = 125C |h FE|, SMALL-SIGNAL CURRENT GAIN
4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
25C
1.0 0.8 0.6 0.4
VCE = 5.0 V 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500
3.0 k 2.0 k 5.0 7.0
10
0.2 0.5
1.0
2.0
200
500
1.6
TJ = 25C
20 TJ = 25C
1.4 V, VOLTAGE (VOLTS) C, CAPACITANCE (pF) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 10 7.0 5.0 Cibo Cobo
0.8
VCE(sat) @ IC/IB = 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
3.0 2.0 0.04
0.6 5.0 7.0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
RV, TEMPERATURE COEFFICIENT (mV/C)
3.0 TJ = 25C 2.5 IC = 10 mA 50 mA 2.0 250 mA 500 mA
1.0
*APPLIES FOR IC/IB hFE/3.0 *RVC for VCE(sat) 25C to 125C
2.0
55C to 25C 3.0 25C to 125C
1.5
4.0
VB for VBE
1.0
5.0 6.0 5.0 7.0
55C to 25C
0.5 0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
10
200 300
500
2810
MOTOROLA
High Voltage Transistor Surface Mount

NPN Silicon
PZTA42T1
SOT223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
MAXIMUM RATINGS
Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 300 300 6.0 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
1 2 3
DEVICE MARKING
P1D
Characteristic Thermal Resistance, Junction-to-Ambient(1) Symbol RJA Max 83.3 Unit C/W

OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter-Base Cutoff Current (VBE = 6.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2. 2. Pulse Test Conditions, tp = 300 s, = 0.02.
REV 2
2811
PZTA42T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE 25 40 40
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Feedback Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) fT Cre VCE(sat) VBE(sat) 50 3.0 0.5 0.9 MHz pF Vdc Vdc
2812
MOTOROLA
PNP Small Signal Darlington Transistor

This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High fT : 125 MHz Minimum The SOT-223 Package can be soldered using wave or reflow. SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use PZTA64T1 to order the 7 inch/1000 unit reel. Use PZTA64T3 to order the 13 inch/4000 unit reel. NPN Complement is PZTA14T1
COLLECTOR 2, 4
PZTA64T1
SOT-223 PACKAGE PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
4 1
BASE 1
2 3
EMITTER 3

Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Power Dissipation @ TA = 25C(1) Collector Current Operating and Storage Temperature Range Symbol VCES VCBO VEBO PD IC TJ, Tstg Value 30 30 10 1.5 500 65 to +150 Unit Vdc Vdc Vdc Watts mAdc C
DEVICE MARKING
P2V
Thermal Resistance from Junction to Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
REV 4
2813
PZTA64T1
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 A, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) Emitter-Base Cutoff Current (VBE = 10 Vdc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO IEBO ICBO 30 30 10 0.1 0.1 Vdc Vdc Vdc Adc Adc
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On-Voltage (VCE = 5.0 Vdc, IC = 100 mAdc) hFE 10,000 20,000 VCE(sat) VBE(on) 1.5 2.0 Vdc Vdc
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT 125 MHz
2814
PZTA64T1
200 hFE, DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 25C VCE = 2.0 V 5.0 V TA = 125C
10 V
55C
|h FE |, HIGH FREQUENCY CURRENT GAIN
10 VCE = 5.0 V f = 100 MHz TA = 25C
2.0 TA = 25C VBE(sat) @ IC/IB = 100
2.0 1.0
V, VOLTAGE (VOLTS)
4.0 3.0
1.6
0.4 0.2 0.1 1.0
2.0
5.0
500
1K
0 0.3 0.5
1.0
2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA)
200 300
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 IC = 10 mA 50 mA 100 mA 175 mA TA = 25C 300 mA
1.0 2.0 5.0 10 20 50 100 200 500 1K 2K IB, BASE CURRENT (A)
5K 10K
2815
MOTOROLA

PNP Silicon
PZTA92T1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 300 300 5.0 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
2 3
DEVICE MARKING
P2D
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C/W

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 200 Vdc, IE = 0) EmitterBase Cutoff Current (VBE = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 5.0 0.25 0.1 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Saturation Voltages (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) Vdc 0.5 0.9
CollectorBase Capacitance @ f = 1.0 MHz (VCB = 20 Vdc, IE = 0) CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Ccb fT 50 6.0 pF MHz
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%.
REV 2
2816
MOTOROLA

PNP Silicon
PZTA96T1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 450 450 5.0 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc
mAdc Watts C C
2 3
DEVICE MARKING
ZTA96
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 400 Vdc, IE = 0) EmitterBase Cutoff Current (VBE = 4.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 450 450 5.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 10 mAdc, VCE = 10 Vdc) Saturation Voltages (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) hFE 50 150 Vdc VCE(sat) VBE(sat) 0.6 1.0
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%.
REV 1
2817
MOTOROLA
Advance Information
Integrated Relay/Solenoid Driver
Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 300 mW at 3 V to 5 V Features Low Input Drive Current Internal Zener Clamp Routes Induced Current to Ground Rather Than Back to Supply Guaranteed Off State with No Input Connection Supports Large Systems with Minimal OffState Leakage ESD Resistant in Accordance with the 2000 V Human Body Model Provides a Robust Driver Interface Between Relay Coil and Sensitive Logic Circuits Applications include: Telecom Line Cards and Telephony Industrial Controls Security Systems Appliances and White Goods Automated Test Equipment Automotive Controls This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT23 package. It can be used to switch other 3 to 5 Vdc Inductive Loads such as solenoids and small DC motors. MAXIMUM RATINGS
Rating Power Supply Voltage Recommended Operating Supply Voltage Input Voltage Reverse Input Voltage Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Symbol VCC VCC Vin(fwd) Vin(rev) IO TJ TA Tstg
MDC3105LT1
RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK
3 1 2
CASE 31808, STYLE 6 SOT23 (TO236AB)
INTERNAL CIRCUIT DIAGRAM Vout Vin 1.0 k 6.8 V (1) 33 k GND (2) (3)
Value 6.0 2.05.5 6.0 0.5 300 150 40 to +85 65 to +150
Unit Vdc Vdc Vdc Vdc mA C C C
Characteristic Total Device Dissipation(1) Derate above 25C Thermal Resistance Junction to Ambient 1. FR5 PCB of 1 x 0.75 x 0.062, TA = 25C
Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol PD RqJA
Max 225 556
Unit mW C/W
2818
MDC3105LT1
OFF CHARACTERISTICS
Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (Vout = 5.5 Vdc, Vin = O.C., TA = 25C) (Vout = 5.5 Vdc, Vin = O.C., TA = 85C) V(BRout) V(BRout) IOO 5.0 30 6.4 6.8 0.7 7.2 V A
ON CHARACTERISTICS
Input Bias Current @ Vin = 4.0 Vdc (IO = 250 mA, Vout = 0.4 Vdc, TA = 40C) (correlated to a measurement @ 25C) Output Saturation Voltage (IO = 250 mA, Vin = 4.0 Vdc, TA = 40C) (correlated to a measurement @ 25C) Output Sink Current Continuous (TA = 40C, VCE = 0.4 Vdc, Vin = 4.0 Vdc ) (correlated to a measurement @ 25C) IC(on) 250 Iin 2.5 Vdc 0.2 0.4 mA mAdc
TYPICAL APPLICATIONDEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS

Characteristic Propagation Delay Times: High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04) Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04) High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04) High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04) Transition Times: Fall Time; Figures 1, 2 (5.0 V 74HC04) Rise Time; Figures 1, 2 (5.0 V 74HC04) Fall Time; Figures 1, 3 (3.0 V 74HC04) Rise Time; Figures 1, 3 (3.0 V 74HC04) Fall Time; Figures 1, 4 (5.0 V 74LS04) Rise Time; Figures 1, 4 (5.0 V 74LS04) Input Slew Rate(1) Symbol tPHL tPLH tPHL tPLH tPHL tPLH tf tr tf tr tf tr V/t in VCC 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 Min TBD Typ 55 430 85 315 55 2385 45 160 70 195 45 2400 Max ns V/ms Units ns
1. Minimum input slew rate must be followed to avoid overdissipating the device.
tf 90% 50% 10% tPLH 90% 50% 10% tTHL tTLH tPHL
tr VCC GND VZ VCC GND
Vin
Vout
Figure 1. Switching Waveforms
2819
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ + AROMAT TX2L23 V
Vout (3) MDC3105LT1 Vin (1) 1k 6.8 V 33 k 6.8 V
Vout (3) MDC3105LT1 1k 33 k Vin (1)
74HC04 OR EQUIVALENT
GND (2)
GND (2)
Figure 2. A 3.0V, 200mW Dual Coil Latching Relay Application with 5.0 VHCMOS Interface
+3.0 VDD +3.75 Vdc +4.5 VCC +5.5 Vdc
+ + AROMAT TX2L23 V
Vout (3) MDC3105LT1 Vin (1) 1k 6.8 V 33 k 6.8 V
Vout (3) MDC3105LT1 1k 33 k Vin (1)
GND (2)
GND (2)
Figure 3. A 3.0V, 200mW Dual Coil Latching Relay Application with 3.0 VHCMOS Interface 2820 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ + AROMAT TX2L23 V
Vout (3) MDC3105LT1 BAL99LT1 1k 6.8 V 33 k Vin (1) 6.8 V
Vout (3) MDC3105LT1 1k 33 k Vin (1) BAL99LT1
74LS04
74LS04
GND (2)
GND (2)
Figure 4. A 3.0V, 200mW Dual Coil Latching Relay Application with TTL Interface
+4.5 TO +5.5 Vdc
+ AROMAT R1 TX25 V R2
+ AROMAT TX25 V
Max Continuous Current Calculation R1 = R2 = 178 Nominal @ TA = 25C Vout (3) Assuming 10% Make Tolerance, R1 = R2 = (178 ) (0.9) = 160 Min @ TA = 25C TC for Annealed Copper Wire is 0.4%/C R1 = R2 = (160 ) [1+(0.004) (4025)] = 118 Min @ 40C
Vin (1)
N
Io
R1 in Parallel with R2 = 59 Min @ 40C + 5.5 V59Max Min0.4 V + 86 mA Max W
86 mA 300 mA Max Io spec. GND (2)
Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application
2821
MDC3105LT1
TYPICAL OPERATING WAVEFORMS
(Circuit of Figure 5)
4.5 225
3.5 V in (VOLTS) IC (mA) 10 30 50 TIME (ms) 70 90
175
2.5
125
1.5
75
500M
25 10 30 50 TIME (ms) 70 90
Figure 6. 20 Hz Square Wave Input
Figure 7. 20 Hz Square Wave Response
172
7 Vout (VOLTS) IZ (mA) 10 30 50 TIME (ms) 70 90
132
92
52
12 10 30 50 TIME (ms) 70 90
600 500 400 hFE 300 200 100 0 1 10 100 Io, OUTPUT SINK CURRENT (mA) 1000 Vo = 1.0 V Vo = 0.25 V TJ = 85C TJ = 25C TJ = 125C
1 TJ = 25C 0.8 OUTPUT VOLTAGE (V)
0.6 1 0.4 10 50
175 125
250 IC = 350 mA
TJ = 40C
0.2
0 1E5
1E4 1E3 INPUT CURRENT
1E2
Figure 10. Pulsed Current Gain 2822
Figure 11. Collector Saturation Region Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
Low Voltage Bias Stabilizer with Enable

Maintains Stable Bias Current in NType Discrete Bipolar Junction and Field Effect Transistors Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc Reduces Bias Current Variation Due to Temperature and UnittoUnit Parametric Changes Consumes Active High Enable is CMOS Compatible This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or NChannel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. The ENABLE polarity nulls internal current, Enable current, and RF transistor current in STANDBY. This device is intended to replace a circuit of three to six discrete components. The combination of low supply voltage, low quiescent current drain, and small package make the MDC5001T1 ideal for portable communications applications such as: Cellular Telephones Pagers PCN/PCS Portables GPS Receivers PCMCIA RF Modems Cordless Phones Broadband and Multiband Transceivers and Other Portable Wireless Products MAXIMUM RATINGS
Rating Power Supply Voltage Ambient Operating Temperature Range Storage Temperature Range Junction Temperature Collector Emitter Voltage (Q2) Enable Voltage (Pin 5) Symbol VCC TA Tstg TJ VCEO VENBL Value 15 40 to +85 65 to +150 150 15 VCC Unit Vdc C C C V V
MDC5001T1
SILICON SMALLBLOCK INTEGRATED CIRCUIT
t 0.5 mW at VCC = 2.75 V
5 4
CASE 419B01, Style 19 SOT363
INTERNAL CIRCUIT DIAGRAM

VCC (4)
R1 Q1 R2 Vref (6) Q2 VENBL (5) R5 R4 Q4 R6 Iout (1)
R3
GND (2) and (3)
Characteristic Total Device Power Dissipation (FR5 PCB of 1 0.75 0.062, TA = 25C) Derate above 25C Thermal Resistance, Junction to Ambient Symbol PD 150 1.2 RJA 833 Max Unit mW mW/C C/W
REV 1
2823
MDC5001T1
Characteristic Recommended Operating Supply Voltage Power Supply Current (VCC = 2.75 V) Vref, Iout are unterminated See Figure 8 Q2 Collector Emitter Breakdown Voltage (IC2 = 10 A, IB2 = 0) Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V) (Iout = 30 A) (Iout = 150 A) See Figure 1 Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V, 40C TA +85C) VCC Pulse Width = 10 mS, Duty Cycle = 1% (Iout = 10 A) (Iout = 30 A) (Iout = 100 A) See Figures 2 and 11 Symbol VCC ICC Min 1.8 Typ 2.75 130 Max 10 200 Unit Volts A
V(BR)CEO2 Vref
15
Volts Volts
2.050 2.110
2.075 2.135
2.100 2.160
DVref
5.0 15 25 10 30 50
mV
The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy. However, no responsibility for their accuracy is assumed by Motorola.
.MODEL Q4 NPN
BF = 136 BR = 0.2 CJC = 318.6 f CJE = 569.2 f CJS = 1.9 p EG = 1.215 FC = 0.5 IKF = 24.41 m IKR = 0.25 IRB = 0.0004 IS = 256E18 ISC = 1 f ISE = 500E18 ITF = 0.9018 MJC = 0.2161 MJE = 0.3373 MJS = 0.13 NC = 1.09 NE = 1.6 NF = 1.005 RB = 140 RBM = 70 RC = 180 RE = 1.6 TF = 553.6 p TR = 10 n VAF = 267.6 VAR = 12 VJC = 0.4172 VJE = 0.7245 VJS = 0.39 VTF = 10 XTB = 1.5 XTF = 2.077 XTI = 3
.MODEL Q1, Q2 PNP

BF = 87 BR = 0.6 CJC = 800E15 CJE = 46E15 EG = 1.215 FC = 0.5 IKF = 3.8E04 IKR = 2.0 IRB = 0.9E3 IS = 1.027E15 ISC = 10E18 ISE = 1.8E15 ITF = 2E3 MJC = 0.2161 MJE = 0.2161 NC = 0.8 NE = 1.38 NF = 1.015 NK = 0.5 NR = 1.0 RB = 720 RBM = 470 RC = 180 RE = 26 TF = 15E9 TR = 50E09 VAF = 54.93 VAR = 20 VAR = 20 VJC = 0.4172 VJE = 0.4172 VTF = 10 XTB = 1.5 XTF = 2.0 XTI = 3
RESISTOR VALUES
R1 = 12 K R2 = 6 K R3 = 3.4 K R4 = 12 K R5 = 20 K R6 = 40 K
These models can be retrieved electronically by accessing the Motorola Web page at http://designnet.sps.mot.com/models and searching the section on SMALLBLOCK models
2824
MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS
10 = 1000 m A = 500 m A = 100 m A = 10 mA Iout Iout Iout Iout 6 V ENBL = VCC TJ = 25C 8 7 6 5 4 3 2 1 7 8 9 0 0 1 2 3 4
Figure 1. Vref versus VCC @ Iout
2825
V CC , SUPPLY VOLTAGE (Vdc)
5 Vref (Vdc)
MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 10 through 15)
50 40 30 20 V ref (mV) 10 0 10 20 30 40 50 45 35 25 15 5 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (C) Iout = 10 mA ICC , SUPPLY CURRENT ( m Adc) VCC = 2.75 Vdc VENBL = VCC Iout = 500 mA Iout = 100 mA Iout = 30 mA 900 800 700 600 500 400 300 200 100 65 75 85 0 0 1 2 3 4 5 6 7 VCC, SUPPLY VOLTAGE (Vdc) 8 9 10 TJ = 85C TJ = 25C VENBL = VCC TJ = 40C
Figure 2. DVref versus TJ @ Iout

1000 500 H FE , Q2 DC CURRENT GAIN 300 200 100 50 30 20 10 10 VCE2 = Vout Vref = 1.5 Vdc 20 30 50 100 200 300 Iout, DC OUTPUT CURRENT (mAdc) 500 1000 TJ = 40C TJ = 25C TJ = 85C IENABLE (m Adc) 160 140 120 100 80 60 40 20 0 0
Figure 3. ICC versus VCC @ TJ
VCC = 2.75 Vdc Iref = 30 mA
TJ = 40C TJ = 25C
TJ = 85C
0.5
1.0
1.5 2.0 VENABLE (Vdc)
2.5
3.0
Figure 4. Q2 Current Gain versus Output Current @ TJ

6.0 VCC = 5.0 Vdc 5.0 4.0 Vref , (Vdc) 3.3 Vdc 3.0 2.0 1.0 2.75 Vdc 1.8 Vdc
Figure 5. Ienable versus Venable
Iout = 500 mA Iout = 30 mA
TJ = 25C MIN VENBL FOR STABLE Vref @ VCC 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Venable (Vdc) 3.5 4.0 4.5 5.0
Figure 6. Vref versus Venable @ VCC and Iout
2826
MDC5001T1
TYPICAL CLOSED LOOP PERFORMANCE (Refer to Circuits of Figures 16 & 17)
1.5 1.0 0.5 IC3 = 15 mA IC3 = 10 mA V ref (%) IC3 = 3 mA VCC = 2.75 Vdc VENBL = VCC
4.0 3.0 2.0 1.0 0 1.0 IC3 = 1 mA 2.0 3.0 65 75 85 0 VCC = 2.75 Vdc VENBL = VCC TA = 25C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA
D IC 3 (%)
0 0.5 1.0 1.5
2.0 45 35 25 15 5 5 15 25 35 45 55 TA, AMBIENT TEMPERATURE (C)
Figure 7. DIC3 versus TA @ IC3

10 VCC = 2.75 Vdc VENBL = VCC TA = 25C
Figure 8. DVref versus External Transistor DC Beta @ IC3
5.0
D I C 3 (%)
5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300
10 15
Figure 9. DIC3 versus External Transistor DC Beta @ IC3
2827
MDC5001T1
OPEN LOOP TEST CIRCUITS
ICC ICC VCC (4) VCC (4)
Q1 Q1 ENABLE (5) Vref (6) Q2 MDC5001 + Q4 Iout VCC GND (2) & (3) GND (2) & (3) + VBE3 = 0.7 V A V Vref Iout (1) Iout Iref
ENABLE (5)
Vref (6) Q2 Iout (1) MDC5001
Q4 VCC
See NOTE 1
Figure 10. ICC versus VCC Test Circuit
Figure 11. Vref versus VCC Test Circuit
VCC (4)
VCC (4)
Q1
IB Vref (6) ENABLE (5) Iref V Vref A GND (2) & (3) Q4
Q1
ENABLE (5)
Vref (6) Q2 MDC5001 Iout (1) Iout A Iout
Q2 MDC5001
Iout (1) Iout Iout
+ VCC = 2.75 V GND (2) & (3)
Q4
VBE3 = 0.7 V
1.5 V
See NOTE 1
Figure 12. Vref versus TJ Test Circuit
Figure 13. HFE versus Iout Test Circuit
VCC (4) + + VCC = 2.75 V ENABLE (5) IENBL A + Q1 VCC Vref (6) Q2 MDC5001 Q4 Iout (1) Iout Iref = 30 mA ENABLE (5) +
VCC (4)
Q1
Vref (6) Q2 MDC5001 Q4 Iout (1) Iout Vref + V Iout A + VBE3 = 0.7 V Iref
VENBL VENBL + GND (2) & (3) VBE3 = 0.7 V GND (2) & (3)
See NOTE 1
Figure 14. IENBL versus VENBL Test Circuit
Figure 15. Vref versus VENBL Test Circuit
NOTE 1: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref.
2828
MDC5001T1
CLOSED LOOP TEST CIRCUITS
VCC (4) A IC3
Q1
Vref (6) ENABLE (5) Q2 MDC5001 + VCC = 2.75 V Q4 Iout (1) A Iout V Vref VBE3
Q3
GND (2) & (3)
Figure 16. Vref and RF Stage IC3 versus HFE3 Test Circuit
VCC (4) A IC3
Q1
Vref (6) ENABLE (5) Q2 MDC5001 + VCC = 2.75 V Q4 0.1 mF 100 pF 0.018 mF GND (2) & (3) NOTE: External RCs used to Maintain Broadband Stability of MRF941 51 100 pF 0.018 mF Iout (1) 1K VBE3 Q3 MRF941 HFE = 113
51
Figure 17. RF Stage IC3 versus TA Test Circuit
2829
MDC5001T1
APPLICATION CIRCUITS
VCC (4) REGULATED VCC = 2.75 Vdc
IC3 = 3 mAdc Q1 R5 240 W
ENABLE (5) VENBL + Q4
Vref (6) Q2 MDC5001 Iout (1)
Vref = 2.025 Vdc 470 pF 180 1K Iout
30 nH 18 nH Q3 MRF9411 Typ RF OUT
VCC = 2.75 V GND (2) & (3)
470 pF RF IN
8.0 nH 9 pF
5STEP DESIGN PROCEDURE

Step 1: Step 2: Step 3: Step 4: Step 5: Choose VCC (1.8 V Min to 10 V Max) Insure that Min VENBL is minimum indicated in Figures 5 and 6. Choose bias current, IC3, and calculate needed Iout from typ HFE3 From Figure 1, read Vref for VCC and Iout calculated. Calculate Nominal R5 = (VCC Vref) (IC3 + Iout). Tweak as desired.
Figure 18. Class A Biasing of a Typical 900 MHz BJT Amplifier Application
VCC (4) REGULATED VCC = 2.75 Vdc
ID = 15 mAdc R5 43 W RFC
Q1
ENABLE (5) VENBL + Q4 VCC = 2.75 V
Vref (6) Q2 MDC5001 Iout (1)
Vref = 2.085 Vdc 1000 pF 6.8 nH 2.7 pF 1K RF OUT R6 22 K + EGS 5 Vdc Q3 MRF9811 Typ
Iout RF IN GND (2) & (3)
12.5 nH 1000 pF 6.1 pF
7STEP DESIGN PROCEDURE

Step 1: Step 2: Step 3: Step 4: Choose VCC (1.8 V Min to 10 V Max) Insure that Min VENBL is minimum indicated in Figures 5 and 6. Choose bias current, ID, and determine needed gatesource voltage, VGS. Choose Iout keeping in mind that too large an Iout can impair MDC5000 DVref/DTJ performance (Figure 2) but too large an R6 can cause IDGO & IGSO to bias on the FET. Step 5: Calculate R6 = (VGS + EGS) Iout Step 6: From Figure 1, read Vref for VCC & Iout chosen Step 7: Calculate Nominal R5 = (VCC Vref) (ID + Iout). Tweak as desired.
Figure 19. Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier 2830 Motorola SmallSignal Transistors, FETs and Diodes Device Data
Section 3
GreenLine Portfolio
In Brief . . .
New in this revision is Motorolas GreenLine portfolio of devices. These devices feature energyconserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the power demands of your products. In an increasingly powerhungry world, Motorolas GreenLine portfolio makes powerful sense. So much sense that we plan to continue adding devices to the portfolio. Chances are, there are Motorola GreenLine devices applicable to one or more of your products ones that can help save energy, dollars and the environment. Currently, our portfolio consists of three families: LowLeakage Switching Diodes: Reverse leakage specifications guaranteed to 500 pA. They help extend battery life and are ideal for small battery powered systems in which standby power is essential. Applications include ESD protection, reverse voltage protection, and steering logic. Bipolar Output Driver Transistors: Ultralow collector saturation voltage. They deliver more energy to the intended load with less power wasted through dissipation loss. Especially effective in lower voltage battery powered applications and prolong battery life in portable and handheld communications and personal digital equipment. Applications include low voltage display light drivers and general output drivers. Small Signal HDTMOS: Lowest ever drainsource resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss. Especially effective for lowcurrent applications where energy conservation is crucial. These small MOSFETs are ideal for spacesensitive power management circuitry. Applications include low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias switching. This chapter exclusively highlights the GreenLine devices, which are also listed in their respective Transistor, Diode and MOSFET chapters.
3 3 1 2 2 1
CASE 318-08 (TO-236AB) SOT-23
CASE 318D-04 SC59
6 4 1 2 1 3 2 3
CASE 318E-04 (TO-261AA) SOT-223
CASE 318G-02 TSOP6
3 1 2 1
CASE 419-02 SC70/SOT323
CASE 425-04 SOD123
31
MOTOROLA
BSS84LT1
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the Greenline Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Reduced power loss conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, load switching, power management in portable and batterypowered products such as computers, printers, cellular and cordless telephones. 1 Energy Efficient
GATE
3 DRAIN
PCHANNEL ENHANCEMENTMODE TMOS MOSFET
3 1 2
CASE 31808, Style 21 SOT23 (TO236AB) 2 SOURCE
Miniature SOT23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 50 20 130 520 225 55 to 150 556 260 Unit Vdc Vdc mA mW C C/W C
DEVICE MARKING
BSS84LT1 = PD
ORDERING INFORMATION
Device BSS84LT1 BSS84LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
REV 1
32
BSS84LT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 2.5 0.130 0.520 V A ( (VDD = 15 Vdc, ID = 2.5 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 30 10 5.0 pF VGS(th) rDS(on) |yfs| 0.8 50 5.0 2.0 10 Vdc Ohms mS V(BR)DSS IDSS IGSS 0.1 15 60 60 Adc 50 Vdc Adc Symbol Min Typ Max Unit

0.6 VDS = 10 V I D , DRAIN CURRENT (AMPS) 0.5 55C 0.4 0.3 0.2 0.1 0 150C 25C I D , DRAIN CURRENT (AMPS) 0.5 0.45 0.4 TJ = 25C VGS = 3.5 V 3.25 V
0.35 0.3 3.0 V
0.25 0.2 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10
0.15 0.1
0.05 1 1.5 2 2.5 3 3.5 VGS, GATETOSOURCE VOLTAGE (VOLTS) 4 0
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. OnRegion Characteristics
33
BSS84LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 9 VGS = 4.5 V 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C 150C RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
Figure 3. OnResistance versus Drain Current
RDS(on) , DRAINTOSOURCE RESISTANCE (NORMALIZED)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 55 VGS = 4.5 V ID = 0.13 A VGS = 10 V ID = 0.52 A
8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000 ID = 0.5 A VDS = 40 V TJ = 25C
45
95
145
TJ, JUNCTION TEMPERATURE (C)
QT, TOTAL GATE CHARGE (pC)
Figure 5. OnResistance Variation with Temperature
Figure 6. Gate Charge
1 I D , DIODE CURRENT (AMPS)
0.1
TJ = 150C
25C
55C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
34
MOTOROLA
BSS138LT1
N-Channel Enhancement Mode Logic Level SOT-23 MOSFET

Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications Miniature SOT23 Surface Mount Package saves board space
3 DRAIN
NCHANNEL LOGIC LEVEL TMOS FET TRANSISTOR
3 1 2
CASE 31808, Style 21 SOT23 (TO236A) 1 GATE
2 SOURCE

DEVICE MARKING
BSS138LT1 = J1
REV 1
35
BSS138LT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time TurnOff Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) Vdc 0 2 Adc ) td(on) td(off) 20 20 ns (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss 40 12 3.5 50 25 5.0 pF VGS(th) rDS(on) gfs 100 5.6 10 3.5 mmhos 0.5 1.5 Vdc Ohms V(BR)DSS IDSS IGSS 0.1 0.5 0.1 Adc 50 Vdc Adc Symbol Min Typ Max Unit
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
36
BSS138LT1
0.8 TJ = 25C 0.7 I D , DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V I D , DRAIN CURRENT (AMPS) VGS = 3.5 V 0.9 0.8 0.7 150C 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS) VDS = 10 V 55C 25C

2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 55 5 45 95 145 0.75 55 30 VGS = 4.5 V ID = 0.5 A Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.125 1.25
ID = 1.0 mA
0.875
20
45
70
95
120
145

VGS, GATETOSOURCE VOLTAGE (VOLTS) 10 VDS = 40 V TJ = 25C 8
Figure 4. Threshold Voltage Variation with Temperature
4 ID = 200 mA 2
0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC)
37
BSS138LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 10 9 8 150C 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 2.5 V RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 8 VGS = 2.75 V 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 25C 150C
55C

RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 4.5 V 150C 4.5
VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
150C
25C
55C
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
120 100
0.1
TJ = 150C
25C
55C 80 60 Ciss
0.01
40 20 Coss Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS)
0.001
38
MOTOROLA
MGSF1N02LT1
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
NCHANNEL ENHANCEMENTMODE TMOS MOSFET
3 DRAIN
1 2 3
1 GATE 2 SOURCE
CASE 31808, Style 21 SOT23 (TO236AB)

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: NZ Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 20 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
Device MGSF1N02LT1 MGSF1N02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
REV 2
39
MGSF1N02LT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.8 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 125 120 45 pF VGS(th) rDS(on) 0.075 0.115 0.090 0.130 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit

2.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 2 55C 2.5 2 VGS = 3.0 V 1.5 1 0.5 0 2.75 V 2.5 V 2.25 V 3.5 0 1 2 3 4 5 6 7 8 9 10 3 4V 3.5 V 3.25 V
1.5
TJ = 150C
0.5 25C 0 1 1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS)
310
MGSF1N02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.2 150C 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS) 55C VGS = 4.5 V 25C 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 55 5 45 95 145 VGS = 4.5 V ID = 1 A VGS = 10 V ID = 2 A
10 VDS = 16 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
1000 VGS = 0 V f = 1 MHz TJ = 25C Ciss 100 Coss Crss
0.1
0.01
0.001 0 0.2 0.4 0.6 0.8 1 VSD, DIODE FORWARD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
10
10
15
20
VDS, DRAINTOSOURCE VOLTAGE (Volts)
311
MOTOROLA
MGSF1N03LT1
3 DRAIN
1 2
CASE 31808, Style 21 SOT23 (TO236AB) 1 GATE 2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: N3 Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
REV 4
312
MGSF1N03LT1

2.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 2 2 2.5 VGS = 3.75 V 3.5 V
1.5 55C TJ = 150C 0.5 25C 0 1 1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS) 3.5
1.5
3.25 V
1 3.0 V 0.5 2.75 V 2.5 V 0 0 2 4 6 8 10
313
MGSF1N03LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS 0.24 150C 0.16 0.14 0.12 0.1 0.08 55C 0.06 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) VGS = 10 V 150C
0.19
VGS = 4.5 V 25C
0.14
25C
55C 0.09
0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 55 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2 A VGS = 4.5 V ID = 1 A
10 VDS = 24 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
350 300 C, CAPACITANCE (pF) VGS = 0 V f = 1 MHz TJ = 25C
0.1
TJ = 150C
25C
55C
250 200 150 100 Coss 50 Crss 0 4 8 12 16 20
0.01
Ciss
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
314
MOTOROLA
MGSF1P02ELT1
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
3 DRAIN
1 2
CASE 31808, Style 21 SOT23 (TO236AB) 1 GATE
2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: PC Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
Device MGSF1P02ELT1 MGSF1P02ELT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
315
MGSF1P02ELT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 0.75 Adc) (VGS = 2.5 Vdc, ID = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 130 120 60 pF VGS(th) rDS(on) 0.20 0.32 0.26 0.50 0.7 0.85 1.2 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
316
MOTOROLA
MGSF1P02LT1
3 DRAIN
1 2
2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: PC Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 20 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
Device MGSF1P02LT1 MGSF1P02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
REV 2
317
MGSF1P02LT1

1.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 1.25 1 0.75 0.5 0.25 0 55C TJ = 150C 1.25 1 3.0 V 1.5 VGS = 3.5 V
3.25 V
0.75 0.5 2.75 V 2.5 V 2.25 V
25C
0.25 0
1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS)
3.5
10
318
MGSF1P02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.55 0.4 0.38 0.36 0.34 0.32 0.3 0.28 0.26 0.24 0.22 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
150C 0.5 VGS = 4.5 V
0.45 25C 0.4 55C 0.35 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (AMPS)
1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 55 5 45 95 145 VGS = 4.5 V ID = .75 A VGS = 10 V ID = 1.5 A
10 VDS = 16 V TJ = 25C 8
4 ID = 1.5 A 2 0 0 1000 2000 3000 4000 5000 6000
0.1
0.01
0.001
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
10
10
319
MOTOROLA
MGSF3441VT1
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PCHANNEL ENHANCEMENTMODE TMOS MOSFET rDS(on) = 78 m (TYP)
1 2 5 6 DRAIN
D D G
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
3 GATE SOURCE 4
CASE 318G02, Style 1 TSOP 6 PLASTIC

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Mounted on FR4 t Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 3.3 20 2.0 55 to 150 128 260 Unit Vdc Vdc A W C C/W C
5 sec
Device MGSF3441VT1 MGSF3441VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
320
MGSF3441VT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 3.3 A) (VGS = 2.5 Vdc, ID = 2.9 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.80 1.0 20 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 27 17 52 45 3000 50 30 80 70 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.45 rDS(on) 0.078 0.110 0.090 0.135 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 4.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
321
MGSF3441VT1
20 VGS = 4.5 V 16 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 3.0 V 12 2.5 V 8.0 2.0 V 4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V) 0 0 1.0 2.0 3.0 4.0 VGS, GATETOSOURCE VOLTAGE (V) 4.0 V 3.5 V 16 25C 12 20 TC = 55C 125C
8.0
4.0
Figure 1. Output Characteristics
0.30 R DS(on) , ONRESISTANCE ( W )
1400 1200
0.24 C, CAPACITANCE (pF) VGS = 2.5 V 0.18 1000 800 600 400 Coss 200 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A) 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Crss Ciss
0.12
VGS = 4.5 V
0.06
4.0
VDS = 10 V ID = 3.3 A
R DS(on) , ONRESISTANCE ( W) (NORMALIZED)
5.0 VGS , GATETOSOURCE VOLTAGE (V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 3.3 A
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 10 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
Figure 6. OnResistance versus Junction Temperature
322
MGSF3441VT1
20 TJ = 150C R DS(on) , ONRESISTANCE ( W ) IS , SOURCE CURRENT (A) 10 TJ = 25C 0.24 0.30 ID = 3.3 A
0.18
0.12
0.06 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCETODRAIN VOLTAGE (V)
2.0
4.0
6.0
8.0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 7. SourceDrain Diode Forward Voltage
Figure 8. OnResistance versus GatetoSource Voltage
0.4 0.3 V GS(th) , VARIANCE (V) 0.2 0.1 0 0.1 0.2 50
20
16 POWER (W) 150
12
ID = 250 mA
8.0
4.0 0 25 0 25 50 75 100 125 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Power
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
SQUARE WAVE PULSE DURATION (sec)
Figure 11. Normalized Thermal Transient Impedance, JunctiontoAmbient
323
MOTOROLA
MGSF3441XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 1.5 20 950 55 to 150 132 260 Unit Vdc Vdc A mW C C/W C
Device MGSF3441XT1 MGSF3441XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
REV 2
324
MGSF3441XT1
325
MOTOROLA
MGSF3442VT1
DRAIN
NCHANNEL ENHANCEMENTMODE TMOS MOSFET rDS(on) = 58 m (TYP)
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Mounted on FR4 t Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 4.0 20 2.0 55 to 150 62.5 260 Unit Vdc Vdc A W C C/W C
5 sec
326
MGSF3442VT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 4.0 A) (VGS = 2.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 8.0 24 36 10 20 40 60 20 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.6 rDS(on) 0.058 0.072 0.070 0.095 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
327
MGSF3442VT1
20 VGS = 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 16 ID , DRAIN CURRENT (A) 20 TC = 55C 125C 25C
16 ID, DRAIN CURRENT (A)
12 2.0 V 8.0
12
8.0
4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V)
4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATETOSOURCE VOLTAGE (V)
0.14 R DS(on) , ONRESISTANCE ( W) 0.12 VGS = 2.5 V C, CAPACITANCE (pF) 0.10 0.08 0.06 0.04 0.02 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A)
1200 1000 800 600 400 200 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Ciss
VGS = 4.5 V
Coss Crss
5.0 VGS , GATETOSOURCE VOLTAGE (V) VDS = 10 V ID = 4.0 A
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 4.0 A
4.0
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
328
MGSF3442VT1
20 TJ = 150C R DS(on) , ONRESISTANCE ( W) IS , SOURCE CURRENT (A) TJ = 25C 10 0.16 0.20 ID = 4.0 A
0.12
0.08
0.04 0
2.0
4.0
6.0
8.0
0.2 0.1 V GS(th) , VARIANCE (V) 0 0.1 0.2 0.3 0.4 50 ID = 250 mA
20
16 POWER (W) 150
12
8.0
SINGLE PULSE
t2
329
MOTOROLA
MGSF3442XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

330
MGSF3442XT1
331
MOTOROLA
MGSF3454VT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Mounted on FR4 t Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 4.2 20 2.0 55 to 150 62.5 260 Unit Vdc Vdc A W C C/W C
5 sec
332
MGSF3454VT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 4.2 A) (VGS = 4.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 20 30 35 20 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit
333
MGSF3454VT1
20 VGS = 10, 9, 8, 7, 6V I D , DRAIN CURRENT (A) 16 5V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C
12 4V
12
125C
4 3V 0 0 1 2 3 4
VDS, DRAINTOSOURCE VOLTAGE (V)
0.20 R DS(on) , ONRESISTANCE (OHMS)
560 480 Ciss
0.16 C, CAPACITANCE (pF) 400 320 240 160 80 0 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss 6 12 Coss
0.12 VGS = 4.5 V VGS = 10 V 0.04
0.08
18
24
30
VDS DRAINTOSOURCE VOLTAGE (V)
Figure 3. OnResistance vs. Drain Current
10 VGS, GATETOSOURCE VOLTAGE (V) RDS(on) , ONRESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 4.2 A
1.75 VGS = 10 V ID = 4.2 A 1.50
1.25
2 0 0 1.5 3.0 4.5 6.0 7.5 9.0 Qg, TOTAL GATE CHARGE (nC)
1.00
0.75 50
25
0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C)
125
150
Figure 6. OnResistance vs. Junction Temperature
334
MGSF3454VT1
40 RDS(on) , ONRESISTANCE (OHMS) I S , SOURCE CURRENT (A) 0.20
0.16
10
TJ = 150C TJ = 25C
0.12
0.08
ID = 4.2 A
0.04
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCETODRAIN VOLTAGE (V)
2 4 6 8 VGS GATETOSOURCE VOLTAGE (V)
10
Figure 8. OnResistance vs. GatetoSource Voltage
0.4 0.2 V GS(th) , VARIANCE (V) 0.0 0.2 0.4 0.6 0.8 50
30
24 POWER (W) 125 150 ID = 250 A
18
12
25
25
50
75
100
0 0.01
0.10
TJ, TEMPERATURE (C)
1.00 TIME (sec)
10.00
2 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1 Duty Cycle = 0.5
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E03 1.0E02 t1 P(pk)
0.01 1.0E04
t2 DUTY CYCLE, D = t1/t2 1.0E01
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 1.0E+00 1.0E+01
Square Wave Pulse Duration (sec)
335
MOTOROLA
MGSF3454XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Device Marking = 3G Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 1.75 20 950 55 to 150 250 260 Unit Vdc Vdc A mW C C/W C
336
MGSF3454XT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.75 A) (VGS = 4.5 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 345 215 140 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit

7.0 VGS = 4.5 V 6.0 ID , DRAIN CURRENT (AMPS) 5.0 4.0 3.5 V 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 3.0 V 2.5 V 2.25 V 8.0 9.0 10 4.0 V R DS(on) , ONRESISTANCE (W) 0.10 VGS = 10 V 0.08 25C 0.06 55C 0.04 0.02 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ID, DRAIN CURRENT (AMPS) TJ = 150C 0.12
337
MGSF3454XT1
0.16 R DS(on) , ONRESISTANCE (W) 0.14 0.12 VGS = 4.5 V 0.10 0.08 55C 0.06 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT (AMPS) 10 0 4.0 8.0 12 16 20 24 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 25C TJ = 150C C, CAPACITANCE (pF) 1000
Ciss Coss Crss
100
VGS = 0 V f = 1.0 MHz TJ = 25C
VGS , GATETOSOURCE VOLTAGE (VOLTS)
10 VDS = 24 V TJ = 25C ID = 10 A R DS(on) , ONRESISTANCE (NORMALIZED)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) ID = 1.5 A VGS = 4.5 V
8.0
6.0
4.0
2.0 0 0 2.0 4.0 6.0 8.0 10 QG, TOTAL GATE CHARGE (nC)
1.6 R DS(on) , ONRESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) IS, SOURCE CURRENT (AMPS) ID = 6.4 A VGS = 10 V
10
1.0
TJ = 150C
25C 55C
0.1
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCETODRAIN VOLTAGE (VOLTS)
338
MGSF3454XT1
0.5 R DS(on) , ONRESISTANCE (W) 2.0 1.8 0.4 1.6 0.3 V GS(th) (VOLTS) 1.4 1.2 1.0 0.8 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATETOSOURCE VOLTAGE (VOLTS) 0.6 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = 250 mA
0.2 ID = 1.75 A 0.1
20
16 POWER (WATTS)
12
8.0
4.0 0 0.01 0.1 1.0 TIME (sec) 10 100
1.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 k SQUARE WAVE PULSE DURATION (sec) P(pk) RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TA = P(pk) RJA(t)
t2 DUTY CYCLE, D = t1/t2
t1
339
MOTOROLA
MGSF3455VT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

5 sec
340
MGSF3455VT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 3.5 A) (VGS = 4.5 Vdc, ID = 2.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 3000 20 30 35 20 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.080 0.134 0.100 0.190 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
341
MGSF3455VT1
20 VGS = 10, 9, 8, 7 V I D , DRAIN CURRENT (A) 16 5V 12 6V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C 125C 12
4V
4 3V 0 0 1 2 3 4
580 500 Ciss
0.24 C, CAPACITANCE (pF) 420 340 260 180 100 0 20 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss
0.18 VGS = 4.5 V 0.12 VGS = 10 V
Coss
0.06
12
18
24
30
1.60 1.45 1.30 1.15 1.00 0.85 0.7 50 VGS = 10 V ID = 3.5 A
2 0 0 1.5 3.0 4.5 6.0 Qg, TOTAL GATE CHARGE (nC)
25
125
150
342
MGSF3455VT1
20 RDS(on) , ONRESISTANCE (OHMS) 0.40
I S , SOURCE CURRENT (A)
10 TJ = 150C
0.32
0.24
TJ = 25C
0.16
ID = 3.5 A
0.08 0
10
VGS GATETOSOURCE VOLTAGE (V)
0.60 0.45 V GS(th) , VARIANCE (V) 0.30 0.15 0.0 0.15 0.3 50 ID = 250 A
30
24 POWER (W) 25 50 75 100 TJ, TEMPERATURE (C) 125 150
18
12
6 0 0.01
25
0.10
1.00 TIME (sec)
10.00
0.01 1.0E04
343
MOTOROLA
MGSF3455XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 1.45 10 400 55 to 150 300 260 Unit Vdc Vdc A mW C C/W C
344
MGSF3455XT1
345
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1

MMBD1000LT1
3 1 2
CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 CATHODE 1 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc
1
MMBD2000T1
3
mA
DEVICE MARKING
MMBD1000LT1 = AY MMBD2000T1 = DH MMBD3000T1 = XP MMSD1000T1 = 4K
CASE 419-02, STYLE 2 SC70/SOT323 3 CATHODE 1 ANODE
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Derate above 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Thermal Resistance Junction to Ambient MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA C/W 556 833 TJ, Tstg 55 to +150 C
1
MMBD3000T1 Max Unit mW

2 1 3
CASE 318D-04, STYLE 2 SC59 mW/C 3 CATHODE 2 ANODE
MMSD1000T1
2
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
CASE 425-04, STYLE 1 SOD123 1 CATHODE 2 ANODE
REV 1
346

Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 A) Reverse Voltage Leakage Current (VR = 75 V) Forward Voltage (IF = 1.0 mA) Forward Voltage (IF = 10 mA) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA) (Figure 1) V(BR) IR VF CD trr 30 500 850 950 2.0 3.0 V pA mV pF s Symbol Min Max Unit
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
Figure 1. Recovery Time Equivalent Test Circuit
347
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition. Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
ANODE 3 CATHODE 1 2 CATHODE
MMBD1005LT1 MMBD2005T1 MMBD3005T1

MMBD1005LT1
3 1 2
MMBD2005T1
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc mA
1 2
CASE 419-02, STYLE 4 SC70/SOT323
DEVICE MARKING
MMBD1005LT1 = A3 MMBD2005T1 = DI MMBD3005T1 = XQ MMBD3005T1
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Derate above 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Thermal Resistance Junction to Ambient MMBD1005LT1, MMBD3005T1 MMBD2005T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW CASE 318D-04, STYLE 5 SC59 mW/C C/W
2 1
TJ, Tstg
REV 1
348

Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 A) Reverse Voltage Leakage Current (VR = 75 V)(2) Forward Voltage (IF = 1.0 mA) Forward Voltage (IF = 10 mA) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA) (Figure 1) V(BR) IR VF CD trr 30 500 850 950 2.0 3.0 V pA mV pF s Symbol Min Max Unit
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition.
349
MOTOROLA
Switching Diode
3 CATHODE ANODE 1 2 ANODE

MMBD1010LT1
3 1 2
MAXIMUM RATINGS
MMBD2010T1
3 1 2
DEVICE MARKING
MMBD1010LT1 = A5 MMBD2010T1 = DP MMBD3010T1 = XS
MMBD3010T1
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Derate above 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Thermal Resistance Junction to Ambient MMBD1010LT1, MMBD3010T1 MMBD2010T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW
2 1 3
mW/C C/W
CASE 318D-04, STYLE 3 SC59
TJ, Tstg
REV 1
350

351
MOTOROLA
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
MMBF0201NLT1
3 DRAIN
NCHANNEL ENHANCEMENTMODE TMOS MOSFET rDS(on) = 1.0 OHM
3 1
1 GATE 2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Continuous @ TA = 70C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RJA TL Value 20 20 300 240 750 225 55 to 150 556 260 Unit Vdc Vdc mAdc
mW C C/W C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
Device MMBF0201NLT1 MMBF0201NLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
REV 1
352
MMBF0201NLT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 0.3 0.75 V A ( (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT 2.5 2.5 15 0.8 1400 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 45 25 5.0 pF VGS(th) rDS(on) gFS 0.75 1.0 450 1.0 1.4 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
353
MMBF0201NLT1
1.0 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS)
1.0 VGS = 5 V
0.8
0.8
VGS = 4 V
0.6
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
125C 25C 55C
0.4
0.2
0.2
VGS = 3 V
0.3
0.6
0.9
1.2
1.4

RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS)
1.5
2.4 2.0
ONRESISTANCE (OHMS)
1.2
0.9
VGS = 4.5 V
1.5
0.6 VGS = 10 V 0.3
1.0
0.5
0 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.8 1
5 10 15 VGS, GATETOSOURCE VOLTAGE (VOLTS)
20
16 14 VDS = 16 V ID = 300 mA VGS(th) , NORMALIZED 12 10 8 6 4 2 0 0 160 450 2000 3400
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 25 0 25 50 75 100 125 150 ID = 250 A
Qg, TOTAL GATE CHARGE (pC)
TEMPERATURE (C)
Figure 6. Threshold Voltage Variance Over Temperature
354
MMBF0201NLT1
1.8 RDS(on) , NORMALIZED (OHMS) 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V @ 100 mA VGS = 10 V @ 300 mA C, CAPACITANCE (pF)
100
80
60 Ciss
40
20
Coss Crss
25
25
50
75
100
125
150
10
15
20
10
SOURCE CURRENT (AMPS)
1.0
0.1 125C 0.01 25C 55C
0.001
0.3 0.6 0.9 1.2 SOURCETODRAIN FORWARD VOLTAGE (VOLTS)
1.4
Figure 9. SourcetoDrain Forward Voltage versus Continuous Current (IS)
355
MOTOROLA
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
MMBF0202PLT1
3 DRAIN
PCHANNEL ENHANCEMENTMODE TMOS MOSFET rDS(on) = 1.4 OHM
3 1 2
1 GATE

mW C C/W C
DEVICE MARKING
P3 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
Device MMBF0202PLT1 MMBF0202PLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
(Replaces MMBF0202P/D) 356 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBF0202PLT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) (VDD = 15 Vdc, RL = 75 , ID = 200 mAdc, mAdc VGEN = 10 V, RG = 6.0 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 2700 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 50 45 20 pF VGS(th) rDS(on) gFS 0.9 2.0 600 1.4 3.5 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.3 0.75 V A
357
MMBF0202PLT1
1.0 TC = 55C I D , DRAIN CURRENT (AMPS) 0.8 125C 0.6 I D , DRAIN CURRENT (AMPS) 25C
1.0 5V 0.8 VGS = 10, 9, 8, 7, 6 V 4V
0.6
0.4
0.4 3V 0.2
0.2

ONRESISTANCE (OHMS)
4 200 mA 3
2 VGS = 4.5 V 1 VGS = 10 V 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500
2 50 mA 1
0 0 5 10 15 VGS, GATETOSOURCE VOLTAGE (VOLTS) 20
16 14 VGS(th) , NORMALIZED 12 10 8 6 590 4 2 0 0 230 690 2270 3500 ID = 200 mA 2160 VDS = 10 V VDS = 16 V
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 50 75 25 TEMPERATURE (C) 100 125 150 ID = 250 A
358
MMBF0202PLT1
1.30 1.25 RDS(on) , NORMALIZED (OHMS) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 25 50 75 100 125 150 VGS = 10 V @ 200 mA VGS = 4.5 V @ 50 mA C, CAPACITANCE (pF)
140 120 100 80 60 40 20 0 0 5 10 TJ, JUNCTION TEMPERATURE (C) Crss 15 20 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) Ciss Coss
10
1.0 TJ = 150C 0.1 25C 0.01 55C
0.001 0 3 4 1 2 SOURCETODRAIN FORWARD VOLTAGE (VOLTS) 4.5
359
MOTOROLA
MMBF2201NT1
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70 / SOT 323 Surface Mount Package Saves Board Space
3 DRAIN
N CHANNEL ENHANCEMENT MODE TMOS MOSFET rDS(on) = 1.0 OHM
1 GATE 2 SOURCE
CASE 41902, Style 7 SC70/SOT323

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Continuous @ TA = 70C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID ID IDM PD TJ, Tstg RJA TL Value 20 20 300 240 750 150 1.2 55 to 150 833 260 Unit Vdc Vdc mAdc
mW mW/C C C/W C
DEVICE MARKING
Device MMBF2201NT1 MMBF2201NT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
REV 1
360
MMBF2201NT1
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 4 7 8 2 3 5 6 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9 10 VGS = 2.5 V VGS = 3 V VGS = 3.5 V RDS , ON RESISTANCE (OHMS) ID , DRAIN CURRENT (AMPS) VGS = 4 V 1.6 1.4 1.2 VGS = 4.5 V 1.0 ID = 100 mA 0.8 0.6 0.4 0.2 0 60 40 20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 160 VGS = 10 V ID = 300 mA
Figure 1. Typical Drain Characteristics
Figure 2. On Resistance versus Temperature
361
MMBF2201NT1
10 RDS , ON RESISTANCE (OHMS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 GATE SOURCE VOLTAGE (VOLTS) 9 10 0 0.1 0.2 0.5 0.3 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.7 0.8 VGS = 4.5 V
RDS , ON RESISTANCE (OHMS)
ID = 300 mA
VGS = 10 V
2 0
Figure 3. On Resistance versus Gate Source Voltage
Figure 4. On Resistance versus Drain Current
1.0
45 40 VGS = 0 V F = 1 mHz
I S , SOURCE CURRENT (AMPS)
35 0.1 C, CAPACITANCE (pF) 30 25 20 15 10 5 Coss Crss 0 2 4 8 12 16 6 10 14 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 18 20 Ciss
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE DRAIN FORWARD VOLTAGE (VOLTS) 1.0
Figure 5. Source Drain Forward Voltage
Figure 6. Capacitance Variation
1.0 0.9 I D , DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE SOURCE VOLTAGE (VOLTS) 4.0 4.5 55 25 150
362
MOTOROLA
MMBF2202PT1
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70/SOT323 Surface Mount Package Saves Board Space
3 DRAIN
1 GATE
2 SOURCE

mW mW/C C C/W C
DEVICE MARKING
Device MMBF2202PT1 MMBF2202PT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
REV 1
363
MMBF2202PT1
364
MMBF2202PT1
10 rDS(on) , ON RESISTANCE (OHMS) rDS(on) , ON RESISTANCE (OHMS)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 40 20 0 20 40 60 80 100 120 140 160 VGS = 10 V ID = 200 mA VGS = 4.5 V ID = 50 mA
ID = 200 mA
10
VGS, GATESOURCE VOLTAGE (VOLTS)
TEMPERATURE (C)
Figure 1. On Resistance versus GateSource Voltage
365
MMBF2202PT1
6 rDS(on) , ON RESISTANCE (OHMS) 5 4 3 2 1 0 VGS = 10 V VGS = 4.5 V 1.0 0.9 I D, DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 55 150 25
1 ID(on), DRAIN CURRENT (AMPS) IS , SOURCE CURRENT (AMPS)
0.8 0.7 0.6 0.5 0.4 0.3 VGS = 3.5 V 0.2 0.1 VGS = 3 V VGS = 4 V VGS = 5 V
25 0.1 150
VGS = 4.5 V
0.01
0.001
0.5
1.0
1.5
2.0
2.5
10
VSD, SOURCEDRAIN FORWARD VOLTAGE (VOLTS)
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 5. SourceDrain Forward Voltage
Figure 6. On Region Characteristics
50 45 40 C, CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 Coss Crss 16 18 20 VDS, DRAINSOURCE VOLTAGE (VOLTS) Ciss VGS = 0 V f = 1 MHz
366
MOTOROLA
Low Saturation Voltage PNP Silicon Driver Transistors

Part of the GreenLine Portfolio of devices with energyconserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC59 packages which are designed for low power surface mount applications. Low VCE(sat), < 0.1 V at 50 mA Applications LCD Backlight Driver Annunciator Driver General Output Device Driver MAXIMUM RATINGS (TA = 25C)
PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT
3 1 2
CASE 31808, STYLE 6 SOT-23
3 2 1
DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP
CASE 318D04, STYLE 1 SC-59
Rating Power Dissipation TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 250 1.8 RJA TJ Tstg 556 150 55 ~ + 150 Unit mW mW/C C/W C C BASE EMITTER COLLECTOR
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 A, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA Min 15 5.0 300 Max 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc A A Vdc
Base-Emitter Saturation Voltage
VBE(sat)(2)
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 2
367
368
Section 4
SmallSignal FieldEffect Transistors and MOSFETs
In Brief . . .
The data sheets on the following pages are designed to emphasize those FETs that by virtue of widespread industry use, ease of manufacture, and low relative cost, merit first consideration for new equipment design. CAUTION: Static electricity is a surface phenomenon which most commonly occurs when two dissimilar materials come into contact and then separate. Electro Static Discharge (ESD) damage of semiconductor components by operating personnel is quickly becoming a very prominent and significant problem. From simple bipolar designs to sensitive MOSFET structures, ESD has its unforgiving effect of degradation or destruction. Motorola believes it is important to extend any emphasizing note of cautiousness when handling and testing ANY FET product. Precautions include, but are not limited to, the implementation of static safe workstations and proper handling techniques. Additionally, it is very important to keep FET devices in their antistatic shipping containers and away from staticgenerating materials. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.
1 2 3
CASE 29-05 (TO-226AE) 1 WATT TO-92
CASE 29-04 (TO-226AA) TO-92
3 3 1 2 2 1
CASE 318-08 (TO-236AB) SOT-23
CASE 318D-04 SC59
6 4 1 2 1 3 2 3
CASE 318E-04 (TO-261AA) SOT-223
CASE 318G-02 TSOP6
3 1 2 1
CASE 419-02 SC70/SOT323
CASE 425-04 SOD123
41

SOT-23 and SOT-223 packages are available only in Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23 and SOT-223 packages. (See Section 6 on Packaging for additional information). SOT-23: available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 12 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/1000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/4000 unit reel.
SOT-223:


The SOT-23 package has a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SOT-23 package.
ABC D
42
MOTOROLA
TMOS FET Transistor

NChannel Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
MAXIMUM RATINGS
Rating Drain Source Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 200 500 350 2.8 55 to +150 mW mW/C C Unit Vdc Vdc Vdc Vpk mAdc CASE 2904, STYLE 22 TO92 (TO226AA)
1 2 3
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 357 300 Unit C/W C

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSSF 1.0 1.0 10 60 Vdc
Adc mAdc nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
VGS(th) rDS(on)
0.8
3.0
Vdc Ohm
VDS(on)
5.0 6.0 Vdc 2.5 0.45
REV 3
43
2N7000
ON CHARACTERISTICS(1) (continued)
OnState Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Id(on) gfs 75 100 mAdc mhos
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss 60 25 5.0 pF
SWITCHING CHARACTERISTICS(1)
TurnOn Delay Time TurnOff Delay Time ( (VDD = 15 V, ID = 500 mA, Rgen = 25 ohms, RL = 25 ohms) ton toff 10 10 ns
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
1.0 VDS = 10 V 0.8 55C 125C 25C
0.6
0.4
0.2
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
Figure 1. Ohmic Region
r DS(on) , STATIC DRAINSOURCE ONRESISTANCE (NORMALIZED)
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VGS = 10 V ID = 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VDS = VGS ID = 1.0 mA
Figure 3. Temperature versus Static DrainSource OnResistance
Figure 4. Temperature versus Gate Threshold Voltage
44
MOTOROLA
TMOS FET Transistor

3 DRAIN 1 GATE
2N7002LT1
2 SOURCE
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) Drain Current Continuous TC = 25C(1) Drain Current Continuous TC = 100C(1) Drain Current Pulsed(2) GateSource Voltage Continuous Nonrepetitive (tp 50 s) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 115 75 800 20 40 Unit Vdc Vdc mAdc
1 2
Vdc Vpk
Characteristic Total Device Dissipation FR5 Board,(3) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(4) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RJA PD Max 225 1.8 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
2N7002LT1 = 702

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) GateBody Leakage Current, Forward (VGS = 20 Vdc) GateBody Leakage Current, Reverse (VGS = 20 Vdc) 1. 2. 3. 4. TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 1.0 500 100 100 Vdc Adc nAdc nAdc
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. FR5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
REV 2
45
2N7002LT1
Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static DrainSource OnState Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C TC = 125C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C TC = 125C Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) VGS(th) ID(on) VDS(on) rDS(on) gFS 80 7.5 13.5 7.5 13.5 mmhos 3.75 0.375 Ohms 1.0 500 2.5 Vdc mA Vdc
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss 50 25 5.0 pF pF pF
TurnOn Delay Time TurnOff Delay Time ( (VDD = 25 Vdc, ID 500 mAdc, RG = 25 , RL = 50 )
td(on) td(off)
30 40
ns ns
BODYDRAIN DIODE RATINGS

Diode Forward OnVoltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. VSD IS ISM 1.5 115 800 Vdc mAdc mAdc
46
2N7002LT1
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 0.8 1.0 VDS = 10 V 55C 125C 25C
0.6
0.4
0.2
47
MOTOROLA
TMOS Switching
2 GATE
1 DRAIN
BS107 BS107A
3 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 20 30 250 500 350 55 to 150 mW C Unit Vdc Vdc Vpk mAdc
1 2 3

OFF CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 130 Vdc, VGS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) rDS(on) 4.5 4.8 28 14 6.0 6.4 200 0.01 30 10 nAdc Vdc nAdc
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static DrainSource On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) 1.0 3.0 Vdc Ohms

Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) Ciss Crss Coss gfs 200 60 6.0 30 400 pF pF pF mmhos
TurnOn Time TurnOff Time ton toff 6.0 12 15 15 ns ns
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REV 1
48
BS107 BS107A
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 50% 10% PULSE WIDTH 50%
OUTPUT Vout INVERTED 10 V INPUT Vin
Figure 1. Switching Test Circuit
10 VDS , DRAINSOURCE VOLTAGE (VOLTS)
200 180 VGS = 0 V
5.0 250 mA C, CAPACITANCE (pF) VGS = 10 V 2.0 1.0 100 mA 0.5 0.2 0.1 55
160 140 120 100 80 60 40 20 35 85 105 45 15 +5.0 25 65 TJ, JUNCTION TEMPERATURE (C) 125 145 0 0 Crss Coss 40 10 20 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 50 Ciss
Figure 3. On Voltage versus Temperature
0.8 ID(on) , DRAIN CURRENT (AMPS) VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 I D(on) , DRAIN CURRENT (AMPS) 0.7
0.7 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 3.0 V 18 20 4.0 V 5.0 V
Figure 5. Transfer Characteristic
Figure 6. Output Characteristic
49
BS107 BS107A
0.7 ID(on), DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 1.0 2.0 3.0 4.0 3.0 V 5.0 4.0 V 10 V 5.0 V
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic
410
MOTOROLA
TMOS FET Switching

1 DRAIN
BS170
2 GATE 3 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current(1) Total Device Dissipation @ TA = 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg
Value 60 20 40 0.5 350 55 to +150
Unit Vdc Vdc Vpk Adc mW C

OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc) IGSS V(BR)DSS 60 0.01 90 10 nAdc Vdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource On Resistance (VGS = 10 Vdc, ID = 200 mAdc) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) VGS(Th) rDS(on) ID(off) gfs 0.8 2.0 1.8 200 3.0 5.0 0.5 Vdc A mmhos

Input Capacitance (VDS = 10 Vdc, VGS = 0, f = 1.0 MHz) Ciss 60 pF
TurnOn Time (ID = 0.2 Adc) See Figure 1 TurnOff Time (ID = 0.2 Adc) See Figure 1 ton toff 4.0 4.0 10 10 ns ns
REV 1
411
BS170
RESISTIVE SWITCHING
+25 V ton 125 40 pF 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplititude 10 Volts) Vin PULSE WIDTH toff
Vin PULSE GENERATOR 50
90% 10% 90% 50%
2.0 VGS(th), THRESHOLD VOLTAGE I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA
2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V
1.6
1.2
0.8
0.8
0.4 0 50
100 0 50 TJ, JUNCTION TEMPERATURE (C)
150
1.0 2.0 3.0 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS)
4.0
Figure 3. VGS(th) Normalized versus Temperature
2.0 I D(on) , DRAIN CURRENT (AMPS)
VGS = 10 V 9.0 V 8.0 V C, CAPACITANCE (pF)
100 VGS = 0 V
1.6
80
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS) 40
60
40 Ciss 20 Coss Crss 0 10 20 30 40 50 60 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus DrainToSource Voltage
412
MOTOROLA
BSS84LT1
Part of the Greenline Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Reduced power loss conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, load switching, power management in portable and batterypowered products such as computers, printers, cellular and cordless telephones. 1 Energy Efficient
GATE
3 DRAIN
3 1 2

DEVICE MARKING
BSS84LT1 = PD
REV 1
413
BSS84LT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 2.5 0.130 0.520 V A ( (VDD = 15 Vdc, ID = 2.5 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 30 10 5.0 pF VGS(th) rDS(on) |yfs| 0.8 50 5.0 2.0 10 Vdc Ohms mS V(BR)DSS IDSS IGSS 0.1 15 60 60 Adc 50 Vdc Adc Symbol Min Typ Max Unit

0.6 VDS = 10 V I D , DRAIN CURRENT (AMPS) 0.5 55C 0.4 0.3 0.2 0.1 0 150C 25C I D , DRAIN CURRENT (AMPS) 0.5 0.45 0.4 TJ = 25C VGS = 3.5 V 3.25 V
0.35 0.3 3.0 V
0.25 0.2 2.75 V 2.5 V 2.25 V 0 1 2 3 4 5 6 7 8 9 10
0.15 0.1
0.05 1 1.5 2 2.5 3 3.5 VGS, GATETOSOURCE VOLTAGE (VOLTS) 4 0
414
BSS84LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 9 VGS = 4.5 V 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C 150C RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
2 1.8 1.6 1.4 1.2 1 0.8 0.6 55 VGS = 4.5 V ID = 0.13 A VGS = 10 V ID = 0.52 A
8 7 6 5 4 3 2 1 0 0 500 1000 1500 2000 ID = 0.5 A VDS = 40 V TJ = 25C
45
95
145
0.1
TJ = 150C
25C
55C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
415
MOTOROLA
TMOS FET Transistor

NChannel
BSS123LT1
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM
3 1 2
Value 100 20 40 0.17 0.68
Unit Vdc Vdc Vpk Adc CASE 318 08, STYLE 21 SOT 23 (TO 236AB)
Characteristic Total Device Dissipation FR 5 Board(3) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
BSS123LT1 = SA

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 250 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25C TJ = 125C GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 15 60 50 nAdc 100 Vdc Adc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) 1. 2. 3. 4. VGS(th) rDS(on) gfs 0.8 80 5.0 2.8 6.0 Vdc mmhos
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 ms, Duty Cycle 2.0%. FR 5 = 1.0 0.75 0.062 in. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
v
REV 2
416
BSS123LT1
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss 20 9.0 4.0 pF pF pF
TurnOn Delay Time TurnOff Delay Time ( (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 ) td(on) td(off) 20 40 ns ns
REVERSE DIODE
Diode Forward OnVoltage (ID = 0.34 Adc, VGS = 0 Vdc) 4. Pulse Test: Pulse Width VSD 1.3 V

1.0
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
VDS = 10 V 0.8
55C 125C
25C
0.6
0.4
0.2
1.0
9.0
10
417
MOTOROLA
BSS138LT1
N-Channel Enhancement Mode Logic Level SOT-23 MOSFET

Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low voltage applications Miniature SOT23 Surface Mount Package saves board space
3 DRAIN
NCHANNEL LOGIC LEVEL TMOS FET TRANSISTOR
3 1 2
CASE 31808, Style 21 SOT23 (TO236A) 1 GATE
2 SOURCE

DEVICE MARKING
BSS138LT1 = J1
REV 1
418
BSS138LT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time TurnOff Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) Vdc 0 2 Adc ) td(on) td(off) 20 20 ns (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss 40 12 3.5 50 25 5.0 pF VGS(th) rDS(on) gfs 100 5.6 10 3.5 mmhos 0.5 1.5 Vdc Ohms V(BR)DSS IDSS IGSS 0.1 0.5 0.1 Adc 50 Vdc Adc Symbol Min Typ Max Unit
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
419
BSS138LT1
0.8 TJ = 25C 0.7 I D , DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V I D , DRAIN CURRENT (AMPS) VGS = 3.5 V 0.9 0.8 0.7 150C 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS) VDS = 10 V 55C 25C

2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 55 5 45 95 145 0.75 55 30 VGS = 4.5 V ID = 0.5 A Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.125 1.25
ID = 1.0 mA
0.875
20
45
70
95
120
145

VGS, GATETOSOURCE VOLTAGE (VOLTS) 10 VDS = 40 V TJ = 25C 8
Figure 4. Threshold Voltage Variation with Temperature
4 ID = 200 mA 2
0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC)
420
BSS138LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 10 9 8 150C 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 2.5 V RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 8 VGS = 2.75 V 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 25C 150C
55C

RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 4.5 V 150C 4.5
VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
150C
25C
55C
0.4
0.45
0.5
120 100
0.1
TJ = 150C
25C
55C 80 60 Ciss
0.01
40 20 Coss Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS)
0.001
421
MOTOROLA
MGSF1N02LT1
3 DRAIN
1 2 3
1 GATE 2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: NZ Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 20 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
REV 2
422
MGSF1N02LT1

2.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 2 55C 2.5 2 VGS = 3.0 V 1.5 1 0.5 0 2.75 V 2.5 V 2.25 V 3.5 0 1 2 3 4 5 6 7 8 9 10 3 4V 3.5 V 3.25 V
1.5
TJ = 150C
0.5 25C 0 1 1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS)
423
MGSF1N02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.2 150C 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS) 55C VGS = 4.5 V 25C 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 55 5 45 95 145 VGS = 4.5 V ID = 1 A VGS = 10 V ID = 2 A
10 VDS = 16 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
0.1
0.01
0.001 0 0.2 0.4 0.6 0.8 1 VSD, DIODE FORWARD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
10
10
15
20
424
MOTOROLA
MGSF1N03LT1
3 DRAIN
1 2
CASE 31808, Style 21 SOT23 (TO236AB) 1 GATE 2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: N3 Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
REV 4
425
MGSF1N03LT1

2.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 2 2 2.5 VGS = 3.75 V 3.5 V
1.5 55C TJ = 150C 0.5 25C 0 1 1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS) 3.5
1.5
3.25 V
1 3.0 V 0.5 2.75 V 2.5 V 0 0 2 4 6 8 10
426
MGSF1N03LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS 0.24 150C 0.16 0.14 0.12 0.1 0.08 55C 0.06 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) VGS = 10 V 150C
0.19
VGS = 4.5 V 25C
0.14
25C
55C 0.09
0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 55 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2 A VGS = 4.5 V ID = 1 A
10 VDS = 24 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
350 300 C, CAPACITANCE (pF) VGS = 0 V f = 1 MHz TJ = 25C
0.1
TJ = 150C
25C
55C
250 200 150 100 Coss 50 Crss 0 4 8 12 16 20
0.01
Ciss
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
427
MOTOROLA
MGSF1P02ELT1
3 DRAIN
1 2
2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: PC Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
Device MGSF1P02ELT1 MGSF1P02ELT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
428
MGSF1P02ELT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 0.75 Adc) (VGS = 2.5 Vdc, ID = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 130 120 60 pF VGS(th) rDS(on) 0.20 0.32 0.26 0.50 0.7 0.85 1.2 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
429
MOTOROLA
MGSF1P02LT1
3 DRAIN
1 2
2 SOURCE

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Device Marking: PC Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 20 750 2000 400 55 to 150 300 260 Unit Vdc Vdc mA mW C C/W C
Device MGSF1P02LT1 MGSF1P02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
REV 2
430
MGSF1P02LT1

1.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 1.25 1 0.75 0.5 0.25 0 55C TJ = 150C 1.25 1 3.0 V 1.5 VGS = 3.5 V
3.25 V
0.75 0.5 2.75 V 2.5 V 2.25 V
25C
0.25 0
1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS)
3.5
10
431
MGSF1P02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.55 0.4 0.38 0.36 0.34 0.32 0.3 0.28 0.26 0.24 0.22 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
150C 0.5 VGS = 4.5 V
0.45 25C 0.4 55C 0.35 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (AMPS)
1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 55 5 45 95 145 VGS = 4.5 V ID = .75 A VGS = 10 V ID = 1.5 A
10 VDS = 16 V TJ = 25C 8
4 ID = 1.5 A 2 0 0 1000 2000 3000 4000 5000 6000
0.1
0.01
0.001
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
10
10
432
MOTOROLA
MGSF3441VT1
1 2 5 6 DRAIN
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Mounted on FR4 t Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 3.3 20 2.0 55 to 150 128 260 Unit Vdc Vdc A W C C/W C
5 sec
433
MGSF3441VT1
434
MGSF3441VT1
20 VGS = 4.5 V 16 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 3.0 V 12 2.5 V 8.0 2.0 V 4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V) 0 0 1.0 2.0 3.0 4.0 VGS, GATETOSOURCE VOLTAGE (V) 4.0 V 3.5 V 16 25C 12 20 TC = 55C 125C
8.0
4.0
0.30 R DS(on) , ONRESISTANCE ( W )
1400 1200
0.24 C, CAPACITANCE (pF) VGS = 2.5 V 0.18 1000 800 600 400 Coss 200 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A) 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Crss Ciss
0.12
VGS = 4.5 V
0.06
4.0
VDS = 10 V ID = 3.3 A
5.0 VGS , GATETOSOURCE VOLTAGE (V)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 3.3 A
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 10 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
435
MGSF3441VT1
20 TJ = 150C R DS(on) , ONRESISTANCE ( W ) IS , SOURCE CURRENT (A) 10 TJ = 25C 0.24 0.30 ID = 3.3 A
0.18
0.12
0.06 0
2.0
4.0
6.0
8.0
0.4 0.3 V GS(th) , VARIANCE (V) 0.2 0.1 0 0.1 0.2 50
20
16 POWER (W) 150
12
ID = 250 mA
8.0
SINGLE PULSE
t2
436
MOTOROLA
MGSF3441XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

REV 2
437
MGSF3441XT1
438
MOTOROLA
MGSF3442VT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Mounted on FR4 t Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 20 8.0 4.0 20 2.0 55 to 150 62.5 260 Unit Vdc Vdc A W C C/W C
5 sec
439
MGSF3442VT1
440
MGSF3442VT1
20 VGS = 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 16 ID , DRAIN CURRENT (A) 20 TC = 55C 125C 25C
16 ID, DRAIN CURRENT (A)
12 2.0 V 8.0
12
8.0
4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V)
4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATETOSOURCE VOLTAGE (V)
0.14 R DS(on) , ONRESISTANCE ( W) 0.12 VGS = 2.5 V C, CAPACITANCE (pF) 0.10 0.08 0.06 0.04 0.02 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A)
1200 1000 800 600 400 200 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Ciss
VGS = 4.5 V
Coss Crss
5.0 VGS , GATETOSOURCE VOLTAGE (V) VDS = 10 V ID = 4.0 A
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 4.0 A
4.0
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
441
MGSF3442VT1
20 TJ = 150C R DS(on) , ONRESISTANCE ( W) IS , SOURCE CURRENT (A) TJ = 25C 10 0.16 0.20 ID = 4.0 A
0.12
0.08
0.04 0
2.0
4.0
6.0
8.0
0.2 0.1 V GS(th) , VARIANCE (V) 0 0.1 0.2 0.3 0.4 50 ID = 250 mA
20
16 POWER (W) 150
12
8.0
SINGLE PULSE
t2
442
MOTOROLA
MGSF3442XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

443
MGSF3442XT1
444
MOTOROLA
MGSF3454VT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

5 sec
445
MGSF3454VT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 4.2 A) (VGS = 4.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 20 30 35 20 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit
446
MGSF3454VT1
20 VGS = 10, 9, 8, 7, 6V I D , DRAIN CURRENT (A) 16 5V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C
12 4V
12
125C
4 3V 0 0 1 2 3 4
560 480 Ciss
0.16 C, CAPACITANCE (pF) 400 320 240 160 80 0 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss 6 12 Coss
0.12 VGS = 4.5 V VGS = 10 V 0.04
0.08
18
24
30
1.75 VGS = 10 V ID = 4.2 A 1.50
1.25
2 0 0 1.5 3.0 4.5 6.0 7.5 9.0 Qg, TOTAL GATE CHARGE (nC)
1.00
0.75 50
25
125
150
447
MGSF3454VT1
40 RDS(on) , ONRESISTANCE (OHMS) I S , SOURCE CURRENT (A) 0.20
0.16
10
TJ = 150C TJ = 25C
0.12
0.08
ID = 4.2 A
0.04
2 4 6 8 VGS GATETOSOURCE VOLTAGE (V)
10
0.4 0.2 V GS(th) , VARIANCE (V) 0.0 0.2 0.4 0.6 0.8 50
30
24 POWER (W) 125 150 ID = 250 A
18
12
25
25
50
75
100
0 0.01
0.10
TJ, TEMPERATURE (C)
1.00 TIME (sec)
10.00
0.01 1.0E04
448
MOTOROLA
MGSF3454XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Device Marking = 3G Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 1.75 20 950 55 to 150 250 260 Unit Vdc Vdc A mW C C/W C
449
MGSF3454XT1
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.75 A) (VGS = 4.5 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 345 215 140 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit

7.0 VGS = 4.5 V 6.0 ID , DRAIN CURRENT (AMPS) 5.0 4.0 3.5 V 3.0 2.0 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 3.0 V 2.5 V 2.25 V 8.0 9.0 10 4.0 V R DS(on) , ONRESISTANCE (W) 0.10 VGS = 10 V 0.08 25C 0.06 55C 0.04 0.02 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 ID, DRAIN CURRENT (AMPS) TJ = 150C 0.12
450
MGSF3454XT1
0.16 R DS(on) , ONRESISTANCE (W) 0.14 0.12 VGS = 4.5 V 0.10 0.08 55C 0.06 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT (AMPS) 10 0 4.0 8.0 12 16 20 24 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 25C TJ = 150C C, CAPACITANCE (pF) 1000
Ciss Coss Crss
100
VGS = 0 V f = 1.0 MHz TJ = 25C
VGS , GATETOSOURCE VOLTAGE (VOLTS)
10 VDS = 24 V TJ = 25C ID = 10 A R DS(on) , ONRESISTANCE (NORMALIZED)
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) ID = 1.5 A VGS = 4.5 V
8.0
6.0
4.0
2.0 0 0 2.0 4.0 6.0 8.0 10 QG, TOTAL GATE CHARGE (nC)
1.6 R DS(on) , ONRESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) IS, SOURCE CURRENT (AMPS) ID = 6.4 A VGS = 10 V
10
1.0
TJ = 150C
25C 55C
0.1
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCETODRAIN VOLTAGE (VOLTS)
451
MGSF3454XT1
0.5 R DS(on) , ONRESISTANCE (W) 2.0 1.8 0.4 1.6 0.3 V GS(th) (VOLTS) 1.4 1.2 1.0 0.8 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATETOSOURCE VOLTAGE (VOLTS) 0.6 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = 250 mA
0.2 ID = 1.75 A 0.1
20
16 POWER (WATTS)
12
8.0
4.0 0 0.01 0.1 1.0 TIME (sec) 10 100
1.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 k SQUARE WAVE PULSE DURATION (sec) P(pk) RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TA = P(pk) RJA(t)
t2 DUTY CYCLE, D = t1/t2
t1
452
MOTOROLA
MGSF3455VT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

5 sec
453
MGSF3455VT1
454
MGSF3455VT1
20 VGS = 10, 9, 8, 7 V I D , DRAIN CURRENT (A) 16 5V 12 6V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C 125C 12
4V
4 3V 0 0 1 2 3 4
580 500 Ciss
0.24 C, CAPACITANCE (pF) 420 340 260 180 100 0 20 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss
0.18 VGS = 4.5 V 0.12 VGS = 10 V
Coss
0.06
12
18
24
30
1.60 1.45 1.30 1.15 1.00 0.85 0.7 50 VGS = 10 V ID = 3.5 A
2 0 0 1.5 3.0 4.5 6.0 Qg, TOTAL GATE CHARGE (nC)
25
125
150
455
MGSF3455VT1
20 RDS(on) , ONRESISTANCE (OHMS) 0.40
I S , SOURCE CURRENT (A)
10 TJ = 150C
0.32
0.24
TJ = 25C
0.16
ID = 3.5 A
0.08 0
10
VGS GATETOSOURCE VOLTAGE (V)
0.60 0.45 V GS(th) , VARIANCE (V) 0.30 0.15 0.0 0.15 0.3 50 ID = 250 A
30
24 POWER (W) 25 50 75 100 TJ, TEMPERATURE (C) 125 150
18
12
6 0 0.01
25
0.10
1.00 TIME (sec)
10.00
0.01 1.0E04
456
MOTOROLA
MGSF3455XT1
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Continuous @ TA = 25C Drain Current Pulsed Drain Current (tp 10 s) Total Power Dissipation @ TA = 25C Operating and Storage Temperature Range Thermal Resistance JunctiontoAmbient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID IDM PD TJ, Tstg RJA TL Value 30 20 1.45 10 400 55 to 150 300 260 Unit Vdc Vdc A mW C C/W C
457
MGSF3455XT1
458
MOTOROLA
TMOS FET Transistor

NChannel
1 GATE
DRAIN 3
MMBF170LT1
2 SOURCE
3 1 2
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 ms) Drain Current Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 20 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc
DEVICE MARKING
MMBF170LT1 = 6Z

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 mA) GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IGSS 60 10 Vdc nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 200 mA) OnState Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 3.0 5.0 0.5 Vdc
W mA
pF
Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss 60
SWITCHING CHARACTERISTICS (2)

TurnOn Delay Time TurnOff Delay Time ( (VDD = 25 Vdc, ID = 500 mA, Rgen = 50 W) Figure 1 td(on) td(off) 10 10 ns
1. FR 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle
v 2.0%.
REV 2
459
MMBF170LT1
+25 V 125 W 20 dB 50 W ATTENUATOR ton td(on) TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout INPUT 50% 50 W 1 MW Vin 10% PULSE WIDTH tr 90% 10% 90% 50% td(off) 90% toff tf
PULSE GENERATOR 50 W
Vin 40 pF
(Vin AMPLITUDE 10 VOLTS)
Figure 2. Switching Waveform
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
1.0 VDS = 10 V 0.8 55C 125C 25C
0.6
0.4
0.2
1.0
9.0
10
460
MOTOROLA
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
MMBF0201NLT1
3 DRAIN
NCHANNEL ENHANCEMENTMODE TMOS MOSFET rDS(on) = 1.0 OHM
3 1
1 GATE 2 SOURCE

mW C C/W C
DEVICE MARKING
Device MMBF0201NLT1 MMBF0201NLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
REV 1
461
MMBF0201NLT1
462
MMBF0201NLT1
1.0 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS)
1.0 VGS = 5 V
0.8
0.8
VGS = 4 V
0.6
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
125C 25C 55C
0.4
0.2
0.2
VGS = 3 V
0.3
0.6
0.9
1.2
1.4

1.5
2.4 2.0
ONRESISTANCE (OHMS)
1.2
0.9
VGS = 4.5 V
1.5
0.6 VGS = 10 V 0.3
1.0
0.5
0 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.8 1
20
16 14 VDS = 16 V ID = 300 mA VGS(th) , NORMALIZED 12 10 8 6 4 2 0 0 160 450 2000 3400
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 25 0 25 50 75 100 125 150 ID = 250 A
TEMPERATURE (C)
463
MMBF0201NLT1
1.8 RDS(on) , NORMALIZED (OHMS) 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V @ 100 mA VGS = 10 V @ 300 mA C, CAPACITANCE (pF)
100
80
60 Ciss
40
20
Coss Crss
25
25
50
75
100
125
150
10
15
20
10
1.0
0.1 125C 0.01 25C 55C
0.001
0.3 0.6 0.9 1.2 SOURCETODRAIN FORWARD VOLTAGE (VOLTS)
1.4
464
MOTOROLA
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
MMBF0202PLT1
3 DRAIN
3 1 2
1 GATE

mW C C/W C
DEVICE MARKING
Device MMBF0202PLT1 MMBF0202PLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
(Replaces MMBF0202P/D) Motorola SmallSignal Transistors, FETs and Diodes Device Data 465
MMBF0202PLT1
466
MMBF0202PLT1
1.0 TC = 55C I D , DRAIN CURRENT (AMPS) 0.8 125C 0.6 I D , DRAIN CURRENT (AMPS) 25C
1.0 5V 0.8 VGS = 10, 9, 8, 7, 6 V 4V
0.6
0.4
0.4 3V 0.2
0.2

ONRESISTANCE (OHMS)
4 200 mA 3
2 VGS = 4.5 V 1 VGS = 10 V 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500
2 50 mA 1
0 0 5 10 15 VGS, GATETOSOURCE VOLTAGE (VOLTS) 20
16 14 VGS(th) , NORMALIZED 12 10 8 6 590 4 2 0 0 230 690 2270 3500 ID = 200 mA 2160 VDS = 10 V VDS = 16 V
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 50 75 25 TEMPERATURE (C) 100 125 150 ID = 250 A
467
MMBF0202PLT1
1.30 1.25 RDS(on) , NORMALIZED (OHMS) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 25 50 75 100 125 150 VGS = 10 V @ 200 mA VGS = 4.5 V @ 50 mA C, CAPACITANCE (pF)
140 120 100 80 60 40 20 0 0 5 10 TJ, JUNCTION TEMPERATURE (C) Crss 15 20 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) Ciss Coss
10
1.0 TJ = 150C 0.1 25C 0.01 55C
0.001 0 3 4 1 2 SOURCETODRAIN FORWARD VOLTAGE (VOLTS) 4.5
468
MOTOROLA
MMBF2201NT1
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70 / SOT 323 Surface Mount Package Saves Board Space
3 DRAIN
N CHANNEL ENHANCEMENT MODE TMOS MOSFET rDS(on) = 1.0 OHM
1 GATE 2 SOURCE
CASE 41902, Style 7 SC70/SOT323

mW mW/C C C/W C
DEVICE MARKING
Device MMBF2201NT1 MMBF2201NT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
REV 1
469
MMBF2201NT1
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 4 7 8 2 3 5 6 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9 10 VGS = 2.5 V VGS = 3 V VGS = 3.5 V RDS , ON RESISTANCE (OHMS) ID , DRAIN CURRENT (AMPS) VGS = 4 V 1.6 1.4 1.2 VGS = 4.5 V 1.0 ID = 100 mA 0.8 0.6 0.4 0.2 0 60 40 20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 160 VGS = 10 V ID = 300 mA
470
MMBF2201NT1
10 RDS , ON RESISTANCE (OHMS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 GATE SOURCE VOLTAGE (VOLTS) 9 10 0 0.1 0.2 0.5 0.3 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.7 0.8 VGS = 4.5 V
RDS , ON RESISTANCE (OHMS)
ID = 300 mA
VGS = 10 V
2 0
Figure 3. On Resistance versus Gate Source Voltage
1.0
45 40 VGS = 0 V F = 1 mHz
I S , SOURCE CURRENT (AMPS)
35 0.1 C, CAPACITANCE (pF) 30 25 20 15 10 5 Coss Crss 0 2 4 8 12 16 6 10 14 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 18 20 Ciss
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE DRAIN FORWARD VOLTAGE (VOLTS) 1.0
Figure 5. Source Drain Forward Voltage
1.0 0.9 I D , DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE SOURCE VOLTAGE (VOLTS) 4.0 4.5 55 25 150
471
MOTOROLA
MMBF2202PT1
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70/SOT323 Surface Mount Package Saves Board Space
3 DRAIN
1 GATE
2 SOURCE

mW mW/C C C/W C
DEVICE MARKING
Device MMBF2202PT1 MMBF2202PT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
REV 1
472
MMBF2202PT1
473
MMBF2202PT1
10 rDS(on) , ON RESISTANCE (OHMS) rDS(on) , ON RESISTANCE (OHMS)
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 40 20 0 20 40 60 80 100 120 140 160 VGS = 10 V ID = 200 mA VGS = 4.5 V ID = 50 mA
ID = 200 mA
10
TEMPERATURE (C)
Figure 1. On Resistance versus GateSource Voltage
474
MMBF2202PT1
6 rDS(on) , ON RESISTANCE (OHMS) 5 4 3 2 1 0 VGS = 10 V VGS = 4.5 V 1.0 0.9 I D, DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 55 150 25
1 ID(on), DRAIN CURRENT (AMPS) IS , SOURCE CURRENT (AMPS)
0.8 0.7 0.6 0.5 0.4 0.3 VGS = 3.5 V 0.2 0.1 VGS = 3 V VGS = 4 V VGS = 5 V
25 0.1 150
VGS = 4.5 V
0.01
0.001
0.5
1.0
1.5
2.0
2.5
10
VSD, SOURCEDRAIN FORWARD VOLTAGE (VOLTS)
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 5. SourceDrain Forward Voltage
Figure 6. On Region Characteristics
50 45 40 C, CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 Coss Crss 16 18 20 VDS, DRAINSOURCE VOLTAGE (VOLTS) Ciss VGS = 0 V f = 1 MHz
475
MOTOROLA
Medium Power Field Effect Transistor

NChannel EnhancementMode Silicon Gate TMOS SOT223 for Surface Mount
This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dcdc converters, solenoid and relay drivers. The device is housed in the SOT223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds RDS(on) = 14 Ohm Max Low Drive Requirement The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use MMFT107T1 to order the 7 inch/1000 unit reel Use MMFT107T3 to order the 13 inch/4000 unit reel
1 GATE 3 SOURCE 2,4 DRAIN
MMFT107T1
MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX
4 1
2 3

Rating DraintoSource Voltage GatetoSource Voltage NonRepetitive Drain Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VDSS VGS ID PD TJ, Tstg Value 200 20 250 0.8 6.4 65 to 150 Unit Volts Volts mAdc Watts mW/C C
DEVICE MARKING
FT107
Thermal Resistance JunctiontoAmbient Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 156 260 10 C/W C Sec
1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended footprint.
REV 3
476
MMFT107T1
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) GateBody Leakage Current Reverse (VGS = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 200 30 10 Vdc nAdc nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mA) DraintoSource OnVoltage (VGS = 10 V, ID = 200 mA) Forward Transconductance (VDS = 25 V, ID = 250 mA) VGS(th) RDS(on) VDS(on) gfs 1.0 300 3.0 14 2.8 Vdc Ohms Vdc mmhos
Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss 60 30 6.0 pF
SOURCE DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage Continuous Source Current, Body Diode Pulsed Source Current, Body Diode 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (VGS = 0, IS = 250 mA) VF IS ISM 0.8 250 500 V mA

2.5 TJ = 25C I D, DRAIN CURRENT (AMPS) 2 VGS = 10 V 500 VDS = 10 V I D, DRAIN CURRENT (mA) 400
1.5
6V 4V
5V
300
1 3V
200
0.5
100
TJ = 125C 55C 0
25C
0 0 4 6 8 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 2 10
477
MMFT107T1
RDS(on) , DRAINSOURCE RESISTANCE (NORMALIZED)
RDS(on) , DRAINSOURCE RESISTANCE (OHMS)
10 VGS = 10 V 8 TJ = 125C
10 ID = 1 A VGS = 10 V
4 25C 2 55C 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500
0.1 75
50
25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C)
125
150
250 VGS = 0 V f = 1 MHz TJ = 25C
I D, DRAIN CURRENT (AMPS)
200 C, CAPACITANCE (pF)
150
0.1
100
Ciss Coss Crss
TJ = 125C 0.01
25C
50
0.3 0.6 0.9 1.2 1.5 VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS)
10 15 20 25 VDS, DRAINSOURCE VOLTAGE (VOLTS)
30
10 gFS, TRANSCONDUCTANCE (mhos) 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg, TOTAL GATE CHARGE (nC) 4 4.5 5 160 V VDS = 100 V ID = 200 mA
2 VDS = 10 V 1.5
1 TJ = 55C 0.5 25C 125C
100
200 300 ID, DRAIN CURRENT (AMPS)
400
500
Figure 7. Gate Charge versus GatetoSource Voltage
Figure 8. Transconductance
478
MOTOROLA

This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dcdc converters, solenoid and relay drivers. The device is housed in the SOT223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds RDS(on) = 1.7 Ohm Max Low Drive Requirement The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use MMFT960T1 to order the 7 inch/1000 unit reel Use MMFT960T3 to order the 13 inch/4000 unit reel
MMFT960T1
MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS(on) = 1.7 OHM MAX
4 1
2 3

Rating DraintoSource Voltage GatetoSource Voltage NonRepetitive Drain Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 60 30 300 0.8 6.4 65 to 150 Unit Volts Volts mAdc Watts mW/C C
DEVICE MARKING
FT960
REV 3
479
MMFT960T1
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 60 10 50 Vdc Adc nAdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.0 A) DraintoSource OnVoltage (VGS = 10 V, ID = 0.5 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance (VDS = 25 V, ID = 0.5 A) VGS(th) RDS(on) VDS(on) gfs 600 0.8 1.7 mmhos 1.0 3.5 1.7 Vdc Ohms Vdc
Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge GateSource Charge GateDrain Charge 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (VGS = 10 V, ID = 1.0 A, V 10A VDS = 48 V) (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss Qg Qgs Qgd 65 33 7.0 3.2 1.2 2.0 nC pF

5 TJ = 25C VGS = 10 V 3 8V 7V 2 6V 5V 4V 0 0 4 6 8 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 2 10 0 0 2 4 6 8 VGS, GATETOSOURCE VOLTAGE (VOLTS) 10 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 4 0.8 1 TJ = 25C TJ = 55C TJ = 125C 0.6
0.4 VDS = 10 V 0.2
480
MMFT960T1
5 VGS = 10 V 4
10 ID = 1 A VGS = 10 V
3 TJ = 125C 2 25C 1 55C 0 0 0.5 1 1.5 2 ID, DRAIN CURRENT (AMPS) 2.5
0.1 75
50
125
150
250 225 I D, DRAIN CURRENT (AMPS) 200 C, CAPACITANCE (pF) 1 175 150 125 100 75 50 25 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS) 0 0 5 Crss 10 15 20 25 VDS, DRAINSOURCE VOLTAGE (VOLTS) 30 Coss Ciss VGS = 0 V f = 1 MHz TJ = 25C
TJ = 125C 0.1
TJ = 25C
10 ID = 1 A TJ = 25C gFS , TRANSCONDUCTANCE (mhos) 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 Qg, TOTAL GATE CHARGE (nC) 3.5 4 VDS = 30 V VDS = 48 V
2 VDS = 10 V 1.5
1 TJ = 55C 0.5 125C 0 25C
0.5
1 1.5 ID, DRAIN CURRENT (AMPS)
2.5
481
MOTOROLA

NChannel Enhancement Mode Silicon Gate TMOS EFET SOT223 for Surface Mount
This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds High Voltage 240 Vdc Low Drive Requirement The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use MMFT2406T1 to order the 7 inch/1000 unit reel. Use MMFT2406T3 to order the 13 inch/4000 unit reel.
D
MMFT2406T1
MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS(on) = 6.0 OHM
4 1
2 3
G S

Rating DraintoSource Voltage GatetoSource Voltage Continuous Drain Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 240 20 700 1.5 12 65 to 150 Unit Vdc Vdc mAdc Watts mW/C C
DEVICE MARKING
T2406
Thermal Resistance JunctiontoAmbient (surface mounted)(1) Lead Temperature for Soldering Purposes, 1/16 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
REV 1
482
MMFT2406T1
OFF CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 2.5 Vdc, ID = 0.1 Adc) (VGS = 10 Vdc, ID = 0.5 Adc) DraintoSource OnVoltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 6.0 V, ID = 0.5 A) VGS(th) RDS(on) VDS(on) gFS 300 10 6.0 3.0 Vdc mmhos 0.8 2.0 Vdc Ohms
Input Capacitance Output Capacitance Transfer Capacitance 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss 125 50 20 pF
483
MOTOROLA

This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dcdc converters, solenoid and relay drivers. The device is housed in the SOT223 package which is designed for medium power surface mount applications. Silicon Gate for Fast Switching Speeds RDS(on) = 4.0 Ohm Max Low Drive Requirement, VGS = 2.0 Volts Max The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 12 mm Tape and Reel Use MMFT6661T1 to order the 7 inch/1000 unit reel Use MMFT6661T3 to order the 13 inch/4000 unit reel
MMFT6661T1
MEDIUM POWER TMOS FET 500 mA 90 VOLTS RDS(on) = 4.0 OHM MAX
4 1
2 3

Rating DraintoSource Voltage GatetoSource Voltage NonRepetitive Drain Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Symbol VDS VGS ID PD TJ, Tstg Value 90 30 500 0.8 6.4 65 to 150 Unit Vdc Vdc mAdc Watts mW/C C
DEVICE MARKING
T6661
1. Device mounted on FR4 glass epoxy printed circuit board using minimum recommended footprint.
REV 4
484
MMFT6661T1
OFF CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.0 Adc) DraintoSource OnVoltage (VGS = 10 V, ID = 1.0 A) (VGS = 5.0 V, ID = 0.3 A) Forward Transconductance (VDS = 25 V, ID = 0.5 A) VGS(th) RDS(on) VDS(on) gFS 200 4.0 1.6 mmhos 0.8 2.0 4.0 Vdc Ohms Vdc
Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge GateSource Charge GateDrain Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% (VGS = 10 V, ID = 1.0 A, V 10A VDS = 72 V) (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss Qg Qgs Qgd 36 16 6.0 1.7 0.34 0.23 nC pF

3 2.5 2 1.5 1 4V 0.5 0 0 4 6 8 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 2 10 TJ = 25C 7V VGS = 10 V 6V 5V 8V I D, DRAIN CURRENT (AMPS) 1.2 1.5 VDS = 10 V TJ = 55C 25C 125C
0.9
0.6
0.3
485
MMFT6661T1
7 6 VGS = 10 V TJ = 125C
10 ID = 1 A VGS = 10 V
25C 2 55C 0 0 0.3 0.6 0.9 ID, DRAIN CURRENT (AMPS) 1.2 1.5
0.1 75
50
125
150
10
100 90 VGS = 0 V f = 1 MHz TJ = 25C
80 C, CAPACITANCE (pF) 1 70 60 50 40 30 20 10 0.01 0 0.5 1 1.5 VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS) 2 0 0 5 Crss Coss Ciss
TJ = 125C 0.1
TJ = 25C
10 15 20 25 VDS, DRAINSOURCE VOLTAGE (VOLTS)
30
Figure 6. Capacitance versus DrainSource Voltage
10 gFS , TRANSCONDUCTANCE (mhos) ID = 1 A TJ = 25C VDS = 72 V 6
1 VDS = 10 V 0.8
0.6 TJ = 55C 0.4 25C 125C 0.2
0.2
0.4
0.6 0.8 1 1.2 1.4 Qg, TOTAL GATE CHARGE (nC)
1.6
1.8
0.3
0.6 0.9 ID, DRAIN CURRENT (AMPS)
1.2
1.5
486
MOTOROLA
TMOS Switching
2 GATE
MPF910
3 DRAIN
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C MPF910 Total Device Dissipation @ TC = 25C Derate above 25C MFE910 Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD PD TJ, Tstg Value 60 20 40 0.5 1.0 1.0 8.0 6.25 50 65 to +150 Unit Vdc Vdc Vpk Adc Watts mW/C Watts mW/C C
1 2 3

OFF CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 40 V, VGS = 0) Gate Reverse Current (VGS = 10 V, VDS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 100 A) IDSS IGSS V(BR)DSS 60 0.1 0.01 90 10 10 Adc nAdc Vdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) DrainSource OnVoltage (VGS = 10 V, ID = 500 mA) OnState Drain Current (VDS = 25 V, VGS = 10 V) Forward Transconductance (VDS = 15 V, ID = 500 mA) VGS(th) VDS(on) ID(on) gfs 0.3 500 100 1.5 2.5 2.5 Vdc Vdc mA mmhos
REV 1
487
MPF910
RESISTIVE SWITCHING
+25 V 23
Pulse Generator To Sampling Scope 50 Input
Vin 40 pF 50 1.0 M
20 dB 50 Attenuator
Vout
50
ton 90% Output Vout Inverted 50% Input Vin 10% Pulse Width
toff 90% 10% 90% 50%
10 v
2.0 V GS(th) , THRESHOLD VOLTAGE 1.6 1.2 0.8 0.4 0 50

VDS = VGS ID = 1.0 mA
2.0 I D(on), DRAIN CURRENT (AMPS)

VGS = 10 V
1.6 1.2 0.8 0.4
9.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V
100 0 50 TJ, JUNCTION TEMPERATURE
150 (C)
1.0 2.0 3.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS)
4.0
488
MPF910
2.0 I D(on), DRAIN CURRENT (AMPS) 1.6 1.2
7.0 V VGS = 10 V
100 80 60 40
Ciss VGS = 10 V
8.0 V
0.8 0.4
6.0 V 5.0 V 4.0 V
C, CAPACITANCE (pF)
9.0 V
20
Coss Crss
20 10 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS)
40
40 50 60 10 20 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus DraintoSource Voltage
V DS , DRAINSOURCE VOLTAGE (VOLTS)
10 5.0
VGS = 10 V
ID = 1.5 A 1.0 A 0.5 A
1.0 0.5 0.4 0.3 0.2 0.1 50 30 10 10 30 50 70 90 110 130 150 TJ, JUNCTION TEMPERATURE
489
MOTOROLA
TMOS Switching
2 GATE
3 DRAIN
MPF930 MPF960 MPF990
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.0 8.0 TJ, Tstg JA 55 to 150 125 Watts mW/C C C/W MPF930 35 35 MPF960 60 60 20 40 2.0 3.0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc
1 2 3

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) V(BR)DSX MPF930 MPF960 MPF990 IGSS 35 60 90 50 nAdc Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ZeroGateVoltage Drain Current (VDS = Maximum Rating, VGS = 0) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 0.5 Adc) MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 IDSS VGS(Th) VDS(on) 0.4 0.6 0.6 0.9 1.2 1.2 2.2 2.8 2.8 0.7 0.8 1.2 1.4 1.7 2.4 3.0 3.5 4.8 1.0 10 3.5 Adc Vdc Vdc
(ID = 1.0 Adc)
(ID = 2.0 Adc)
REV 2
490

Static DrainSource On Resistance (VGS = 10 Vdc, ID = 1.0 Adc) rDS(on) MPF930 MPF960 MPF990 ID(on) 1.0 0.9 1.2 1.2 2.0 1.4 1.7 2.0 Amps
OnState Drain Current (VDS = 25 Vdc, VGS = 10 Vdc)

Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance (VDS = 25 Vdc, ID = 0.5 Adc) Ciss Crss Coss gfs 200 70 20 49 380 pF pF pF mmhos
TurnOn Time TurnOff Time 2. Pulse Test: Pulse Width ton 7.0 7.0 15 15 ns ns toff
v 300 s, Duty Cycle v 2.0%.
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50%
OUTPUT V INVERTED out
491

V DS , DRAINSOURCE VOLTAGE (VOLTS) 10 5.0 C, CAPACITANCE (pF) VGS = 10 V 2.0 1.0 0.5 0.2 0.1 55 200 180 160 140 120 100 80 60 40 20 35 15 85 105 +5.0 25 45 65 TJ, JUNCTION TEMPERATURE (C) 125 145 0 0 5.0 10 20 30 40 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 50 Crss Ciss Coss VGS = 0 V
2.4 ID(on), DRAIN CURRENT (AMPS) ID(on), DRAIN CURRENT (AMPS) 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 1.0 6.0 7.0 8.0 2.0 3.0 4.0 5.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 VDS = 10 V
2.8 VGS = 10 V 2.4 9.0 V 2.0 1.6 7.0 V 1.2 6.0 V 0.8 5.0 V 0.4 0 0 5.0 10 20 30 40 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 4.0 V 50 8.0 V
Figure 5. Transfer Characteristic
Figure 6. Output Characteristic
2.8 ID(on), DRAIN CURRENT (AMPS) 2.4 2.0 1.6
VGS = 10 V 9.0 V 8.0 V 7.0 V
1.2 6.0 V 0.8 5.0 V 0.4 0.2 0 0.5 1.0 2.0 3.0 4.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 4.0 V 3.0 V 5.0
Figure 7. Saturation Characteristic
492
MOTOROLA
TMOS FET Transistors

MPF6659 MPF6660 MPF6661
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TC = 25C Derate above 25C Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDS VDG VGS VGSM ID IDM PD 2.5 20 PD 1.0 8.0 TJ, Tstg 55 to +150 Watts mW/C C Watts mW/C MPF6659 35 35 MPF6660 60 60 20 40 2.0 3.0 MPF6661 90 90 Unit Vdc Vdc Vdc Vpk Adc
1 2 3

OFF CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = Maximum Rating, VGS = 0) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) MPF6659 MPF6660 MPF6661 IDSS IGSS V(BR)DSX 35 60 90 10 100 Adc nAdc Vdc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 1.0 Adc) MPF6659 MPF6660 MPF6661 MPF6659 MPF6660 MPF6661 VGS(Th) VDS(on) 0.8 0.9 0.9 1.8 3.0 4.0 1.5 1.5 1.6 0.8 1.4 2.0 Vdc Vdc
(VGS = 5.0 Vdc, ID = 0.3 Adc)
REV 2
493
MPF6659 MPF6660 MPF6661

Static DrainSource On Resistance (VGS = 10 Vdc, ID = 1.0 Adc) rDS(on) MPF6659 MPF6660 MPF6661 ID(on) 1.0 2.0 1.8 3.0 4.0 Amps
OnState Drain Current (VDS = 25 Vdc, VGS = 10 Vdc)

Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance (VDS = 25 Vdc, ID = 0.5 Adc) Ciss Crss Coss gfs 170 30 3.6 20 pF pF pF mmhos
Rise Time Fall Time TurnOn Time TurnOff Time 2. Pulse Test: Pulse Width tr tf ton 5.0 5.0 5.0 5.0 ns ns ns ns
toff
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR 50 Vin 40 pF 50 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 50% INPUT Vin 10% PULSE WIDTH 50% 10 V
1.0 M
OUTPUT V INVERTED out
494
MPF6659 MPF6660 MPF6661

2.0 V GS(th), THRESHOLD VOLTAGE 1.6 VDS = VGS ID = 1.0 mA I D(on) , DRAIN CURRENT (AMPS) 2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V 0 50 0 100 50 TJ, JUNCTION TEMPERATURE 150C 0 1.0 2.0 3.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 4.0
1.2
0.8
0.8
0.4
100
1.6
80
VGS = 0 V
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 40
60
40 Ciss 20 Coss Crss 0 10 40 50 60 20 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS)
V DS , DRAINSOURCE VOLTAGE (VOLTS)
10 5.0 VGS = 10 V
ID = 1.5 A 1.0 A 0.5 A
1.0 0.5 0.4 0.3 0.2 0.1 50
30
10
130
150
Figure 7. OnVoltage versus Temperature
495
MOTOROLA
TMOS FET Transistor

2 GATE
3 DRAIN
VN0300L
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 200 500 350 2.8 Unit V V Vdc Vpk mA mA mW mW/C C
1 2 3
Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C

Drain Source Breakdown Voltage (VDS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125C) GateBody Leakage (VDS = 0, VGS = 30 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current(1) (VDS = VGS, ID = 1.0 mA) DrainSource On Resistance(1) (VGS = 5.0 V, ID = 0.3 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 ms, Duty Cycle V(BR)DSS IDSS IGSS VGS(th) ID(on) rDS(on) gfs 200 3.3 1.2 mS 0.8 1.0 10 500 100 2.5 nA V A 30 V A
v 2.0%.
REV 1
496
VN0300L
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 100 95 25 pF pF pF
TurnOn Time TurnOff Time ( (VDD = 25 Vdc, ID = 1.0 A, RL = 24 , RG = 25 ) ton toff 30 30 ns ns
497
MOTOROLA
TMOS FET Transistor

3 DRAIN 2 GATE
VN0610LL
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage (RGS = 1 M) Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 190 1000 400 3.2 55 to +150 mW mW/C C Unit Vdc Vdc Vdc Vpk mAdc
1 2 3
Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C

OFF CHARACTERISTICS
Drain Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) GateBody Leakage Current, Forward (VGSF = 30 V, VDS = 0) V(BR)DSS IDSS IGSSF 10 500 100 nAdc 60 Vdc Adc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static DrainSource OnResistance (VGS = 10 V, ID = 500 mA) (VGS = 10 V, ID = 500 mA, TC = 125C) DrainSource OnVoltage (VGS = 5.0 V, ID = 200 mA) (VGS = 10 V, ID = 500 mA) OnState Drain Current (VGS = 10 V, VDS 2.0 VDS(on)) Forward Transconductance (VDS 2.0 VDS(on), ID = 500 mA) 1. Pulse Test: Pulse Width VGS(th) rDS(on) VDS(on) ID(on) gfs 750 100 1.5 2.5 mAdc mhos 5.0 9.0 Vdc 0.8 2.5 Vdc
REV 1
498
VN0610LL
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 60 25 5.0 pF
TurnOn Delay Time TurnOff Delay Time 1. Pulse Test: Pulse Width ( (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 , RL = 23 ) ton toff 10 10 ns
v 300 ms, Duty Cycle v 10%.
499
VN0610LL
RESISTIVE SWITCHING
+25 V ton 125 40 pF 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplititude 10 Volts) Vin PULSE WIDTH toff
Vin PULSE GENERATOR 50
90% 10% 90% 50%
2.0 VGS(th), THRESHOLD VOLTAGE I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA
2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V
1.6
1.2
0.8
0.8
0.4 0 50
100 0 50 TJ, JUNCTION TEMPERATURE (C)
150
1.0 2.0 3.0 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS)
4.0
100 VGS = 0 V
1.6
80
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS) 40
60
40 Ciss 20 Coss Crss 0 10 20 30 40 50 60 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS)
4100
MOTOROLA
TMOS FET Transistor

3 DRAIN 2 GATE
VN10LM
1 SOURCE
1 2 3
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VGS VGSM ID IDM PD TJ, Tstg Value 60 20 40 0.3 1.0 1.0 8.0 40 to +150 Unit Vdc Vdc Vpk Adc Watts mW/C C

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 A) ZeroGateVoltage Drain Current (VDS = 45 V, VGS = 0) GateBody Leakage Current (VGS = 15 V, VDS = 0) GateBody Leakage Current (VGS = 15 V, VDS = 0) V(BR)DSS IDSS IGSS1 IGSS2 60 0.1 10 100 100 Vdc Adc nAdc nAdc
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width 300 s, Duty Cycle.
REV 1
4101
VN10LM
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current (VDS = 15 V, VGS = 10 V) Forward Transconductance (VDS = 15 V, ID = 500 mA) DrainSource OnVoltage (VGS = 5.0 V, ID = 200 mA) DrainSource OnVoltage (VGS = 10 V, ID = 500 mA) DrainSource OnResistance (VGS = 5.0 V, ID = 200 mA) DrainSource OnResistance (VGS = 10 V, ID = 500 mA) Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) TurnOn Time (VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V) TurnOff Time (VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V) VGS(th) ID(on) gfs VDS(on)1 VDS(on)2 rDS(on)1 rDS(on)2 Ciss Coss Crss ton toff 0.8 750 200 2.5 1.5 2.5 7.5 5.0 60 25 5.0 10 10 Vdc mA mmhos Vdc Vdc pF pF pF ns ns
4102
MOTOROLA
TMOS FET Transistor

3 DRAIN 2 GATE
VN2222LL
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 150 1000 400 3.2 55 to +150 mW mW/C C Unit Vdc Vdc Vdc Vpk mAdc CASE 2904, STYLE 22 TO92 (TO226AA)
1 2 3
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C

OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) GateBody Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) V(BR)DSS IDSS IGSSF 10 500 100 nAdc 60 Vdc Adc
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125C) 1. Pulse Test: Pulse Width VGS(th) rDS(on) 7.5 13.5 0.6 2.5 Vdc
REV 1
4103
VN2222LL
DrainSource OnVoltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) OnState Drain Current (VGS = 10 Vdc, VDS 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc) VDS(on) ID(on) gfs 750 100 1.5 3.75 mA mhos Vdc
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 60 25 5.0 pF
TurnOn Delay Time TurnOff Delay Time 1. Pulse Test: Pulse Width ( (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 , RL = 23 ) ton toff 10 10 ns
4104
VN2222LL
2 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 7V 6V 5V 4V 3V 10 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN SOURCE VOLTAGE (VOLTS) VGS, GATE SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 0.8 VDS = 10 V 55C 125C 1 25C
0.6 0.4
0.2

r DS(on) , STATIC DRAINSOURCE ONRESISTANCE (NORMALIZED) VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 60 20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA
1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 60 20 0 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1 mA
4105
MOTOROLA
TMOS FET Transistor

2 GATE
3 DRAIN
VN2406L
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 240 60 20 40 200 500 350 2.8 Unit Vdc Vdc Vdc Vpk mAdc mAdc mW mW/C C
1 2 3

Drain Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125C) Gate Body Leakage (VDS = 0, VGS = 15 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current(1) (VGS = 10 V, VDS 2.0 VDS(on)) DrainSource On Resistance(1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 s, Duty Cycle V(BR)DSS IDSS IGSS VGS(th) ID(on) rDS(on) gfs 300 10 6.0 mS 0.8 1.0 10 500 100 2.0 nAdc Vdc Adc 240 Vdc Adc
v 2.0%.
REV 1
4106
VN2406L
TurnOn Time (VDD = 60 Vdc, ID = 0.4 A, Vd 04A RL = 150 , RG = 25 ) TurnOff Time t(on) t(r) t(off) t(f) 8.0 8.0 23 34 ns ns ns ns
4107
MOTOROLA
TMOS FET Transistor

2 GATE
3 DRAIN
VN2410L
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 240 60 20 40 200 500 350 2.8 Unit Vdc Vdc Vdc Vpk mAdc mAdc mW mW/C C
1 2 3

Drain Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125C) Gate Body Leakage (VDS = 0, VGS = 15 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current(1) (VGS = 10 V, VDS 2.0 VDS(on)) DrainSource On Resistance(1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 s, Duty Cycle V(BR)DSS IDSS IGSS VGS(th) ID(on) rDS(on) gfs 300 10 10 mS 0.8 1.0 10 500 100 2.0 nAdc Vdc Adc 240 Vdc Adc
v 2.0%.
REV 1
4108
VN2410L
TurnOn Time (VDD = 60 Vdc, ID = 0.4 A, Vd 04A RL = 150 , RG = 25 ) TurnOff Time t(on) t(r) t(off) t(f) 8.0 8.0 23 34 ns ns ns ns
4109
MOTOROLA
JFETs
NChannel Depletion
General Purpose
1 DRAIN 3 GATE
2N5457
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Reverse Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Channel Temperature Range Symbol VDS VDG VGSR IG PD TJ Tstg Value 25 25 25 10 310 2.82 125 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 100 mAdc) V(BR)GSS IGSS VGS(off) VGS 0.5 2.5 1.0 200 6.0 Vdc Vdc 25 Vdc nAdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (1) (VDS = 15 Vdc, VGS = 0) IDSS 1.0 3.0 5.0 mAdc

Forward Transfer Admittance Common Source (1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance Common Source (1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 1. Pulse Test; Pulse Width yfs yos Ciss Crss 1000 10 4.5 1.5 5000 50 7.0 3.0
mmhos mmhos
pF pF
4110
2N5457
5 VDS = 15 V VGS = 0 RS = 1 MW
14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 VDS = 15 V VGS = 0 f = 1 kHz
0.01
0.1
1.0 f, FREQUENCY (kHz)
10
100
0.001
0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms)
10
Figure 1. Noise Figure versus Frequency
Figure 2. Noise Figure versus Source Resistance

1.2
1.2 VGS(off) 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0
^ 1.2 V
VGS = 0 V 1.0 0.2 V I D , DRAIN CURRENT (mA) 0.8
VGS(off)
^ 1.2 V
VDS = 15 V
0.4 V 0.6 V 0.8 V 1.0 V 0 10 15 20 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 5 25
0.6 0.4 0.2 0 1.2
0.8 0.4 VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Transfer Characteristics
4111
2N5457
5 VGS = 0 V I D , DRAIN CURRENT (mA) I D , DRAIN CURRENT (mA) 4 VGS(off) 3
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
2 2 V 3 V 0 0 10 15 20 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 5 25
0 5
3 2 1 4 VGS, GATE SOURCE VOLTAGE (VOLTS)

10
10
I D , DRAIN CURRENT (mA)
1 V 6 2 V 4 3 V 2 4 V 5 V 0 0 10 15 20 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 5 25
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
5 4 3 2 1 VGS, GATE SOURCE VOLTAGE (VOLTS)
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4112
MOTOROLA
JFET Amplifiers
PChannel Depletion
3 GATE
2 DRAIN
2N5460 2N5461 2N5462
1 SOURCE
MAXIMUM RATINGS
Rating Drain Gate Voltage Reverse Gate Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 65 to +135 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) (VGS = 30 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) 0.75 1.0 1.8 0.5 0.8 1.5 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc Adc Vdc 40 Vdc
VGS
Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS 1.0 2.0 4.0 5.0 9.0 16 mAdc

Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 yfs 1000 1500 2000 5.0 1.0 4000 5000 6000 75 7.0 2.0
mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
yos Ciss Crss NF en
mmhos
pF pF
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) Equivalent ShortCircuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) 1.0 60 2.5 115 dB
nV
Hz
4113
2N5460 2N5461 2N5462

DRAIN CURRENT versus GATE SOURCE VOLTAGE
4.0 3.5 I D, DRAIN CURRENT (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATESOURCE VOLTAGE (VOLTS) 1.8 2.0 TA = 55C 25C 125C VDS = 15 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 4000 3000 2000
FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT
1000 700 500 300 200 0.2 0.3 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0
Figure 1. VGS(off) = 2.0 Volts

Yfs FORWARD TRANSFER ADMITTANCE (m mhos)
10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATESOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = 55C 25C 125C VDS = 15 V
10000 7000 5000 3000 2000
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 VDS = 15 V f = 1.0 kHz 7.0

16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = 55C 25C 125C VDS = 15 V
10000 7000 5000 3000 2000
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10
4114
2N5460 2N5461 2N5462

r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 300 200 IDSS = 3.0 mA 100 70 50 30 20 10 0.1 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 6.0 mA 10 mA 10 VDS = 15 V f = 1.0 kHz C, CAPACITANCE (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Coss Crss 10 20 30 VDS, DRAINSOURCE VOLTAGE (VOLTS) 40 Ciss f = 1.0 MHz VGS = 0
Figure 7. Output Resistance versus Drain Current
5.0 VDS = 15 V VGS = 0 RG = 1.0 Megohm
10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VDS = 15 V VGS = 0 f = 100 Hz
4.0
3.0
2.0
1.0
0 10
20 30 50
100 200 300 500 1000 2000 3000 f, FREQUENCY (Hz)
10,000
0 1.0
10 100 1000 RS, SOURCE RESISTANCE (k Ohms)
10,000
vi Crss Ciss ross Coss | yfs | vi
COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = j Crss
* Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Figure 11. Equivalent Low Frequency Circuit
4115
MOTOROLA

JFET VHF/UHF Amplifiers
NChannel Depletion
3 GATE
1 DRAIN
2N5484 2N5486
2 SOURCE
MAXIMUM RATINGS
Rating Drain Gate Voltage Reverse Gate Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDG VGSR ID IG(f) PD TJ, Tstg Value 25 25 30 10 350 2.8 65 to +150 Unit Vdc Vdc mAdc mAdc mW mW/C C
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) 2N5484 2N5486 V(BR)GSS IGSS VGS(off) 0.3 2.0 3.0 6.0 1.0 0.2 nAdc Adc Vdc 25 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) 2N5484 2N5486 IDSS 1.0 8.0 5.0 20 mAdc

Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, f = 400 MHz) yfs 2N5484 2N5486 Re(yis) 2N5484 2N5486 yos 2N5484 2N5486 Re(yos) 2N5484 2N5486 Re(yfs) 2N5484 2N5486 2500 3500 75 100 50 75 100 1000 3000 4000 6000 8000
mmhos
mmhos
mmhos
mmhos
mmhos
4116
2N5484 2N5486
SMALL SIGNAL CHARACTERISTICS (continued)

Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss Crss Coss 5.0 1.0 2.0 pF pF pF
Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 1.0 kHz) (VDS = 15 Vdc, ID = 1.0 mAdc, RG 1.0 k, f = 100 MHz) (VDS = 15 Vdc, ID = 1.0 mAdc, RG 1.0 k, f = 200 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, RG 1.0 k, f = 100 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, RG 1.0 k, f = 400 MHz) Common Source Power Gain (VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz) (VDS = 15 Vdc, ID = 1.0 mAdc, f = 200 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, f = 100 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, f = 400 MHz) NF 2N5484 2N5484 2N5486 2N5486 Gps 2N5484 2N5484 2N5486 2N5486 16 18 10 14 25 30 20 4.0 2.5 3.0 2.0 4.0 dB dB
POWER GAIN
24 f = 100 MHz
20 PG , POWER GAIN (dB)
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
Figure 1. Effects of Drain Current
4117
2N5484 2N5486
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
Adjust VGS for ID = 50 mA VGS < 0 Volts *L1
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
6.0 f = 400 MHz 4.0
4.5 f = 400 MHz 3.5
2.0 0 0
100 MHz 2.0 16 4.0 6.0 8.0 10 12 14 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
2.5 1.5 0 2.0
100 MHz
4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA)
12
14
Figure 3. Effects of DrainSource Voltage
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
80 60 40 20 Pin, INPUT POWER PER TONE (dB)
+ 20
Figure 5. Third Order Intermodulation Distortion
4118
2N5484 2N5486
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos)
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
Figure 6. Input Admittance (yis)
Figure 7. Reverse Transfer Admittance (yrs)
gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos)
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
gfs @ IDSS gfs @ 0.25 IDSS
Figure 8. Forward Transadmittance (yfs)
Figure 9. Output Admittance (yos)
4119
2N5484 2N5486
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
ID = 0.25 IDSS 200 300
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 10. S11s

30 40 20 10 0 350 340 330 320 40 30 20
Figure 11. S12s

10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
300 0.7 290 280 270 260 250 240
0.6
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 12. S21s 4120
Figure 13. S22s Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N5484 2N5486
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
gig @ IDSS grg @ 0.25 IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
Figure 14. Input Admittance (yig)
Figure 15. Reverse Transfer Admittance (yrg)
gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos)
gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos)
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
gfg @ IDSS gfg @ 0.25 IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
bog @ IDSS, 0.25 IDSS
gog @ IDSS
brg @ 0.25 IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
Figure 16. Forward Transfer Admittance (yfg)
Figure 17. Output Admittance (yog)
4121
2N5484 2N5486
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
140 150 160 170 180 190 200 210
220
140 150 160 170
0.04 180 190 200 210
220
Figure 18. S11g
Figure 19. S12g
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
0 1.5 1.0 100
350 300 200 400
340 500 700 600 800
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
ID = IDSS, 0.25 IDSS 0.8
300 0.7 290 280 270 260 250 240
0.6
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 20. S21g 4122
Figure 21. S22g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
JFET Switching
NChannel Depletion
3 GATE
1 DRAIN
2N5555
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.8 65 to +150 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100C) V(BR)GSS IGSS ID(off) 25 1.0 10 2.0 Vdc nAdc nAdc Adc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) GateSource Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) DrainSource OnVoltage (ID = 7.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 0.1 mAdc, VGS = 0) IDSS VGS(f) VDS(on) rDS(on) 15 1.0 1.5 150 mAdc Vdc Vdc Ohms

SmallSignal DrainSource ON Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) rds(on) Ciss Crss 150 5.0 1.2 Ohms pF pF
TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( ) VGS(on) = 0 VGS(off) = 10 Vdc) (See Figure 1) 0, 10 Vd ) (S Fi (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( ) VGS(on) = 0 VGS(off) = 10 Vdc) (See Figure 1) 0, 10 Vd ) (S Fi td(on) tr td(off) tf 5.0 5.0 15 10 ns ns ns ns
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%.
4123
2N5555
PULSE WIDTH VDD 1.0 k 10 k PULSE GENERATOR (50 OHMS) 50 OHM COAXIAL CABLE 1.0 k 50 Rin = 50 OHMS td(on) OUTPUT INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF ON PULSE WIDTH = 400 ns DUTY CYCLE 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS 10% 90% tr 90% tf td(off) 10% 50 OHM COAXIAL CABLE TEKTRONIX 567 SAMPLING SCOPE INPUT 50% 10% 90% 90% 50% 10% VGS(on)
VGS(off)
INPUT PULSE RISE TIME
INPUT PULSE FALL TIME
Figure 1. Switching Times Test Circuit
POWER GAIN
24 f = 100 MHz
16
12
8.0 4.0
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3
VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
*L2 *L3
**L2 **L3
4124
2N5555
NOISE FIGURE
(Tchannel = 25C)
6.0 f = 400 MHz 4.0
4.5 f = 400 MHz 3.5
2.0 0 0
100 MHz 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
2.5 1.5 0 2.0
100 MHz
12
14
+ 20
4125
2N5555
gis @ IDSS
4126
2N5555
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
ID = 0.25 IDSS 200 300
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 11. S11s

30 40 20 10 0 350 340 330 320 40 30 20
Figure 12. S12s

10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
300 0.7 290 280 270 260 250 240
0.6
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
2N5555
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
brg @ 0.25 IDSS
4128
2N5555
140 150 160 170 180 190 200 210
220
140 150 160 170
0.04 180 190 200 210
220
Figure 19. S11g
Figure 20. S12g
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
0 1.5 1.0 100
350 300 200 400
340 500 700 600 800
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
300 0.7 290 280 270 260 250 240
0.6
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MOTOROLA
JFETs Switching
NChannel Depletion
2N5640
1 DRAIN
3 GATE 2 SOURCE
1 2 3
Rating DrainSource Voltage DrainGate Voltage Reverse GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction Temperature Range Storage Temperature Range
Symbol VDS VDG VGSR IGF PD RqJA TJ Tstg
Value 30 30 30 10 350 2.8 357 65 to +150 65 to +150
Unit Vdc Vdc Vdc mAdc mW mW/C C/W C C

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Drain Cutoff Current (VDS = 15 Vdc, VGS = 6.0 Vdc) (VDS = 15 Vdc, VGS = 6.0 Vdc, TA = 100C) V(BR)GSS IGSS ID(off) 1.0 1.0 nAdc Adc 1.0 1.0 nAdc Adc 30 Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 20 Vdc, VGS = 0) DrainSource OnVoltage (ID = 3.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 1.0 mAdc, VGS = 0) 1. Pulse Test: Pulse Width IDSS VDS(on) rDS(on) 5.0 0.5 100 mAdc Vdc Ohms
REV 1
4130
2N5640
Static DrainSource ON Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 0, VGS = 12 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 12 Vdc, f = 1.0 MHz) rds(on) Ciss Crss 100 10 4.0 Ohms pF pF
TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time VDD = 10 Vdc Vdc, VGS(on) = 0, VGS(off) = 10 Vdc, RG = 50 ID(on) = 3.0 mAdc ID(on) = 3.0 mAdc ID(on) = 3.0 mAdc ID(on) = 3.0 mAdc td(on) tr td(off) tf 8.0 10 15 30 ns ns ns ns
4131
2N5640
TYPICAL SWITCHING CHARACTERISTICS
1000 t d(on), TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C VGS(off) = 12 V
TJ = 25C VGS(off) = 12 V
Figure 1. TurnOn Delay Time
Figure 2. Rise Time
1000 t d(off) , TURNOFF DELAY TIME (ns) 500 200 RK = RD t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 TJ = 25C VGS(off) = 12 V
1000 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C VGS(off) = 12 V
Figure 3. TurnOff Delay Time
Figure 4. Fall Time
NOTE 1
+VDD RD SET VDS(off) = 10 V INPUT RGEN 50 50 VGEN RK RGG VGG RT OUTPUT 50
INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0%
RGG
& RK
RD
(R ) 50) + RRD) TRT ) 50 D
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R D ) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
4132
2N5640
y fs, FORWARD TRANSFER ADMITTANCE (mmhos) 20 15 10 10 7.0 5.0 Tchannel = 25C VDS = 15 V C, CAPACITANCE (pF) Cgs 7.0 5.0 Cgd
3.0 2.0 0.5 0.7
3.0 2.0 1.5
Tchannel = 25C (Cds IS NEGLIGIBLE)
1.0
2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)
20
30
50
1.0 0.03 0.05 0.1
0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS)
10
30
Figure 6. Typical Forward Transfer Admittance
Figure 7. Typical Capacitance
200 rds(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS)
rds(on), DRAINSOURCE ONSTATE RESISTANCE (NORMALIZED)
IDSS = 10 160 mA
25 mA
50 mA
75 mA 100 mA
125 mA
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 70 40 10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C) 140 170 ID = 1.0 mA VGS = 0
120
80 Tchannel = 25C
40
1.0
2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS)
7.0
8.0
Figure 8. Effect of GateSource Voltage On DrainSource Resistance
Figure 9. Effect of Temperature On DrainSource OnState Resistance
100 rds(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS) 90 80 70 60 50 40 30 20 10
9.0 8.0
Tchannel = 25C
10 NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off) and DrainSource On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number.
rDS(on) @ VGS = 0 VGS(off)
7.0 6.0 5.0 4.0 3.0 2.0 1.0
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATEVOLTAGE DRAIN CURRENT (mA)
Figure 10. Effect of IDSS On DrainSource Resistance and GateSource Voltage
4133
MOTOROLA
JFET Amplifiers
NChannel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
Characteristic Total Device Dissipation(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2

OFF CHARACTERISTICS
Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage (VGS = 10 Vdc, VDS = 0) (ID = 0.5 nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS 0.7 0.2 5.0 2.5 3.0 1.3 4.0 2.0 nAdc Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
4134
BFR30LT1 BFR31LT1
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc

Forward Transconductance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 kHz) Output Admittance (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 kHz) (ID = 200 mAdc, VDS = 10 Vdc) Input Capacitance Reverse Transfer Capacitance yfs BFR30 BFR31 BFR30 BFR31 yos BFR30 BFR31 Ciss Crss 40 20 25 15 5.0 4.0 1.5 1.5 pF pF 1.0 1.5 0.5 0.75 4.0 4.5 mAdc
mAdc
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
4135
BFR30LT1 BFR31LT1
5 VDS = 15 V VGS = 0 RS = 1 MW
0.01
0.1
10
100
0.001
10

1.2
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
0.6 0.4 0.2 0 1.2
4136
BFR30LT1 BFR31LT1
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5

10
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
4137
MOTOROLA
JFET Chopper Transistor

NChannel Depletion
1 DRAIN 3 GATE
J112
2 SOURCE
MAXIMUM RATINGS
Rating Drain Gate Voltage Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value 35 35 50 350 2.8 300 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C CASE 2904, STYLE 5 TO92 (TO226AA)
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc) Gate Reverse Current (VGS = 15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current (VDS = 5.0 Vdc, VGS = 10 Vdc) V(BR)GSS IGSS VGS(off) ID(off) 35 1.0 1.0 5.0 1.0 Vdc nAdc Vdc nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 15 Vdc) Static DrainSource On Resistance (VDS = 0.1 Vdc) Drain Gate and Source Gate OnCapacitance (VDS = VGS = 0, f = 1.0 MHz) Drain Gate OffCapacitance (VGS = 10 Vdc, f = 1.0 MHz) Source Gate OffCapacitance (VGS = 10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 s, Duty Cycle = 3.0%. IDSS rDS(on) Cdg(on) + Csg(on) Cdg(off) Csg(off) 5.0 50 28 mAdc pF
5.0 5.0
pF pF
(Replaces J111/D)
4138
J112
1000 t d(on), TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 RK = 0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = RD TJ = 25C VGS(off) = 7.0 V t r , RISE TIME (ns) 1000 500 200 100 50 20 10 5.0 RK = 0 RK = RD TJ = 25C VGS(off) = 7.0 V
Figure 2. Rise Time
1000 t d(off) , TURNOFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) RK = 0 RK = RD
TJ = 25C VGS(off) = 7.0 V t f , FALL TIME (ns)
1000 500 200 100 50 20 10 5.0 2.0 RK = 0 RK = RD
TJ = 25C VGS(off) = 7.0 V
20
30
50
1.0 0.5 0.7 1.0
20
30
50
Figure 4. Fall Time

NOTE 1
+VDD RD SET VDS(off) = 10 V INPUT RGEN 50 50 VGEN RK RT OUTPUT RGG VGG 50
RGG
& RK
RD
(R ) 50) + RRD) TRT ) 50 D
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R D ) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
4139
J112
y fs, FORWARD TRANSFER ADMITTANCE (mmhos) 20 15 10 10 7.0 5.0 Tchannel = 25C VDS = 15 V C, CAPACITANCE (pF) Cgs 7.0 5.0 Cgd
3.0 2.0 0.5 0.7
3.0 2.0 1.5
Tchannel = 25C (Cds IS NEGLIGIBLE)
1.0
20
30
50
1.0 0.03 0.05 0.1
10
30
200 rds(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS)
rds(on), DRAINSOURCE ONSTATE RESISTANCE (NORMALIZED)
IDSS = 10 160 mA
25 mA
50 mA
75 mA 100 mA
125 mA
120
80 Tchannel = 25C
40
1.0
2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS)
7.0
8.0
Figure 8. Effect of GateSource Voltage On DrainSource Resistance
Figure 9. Effect of Temperature On DrainSource OnState Resistance
100 rds(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS) 90 80 70 60 50 40 30 20 10
9.0 8.0
Tchannel = 25C
10 NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off) and DrainSource On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an J112 The electrical characteristics table indicates that an J112 has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
7.0 6.0 5.0 4.0 3.0 2.0 1.0
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATEVOLTAGE DRAIN CURRENT (mA)
4140
MOTOROLA

JFETs Low Frequency/ Low Noise
NChannel Depletion
3 GATE
J202
1 DRAIN
2 SOURCE
1 2 3
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Storage Temperature Range Symbol VDS VDG VGS IG PD Tstg Value 40 40 40 50 310 2.82 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc) Gate Reverse Current (VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 20 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 40 0.8 100 4.0 Vdc pA Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 20 Vdc) IDSS 0.9 4.5 mAdc

Forward Transfer Admittance(1) (VDS = 20 Vdc, f = 1.0 kHz) 1. Pulse Width yfs 1000
mmhos
v 2.0 ms.
REV 1
4141
J202
5 VDS = 15 V VGS = 0 RS = 1 MW
0.01
0.1
10
100
0.001
10

1.2
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
0.6 0.4 0.2 0 1.2
4142
J202
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5

10
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
4143
MOTOROLA
JFET High Frequency Amplifier

NChannel Depletion
1 DRAIN 3 GATE
J304
2 SOURCE
1 2 3
MAXIMUM RATINGS
Rating Drain Gate Voltage GateSource Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Lead Temperature (1/16 from Case for 10 Seconds) Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value 30 30 10 350 2.8 300 65 to +150 Unit Vdc Vdc mA mW mW/C C C

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 nAdc) V(BR)GSS IGSS VGS(off) 2.0 6.0 30 100 Vdc pA Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 5.0 15 mA

Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) yos Re(yfs) 4500 7500 50
mmhos mmhos
REV 1
4144
J304
POWER GAIN
24 f = 100 MHz
16
12
8.0 4.0
L2
NOTE:
*L2 *L3
**L2 **L3
4145
J304
NOISE FIGURE
(Tchannel = 25C)
6.0 f = 400 MHz 4.0
4.5 f = 400 MHz 3.5
2.0 0 0
2.5 1.5 0 2.0
100 MHz
12
14
+ 20
4146
J304
gis @ IDSS
4147
J304
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
ID = 0.25 IDSS 200 300
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 10. S11s

30 40 20 10 0 350 340 330 320 40 30 20
Figure 11. S12s

10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
300 0.7 290 280 270 260 250 240
0.6
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
J304
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
brg @ 0.25 IDSS
4149
J304
140 150 160 170 180 190 200 210
220
140 150 160 170
0.04 180 190 200 210
220
Figure 18. S11g
Figure 19. S12g
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
0 1.5 1.0 100
350 300 200 400
340 500 700 600 800
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
300 0.7 290 280 270 260 250 240
0.6
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MOTOROLA

JFET VHF/UHF Amplifiers
J308
1 DRAIN
NChannel Depletion
3 GATE
J309 J310
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 65 to +125 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C CASE 2904, STYLE 5 TO92 (TO226AA)
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25C) (VGS = 15 Vdc, VDS = 0, TA = +125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS VGS(off) 1.0 1.0 2.0 6.5 4.0 6.5 1.0 1.0 nAdc Adc Vdc 25 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 60 30 60 1.0 Vdc mAdc
GateSource Forward Voltage (VDS = 0, IG = 1.0 mAdc)

CommonSource Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) Gpg 0.7 0.7 0.5 0.25 16 mmhos dB mmhos
CommonSource Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonGate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width
4151
J308 J309 J310


CommonSource Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonGate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonSource Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) J308 J309 J310 gos gfg J308 J309 J310 gog J308 J309 J310 Cgd Cgs 150 100 150 1.8 4.3 2.5 5.0 pF pF 13000 13000 12000 mhos Re(yfs) Re(yig) gfs 8000 10000 8000 20000 20000 18000 250 mhos mhos 12 12 mmhos mmhos mhos
CommonSource Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) CommonGate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
CommonGate Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
GateDrain Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) GateSource Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en 1.5 10 dB
nV
Hz
4152
J308 J309 J310

50 SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539002D. C5 = C6 = 5000 pF Erie (2443000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 H Miller #923030. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 LOAD
Figure 1. 450 MHz CommonGate Amplifier Test Circuit
60 I D , DRAIN CURRENT (mA) VDS = 10 V 50 40 30 20 10 5.0 IDSS + 25C + 25C TA = 55C
60 50 40 +150C + 25C 55C 30 20
IDSS, SATURATION DRAIN CURRENT (mA)
70
70
Yfs , FORWARD TRANSCONDUCTANCE (mmhos)
35 30 25 20 15 10 +150C + 25C 55C +150C VDS = 10 V f = 1.0 MHz TA = 55C + 25C
+150C 10 0 0
5.0 0 5.0 4.0 3.0 2.0 1.0 0
1.0 4.0 3.0 2.0 ID VGS, GATESOURCE VOLTAGE (VOLTS) IDSS VGS, GATESOURCE CUTOFF VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer Characteristics versus GateSource Voltage
Figure 3. Forward Transconductance versus GateSource Voltage
Yfs , FORWARD TRANSCONDUCTANCE (mhos)
100 k Yfs
1.0 k Yos, OUTPUT ADMITTANCE ( mhos)
10 RDS CAPACITANCE (pF) 7.0
120 R DS , ON RESISTANCE (OHMS)
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
VGS(off) = 2.3 V = VGS(off) = 5.7 V =
10
Cgd 1.0 0 10
24
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 4. CommonSource Output Admittance and Forward Transconductance versus Drain Current
Figure 5. On Resistance and Junction Capacitance versus GateSource Voltage
4153
J308 J309 J310

30 VDS = 10 V ID = 10 mA TA = 25C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00
|Y11|, |Y21 |, |Y22 | (mmhos)
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0
Figure 6. CommonGate Y Parameter Magnitude versus Frequency

21, 11 180 50 22 170 40 21 12, 22 20 87 20 40 60 80 100 150 20 12 11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 120 84 140 160 83 180 200 82 1000 120 100 80 85 60 86
Figure 7. CommonGate S Parameter Magnitude versus Frequency

11, 12 20 120 21 21, 22 0 22
11
40 100
20
160
30
80
40
60 12 40 VDS = 10 V ID = 10 mA TA = 25C 200 300 500 f, FREQUENCY (MHz)
21 11
60
80
130
0 100
200 300 500 f, FREQUENCY (MHz)
20 100
700
100 1000
Figure 8. CommonGate Y Parameter PhaseAngle versus Frequency
Figure 9. S Parameter PhaseAngle versus Frequency
8.0 7.0 NF, NOISE FIGURE (dB) 6.0 5.0 Gpg 4.0 NF 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 ID, DRAIN CURRENT (mA) 20 22 VDD = 20 V f = 450 MHz BW 10 MHz CIRCUIT IN FIGURE 1
24 21 G pg , POWER GAIN (dB) NF, NOISE FIGURE (dB) 18 15 12 9.0 6.0 3.0 0 24
7.0 26 6.0 5.0 4.0 3.0 2.0 1.0 2.0 0 50 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Gpg VDS = 10 V ID = 10 mA TA = 25C CIRCUIT IN FIGURE 1 NF 6.0 18 14 10 G pg , POWER GAIN (dB) 22
Figure 10. Noise Figure and Power Gain versus Drain Current
Figure 11. Noise Figure and Power Gain versus Frequency
4154
J308 J309 J310

C1 S G L1 INPUT RS = 50 C2 L2 C3 U310 D C4 L3 C5 L4 C6 BW (3 dB) 36.5 MHz ID 10 mAdc VDS 20 Vdc Device case grounded IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz C1 = 110 pF Johanson Air variable trimmer. C2, C5 = 100 pF feed thru button capacitor. C3, C4, C6 = 0.56 pF Johanson Air variable trimmer. L1 = 1/8 x 1/32 x 15/8 copper bar. L2, L4 = Ferroxcube Vk200 choke. L3 = 1/8 x 1/32 x 17/8 copper bar.
OUTPUT RL = 50
VS
SHIELD
VD
Figure 12. 450 MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40 OUTPUT POWER PER TONE (dBm) +20 0 20 40 60 80 100 120 120
U310 JFET VDS = 20 Vdc ID = 10 mAdc F1 = 449.5 MHz F2 = 450.5 MHz
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT Example of intercept point plot use: Assume two inband signals of 20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of 90 dBm. Also, each signal level at the output will be 11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. 0 +20
3RD ORDER IMD OUTPUT
100
60 40 20 80 INPUT POWER PER TONE (dBm)
Figure 13. Two Tone 3rd Order Intercept Point
4155
MOTOROLA
JFET Switching Transistors

NChannel
2 SOURCE 3 GATE

3 1
1 DRAIN
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Forward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25C) (VGS = 15 Vdc, VDS = 0, TA = 100C) GateSource Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 ID(off) 1.0 1.0 nAdc Adc V(BR)GSS IGSS VGS(off) 4.0 2.0 0.5 10 5.0 3.0 1.0 0.20 nAdc Adc Vdc 30 Vdc
OffState Drain Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) 1. FR 5 = 1.0
0.75 0.062 in.
4156

ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 VDS(on) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 rDS(on) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 30 60 100 0.4 0.4 0.4 50 25 5.0 150 75 30 Vdc mAdc
DrainSource OnVoltage (ID = 12 mAdc, VGS = 0) (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static DrainSource OnResistance (ID = 1.0 mAdc, VGS = 0)

Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 12 Vdc, f = 1.0 MHz) Ciss Crss 14 3.5 pF pF
1000 t d(on) , TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = 0 RK = RD TJ = 25C MMBF4391 VGS(off) = 12 V MMBF4392 = 7.0 V MMBF4393 = 5.0 V
1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = 0 RK = RD
TJ = 25C MMBF4391 VGS(off) = 12 V MMBF4392 = 7.0 V MMBF4393 = 5.0 V
20
30
50
2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) Figure 2. Rise Time
20
30
50
t d(off) , TURNOFF DELAY TIME (ns)
1000 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = 0 RK = RD
TJ = 25C MMBF4391 VGS(off) = 12 V = 7.0 V MMBF4392 = 5.0 V MMBF4393
1000 500 t f , FALL TIME (ns) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = RD
TJ = 25C MMBF4391 VGS(off) = 12 V MMBF4392 = 7.0 V MMBF4393 = 5.0 V
RK = 0
20
30
50
2.0 3.0 5.0 7.0 10 20 ID, DRAIN CURRENT (mA) Figure 4. Fall Time
30
50
4157

NOTE 1 VDD RD
SET VDS(off) = 10 V INPUT
RK RGG 50 VGG
RT
OUTPUT
RGEN 50 VGEN
50
RGG > RK RD = RD(RT + 50) RD + RT + 50
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) of GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and DrainSource Resistance (rDS). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rDS is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rDS decreases. Since Cgd discharges through rDS, turnon time is nonlinear. During turnoff, the situation is reversed with rDS increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. 15
V fs , FORWARD TRANSFER ADMITTANCE (mmhos)
20
MMBF4392 MMBF4391
10 C, CAPACITANCE (pF) 7.0 5.0 3.0 2.0 1.5 1.0 0.03 0.05 0.1
Cgs
10
MMBF4393
7.0 5.0 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
Tchannel = 25C VDS = 15 V
Cgd
Tchannel = 25C (Cds is negligible
ID, DRAIN CURRENT (mA) Figure 6. Typical Forward Transfer Admittance
30
r DS(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS)
r DS(on), DRAINSOURCE ONSTATE RESISTANCE (NORMALIZED)
200
IDSS 25 mA = 10 160 mA
50 mA
75 mA 100 mA
125 mA
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 70 40 10 20 50 80 110 140 170
ID = 1.0 mA VGS = 0
120 80 40
Tchannel = 25C
1.0
2.0 3.0 5.0 4.0 6.0 7.0 VGS, GATESOURCE VOLTAGE (VOLTS)
8.0
Tchannel, CHANNEL TEMPERATURE (C) Figure 9. Effect of Temperature on DrainSource OnState Resistance
Figure 8. Effect of GateSource Voltage on DrainSource Resistance
4158
r DS(on) , DRAINSOURCE ONSTATE RESISTANCE (OHMS)
80 70 60 50 40 30 20 10 0
9.0 8.0 7.0 6.0 5.0 4.0
V GS , GATESOURCE VOLTAGE (VOLTS)
100 90
Tchannel = 25C
10
NOTE 2 The ZeroGateVoltage Drain Current (IDSS) is the principle determinant of other JFET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off)) and DrainSource On Resistance (rDS(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rDS(on) and VGS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
3.0 2.0 1.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATE VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS on DrainSource Resistance and GateSource Voltage
4159
MOTOROLA
JFET VHF/UHF Amplifier Transistor

MMBF4416LT1
2 SOURCE
NChannel
3 GATE
1 DRAIN
1
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBF4416LT1 = M6A

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150C) Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) V(BR)GSS IGSS VGS(off) VGS 1.0 1.0 200 6.0 5.5 Vdc Vdc 30 Vdc nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VGS = 15 Vdc, VGS = 0) GateSource Forward Voltage (IG = 1.0 mAdc, VDS = 0) 1. FR 5 = 1.0 IDSS VGS(f) 5.0 15 1.0 mAdc Vdc
0.75 0.062 in.
4160
MMBF4416LT1

Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) |Yfs| |yos| Ciss Crss Coss 4500 7500 50 4.0 0.8 2.0 mhos mhos pF pF pF
Noise Figure (VDS = 15 Vdc, ID = 5.0 mAdc, Rg 1000 , f = 100 MHz) (VDS = 15 Vdc, ID = 5.0 mAdc, Rg 1000 , f = 400 MHz) Common Source Power Gain (VDS = 15 Vdc, ID = 5.0 mAdc, f = 100 MHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 400 MHz) NF Gps 18 10 2.0 4.0 dB dB
POWER GAIN
24 f = 100 MHz
16
12
8.0 4.0
4161
MMBF4416LT1
L2
NOTE:
*L2 *L3
**L2 **L3
NOISE FIGURE
(Tchannel = 25C)
6.0 f = 400 MHz 4.0
4.5 f = 400 MHz 3.5
2.0 0 0
2.5 1.5 0 2.0
100 MHz
12
14
+ 20
4162
MMBF4416LT1
gis @ IDSS
4163
MMBF4416LT1
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
ID = 0.25 IDSS 200 300
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 10. S11s

30 40 20 10 0 350 340 330 320 40 30 20
Figure 11. S12s

10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
300 0.7 290 280 270 260 250 240
0.6
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MMBF4416LT1
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
brg @ 0.25 IDSS
4165
MMBF4416LT1
140 150 160 170 180 190 200 210
220
140 150 160 170
0.04 180 190 200 210
220
Figure 18. S11g
Figure 19. S12g
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
0 1.5 1.0 100
350 300 200 400
340 500 700 600 800
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
300 0.7 290 280 270 260 250 240
0.6
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MOTOROLA
JFET General Purpose Transistor

NChannel
2 SOURCE 3 GATE
MMBF5457LT1
1 DRAIN
1 2
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage Reverse GateSource Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 25 10 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
DEVICE MARKING
MMBF5457LT1 = 6D

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 100 Adc) V(BR)GSS IGSS VGS(off) VGS 0.5 2.5 1.0 200 6.0 Vdc Vdc 25 Vdc nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. IDSS 1.0 5.0 mAdc
4167
MMBF5457LT1
Forward Transfer Admittance(2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. |Yfs| |yrs| Ciss Crss 1000 10 4.5 1.5 5000 50 7.0 3.0 mhos mhos pF pF
5 VDS = 15 V VGS = 0 RS = 1 MW 14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 10 100 0 0.001 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 10 VDS = 15 V VGS = 0 f = 1 kHz

1.2
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
0.6 0.4 0.2 0 1.2
4168
MMBF5457LT1
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5

10
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
4169
MOTOROLA
JFET General Purpose Transistor

PChannel
2 SOURCE 3 GATE
MMBF5460LT1
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating DrainGate Voltage Reverse GateSource Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
DEVICE MARKING
MMBF5460LT1 = 6E

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) V(BR)GSS IGSS VGS(off) VGS 0.75 0.5 5.0 1.0 6.0 4.0 nAdc Adc Vdc Vdc 40 Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, RG = 1.0 M, f = 100 Hz, BW = 1.0 Hz) 1. FR 5 = 1.0 |Yfs| |yos| Ciss Crss en 1000 5.0 1.0 20 4000 75 7.0 2.0 mhos mhos pF pF nV Hz
0.75 0.062 in.
4170
MMBF5460LT1
DRAIN CURRENT versus GATE SOURCE VOLTAGE
4.0 3.5 I D, DRAIN CURRENT (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATESOURCE VOLTAGE (VOLTS) 1.8 2.0 TA = 55C 25C 125C VDS = 15 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 4000 3000 2000
FORWARD TRANSFER ADMITTANCE versus DRAIN CURRENT
1000 700 500 300 200 0.2 0.3 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0

10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATESOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = 55C 25C 125C VDS = 15 V
10000 7000 5000 3000 2000
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 VDS = 15 V f = 1.0 kHz 7.0

16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = 55C 25C 125C VDS = 15 V
10000 7000 5000 3000 2000
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10
4171
MMBF5460LT1
r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 300 200 IDSS = 3.0 mA 100 70 50 30 20 10 0.1 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 6.0 mA 10 mA 10 VDS = 15 V f = 1.0 kHz C, CAPACITANCE (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Coss Crss 10 20 30 VDS, DRAINSOURCE VOLTAGE (VOLTS) 40 Ciss f = 1.0 MHz VGS = 0
Figure 7. Output Resistance versus Drain Current
5.0 VDS = 15 V VGS = 0 RG = 1.0 Megohm
10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VDS = 15 V VGS = 0 f = 100 Hz
4.0
3.0
2.0
1.0
0 10
20 30 50
100 200 300 500 1000 2000 3000 f, FREQUENCY (Hz)
10,000
0 1.0
10 100 1000 RS, SOURCE RESISTANCE (k Ohms)
10,000
vi Crss Ciss ross Coss | yfs | vi
COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = j Crss
* Cosp is Coss in parallel with Series Combination of Ciss and Crss.
NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Figure 11. Equivalent Low Frequency Circuit
4172
MOTOROLA
JFET Transistor
NChannel
2 SOURCE 3 GATE
MMBF5484LT1
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating DrainGate Voltage Reverse GateSource Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg 65 to +150 mW mW/C C Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
DEVICE MARKING
MMBF5484LT1 = 6B

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 0.3 1.0 0.2 3.0 nAdc Adc Vdc 25 Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc

Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 1. FR 5 = 1.0 |Yfs| |yos| 3000 6000 50 mhos mhos
0.75 0.062 in.
4173
MMBF5484LT1
SMALL SIGNAL CHARACTERISTICS (Continued)

Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss Crss Coss 5.0 1.0 2.0 pF pF pF
Noise Figure (VDS = 15 Vdc, ID = 1.0 mAdc, YG = 1.0 mmhos) (RG = 1.0 k, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, YG = 1.0 mhos) (RG = 1.0 M, f = 1.0 kHz) Common Source Power Gain (VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz) NF Gps 16 3.0 2.5 25 dB dB
POWER GAIN
24 f = 100 MHz
16
12
8.0 4.0
4174
MMBF5484LT1
L2
NOTE:
*L2 *L3
**L2 **L3
NOISE FIGURE
(Tchannel = 25C)
6.0 f = 400 MHz 4.0
4.5 f = 400 MHz 3.5
2.0 0 0
2.5 1.5 0 2.0
100 MHz
12
14
+ 20
4175
MMBF5484LT1
gis @ IDSS
4176
MMBF5484LT1
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
ID = 0.25 IDSS 200 300
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 10. S11s

30 40 20 10 0 350 340 330 320 40 30 20
Figure 11. S12s

10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
300 0.7 290 280 270 260 250 240
0.6
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MMBF5484LT1
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
brg @ 0.25 IDSS
4178
MMBF5484LT1
140 150 160 170 180 190 200 210
220
140 150 160 170
0.04 180 190 200 210
220
Figure 18. S11g
Figure 19. S12g
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
0 1.5 1.0 100
350 300 200 400
340 500 700 600 800
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
300 0.7 290 280 270 260 250 240
0.6
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MOTOROLA
JFET Chopper
PChannel Depletion
2 SOURCE 3 GATE 1 DRAIN
MMBFJ175LT1
3 1
MAXIMUM RATINGS
Rating Drain Gate Voltage Reverse Gate Source Voltage Symbol VDG VGS(r) Value 25 25 Unit V V
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBFJ175LT1 = 6W

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (VDS = 0, ID = 1.0 A) Gate Reverse Current (VDS = 0 V, VGS = 20 V) Gate Source Cutoff Voltage (VDS = 15, ID = 10 nA) V(BR)GSS IGSS VGS(OFF) 30 3.0 1.0 6.0 V nA V
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (2) (VGS = 0, VDS = 15 V) Drain Cutoff Current (VDS = 15 V, VGS = 10 V) Drain Source On Resistance (ID = 500 mA) Input Capacitance Reverse Transfer Capacitance 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle VDS = 0, VGS = 10 V f = 1.0 MHz IDSS ID(off) rDS(on) Ciss Crss 7.0 60 1.0 125 11 pF F 5.5 mA nA
v 2.0%.
4180
MOTOROLA
JFET Chopper
PChannel Depletion
3 GATE
2 SOURCE
MMBFJ177LT1
1 DRAIN
3 1
MAXIMUM RATINGS
Rating DrainGate Voltage Reverse GateSource Voltage Symbol VDG VGS(r) Value 25 25 Unit Vdc Vdc
DEVICE MARKING
MMBFJ177LT1 = 6Y

OFF CHARACTERISTICS
GateSource Breakdown Voltage (VDS = 0, ID = 1.0 Adc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 30 0.8 1.0 2.5 Vdc nAdc Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(2) (VGS = 0, VDS = 15 Vdc) Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) Drain Source On Resistance (ID = 500 Adc) Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10 Vdc f = 1.0 MHz IDSS ID(off) rDS(on) Ciss Crss 1.5 20 1.0 300 11 5.5 mAdc nAdc pF
1. FR 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle 2%.
4181
MOTOROLA
JFET VHF/UHF Amplifier Transistor
NChannel
3 GATE
2 SOURCE
1 DRAIN
3 1
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc) Gate Reverse Current (VGS = 15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) 25 1.0 2.0 1.0 1.0 4.0 6.5 Vdc nAdc Adc Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 10 Vdc, VGS = 0) GateSource Forward Voltage (IG = 1.0 mAdc, VDS = 0) MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 30 60 1.0 mAdc Vdc
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. FR 5 = 1.0 |Yfs| |yos| Ciss Crss en 8.0 10 18 250 5.0 2.5 mmhos mhos pF pF nV Hz
0.75 0.062 in.
4182
60 50 40 +150C + 25C 55C 30 20
70
70
+150C 10 0 0
5.0 0 5.0 4.0 3.0 2.0 1.0 0
100 k Yfs
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
VGS(off) = 2.3 V = VGS(off) = 5.7 V =
10
Cgd 1.0 0 10
24
100 0.01
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
4183
|Y11|, |Y21 |, |Y22 | (mmhos)
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0

21, 11 180 50 22 170 40 21 12, 22 20 87 20 40 60 80 100 150 20 12 11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 120 84 140 160 83 180 200 82 1000 120 100 80 85 60 86

11, 12 20 120 21 21, 22 0 22
11
40 100
20
160
30
80
40
21 11
60
80
130
0 100
20 100
700
100 1000
4184
OUTPUT RL = 50
VS
SHIELD
VD
100
4185
MOTOROLA
JFET Transistor
NChannel
2 SOURCE 3 GATE
MMBFU310LT1
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
DEVICE MARKING
MMBFU310LT1 = 6C

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate 1 Leakage Current (VGS = 15 Vdc, VDS = 0) Gate 2 Leakage Current (VGS = 15 Vdc, VDS = 0, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) V(BR)GSS IG1SS IG2SS VGS(off) 25 2.5 150 150 6.0 Vdc pA nAdc Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 10 Vdc, VGS = 0) GateSource Forward Voltage (IG = 10 mAdc, VDS = 0) IDSS VGS(f) 24 60 1.0 mAdc Vdc
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) 1. FR 5 = 1.0 |Yfs| |yos| Ciss Crss 10 18 250 5.0 2.5 mmhos mhos pF pF
0.75 0.062 in.
4186
MMBFU310LT1
60 50 40 +150C + 25C 55C 30 20
70
70
+150C 10 0 0
5.0 0 5.0 4.0 3.0 2.0 1.0 0
100 k Yfs
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
VGS(off) = 2.3 V = VGS(off) = 5.7 V =
10
Cgd 1.0 0 10
24
100 0.01
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
4187
MMBFU310LT1
|Y11|, |Y21 |, |Y22 | (mmhos)
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0

21, 11 180 50 22 170 40 21 12, 22 20 87 20 40 60 80 100 150 20 12 11 140 10 VDS = 10 V ID = 10 mA TA = 25C 700 120 84 140 160 83 180 200 82 1000 120 100 80 85 60 86

11, 12 20 120 21 21, 22 0 22
11
40 100
20
160
30
80
40
21 11
60
80
130
0 100
20 100
700
100 1000
4188
MMBFU310LT1
OUTPUT RL = 50
VS
SHIELD
VD
100
4189
MOTOROLA
JFET VHF Amplifier

NChannel Depletion
1 DRAIN 3 GATE
MPF102
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG PD TJ Tstg Value 25 25 25 10 350 2.8 125 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) V(BR)GSS IGSS VGS(off) VGS 0.5 2.0 2.0 8.0 7.5 nAdc Adc Vdc Vdc 25 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) IDSS 2.0 20 mAdc

Forward Transfer Admittance(1) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Admittance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Output Conductance (VDS = 15 Vdc, VGS = 0, f = 100 MHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 1. Pulse Test; Pulse Width yfs 2000 1600 Re(yis) Re(yos) Ciss Crss 7500 800 200 7.0 3.0
mmhos
mmhos mmhos
pF pF
4190
MPF102
POWER GAIN
24 f = 100 MHz
16
12
8.0 4.0
L2
NOTE:
*L2 *L3
**L2 **L3
4191
MPF102
NOISE FIGURE
(Tchannel = 25C)
6.0 f = 400 MHz 4.0
4.5 f = 400 MHz 3.5
2.0 0 0
2.5 1.5 0 2.0
100 MHz
12
14
+ 20
4192
MPF102
gis @ IDSS
4193
MPF102
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
ID = 0.25 IDSS 200 300
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
Figure 10. S11s

30 40 20 10 0 350 340 330 320 40 30 20
Figure 11. S12s

10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
300 0.7 290 280 270 260 250 240
0.6
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MPF102
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
brg @ 0.25 IDSS
4195
MPF102
140 150 160 170 180 190 200 210
220
140 150 160 170
0.04 180 190 200 210
220
Figure 18. S11g
Figure 19. S12g
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
0 1.5 1.0 100
350 300 200 400
340 500 700 600 800
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
300 0.7 290 280 270 260 250 240
0.6
130
230
130
230
140 150 160 170 180 190 200 210
220
140 150 160 170 180 190 200 210
220
MOTOROLA
JFETs Switching
NChannel Depletion
3 GATE
1 DRAIN
MPF4392 MPF4393
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD Tchannel, Tstg Value 30 30 30 50 350 2.8 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C CASE 2904, STYLE 5 TO92 (TO226AA)
1 2 3

OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) DrainCutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) MPF4392 MPF4393 V(BR)GSS IGSS ID(off) VGS 2.0 0.5 5.0 3.0 1.0 0.1 nAdc Adc Vdc 1.0 0.2 nAdc Adc 30 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) DrainSource OnVoltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 1.0 mAdc, VGS = 0) IDSS MPF4392 MPF4393 VDS(on) MPF4392 MPF4393 rDS(on) MPF4392 MPF4393 60 100 0.4 0.4 25 5.0 75 30 Vdc mAdc

Forward Transfer Admittance (VDS = 15 Vdc, ID = 25 mAdc, f = 1.0 kHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 1.0 kHz) 1. Pulse Test: Pulse Width |yfs| MPF4392 MPF4393 17 12 mmhos
REV 1
4197
MPF4392 MPF4393

DrainSource ON Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VGS = 15 Vdc, VDS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 12 Vdc, VDS = 0, f = 1.0 MHz) (VDS = 15 Vdc, ID = 10 mAdc, f = 1.0 MHz) rds(on) MPF4392 MPF4393 Ciss Crss 2.5 3.2 3.5 6.0 60 100 10 pF pF
Rise Time (See Figure 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) Fall Time (See Figure 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) TurnOn Time (See Figures 1 and 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) TurnOff Time (See Figures 3 and 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) tr MPF4392 MPF4393 tf MPF4392 MPF4393 ton MPF4392 MPF4393 toff MPF4392 MPF4393 20 37 35 55 4.0 6.5 15 15 ns 15 29 20 35 ns 2.0 2.5 5.0 5.0 ns ns

1000 t d(on), TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V t r , RISE TIME (ns) 1000 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V

1000 t d(off) , TURNOFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V 1000 500 200 t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
Figure 2. Rise Time

TJ = 25C MPF4392 VGS(off) = 7.0 V MPF4393 = 5.0 V
RK = RD
RK = 0
5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA)
20
30
50
Figure 3. TurnOff Delay Time 4198
Figure 4. Fall Time Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPF4392 MPF4393
VDD RD SET VDS(off) = 10 V INPUT RGEN 50 50 VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RK RGG VGG RT OUTPUT 50 NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
RGG
& RK
RD = RD(RT + 50) RD + RT + 50
y fs , FORWARD TRANSFER ADMITTANCE (mmhos)
20 MPF4392 10 MPF4393 7.0 5.0 Tchannel = 25C VDS = 15 V C, CAPACITANCE (pF)
15 10 Cgs 7.0 5.0 Tchannel = 25C (Cds IS NEGLIGIBLE) Cgd
3.0 2.0 0.5 0.7 1.0
3.0 2.0 1.5
5.0 7.0 10 2.0 3.0 ID, DRAIN CURRENT (mA)
20
30
50
1.0 0.03 0.05
0.1
10
30
200 rds(on) , DRAINSOURCE ONSTATE RESISTANCE (OHMS) rds(on) , DRAINSOURCE ONSTATE RESISTANCE (NORMALIZED) IDSS = 10 160 mA 25 mA 50 mA 75 mA 100 mA 125 mA
120
80
40 Tchannel = 25C 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS) 7.0 8.0
Figure 8. Effect of GateSource Voltage On DrainSource Resistance Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 9. Effect of Temperature On DrainSource OnState Resistance 4199
MPF4392 MPF4393
100 r ds(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS) 90 80 70 60 50 40 30 20 10 VGS(off) rDS(on) @ VGS = 0 Tchannel = 25C 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 V GS , GATESOURCE VOLTAGE (VOLTS) NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other JFET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off)) and DrainSource On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATE VOLTAGE DRAIN CURRENT (mA)
4200
Section 5
SmallSignal Tuning and Switching Diodes
In Brief . . .
Packaging options include plastic DIPs and surface mount packages. Most SOT23, SC59, SC70/SOT323 and SOT223 package devices are only available in Tape and Reel. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.
CASE 29-04 (TO-226AA)
2 3 1 2
CASE 51-02 (DO-204AA)
CASE 182-02 (TO-226AC)
3 3 1 2 2 1 1 2 4
CASE 318-08 SOT-23 (TO-236AB)
CASE 318D-04 SC-59
CASE 318E-04 SOT-223 (TO-261AA)
3 2 1 2 1
3 2
CASE 419-02 SC-70/SOT-323
CASE 425-04 SOD-123
CASE 463-01 SC90/SOT-416
14 1
16 1
CASE 646-06
CASE 648-08
14 1
16 1
CASE 751A-03 SO-14
CASE 751B-05 SO-16
51

SOT-23, SC-59, SC-70/SOT-323, SOT-223, SO14 and SO-16 packages are available only in Tape and Reel. Use the appropriate suffix indicated below to order any of the SOT-23, SC-59, SC-70/SOT-323, SOT-223, SO14 and SO-16 packages. (See Section 6 on Packaging for additional information). SOT-23: available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 8 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/3000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/10,000 unit reel. available in 12 mm Tape and Reel Use the device title (which already includes the T1 suffix) to order the 7 inch/1000 unit reel. Replace the T1 suffix in the device title with a T3 suffix to order the 13 inch/4000 unit reel. available in 16 mm Tape and Reel Add an R1 suffix to the device title to order the 7 inch/500 unit reel. Add an R2 suffix to the device title to order the 13 inch/2500 unit reel. available in 16 mm Tape and Reel Add an R1 suffix to the device title to order the 7 inch/500 unit reel. Add an R2 suffix to the device title to order the 13 inch/2500 unit reel.
SC-59:
SC-70/ SOT-323:
SOT-223:
SO-14:
SO-16:


SOT-23, SC-59 and the SC-70/SOT-323 packages have a device marking and a date code etched on the device. The generic example below depicts both the device marking and a representation of the date code that appears on the SC-70/SOT-323, SC-59 and SOT-23 packages.
ABC D
52
MOTOROLA
Silicon Tuning Diodes

Designed for electronic tuning and harmonicgeneration applications, and provide solidstate reliability to replace mechanical tuning methods. Guaranteed HighFrequency Q Guaranteed Wide Tuning Range Standard 10% Capacitance Tolerance Complete Typical Design Curves
1N5148 1N5148A
6.8 47 pF EPICAP VOLTAGEVARIABLE CAPACITANCE DIODES

Rating Reverse Voltage Forward Current RF Power Input(1) Device Dissipation @ TA = 25C Derate above 25C Device Dissipation @ TC = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF Pin PD PC TJ Tstg Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 55 Vdc, TA = 25C) Reverse Voltage Leakage Current (VR = 55 Vdc, TA = 150C) Series Inductance (f = 250 MHz, L 1/16) Case Capacitance (f = 1.0 MHz, L 1/16) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) 1. The RF power input rating assumes that an adequate heatsink is provided. CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device 1N5148 1N5148A Min 42.3 44.7 Typ 47 47 Max 51.7 49.3 Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Min 200 200 TR, Tuning Ratio C4/C60 f = 1.0 MHz Min 3.2 3.2 Typ 3.4 3.4 Value 60 250 5.0 400 2.67 2.0 13.3 +175 65 to + 200 Unit Volts mAdc Watts mW mW/C Watts mW/C C C
1
CASE 5102 (DO204AA)

Symbol V(BR)R IR LS CC TCC Min 60 Typ 70 4.0 0.17 200 Max 0.02 20 Unit Vdc Adc nH pF ppm/C
VR = 4.0 Vdc, f = 1.0 MHz Min 0.43 0.43 Typ 0.45 0.45
53
1N5148 1N5148A
PARAMETER TEST METHODS
1. LS, SERIES INDUCTANCE LS is measured on a shorted package at 250 MHz using an impedance bridge (Boonton Radio Model 250A RX Meter). L = lead length. 2. CC, CASE CAPACITANCE CC is measured on an open package at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 3. CT, DIODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 4. TR, TUNING RATIO TR is the ratio of CT measured at 4.0 Vdc divided by CT measured at 60 Vdc. 5. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q
100 70 50 C T , DIODE CAPACITANCE (pF) 30 1N5148 10 7.0 5.0 3.0
(Boonton Electronics Model 33AS8). 6. , DIODE CAPACITANCE REVERSE VOLTAGE SLOPE The diode capacitance, CT (as measured at VR = 4.0 Vdc, f = 1.0 MHz) is compared to CT (as measured at VR = 60 Vdc, f = 1.0 MHz) by the following equation which defines . log CT(4) log CT(60)
log 60 log 4
Note that a CT versus VR law is assumed as shown in the following equation where CC is included. CT
+ VKa
7. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = 65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation which defines TCC: TCC
10000 7000 5000 3000 Q, FIGURE OF MERIT
+ 2pfC G
C + CT () 85C))65 T(65C) CT106 85 (25C)

TA = 25C f = 50 MHz
TA = 25C f = 1 MHz
1000 700 500 300
1N5148
1.0 1.0
5.0 7.0 10 3.0 VR, REVERSE VOLTAGE (VOLTS)
30
50 60
100
1.0
30
50 60

1.020 NORMALIZED Q, FIGURE OF MERIT (%) NORMALIZED DIODE CAPACITANCE 1.010 1.000 0.990 0.980 0.970 0.960 100 NORMALIZED TO C4 VR = 4 Vdc TA = 25C 75 50 25 0 +25 +50 +75 +100 140 130 120 110 100 90 80
Figure 2. Figure of Merit versus Reverse Voltage
PERCENT OF Q @ 25C VR = 4 Vdc f = 50 MHz 25 0 +25 +50 +75 +85
70 65 50
Figure 3. Normalized Diode Capacitance versus Junction Temperature 54
Figure 4. Normalized Figure of Merit versus Junction Temperature Motorola SmallSignal Transistors, FETs and Diodes Device Data
1N5148 1N5148A
40 I R , REVERSE CURRENT (nA) 2000
32 Q, FIGURE OF MERIT
1000 700 500 300 1N5148
24
16
+ 75C
+ 25C VR = 4 Vdc 100 10
0 0 10 40 20 30 VR, REVERSE VOLTAGE (VOLTS) 50 60
30 50 f, FREQUENCY (MHz)
70
100
Figure 5. Reverse Current versus Reverse Bias Voltage
Figure 6. Figure of Merit versus Frequency
55
MOTOROLA

These are epitaxial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonicgeneration applications in AM through UHF ranges, providing solidstate reliability to replace mechanical tuning methods. Excellent Q Factor at High Frequencies Guaranteed Capacitance Change 2.0 to 30 V Capacitance Tolerance 10% and 5.0% Complete Typical Design Curves
1N5446ARL 1N5448ARL 1N5456A

6.8 100 pF 30 VOLTS VOLTAGEVARIABLE CAPACITANCE DIODES
MAXIMUM RATINGS(1)
Rating Reverse Voltage Device Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PD TJ Tstg Value 30 400 2.67 +175 65 to + 200 Unit Volts mW mW/C C C
CASE 5102 (DO204AA)

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 150C) Series Inductance (f = 250 MHz, lead length 1/16) Case Capacitance (f = 1.0 MHz, lead length 1/16) Diode Capacitance Temperature Coefficient (Note 6) (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device 1N5446ARL 1N5448ARL 1N5456A Min (Nom 10%) 16.2 19.8 90 Nom 18 22 100 Max (Nom +10%) 19.8 24.2 110 Symbol V(BR)R IR LS CC TCC Min 30 Typ 4.0 0.17 300 Max 0.02 20 Unit Vdc Adc nH pF ppm/C
TR, Tuning Ratio C2/C30 f = 1.0 MHz Min 2.6 2.6 2.7 Max 3.2 3.2 3.3
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Min 350 350 175
1. Indicates JEDEC Registered Data.
(Replaces 1N5441A/D)
56
1N5446ARL 1N5448ARL 1N5456A

1. LS, SERIES INDUCTANCE LS is measured on a shorted package at 250 MHz using an impedance bridge (Boonton Radio Model 250A RX Meter or equivalent). 2. CC, CASE CAPACITANCE CC is measured on an open package at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 3. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 4. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 5. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q
+ 2pfC G
(Boonton Electronics Model 33AS8 or equivalent). 7. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = 65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: TCC C + CT() 85C)) 65T(65C) 85 106 CT(25C)
Accuracy limited by CT measurement to 0.1 pF.
1.046 NORMALIZED DIODE CAPACITANCE 1.036 1.026 1.016 1.006 VR = 30 Vdc 0.996 0.986 0.976 0.966 75 50 25 0 +25 +50 TJ, TEMPERATURE (C) +75 +100 +125 VR = 2.0 Vdc VR = 4.0 Vdc
Figure 1. Normalized Diode Capacitance versus Junction Temperature
TYPICAL DEVICE PERFORMANCE

1000 500 C T , DIODE CAPACITANCE (pF) 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 30 1N5456A TA = 25C f = 1.0 MHz
57
1N5446ARL 1N5448ARL 1N5456A

10000 5000 Q, FIGURE OF MERIT TA = 25C f = 50 MHz 3000 2000 1000 Q, FIGURE OF MERIT 500 300 200 100 50 30 20 10 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 20 10 10 20 1N5456A TA = 25C VR = 4.0 Vdc
2000 1000 500 1N5456A 200 100 1.0
30 50 70 100 f, FREQUENCY (MHz)
200 250

100 50 I R , REVERSE CURRENT (nA) 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 5.0 TA = 25C 10 15 20 25 30 TA = 75C TA = 125C
V f , FORWARD VOLTAGE (VOLTS)
1.12 1.06 1.00 0.94 0.88 1N5456A
0.82 0.76 0.70 0 75 150 225 300
375
425
500
IF, FORWARD CURRENT (mA)
Figure 6. Forward Voltage versus Forward Current
58
MOTOROLA
Switching Diode
ANODE 3 CATHODE 2
BAL99LT1
MAXIMUM RATINGS
3
Rating Continuous Reverse Voltage Peak Forward Current
Symbol VR IF
Value 70 100
Unit Vdc mAdc

1 2
DEVICE MARKING
BAL99LT1 = JF

OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Reverse Breakdown Voltage (IR = 100 Adc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Recovery Current (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 ) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , measured at IR = 1.0 mAdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR V(BR) VF QS CD trr VFR 715 855 1000 1250 45 1.5 6.0 1.75 pC pF ns Vdc 70 2.5 30 50 Vdc mV Adc
0.062 in. 0.024 in. 99.5% alumina.
59
BAL99LT1
100 10 TA = 150C IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( A) 1.0 TA = 125C
10 TA = 85C TA = 25C TA = 40C
0.1
TA = 85C
1.0
TA = 55C 0.01 TA = 25C
0.1 0.2
0.4
0.6
0.8
1.0
1.2
0.001
10
20
30
40
50
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Leakage Current
0.68 CD , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
510
MOTOROLA
Switching Diode
3 CATHODE 1 ANODE
BAS16LT1
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc
1 2 3
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
DEVICE MARKING
BAS16LT1 = A6

OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 Adc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 ) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 ) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR V(BR) VF CD VFR trr QS 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 Vdc mV Adc
0.062 in. 0.024 in. 99.5% alumina.
511
BAS16LT1
820 +10 V 2.0 k 100 H 0.1 F D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A)
10 TA = 150C TA = 85C 1.0 TA = 125C
10 TA = 40C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.001 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50
0.68 CD, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
512
MOTOROLA
Silicon Switching Diode

3 CATHODE 1 ANODE
BAS16WT1

Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 s Total Power Dissipation, One Diode Loaded TA = 25C Derate above 25C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range Symbol VR IR IFM(surge) PD Max 75 200 500 200 1.6 Unit V mA mA mW mW/C
1 2
TJ, Tstg
55 to +150
Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RJA Max 0.625 Unit C/mW
DEVICE MARKING
BAS16WT1 = A6

Characteristic Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Current (VR = 75 V) (VR = 75 V, TJ = 150C) (VR = 25 V, TJ = 150C) Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 ) (Figure 1) Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 ) (Figure 2) Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3)
Symbol VF
Min
Max 715 866 1000 1250
Unit mV
IR CD trr QS VFR 1.0 50 30 2.0 6.0 45 1.75
pF ns PC V
REV 1
513
BAS16WT1
1 ns MAX t 10% tif trr 50 DUTY CYCLE = 2% 90% VF 100 ns Irr 500 DUT
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE R 10 M C 7 pF VC 20 ns MAX t 10% VCM VCM D1 243 pF 100 K 500 DUT BAW62
+ Qa C
DUTY CYCLE = 2% t
90% Vf 400 ns
Figure 2. Recovery Charge Equivalent Test Circuit
120 ns V 90%
V 1 K 450
Vfr
DUT
50
10%
t DUTY CYCLE = 2% 2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
514
BAS16WT1
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
10 TA = 85C TA = 25C TA = 40C
0.1
TA = 85C
1.0
TA = 55C 0.01 TA = 25C
0.64
0.60
0.56
0.52
515
MOTOROLA
High Voltage Switching Diode

3 CATHODE 1 ANODE
BAS21LT1
MAXIMUM RATINGS
1 2
DEVICE MARKING
BAS21LT1 = JS

OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 Adc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR V(BR) VF CD trr 1000 1250 5.0 50 pF ns 250 1.0 100 Vdc mV Adc
0.062 in. 0.024 in. 99.5% alumina.
516
BAS21LT1
517
MOTOROLA
Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
BAS40LT1
40 VOLTS SCHOTTKY BARRIER DIODES 3 CATHODE 1 ANODE
3 1 2

Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction and Storage Temperature Range Symbol VR PF 225 1.8 TJ, Tstg 55 to +150 mW mW/C C Value 40 Unit Volts
DEVICE MARKING
BAS40LT1 = B1

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR VF VF VF Min 40 Max 5.0 1.0 380 500 1.0 Unit Volts pF Adc mVdc mVdc Vdc
518
MOTOROLA
Common Anode Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage 0.50 Volts (Typ) @ IF = 10 mAdc
CATHODE 1 2 CATHODE
BAS40-04LT1
40 VOLTS SCHOTTKY BARRIER DIODES
ANODE 3
3 1 2


519
MOTOROLA
Dual Series Schottky Barrier Diodes

1 ANODE 2 CATHODE
BAS40-06LT1
3 1 2
3 CATHODE/ANODE


520
MOTOROLA

3 CATHODE 1 ANODE
BAS70LT1
3 1 2

DEVICE MARKING
BAS70LT1 = BE

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V) (VR = 70 V) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 15 mAdc) Symbol V(BR)R CT IR VF VF VF Min 70 Max 2.0 0.1 10 410 750 1.0 Unit Volts pF Adc mVdc mVdc Vdc
521
MOTOROLA
Common Anode Schottky Barrier Diode

CATHODE 1 2 CATHODE
BAS70-04LT1
ANODE 3
3 1 2


Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V) (VR = 70 V) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 15 mAdc) Symbol V(BR)R CT IR VF VF VF Min 70 Max 2.0 0.1 10 410 750 1.0 Unit Volts pF Adc mVdc mVdc Vdc
522
MOTOROLA
Switching Diode
This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel Use BAS116LT3 to order the 13 inch/10,000 unit reel
BAS116LT1
3 1 2
3 CATHODE
1 ANODE
MAXIMUM RATINGS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAS116LT1 = JV

OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150C) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR VF 75 5.0 80 900 1000 1100 1250 2.0 3.0 Vdc nAdc mV
CD trr
pF s
0.062 in. 0.024 in. 99.5% alumina.
REV 1
523
BAS116LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
524
MOTOROLA

CATHODE 1 2 CATHODE
BAT54ALT1
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES
ANODE 3
3 1 2

Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 225 1.8 TJ 55 to +150 Tstg 55 to +150 C mW mW/C C Value 30 Unit Volts
DEVICE MARKING
BAT54ALT1 = B6
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Symbol V(BR)R CT IR VF VF VF trr VF VF Min 30 Typ 7.6 0.5 0.22 0.41 0.52 0.29 0.35 Max 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc
REV 1
525
BAT54ALT1
100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA)
1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (VOLTS) 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30
10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0
14 C T , TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25 30
Figure 4. Total Capacitance
526
MOTOROLA

3 CATHODE 1 ANODE
BAT54LT1
30 VOLTS SILICON HOTCARRIER DETECTOR AND SWITCHING DIODES
3 1 2

DEVICE MARKING
BAT54LT1 = LV3

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1 Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc)
Symbol V(BR)R CT IR VF VF VF trr VF VF
Min 30
Typ 7.6 0.5 0.22 0.41 0.52 0.29 0.35
Max 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40
Unit Volts pF Adc Vdc Vdc Vdc ns Vdc Vdc
REV 2
527
BAT54LT1

100 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (mA) 1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (VOLTS) 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30
10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0
528
MOTOROLA

BAT54SLT1
30 VOLTS DUAL HOTCARRIER DETECTOR AND SWITCHING DIODES
1 ANODE
2 CATHODE 3 CATHODE/ANODE
3 1 2

DEVICE MARKING
BAT54S = LD3

Min 30
Typ 7.6 0.5 0.22 0.41 0.52 0.29 0.35
Max 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40
REV 2
529
BAT54SLT1

10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0
530
MOTOROLA

BAT54SWT1
30 VOLT DUAL SERIES SCHOTTKY BARRIER DIODES
1 ANODE
2 CATHODE 3 CATHODE/ANODE
1 2
CASE 419 02, STYLE 9 SOT 323 (SC 70)

DEVICE MARKING
BAT54SWT1 = B8

REV 1
531
BAT54SWT1
10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0
532
MOTOROLA
Schottky Barrier Diode

1 Cathode 2 Anode
BAT54T1
30 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE
2 1
CASE 425 04, STYLE 1 SOD 123

DEVICE MARKING
BAT54T1 = BU

REV 1
533
BAT54T1

10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0
534
MOTOROLA
Schottky Barrier Diode

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Extremely Low Forward Voltage 0.35 Volts (Typ) @ IF = 10 mAdc
BAT54WT1
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE
3 CATHODE
1 ANODE
1 2
CASE 419 02, STYLE 2 SOT 323 (SC 70)

DEVICE MARKING
BAT54WT1 = B4

Min 30
Typ 7.6 0.5 0.22 0.41 0.52 0.29 0.35
Max 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40
REV 1
535
BAT54WT1
10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0
536
MOTOROLA
Monolithic Dual Switching Diode Common Cathode

ANODE 1 3 CATHODE 2 ANODE
BAV70LT1
3 1
MAXIMUM RATINGS (EACH DIODE)

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
DEVICE MARKING
BAV70LT1 = A4

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time RL = 100 (IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 715 855 1000 1250 6.0 ns 60 2.5 100 1.5 pF mVdc 70 Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
537
BAV70LT1
Curves Applicable to Each Anode

100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C TA = 85C 10 TA = 40C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
0.9
0.8
0.7
0.6
538
MOTOROLA
Dual Switching Diode

ANODE 1 3 CATHODE 2
BAV70WT1

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc CASE 41902, STYLE 5 SC70/SOT323
1 2
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 0.625 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV70WT1 = A4

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) 70 Vdc
IR1 IR2 CD VF
5.0 100 1.5
Adc nAdc pF mVdc
trr VRF
715 855 1000 1250 6.0 1.75 ns V
0.062 in. 0.024 in. 99.5% alumina.
539
BAV70WT1
BAV70
RS = 50 IF SAMPLING OSCILLOSCOPE RL = 50
tr
tp I 10% +IF trr OUTPUT PULSE
VR
90% INPUT PULSE
10% OF
VR 100 W
1 K
450
RS = 50 BAV70 SAMPLING OSCILLOSCOPE RL = 50
I V 90%
VFR
10% t tr tp INPUT PULSE
Figure 2.
OUTPUT PULSE
540
BAV70WT1
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
10 TA = 85C TA = 25C TA = 40C
0.1
TA = 85C
1.0
TA = 55C 0.01 TA = 25C
0.9
0.8
0.7
0.6
541
MOTOROLA
Monolithic Dual Switching Diode

BAV74LT1
3 1

DEVICE MARKING
BAV74LT1 = JA

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 5.0 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc, TJ = 125C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 ) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 100 0.1 2.0 1.0 4.0 pF Vdc ns 50 Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
542
BAV74LT1
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
0.9
0.8
0.7
0.6
543
MOTOROLA
Dual Series Switching Diode

ANODE 1 3 CATHODE/ANODE CATHODE 2
BAV99LT1
3 1 2

Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current NonRepetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.0 1.0 0.5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 65 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV99LT1 = A7 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
544
BAV99LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) (EACH DIODE)
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) V(BR) IR 70 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc
mAdc
pF mVdc
CD VF
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
trr VFR
ns V
545
BAV99LT1
CURVES APPLICABLE TO EACH DIODE
10 TA = 85C TA = 25C TA = 40C
0.1
TA = 85C
1.0
TA = 55C 0.01 TA = 25C
0.1 0.2
0.4
0.6
0.8
1.0
1.2
0.001
10
20
30
40
50
0.64
0.60
0.56
0.52
546
MOTOROLA
SC-70/SOT-323 Dual Series Switching Diode

The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications ESD Protection Polarity Reversal Protection Data Line Protection Inductive Load Protection Steering Logic
BAV99WT1 BAV99RWT1
3 1 2 ANODE 1 CATHODE 2

Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current NonRepetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM 2.0 1.0 0.5 Value 70 215 500 70 715 450 Unit Vdc mAdc mAdc V mA mA A
3 CATHODE/ANODE BAV99WT1 CASE 41902, STYLE 9 SC70/SOT323 CATHODE 1 3 CATHODE/ANODE BAV99RWT1 CASE 41902, STYLE 10 SC70/SOT323 ANODE 2
DEVICE MARKING
BAV99WT1 = A7 BAV99RWT1 = F7
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol PD
Max 200 1.6
Unit mW mW/C C/W mW mW/C C/W C
RqJA PD
625 300 2.4
RqJA TJ, Tstg
417 65 to +150

547
BAV99WT1 BAV99RWT1
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) V(BR) IR 70 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc
mAdc
pF mVdc
CD VF
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
trr VFR
ns V
548
BAV99WT1 BAV99RWT1
10 TA = 85C TA = 25C TA = 40C
0.1
TA = 85C
1.0
TA = 55C 0.01 TA = 25C
0.1 0.2
0.4
0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS)
1.2
0.001
10
20 30 40 VR, REVERSE VOLTAGE (VOLTS)
50
0.64
0.60
0.56
0.52
549
MOTOROLA

This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAV170LT1 to order the 7 inch/3,000 unit reel Use BAV170LT3 to order the 13 inch/10,000 unit reel
BAV170LT1
3 1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Symbol PD Value 70 200 500 Unit Vdc mAdc mAdc
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV170LT1 = JX

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 RL = 100 V(BR) IR CD VF 70 5.0 80 2.0 900 1000 1100 1250 3.0 Vdc nAdc pF mVdc
trr
0.062 in. 0.024 in. 99.5% alumina.
REV 1
550
BAV170LT1
551
MOTOROLA
Dual Series Switching Diode

This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAV199LT1 to order the 7 inch/3,000 unit reel Use BAV199LT3 to order the 13 inch/10,000 unit reel
BAV199LT1
3 1 2
ANODE 1 3 CATHODE/ANODE
CATHODE 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current NonRepetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 A Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Unit Vdc mAdc mAdc Vdc mAdc mAdc Adc
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA PD Max 225 1.8 556 300 2.4 RqJA TJ, Tstg 417 65 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV199LT1 = JY 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3
0.062 in. 0.024 in. 99.5% alumina.
REV 1
552
BAV199LT1
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) V(BR) IR CD VF trr 900 1000 1100 1250 3.0 s 5.0 80 2.0 pF mVdc 70 Vdc nAdc
553
MOTOROLA
Monolithic Dual Switching Diode Common Anode

BAW56LT1
3 1

DEVICE MARKING
BAW56LT1 = A1

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 715 855 1000 1250 6.0 ns 30 2.5 50 2.0 pF mVdc 70 Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
554
BAW56LT1
Curves Applicable to Each Cathode

0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
1.5
1.25
1.0
0.75
555
MOTOROLA

CATHODE 1 3 ANODE 2
BAW56WT1

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Max 70 200 500 Unit Vdc mAdc mAdc
1 2
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 0.625 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAW56WT1 = A1

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 715 855 1000 1250 6.0 ns 30 2.5 50 2.0 pF mVdc 70 Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
556
BAW56WT1
10 TA = 150C 1.0 TA = 125C
10 TA = 85C TA = 25C 1.0 TA = 40C
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
1.5
1.25
1.0
0.75
557
MOTOROLA

This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAW156LT1 to order the 7 inch/3,000 unit reel Use BAW156LT3 to order the 13 inch/10,000 unit reel
BAW156LT1
3 1 2
ANODE 3
CATHODE 1 2 CATHODE
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Symbol PD Value 70 200 500 Unit Vdc mAdc mAdc
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAW156LT1 = JZ

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF 70 5.0 80 2.0 900 1000 1100 1250 3.0 Vdc nAdc pF mVdc
0.062 in. 0.024 in. 99.5% alumina.
trr
REV 1
558
BAW156LT1
559
MOTOROLA
Common Cathode Silicon Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT416/SC90 package which is designed for low power surface mount applications, where board space is at a premium. Fast trr Low CD Available in 8 mm Tape and Reel
DAN222
SOT416/SC90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT
3 2 1

Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc 1 ANODE 2 CATHODE 3
DEVICE MARKING
DAN222 = N9
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C

Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. t = 1 S 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 A VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR Min 80 Max 0.1 1.2 3.5 4.0 Unit Adc Vdc Vdc pF ns
REV 1
560
DAN222
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
Figure 2. Reverse Current
0.9
0.8
0.7
0.6
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr tp
OUTPUT PULSE
trr IF t t
RL
10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 5.0 mA VR = 6 V RL = 100
561
MOTOROLA
Common Anode Silicon Dual Switching Diode

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT416/SC90 package which is designed for low power surface mount applications, where board space is at a premium. Fast trr Low CD Available in 8 mm Tape and Reel
DAP222
SOT416/SC90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT
3 2 1

Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc 1 CATHODE 2 ANODE 3
DEVICE MARKING
DAP222 = P9

Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. t = 1 S 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 A VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR Min 80 Max 0.1 1.2 3.5 4.0 Unit Adc Vdc Vdc pF ns
REV 1
562
DAP222
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
1.5
1.25
1.0
0.75
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr tp
OUTPUT PULSE
trr IF t t
RL
10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 5.0 mA VR = 6 V RL = 100
563
MOTOROLA
Single Silicon Switching Diode

This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC70 package which is designed for low power surface mount applications. Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel. Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel.
M1MA141KT1 M1MA142KT1
CATHODE 3
SC70/SOT323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V100 mA SURFACE MOUNT
ANODE NO CONNECTION 1 2
1 2

Rating Reverse Voltage M1MA141KT1 M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM(1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc Vdc Unit Vdc CASE 41902, STYLE 2 SC70/SOT323

Characteristic Reverse Voltage Leakage Current M1MA141KT1 M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Symbol IR
Condition VR = 35 V VR = 75 V
Min 40 80
Max 0.1 0.1 1.2 2.0 3.0
Unit Adc
VF VR
IF = 100 mA IR = 100 A
Vdc Vdc
CD trr(2)
VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
pF ns
REV 2
564
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
DEVICE MARKING EXAMPLE

Marking Symbol
Type No. Symbol 141K MH 142K MI
MHX
10 TA = 150C TA = 85C 1.0 TA = 125C
10 TA = 40C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
0.64
0.6
0.56
0.52
Figure 3. Diode Capacitance Motorola SmallSignal Transistors, FETs and Diodes Device Data 565
MOTOROLA
Common Anode Silicon Dual Switching Diode

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC70 package which is designed for low power surface mount applications. Fast trr, < 10 ns Low CD, < 15 pF Available in 8 mm Tape and Reel Use M1MA141/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE 3
M1MA141WAT1 M1MA142WAT1
SC70/SOT323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V100 mA SURFACE MOUNT
1 CATHODE
1 2

Rating Reverse Voltage M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage M1MA141WAT1 M1MA142WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 mAdc mAdc mAdc Vdc Unit Vdc CASE 41902, STYLE 4 SC70/SOT323

Characteristic Reverse Voltage Leakage Current M1MA141WAT1 M1MA142WAT1 Forward Voltage Reverse Breakdown Voltage M1MA141WAT1 M1MA142WAT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Symbol IR VF VR CD trr(2)
Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 A VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
Min 40 80
Max 0.1 0.1 1.2 15 10
Unit Adc
Vdc Vdc
pF ns
REV 2
566
OUTPUT PULSE
trr t

Marking Symbol
Type No. Symbol 141WA MN 142WA MO
MNX
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A)
10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
1.5
1.25
1.0
0.75
MOTOROLA
Common Cathode Silicon Dual Switching Diode

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC70 package which is designed for low power surface mount applications. Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE 3
M1MA141WKT1 M1MA142WKT1
SC70/SOT323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V100 mA SURFACE MOUNT
1 ANODE
1 2

Rating Reverse Voltage M1MA141WKT1 M1MA142WKT1 Peak Reverse Voltage M1MA141WKT1 M1MA142WKT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 mAdc mAdc mAdc Vdc Unit Vdc CASE 41902, STYLE 5 SC70/SOT323

Characteristic Reverse Voltage Leakage Current M1MA141WKT1 M1MA142WKT1 Forward Voltage Reverse Breakdown Voltage M1MA141WKT1 M1MA142WKT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Min 40 80
Max 0.1 0.1 1.2 2.0 3.0
Unit Adc
Vdc Vdc
pF ns
REV 2
568
OUTPUT PULSE
trr t

Marking Symbol
Type No. Symbol 141WK MT 142WK MU
MTX
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A)
10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
0.9
0.8
0.7
0.6
MOTOROLA
Single Silicon Switching Diodes

These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA151/2AT1 to order the 7 inch/3000 unit reel. Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.
M1MA151AT1 M1MA152AT1
ANODE 3
SC59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
2 1 CATHODE NO CONNECTION
2 1

Rating Reverse Voltage M1MA151AT1 M1MA152AT1 Peak Reverse Voltage M1MA151AT1 M1MA152AT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM(1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc Vdc Unit Vdc CASE 318D03, STYLE 4 SC59
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to + 150 Unit mW C C

Characteristic Reverse Voltage Leakage Current M1MA151AT1 M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Symbol IR
Min 40 80
Max 0.1 0.1 1.2 2.0 3.0
Unit Adc
VF VR
IF = 100 mA IR = 100 A
Vdc Vdc
CD trr(2)
pF ns
REV 3
570
M1MA151AT1 M1MA152AT1
OUTPUT PULSE
trr t
DEVICE MARKING
Marking Symbol
Type No. Symbol 151A MA 152A MB
MAX
571
MOTOROLA
Single Silicon Switching Diodes

These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
CATHODE 3
SC59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
2 ANODE
1 NO CONNECTION
2 1

Rating Reverse Voltage M1MA151KT1 M1MA152KT1 Peak Reverse Voltage M1MA151KT1 M1MA152KT1 Forward Current Peak Forward Current Peak Forward Surge Current IF IFM IFSM(1) VRM Symbol VR Value 40 80 40 80 100 225 500 mAdc mAdc mAdc Vdc Unit Vdc CASE 318D03, STYLE 2 SC59

Characteristic Reverse Voltage Leakage Current M1MA151KT1 M1MA152KT1 Forward Voltage Reverse Breakdown Voltage M1MA151KT1 M1MA152KT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Symbol IR
Min 40 80
Max 0.1 0.1 1.2 2.0 3.0
Unit Adc
VF VR
IF = 100 mA IR = 100 A
Vdc Vdc
CD trr(2)
pF ns
REV 3
572
OUTPUT PULSE
trr t

Marking Symbol
Type No. Symbol 151K MH 152K MI
MHX
573
MOTOROLA
Common Anode Silicon Dual Switching Diodes

These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. Fast trr, < 10 ns Low CD, < 15 pF Available in 8 mm Tape and Reel Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE 3
SC59 PACKAGE COMMON ANODE DUAL SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
2 CATHODE
2 1

Rating Reverse Voltage M1MA151WAT1 M1MA152WAT1 Peak Reverse Voltage M1MA151WAT1 M1MA152WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 mAdc mAdc mAdc Vdc Unit Vdc CASE 318D03, STYLE 5 SC59

Characteristic Reverse Voltage Leakage Current M1MA151WAT1 M1MA152WAT1 Forward Voltage Reverse Breakdown Voltage M1MA151WAT1 M1MA152WAT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Min 40 80
Max 0.1 0.1 1.2 15 10
Unit Adc
Vdc Vdc
pF ns
REV 3
574
OUTPUT PULSE
trr t

Marking Symbol
Type No. Symbol 151WA MN 152WA MO
MNX
575
MOTOROLA
Common Cathode Silicon Dual Switching Diodes

These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE 3
SC59 PACKAGE COMMON CATHODE DUAL SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
3 2
2 ANODE

Rating Reverse Voltage M1MA151WKT1 M1MA152WKT1 Peak Reverse Voltage M1MA151WKT1 M1MA152WKT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFSM(1) IFM IF VRM Symbol VR Value 40 80 40 80 100 150 225 340 500 750 mAdc mAdc mAdc Vdc Unit Vdc CASE 318D03, STYLE 3 SC59

Characteristic Reverse Voltage Leakage Current M1MA151WKT1 M1MA152WKT1 Forward Voltage Reverse Breakdown Voltage M1MA151WKT1 M1MA152WKT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. trr Test Circuit
Min 40 80
Max 0.1 0.1 1.2 2.0 3.0
Unit Adc
Vdc Vdc
pF ns
REV 3
576
OUTPUT PULSE
trr t

Marking Symbol
Type No. Symbol 151WK MT 152WK MU
MTX
577
MOTOROLA
Dual Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Low Forward Voltage 0.35 V @ IF = 10 mAdc
Anode 1 N/C 2 Cathode 3 6 Cathode 5 N/C 4 Anode
MBD54DWT1
CASE 419B 01, STYLE 6 SOT 363

DEVICE MARKING
MBD54DWT1 = BL

REV 1
578
MBD54DWT1

10
1 50C
1 25C 1.0 85C 25C 40C 55C
0.1 0.0

14 C T , TOTAL CAPACITANCE (pF) 12 10 8 6 4 2 0 0 5 10 15 20 25
30
579
MOTOROLA
Designed primarily for UHF mixer applications but suitable also for use in detector and ultrafast switching circuits. Supplied in an inexpensive plastic package for lowcost, highvolume consumer requirements. Also available in Surface Mount package. Low Noise Figure 6.0 dB Typ @ 1.0 GHz Very Low Capacitance Less Than 1.0 pF @ Zero Volts High Forward Conductance 0.5 Volts (Typ) @ IF = 10 mA
MBD101 MMBD101LT1
SILICON SCHOTTKY BARRIER DIODES
2 CATHODE
1 ANODE
1 2
3 CATHODE
1 ANODE
CASE 182 02, STYLE 1 (TO226AC)
MAXIMUM RATINGS
MBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PF 280 2.2 TJ Tstg +150 55 to +150 225 1.8 mW mW/C C C MMBD101LT1 Value 7.0 Unit Volts CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
1 2
DEVICE MARKING
MMBD101LT1 = 4M

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Forward Voltage(1) (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) Symbol V(BR)R CT VF IR Min 7.0 Typ 10 0.88 0.5 0.02 Max 1.0 0.6 0.25 Unit Volts pF Volts Adc
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
580
MBD101 MMBD101LT1
(TA = 25C unless noted)
1.0 0.7 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 0.5 0.2 0.1 0.07 0.05 VR = 3.0 Vdc 100 TA = 85C 10
TA = 40C 1.0 TA = 25C
0.02 0.01 0.1 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 130 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Reverse Leakage
1.0
11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5)
C, CAPACITANCE (pF)
0.9
9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0
0.8
0.7
0.6
1.0
2.0
3.0
4.0
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
PLO, LOCAL OSCILLATOR POWER (mW)
LOCAL OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS Note 1 CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).
UHF NOISE SOURCE H.P. 349A
DIODE IN TUNED MOUNT
NOISE FIGURE METER H.P. 342A
IF AMPLIFIER NF = 1.5 dB f = 30 MHz
Figure 5. Noise Figure Test Circuit
581
MOTOROLA
Dual Schottky Barrier Diodes

Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small sixleaded package. The SOT363 is ideal for lowpower surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons:
SOT363 Area (mm2) Max Package PD (mW) Device Count 4.6 120 2 SOT23 7.6 225 1
MBD110DWT1 MBD330DWT1 MBD770DWT1

Space Savings:
Package SOT363 1
SOT23
40%
SOT23
70%
Anode 1 N/C 2 Cathode 3
6 Cathode 5 N/C 4 Anode
The MBD110DW, MBD330DW, and MBD770DW devices are spinoffs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT23 devices. They are designed for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage
MAXIMUM RATINGS
Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 55 to +125 55 to +150 Unit Vdc
Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range
PF TJ Tstg
mW C C
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5
REV 1
582

Characteristic Reverse Breakdown Voltage (IR = 10 A) MBD110DWT1 MBD330DWT1 MBD770DWT1 CT MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 6.0 Vdc 0.02 13 9.0 0.25 200 200 0.9 0.5 1.5 1.0 A nAdc nAdc dB 0.88 1.0 pF Symbol V(BR)R 7.0 30 70 10 pF Min Typ Max Unit Volts
Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA)
583

TYPICAL CHARACTERISTICS MBD110DWT1
1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 Vdc 0.2 0.1 0.07 0.05 100
10 TA = 85C TA = 40C
1.0 TA = 25C MBD110DWT1
0.02 MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 130
0.1 0.3
0.4
0.5 0.6 VF, FORWARD VOLTAGE (VOLTS)
0.7
0.8
1.0
11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5)
C, CAPACITANCE (pF)
0.9
9 8 7 6 5 4 3 MBD110DWT1 2 4.0 1 0.1 0.2
0.8
0.7
MBD110DWT1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10
0.6
1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS)
LOCAL OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS Note 1 CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).
UHF NOISE SOURCE H.P. 349A
DIODE IN TUNED MOUNT
NOISE FIGURE METER H.P. 342A
IF AMPLIFIER NF = 1.5 dB f = 30 MHz
Figure 5. Noise Figure Test Circuit
584

2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500
t , MINORITY CARRIER LIFETIME (ps)
MBD330DWT1
MBD330DWT1 400 KRAKAUER METHOD 300
200
100
0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100
Figure 7. Minority Carrier Lifetime
10 MBD330DWT1 1.0 TA = 100C
100 MBD330DWT1 IF, FORWARD CURRENT (mA) TA = 40C 10 TA = 85C
IR, REVERSE LEAKAGE ( m A)
TA = 75C 0.1
0.01
TA = 25C
1.0 TA = 25C
0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30
0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
585

2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MBD770DWT1 MBD770DWT1 400 KRAKAUER METHOD 300
1.2
0.8
200
0.4
100
0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100
10 MBD770DWT1 1.0 TA = 100C
100 MBD770DWT1 IF, FORWARD CURRENT (mA)
10 TA = 85C TA = 40C
TA = 75C 0.1
1.0 TA = 25C
0.01
TA = 25C
0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50
586
MOTOROLA
Silicon Hot-Carrier Diodes

These devices are designed primarily for highefficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Extremely Low Minority Carrier Lifetime 15 ps (Typ) Very Low Capacitance 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage IR = 13 nAdc (Typ) MBD301, MMBD301
MBD301 MMBD301LT1
30 VOLTS SILICON HOTCARRIER DETECTOR AND SWITCHING DIODES
1 2

MBD301 Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ 55 to +125 Tstg 55 to +150 C 200 2.0 mW mW/C C MMBD301LT1 Value 30 Unit Volts
2 CATHODE
1 ANODE
3 1 2
DEVICE MARKING
MMBD301LT1 = 4T
3 CATHODE
1 ANODE

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 25 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 30 Typ 0.9 13 0.38 0.52 Max 1.5 200 0.45 0.6 Unit Volts pF nAdc Vdc Vdc
587
MBD301 MMBD301LT1
2.8 f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 500
400 KRAKAUER METHOD
300
200
100
0 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100
10
100
IR, REVERSE LEAKAGE (m A)
1.0
TA = 100C
10 TA = 85C TA = 40C
0.1
75C
1.0 TA = 25C
0.01
25C
0.001
0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
IF(PEAK)
CAPACITIVE CONDUCTION
IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION
SINUSOIDAL GENERATOR
BALLAST NETWORK (PADS)
PADS DUT
SAMPLING OSCILLOSCOPE (50 W INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
588
MOTOROLA
Silicon Hot-Carrier Diodes

These devices are designed primarily for highefficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Extremely Low Minority Carrier Lifetime 15 ps (Typ) Very Low Capacitance 1.0 pF @ VR = 20 V High Reverse Voltage to 70 Volts Low Reverse Leakage 200 nA (Max)
MBD701 MMBD701LT1
70 VOLTS HIGHVOLTAGE SILICON HOT CARRIER DETECTOR AND SWITCHING DIODES
1 2

MBD701 Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ 55 to +125 Tstg 55 to +150 C CASE 318 08, STYLE 8 SOT 23 (TO 236AB) 200 2.0 mW mW/C C
1 2 3
MMBD701LT1 Value 70 Unit Volts
2 CATHODE
1 ANODE
DEVICE MARKING
MMBD701LT1 = 5H
3 CATHODE
1 ANODE

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 70 Typ 0.5 9.0 0.42 0.7 Max 1.0 200 0.5 1.0 Unit Volts pF nAdc Vdc Vdc
589
MBD701 MMBD701LT1
2.0 f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 1.6 500
400 KRAKAUER METHOD
1.2
300
0.8
200
0.4
100
0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50
10
100
1.0
TA = 100C
10 TA = 85C TA = 40C
0.1
TA = 75C
1.0 TA = 25C
0.01
TA = 25C
0.001
0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0
IF(PEAK)
PADS DUT
590
MOTOROLA
Silicon Epicap Diodes

Designed for general frequency control and tuning applications; providing solidstate reliability in replacement of mechnaical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
3 1 Cathode Anode SC70/SOT323 3 Cathode SOT23 2 Cathode 1 Anode 1 Anode
MBV109T1 MMBV109LT1 * MV209*

* Motorola Preferred Devices
2632 pF VOLTAGE VARIABLE CAPACITANCE DIODES
1 2

3 1
TO92
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg 200 2.0 +125 55 to +150 200 1.6 mW mW/C C C
1
MBV109T1
MMBV109LT1 30 200
MV209
Unit Vdc mAdc
CASE 18202, STYLE 1 TO92 (TO226AC)
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 30 Typ 300 Max 0.1 Unit Vdc Adc ppm/C
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MBV109T1, MMBV109LT1, MV209 Min 26 Nom 29 Max 32
Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz Min 200
CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min 5.0 Max 6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
(Replaces MMBV109LT1/D)
591
MBV109T1 MMBV109LT1 MV209

40 36 Q, FIGURE OF MERIT 32 CT , CAPACITANCE pF 28 24 20 16 12 8 4 0 1 3 10 30 100 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25C VR = 3 Vdc TA = 25C 100 1000
Figure 1. DIODE CAPACITANCE
Figure 2. FIGURE OF MERIT
C t , DIODE CAPACITANCE (NORMALIZED)
100 60 I R , REVERSE CURRENT (nA) 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 VR = 20 Vdc
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj
0.02 0.01 0.006 40 20 0 +20 +40 +60 +80 +100 +120 +140
0.002 0.001 60
TA, AMBIENT TEMPERATURE
TA, AMBIENT TEMPERATURE
Figure 3. LEAKAGE CURRENT
Figure 4. DIODE CAPACITANCE
NOTES ON TESTING AND SPECIFICATIONS

1. CR is the ratio of Ct measured at 3.0 Vdc divided by Ct measured at 25 Vdc.
592
MOTOROLA
Monolithic Diode Arrays

Surface Mount Diode Arrays
These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in highcurrent, fastswitching coredriver applications. These arrays offer many of the advantages of integrated circuits such as highdensity packaging and improved reliability. These advantages result from such factors as fewer glasstometal seals. Designed for Use in Computers and Peripheral Equipment Applications Include: Magnetic Cores ThinFilm Memories PlatedWire Memories Decoding or Encoding Applications MAXIMUM RATINGS
Rating Peak Reverse Voltage SteadyState Reverse Voltage Peak Forward Current 25C Continuous Forward Current Power Dissipation Derating Factor Operating Temperature Storage Temperature Range Symbol VRM VR IFM IF PD TA Tstg Value 50 50 500 400 500 4.0 65 to +150 65 to +150 Unit Vdc Vdc mAdc mAdc mW mW/C C C
MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109
14 1
CASE 751A03 SO14
SO14 PIN DIAGRAM 1

Dual 10 Diode Array 11 3 1
2
16 Diode Array
8 12
10 13 14
7 2 14
11 12
MMAD130
NC Pin 4, 6, 10, 13 MMAD1103
3
8 Diode Array (Common Cathode) 14 1
4
Dual 8 Diode Array 8
5
2 3 5 7 8 9 11 12 7 6 7 Diode Array (Independent) 5 4 3 2 1 14 NC Pin 6, 13 MMAD1107 2 3 11 12 4 5 9 10 7
NC Pin 1, 4, 6, 10, 13 MMAD1105
10 11 12 13 MMAD1109
14
REV 1
593

Device MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Description Dual 10 Diode Array 16 Diode Array 8 Diode Array Common Cathode Dual 8 Diode Array 7 Diode Array Diagram 1 2 3 4 5
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature)

Limit Characteristic Reverse Breakdown Voltage(1) (IR = 10 Adc) Static Reverse Current (VR = 40 Vdc) Static Forward Voltage (IF = 100 mAdc) (IF = 500 mAdc)(2) Peak Forward Voltage(3) (IF = 500 mAdc) Symbol V(BR) 50 IR VF VFM 5.0 1.2 1.6 Vdc 0.1 Vdc Adc Min Max Unit Vdc
SWITCHING CHARACTERISTICS (@ 25C FreeAir Temperature)

Characteristic Forward Recovery Time (IF = 500 mAdc) Reverse Recovery Time (IF = 200 mA, IRM = 200 mA, RL = 100 W, irr = 20 mA) Symbol tfr trr Typical Value 20 8.0 Unit ns ns
NOTES: 1. This parameter must be measured using pulse techniques. PW = 100 s, duty cycle 20%. 2. This parameter is measured using pulse techniques. PW = 300 s, duty cycle 2.0%. Read time is 90 s from the leading edge of the pulse. 3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
1000
100 TA = +25C 10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 1. Typical Characteristics Static Forward Voltage
594

TEST PROCEDURE FOR MULTIPLE DIODES
1.0. REVERSE BIAS TESTING 1.1. LEAKAGE Regardless of device configuration type, when testing any reverse bias condition, the forcing power supply must be applied only to the uncommon terminal of the pair. As in Figure 1, this would be pins 1 and 14. This can be referred as the high side of the test circuit. The low side of the test circuit must be connected to the common terminal of the pair which in most testers is where the current measurement is taken. This method is used to eliminate the possibility of degrading the diode in that pair which is not under test. Diode arrays with multiple pairs such as the MMAD1103, also have leakage paths in the die between common terminals of the pairs. To isolate the device under test so that the leakage from the other pairs in the package do not affect the test result, the leakage current from the common terminals of the pairs not under test must be shunted to measurement common. Figure 1 shows the test configuration for both of these cases.
1
IF
Vmeas 14 2 3 5 7 8 9 11 12
IF +
Vmeas 14 2 3 5 7 8 9 11 12
Figure 2 2.1. KELVIN CONNECTION To achieve the best possible accuracy when testing bias currents over 10 mA, Kelvin connection to the leads of the device under test is mandatory. True Kelvin connection dictates that two test connections are made directly to the leads of the device. One is for power which is the bias supply, and the other is for sense which is for the measurement circuit. Kelvin connections are used to eliminate the effects of the connection resistance between the lead of the device and the contacts of the test handler and/or hand fixture. Figure 3 is an example of Kelvin connection.
VR
11
12
14
BIAS A
2 3 5 7 8 9 11 12
TEST HI MEAS
TEST LO
VR
14
Figure 1 Figure 3 1.2. BREAKDOWN It is not recommended to test breakdown on these devices due to the possibility of degrading the device. Breakdown may be checked on a curve tracer but extreme caution should be used. 2.0. FORWARD BIAS TESTING Diode arrays are designed with the pairs in parallel; therefore, care must be taken to prevent the other diodes in the array from affecting the measured value of the diode under test. Figure 2 illustrates the proper technique to measure only the correct value of the diode under test. 2.2. PULSE TESTING When testing bias currents over 10 mA, pulse testing should be used to minimize thermal drift of the measured value. The pulse width of a pulse test is approximately 300 s to 380 s. 3.0. TESTING PROTOCOL 3.1. TEST TYPES When testing in sequence all of the electrical characteristics, all reverse bias conditions should be tested before the forward bias conditions are tested. 3.2. BIASING MAGNITUDES Tests of the same test type should be grouped together with the bias conditions in ascending order. For example: VF @ 10 mA < 0.6 V VF @ 50 mA < 0.8 V VF @ 100 mA < 1 V VF @ 500 mA < 1.5 V Motorola SmallSignal Transistors, FETs and Diodes Device Data 595
MOTOROLA
Monolithic Diode Array
Surface Mount Isolated 8Diode Array

This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in highcurrent, fastswitching coredriver applications. This array offers the advantages of an integrated circuit with highdensity packaging and improved reliability. This advantage results from such factors as fewer connections, more uniform device parameters, smaller size, less weight and fewer glasstometal seals. Designed for use in Computers and Peripheral Equipment Applications Include: Magnetic Cores ThinFilm Memories PlatedWire Memories Decoding or Encoding
MMAD1108
16 1
CASE 751B05 SO16
MAXIMUM RATINGS
Rating Peak Reverse Voltage SteadyState Reverse Voltage Peak Forward Current 25C Continuous Forward Current Power Dissipation Derating Factor Operating Temperature Storage Temperature Range Symbol VRM VR IFM IF PD TA Tstg Value 50 50 500 400 500 4.0 65 to +150 65 to +150 Unit Vdc Vdc mAdc mAdc mW mW/C C C
PIN CONNECTION DIAGRAM

1 2 3 4 5 6 7 8
16
15 14 13 12 11 10
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature)

Limit Characteristic Reverse Breakdown Voltage(1) (IR = 10 Adc) Static Reverse Current (VR = 40 Vdc) Static Forward Voltage (IF = 100 mAdc) (IF = 500 mAdc)(2) Peak Forward Voltage(3) (IF = 500 mAdc) Symbol V(BR) IR VF VFM 1.2 1.6 5.0 Vdc Min 50 Max 0.1 Unit Vdc Adc Vdc
NOTES: 1. This parameter must be measured using pulse techniques. PW = 100 s, duty cycle 20%. 2. This parameter is measured using pulse techniques. PW = 300 s, duty cycle 2.0%. Read time is 90 s from the leading edge of the pulse. 3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
REV 1
596
MMAD1108
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature) (Continued)
Characteristic Symbol Typical Value Unit
SWITCHING CHARACTERISTICS (@ 25C FreeAir Temperature)

Forward Recovery Time (IF = 500 mAdc) Reverse Recovery Time (IF = 200 mA, IRM = 200 mA, RL = 100 W, irr = 20 mA) tfr trr 20 8.0 ns ns
1000
100 TA = +25C 10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 1. Typical Characteristics Static Forward Voltage
597
MMAD1108
TEST PROCEDURE FOR MULTIPLE DIODES
1.0. REVERSE BIAS TESTING 1.1. LEAKAGE Regardless of device configuration type, when testing any reverse bias condition, the forcing power supply must be applied only to the uncommon terminal of the pair. As in Figure 1, this would be pins 1 and 14. This can be referred as the high side of the test circuit. The low side of the test circuit must be connected to the common terminal of the pair which in most testers is where the current measurement is taken. This method is used to eliminate the possibility of degrading the diode in that pair which is not under test. Diode arrays with multiple pairs such as the MMAD1103, also have leakage paths in the die between common terminals of the pairs. To isolate the device under test so that the leakage from the other pairs in the package do not affect the test result, the leakage current from the common terminals of the pairs not under test must be shunted to measurement common. Figure 1 shows the test configuration for both of these cases.
1
IF
Vmeas 14 2 3 5 7 8 9 11 12
IF +
Vmeas 14 2 3 5 7 8 9 11 12
Figure 2 2.1. KELVIN CONNECTION To achieve the best possible accuracy when testing bias currents over 10 mA, Kelvin connection to the leads of the device under test is mandatory. True Kelvin connection dictates that two test connections are made directly to the leads of the device. One is for power which is the bias supply, and the other is for sense which is for the measurement circuit. Kelvin connections are used to eliminate the effects of the connection resistance between the lead of the device and the contacts of the test handler and/or hand fixture. Figure 3 is an example of Kelvin connection.
VR
11
12
14
BIAS A
2 3 5 7 8 9 11 12
TEST HI MEAS
TEST LO
VR
14
Figure 1 Figure 3 1.2. BREAKDOWN It is not recommended to test breakdown on these devices due to the possibility of degrading the device. Breakdown may be checked on a curve tracer but extreme caution should be used. 2.0. FORWARD BIAS TESTING Diode arrays are designed with the pairs in parallel; therefore, care must be taken to prevent the other diodes in the array from affecting the measured value of the diode under test. Figure 2 illustrates the proper technique to measure only the correct value of the diode under test. 2.2. PULSE TESTING When testing bias currents over 10 mA, pulse testing should be used to minimize thermal drift of the measured value. The pulse width of a pulse test is approximately 300 s to 380 s. 3.0. TESTING PROTOCOL 3.1. TEST TYPES When testing in sequence all of the electrical characteristics, all reverse bias conditions should be tested before the forward bias conditions are tested. 3.2. BIASING MAGNITUDES Tests of the same test type should be grouped together with the bias conditions in ascending order. For example: VF @ 10 mA < 0.6 V VF @ 50 mA < 0.8 V VF @ 100 mA < 1 V VF @ 500 mA < 1.5 V 598 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
Dual Hot Carrier Mixer Diodes

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultrafast switching circuits. Very Low Capacitance Less Than 1.0 pF @ Zero Volts Low Forward Voltage 0.5 Volts (Typ) @ IF = 10 mA
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1

3 1 2

Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC
1 ANODE
3 CATHODE/ANODE
2 CATHODE
MMBD352LT1 CASE 318 08, STYLE 11 SOT 23 (TO 236AB)
1 CATHODE
3 CATHODE/ANODE
2 ANODE
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 3 CATHODE
ANODE 1 2 ANODE

OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 VF IR C 0.25 10 1.0 pF 0.60 V
mA
ANODE 3
CATHODE 1
0.062 in. 0.024 in. 99.5% alumina.
2 CATHODE MMBD355LT1 CASE 318 08, STYLE 12 SOT 23 (TO 236AB)
REV 2
599
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1

100 I F, FORWARD CURRENT (mA) 1.0
10 TA = 40C
C, CAPACITANCE (pF) 0.8
TA = 85C
0.9
0.8
1.0 TA = 25C
0.7
0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
0.6 0 1.0 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS)
5100
MOTOROLA
Dual Schottky Barrier Diode

These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultrafast switching circuits. Very Low Capacitance Less Than 1.0 pF @ Zero Volts Low Forward Voltage 0.5 Volts (Typ) @ IF = 10 mA
MMBD352WT1
3 1 2
1 ANODE
3 CATHODE/ANODE
2 CATHODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC
MMBD352WT1 CASE 419 02, STYLE 9 SOT 323 (SC 70)
DEVICE MARKING
MMBD352WT1 = M5

OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 VF IR C 0.25 10 1.0 pF 0.60 V
mA
0.062 in. 0.024 in. 99.5% alumina.
5101
MMBD352WT1
100 I F, FORWARD CURRENT (mA) 1.0
10 TA = 40C
C, CAPACITANCE (pF) 0.8
TA = 85C
0.9
0.8
1.0 TA = 25C
0.7
0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
5102
MOTOROLA
Dual Hot-Carrier Diodes

These devices are designed primarily for highefficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for lowcost, highvolume consumer and industrial/commercial requirements. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage
MMBD452LT1
3 1 2

Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 225 1.8 TJ 55 to +125 Tstg 55 to +150 C mW mW/C C Value 30 Unit Volts 1 ANODE 2 CATHODE 3 CATHODE/ANODE
DEVICE MARKING
MMBD452LT1 = 5N

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 15 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 25 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 30 Typ 0.9 13 0.38 0.52 Max 1.5 200 0.45 0.6 Unit Volts pF nAdc Vdc Vdc
5103
MMBD452LT1
2.8 f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 500
400 KRAKAUER METHOD
300
200
100
10
100
1.0
TA = 100C
10 TA = 85C TA = 40C
0.1
75C
1.0 TA = 25C
0.01
25C
0.001
0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
IF(PEAK)
PADS DUT
5104
MOTOROLA
Common Anode Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Extremely Fast Switching Speed Extremely Low Forward Voltage 0.28 Volts (Typ) @ IF = 1 mAdc
MMBD717LT1
20 VOLT SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODES
ANODE 3
CATHODE 1 2 CATHODE
1 2
CASE 419 02, STYLE 2 SOT 323 (SC 70)

DEVICE MARKING
MMBD717LT1 = B3

Characteristic Reverse Breakdown Voltage (IR = 10 A) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (VR = 10 V) Forward Voltage (IF = 1.0 mAdc) Symbol V(BR)R CT IR VF Min 20 Typ 2.0 0.05 0.28 Max 2.5 1.0 0.37 Unit Volts pF Adc Vdc
REV 2
5105
MMBD717LT1
5106
MOTOROLA
High-Speed Switching Diode

3 CATHODE 1 ANODE
MMBD914LT1
3 1
MAXIMUM RATINGS
DEVICE MARKING
MMBD914LT1 = 5D

OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CT VF trr 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 100 Vdc
0.062 in. 0.024 in. 99.5% alumina.
5107
MMBD914LT1

100 I F, FORWARD CURRENT (mA) TA = 85C 10 10 TA = 150C I R , REVERSE CURRENT (m A) TA = 40C 1.0 TA = 125C
TA = 25C 1.0
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
0.68
C D , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
5108
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching

MMBD1000LT1
3 1 2
CASE 318-08, STYLE 8 SOT-23 (TO-236AB) 3 CATHODE 1 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc
1
MMBD2000T1
3
mA
DEVICE MARKING
MMBD1000LT1 = AY MMBD2000T1 = DH MMBD3000T1 = XP MMSD1000T1 = 4K
CASE 419-02, STYLE 2 SC70/SOT323 3 CATHODE 1 ANODE
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Derate above 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Thermal Resistance Junction to Ambient MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA C/W 556 833 TJ, Tstg 55 to +150 C
1
MMBD3000T1 Max Unit mW

2 1 3
CASE 318D-04, STYLE 2 SC59 mW/C 3 CATHODE 2 ANODE
MMSD1000T1
2
CASE 425-04, STYLE 1 SOD123 1 CATHODE 2 ANODE
REV 1
5109

Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 A) Reverse Voltage Leakage Current (VR = 75 V) Forward Voltage (IF = 1.0 mA) Forward Voltage (IF = 10 mA) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA) (Figure 1) V(BR) IR VF CD trr 30 500 850 950 2.0 3.0 V pA mV pF s Symbol Min Max Unit
5110
MOTOROLA
Switching Diode

MMBD1005LT1
3 1 2
MMBD2005T1
MAXIMUM RATINGS
1 2
DEVICE MARKING
MMBD1005LT1 = A3 MMBD2005T1 = DI MMBD3005T1 = XQ MMBD3005T1
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Derate above 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Thermal Resistance Junction to Ambient MMBD1005LT1, MMBD3005T1 MMBD2005T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW CASE 318D-04, STYLE 5 SC59 mW/C C/W
2 1
TJ, Tstg
REV 1
5111

5112
MOTOROLA
Switching Diode

MMBD1010LT1
3 1 2
MAXIMUM RATINGS
MMBD2010T1
3 1 2
DEVICE MARKING
MMBD1010LT1 = A5 MMBD2010T1 = DP MMBD3010T1 = XS
MMBD3010T1
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Derate above 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Thermal Resistance Junction to Ambient MMBD1010LT1, MMBD3010T1 MMBD2010T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW
2 1 3
mW/C C/W
CASE 318D-04, STYLE 3 SC59
TJ, Tstg
REV 1
5113

5114
MOTOROLA
Monolithic Dual Switching Diodes

MMBD2835LT1 MMBD2836LT1
3 1 2

Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc
DEVICE MARKING
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X

OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 Adc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2835LT1 MMBD2836LT1 MMBD2835LT1 MMBD2836LT1 CT VF V(BR) IR 35 75 100 100 4.0 1.0 1.0 1.2 4.0 pF Vdc Vdc nAdc
0.062 in. 0.024 in. 99.5% alumina.
trr
ns
REV 1
5115
CURVES APPLICABLE TO EACH CATHODE

TA = 25C 1.0
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
0.001
10
20
30
40
50
1.75
1.50
1.25
1.00
5116
MOTOROLA
Monolithic Dual Switching Diodes


Rating Peak Reverse Voltage D.C. Reverse Voltage Peak Forward Current Average Rectified Current MMBD2837LT1 MMBD2838LT1 Symbol VRM VR IFM IO Value 75 30 50 450 300 150 100 Unit Vdc Vdc mAdc mAdc CASE 318 08, STYLE 9 SOT 23 (TO 236AB)
1 2
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2837LT1 MMBD2838LT1 MMBD2837LT1 MMBD2838LT1 CT VF V(BR) IR 0.1 0.1 4.0 1.0 1.0 1.2 4.0 pF Vdc 35 75 Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
trr
ns
REV 1
5117
100 I F, FORWARD CURRENT (mA) TA = 85C 10
10 TA = 150C I R , REVERSE CURRENT (m A) TA = 40C 1.0 TA = 125C
TA = 25C 1.0
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
0.001
10
20
30
40
50
0.9
0.8
0.7
0.6
5118
MOTOROLA
Switching Diode
MMBD6050LT1
3 CATHODE
1 ANODE
1 2
MAXIMUM RATINGS
DEVICE MARKING
MMBD6050LT1 = 5A

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR VF 0.55 0.85 trr C 0.7 1.1 4.0 2.5 ns pF 70 0.1 Vdc Adc Vdc
0.062 in. 0.024 in. 99.5% alumina.
REV 1
5119
MMBD6050LT1
TA = 25C 1.0
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
0.001
10
20
30
40
50
0.68
0.64
0.60
0.56
5120
MOTOROLA

MMBD6100LT1
3 1 2

DEVICE MARKING
MMBD6100LT1 = 5BM

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.85 trr C 0.7 1.1 4.0 2.5 ns pF 70 0.1 Vdc Adc Vdc
1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3
0.062 in. 0.024 in. 99.5% alumina.
5121
MMBD6100LT1
TA = 25C 1.0
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
0.001
10
20
30
40
50
0.9
0.8
0.7
0.6
5122
MOTOROLA

1 ANODE 3 CATHODE/ANODE 2 CATHODE
MMBD7000LT1
3 1 2

Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc CASE 318 08, STYLE 11 SOT 23 (TO 236AB)
DEVICE MARKING
MMBD7000LT1 = M5C

OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR IR2 IR3 VF 0.55 0.67 0.75 trr C 0.7 0.82 1.1 4.0 1.5 ns pF 100 1.0 3.0 100 Vdc Vdc Adc
0.062 in. 0.024 in. 99.5% alumina.
5123
MMBD7000LT1
TA = 25C 1.0
0.1
TA = 85C
TA = 55C 0.01 TA = 25C
0.001
10
20
30
40
50
0.68
0.64
0.60
0.56
5124
MOTOROLA
Silicon Tuning Diode

This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio
MMBV105GLT1
30 VOLT VOLTAGE VARIABLE CAPACITANCE DIODE
3 1 2
3 Cathode
1 Anode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 55 to +150 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV105GLT1 = M4E

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 28 Vdc) CT VR = 25 Vdc, f = 1.0 MHz pF Min MMBV105GLT1 1.5 Max 2.8 Symbol V(BR)R IR Min 30 Max 50 Unit Vdc nAdc
Device Type
Q VR = 3.0 Vdc f = 50 MHz Typ 250 Min 4.0
CR C3/C25 f = 1.0 MHz Max 6.5
REV 1
5125
MMBV105GLT1
20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25C VR = 3 Vdc TA = 25C 100 1000
Figure 2. Figure of Merit
CT , DIODE CAPACITANCE (NORMALIZED)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
5126
MOTOROLA

These devices are designed for general frequency control and tuning applications. They provide solidstate reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package
3 Cathode SOT23 1 Anode
MMBV409LT1 MV409
VOLTAGE VARIABLE CAPACITANCE DIODES
2 Cathode
TO92
1 Anode
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg +125 55 to +150 225 1.8 mW mW/C C C MBV409 MMBV409LT1 20 200 Unit Vdc mAdc
1 2
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 20 Typ 300 Max 0.1 Unit Vdc Adc ppm/C
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV409LT1, MV409 Min 26 Nom 29 Max 32
CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min 1.5 Max 1.9
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.
5127
MMBV409LT1 MV409
40 C T, DIODE CAPACITANCE (pF) 1000
Q, FIGURE OF MERIT
32 f = 1.0 MHz TA = 25C
VR = 3 Vdc TA = 25C 100
24
16
8 10
10
20
30
100
10
100 f, FREQUENCY (MHz)
1000
C t , DIODE CAPACITANCE (NORMALIZED)
100 60 I R , REVERSE CURRENT (nA) 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 VR = 15 Vdc
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
0.02 0.01 0.006 40 20 0 +20 +40 +60 +80 +100 +120 +140
0.002 0.001 60
5128
MOTOROLA

This device is designed for FM tuning, general frequency control and tuning, or any topoftheline application requiring backtoback diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT23 plastic package for high volume, pick and place assembly requirements. High Figure of Merit Q = 150 (Typ) @ VR = 2.0 Vdc, f = 100 MHz Guaranteed Capacitance Range Dual Diodes Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching Guaranteed 1.0% (Max) Over Specified Tuning Range
1 3 2
MMBV432LT1
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
3 1 2
MAXIMUM RATINGS (Each Diode)

Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 14 200 225 1.8 +125 55 to +125 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV432LT1 = M4B

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 9.0 Vdc) Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) Capacitance Ratio C2/C8 (f = 1.0 MHz) Figure of Merit (VR = 2.0 Vdc, f = 100 MHz) Symbol V(BR)R IR CT CR Q Min 14 43 1.5 100 Typ 150 Max 100 48.1 2.0 Unit Vdc nAdc pF
REV 1
5129
MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 50 Q, FIGURE OF MERIT 450 550
350
30 20 f = 1.0 MHz TA = 25C
250 TA = 25C f = 100 MHz
150
10
10
50
10

2000 1000 Q, FIGURE OF MERIT 500 VR = 2.0 Vdc TA = 25C 1.06
Figure 2. Figure of Merit versus Voltage
1.04 VR = 2.0 Vdc 1.02 VR = 4.0 Vdc 1.00
200 100 50 20 10
0.98
f = 1.0 MHz
20
30
50 70 100
200 300
0.96 75
50
25
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)

10 5 I R , REVERSE CURRENT (nA) 2 1 0.5 0.2 0.1 0.05 TA = 25C 0.02 0.01 0 2 4 6 8 TA = 75C TA = 125C
Figure 4. Diode Capacitance versus Temperature
10
12
14
Figure 5. Reverse Current versus Reverse Voltage
5130
MOTOROLA

This device is designed for FM tuning, general frequency control and tuning, or any topoftheline application requiring backtoback diode configuration for minimum signal distortion and detuning. This device is supplied in the SOT23 plastic package for high volume, pick and place assembly requirements. High Figure of Merit Q = 450 (Typ) @ VR = 3.0 Vdc, f = 50 MHz Guaranteed Capacitance Range Dual Diodes Save Space and Reduce Cost Surface Mount Package Available in 8 mm Tape and Reel Monolithic Chip Provides Improved Matching Hyper Abrupt Junction Process Provides High Tuning Ratio
MMBV609LT1
3 1 2
MAXIMUM RATINGS (Each Diode)

DEVICE MARKING
MMBV609LT1 = 5L

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Diode Capacitance (VR = 3.0 Vdc, f = 1.0 MHz) Capacitance Ratio C3/C8 (f = 1.0 MHz) Figure of Merit (VR = 3.0 Vdc, f = 50 MHz) Symbol V(BR)R IR CT CR Q Min 20 26 1.8 250 Typ 450 Max 10 32 2.4 Unit Vdc nAdc pF
5131
MMBV609LT1
50 CT , DIODE CAPACITANCE (pF) 1000
Q, FIGURE OF MERIT
40
f = 1.0 MHz TA = 25C
VR = 3 Vdc TA = 25C 100
30
20
10
10
20
30
40
10
10
100 f, FREQUENCY (MHz)
1000
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
5132
MOTOROLA

This device is designed for 900 MHz frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods. Controlled and Uniform Tuning Ratio Available in Surface Mount Package Available in 8 mm Tape and Reel
MMBV809LT1
4.56.1 pF VOLTAGE VARIABLE CAPACITANCE DIODE

1 ANODE 3 CATHODE
3 1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Total Power Dissipation(1) @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range 1. FR5 Board 1.0 x 0.75 x 0.62 in. Symbol VR IF PD TJ Tstg Value 20 20 225 1.8 +125 55 to +125 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV809LT1 = 5K

Characteristic All Types Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc) Ct, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MMBV809LT1 Min 4.5 Typ 5.3 Max 6.1 Symbol V(BR)R IR Min 20 Typ Max 50 Unit Vdc nAdc
Q, Figure of Merit VR = 3.0 Vdc f = 500 MHz Typ 75
CR, Capacitance Ratio C2/C8 f = 1.0 MHz(2) Min 1.8 Max 2.6
2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 Vdc.
REV 1
5133
MMBV809LT1
10 9 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 10 0.1 1.0 f, FREQUENCY (GHz) 10 VR = 3 Vdc TA = 25C 100 1000
R S , SERIES RESISTANCE (MHz)
VR = 3.0 Vdc f = 1.0 MHz 800
1000
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
600
400 0 0.2 0.4 0.6 0.8 1.0 1.2 f, FREQUENCY (GHz)
Figure 3. Series Resistance
5134
MOTOROLA

These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solidstate reliability in replacement of mechanical tuning methods. Also available in Surface Mount Package up to 33pF. High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance 10% Complete Typical Design Curves
3 Cathode SOT23 2 Cathode
1 Anode
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
6.8100 pF 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
3
TO92
1 Anode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg +150 55 to +150 225 1.8 mW mW/C C C
1 2
MV21xx
MMBV21xxLT1 30 200
Unit Vdc mAdc

1 2
DEVICE MARKING
MMBV2101LT1 = M4G MMBV2103LT1 = 4H MMBV2105LT1 = 4U MMBV2107LT1 = 4W MMBV2108LT1 = 4X MMBV2109LT1 = 4J

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 30 Typ 280 Max 0.1 Unit Vdc Adc ppm/C
REV 1
5135
CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMBV2101LT1/MV2101 MMBV2103LT1 MV2104 MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1/MV2108 MMBV2109LT1/MV2109 MV2111 MV2115 Min 6.1 9.0 10.8 13.5 19.8 24.3 29.7 42.3 90 Nom 6.8 10 12 15 22 27 33 47 100 Max 7.5 11 13.2 16.5 24.2 29.7 36.3 51.7 110
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 400 400 400 350 300 200 150 100 Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.6
TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the T1 suffix when ordering any of these devices in bulk.

1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = 65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: TCC C + CT() 85C)) 65T(65C) 85 106 CT(25C)
Accuracy limited by measurement of CT to 0.1 pF.
+ 2pfC G
(Boonton Electronics Model 33AS8 or equivalent). Use Lead Length 1/16.
5136

TYPICAL DEVICE CHARACTERISTICS
1000 500 C T , DIODE CAPACITANCE (pF) MV2115 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 MMBV2109LT1/MV2109 MMBV2105LT1/MV2105 MMBV2101LT1/MV2101 TA = 25C f = 1.0 MHz

1.040 NORMALIZED DIODE CAPACITANCE 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 75 50 NORMALIZED TO CT at TA = 25C VR = (CURVE) 25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc I R , REVERSE CURRENT (nA) 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 TA = 75C TA = 125C
TA = 25C
5.0
10
15
20
25
30
Figure 2. Normalized Diode Capacitance versus Junction Temperature

5000 3000 2000 MMBV2109LT1/MV2109 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 1000 500 300 200 100 MMBV2101LT1/MV2101 5000 3000 2000
MMBV2101LT1/MV2101
MV2115
MV2115 50 30 20 TA = 25C VR = 4.0 Vdc 20 MMBV2109LT1/MV2109
TA = 25C f = 50 MHz 20 30
10 10
100 30 50 70 f, FREQUENCY (MHz)
200
250
5137
MOTOROLA

This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solidstate reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio
MMBV3102LT1
22 pF (Nominal) 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE
3 Cathode
1 Anode
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 55 to +150 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV3102LT1 = M4C

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 30 Typ 300 Max 0.1 Unit Vdc Adc ppm/C
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV3102LT1 Min 20 Nom 22 Max 25
CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min 4.5 Typ 4.8
5138
MMBV3102LT1
40 Q, FIGURE OF MERIT (x 1000) 36 CT , DIODE CAPACITANCE (pF) 32 28 24 20 16 12 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25C 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TA = 25C f = 50 MHz
3.0
6.0
9.0
12
15
18
21
24
27
30
C T , DIODE CAPACITANCE (NORMALIZED)
100 I R , REVERSE CURRENT (nA)
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
10 VR = 20 Vdc 1.0
0.1
0.01
0.001 60
20
+20
+60
+100
+140
NOTES ON TESTING AND SPECIFICATIONS

1. CR is the ratio of CT measured at 3.0 Vdc divided by CT measured at 25 Vdc.
5139
MOTOROLA
Silicon Pin Diode

This device is designed primarily for VHF band switching applications but is also suitable for use in generalpurpose switching circuits. Supplied in a Surface Mount package. Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Capacitance 0.7 pF Typ at VR = 20 Vdc Very Low Series Resistance at 100 MHz 0.34 Ohms (Typ) @ IF = 10 mAdc
MMBV3401LT1
SILICON PIN SWITCHING DIODE
3 1
3 Cathode
1 Anode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD TJ Tstg Value 20 200 2.0 +125 55 to +150 Unit Vdc mW mW/C C C
DEVICE MARKING
MMBV3401LT1 = 4D

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Diode Capacitance (VR = 20 Vdc) Series Resistance (Figure 5) (IF = 10 mAdc, f = 100 MHz) Reverse Leakage Current (VR = 25 Vdc) Symbol V(BR)R CT RS IR Min 35 Typ Max 1.0 0.7 0.1 Unit Vdc pF Adc
REV 1
5140
MMBV3401LT1
1.6 R S , SERIES RESISTANCE (OHMS) I F , FORWARD CURRENT (mA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 16 0 0.5 0.6 0.7 0.8 0.9 1.0 TA = 25C 50
40
30 TA = 25C 20
10

20 C T , DIODE CAPACITANCE (pF) I R , REVERSE CURRENT ( A) 10 7.0 5.0 2.0 1.0 0.7 0.5 100 40 10 4.0 1.0 0.4 0.1 0.04 0.01 0.004 0.2 +3.0 0 3.0 6.0 9.0 12 15 18 21 24 27 0.001 60 20
TA = 25C
VR = 25 Vdc
+20
+60
+100
+140
5141
MOTOROLA
High Voltage Silicon Pin Diodes

These devices are designed primarily for VHF band switching applications but are also suitable for use in generalpurpose switching circuits. They are supplied in a costeffective plastic package for economical, highvolume consumer and industrial requirements. They are also available in surface mount. Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Series Resistance @ 100 MHz RS = 0.7 Ohms (Typ) @ IF = 10 mAdc Reverse Breakdown Voltage = 200 V (Min)
MMBV3700LT1 MPN3700
SILICON PIN SWITCHING DIODES
3 1 2
3 Cathode SOT23 2 Cathode TO92
1 Anode
1 Anode
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Total Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD 280 2.8 TJ Tstg +125 55 to +150 200 2.0 mW mW/C C C MPN3700 MMBV3700LT1 200 Unit Vdc
DEVICE MARKING
MMBV3700LT1 = 4R

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Diode Capacitance (VR = 20 Vdc, f = 1.0 MHz) Series Resistance (Figure 5) (IF = 10 mAdc) Reverse Leakage Current (VR = 150 Vdc) Reverse Recovery Time (IF = IR = 10 mAdc) Symbol V(BR)R CT RS IR trr Min 200 Typ 0.7 300 Max 1.0 1.0 0.1 Unit Vdc pF Adc ns
5142
MMBV3700LT1 MPN3700
3.2 R S , SERIES RESISTANCE (OHMS) TA = 25C I F , FORWARD CURRENT (mA) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2.0 4.0 6.0 8.0 10 12 14 16 800 700 600 500 400 300 200 100 0 0.7 0.8 0.9 1.0 TA = 25C

10 8.0 6.0 I R , REVERSE CURRENT ( A) 4.0 2.0 1.0 0.8 0.6 0.4 0.2 0.1 TA = 25C 100 40 10 4.0 1.0 0.4 0.1 0.04 0.01 0.004 0 10 20 30 40 50 0.001 60 20
C T , DIODE CAPACITANCE (pF)
VR = 15 Vdc
+20
+60
+100
+140
5143
MOTOROLA
SOD-123 Schottky Barrier Diodes

The MMSD301T1, and MMSD701T1 devices are spinoffs of our popular MMBD301LT1, and MMBD701LT1 SOT23 devices. They are designed for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage
1 Cathode 2 Anode
MMSD301T1 MMSD701T1
2 1
CASE 42504, STYLE 1 SOD123
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range MMSD301T1 MMSD701T1 Symbol VR PF TJ Tstg Value 30 70 225 55 to +125 55 to +150 Unit Vdc mW C C
DEVICE MARKING
MMSD301T1 = XT, MMSD701T1 = XH

Characteristic Reverse Breakdown Voltage (IR = 10 A) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 IR MMSD301T1 MMSD701T1 VF MMSD301T1 MMSD701T1 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 13 9.0 200 200 nAdc nAdc Vdc 0.9 0.5 1.5 1.0 0.9 0.5 1.5 1.0 pF Symbol V(BR)R 30 70 pF Min Typ Max Unit Volts
(Replaces MMSD101T1/D)
5144
MMSD301T1 MMSD701T1
TYPICAL CHARACTERISTICS MMSD301T1
2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500
MMSD301T1
MMSD301T1 400 KRAKAUER METHOD 300
200
100
0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100
10 MMSD301T1 1.0 TA = 100C
100 MMSD301T1 IF, FORWARD CURRENT (mA) TA = 40C 10 TA = 85C
TA = 75C 0.1
0.01
TA = 25C
1.0 TA = 25C
0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30
5145
MMSD301T1 MMSD701T1
TYPICAL CHARACTERISTICS MMSD701T1
2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MMSD701T1 MMSD701T1 400 KRAKAUER METHOD 300
1.2
0.8
200
0.4
100
0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100
10 MMSD701T1 1.0 TA = 100C
100 MMSD701T1 IF, FORWARD CURRENT (mA)
10 TA = 85C TA = 40C
TA = 75C 0.1
1.0 TA = 25C
0.01
TA = 25C
0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50
5146
MOTOROLA
Switching Diode
The switching diode has the following features: SOD123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time
1 Cathode 2 Anode
MMSD914T1
2 1
CASE 42504, STYLE 1 SOD123
MAXIMUM RATINGS
DEVICE MARKING
MMSD914T1 = 5D
Characteristic Total Device Dissipation FR5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C

OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Forward Voltage (IF = 10 mAdc) Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR) IR VF CD trr 100 25 5.0 1000 4.0 4.0 Vdc nAdc mAdc mVdc pF ns
REV 2
5147
MMSD914T1
100
10 TA = 150C
I R, REVERSE CURRENT ( A)
1.0
TA = 125C
10 TA = 85C TA = 40C
0.1
TA = 85C
1.0 TA = 25C
TA = 55C 0.01 TA = 25C
0.1 0.2
0.4
0.6
0.8
1.0
1.2
0.001
10
20
30
40
50
0.64
0.60
0.56
0.52
5148
MOTOROLA
Silicon Pin Diode

This device is designed primarily for VHF band switching applications but is also suitable for use in generalpurpose switching circuits. It is supplied in a costeffective TO92 type plastic package for economical, highvolume consumer and industrial requirements. Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability Low Series Resistance @ 100 MHz RS = 0.7 Ohms (Typ) @ IF = 10 mAdc Sturdy TO92 Style Package for Handling Ease
1 Anode 2 Cathode
MPN3404
SILICON PIN SWITCHING DIODE
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD TJ Tstg Value 20 400 4.0 +125 55 to +150 Unit Vdc mW mW/C C C

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Diode Capacitance (VR = 15 Vdc, f = 1.0 MHz) Series Resistance (Figure 5) (IF = 10 mAdc) Reverse Leakage Current (VR = 15 Vdc) Symbol V(BR)R CT RS IR Min 20 Typ 1.3 0.7 Max 2.0 0.85 0.1 Unit Vdc pF Adc
5149
MPN3404
1.8 R S , SERIES RESISTANCE (OHMS) I F , FORWARD CURRENT (mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 0.5 0.6 0.7 0.8 0.9 1.0 50
40
30 TA = 25C 20
10
2.0
4.0
6.0
8.0
10
12
14

10 C T , DIODE CAPACITANCE (pF) I R , REVERSE CURRENT ( A) 7.0 5.0 4.0 3.0 2.0 TA = 25C 100 40 10 4.0 1.0 0.4 0.1 0.04 0.01 0.004 1.0 +3.0 0 3.0 6.0 9.0 12 15 18 21 0.001 60 20
VR = 15 Vdc
+20
+60
+100
+140
5150
MOTOROLA
Dual Switching Diode Common Cathode
MSD6100
Anode 1
2 Anode
1 2 3
3 Cathode

Rating Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current (Pulse Width = 10 sec) Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 100 200 500 625 5.0 55 to +135 Unit Vdc mAdc mAdc mW mW/C C

Characteristic Breakdown Voltage (I(BR) = 100 Adc) Reverse Current (VR = 100 Vdc) (VR = 50 Vdc) (VR = 50 Vdc, TA = 125C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) Capacitance (VR = 0) Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) Symbol V(BR) IR VF 0.55 0.67 0.75 C trr 0.7 0.82 1.1 1.5 4.0 pF ns 5.0 0.1 50 Vdc Min 100 Max Unit Vdc Adc
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C, Derate above 25C 8.0 mW/C, TJ = 65 to +150C, JC = 125C/W.
5151
MSD6100
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
0.9
0.8
0.7
0.6
5152
MOTOROLA
Dual Diode Common Anode
MSD6150
3 Anode
1 2 3
CASE 2904, STYLE 4 TO92 (TO226AA) Cathode 1 2 Cathode

Rating Reverse Voltage Peak Forward Recurrent Current Peak Forward Surge Current (Pulse Width = 10 sec) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VR IF IFM(surge) PD(1) TJ, Tstg(1) Value 70 200 500 625 5.0 55 to +135 Unit Vdc mAdc mAdc mW mW/C C

Characteristic Breakdown Voltage (I(BR) = 100 Adc) Reverse Current (VR = 50 Vdc) Forward Voltage (IF = 10 mAdc) Capacitance (VR = 0) Reverse Recovery Time (IF = IR = 10 mAdc, VR = 5.0 Vdc, irr = 1.0 mAdc) Symbol V(BR) IR VF C trr Min 70 Typ 0.80 5.0 Max 0.1 1.0 8.0 100 Unit Vdc Adc Vdc pF ns
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C, Derate above 8.0 mW/C, PD = 10 W @ TC = 25C, Derate above 80 mW/C, TJ, Tstg = 55 to +150C, JC = 12.5C/W, JA = 125C.
5153
MSD6150
Curves Applicable to Each Cathode
0.1
TA = 85C
1.0
TA = 25C
TA = 55C 0.01 TA = 25C
1.5
1.25
1.0
0.75
5154
MOTOROLA

This device is designed for FM tuning, general frequency control and tuning, or any topoftheline application requiring backtoback diode configurations for minimum signal distortion and detuning. High Figure of Merit Q = 140 (Typ) @ VR = 3.0 Vdc, f = 100 MHz Guaranteed Capacitance Range 3742 pF @ VR = 3.0 Vdc (MV104) Dual Diodes Save Space and Reduce Cost Monolithic Chip Provides Near Perfect Matching Guaranteed 1.0% (Max) Over Specified Tuning Range
MV104
1 2
Pin 1 A1 Pin 2
Pin 3 A2 C
CASE 29 04, STYLE 15 TO92 (TO 226AA)


Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current TA = 25C (VR = 30 Vdc) TA = 60C Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR TCC Min 32 Typ 280 Max 50 500 Unit Vdc nAdc ppm/C
CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Min 37 Max 42
Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz Min 100 Typ 140
CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min 2.5 Max 2.8
REV 1
5155
MV104
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 Q, FIGURE OF MERIT 450 550
40
350
250
20
TA = 25C f = 100 MHz
150
10 0.3
0.5
1.0
2.0
3.0
5.0 7.0 10
20
30
50
3.0
6.0
9.0
12
15
18
21
24
27
30
Figure 1. Diode Capacitance (Each Diode)

2000 1000 Q, FIGURE OF MERIT 500 VR = 3.0 Vdc TA = 25C 1.04 1.03 1.02
Figure 2. Figure of Merit versus Voltage
VR = 2.0 V 4.0 V
1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 NORMALIZED to CT at TA = 25C 30 V
200 100 50 20 10
20
30
50
70
100
200 300
f, FREQUENCY (MHz)

100 50 I R , REVERSE CURRENT (nA) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01
Figure 4. Diode Capacitance versus Temperature
TA = 125C
TA = 75C
TA = 25C
5.0
10
15
20
25
30
Figure 5. Reverse Current versus Reverse Voltage
5156
MOTOROLA
Silicon Hyper-Abrupt Tuning Diodes

These devices are designed with high capacitance and a capacitance change of greater than TEN TIMES for a bias change from 2.0 to 10 volts. They provide tuning over broad frequency ranges; tune AM radio broadcast band, general AFC and tuning applications in lower RF frequencies. High Capacitance: 120250 pF Large Capacitance Change with Small Bias Change Guaranteed High Q Available in Standard Axial Glass Packages
MV1403 MV1404 MV1405

120 250 pF 12 VOLTS HIGH TUNING RATIO VOLTAGEVARIABLE CAPACITANCE DIODES
2 Anode
1 Cathode
2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 10 Vdc, TA = 25C) Series Inductance (f = 250 MHz, Lead Length 1/16) Case Capacitance (f = 1.0 MHz, Lead Length 1/16) CT, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MV1403 MV1404 MV1405 Min 140 96 200 Nom 175 120 250 Max 210 144 300 Value 12 250 400 2.67 +125 65 to + 200 Unit Vdc mAdc mW mW/C C C
1
CASE 5102 (DO204AA)

Symbol V(BR)R IR LS CC Min 12 Typ 5.0 0.25 Max 0.1 Unit Vdc Adc nH pF
Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz Min 200 200 200
TR, Tuning Ratio C1/C10 f = 1.0 MHz Min C2/C10 f = 1.0 MHz Min 10 10 10
5157
MV1403 MV1404 MV1405

C T , DIODE CAPACITANCE (NORMALIZED) 500 C T , DIODE CAPACITANCE (pF) 300 200 MV1405 MV1403 MV1404 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 50 25 0 25 50 75 100 125 150 VR = 2 Vdc f = 1.0 MHz
TA = 25C f = 1 MHz
100 50 30 20 10 0
8 5 3 4 6 7 VR, REVERSE VOLTAGE (VOLTS)
10

1000 VR = 4 Vdc Q, FIGURE OF MERIT VR = 6 Vdc
Figure 2. Diode Capacitance versus Ambient Temperature
VR = 2 Vdc 100
10
50
100
5158
MOTOROLA

These epitaxial passivated tuning diodes are designed for AFC applications in radio, TV, and general electronictuning. Maximum Working Voltage of 20 V Excellent Q Factor at High Frequencies SolidState Reliability to Replace Mechanical Tuning Methods
MV1626 thru MV1650

6.8 100 pF 20 VOLTS VOLTAGEVARIABLE CAPACITANCE DIODES
2 Anode
1 Cathode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc, TA = 25C) Series Inductance (f = 250 MHz, Lead Length 1/16) Case Capacitance (f = 1.0 MHz, Lead Length 1/16) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 Min 10.8 13.5 16.2 19.8 29.7 73.8 90.0 Nom 12.0 15.0 18.0 22.0 33.0 82.0 100.0 Max 13.2 16.5 19.8 24.2 36.3 90.2 110.0 Value 20 250 400 2.67 +175 65 to + 200 Unit Vdc mAdc mW mW/C C C
CASE 5102 DO204AA (DO7)

Symbol V(BR)R IR LS CC Min 20 Typ 4.0 0.17 Max 0.10 Unit Vdc Adc nH pF
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 300 250 250 250 200 150 150
TR, Tuning Ratio C2/C20 f = 1.0 MHz Min 2.0 2.0 2.0 2.0 2.0 2.0 2.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2
5159
MOTOROLA

This silicon tuning diode is designed for use in high capacitance, hightuning ratio applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Guaranteed Capacitance Range The SOT-223 Package can be soldered using wave or reflow. SOT223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.
MV7005T1
SOT223 PACKAGE HIGH CAPACITANCE VOLTAGE VARIABLE DIODE SURFACE MOUNT
2 3
1 ANODE
2, 4 CATHODE
CASE 318E 04, STYLE 2 SOT 223 (TO 261AA)
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Junction Temperature Storage Temperature Range 1. FR-4 board, 0.0625 in2, 2 oz. copper. Symbol VR IF PD TJ Tstg Value 15 50 800 6.4 +125 55 to +125 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MV7005T1 = V7005

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 9.0 Vdc) Diode Capacitance (VR = 1.0 Vdc, f = 1.0 MHz) Capacitance Ratio C1/C9 (f = 1.0 MHz) Figure of Merit (VR = 1.0 Vdc, f = 1.0 MHz) Symbol V(BR)R IR CT CR Q Min 15 400 12 150 Max 100 520 Unit Vdc nAdc pF
REV 2
5160
MV7005T1
CT , DIODE CAPACITANCE (NORMALIZED) 1000 CT , DIODE CAPACITANCE (pF) 500 1.06 VR = 1.0 Vdc 1.04 1.02 1.00 0.98 0.96 0.94 50 VR = 9.0 Vdc
100
f = 1.0 MHz TA = 25C 10 1 3 5 7 9
25
+25
+50
+75
+100
+125

100 Q, FIGURE OF MERIT (x 100) 50
f = 1.0 MHz TA = 25C
10 5 3
10
20
5161
MOTOROLA
Silicon Hyper-Abrupt Tuning Diode

This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a broad frequency range from the AM broadcast band to 100 MHz. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. High Capacitance Large Capacitance Change with Small Bias Change Guaranteed High Q The SOT-223 Package can be soldered using wave or reflow. SOT223 package ensures level mounting which results in improved thermal conduction and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die.
1 ANODE 2, 4 CATHODE
MV7404T1
SOT223 PACKAGE HIGH TUNING RATIO VOLTAGE VARIABLE SURFACE MOUNT DIODE
2 3
CASE 318E 04, STYLE 2 SOT 223 (TO 261AA)

Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Operating and Storage Temperature Range Lead Temperature for Soldering Purposes, 1/6 from case Time in Solder Bath 1. FR-4 board, 0.0625 in2, 2 oz. copper. Symbol VR IF PD TJ, Tstg TL Value 12 250 800 6.4 55 to +125 260 10 Unit Vdc mAdc mW mW/C C C Sec
DEVICE MARKING
MV7404T1 = V7404

Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 10 Vdc, f = 1.0 MHz) Diode Capacitance (VR = 2.0 Vdc, f = 1.0 MHz) Figure of Merit (VR = 2.0 Vdc, f = 1.0 MHz) Tuning Ratio C2/C10 (f = 1.0 MHz) Symbol V(BR)R IR CT Q TR Min 12 96 200 10 Typ 120 Max 100 144 Unit Vdc nAdc pF
REV 1
5162
MV7404T1
C T , DIODE CAPACITANCE (NORMALIZED) 500 C T , DIODE CAPACITANCE (pF) 200 100 50 TA = 25C f = 1 MHz 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 50 25 0 25 50 75 100 125 150 VR = 2 Vdc f = 1.0 MHz
20 10 5
8 4 6 VR, REVERSE VOLTAGE (VOLTS)
10

1000 VR = 4 Vdc Q, FIGURE OF MERIT VR = 6 Vdc
VR = 2 Vdc 100
10
50
100
5163
5164
Section 6
Tape and Reel Specifications and Packaging Specifications
Tape and Reel Specifications 61
Tape and Reel Specifications and Packaging Specifications

Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the peelback cover tape. Two Reel Sizes Available (7 and 13) Used for Automatic Pick and Place Feed Systems Minimizes Product Handling EIA 481, 1, 2 SOD123, SC59, SC70/SOT323, SC70ML/SOT363, SOT23, TSOP6, in 8 mm Tape SOT223 in 12 mm Tape SO14, SO16 in 16 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD123
8 mm
SC59, SC70/SOT323, SOT23

8 mm
SC70ML/SOT363, TSOP6 T1 ORIENTATION

8 mm
SOT223
12 mm
SO14, 16
16 mm
SC70ML/SOT363 T2 ORIENTATION
8 mm
DIRECTION OF FEED
EMBOSSED TAPE AND REEL ORDERING INFORMATION

Tape Width (mm) 8 8 8 16 16 16 16 8 8 8 8 12 12 8 8 8 Pitch mm (inch) 4.0 0.1 (.157 .004) 4.0 0.1 (.157 .004) 8.0 0.1 (.315 .004) 8.0 0.1 (.315 .004) 4.0 0.1 (.157 .004) 4.0 0.1 (.157 .004) 8.0 0.1 (.315 .004) 4.0 0.1 (.157 .004) 4.0 0.1 (.157 .004) Reel Size mm (inch) 178 178 330 178 330 178 330 178 330 178 330 178 330 178 178 178 (7) (7) (13) (7) (13) (7) (13) (7) (13) (7) (13) (7) (13) (7) (7) (7) Devices Per Reel and Minimum Order Quantity 3,000 3,000 10,000 500 2,500 500 2,500 3,000 10,000 3,000 10,000 1,000 4,000 3,000 3,000 3,000 Device Suffix T1 T1 T3 R1 R2 R1 R2 T1 T3 T1 T3 T1 T3 T1 T2 T1
Package SC59 SC70/SOT323 SO14 SO16 SOD123 SOT23 SOT223 SC70ML/SOT363 TSOP6
EMBOSSED TAPE AND REEL DATA FOR DISCRETES

CARRIER TAPE SPECIFICATIONS
10 Pitches Cumulative Tolerance on Tape 0.2 mm ( 0.008) E Top Cover Tape A0 B0 P Embossment Center Lines of Cavity D1 For Components 2.0 mm x 1.2 mm and Larger
K t D
P0 P2
B1
K0 See Note 1
For Machine Reference Only Including Draft and RADII Concentric Around B0
User Direction of Feed * Top Cover Tape Thickness (t1) 0.10 mm (.004) Max.
Bar Code Label R Min Tape and Components Shall Pass Around Radius R Without Damage Bending Radius 10 Maximum Component Rotation 100 mm (3.937) Embossed Carrier
Embossment 1 mm Max
Typical Component Cavity Center Line Tape 1 mm (.039) Max Typical Component Center Line
Camber (Top View) Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
250 mm (9.843)
DIMENSIONS
Tape Size 8 mm 12 mm 16 mm 24 mm B1 Max 4.55 mm (.179) 8.2 mm (.323) 12.1 mm (.476) 20.1 mm (.791) D 1.5 + 0.1 mm 0.0 ( 0 9 + .004 (.059 004 0.0) D1 1.0 Min (.039) 1.5 mm Min (.060) E 1.75 0.1 mm (.069 .004) F 3.5 0.05 mm (.138 .002) 5.5 0.05 mm (.217 .002) 7.5 0.10 mm (.295 .004) 11.5 0.1 mm (.453 .004) K 2.4 mm Max (.094) 6.4 mm Max (.252) 7.9 mm Max (.311) 11.9 mm Max (.468) P0 4.0 0.1 mm (.157 .004) P2 2.0 0.1 mm (.079 .002) R Min 25 mm (.98) 30 mm (1.18) T Max 0.6 mm (.024) W Max 8.3 mm (.327) 12 .30 mm (.470 .012) 16.3 mm (.642) 24.3 mm (.957)
Metric dimensions govern English are in parentheses for reference only. NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max., NOTE 1: the component cannot rotate more than 10 within the determined cavity. NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders. NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.123.
EMBOSSED TAPE AND REEL DATA FOR DISCRETES

T Max Outside Dimension Measured at Edge
1.5 mm Min (.06) A 20.2 mm Min (.795)
13.0 mm 0.5 mm (.512 .002) 50 mm Min (1.969)
Full Radius
Inside Dimension Measured Near Hub
Size 8 mm 12 mm 16 mm 24 mm
A Max 330 mm (12.992) 330 mm (12.992) 360 mm (14.173) 360 mm (14.173)
G 8.4 mm + 1.5 mm, 0.0 (.33 + .059, 0.00) 12.4 mm + 2.0 mm, 0.0 (.49 + .079, 0.00) 16.4 mm + 2.0 mm, 0.0 (.646 + .078, 0.00) 24.4 mm + 2.0 mm, 0.0 (.961 + .070, 0.00)
T Max 14.4 mm (.56) 18.4 mm (.72) 22.4 mm (.882) 30.4 mm (1.197)
Reel Dimensions
Metric Dimensions Govern English are in parentheses for reference only
TO92 EIA, IEC, EIAJ Radial Tape in Fan Fold Box or On Reel
Radial tape in fan fold box or on reel of the reliable TO92 package are the best methods of capturing devices for automatic insertion in printed circuit boards. These methods of taping are compatible with various equipment for active and passive component insertion. Available in Fan Fold Box Available on 365 mm Reels Accommodates All Standard Inserters Allows Flexible Circuit Board Layout 2.5 mm Pin Spacing for Soldering EIA468, IEC 2862, EIAJ RC1008B
TO92 RADIAL TAPE IN FAN FOLD BOX OR ON REEL
Ordering Notes: When ordering radial tape in fan fold box or on reel, specify the style per Figures 3 through 8. Add the suffix RLR and Style to the device title, i.e. MPS3904RLRA. This will be a standard MPS3904 radial taped and supplied on a reel per Figure 9. Fan Fold Box Information Order in increments of 2000. Reel Information Order in increments of 2000.
US/European Suffix Conversions

US RLRA RLRE RLRM EUROPE RL RL1 ZL1
Packaging Specifications 65
TO92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A H2A
H2B
H2B
H W2 H4 H5 L1 L F1 F2 P2 P1 P P2 D H1 W1 W T T2 T1
Figure 1. Device Positioning on Tape
Specification Inches Symbol

D D2 F1, F2 H H1 H2A H2B H4 H5 L L1 P P1 P2 T T1 T2 W W1 W2
Millimeter Max Min

3.8 0.38 2.4 1.5 8.5 0 0 18 15.5 8.5 2.5 12.5 5.95 3.55 0.15 0.35 17.5 5.5 .15
Item Tape Feedhole Diameter Component Lead Thickness Dimension Component Lead Pitch Bottom of Component to Seating Plane Feedhole Location Deflection Left or Right Deflection Front or Rear Feedhole to Bottom of Component Feedhole to Seating Plane Defective Unit Clipped Dimension Lead Wire Enclosure Feedhole Pitch Feedhole Center to Center Lead First Lead Spacing Dimension Adhesive Tape Thickness Overall Taped Package Thickness Carrier Strip Thickness Carrier Strip Width Adhesive Tape Width Adhesive Tape Position
Min
0.1496 0.015 0.0945 .059 0.3346 0 0 0.7086 0.610 0.3346 0.09842 0.4921 0.2342 0.1397 0.06 0.014 0.6889 0.2165 .0059
Max
4.2 0.51 2.8 4.0 9.5 1.0 1.0 19.5 16.5 11 12.9 6.75 3.95 0.20 1.44 0.65 19 6.3 0.5
0.1653 0.020 0.110 .156 0.3741 0.039 0.051 0.768 0.649 0.433 0.5079 0.2658 0.1556 0.08 0.0567 0.027 0.7481 0.2841 0.01968
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7. 4. Maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes.

FAN FOLD BOX STYLES
ADHESIVE TAPE ON TOP SIDE
ROUNDED SIDE
FLAT SIDE
Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box.
100 GRAM PULL FORCE

16 mm
The component shall not pull free with a 300 gram load applied to the leads for 3 1 second.

Figure 2. Style M
HOLDING FIXTURE
ADHESIVE TAPE ON TOP SIDE
CARRIER STRIP
CARRIER STRIP
330 mm 13 MAX
252 mm 9.92 MAX
FLAT SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE.
ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan fold box is equivalent to styles A and B of reel pack dependent on feed orientation from box.
58 mm
2.28 MAX
Figure 3. Style P
Figure 4. Fan Fold Box Dimensions
ADHESION PULL TESTS

500 GRAM PULL FORCE
70 GRAM PULL FORCE

16 mm
HOLDING FIXTURE
HOLDING FIXTURE There shall be no deviation in the leads and no component leads shall be pulled free of the tape with a 500 gram load applied to the component body for 3 1 second.
The component shall not pull free with a 70 gram load applied to the leads for 3 1 second.
Figure 5. Test #1
Figure 6. Test #2
Figure 7. Test #3

REEL STYLES
CORE DIA. 82mm 1mm
ARBOR HOLE DIA. 30.5mm 0.25mm MARKING NOTE
HUB RECESS 76.2mm 1mm RECESS DEPTH 9.5mm MIN 365mm + 3, 0mm 38.1mm 1mm 48 mm MAX
Material used must not cause deterioration of components or degrade lead solderability
Figure 8. Reel Specifications
ADHESIVE TAPE ON REVERSE SIDE CARRIER STRIP ADHESIVE TAPE ROUNDED SIDE CARRIER STRIP FLAT SIDE
FEED
FEED
Rounded side of transistor and adhesive tape visible.
Flat side of transistor and carrier strip visible (adhesive tape on reverse side).
Figure 9. Style A
Figure 10. Style B
ADHESIVE TAPE ON REVERSE SIDE CARRIER STRIP FLAT SIDE ADHESIVE TAPE CARRIER STRIP ROUNDED SIDE
FEED
FEED
Flat side of transistor and adhesive tape visible.
Rounded side of transistor and carrier strip visible (adhesive tape on reverse side).
Figure 11. Style E
Figure 12. Style F
Section 7
Surface Mount Information
In Brief . . .
Surface Mount Technology is now being utilized to offer answers to many problems that have been created in the use of insertion technology. Limitations have been reached with insertion packages and PC board technology. Surface Mount Technology offers the opportunity to continue to advance the stateoftheart designs that cannot be accomplished with insertion technology. Surface Mount Packages allow more optimum device performance with the smaller Surface Mount Configuration. Internal lead lengths, parasitic capacitance and inductance that placed limitations on chip performance have been reduced. The lower profile of Surface Mount Packages allows more boards to be utilized in a given amount of space. They are stacked closer together and utilize less total volume than insertion populated PC boards. Printed circuit costs are lowered with the reduction of the number of board layers required. The elimination or reduction of the number of plated through holes in the board contribute significantly to lower PC board prices. Surface Mount assembly does not require the preparation of components that is common on insertion technology lines. Surface Mount components are sent directly to the assembly line, eliminating an intermediate step. Automatic placement equipment is available that can place Surface Mount components at the rate of a few thousand per hour to hundreds of thousands of components per hour. Surface Mount Technology is cost effective, allowing the manufacturer the opportunity to produce smaller units and offer increased functions with the same size product.
Surface Mount Information 79
INFORMATION FOR USING SURFACE MOUNT PACKAGES

RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
POWER DISSIPATION FOR A SURFACE MOUNT DEVICE

The power dissipation for a surface mount device is a function of the drain/collector pad size. These can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) TA RJA Although the power dissipation can almost be doubled with this method, area is taken up on the printed circuit board which can defeat the purpose of using surface mount technology. For example, a graph of RJA versus drain pad area is shown in Figure 1. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
RJA , THERMAL RESISTANCE, JUNCTION TO AMBIENT (C/W) 160 Board Material = 0.0625 G10/FR4, 2 oz Copper 0.8 Watts 120 1.25 Watts* 100 *Mounted on the DPAK footprint 0.2 0.4 0.6 A, AREA (SQUARE INCHES) 0.8 1.0 1.5 Watts TA = 25C
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device. For example, for a SOT223 device, PD is calculated as follows. PD = 150C 25C = 800 milliwatts 156C/W The 156C/W for the SOT223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 800 milliwatts. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain/collector pad. By increasing the area of the drain/collector pad, the power dissipation can be increased.
140
80 0.0
Figure 1. Thermal Resistance versus Drain Pad Area for the SOT223 Package (Typical)
SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the SOT23, SC59, SC70/SOT323, SC90/SOT416, SOD123, SOT223, SOT363, SO14, SO16, and TSOP6 packages, the stencil opening should be the same as the pad size or a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be 100C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. The soldering temperature and time should not exceed 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating profile for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 2 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the
STEP 1 PREHEAT ZONE 1 RAMP 200C STEP 2 STEP 3 VENT HEATING SOAK ZONES 2 & 5 RAMP
actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 5 HEATING ZONES 4 & 7 SPIKE 170C STEP 6 VENT STEP 7 COOLING 205 TO 219C PEAK AT SOLDER JOINT
STEP 4 HEATING ZONES 3 & 6 SOAK 160C
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
150C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
100C 100C
140C
DESIRED CURVE FOR LOW MASS ASSEMBLIES 50C
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 2. Typical Solder Heating Profile
Footprints for Soldering

0.037 0.95 0.037 0.95 0.037 0.95 0.037 0.95
0.094 2.4 0.039 1.0 0.031 0.8

inches mm
0.079 2.0 0.035 0.9 0.031 0.8

inches mm
SC59
SOT23
0.025 0.025 0.65
0.5 min. (3x)
0.075
0.035 0.9 0.028 0.7 inches mm
0.5 min. (3x)
1.9
1.4
SC70/SOT323
SOT 416/SC90
0.15 3.8 0.079 2.0
0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5
0.091 2.3
0.248 6.3
0.275 7.0
0.024 0.6 0.059 1.5

inches mm
SOT223
SO14, SO16

mm
0.65
0.5 1
0.060 1.52
0.155 4.0
0.050 1.270
inches
0.5 mm (min) 0.91 0.036
1.22 0.048 0.4 mm (min)
2.36 0.093 4.19 0.165
mm inches
1.9 mm
SOD123
SOT363 (SC70 6 LEAD)
0.094 2.4
0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm
TSOP6
0.65 mm 0.65 mm
Section 8
Package Outline Dimensions
In Brief . . .
The following pages contain information on the various packages referenced on the individual data sheets. Information includes: a picture of the package, dimensions in both millimeters and inches, the various pinout configurations (styles), a cross reference for case numbers, old JEDEC TO numbers, the new JEDEC TO designation, and footprint dimensions for surface mount packages to assist in board layout.
Package Outline Dimensions 81
Package Outline Dimensions

Dimensions are in inches unless otherwise noted. A R P
SEATING PLANE
L K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43
X X G H V
1
D J C SECTION XX N N
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE
STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2
STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 02904 (TO226AA) TO92 PLASTIC
R P F L
B
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 0.250 0.080 0.105 0.100 0.135 0.135 MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 6.35 2.04 2.66 2.54 3.43 3.43
K
DIM A B C D F G H J K L N P R V
X X G H V
1 2 3
D J SECTION XX
N C
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE
STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN
CASE 02905 (TO226AE) TO92 1WATT PLASTIC
PACKAGE OUTLINE DIMENSIONS (continued)
B
NOTES: 1. PACKAGE CONTOUR OPTIONAL WITHIN DIA B AND LENGTH A. HEAT SLUGS, IF ANY, SHALL BE INCLUDED WITHIN THIS CYLINDER, BUT SHALL NOT BE SUBJECT TO THE MIN LIMIT OF DIA B. 2. LEAD DIA NOT CONTROLLED IN ZONES F, TO ALLOW FOR FLASH, LEAD FINISH BUILDUP, AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS. MILLIMETERS MIN MAX 5.84 7.62 2.16 2.72 0.46 0.56 1.27 25.40 38.10 INCHES MIN MAX 0.230 0.300 0.085 0.107 0.018 0.022 0.050 1.000 1.500
D K F A F K
DIM A B D F K
All JEDEC dimensions and notes apply.
CASE 5102 (DO204AA) DO7
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIM K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.050 BSC 0.100 BSC 0.014 0.016 0.500 0.250 0.080 0.105 0.050 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.49 0.41 0.56 0.407 0.482 1.27 BSC 3.54 BSC 0.36 0.41 12.70 6.35 2.03 2.66 1.27 2.93 3.43
SEATING PLANE
R D K L
X X D G H V C N
SECTION XX
CASE 18202 (T0226AC) TO92 PLASTIC
STYLE 1: PIN 1. ANODE 2. CATHODE
A L
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
B S
1 2
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE
STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE
STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE
STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODEANODE
STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE
STYLE 18: PIN 1. NO CONNECTION 2. CATHODE 3. ANODE
STYLE 19: PIN 1. CATHODE 2. ANODE 3. CATHODEANODE
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
CASE 31808 (TO236AB) SOT23 PLASTIC
A L
3 2 1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181
D G
C H K
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
STYLE 2: PIN 1. N.C. 2. ANODE 3. CATHODE
STYLE 4: PIN 1. N.C. 2. CATHODE 3. ANODE
CASE 318D04 SC59
A F
NOTES: 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 4. CONTROLLING DIMENSION: INCH.
S
1 2 3
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
STYLE 2: PIN 1. 2. 3. 4.
ANODE CATHODE NC CATHODE
STYLE 3: PIN 1. 2. 3. 4.
GATE DRAIN SOURCE DRAIN
CASE 318E04 SOT223
A L
6 5 1 2 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
S
3
D G M 0.05 (0.002) H C K J
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
DRAIN DRAIN GATE SOURCE DRAIN DRAIN
CASE 318G02 TSOP6 PLASTIC
A L
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40
S
1 2
V G
C 0.05 (0.002)
R N K
DIM A B C D G H J K L N R S V
STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE
STYLE 9: PIN 1. ANODE 2. CATHODE 3. CATHODEANODE
STYLE 10: PIN 1. CATHODE 2. ANODE 3. ANODECATHODE
CASE 41902 SC70/SOT323
A G V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40
S
1 2 3
D 6 PL
0.2 (0.008)
N J C
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2
STYLE 6: PIN 1. 2. 3. 4. 5. 6.
ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2
CASE 419B-01 SOT363
C H
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 0.000 0.004 0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 0.00 0.10 0.15 3.55 3.85
D 3 PL 0.20 (0.008)
E J
STYLE 1: PIN 1. CATHODE 2. ANODE
CASE 42504 SOD123
A S
2 3 1 M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC
G B
B K
0.20 (0.008) A
C L H
STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE
CASE 46301 SOT416/SC90
14
B
1 7
NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01
A F C N H G D
SEATING PLANE
J K M
CASE 64606 14PIN DIP PLASTIC
A
16 9
B
1 8
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01
F S
T H G D
16 PL
SEATING PLANE
J T A
M
0.25 (0.010)
CASE 64808 16PIN DIP PLASTIC
A
14 8
B
1 7
P 7 PL 0.25 (0.010)
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
G C
R X 45 _
T
SEATING PLANE
D 14 PL 0.25 (0.010)
M
K T B
S
M A
S
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019
CASE 751A03 SO14 PLASTIC
A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019
16
B
1 8
8 PL
0.25 (0.010)
G F
K C T
SEATING PLANE
X 45 _
M D
16 PL M
0.25 (0.010)
T B
DIM A B C D F G J K M P R
CASE 751B05 SO16 PLASTIC
Section 9
Reliability and Quality Assurance
In Brief . . .
This Reliability and Quality Assurance section contains information on the measurement of outgoing quality, reliability data analysis, reliability stress test descriptions with the applicable MILSTD methods, statistical process control techniques, and quality assurance processing.
Reliability and Quality Assurance 911
OUTGOING QUALITY
The Average Outgoing Quality (AOQ) refers to the number of devices per million that are outside the specification limits at the time of shipment. Motorola has established Six Sigma goals to improve its outgoing quality and will continue its error free performance focus to achieve its goal of zero parts per million (PPM) outgoing quality. Motorolas present quality level has lead to vendor certification programs with many of its customers. These programs ensure a level of quality which allows the customer either to reduce or eliminate the need for incoming inspections.
where: = failure rate 2 = chisquare function = (100 confidence level) / 100 d.f. = degrees of freedom = 2r + 2 r = number of failures t = device hours Chisquare values for 60% and 90% confidence intervals for up to 12 failures are shown in Table 11. Table 11 ChiSquare Table
ChiSquare Distribution Function 60% Confidence Level 90% Confidence Level No. Fails 0 1 2 3 4 5 6 7 8 9 10 11 12 2 Quantity 4.605 7.779 10.645 13.362 15.987 18.549 21.064 23.542 25.989 28.412 30.813 33.196 35.563
AVERAGE OUTGOING QUALITY (AOQ) CALCULATION

AOQ = (Process Average) D (Probability of Acceptance) D (106) (PPM)
No. Fails 0 1 2 3 4 5 6 7 8 9 10 11 12
2 Quantity 1.833 4.045 6.211 8.351 10.473 12.584 14.685 16.780 18.868 20.951 23.031 25.106 27.179
D Process Average =
Total Projected Reject Devices Total Number of Devices Defects in Sample Sample Size
D Projected Reject Devices =
D Lot Size
D Total Number of Devices = Sum of units in each submitted lot D Probability of Acceptance = 1
Number of Lots Rejected Number of Lots Tested
D 106 = Conversion to parts per million (PPM)
RELIABILITY DATA ANALYSIS

Reliability is the probability that a semiconductor device will perform its specified function in a given environment for a specified period. In other words, reliability is quality over time and environmental conditions. The most frequently used reliability measure for semiconductor devices is the failure rate ( ). The failure rate is obtained by dividing the number of failures observed by the product of the number of devices on test and the interval in hours, usually expressed as percent per thousand hours or failures per billion device hours (FITS). This is called a point estimate because it is obtained from observations on a portion (sample) of the population of devices. To project from the sample to the population in general, one must establish confidence intervals. The application of confidence intervals is a statement of how confident one is that the sample failure rate approximates that for the population. To obtain failure rates at different confidence levels, it is necessary to make use of specific probability distributions. The chisquare (2) distribution that relates observed and expected frequencies of an event is frequently used to establish confidence intervals. The relationship between failure rate and the chisquare distribution is as follows: 2 (, d. f.) = 2t
The failure rate of semiconductor devices is inherently low. As a result, the industry uses a technique called accelerated testing to assess the reliability of semiconductors. During accelerated tests, elevated stresses are used to produce, in a short period, the same failure mechanisms as would be observed under normal use conditions. The objective of this testing is to identify these failure mechanisms and eliminate them as a cause of failure during the useful life of the product. Temperature, relative humidity, and voltage are the most frequently used stresses during accelerated testing. Their relationship to failure rates has been shown to follow an Eyring type of equation of the form: = A exp(kT) exp(B/RH) exp(CE) Where A, B, C, , and k are constants, more specifically B, C, and are numbers representing the apparent energy at which various failure mechanisms occur. These are called activation energies. T is the temperature, RH is the relative humidity, and E is the electric field. The most familiar form of this equation (shown on following page) deals with the first exponential term that shows an Arrhenius type relationship of the failure rate versus the junction temperature of semiconductors. The junction temperature is related to the ambient temperature through the thermal resistance and power dissipation. Thus, we can test devices near their maximum junction temperatures, analyze the failures to assure that they are the types that are accelerated by temperature and then by applying known acceleration factors, estimate the failure rates for lower junction. The table on the following page shows observed activation energies with references.
Table 12 Time Dependent Failure Mechanisms in Semiconductor Devices (Applicable to Discrete and Integrated Circuits)
Device Association Silicon Oxide SiliconSilicon Oxide Interface Relevant Factors Mobile Ions E/V, T Accelerating Factors T, V 1.0 Typical Activation Energy in eV
Process Surface Charges Inversion, Accumulation
Model Fitch, et al. Peck
Reference 1A 2
Oxide Pinholes
E/V, T
E, T
0.71.0 (Bipolar) 1.0 (Bipolar) 0.30.4 (MOS) 0.3 (MOS) 0.8 (MOS) EPROM 1.0 Large grain Al (glassivated) 0.5 Small grain Al 0.7 CuAl/CuSiAl (sputtered)
1984 WRS Hokari, et al. Domangue, et al. Crook, D.L. Gear, G.
18 5 3 4 11
Dielectric Breakdown (TDDB) Charge Loss
E/V, T
E, T
E, T
E, T
Metallization
Electromigration
T, J
J, T
Nanda, et al.
Grain Size
Black, J.R.
Doping
Black, J.R.
12
Corrosion Chemical Galvanic Electrolytic Bond and Other Mechanical Interfaces Various Water Fab, Assembly, and Silicon Defects Intermetallic Growth Metal Scratches Mask Defects, etc. Silicon Defects
Contamination
H, E/V, T
0.60.7 (for electrolysis) E/V may have thresholds 1.0 (Au/Al)
Lycoudes, N.E.
T, Impurities Bond Strength T, V
Fitch, W.T
T, V
0.50.7 eV 0.5 eV
Howes, et al. MMPD
10 13
V = voltage; E = electric field; T = temperature; J = current density; H = humidity NO. REFERENCE

1A 1.0 eV activation for leakage type failures. Fitch, W.T.; Greer, P.; Lycoudes, N.; Data to Support 0.001%/1000 Hours for Plastic I/Cs. Case study on linear product shows 0.914 eV activation energy which is within experimental error of 0.9 to 1.3 eV activation energies for reversible leakage (inversion) failures reported in the literature. 1B 0.7 To 1.0 eV for oxide defect failures for bipolar structures. This is under investigation subsequent to information obtained from 1984 Wafer Reliability Symposium, especially for bipolar capacitors with silicon nitride as dielectric. 1.0 eV activation for leakage type failures. Peck, D.S.; New Concerns About Integrated Circuit Reliability 1978 Reliability Physics Symposium. 3 0.36 eV for dielectric breakdown for MOS gate structures. Domangue, E.; Rivera, R.; Shedard, C.; Reliability Prediction Using Large MOS Capacitors, 1984 Reliability Physics Symposium. 4 0.3 eV for dielectric breakdown. Crook, D.L.; Method of Determining Reliability Screens for Time Dependent Dielectric Breakdown, 1979 Reliability Physics Symposium. 5 1.0 eV for dielectric breakdown. Hokari, Y.; et al.; IEDM Technical Digest, 1982. 11 12 13 10 6 1.0 eV for large grain AlSi (compared to line width). Nanda, Vangard, GjP; Black, J.R.; Electromigration of AlSi Alloy Films, 1978 Reliability Physics Symposium. 7 0.5 eV Al, 0.7 eV CuAl small grain (compared to line width). Black, J.R.; Current Limitation of Thin Film Conductor 1982 Reliability Physics Symposium. 8 0.65 eV for corrosion mechanism. Lycoudes, N.E.; The Reliability of Plastic Microcircuits in Moist Environments, 1978 Solid State Technology. 9 1.0 eV for open wires or high resistance bonds at the pad bond due to AuAl intermetallics. Fitch, W.T.; Operating Life vs Junction Temperatures for Plastic Encapsulated I/C (1.5 mil Au wire), unpublished report. 0.7 eV for assembly related defects. Howes, M.G.; Morgan, D.V.; Reliability and Degradation, Semiconductor Devices and CIrcuits John Wiley and Sons, 1981. Gear, G.; FAMOUS PROM Reliability Studies, 1976 Reliability Physics Symposium. Black, J.R.: unpublished report. Motorola Memory Products Division; unpublished report.
THERMAL RESISTANCE
Circuit performance and longterm circuit reliabiity are affected by die temperature. Normally, both are improved by keeping the junction temperatures low. Electrical power dissipated in any semiconductor device is a source of heat. This heat source increases the temperature of the die about some reference point, normally the ambient temperature of 25C in still air. The temperature increase, then, depends on the amount of power dissipated in the circuit and on the net thermal resistance between the heat source and the reference point. The temperature at the junction depends on the packaging and mounting systems ability to remove heat generated in the circuit from the junction region to the ambient environment. The basic formula for converting power dissipation to estimated junction temperature is: (1) TJ = TA + PD (JC + CA) or TJ = TA + PD (JA) (2) where: TJ = maximum junction temperature TA = maximum ambient temperature PD = calculated maximum power dissipation, including effects of external loads when applicable JC = average thermal resistance, junction to case CA = average thermal resistance, case to ambient JA = average thermal resistance, junction to ambient This Motorola recommended formula has been approved by RADC and DESC for calculating a practical maximum operating junction temperature for MILM38510 devices. Only two terms on the right side of equation (1) can be varied by the user, the ambient temperature and the device casetoambient thermal resistance, CA. (To some extent the device power dissipation can also be controlled, but under recommended use the supply voltage and loading dictate a
fixed power dissipation.) Both system air flow and the package mounting technique affect the CA thermal resistance term. JC is essentially independent of air flow and external mounting method, but is sensitive to package material, die bonding method, and die area. For applications where the case is held at essentially a fixed temperature by mounting on a large or temperature controlled heat sink, the estimated junction temperature is calculated by: TJ = TC + PD (JC) (3) where TC = maximum case temperature and the other parameters are as previously defined.
AIR FLOW
Air flow over the packages (due to a decrease in JC) reduces the thermal resistance of the package, therefore permitting a corresponding increase in power dissipation without exceeding the maximum permissible operating junction temperature. For thermal resistance values for specific packages, see the Motorola Data Book or Design Manual for the appropriate device family or contact your local Motorola sales office.
ACTIVATION ENERGY
Determination of activation energies is accomplished by testing randomly selected samples from the same population at various stress levels and comparing failure rates due to the same failure mechanism. The activation energy is represented by the slope of the curve relating to the natural logarithm of the failure rate to the various stress levels. In calculating failure rates, the comprehensive method is to use the specific activation energy for each failure mechanism applicable to the technology and circuit under consideration. A common alternative method is to use a single activation energy value for the expected failure mechanism(s) with the lowest activation energy.
RELIABILITY STRESS TESTS

The following are brief descriptions of the reliability tests commonly used in the reliability monitoring program. Not all of the tests listed are performed by each product division. Other tests may be performed when appropriate.
HIGH TEMPERATURE REVERSE BIAS (HTRB)

The purpose of this test is to align mobile ions by means of temperature and voltage stress to form a highcurrent leakage path between two or more junctions. Typical Test Conditions: TA = 85C to 150C, Bias = 80% to 100% of Data Book max. rating, t = 120 to 1000 hours Common Failure Modes: Parametric shifts in leakage and gain Common Failure Mechanisms: Ionic contamination on the surface or under the metallization of the die Military Reference: MILSTD750, Method 1039
AUTOCLAVE (aka, PRESSURE COOKER)

Autoclave is an environmental test which measures device resistance to moisture penetration and the resultant effect of galvanic corrosion. Autoclave is a highly accelerated and destructive test. Typical Test Conditions: TA = 121C, rh = 100%, p = 1 atmosphere (15 psig), t = 24 to 96 hours Common Failure Modes: Parametric shifts, high leakage and/or catastrophic Common Failure Mechanisms: Die corrosion or contaminants such as foreign material on or within the package materials. Poor package sealing.
HIGH HUMIDITY HIGH TEMPERATURE BIAS (H3TB, H3TRB, or THB)

This is an environmental test designed to measure the moisture resistance of plastic encapsulated devices. A bias is applied to create an electrolytic cell necessary to accelerate corrosion of the die metallization. With time, this is a catastrophically destructive test. Typical Test Conditions: TA = 85C to 95C, rh = 85% to 95%, Bias = 80% to 100% of Data Book max. rating, t = 96 to 1750 hours Common Failure Modes: Parametric shifts, high leakage and/or catastrophic Common Failure Mechanisms: Die corrosion or contaminants such as foreign material on or within the package materials. Poor package sealing.
HIGH TEMPERATURE STORAGE LIFE (HTSL)

High temperature storage life testing is performed to accelerate failure mechanisms which are thermally activated through the application of extreme temperatures Typical Test Conditions: TA = 70C to 200C, no bias, t = 24 to 2500 hours Common Failure Modes: Parametric shifts in leakage and gain Common Failure Mechanisms: Bulk die and diffusion defects Military Reference: MILSTD750, Method 1032
INTERMITTENT OPERATING LIFE (IOL)

The purpose of this test is the same as SSOL in addition to checking the integrity of both wire and die bonds by means of thermal stressing Typical Test Conditions: TA = 25C, Pd = Data Book maximum rating, Ton = Toff = D of 50C to 100C, t = 42 to 30000 cycles Common Failure Modes: Parametric shifts and catastrophic Common Failure Mechanisms: Foreign material, crack and bulk die defects, metallization, wire and die bond defects Military Reference: MILSTD750, Method 1037
HIGH TEMPERATURE GATE BIAS (HTGB)

This test is designed to electrically stress the gate oxide under a bias condition at high temperature. Typical Test Conditions: TA = 150C, Bias = 80% of Data Book max. rating, t = 120 to 1000 hours Common Failure Modes: Parametric shifts in gate leakage and gate threshold voltage Common Failure Mechanisms: Random oxide defects and ionic contamination Military Reference: MILSTD750, Method 1042
MECHANICAL SHOCK
This test is used to determine the ability of the device to withstand a sudden change in mechanical stress due to abrupt changes in motion as seen in handling, transportation, or actual use. Typical Test Conditions: Acceleration = 1500 gs, Orientation = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5 Common Failure Modes: Open, short, excessive leakage, mechanical failure Common Failure Mechanisms: Die and wire bonds, cracked die, package defects Military Reference: MILSTD750, Method 2015
STEADY STATE OPERATING LIFE (SSOL)

The purpose of this test is to evaluate the bulk stability of the die and to generate defects resulting from manufacturing aberrations that are manifested as time and stressdependent failures. Typical Test Conditions: TA = 25C, PD = Data Book maximum rating, t = 16 to 1000 hours Common Failure Modes: Parametric shifts and catastrophic Common Failure Mechanisms: Foreign material, crack die, bulk die, metallization, wire and die bond defects Military Reference: MILSTD750, Method 1026
MOISTURE RESISTANCE
The purpose of this test is to evaluate the moisture resistance of components under temperature/humidity conditions typical of tropical environments. Typical Test Conditions: TA = 10C to 65C, rh = 80% to 98%, t = 24 hours/cycles, cycle = 10 Common Failure Modes: Parametric shifts in leakage and mechanical failure Common Failure Mechanisms: Corrosion or contaminants on or within the package materials. Poor package sealing Military Reference: MILSTD750, Method 1021
TEMPERATURE CYCLING (AIR TO AIR)

The purpose of this test is to evaluate the ability of the device to withstand both exposure to extreme temperatures and transitions between temperature extremes. This testing will also expose excessive thermal mismatch between materials. Typical Test Conditions: TA = 65C to 200C, cycle = 10 to 4000 Common Failure Modes: Parametric shifts and catastrophic Common Failure Mechanisms: Wire bond, cracked or lifted die and package failure Military Reference: MILSTD750, Method 1051
SOLDERABILITY
The purpose of this test is to measure the ability of the device leads/terminals to be soldered after an extended period of storage (shelf life). Typical Test Conditions: Steam aging = 8 hours, Flux = R, Solder = Sn60, Sn63 Common Failure Modes: Pin holes, dewetting, nonwetting Common Failure Mechanisms: Poor plating, contaminated leads Military Reference: MILSTD750, Method 2026
THERMAL SHOCK (LIQUID TO LIQUID)

The purpose of this test is to evaluate the ability of the device to withstand both exposure to extreme temperatures and sudden transitions between temperature extremes. This testing will also expose excessive thermal mismatch between materials. Typical Test Conditions: TA = 0C to 100C, cycle = 20 to 300 Common Failure Modes: Parametric shifts and catastrophic Common Failure Mechanisms: Wire bond, cracked or lifted die and package failure Military Reference: MILSTD750, Method 1056
SOLDER HEAT
This test is used to measure the ability of a device to withstand the temperatures as may be seen in wave soldering operations. Electrical testing is the endpoint critierion for this stress. Typical Test Conditions: Solder Temperature = 260C, t = 10 seconds Common Failure Modes: Parameter shifts, mechanical failure Common Failure Mechanisms: Poor package design Military Reference: MILSTD750, Method 2031
VARIABLE FREQUENCY VIBRATION

This test is used to examine the ability of the device to withstand deterioration due to mechanical resonance. Typical Test Conditions: Peak acceleration = 20 gs, Frequency range = 20 Hz to KHz, t = 48 minutes Common Failure Modes: Open, short, excessive leakage, mechanical failure Common Failure Mechanisms: Die and wire bonds, cracked die, package defects Military Reference: MILSTD750, Method 2056
STATISTICAL PROCESS CONTROL

Communication Power & Signal Technologies Group (CPSTG) is continually pursuing new ways to improve product quality. Initial design improvement is one method that can be used to produce a superior product. Equally important to outgoing product quality is the ability to produce product that consistently conforms to specification. Process variability is the basic enemy of semiconductor manufacturing since it leads to product variability. Used in all phases of Motorolas product manufacturing, STATISTICAL PROCESS CONTROL (SPC) replaces variability with predictability. The traditional philosophy in the semiconductor industry has been adherence to the data sheet specification. Using SPC methods ensures that the product will meet specific process requirements throughout the manufacturing cycle. The emphasis is on defect prevention, not detection. Predictability through SPC methods requires the manufacturing culture to focus on constant and permanent improvements. Usually, these improvements cannot be bought with stateoftheart equipment or automated factories. With quality in design, process, and material selection, coupled with manufacturing predictability, Motorola can produce world class products. The immediate effect of SPC manufacturing is predictability through process controls. Product centered and distributed well within the product specification benefits Motorola with fewer rejects, improved yields, and lower cost. The direct benefit to Motorolas customers includes better incoming quality levels, less inspection time, and shiptostock capability. Circuit performance is often dependent on the cumulative effect of component variability. Tightly controlled component distributions give the customer greater circuit predictability. Many customers are also converting to justintime (JIT) delivery programs. These programs require improvements in cycle time and yield predictability achievable only through SPC techniques. The benefit derived from SPC helps the manufacturer meet the customers expectations of higher quality and lower cost product. Ultimately, Motorola will have Six Sigma capability on all products. This means parametric distributions will be centered within the specification limits, with a product distribution of plus or minus Six Sigma about mean. Six Sigma capability, shown graphically in Figure 1, details the benefit in terms of yield and outgoing quality levels. This compares a centered distribution versus a 1.5 sigma worst case distribution shift. New product development at Motorola requires more robust design features that make them less sensitive to minor variations in processing. These features make the implementation of SPC much easier. A complete commitment to SPC is present throughout Motorola. All managers, engineers, production operators, supervisors, and maintenance personnel have received multiple training courses on SPC techniques. Manufacturing has identified 22 wafer processing and 8 assembly steps considered critical to the processing of semiconductor products. Processes controlled by SPC methods that have shown significant improvement are in the diffusion, photolithography, and metallization areas.
6 5 4 3 2 1 0
2 3 4
5 6
Standard Deviations From Mean Distribution Centered At 3 2700 ppm defective 99.73% yield At 4 63 ppm defective 99.9937% yield At 5 0.57 ppm defective 99.999943% yield At 6 0.002 ppm defective 99.9999998% yield Distribution Shifted 1.5 66810 ppm defective 93.32% yield 6210 ppm defective 99.379% yield 233 ppm defective 99.9767% yield 3.4 ppm defective 99.99966% yield
Figure 1. AOQL and Yield from a Normal Distribution of Product With 6 Capability To better understand SPC principles, brief explanations have been provided. These cover process capability, implementation, and use.
PROCESS CAPABILITY
One goal of SPC is to ensure a process is CAPABLE. Process capability is the measurement of a process to produce products consistently to specification requirements. The purpose of a process capability study is to separate the inherent RANDOM VARIABILITY from ASSIGNABLE CAUSES. Once completed, steps are taken to identify and eliminate the most significant assignable causes. Random variability is generally present in the system and does not fluctuate. Sometimes, the random variability is due to basic limitations associated with the machinery, materials, personnel skills, or manufacturing methods. Assignable cause inconsistencies relate to time variations in yield, performance, or reliability. Traditionally, assignable causes appear to be random due to the lack of close examination or analysis. Figure 2 shows the impact on predictability that assignable cause can have. Figure 3 shows the difference between process control and process capability. A process capability study involves taking periodic samples from the process under controlled conditions. The performance characteristics of these samples are charted against time. In time, assignable causes can be identified and engineered out. Careful documentation of the process is the key to accurate diagnosis and successful removal of the assignable causes. Sometimes, the assignable causes will remain unclear, requiring prolonged experimentation. Elements which measure process variation control and capability are Cp and Cpk, respectively. Cp is the specification width divided by the process width or Cp = (specification width) / 6. Cpk is the absolute value of the closest specification value to the mean, minus the mean, divided by half the process width or Cpk = closest specification X/3.
PREDICTION In control assignable causes eliminated TIME TIME SIZE Out of control (assignable causes present) SIZE
Process under control all assignable causes are removed and future distribution is predictable.
? ? ? ? ? ? ? ? ? ? PREDICTION ?
Lower Specification Limit
Upper Specification Limit

TIME In control and capable (variation from random variability reduced)
TIME SIZE
SIZE
In control but not capable (variation from random variability excessive)
Figure 2. Impact of Assignable Causes on Process Predictable At Motorola, for critical parameters, the process capability is acceptable with a Cpk = 1.50 with continual improvement our goal. The desired process capability is a Cpk = 2 and the ideal is a Cpk = 5. Cpk, by definition, shows where the current production process fits with relationship to the specification limits. Off center distributions or excessive process variability will result in less than optimum conditions.
Figure 3. Difference Between Process Control and Process Capability be collected at appropriate time intervals to detect variations in the process. As the process begins to show improved stability, the interval may be increased. The data collected must be carefully documented and maintained for later correlation. Examples of common documentation entries are operator, machine, time, settings, product type, etc. Once the plan is established, data collection may begin. The data collected with generate X and R values that are plotted with respect to time. X refers to the mean of the values within a given subgroup, while R is the range or greatest value minus least value. When approximately 20 or more X and R values have been generated, the average of these values is computed as follows: X = (X + X2 + X3 + . . .)/K R = (R1 + R2 + R2 + . . .)/K where K = the number of subgroups measured. The values of X and R are used to create the process control chart. Control charts are the primary SPC tool used to signal a problem. Shown in Figure 4, process control charts show X and R values with respect to time and concerning reference to upper and lower control limit values. Control limits are computed as follows: R upper control limit = UCLR = D4 R R lower control limit = LCLR = D3 R X upper control limit = UCLX = X + A2 R X lower control limit = LCL X = X A2 R
SPC IMPLEMENTATION AND USE

CPSTG uses many parameters that show conformance to specification. Some parameters are sensitive to process variations while others remain constant for a given product line. Often, specific parameters are influenced when changes to other parameters occur. It is both impractical and unnecessary to monitor all parameters using SPC methods. Only critical parameters that are sensitive to process variability are chosen for SPC monitoring. The process steps affecting these critical parameters must be identified as well. It is equally important to find a measurement in these process steps that correlates with product performance. This measurement is called a critical process parameter. Once the critical process parameters are selected, a sample plan must be determined. The samples used for measurement are organized into RATIONAL SUBGROUPS of approximately two to five pieces. The subgroup size should be such that variation among the samples within the subgroup remain small. All samples must come from the same source e.g., the same mold press operator, etc. Subgroup data should
154 153 152 151 150 149 148 147 LCL = 148.0 X = 150.4 UCL = 152.8
7 6 5 4 3 2 1 0
Where D4, D3, and A2 are constants varying by sample size, with values for sample sizes from 2 to 10 shown in the following partial table:
n D4 D3 2 3.27 * 3 2.57 * 4 2.28 * 5 2.11 * 6 2.00 * 7 1.92 0.08 8 1.86 0.14 9 1.82 0.18 10 1.78 0.22
A2 1.88 1.02 0.73 0.58 0.48 0.42 0.37 0.34 0.31 *For sample sizes below 7, the LCLR would technically be a negative number; in those cases there is no lower control limit; this means that for a subgroup size 6, six identical measurements would not be unreasonable.
Control charts are used to monitor the variability of critical process parameters. The R chart shows basic problems with piece to piece variability related to the process. The X chart can often identify changes in people, machines, methods, etc. The source of the variability can be difficult to find and may require experimental design techniques to identify assignable causes. Some general rules have been established to help determine when a process is OUTOFCONTROL. Figure 5 shows a control chart subdivided into zones A, B, and C corresponding to 3 sigma, 2 sigma, and 1 sigma limits respectively. In Figures 6 through 9 four of the tests that can be used to identify excessive variability and the presence of assignable causes are shown. As familiarity with a given process increases, more subtle tests may be employed successfully. Once the variability is identified, the cause of the variability must be determined. Normally, only a few factors have a significant impact on the total variability of the process. The importance of correctly identifying these factors is stressed in the following example. Suppose a process variability depends on the variance of five factors A, B, C, D, and E. Each has a variance of 5, 3, 2, 1, and 0.4, respectively. Since:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 UCL = 7.3 R = 3.2 LCL = 0
Figure 4. Example of Process Control Chart Showing Oven Temperature Data
tot = tot =
A2 + B2 + C2 + D2 + E2 52 + 32 + 22 + 12 +(0.4)2 = 6.3
If only D is identified and eliminated, then: tot = 52 + 32 + 22 + (0.4)2 = 6.2 This results in less than 2% total variability improvement. If B, C, and D were eliminated, then: tot = 52 + (0.4)2 = 5.02 This gives a considerably better improvement of 23%. If only A is identified and reduced from 5 to 2, then: tot = 22 + 32 + 22 + 12 + (0.4)2 = 4.3 Identifying and improving the variability from 5 to 2 yields a total variability improvement of nearly 40%. Most techniques may be employed to identify the primary assignable cause(s). Outofcontrol conditions may be correlated to documented process changes. The product may be analyzed in detail using best versus worst part comparisons or Product Analysis Lab equipment. Multivariance analysis can be used to determine the family of variation (positional, critical, or temporal). Lastly, experiments may be run to test theoretical or factorial analysis. Whatever method is used, assignable causes must be identified and eliminated in the most expeditious manner possible. After assignable causes have been eliminated, new control limits are calculated to provide a more challenging variablility criteria for the process. As yields and variability improve, it may become more difficult to detect improvements because they become much smaller. When all assignable causes have been eliminated and the points remain within control limits for 25 groups, the process is said to in a state of control.
UCL
ZONE A (+ 3 SIGMA) ZONE B (+ 2 SIGMA) ZONE C (+ 1 SIGMA) ZONE C ( 1 SIGMA) ZONE B ( 2 SIGMA) ZONE A ( 3 SIGMA) CENTERLINE
UCL
A B C C B
LCL
LCL
Figure 5. Control Chart Zones
Figure 6. One Point Outside Control Limit Indicating Excessive Variability UCL UCL
A B C C B
A B C C B A
LCL
LCL
Figure 7. Two Out of Three Points in Zone A or Beyond Indicating Excessive Variability
Figure 8. Four Out of Five Points in Zone B or Beyond Indicating Excessive Variability UCL
A B C C B A
LCL
Figure 9. Seven Out of Eight Points in Zone C or Beyond Indicating Excessive Variability
SUMMARY
Motorola is committed to the use of STATISTICAL PROCESS CONTROLS. These principles, used throughout manufacturing have already resulted in many significant improvements to the processes. Continued dedication to the SPC culture will allow Motorola to reach the Six Sigma and zero defect capability goals. SPC will further enhance the commitment to TOTAL CUSTOMER SATISFACTION.
Section 10
Replacement Devices
In Brief . . .
The Replacement Devices index provides you with a list of devices which had been supported with data sheets in the prior edition of the SmallSignal Transistors, FETs and Diodes data book (DL126 Rev 5) but are no longer supported in this new edition. A direct or similar replacement part is listed for those devices which have replacement parts.
Replacement Devices 101
REPLACEMENT DEVICES
DEVICE 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143 1N5143A 1N5144 1N5144A 1N5145 1N5145A 1N5146 1N5146A 1N5147 1N5147A 1N5441A 1N5443A 1N5444A 1N5445A 1N5449A 1N5450A 1N5451A 1N5452A 1N5453A 1N5455A 2N697 2N718A 2N720A 2N930 2N930A 2N956 2N1613 2N1711 2N1893 2N2102 2N2218A 2N2219 2N2219A 2N2222 2N2222A 2N2270 2N2369 2N2369A 2N2484 2N2895 2N2896 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3019 2N3020 2N3053 REPLACEMENT MV2101 MV2101 MMBV2103LT1 MMBV2103LT1 MMBV2104LT1 MMBV2104LT1 MMBV2105LT1 MMBV2105LT1 MMBV2105LT1 MMBV2105LT1 MMBV2107LT1 MMBV2107LT1 MMBV2108LT1 MMBV2108LT1 MMBV2109LT1 MV2109 MV2111 MV2111 MV2101 MV2103 MV2104 MV2105 MV2108 MV2109 MV2111 MV2111 MV2111 MV2115 MPSA20 MPSA05 MPSA06 MPSA18 MPSA18 MPSA05 2N4410 MPSA05 MPSA06 2N4410 MPS2222A MPS2222A MPS2222A MPS2222 MPS2222A MPSA05 MPS2369 MPS2369A 2N5087 MPSA06 2N5551 MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPSA06 MPSA06 MPSA20 DEVICE 2N3053A 2N3244 2N3250 2N3251 2N3251A 2N3467 2N3468 2N3497 2N3500 2N3501 2N3546 2N3634 2N3635 2N3636 2N3637 2N3700 2N3799 2N3947 2N3963 2N3964 2N4014 2N4032 2N4033 2N4036 2N4037 2N4126 2N4265 2N4405 2N4407 2N4931 2N5086 2N5668 2N5669 2N5670 2N6431 2N6433 2N6516 BA582T1 BC107 BC107A BC107B BC108 BC109C BC14010 BC14016 BC14110 BC14116 BC16016 BC16116 BC177 BC177A BC177B BC238 BC309B BC393 BC394 BC450 BC450A BC546A BC559 REPLACEMENT MPSA05 2N4403 2N4403 MPS2907A MPS2907A MPSA56 MPSA56 2N5401 2N5551 2N5551 MPSH17 2N5401 2N5401 MPSA92 MPSA92 MPSA06 MPSA18 MPS2222A MPSA18 MPSA18 MPS2222A MPS2907A MPSA56 MPSA56 MPSA56 MPS4126 2N4264 MPS8599 MPS8599 MPSA92 2N5087 2N3819 2N3819 2N3819 MPSA42 MPSA92 2N6517 MMBV3401LT1 BC237 BC237 BC237 BC3338 MPSW06 MPSW06 MPSW06 MPSW06 MPSW56 MPSW56 BC547 BC547A BC547B BC238B BC308C MPSA92 MPSA42 MPSA92 MPSA92 BC546B BC559B DEVICE BC560B BC849ALT1 BC850ALT1 BC857CLT1 BCY70 BCY71 BCY72 BDB01D BDB02D BDC02D BDC05 BF244A BF244B BF245 BF245A BF245B BF245C BF246A BF246B BF247B BF256B BF256C BF258 BF374 BF391 BF392 BF492 BF493 BFW43 BSP20AT1 BSS71 BSS72 BSS73 BSS74 BSS75 BSS76 BSS89 BSV1610 BSX20 CV12253 IRFD110 IRFD113 IRFD120 IRFD123 IRFD210 IRFD213 IRFD220 IRFD223 IRFD9120 IRFD9123 J111 J113 J203 J300 J305 MAD130P MAD1103P MAD1107P MAD1108P MAD1109P REPLACEMENT BC560C BC848ALT1 BC848ALT1 BC857ALT1 MPS2222A MPS2222A MPS2222A BDB01C BDB02C BDC01D MPSW42 2N3819 2N3819 BF245A BF245A BF245A BF245A BF245A BF245A BF245A BF256A BF256A BF422 BC338 MPSA42 MPSA42 MPSA92 MPSA92 2N5401 BF720T1 MPSA42 MPSA42 MPSA42 MPSA92 MPSA92 MPSA92 BS107 MPS2907A MPS2369A MPSA06 BSS123LT1 MMBF170LT1 BSS123LT1 MMBF170LT1 MMFT107T1 MMFT107T1 MMFT107T1 MMFT107T1 BSS123LT1 2N7002LT1 J111RLRA J113RL1 2N5458 2N5486 MMBF5484LT1 BAS16LT1 BAS16LT1 BAS16LT1 BAS16LT1 BAS16LT1
REPLACEMENT DEVICES
DEVICE MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1 MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1 MMPQ3799 MMSV3401T1 MPF970 MPF971 MPF3821 MPF3822 MPF4856 MPF4857 MPF4858 MPF4859 MPF4860 MPF4861 MPQ6501 MPS3638 MPS3866 MPS4123 MPS4125 MPS4258 MPS5771 MPS6520 REPLACEMENT 2N5551 MPS2222A 2N5401 BAS16LT1 MMBF4391LT1 MMBF5457LT1 MMBF5457LT1 2N5486 MMBT5551LT1 MMBV2103LT1 MMPQ3725 MMBV3401LT1 MMBFJ175LT1 MMBFJ175LT1 MMBF5457LT1 MMBF5457LT1 MPF4391RLRA 2N5639 J112 2N5638RLRA 2N5638RLRA J112 MPQ6502 MPS3638A BF224 MPS4124 MPS4126 MPS3640 MPS3640 MPS6521 DEVICE MPS6530 MPS6531 MPS6562 MPS6568A MPS6571 MPS6595 MPS8093 MPSA16 MPSH04 MPSH07A MPSH20 MPSH24 MPSH34 MPSH69 MSA1022BT1 MSB709ST1 MSB710QT1 MSB1218AST1 MSC1621T1 MSC2404CT1 MSD1819AST1 MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 MV2107 MV2113 REPLACEMENT MPS6530RLRM MPS6530RLRM MPS6651 MPS918 MPSA18 MPS3563 2N4402 MPSA17 MPSH17 MPSH17 MPSH17 MPSH17 MPSH17 MPSH81 MSA1022CT1 MSB709RT1 MSB710RT1 MSB1218ART1 MSD602RT1 MSC2295CT1 MSD1819ART1 MV2101 MMBV2103LT1 MV2108 MV2109 MV2111 MV2111 MMBV2103LT1 MV2108 MV2111 DEVICE MV2114 MVAM108 MVAM109 MVAM115 MVAM125 PBF259 PBF259S PBF259RS PBF493 PBF493R PBF493RS PBF493S VN1706L REPLACEMENT MV2115 MMBV2109LT1 MMBV2109LT1 MMBV2109LT1 MMBV2109LT1 MMBT6517LT1 MMBT6517LT1 MMBT6517LT1 MMBTA92LT1 MMBTA92LT1 MMBTA92LT1 MMBTA92LT1 MMFT107T1
Section 11
Alphanumeric Index
Alphanumeric Index 111
Alphanumeric Index
Device Page Device
BAT54LT1 . . . . . . . . . . . . . . . BAT54SLT1 . . . . . . . . . . . . . . BAT54SWT1 . . . . . . . . . . . . . BAT54T1 . . . . . . . . . . . . . . . . BAT54WT1 . . . . . . . . . . . . . . BAV70LT1 . . . . . . . . . . . . . . . BAV70WT1 . . . . . . . . . . . . . . BAV74LT1 . . . . . . . . . . . . . . . BAV99LT1 . . . . . . . . . . . . . . . BAV99RWT1 . . . . . . . . . . . .
Page
130, 527 130, 529 130, 531 130, 533 130, 535 133, 537 133, 539 133, 542 133, 544 133, 547
Device
Page
1N5148 . . . . . . . . . . . . . 123, 124, 53 1N5148A . . . . . . . . . . . . . . . . . . . . . . . 53 1N5446ARL . . . . . . . . . . . . . . 124, 56 1N5448ARL . . . . . . . . . . . . . . 124, 56 1N5456A . . . . . . . . . . . . 123, 124, 56 2N3903 . . . . . . . . . . . . . . . . . . . 12, 23 2N3904 . . . . . . . . . . . . . . . . . . . 12, 23 2N3905 . . . . . . . . . . . . . . . . . . . 12, 29 2N3906 . . . . . . . . . . . . . . . . . . . 12, 29 2N4123 . . . . . . . . . . . . . . . . . . 12, 214 2N4124 2N4125 2N4264 2N4400 2N4401 2N4402 2N4403 2N4410 2N5087 2N5088 2N5089 2N5209 2N5210 2N5400 2N5401 2N5457 2N5458 2N5460 2N5461 2N5462 2N5484 2N5485 2N5486 2N5550 2N5551 2N5555 2N5639 2N5640 2N6426 2N6427 .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. 12, 214 12, 218 16, 222 12, 227 12, 227 12, 232 12, 232 12, 237 13, 241 13, 247
BC517 . . . . . . . . . . . . . . . . . . . 14, 2111 BC546 . . . . . . . . . . . . . . . . . . 12, 2116 BC546B . . . . . . . . . . . . . . . . . 12, 2116 BC547 . . . . . . . . . . . . . . . . . . 12, 2116 BC547A . . . . . . . . . . . . . . . . . 12, 2116 BC547B . . . . . . . . . . . . . . . . . 12, 2116 BC547C . . . . . . . . . . . . . . . . . 12, 2116 BC548 . . . . . . . . . . . . . . . . . . 12, 2116 BC548A . . . . . . . . . . . . . . . . . 12, 2116 BC548B . . . . . . . . . . . . . . . . . 12, 2116 BC548C . . . . . . . . . . . . . . . . . BC549B . . . . . . . . . . . . . . . . . BC549C . . . . . . . . . . . . . . . . . BC550B . . . . . . . . . . . . . . . . . BC550C . . . . . . . . . . . . . . . . . BC556 . . . . . . . . . . . . . . . . . . BC556B . . . . . . . . . . . . . . . . . BC557 . . . . . . . . . . . . . . . . . . BC557A . . . . . . . . . . . . . . . . . BC557B . . . . . . . . . . . . . . . . . 12, 2116 13, 2120 13, 2120 13, 2120 13, 2120 12, 2123 12, 2123 12, 2123 12, 2123 12, 2123
BAV99WT1 . . . . . . . . . . . . . . 133, 547 BAV170LT1 . . . . . . . . . . . . . . 134, 550 BAV199LT1 . . . . . . . . . . . . . . 134, 552 BAW56LT1 . . . . . . . . . . . . . . 133, 554 BAW56WT1 . . . . . . . . . . . . . 133, 556 BAW156LT1 . . . . . . . . . . . . . 134, 558 BC182 . . . . . . . . . . . . . . . . . . . 12, 279 BC182A . . . . . . . . . . . . . . . . . . . . . . . 279 BC182B . . . . . . . . . . . . . . . . . . . . . . . 279 BC183 . . . . . . . . . . . . . . . . . . . . . . . . 279 BC184 . . . . . . . . . . . . . . . . . . . . . . . . 279 BC212 . . . . . . . . . . . . . . . . . . . 12, 282 BC212B . . . . . . . . . . . . . . . . . . . . . . . 282 BC213 . . . . . . . . . . . . . . . . . . . . . . . . 282 BC214 . . . . . . . . . . . . . . . . . . . . . . . . 282 BC237 . . . . . . . . . . . . . . . . . . . . . . . . 285 BC237A . . . . . . . . . . . . . . . . . . . . . . . 285 BC237B . . . . . . . . . . . . . . . . . . 12, 285 BC237C . . . . . . . . . . . . . . . . . . . . . . . 285 BC238B . . . . . . . . . . . . . . . . . . . . . . . 285 BC238C . . . . . . . . . . . . . . . . . . . . . . . 285 BC239 . . . . . . . . . . . . . . . . . . . 13, 285 BC239C . . . . . . . . . . . . . . . . . . . . . . . 285 BC307 . . . . . . . . . . . . . . . . . . . . . . . . 288 BC307B . . . . . . . . . . . . . . . . . . 12, 288 BC307C . . . . . . . . . . . . . . . . . . . . . . . 288 BC308C . . . . . . . . . . . . . . . . . . . . . . . 288 BC327 . . . . . . . . . . . . . . . . . . . 12, 291 BC32716 . . . . . . . . . . . . . . . . . . . . . 291 BC32725 . . . . . . . . . . . . . . . . . . . . . 291 BC328 . . . . . . . . . . . . . . . . . . . 12, 291 BC32816 . . . . . . . . . . . . . . . . . . . . . 291 BC32825 . . . . . . . . . . . . . . . . . . . . . 291 BC337 . . . . . . . . . . . . . . . . . . . 12, 294 BC33716 . . . . . . . . . . . . . . . . . . . . . 294 BC33725 . . . . . . . . . . . . . . . . . . . . . 294 BC33740 . . . . . . . . . . . . . . . . . . . . . 294 BC338 . . . . . . . . . . . . . . . . . . . 12, 294 BC33816 . . . . . . . . . . . . . . . . . . . . . 294 BC33825 . . . . . . . . . . . . . . . . . . . . . 294 BC33840 . . . . . . . . . . . . . . . . . . . . . 294 BC368 . . . . . . . . . . . . . . . . . . . 14, 297 BC369 . . . . . . . . . . . . . . . . . . . 14, 297 BC372 . . . . . . . . . . . . . . . . . . . . . . . . 299 BC373 . . . . . . . . . . . . . . . . . . . 14, 299 BC489 . . . . . . . . . . . . . . . . . . 14, 2101 BC489A . . . . . . . . . . . . . . . . . . . . . . 2101 BC489B . . . . . . . . . . . . . . . . . . . . . . 2101 BC490 . . . . . . . . . . . . . . . . . . 14, 2106 BC490A . . . . . . . . . . . . . . . . . . . . . . 2106
. . . . . . . . . . . . . . . . . . 13, 247 . . . . . . . . . . . . . . . . . . . . . . . 251 . . . . . . . . . . . . . . . . . . . . . . . 251 . . . . . . . . . . . . . . . . . . . . . . . 255 . . . . . . . . . . . . . . . . . . 15, 255 . . . . . . . . . . . . . . . . 118, 4110 . . . . . . . . . . . . . . . . . . . . . . . 118 . . . . . . . . . . . . . . . . 118, 4113 . . . . . . . . . . . . . . . . 118, 4113 . . . . . . . . . . . . . . . . 118, 4113 . . . . . . . . . . . . . . . . 118, 4116 . . . . . . . . . . . . . . . . . . . . . . . 118 . . . . . . . . . . . . . . . . 118, 4116 . . . . . . . . . . . . . . . . . . . . . . . 259 . . . . . . . . . . . . . . . . . . 15, 259 . . . . . . . . . . . . . . . . 119, 4123 . . . . . . . . . . . . . . . . . . . . . . . 119 . . . . . . . . . . . . . . . . 119, 4130 . . . . . . . . . . . . . . . . . . 14, 264 . . . . . . . . . . . . . . . . . . 14, 264
BC557C . . . . . . . . . . . . . . . . . 12, 2123 BC558B . . . . . . . . . . . . . . . . . 12, 2123 BC559B . . . . . . . . . . . . . . . . . 13, 2128 BC559C . . . . . . . . . . . . . . . . . 13, 2128 BC560C . . . . . . . . . . . . . . . . . 13, 2128 BC618 . . . . . . . . . . . . . . . . . . 14, 2131 BC635 . . . . . . . . . . . . . . . . . . . . . . . 2136 BC636 . . . . . . . . . . . . . . . . . . . . . . . 2139 BC637 . . . . . . . . . . . . . . . . . . . . . . . 2136 BC638 . . . . . . . . . . . . . . . . . . . . . . . 2139 BC639 . . . . . . . . . . . . . . . . . . 14, 2136 BC640 . . . . . . . . . . . . . . . . . . 14, 2139 BC80716LT1 . . . . . . . . . . 110, 2142 BC80725LT1 . . . . . . . . . . 110, 2142 BC80740LT1 . . . . . . . . . . 110, 2142 BC80825WT1 . . . . . . . . . . . . . . . . 111 BC80840WT1 . . . . . . . . . . . . . . . . 111 BC81716LT1 . . . . . . . . . . 110, 2144 BC81725LT1 . . . . . . . . . . 110, 2144 BC81740LT1 . . . . . . . . . . 110, 2144 BC81825WT1 . . . . . . . . . . . . . . . . 111 BC81840WT1 . . . . . . . . . . . . . . . . 111 BC818WT1 . . . . . . . . . . . . . . . . . . . . 111 BC846ALT1 . . . . . . . . . . . . 110, 2146 BC846AWT1 . . . . . . . . . . . . 111, 2150 BC846BLT1 . . . . . . . . . . . . 110, 2146 BC846BWT1 . . . . . . . . . . . 111, 2150 BC847ALT1 . . . . . . . . . . . . 110, 2146 BC847AWT1 . . . . . . . . . . . . 111, 2150 BC847BLT1 . . . . . . . . . . . . 110, 2146 BC847BWT1 . . . . . . . . . . . 111, 2150 BC847CLT1 . . . . . . . . . . . . 110, 2146 BC847CWT1 . . . . . . . . . . . 111, 2150 BC848ALT1 . . . . . . . . . . . . 110, 2146 BC848AWT1 . . . . . . . . . . . . 111, 2150 BC848BLT1 . . . . . . . . . . . . 110, 2146 BC848BWT1 . . . . . . . . . . . 111, 2150 BC848CLT1 . . . . . . . . . . . . 110, 2146 BC848CWT1 . . . . . . . . . . . 111, 2150 BC849BLT1 . . . . . . . . . . . . . . . . . . 2146
2N6515 . . . . . . . . . . . . . . . . . . . . . . . 269 2N6517 . . . . . . . . . . . . . . . . . . 15, 269 2N6519 . . . . . . . . . . . . . . . . . . 15, 269 2N6520 . . . . . . . . . . . . . . . . . . 15, 269 2N7000 . . . . . . . . . . . . . . . . . . 120, 43 2N7002LT1 . . . . . . . . . . 122, 137, 45 2N7008 . . . . . . . . . . . . . . . . . . . . . . . 120 2SA1774 . . . . . . . . . . . . . . . . 112, 275 2SC4617 . . . . . . . . . . . . . . . . 112, 277 BAL99LT1 . . . . . . . . . . . . . . . . 132, 59 BAS16LT1 . . . . . . . . . . . . . . . BAS16WT1 . . . . . . . . . . . . . . BAS21LT1 . . . . . . . . . . . . . . . BAS4004LT1 . . . . . . . . . . . BAS4006LT1 . . . . . . . . . . . BAS40LT1 . . . . . . . . . . . . . . . BAS7004LT1 . . . . . . . . . . . BAS70LT1 . . . . . . . . . . . . . . . BAS116LT1 . . . . . . . . . . . . . . BAT54ALT1 . . . . . . . . . . . . . . 132, 511 132, 513 132, 516 130, 519 130, 520 130, 518 130, 522 130, 521 133, 523 130, 525
Alphanumeric Index
Device Page Device Page Device Page
BC849CLT1 . . . . . . . . . . . . . . . . . . 2146 BC850BLT1 . . . . . . . . . . . . . . . . . . 2146 BC850CLT1 . . . . . . . . . . . . . . . . . . 2146 BC856ALT1 . . . . . . . . . . . . 110, 2154 BC856AWT1 . . . . . . . . . . . . 111, 2159 BC856BLT1 . . . . . . . . . . . . 110, 2154 BC856BWT1 . . . . . . . . . . . 111, 2159 BC857ALT1 . . . . . . . . . . . . 110, 2154 BC857AWT1 . . . . . . . . . . . . 111, 2159 BC857BLT1 . . . . . . . . . . . . 110, 2154 BC857BWT1 . . . . . . . . . . . BC858ALT1 . . . . . . . . . . . . BC858AWT1 . . . . . . . . . . . . BC858BLT1 . . . . . . . . . . . . BC858BWT1 . . . . . . . . . . . BC858CLT1 . . . . . . . . . . . . BC858CWT1 . . . . . . . . . . . BCP53T1 . . . . . . . . . . . . . . BCP56T1 . . . . . . . . . . . . . . BCP68T1 . . . . . . . . . . . . . . 111, 2159 110, 2154 111, 2159 110, 2154 111, 2159 110, 2154 111, 2159 116, 2164 116, 2166 117, 2169 BS107 . . . . . . . . . . . . . . . . . . . 120, 48 BS107A . . . . . . . . . . . . . . . . . . 120, 48 BS170 . . . . . . . . . . . . . . . . . . 120, 411 BSP16T1 . . . . . . . . . . . . . . . 117, 2264 BSP19AT1 . . . . . . . . . . . . . 117, 2266 BSP52T1 . . . . . . . . . . . . . . . 117, 2268 BSP62T1 . . . . . . . . . . . . . . . 117, 2270 BSS63LT1 . . . . . . . . . . . . . . 116, 2273 BSS64LT1 . . . . . . . . . . . . . . 116, 2275 BSS84LT1 . . . . . 122, 137, 32, 413 BSS123LT1 . . . . . . . . 122, 137, 416 BSS138LT1 . . . 122, 137, 35, 418 BSV52LT1 . . . . . . . . . . . . . . 114, 2277 DAN222 . . . . . . . . . . . . . . . . . 133, 560 DAP222 . . . . . . . . . . . . . . . . . 133, 562 DTA114YE . . . . . . . . . . . . . 113, 2279 DTA143EE . . . . . . . . . . . . . 113, 2281 DTC114TE . . . . . . . . . . . . . 113, 2282 DTC114YE . . . . . . . . . . . . . 113, 2283 J110 . . . . . . . . . . . . . . . . . . . . . . . . . . 119 J112 . . . . . . . . . . . . . . . . . . . 119, 4138 J202 . . . . . . . . . . . . . . . . . . . 118, 4141 J304 . . . . . . . . . . . . . . . . . . . . . . . . . 4144 J308 . . . . . . . . . . . . . . . . . . . 118, 4151 J309 . . . . . . . . . . . . . . . . . . . 118, 4151 J310 . . . . . . . . . . . . . . . . . . . 118, 4151 M1MA141KT1 . . . . . . . . . . . 132, 564 M1MA141WAT1 . . . . . . . . . . 133, 566 M1MA141WKT1 . . . . . . . . . 133, 568 M1MA142KT1 . . . . . . . . . . . 132, 564 M1MA142WAT1 . . . . . . . . . . 133, 566 M1MA142WKT1 . . . . . . . . . 133, 568 M1MA151AT1 . . . . . . . . . . . 132, 570 M1MA151KT1 . . . . . . . . . . . 132, 572 M1MA151WAT1 . . . . . . . . . . 133, 574 M1MA151WKT1 . . . . . . . . . 133, 576 M1MA152AT1 . . . . . . . . . . . . . . . . . 570 M1MA152KT1 . . . . . . . . . . . . . . . . . 572 M1MA152WAT1 . . . . . . . . . . . . . . . . 574 M1MA152WKT1 . . . . . . . . . . . . . . . 576 M1MA174T1 . . . . . . . . . . . . . . . . . . . 132 MBD54DWT1 . . . . . . . . . . . . . . . . . . 578 MBD101 . . . . . . . . . . . 129, 130, 580 MBD110DWT1 . . . . . . . . . . . 130, 582 MBD301 . . . . . . . . . . . 129, 130, 587 MBD330DWT1 . . . . . . . . . . . 130, 582 MBD701 . . . . . . . . . . . 129, 130, 589 MBD770DWT1 . . . . . . . . . . . 130, 582 MBF4416DW1T1 . . . . . . . . . . . . . . . 121 MBF5457DW1T1 . . . . . . . . . . . . . . . 121 MBT3904DW1T1 . . . . . . . . 111, 2286 MBT3904DW9T1 . . . . . . . . . . . . . . . 111 MBT3906DW1T1 . . . 111, 112, 2286 MBT3906DW9T1 . . . . . . . . . . . . . . . 111 MBT3946DW1T1 . . . . . . . . . . . . . . 2286 MBV109T1 . . . . . . . . . . . . . . 128, 591 MDC3105LT1 . . . . . . . . . . . 138, 2818 MDC5001T1 . . . . . . . . . . . . 138, 2823 MGSF1N02LT1 122, 137, 39, 422 MGSF1N03LT1 122, 137, 312, 425 MGSF1P02ELT1122, 137, 315, 428 MGSF1P02LT1 122, 137, 317, 430 MGSF3441VT1 . . . . . 137, 320, 433 MGSF3441XT1 . . . . . 137, 324, 437 MGSF3442VT1 . . . . . 137, 326, 439 MGSF3442XT1 . . . . . 137, 330, 443 MGSF3454VT1 . . . . . 137, 332, 445 MGSF3454XT1 . . . . . 137, 336, 449 MGSF3455VT1 . . . . . 137, 340, 453 MGSF3455XT1 . . . . . 137, 344, 457 MMAD130 . . . . . . . . . . . . . . . 135, 593 MMAD1103 . . . . . . . . . . . . . . 135, 593 MMAD1105 . . . . . . . . . . . . . . 135, 593 MMAD1106 . . . . . . . . . . . . . . . . . . . . 135 MMAD1107 . . . . . . . . . . . . . . 135, 593 MMAD1108 . . . . . . . . . . . . . . 135, 596 MMAD1109 . . . . . . . . . . . . . . 135, 593 MMBD101LT1 . . . . . . 129, 130, 580 MMBD301LT1 . . . . . . 129, 130, 587 MMBD330T1 . . . . . . . . . . . . . . . . . . 130 MMBD352LT1 . . . . . . 129, 130, 599 MMBD352WT1 . . . . . . . . . 130, 5101 MMBD353LT1 . . . . . . 129, 130, 599 MMBD354LT1 . . . . . . 129, 130, 599 MMBD355LT1 . . . . . . . . . . . . . . . . . 599 MMBD452LT1 . . . . . . . . . . . . . . . . 5103 MMBD701LT1 . . . . . . 129, 130, 589 MMBD717LT1 . . . . . . . . . . . . . . . . 5105 MMBD770T1 . . . . . . . . . . . . . . . . . . 130 MMBD914LT1 . . . . . . . . . . 132, 5107 MMBD1000LT1133, 137, 346, 5109 MMBD1005LT1 134, 137, 348, 5111 MMBD1010LT1134, 137, 350, 5113 MMBD2000T1 133, 137, 346, 5109 MMBD2005T1 134, 137, 348, 5111 MMBD2010T1 134, 137, 350, 5113 MMBD2835LT1 . . . . . . . . . 133, 5115 MMBD2836LT1 . . . . . . . . . 133, 5115 MMBD2837LT1 . . . . . . . . . 133, 5117 MMBD2838LT1 . . . . . . . . . 133, 5117 MMBD3000T1 133, 137, 346, 5109 MMBD3005T1 134, 137, 348, 5111 MMBD3010T1 134, 137, 350, 5113 MMBD6050LT1 . . . . . . . . . 132, 5119 MMBD6100LT1 . . . . . . . . . 133, 5121 MMBD7000LT1 . . . . . . . . . 133, 5123 MMBF170LT1 . . . . . . . . . . . . 122, 459 MMBF0201NLT1122, 137, 352, 461 MMBF0202PLT1122, 137, 356, 465 MMBF2201NT1 122, 137, 360, 469 MMBF2201PT1 . . . . . . . . . . . . . . . . 122 MMBF2202PT1 . . . . . 137, 363, 472 MMBF4391LT1 . . . . . . . . . . 122, 4156 MMBF4392LT1 . . . . . . . . . . 122, 4156 MMBF4393LT1 . . . . . . . . . . 122, 4156 MMBF4416LT1 . . . . . . . . . . 121, 4160 MMBF5457LT1 . . . . . . . . . . 121, 4167 MMBF5460LT1 . . . . . . . . . . 121, 4170 MMBF5484LT1 . . . . . . . . . . 121, 4173 MMBFJ175LT1 . . . . . . . . . . 122, 4180
BCP69T1 . . . . . . . . . . . . . . 117, 2172 BCW29LT1 . . . . . . . . . . . . . . . . . . . 2174 BCW30LT1 . . . . . . . . . . . . . . . . . . . 2174 BCW33LT1 . . . . . . . . . . . . . . . . . . . 2180 BCW60ALT1 . . . . . . . . . . . . . . . . . . 2186 BCW60BLT1 . . . . . . . . . . . . . . . . . . 2186 BCW60DLT1 . . . . . . . . . . . . . . . . . 2186 BCW61BLT1 . . . . . . . . . . . . . . . . . . 2192 BCW61CLT1 . . . . . . . . . . . . . . . . . 2192 BCW61DLT1 . . . . . . . . . . . . . . . . . 2192 BCW65ALT1 . . . . . . . . . . . . . . . . . . BCW68GLT1 . . . . . . . . . . . . . . . . . BCW69LT1 . . . . . . . . . . . . . . . . . . . BCW70LT1 . . . . . . . . . . . . . . . . . . . BCW72LT1 . . . . . . . . . . . . . . . . . . . BCX17LT1 . . . . . . . . . . . . . . . . . . . BCX18LT1 . . . . . . . . . . . . . . . . . . . BCX19LT1 . . . . . . . . . . . . . . . . . . . BCX20LT1 . . . . . . . . . . . . . . . . . . . BCX70GLT1 . . . . . . . . . . . . . . . . . . 2198 2200 2202 2202 2208 2214 2214 2214 2214 2216
BCX70JLT1 . . . . . . . . . . . . . . . . . . 2216 BCX70KLT1 . . . . . . . . . . . . . . . . . . 2216 BDB01C . . . . . . . . . . . . . . . . 13, 2222 BDB02C . . . . . . . . . . . . . . . . 13, 2225 BDC01D . . . . . . . . . . . . . . . . 13, 2228 BF199 . . . . . . . . . . . . . . . . . . 16, 2231 BF224 . . . . . . . . . . . . . . . . . . 16, 2235 BF240 . . . . . . . . . . . . . . . . . . . . . . . 2239 BF393 . . . . . . . . . . . . . . . . . . 15, 2242 BF420 . . . . . . . . . . . . . . . . . . 15, 2245 BF421 . . . . . . . . . . . . . . . . . . 15, 2248 BF422 . . . . . . . . . . . . . . . . . . 15, 2245 BF423 . . . . . . . . . . . . . . . . . . 15, 2248 BF493S . . . . . . . . . . . . . . . . . 15, 2251 BF720T1 . . . . . . . . . . . . . . . 117, 2254 BF721T1 . . . . . . . . . . . . . . . 117, 2256 BF844 . . . . . . . . . . . . . . . . . . 15, 2258 BF959 . . . . . . . . . . . . . . . . . . 16, 2262 BFR30LT1 . . . . . . . . . . . . . . . . . . . . 4134 BFR31LT1 . . . . . . . . . . . . . . . . . . . . 4134
Alphanumeric Index
Device Page Device Page Device Page
MMBFJ177LT1 . . . . . . . . . . 122, 4181 MMBFJ309LT1 . . . . . . . . . . 121, 4182 MMBFJ310LT1 . . . . . . . . . . 121, 4182 MMBFU310LT1 . . . . . . . . . 121, 4186 MMBT404ALT1 . . . . . . . . . 115, 2296 MMBT918LT1 . . . . . . . . . . . 114, 2298 MMBT1010LT1116, 136, 2300, 367 MMBT2222ALT1 . . . . . . . . 110, 2303 MMBT2222AWT1 . . . . . . . 111, 2301 MMBT2222LT1 . . . . . . . . . . . . . . . . 2303 MMBT2369ALT1 . . . . . . . . 114, 2308 MMBT2369LT1 . . . . . . . . . . 114, 2308 MMBT2484LT1 . . . . . . . . . . 115, 2313 MMBT2907ALT1 . . . . . . . . 110, 2319 MMBT2907AWT1 . . . . . . . 111, 2317 MMBT2907LT1 . . . . . . . . . . . . . . . . 2319 MMBT3640LT1 . . . . . . . . . . 114, 2323 MMBT3904LT1 . . . . . . . . . . 110, 2326 MMBT3904WT1 . . . . . . . . . 111, 2332 MMBT3906LT1 . . . . . . . . . . 110, 2341 MMBT3906WT1 . . . . . . . . . 111, 2332 MMBT4401LT1 . . . . . . . . . . 110, 2346 MMBT4403LT1 . . . . . . . . . . 110, 2351 MMBT5087LT1 . . . . . . . . . . 115, 2356 MMBT5088LT1 . . . . . . . . . . . . . . . . 2362 MMBT5089LT1 . . . . . . . . . . 115, 2362 MMBT5401LT1 . . . . . . . . . . 116, 2366 MMBT5550LT1 . . . . . . . . . . . . . . . . 2370 MMBT5551LT1 . . . . . . . . . . 116, 2370 MMBT6427LT1 . . . . . . . . . . . . . . . . 2374 MMBT6428LT1 . . . . . . . . . . 115, 2379 MMBT6429LT1 . . . . . . . . . . 115, 2379 MMBT6517LT1 . . . . . . . . . . 116, 2383 MMBT6520LT1 . . . . . . . . . . 116, 2388 MMBTA05LT1 . . . . . . . . . . . . . . . . . 2393 MMBTA06LT1 . . . . . . . . . . . 116, 2393 MMBTA13LT1 . . . . . . . . . . . 115, 2395 MMBTA14LT1 . . . . . . . . . . . 115, 2395 MMBTA20LT1 . . . . . . . . . . . . . . . . . 2400 MMBTA42LT1 . . . . . . . . . . . 116, 2406 MMBTA43LT1 . . . . . . . . . . . . . . . . . 2406 MMBTA55LT1 . . . . . . . . . . . . . . . . . 2409 MMBTA56LT1 . . . . . . . . . . . 116, 2409 MMBTA63LT1 . . . . . . . . . . . . . . . . . 2410 MMBTA64LT1 . . . . . . . . . . . 115, 2410 MMBTA70LT1 . . . . . . . . . . . . . . . . . 2412 MMBTA92LT1 . . . . . . . . . . . 116, 2417 MMBTA93LT1 . . . . . . . . . . . . . . . . . 2417 MMBTH10LT1 . . . . . . . . . . 114, 2420 MMBTH24LT1 . . . . . . . . . . 114, 2424 MMBTH69LT1 . . . . . . . . . . 114, 2426 MMBTH81LT1 . . . . . . . . . . 114, 2427 MMBV105GLT1 . . . . 126, 128, 5125 MMBV109LT1 . . . . . . 126, 128, 591 MMBV409LT1 . . . . . 127, 128, 5127 MMBV432LT1 . . . . . 123, 125, 5129 MMBV609LT1 . . . . . 127, 128, 5131 MMBV809LT1 . . . . . 127, 128, 5133 MMBV2101LT1 . . . . 123, 125, 5135 MMBV2103LT1 . . . . . . . . . 125, 5135 MMBV2105LT1 . . . . 123, 125, 5135 MMBV2107LT1 . . . . . . . . . 125, 5135 MMBV2108LT1 . . . . . . . . . 125, 5135 MMBV2109LT1 . . . . 123, 125, 5135 MMBV3102LT1 . . . . 127, 128, 5138 MMBV3401LT1 . . . . 131, 132, 5140 MMBV3700LT1 . . . . 131, 132, 5142 MMFT107T1 . . . . . . . . . . . . . 122, 476 MMFT960T1 . . . . . . . . . . . . . 122, 479 MMFT2406T1 . . . . . . . . . . . . 122, 482 MMFT6661T1 . . . . . . . . . . . . 122, 484 MMPQ2222 . . . . . . . . . . . . . . . . . . 2428 MMPQ2222A . . . . . . . . . . . . 19, 2428 MMPQ2369 . . . . . . . . . . . . . 19, 2430 MMPQ2907 . . . . . . . . . . . . . . . . . . 2432 MMPQ2907A . . . . . . . . . . . . 19, 2432 MMPQ3467 . . . . . . . . . . . . . 19, 2434 MMPQ3725 . . . . . . . . . . . . . 19, 2436 MMPQ3904 . . . . . . . . . . . . . 19, 2438 MMPQ3906 . . . . . . . . . . . . . 19, 2440 MMPQ6700 . . . . . . . . . . . . . 19, 2442 MMPQ6842 . . . . . . . . . . . . . . . . . . 2443 MMSD71RKT1 . . . . . . . . . . . . . . . . . 132 MMSD101T1 . . . . . . . . . . . . . . . . . . 130 MMSD301T1 . . . . . . . . . . . 130, 5144 MMSD701T1 . . . . . . . . . . . 130, 5144 MMSD914T1 . . . . . . . . . . . 132, 5147 MMSD1000T1 133, 137, 346, 5109 MMUN2111LT1 . . . . . . . . . 112, 2445 MMUN2112LT1 . . . . . . . . . 112, 2445 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... 112, 2445 112, 2445 112, 2445 112, 2446 112, 2446 112, 2446 112, 2446 112, 2446 112, 2446 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 MPN3404 . . . . . . . . . 131, 132, 5149 MPN3700 . . . . . . . . . 131, 132, 5142 MPQ2222 . . . . . . . . . . . . . . . . . . . . 2460 MPQ2222A . . . . . . . . . . . . . . 19, 2460 MPQ2369 . . . . . . . . . . . . . . . 19, 2465 MPQ2483 . . . . . . . . . . . . . . . 19, 2469 MPQ2484 . . . . . . . . . . . . . . . 19, 2469 MPQ2906 . . . . . . . . . . . . . . . . . . . . 2471 MPQ2907 . . . . . . . . . . . . . . . . . . . . 2471 MPQ2907A . . . . . . . . . . . . . . 19, 2471 MPQ3467 . . . . . . . . . . . . . . . MPQ3725 . . . . . . . . . . . . . . . MPQ3762 . . . . . . . . . . . . . . . MPQ3798 . . . . . . . . . . . . . . . MPQ3799 . . . . . . . . . . . . . . . MPQ3904 . . . . . . . . . . . . . . . MPQ3906 . . . . . . . . . . . . . . . MPQ6001 . . . . . . . . . . . . . . . MPQ6002 . . . . . . . . . . . . . . . MPQ6100A . . . . . . . . . . . . . . 19, 2476 19, 2479 19, 2483 19, 2486 19, 2486 19, 2489 19, 2495 19, 2500 19, 2500 19, 2503
MPQ6426 . . . . . . . . . . . . . . . 19, 2506 MPQ6502 . . . . . . . . . . . . . . . 19, 2500 MPQ6600A1 . . . . . . . . . . . . . 19, 2503 MPQ6700 . . . . . . . . . . . . . . . 19, 2509 MPQ6842 . . . . . . . . . . . . . . . 19, 2514 MPQ7041 . . . . . . . . . . . . . . . . . . . . 2518 MPQ7042 . . . . . . . . . . . . . . . 19, 2518 MPQ7043 . . . . . . . . . . . . . . . 19, 2518 MPQ7051 . . . . . . . . . . . . . . . 19, 2520 MPQ7091 . . . . . . . . . . . . . . . . . . . . 2523 MPQ7093 . . . . . . . . . . . . . . . 19, 2523 MPS404A . . . . . . . . . . . . . . . 17, 2525 MPS650 . . . . . . . . . . . . . . . . 14, 2529 MPS651 . . . . . . . . . . . . . . . . 14, 2529 MPS750 . . . . . . . . . . . . . . . . 14, 2529 MPS751 . . . . . . . . . . . . . . . . 14, 2529 MPS918 . . . . . . . . . . . . . . . . 16, 2532 MPS2222 . . . . . . . . . . . . . . . . . . . . 2534 MPS2222A . . . . . . . . . . . . . . 12, 2534 MPS2369 . . . . . . . . . . . . . . . . . . . . 2539 MPS2369A . . . . . . . . . . . . . . 16, 2539 MPS2907 . . . . . . . . . . . . . . . . . . . . 2542 MPS2907A . . . . . . . . . . . . . . 12, 2542 MPS3563 . . . . . . . . . . . . . . . 16, 2532 MPS3638A . . . . . . . . . . . . . . . . . . . 2546 MPS3640 . . . . . . . . . . . . . . . . . . . . 2552 MPS3646 . . . . . . . . . . . . . . . 16, 2555 MPS3904 . . . . . . . . . . . . . . . 13, 2560 MPS3906 . . . . . . . . . . . . . . . 13, 2566 MPS4124 . . . . . . . . . . . . . . . . . . . . 2572 MPS4126 MPS4250 MPS5179 MPS6428 MPS6507 MPS6521 MPS6523 MPS6560 MPS6601 MPS6602 . . . . . . . . . . . . . . . . . . . . 2574 . . . . . . . . . . . . . . . 13, 2576 . . . . . . . . . . . . . . . 16, 2578 . . . . . . . . . . . . . . . 13, 2580 . . . . . . . . . . . . . . . . . . . . 2582 . . . . . . . . . . . . . . . 13, 2583 . . . . . . . . . . . . . . . 13, 2583 . . . . . . . . . . . . . . . . . . . . 2594 . . . . . . . . . . . . . . . . . . . . 2596 . . . . . . . . . . . . . . . 12, 2596
MPF102 . . . . . . . . . . . . . . . . 118, 4190 MPF910 . . . . . . . . . . . . . . . . . 120, 487 MPF930 . . . . . . . . . . . . . . . . . 120, 490 MPF960 . . . . . . . . . . . . . . . . . 120, 490 MPF990 . . . . . . . . . . . . . . . . . 120, 490 MPF4392 . . . . . . . . . . . . . . 119, 4197 MPF4393 . . . . . . . . . . . . . . 119, 4197 MPF6659 . . . . . . . . . . . . . . . 120, 493 MPF6660 . . . . . . . . . . . . . . . 120, 493 MPF6661 . . . . . . . . . . . . . . . 120, 493
Alphanumeric Index
Device
MPS6651 MPS6652 MPS6714 MPS6715 MPS6717 MPS6724 MPS6725 MPS6726 MPS6727 MPS8098
Page
Device
Page
Device
MUN5211DW1T1 . . . . . . . . MUN5211T1 . . . . . . . . . . . . MUN5212DW1T1 . . . . . . . MUN5212T1 . . . . . . . . . . . . MUN5213DW1T1 . . . . . . . MUN5213T1 . . . . . . . . . . . . MUN5214DW1T1 . . . . . . . MUN5214T1 . . . . . . . . . . . . MUN5215DW1T1 . . . . . . . MUN5215T1 . . . . . . . . . . . . MUN5216DW1T1 . . . . . . . MUN5216T1 . . . . . . . . . . . . MUN5230DW1T1 . . . . . . . MUN5230T1 . . . . . . . . . . . . MUN5231DW1T1 . . . . . . . MUN5231T1 . . . . . . . . . . . . MUN5232DW1T1 . . . . . . . MUN5232T1 . . . . . . . . . . . . MUN5233DW1T1 . . . . . . . MUN5233T1 . . . . . . . . . . . . MUN5234DW1T1 . . . . . . . MUN5234T1 . . . . . . . . . . . . MUN5235DW1T1 . . . . . . . MUN5311DW1T1 . . . . . . . . MUN5312DW1T1 . . . . . . . MUN5313DW1T1 . . . . . . . MUN5314DW1T1 . . . . . . . MUN5315DW1T1 . . . . . . . MUN5316DW1T1 . . . . . . . MUN5330DW1T1 . . . . . . .
Page
113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2777 113, 2777 113, 2777 113, 2777 113, 2777 113, 2777 113, 2777
. . . . . . . . . . . . . . . . . . . . 2596 . . . . . . . . . . . . . . . 12, 2596 . . . . . . . . . . . . . . . . . . . . 2602 . . . . . . . . . . . . . . . 14, 2602 . . . . . . . . . . . . . . . 13, 2605 . . . . . . . . . . . . . . . . . . . . 2608 . . . . . . . . . . . . . . . . . . . . 2608 . . . . . . . . . . . . . . . . . . . . 2611 . . . . . . . . . . . . . . . 14, 2611 . . . . . . . . . . . . . . . . . . . . 2614
MSB709RT1 . . . . . . . . . . . 111, 2717 MSB710RT1 . . . . . . . . . . . 111, 2718 MSB1218ART1 . . . . . . . . 111, 2720 MSC2295BT1 . . . . . . . . . 114, 2723 MSC2295CT1 . . . . . . . . . 114, 2723 MSC3130T1 . . . . . . . . . . . . 114, 2724 MSC3930BT1 . . . . . . . . . . . . . . . . 111 MSD601RT1 . . . . . . . . . . 111, 2725 MSD601ST1 . . . . . . . . . . . 111, 2725 MSD602RT1 . . . . . . . . . . 111, 2726 MSD1010T1 . 116, 136, 2300, 367 MSD1328RT1 . . . . . . . . . 111, 2727 MSD1819ART1 . . . . . . . . 111, 2728 MSD6100 . . . . . . . . . . . . . . . . . . . . 5151 MSD6150 . . . . . . . . . . . . . . . . . . . . 5153 MUN2111T1 . . . . . . . . . . . . 112, 2731 MUN2112T1 . . . . . . . . . . . . 112, 2731 MUN2113T1 . . . . . . . . . . . . 112, 2731 MUN2114T1 . . . . . . . . . . . . 112, 2731 MUN2115T1 . . . . . . . . . . . . 112, 2731 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 ............ ............ ............ ............ ............ ............ ............ ............ ............ ............ 112, 2731 112, 2731 112, 2731 112, 2731 112, 2731 112, 2731 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746
MPS8099 . . . . . . . . . . . . . . . 12, 2614 MPS8598 . . . . . . . . . . . . . . . . . . . . 2614 MPS8599 . . . . . . . . . . . . . . . 12, 2614 MPSA05 . . . . . . . . . . . . . . . . 12, 2619 MPSA06 . . . . . . . . . . . . . . . . 12, 2619 MPSA13 . . . . . . . . . . . . . . . . 14, 2624 MPSA14 . . . . . . . . . . . . . . . . 14, 2624 MPSA17 . . . . . . . . . . . . . . . . 17, 2629 MPSA18 . . . . . . . . . . . . . . . . 13, 2632 MPSA20 . . . . . . . . . . . . . . . . 12, 2636 MPSA27 MPSA28 MPSA29 MPSA42 MPSA43 MPSA44 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64 MPSA70 MPSA75 MPSA77 MPSA92 MPSA93 MPSH10 MPSH11 MPSH17 MPSH81 . . . . . . . . . . . . . . . . 14, 2642 . . . . . . . . . . . . . . . . . . . . . 2645 . . . . . . . . . . . . . . . . 14, 2645 . . . . . . . . . . . . . . . . 15, 2648 . . . . . . . . . . . . . . . . . . . . . 2648 . . . . . . . . . . . . . . . . 15, 2651 . . . . . . . . . . . . . . . . 12, 2619 . . . . . . . . . . . . . . . . 12, 2619 . . . . . . . . . . . . . . . . . . . . . 2655 . . . . . . . . . . . . . . . . 14, 2655 . . . . . . . . . . . . . . . . 14, 2655 . . . . . . . . . . . . . . . . 12, 2658 . . . . . . . . . . . . . . . . 14, 2664 . . . . . . . . . . . . . . . . 14, 2664 . . . . . . . . . . . . . . . . 15, 2666 . . . . . . . . . . . . . . . . . . . . . 2666 . . . . . . . . . . . . . . . . 16, 2669 . . . . . . . . . . . . . . . . 16, 2669 . . . . . . . . . . . . . . . . 16, 2671 . . . . . . . . . . . . . . . . 16, 2673
MUN2215T1 . . . . . . . . . . . . MUN2216T1 . . . . . . . . . . . . MUN2230T1 . . . . . . . . . . . . MUN2231T1 . . . . . . . . . . . . MUN2232T1 . . . . . . . . . . . . MUN2233T1 . . . . . . . . . . . . MUN2234T1 . . . . . . . . . . . . MUN5111DW1T1 . . . . . . . . MUN5111T1 . . . . . . . . . . . . MUN5112DW1T1 . . . . . . . . MUN5112T1 . . . . . . . . . . . . MUN5113DW1T1 . . . . . . . . MUN5113T1 . . . . . . . . . . . . MUN5114DW1T1 . . . . . . . . MUN5114T1 . . . . . . . . . . . . MUN5115DW1T1 . . . . . . . . MUN5115T1 . . . . . . . . . . . . MUN5116DW1T1 . . . . . . . . MUN5116T1 . . . . . . . . . . . . MUN5130DW1T1 . . . . . . . MUN5130T1 . . . . . . . . . . . . MUN5131DW1T1 . . . . . . . MUN5131T1 . . . . . . . . . . . . MUN5132DW1T1 . . . . . . . MUN5132T1 . . . . . . . . . . . . MUN5133DW1T1 . . . . . . . MUN5133T1 . . . . . . . . . . . . MUN5134DW1T1 . . . . . . . MUN5134T1 . . . . . . . . . . . . MUN5135DW1T1 . . . . . . .
MUN5331DW1T1 . . . . . . . 113, 2777 MUN5332DW1T1 . . . . . . . 113, 2777 MUN5333DW1T1 . . . . . . . 113, 2777 MUN5334DW1T1 . . . . . . . 113, 2777 MUN5335DW1T1 . . . . . . . . . . . . . 2777 MV104 . . . . . . . . . . . . 123, 125, 5155 MV209 . . . . . . . . . . . . . 126, 128, 591 MV409 . . . . . . . . . . . . 127, 128, 5127 MV1403 . . . . . . . . . . . 127, 128, 5157 MV1404 . . . . . . . . . . . 127, 128, 5157 MV1405 MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 MV2101 MV2104 . . . . . . . . . . . 127, 128, 5157 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . 123, 124, 5159 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . 123, 124, 5159 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . 123, 124, 5159 . . . . . . . . . . . 123, 124, 5135 . . . . . . . . . . . . . . . . 124, 5135
MPSL01 . . . . . . . . . . . . . . . . . . . . . 2676 MPSL51 . . . . . . . . . . . . . . . . . . . . . 2680 MPSW01 . . . . . . . . . . . . . . . . . . . . . 2684 MPSW01A . . . . . . . . . . . . . . 14, 2684 MPSW05 . . . . . . . . . . . . . . . . . . . . . 2687 MPSW06 . . . . . . . . . . . . . . . . 13, 2687 MPSW10 . . . . . . . . . . . . . . . . . . . . . 2690 MPSW13 . . . . . . . . . . . . . . . . . . . . . 2693 MPSW14 . . . . . . . . . . . . . . . . . . . . . 2693 MPSW42 . . . . . . . . . . . . . . . . 15, 2696 MPSW45 . . . . . . . . . . . . . . . . . . . . . 2699 MPSW45A . . . . . . . . . . . . . . 14, 2699 MPSW51 . . . . . . . . . . . . . . . . . . . . . 2704 MPSW51A . . . . . . . . . . . . . . 14, 2704 MPSW55 . . . . . . . . . . . . . . . . . . . . . 2707 MPSW56 . . . . . . . . . . . . . . . . 13, 2707 MPSW63 . . . . . . . . . . . . . . . . . . . . . 2710 MPSW64 . . . . . . . . . . . . . . . . 14, 2710 MPSW92 . . . . . . . . . . . . . . . . 15, 2713 MSA1022CT1 . . . . . . . . . 114, 2716
MV2105 . . . . . . . . . . . 123, 124, 5135 MV2108 . . . . . . . . . . . . . . . . 124, 5135 MV2109 . . . . . . . . . . . 123, 124, 5135 MV2111 . . . . . . . . . . . . . . . . 124, 5135 MV2115 . . . . . . . . . . . 123, 124, 5135 MV7005T1 . . . . . . . . 127, 128, 5160 MV7404T1 . . . . . . . . 127, 128, 5162 P2N2222A . . . . . . . . . . . . . . 17, 2789 P2N2907A . . . . . . . . . . . . . . 17, 2794 PZT651T1 . . . . . . . . . . . . . . 117, 2798
Alphanumeric Index
Device
PZT751T1 . . . . . . . . . . . . . . PZT2222AT1 . . . . . . . . . . . PZT2907AT1 . . . . . . . . . . . PZTA14T1 . . . . . . . . . . . . . . PZTA42T1 . . . . . . . . . . . . . . PZTA64T1 . . . . . . . . . . . . . . PZTA92T1 . . . . . . . . . . . . . .
Page
117, 2800 117, 2802 117, 2805 117, 2808 117, 2811 117, 2813 117, 2816
Device
Page
Device
Page
PZTA96T1 . . . . . . . . . . . . . . 117, 2817 VN10LM . . . . . . . . . . . . . . . 120, 4101 VN0300L . . . . . . . . . . . . . . . . 120, 496 VN0610LL . . . . . . . . . . . . . . . 120, 498 VN2222LL . . . . . . . . . . . . . . 120, 4103 VN2406L . . . . . . . . . . . . . . . 120, 4106 VN2410L . . . . . . . . . . . . . . . 120, 4108
1 2 3 4 5 6 7 8 9 10 11
Selector Guide Plastic-Encapsulated Transistors GreenLine Portfolio Devices Small-Signal Field-Effect Transistors and MOSFETs Small-Signal Tuning and Switching Diodes Tape and Reel Specifications and Packaging Specifications Surface Mount Information Package Outline Dimensions Reliability and Quality Assurance Replacement Devices Alphanumeric Index

Small Signal - Transistors, Fets and Diodes Device Databook

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Small Signal - Transistors, Fets and Diodes Device Databook

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Selector Guide Plastic-Encapsulated Transistors GreenLine Portfolio Devices Small-Signal Field-Effect Transistors and MOSFETs Small-Signal Tuning and

Motorola Small-Signal Transistors, FETs and Diodes Device Data

Motorola Small-Signal Transistors, FETs and Diodes Device Data

SMALLSIGNAL TRANSISTORS, FETs AND DIODES

Motorola SmallSignal Transistors, FETs and Diodes Device Data

About This Revision

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola Device Classifications

Motorola SmallSignal Transistors, FETs and Diodes Device Data

SmallSignal Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . 51

Tape and Reel Specifications and Packaging Specifications . . . . . . . . . . . . 61

Surface Mount Information . . . . . . . . . 71

Package Outline Dimensions . . . . . . . 81

Reliability and Quality Assurance . . . 91

SmallSignal FieldEffect Transistors and MOSFETs . . . . . . . . . . . . 41

Replacement Devices . . . . . . . . . . . . . 101 Alphanumeric Index . . . . . . . . . . . . . . . 111

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola SmallSignal Transistors, FETs and Diodes Device Data

CASE 2904 TO226AA (TO92)

Case 2904 TO226AA (TO92)

10 10 10 10 10 10 10 10 6.0 5.0 10 10 10 10 6.0 4.0

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

2N5087 BC560C MPS3906 MPS4250 BC559B BC559C MPS6523

800 650 800 450 800 300 450 800 600

7.0(7) 9.5 6.5(1)

40(2) 100(2) 280 250 250 160 200(2) 250 250 50 50

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

Case 2905 TO226AE (1WATT TO92)

Case 2904 TO226AA (TO92)

BC490 BC640 MPS751 MPS750 BC369

1000 500 2000 2000 1000

100 150 1000 1000 1000

0.3/0.5 0.5 0.5 0.5 0.5

1000 500 2000 2000 1000

100 50 200 200 100

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2905 TO226AE (1WATT TO92) NPN

Case 2905 TO226AE (1WATT TO92) PNP

Case 2904 TO226AA (TO92) NPN

Case 2904 TO226AA (TO92) PNP

Case 2904 TO226AA (TO92)

NPN BF420 BF422

PNP BF421 BF423

Devices listed in bold, italic are Motorola preferred devices.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

PlasticEncapsulated Transistors (continued)

Case 2904 TO226AA (TO92) NPN

Case 2904 TO266AA (TO92) PNP

Table 7. PlasticEncapsulated HighSpeed Saturated Switching Transistors

Case 2904 TO226AA (TO92) NPN

0.22 0.2 0.2

1.0 3.0 1.0

Devices listed in bold, italic are Motorola preferred devices.