VISHAY

MCT2/ MCT2E
Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features
Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry Standard Dual-in line 6-pin package 5300 VRMS isolation test voltage

A C NC

1 2 3

6 B 5 C 4 E

Agency Approvals
UL - File No. E52744 System Code H or J DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 CSA 93751 BSI IEC60950 IEC60965

i179004

Applications
AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection

DIN EN 60747-5-5 pending partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commercial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Footnotes
Designing with data sheet is covered in Application Note 45.

Description
Standard Single Channel Phototransistor Couplers. The MCT2/ MCTE family is an Industry Standard Single Channel Phototransistor . Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Compliance to DIN EN 60747-5-2(VDE0884)/

Order Information
Part MCT2 MCT2E MCT2-X009 Remarks CTR 60 (> 20) %, DIP-6 CTR 60 (> 20) %, DIP-6 CTR 60 (> 20) %, SMD-6 (option 9)

For additional information on the available options refer to Option Information.

Document Number 83731 Rev. 1.3, 19-Apr-04

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MCT2/ MCT2E
Vishay Semiconductors Absolute Maximum Ratings

VISHAY

Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Reverse voltage Forward current Surge current Power dissipation t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 Unit V mA A mW

Output
Parameter Collector-emitter breakdown Emitter-base breakdown voltage Collector current t < 1.0 ms Power dissipation Test condition Symbol VCEO BVEBO IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW

Coupler
Parameter Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE0303,part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature Operating temperature Junction temperature Soldering temperature max. 10 s dip soldering: distance to seating plane 1.5 mm RIO RIO Tstg Tstg Tj Tsld Test condition Symbol VISO Value 5300 7.0 7.0 0.4 175 1012 10
11

Unit VRMS mm mm mm

C C C C

- 55 to + 150 - 55 to + 100 100 260

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Document Number 83731 Rev. 1.3, 19-Apr-04

VISHAY
Electrical Characteristics

MCT2/ MCT2E
Vishay Semiconductors

Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Forward voltage Reverse current Capacitance Test condition IF = 20 mA VR = 3.0 V VR = 0, f = 1.0 MHz Symbol VF IR CO 25 Min Typ. 1.1 Max 1.5 10 Unit V A pF

Output
Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-base breakdown voltage Collector-emitter leakage current Collector-base leakage current Collector-emitter capacitance Test condition IC = 1.0 mA, IF = 0 mA IE = 100 A, IF = 0 mA IC = 10 A, IF = 0 mA VCE = 10 V, IF = 0 mA VCE = 10 V, IF = 0 mA VCE = 0 Symbol BVCEO BVECO BVCBO ICEO ICBO CCE 10 Min 30 7.0 70 5.0 50 20 Typ. Max Unit V V V nA nA pF

Coupler
Parameter Resistance, input to output Capacitance (input-output) Test condition Symbol RIO CIO Min Typ. 100 0.5 Max Unit G pF

Current Transfer Ratio

Parameter DC Current Transfer Ratio Test condition VCE = 10 V, IF = 10 mA Symbol CTRDC Min 20 Typ. 60 Max Unit %

Document Number 83731 Rev. 1.3, 19-Apr-04

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MCT2/ MCT2E
Vishay Semiconductors Switching Characteristics
Parameter Switching time Test condition IC = 2 mA, RL = 100 , VCE = 10 V Symbol ton, toff Min Typ. 10 Max

VISHAY

Unit s

Typical Characteristics (Tamb = 25 C unless otherwise specified)

1.4
VF - Forward Voltage - V

1.5 TA = 55C TA = 25C

NCTR - Normalized CTR

1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1

i4n25_01

Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V

1.0
TA=50C

0.5
NCTR(SAT) NCTR

TA = 85C

0.0 1 10 IF - Forward Current - mA 100

i4n25_03

.1

1 10 IF- LED Current - mA

100

Fig. 1 Forward Voltage vs. Forward Current

Fig. 3 Normalized Non-saturated and Saturated CTR vs. LED Current

1.5
NCTR - Normlized CTR NCTR - Normalized CTR
Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V

1.5

Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce=0.4 V

1.0
TA=25C

1.0
TA=70C

0.5
NCTR(SAT) NCTR

0.5
NCTR(SAT) NCTR

0.0 0
i4n25_02

0.0 .1 100
i4n25_04

1 10 IF - LED Current - mA

1 10 IF - LED Current - mA

100

Fig. 2 Normalized Non-Saturated and Saturated CTR vs. LED Current

Fig. 4 Normalized Non-saturated and saturated CTR vs. LED Current

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Document Number 83731 Rev. 1.3, 19-Apr-04

VISHAY

MCT2/ MCT2E
Vishay Semiconductors

1.5
NCTR - Normalized CTR

NCTRcb - Normalized CTRcb

Normalized to: Vce=10 V, IF=10 mA, TA=25C CTRce(sat) Vce = 0.4 V

1.5
Normalized to: Vcb=9.3 V, IF=10 mA, TA=25C

1.0
TA=85C

1.0

0.5
NCTR(SAT) NCTR

0.5 25C 50C 70C 0.0 .1 1 10 100

0.0 .1 1 10 IF - LED Current - mA 100

IF - LED Current - mA
i4n25_08

i4n25_05

Fig. 5 Normalized Non-saturated and saturated CTR vs. LED Current

Fig. 8 Normalized CTRcb vs. LED Current and Temp.

35
Ice - Collector Current - mA

10
Normalized to: IF=10 mA, TA=25C

30 25 20 15 10 5 0 0 10 20 30 40 50 60 IF - LED Current - mA 70C 25C 85C 50C

Normalized Photocurrent

1 0.
Nib, TA=20C Nib, TA= 25C Nib, TA= 50C Nib, TA= 70C

0.01 .1
i4n25_09

10

100

i4n25_06

IF - LED Current - mA

Fig. 6 Collector-Emitter Current vs. Temperature and LED Current

Fig. 9 Normalized Photocurrent vs. IF and Temp.

10
Iceo - Collector-Emitter - nA

5 4

1.2
NHFE - Normalized HFE

70C

10 10

1.0 20C 0.8

25C

10 2 10 10
1 0

Vce = 10 V Typical

0.6

Normalized to: Ib=20 A, Vce=10 V, TA=25C

10 1 10 2 20 0 20 40 60 80 100

0.4
i4n25_10

TA - Ambient Temperature - C
i4n25_07

10 100 Ib - Base Current - A

1000

Fig. 7 Collector-Emitter Leakage Current vs.Temp.

Fig. 10 Normalized Non-saturated HFE vs. Base Current and Temperature

Document Number 83731 Rev. 1.3, 19-Apr-04

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MCT2/ MCT2E
Vishay Semiconductors

VISHAY

NHFE(sat) - Normalized Saturated HFE

1.5 Normalized to: Vce=10 V, Ib=20 A T A =25C

F=10 KHz, DF=50% VCC = 5.0 V RL VO IF=1 0 mA

70C 1.0 25C 20C 0.5

50C

Vce=0.4 V 0.0 1 10 100 1000

i4n25_14

i4n25_11

Ib - Base Current - A

Fig. 11 Normalized HFE vs. Base Current and Temp.

Fig. 14 Switching Schematic

1000
tPLH - Propagation Delay - s

2.5
tPHL - Propagation Delay - s

IF =10 mA,TA=25C VCC =5.0 V, Vth=1.5 V 100 tPHL 2.0

10 tPLH

1.5

1 .1
i4n25_12

1.0 1 10 100

RL - Collector Load Resistor - k

Fig. 12 Propagation Delay vs. Collector Load Resistor

IF

VO

tD

tR

tPLH VTH=1.5 V

tPHL

tS

tF

i4n25_13

Fig. 13 Switching Timing

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Document Number 83731 Rev. 1.3, 19-Apr-04

VISHAY
Package Dimensions in Inches (mm)
pin one ID

MCT2/ MCT2E
Vishay Semiconductors

3 .248 (6.30) .256 (6.50) 4

ISO Method A

.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55)
i178004

.048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81)

.300 (7.62) typ.

18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 39 .010 (.25) typ. .300.347 (7.628.81)

.114 (2.90) .130 (3.0)

Package Dimensions in Inches (mm)

SMD
.343 (8.71) .335 (8.51) Pin one I.D.

.030 (.76)

.256 (6.50) .248 (6.30)

.100 (2.54)

R .010 (.25) .070 (1.78) .315 (8.00) min .435 (11.05) .060 (1.52)

.050 (1.27) typ.

ISO Method A

.039 (0.99) min.

.052 (1.33) .048 (1.22) .150 (3.81) .130 (3.30) .0098 (.25) .0040 (.10) .040 (1.016) .020 (0.508)

.395 (10.03) .375 (9.63) .300 (7.62) typ.

3 to 7

18 .012 (0.31) .008 (0.20)

4 .100 (2.54)
i178002

.315 (8.00) min.

Document Number 83731 Rev. 1.3, 19-Apr-04

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MCT2/ MCT2E
Vishay Semiconductors

VISHAY

Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.

.0040 (.102) .0098 (.249)

.020 (.51) .040 (1.02)

.012 (.30) typ.

.315 (8.00) min.

15 max.
18449

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Document Number 83731 Rev. 1.3, 19-Apr-04

VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to

MCT2/ MCT2E
Vishay Semiconductors

1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83731 Rev. 1.3, 19-Apr-04

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