Aim: To plot the transfer and drain characteristics of FET in common source configuration.

Apparatus: DC sources, voltmeter, micro ammeter, mille ammeter, resistor, connecting

wires, FET BFW 11.

Formula:

Theory:
JFET is a three-terminal device with one terminal capable of controlling the current
between the other two.

The basic construction of the n-channel JFET is shown in fig. Note that the major part
of the structure is the n-type material that forms the channel between the embedded layers of
p-type material. The top of the n-type channel is connected through an ohmic contact to a
terminal referred to as the drain (D), while the lower end of the same material is connected
through an ohmic contact to a terminal referred to as the source (S). The two p-type materials
are connected together and to the gate (G) terminal.

Positive voltage VDS has been applied across the channel and the gate has been
connected directly to the source to establish the condition VGS = 0 V. The result is a gate and
source terminal at the same potential and a depletion region in the low end of each p-material
similar to the distribution of the no-bias conditions. The instant the voltage VDD is applied,
the electrons will be drawn to the drain terminal, establishing the conventional current ID. As
VDS is increased beyond VP, the region of close encounter between the two depletion regions
will increase in length along the channel, but the level of ID remains essentially the same.
This current is called as IDSS. In essence, therefore, once VDS > VP the JFET has the
characteristics of a current source.

The voltage from gate to source, denoted VGS, is the controlling voltage of the JFET.
Just as various curves for IC versus VCE were established for different levels of IB for the BJT
transistor, curves of ID versus VDS for various levels of VGS can be developed for the JFET.

Procedure:
1. Connect the circuit components as shown in the circuit diagram.
2. Adjust VDD to obtain VDS of 2v
3. Vary VGG to get different values of VGS & ID.
4. Note down the readings and plot the graph.
5. Repeat above steps for VDS of 5v.
6. For drain characteristics adjust VGS to -0.5v.
7. Vary VDD to get different values of VDS & ID.
8. Note down the readings and plot the graph.
9. Repeat above steps for VGS of -1v.

Conclusion:
The transfer and drain characteristics of JFET was hence plotted.
Circuit diagram:

Observation Table:
Transfer Characteristics:
VDS = 5.68 v VDS = 15 v
VGS ID VGS ID
0 2.41 0 5.80
0.1 2.40 0.1 5.48
0.2 2.38 0.2 5.08
0.3 2.36 0.4 4.2
0.4 2.34 0.6 3.38
0.5 2.31 0.8 2.65
0.6 2.27 1.0 1.91
0.7 2.21 1.2 1.33
0.8 2.23 1.4 0.79
0.9 1.97 1.6 0.34
1.0 1.69 1.8 0.08
1.2 1.14 2.0 0.00
1.4 0.66
1.6 0.3
1.8 0.05
2.0 0.00
Drain Characteristics:
VGS = 0v VGS = -0.5v VGS = -1
VDS ID VDS ID VDS ID
0.5 2.50 0.5 1.74 0.5 1.06
1 4.14 1 2.84 1 1.49
1.5 5.12 1.5 3.27 1.5 1.6
2 5.67 2 3.48 2 1.68
2.5 5.89 2.5 3.57 2.5 1.71
3 6.00 3 3.62 3 1.74
3.5 6.05 3.5 3.66 3.5 1.76
4 6.08 4 3.68 4 1.78
4.5 6.1 4.5 3.69 4.5 1.79
5 6.1 5 3.69 5 1.8

Graphs

Transfer Characteristics Drain Characteristics