22nm 3D Tri-Gate Transistors: Faster, Cooler, Smaller

ABSTRACT
Intel introduces a fundamentally different technology for future microprocessor families: 3-D transistors manufactured at 22nm. These new transistors enable Intel to continue to relentlessly pursue Moore's Law and to ensure that the pace of technology advancement consumers expect can continue for years to come. "The 22nm 3-D Tri-Gate transistors provide up to 37% performance increase at low voltage versus Intel's 32nm planar transistors. This incredible gain means that they are ideal for use in small handheld devices, which operate using less energy to "switch" back and forth. Alternatively, the new transistors consume less than half the power when at the same performance as 2D planar transistors on 32nm chips." . The device is designed with the aim of decoupling the need for aggressive scaling of the gate oxide thickness when reducing the channel length. Other scaling objectives are: retaining low doping in the channel, maintaining the drain conductance and optimizing the low power/low voltage device behaviour. oxide thickness and channel doping have a reduced influence on the threshold voltage and do not need to be scaled aggressively to reduce the short channel effects. Finally, we show that the device performance for low-power/low-voltage applications is excellent

NAME : ANIMESH KUMAR SINGH ROLL : 03 REDG. NO : 0801215004 SEM : 7TH BRANCH : ETC