BANDGAP NARROWING MODELS

1. 2. 3. 4.

Slotboom model Del Alamo model Jain-Roulston model Wilson model

BAND GAP NARROWING

It is observed experimentally that a shrinkage of the band gap occurs when the impurity concentration is particularly high. This effect is called the band gap narrowing effect which is ascribed to the emerging

of the impurity band formed by the overlapped impurity states. In devices

containing adjacent layers or regions with different doping concentrations, dopinginduced shifting of the conduction band minimum and the valence band maximum may greatly influence the device behavior. This is because the shifts in the band edges represent a potential barrier which influences the carrier transport across the junctions

1. SLOTBOOM
Keyword --- Slotboom or OldSlotboom Syntaurus device reads as --

2. DEL ALAMO MODEL

Keyword --- delAlamo Syntaurus device reads as --

3. JAIN ROULSTON MODEL

Keyword --- JainRoulston Is implementsed as --

WHERE,

Effective bohr radius

No. of valleys in valence or conduction band

Reydberg energy

Reydberg energy For minority carrie

4. BENNET-WILSON
Keyword --- BennetWilson Syntaurus device reads as --

Thank you