MOSFET Problems

1) The illustrative N-channel enhancement MOSFET model described before is biased as shown in the accompanying figure. Use the level 1 model to determine the drain voltage analytically, and compare this calculation with a PSpice analysis. PSpice computation gives: ID = 0.954 ma VGS = 3.92 volt VDS = 8.28 volt voltage divider gives gate bias as 3.92 volt. ID 1E-4*(4-1)*(4-1) = 0.9 ma VDS 12 - 0.9*3.9 = 8.49 volt Note: An approximate channel length modulation correction would increase the current by about 1E-4 *0.01*8.49 = 8 amp and lower the drain voltage by about 0.33 volt 2) The illustrative N-channel enhancement MOSFET model described before is biased as shown in the accompanying figure. Use the level 1 model to determine the drain voltage analytically, and compare this calculation with a PSpice analysis.PSpice gives VDS = VGS = 5.057 volts ID = 1.78 ma Analytically ID = (VDD - VDS)/RD ID = K(VGS-VT)(VGS-VT) VGS = VDS Solve for VDS = 5.18 volts 3) The illustrative N-channel enhancement MOSFET model described before is biased as shown in the accompanying figure. Use the level 1 model to determine the drain voltage analytically, and compare this calculation with a PSpice analysis PSpice gives VDS = 2VGS = 7.97 volts ID = 0.993 ma Analytically ID = (VDD - VDS)/RD ID = K(VGS-VT)(VGs-VT) 2VGS = VDS Solve for VDS = 8.22 volts ID = 0.968 ma

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4) The illustrative P-channel enhancement MOSFET model described before is biased as shown in the accompanying figure. Use the level 1 model to determine the drain voltage analytically, and compare this calculation with a PSpice analysis

PSpice gives VD = 3.7 volts ID = 0.954 ma Analytically VGS = 12(33/(33+68) = 3.92volts

ID = K(VGS-VT)(VGS-VT) Solve for VD = 3.33 volts ID = 0.85 ma Note: Including the channel length modulation effect raises the estimated current to 0.91 ma.

5) Compute the transfer characteristic Vout/Vin for the amplifier shown. Note (on the characteristic) where cutoff occurs. Recall that saturation requires Vin VDS + VT and note where operation changes from saturation into the voltagecontrolled-resistance region. MOS Prob #5 VIN 1 0 DC 0 RIN 1 2 100K MNE 3 2 00 MHMN RD 4 3 3.9K VDD 4 0 DC 12 .model mhmN nmos vto=1 l=10u w = 20u +kp=1e-4 gamma=0.5 phi=0.7 lambda=.01 +rd=10 rs=10 rsh=10 cbd=5p cbs=1p +mj=.5 mjsw=.25 pb=.6 is=1e-16 +cgdo=4e-11 cgso=4e-11 cgbo=2e-10 +tox=0.1u ld=0.2u .DC VIN 0 12 .1 .PROBE .OP .END

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Note that the idealized transfer characteristic 'starts' when VIN = 1 volt; before that the MOSFET is cutoff and the drain voltage is 12 volts. The MOSFET is not in saturated operation when VIN VD +1, i.e., the gate-drain voltage exceeds the threshold voltage VT. The drain current then becomes roughly constant because although increasing VIN tended to increase the current the increased current lowers the drain source voltage which in the VCR tends to reduce the current 6) The high incremental resistance of a saturated N-channel depletion-type MOSFET is used as a drain load, replacing the resistor in the preceding circuit. Note that this device is ON with VGS = 0. Compute the transfer characteristic Vout/Vin for the amplifier shown. Note (on the characteristic) where cutoff occurs. Recall that saturation requires Vin VDS + VT and note where operation changes from saturation into the voltage-controlled-resistance region. *nmos enhancement .model mhmN nmos vto=1 l=10u w = 20u +kp=1e-4 gamma=0.5 phi=0.7 lambda=.01 +rd=10 rs=10 rsh=10 cbd=5p cbs=1p +mj=.5 mjsw=.25 pb=.6 is=1e-16 +cgdo=4e-11 cgso=4e-11 cgbo=2e-10 +tox=0.1u ld=0.2u *nmos depletion .model ND nmos vto=-5 l=10u w = 40u +kp=1e-4 gamma=0.5 phi=0.7 lambda=.01 +rd=10 rs=10 rsh=10 cbd=5p cbs=1p +mj=.5 mjsw=.25 pb=.6 is=1e-16 +cgdo=4e-11 cgso=4e-11 cgbo=2e-10 +tox=0.1u ld=0.2u 0 2 2 3 0 DC 00 33 DC 0 100K mhmN ND 12 .DC VIN 0 12 .1 .PROBE .OP .END

Depletion load VIN RIN MNE MND VDD 1 1 3 4 4

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Assume the depletion load operates in the VCR region and the enhancement device is saturated. Then ID = 0.1(VIN - 1)2 (enhancement) ID = 0.2[(12-V(3)) - (12-V(3))2] (depletion load) Equate and solve for V(3) = 7 SQRT( 25 - (VIN-1)2/2); this is plotted on PROBE drawings. (Note: Use '-' sign for the physically meaningful solution.) Eventually the load saturates and the drain current is essentially fixed at 0.2(-5)2=5ma; this estimate neglects the channel length modulation effect. Concomitantly the driver operates in the VCR region; i.e., 5 = .1{2(VIN-1)V(3) - V(3)2] Solve for V(3) = VIN-1 SQRT((VIN-1)2 -50) and plot on PROBE data above.. Note: Use the '-' sign for the physically meaningful solution. The drain current is plotted below, along with the estimated currents.

7) A Complementary MOS amplifier uses a Pchannel enhancement load for an N-channel enhancement amplifier, as shown. Plot the load line on the N-channel drain characteristics (compute the load line and transfer the data) and determine the ID vs Vin transfer characteristic. Compare this with the computed characteristic. Note that the load always operated in saturation since VDS = VGS.

Enhancement load VIN RIN MNE MPE VDD 1 1 3 4 4 0 2 2 2 0 DC 00 34 DC 0 100K mhmN PE 12

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*nmos enhancement .model mhmN nmos vto=1 l=10u w = 20u +kp=1e-4 gamma=0.5 phi=0.7 lambda=.01 +rd=10 rs=10 rsh=10 cbd=5p cbs=1p +mj=.5 mjsw=.25 pb=.6 is=1e-16 +cgdo=4e-11 cgso=4e-11 cgbo=2e-10 +tox=0.1u ld=0.2u

*pmos enhancement .model PE pmos vto=-1 l=10u w = 20u +kp=1e-4 gamma=0.5 phi=0.7 lambda=.01 +rd=10 rs=10 rsh=10 cbd=5p cbs=1p +mj=.5 mjsw=.25 pb=.6 is=1e-16 +cgdo=4e-11 cgso=4e-11 cgbo=2e-10 +tox=0.1u ld=0.2u .DC VIN 0 12 .1 .PROBE .OP .END

Initially (VIN < 1v) MNE is cutoff; the channel is not formed. As the voltage increases above VT MNE starts VCR operation, while MPE is saturated. As VIN increases MNE saturates, and after a further increase MPE begins VCR operation. When both devices are saturated ID = 0.1(VIN-1)2 = 0.1(VIN-12+1)2. From this equality determine VIN = 6 when both devices are saturated.

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