KL University, Guntur III Semester 2011-2012 HOME ASSIGNMENT Course code & Title: ECC 202 & Branch:

ECE, ECM,EEE Electronic Devices & Circuits (EDC) Name of the Course coordinator: M.Siva Ganga Prasad Date of Exam: Max. Marks : Duration :

1. Given an NPN Transistor for which dc = 0.98, Ico = 2mA. A common emitter connection is used and vcc = 12V, RL = 4 k. What is the minimum base current required in order that the transistor enter its saturation region (see fig).

Fig for problem 1. 2. The reverse saturation current of the Germanium transistor shown in the fig below is 2 A at room temperature of (250C) and increases by a factor of 2 for each temperature increase of 100C. The bias VBB = 5V. Find the maximum allowable value of RB if the transistor is to remain cut-off at a temperature of 750C.

Fig for problem 2.

3. Derive the expression for stability factor S, SI, SII in fixed bias Bipolar junction transistor. 4. An NPN transistor with = 50, is used in common Emitter circuit with VCE = 10V and RC = 2K. The bias is obtained by connecting a 100 K resistance from collector to base. Assume VBE is zero. Find a) Quiescent point. b) Stability factor S.

Fig for problem 4. 5. A transistor with = 100 is to be used in CE configuration with collector to base bias. RC = 1K, VCC = 10V. Assume VBE = 0. Choose RB so that quiescent collector to emitter voltage is 4V. Find stability factor S. 6. In a fixed bias circuit a Silicon transistor with =100 is used. VCC = 6v, RC = 3K, RB = 530 k. Draw the DC load line and determine the operating point. What is the stability factor?

Fig for problem. 6.