S9012

PNP Silicon
Transistors
TO-92
Feat ur es
TO-92 Plastic-Encapsulate Transistors
Capable of 0.625Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.5A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking Code: S9012
El ect r i cal Char act er i st i cs @ 25
O
C Unl ess Ot her wi se Speci fi ed
Symbol Parameter Min Max Units
OFF CHARACTERI STI CS
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
40 --- Vdc
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
25 --- Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
5.0 --- Vdc
I
CBO
Collector Cutoff Current
(V
CB
=40Vdc, I
E
=0)
--- 0.1 uAdc
ICEO Collector Cutoff Current
(V
CE
=20Vdc, I
B
=0)
--- 0.2 uAdc
IEBO Emitter Cutoff Current
(V
EB
=5.0Vdc, I
C
=0)
--- 0.1 uAdc
ON CHARACTERI STI CS
h
FE(1)
DC Current Gain
(IC=50mAdc, VCE=1.0Vdc)
64 300 ---
h
FE(2)
DC Current Gain
(I
C
=500mAdc, V
CE
=1.0Vdc)
40 --- ---
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
--- 0.6 Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=500mAdc, I
B
=50mAdc)
--- 1.2 Vdc
VEB Base- Emitter Voltage
(I
E
=100mAdc)
--- 1.4 Vdc
SMALL-SI GNAL CHARACTERI STI CS
f
T
Transistor Frequency
(IC=20mAdc, VCE=6.0Vdc, f=30MHz)
150 --- MHz
CLASSI FI CATI ON OF HFE( 1)
Rank G H I
Range 120 -166 144 -220 190 -300
E
B
C
A E
B
C
D
G
Pin Configuration
w w w.mc c semi .c om
Revi si on: 3 2004/07/26
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
M C C
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G .010 .104 2.44 2.64
TM


Micro Commercial Components