This document contains measurements of voltages and current for a transistor circuit under varying conditions. Voltages were applied between drain-source (Vdd), gate-source (Vab), and gate-drain (Vbc) from 0 to 5 volts in 0.5 volt increments. The corresponding drain current (Idd) was also measured at each voltage combination.
This document contains measurements of voltages and current for a transistor circuit under varying conditions. Voltages were applied between drain-source (Vdd), gate-source (Vab), and gate-drain (Vbc) from 0 to 5 volts in 0.5 volt increments. The corresponding drain current (Idd) was also measured at each voltage combination.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as XLSX, PDF, TXT or read online from Scribd
This document contains measurements of voltages and current for a transistor circuit under varying conditions. Voltages were applied between drain-source (Vdd), gate-source (Vab), and gate-drain (Vbc) from 0 to 5 volts in 0.5 volt increments. The corresponding drain current (Idd) was also measured at each voltage combination.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as XLSX, PDF, TXT or read online from Scribd