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Semiconductor Physics

Semiconductor Physics I
Chap. 1 Introduction
1. Literature 2. semiconductor properties 3. basic parameters

Chap. 5 Impurity States


1. Exp. observation 2. eff. Mass / deeps levels

Chap. 2 Crystal Structure


1. real lattice 2. Reciprocal lattice 3. Brillouin zone

Chap. 6 Statistics
1. equilibrium TD 2. Distribution functions

Chap. 7 Non-equilibrium
1. Field effect 2. Currents 3. Recombination/relaxation

Chap. 3 Band structure Calculations


1. Symmetries 2. Kronig-Penny 3. Brillouin/Bloch Approx. 4. LCAO/APW/OPW/Pseudo pot. 5. kp-method

Chap. 8 Transport
1. Boltzmann equation 2. Scattering mechanisms/mobility 3. ..

Chap. 4 Experimental determination band structure


1. Methods 2. Results

Chap. 9 Opt. Properties Semiconductors


1. Opt. transition/ Dirac perturbation 2. Absorption/Emission 3. Exciton, impurity-band transition

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Semiconductor Physics
Semiconductor Physics II
Chap. 10 Device technology
1. Crystal growth 2. Doping technology 3. Pattern technology (lithography, etching)

Chap. 12 Unipolar technology


1.1. Schottky diode 2.1. Field effect transistor (FET) 2.2. JFET 2.3. MOSFET 2.4. Si-MOSFET 3.1. Switching speed and power 3.2. Noise in semiconductors

Chap. 11 Bipolar technique


1.1. pn transition 1.2. Diode characteristics 1.3. Diode capacitance 1.4. Diode structures 2.1. Hetero semiconductor 2.2. Hetero/bipolar junctions 2.3. Quantum size effect / band gap engineering 3.1. Bipolar transistor 4.1. Bipolar integration

Chap. 13 Optoelectronic
1. LEDs 2. Detectors / solar cells 3. Semiconductor lasers 4. Modulators

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Semiconductor Physics I / II
SC-Phys I Wed. 15.10.2010 08.00 - 09.30 V 57.06

4.Physikalisches Institut Universitt Stuttgart

SC-Phys-I_Schweizer-2010

Heinz Schweizer Micro/Nano-Structure-Lab. (MSL) 3

Semiconductor Physics I
Chap.2 Crystal Structure
2.1. Crystal Lattice
1. 1. 2. Crystal lattice/Bravais lattice/primitive cell/Wigner-Seitz-cell/ summary Crystal symmetry/ /Point groups Crystal planes/directions/Miller indices

(05-45)

2.2

Reciprocal Lattice .
1. 2. 3. Bragg - Laue condition Reciprocal lattice Description periodicity

(46-60)

2.3

Brillouin zone
1. Construction / examples

(61-63)

2.4 2.5

Appendix 1 Diffraction methods .


Bragg scattering/ methods / X-ray sources/Laue method/Rotating crystal/Debye-Scherrer

(64-81) (82-100)

Appendix 2 Scattering amplitude


Fourier description/Reciprocal lattice / Ewald description/ Geometrical form factor/atomic form factor/Debye-Waller factor

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Semiconductor Physics I
Chap.2.1 Crystal Lattice

Outline
2.1. Crystal Lattice
1. 2. 3. Crystal lattice/Bravais lattice/primitive cell/summary Crystal symmetry/ Wigner-Seitz-cell/Point groups Crystal planes/directions/Miller indices

(1.1/06-47)
(30-29) (30-39) (40-47)

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice

SC-Phys-I_Schweizer-2010

Semiconductor Physics I
Chap.2.1.1 Crystal Lattice

Kittel, Solid State Physics

SC-Phys-I_Schweizer-2010

Semiconductor Physics I
Chap.2.1.1 Crystal Lattice

Hellwege, Festkrperphysik

SC-Phys-I_Schweizer-2010

Semiconductor Physics I
Chap.2.1.1 Crystal Lattice

(see more below).

Kittel, Solid State Physics

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice

2.1)

2.2)

And kinetic energy ?

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (primitive lattice cell)
2.3)

fills space without overlapping without leaving voids

V
c 2.4) b a

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice)
(translation invariance)

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, examples)

2.5)

(1,1,1)

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, example bcc)

2.6a) 2.6c)

2.6b)

2.7a) 2.7b) 2.7c)


(x, y, z unit vectors in X, Y, Z direction)

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, example fcc)

2.8a) 2.8b) 2.8c)

fcc

Ashcroft / Mermin, Solid State Physics

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, primitive cell)
*)conventional

b c

bcc

primitive
a

conventional
b c

fcc

primitive
*) Primitive not full symmetry of Bravais lattice Conventional cell full symmetry of Bravais lattice
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Wigner Seitz Cell )

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, exp. examples)
Crystal Lattice of different elements and their Bravais lattices
Tab:2.1

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice)
Diamond lattice

*)
Tab:2.2

*)

*) with base the diamond lattice represents a fcc lattice. Environment for any fcc point differs in orientation to nearest neighbour not a Bravais lattice
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice)
Hexagonal Bravais lattice
2.9) a1 = ax; a2 = ax + (3)1/2 ay; a3 = cz
*)

*) There are 2 possibilities to pack identical spheres close: hexagonal lattice, cubic lattice

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, exp. example)
Hexagonal Bravais lattice (experimental)

Tab:2.3

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, general overview)
2D and 3D Bravais lattices
Tab:2.4 and 10 point groups 17 space groups
(Madelung I, p.62)

Tab:2.5

and 32 point groups 230 space groups


(Madelung I, p.62)

unit cells P = primitive C = non primitive base centred I = body centred F = face centred

14
22

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (3D Bravais lattice)
*) P I

*) each cryst. system could be (P,F,I,C) 7x4=28 but only 14 BL are possible
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (3D Bravais lattice )

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Summary)
Tab. 2.6: Summary lattice structures of semiconductors
Diamond lattice all group IV elemental SC Si, Ge, -Sn nearly all III-V and II-VI compound SC: GaAs, GaP, InAs, InSb, SiC (IV/IV some III/V and II/VI compound SC CdSe, CdS II/IV/V and I/III/VI compound SC CdSnAs2, CuInSe2 all IV/VI-compound SC and some II/VI compound SC PbS, PbSe, PbTe, GeS, SnTe
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Zinkblende Lattice

Wurtzite Lattice

Chalcopyrite lattice

NaCl lattice

Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Summary)
Lattice structures of semiconductors
Tab. 2.7 Tab. 2.8 Lattice const. (AE)

Diamond lattice Si Ge -Sn C

Zinkblende GaAs GaP

Lattice const. (AE)

5.43 5.65

5.65 5.45 6.04 6.46 6.35

InAs 6.46 3.56 InSb SiC

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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Summary)
Lattice structures of semiconductors

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)

no axis

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)

2.10a)

2.10b)

r r r r r r ` r = T T = n i a i
i

2.10c)

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)

2.11a) 2.11b)

r r r r r r ` r = T T = n i a i
i

2.11c)

2.11d)

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)

2.12a)

2.12b)

r r r r r r ` r = T T = n i a i
i

2.12c)

2.13)

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
Tab. 2.9

32

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)

2.14)

d.

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)

Tab. 2.10

chemistry

crystallography

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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Symmetry and QM)
Symmetry operations result in group properties (p. 33) Representation of groups by group table and character table (example inversion group) Tab. 2.11a: Group table 1. element O D(e) D(i) 2. element D(e) D(e) D(e) D(i) D(i) D(e) 11 12 22 representations Tab. 2.11b: Character table classes (elements) D(e) 1 1 D(i) 1 -1

O = matrix multiplication: 1.element x 2.element = result

1 0 0 1 0 1 1 0

Character = trace of representation matrix


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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Symmetry and QM)
Start with Hamiltonian which is invariant with respect to symmetry operator D(g), ( g = group element ) 2.15) H ; D ( g ) = 0

2.16) H ua

= Ea u a

Ea ta fold degenerated eigen energy value

dimension : 2.17) = 1, 2.., t a


according Eq. 2.1 eigen vectors of D are also eigen vectors of H and linear combinations: ta
2.18a ) D( g ) ua = ua Da, ' ( g ) 2.18b) Da, ' ( g ) = ua ' D( g ) ua '=1 ta

trace of D : 2.18c) a ( g ) = Da, ( g ) In case of unit matrix a = ta


=1

The matrix elements of D from eigen vectors u give the representation matrices of group G(g) (see 35)
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Symmetry and QM)
H can consist of sub spaces. Total matrix <H> represents again a representation of group G (g) with elements g (see p. 35)
Representation matrix of group G ( g ) : 2.19)
u a a ' H ( g ) ub b

0 [1 ( g )] [2 ( g )] = 0 [3 ( g )]

a = 1,2,..., t a b = 1,2,..., tb

trace of representation matrices traces i : 2.20) = 1 + 2 + 3

i can be qi times represented in :


2.21) =
N class

q
i i

Nclass = number of classes (certain elements of G[g]) without proof: Nclass = N representations (Tab 2.11b)

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions

1. 2.

Crystal planes and directions Miller indices

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )

(Tab. 2.12)

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions ( )
2.22)

2.23)

2.24)

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (distance between crystal planes )
2.25a ) r p = p (cos ; cos ; cos ) distance E from coord . cent. equation for E : (Hesse form ); p = d = distance OE r r r 2.25b) (r p ) p = 0 x cos + y cos + z cos p = 0

z
oa

or

E(h,k,l) p-r p

x x y z y z + + + + 2.25c) =1 p cos p cos p cos na ma oa r normal vector p on E : (direction vector for plane E ) r p = p p and 2.25e)

na

r p p 1 1 1 p`= = ; ; p d p cos p cos p cos r ma with lattice constant a surface normal vector p`and Miller indices h, k , l : r 1 1 1 1 1 (m o; n o; n m ) = 1 (h; k ; l ) p`= 2.25 f ) ; ; y a n a m a o a a nmo 2.25d ) and r 1 p` = a from Eq.2.25 h 2.25h) p 1 1 1 1 1 2 h + k2 + l2 = + 2+ 2 = d d n2 m o a

|p`| is inverse distance OE

2.26)

OE = d (h, k , l ) =

a h2 + k 2 + l 2
41

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )

0.5

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
Tab. 2.12

z
Intercept r, p, q reciprocal 1/r, 1/p, 1/q 1/a, 0, 0 Miller h, k, l (1,0,0) (-1,0,0) (0,1,0) (0,-1,0) (0,0,1) (0,0,-1)

plane

q IV I r x VI p

II III y

I II III IV V VI

a, 0,

, ,

, 0, 0
0, 1/a, 0 0,

, a, , 0, , , a , ,0

, 0

0, 0, 1/a 0, 0, 1/

convention Miller indices: cut at -1

Cube surfaces :(100); (-100); (001); (00-1) are called {100} planes. {100} planes are symmetrically equivalent surfaces.

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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )

distance between planes and angles for given Miller indices : 2.27 a ) d hkl = a h2 + k 2 + l 2 hh'+ kk '+ll ' h 2 + k 2 + l 2 h '2 + k '2 +l '2
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2.27b) cos(hkl ; h' k ' l ' ) =

Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
Short summary crystal planes/directions/Miller indices

(see Eq. 2.25f, p. 41)

Nomenclature (1,0,0) single plane {1,0,0} equivalent planes (set of planes) [1,0,0] single direction <1,0,0 > equivalent directions (set of directions)

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Semiconductor Physics I
Chap.2.2 Reciprocal Lattice

Outline
Chap. 2.2.1 Bragg/Laue condition Chap. 2.2.2 Description of periodicity Chap. 2.2.3 Reciprocal lattice

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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( Bragg condition ) Measurement (characterization) of Crystal structure
Lattice constants are small lattice atom arrays can be understood as mirror for photons lattice ~ AE range probe with light

Scattering experiment (Bragg condition)


interference of -light in a crystal structure ~ 0.5 AE = 0.05 nm elastic scattering assumed total photon mom. const. direction changes

2 :=
1 2 d

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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( Bragg condition )
geometrical relations : 2.27 a ) 1 = d sin ( ) 2.1c) = 2 + 1 = 2d sin ( ) 2.27b) 2 = d sin ( )

Bragg condition:

2.28) = nd ; 2.2b) nd = 1,2.. 2.29) = 2d sin( ) = 2d sin( 2)

2 :=
1 2 d

2.30)

2d sin( 2) = nd

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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( ) Measurement (characterization) of Crystal structure
Lattice constants are small lattice atoms can be used as slits for photons lattice ~ AE range probe with light

Scattering experiment (Laue condition)


interference of -light in a crystal structure ~ 0.5 AE = 0.05 nm elastic scattering assumed total photon mom. const. direction changes 0

k=2/

0 k=2/

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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( )
Measurement (characterization) of Crystal structure
geometrical relations : 2.31a ) 1 = a cos( 0 ) 2.31c) = 2 1 = a (cos( ) cos( 0 )) 2.31b) 2 = a cos( ) interference : 2.31d ) = na

Momentum conservation

k
k`

Scattering experiment (Laue condition)


interference of g-light in a crystal structure ~ 0.5 AE = 0.05 nm elastic scattering assumed total photon momentum const. direction changes 0

r a
ka cos ka (cos cosa) ka cos

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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( Crystal structure
- momentum equation from interference condition (eq.2.31d)

2.32a ) k a (cos( ) cos( 0 ) ) = 2 na r r 2.32b) k a = 2 na

(k = 2 )

- Laue condition for 3D cosines of directions (0,0,0) (,,)

r a

r c

r r r = nc c r Tp ,q ,r

3D Laue

r r p = na a

r b

r r q = nb b

r r 2.33a ) k a (cos( ) cos( 0 )) = 2 na 2.33d ) k a = 2 na r r 2.33b) k b (cos( ) cos( 0 )) = 2 nb 2.33e) k b = 2 nb r r 2.33c) k c (cos( ) cos( 0 )) = 2 nc 2.33 f ) k c = 2 nc
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Semiconductor Physics I
Chap.2.2.2 Reciprocal lattice ( ) Reciprocal lattice and Laue condition
- reformulation Laue - define Brillouin zone - Prediction E(k) (k) from scattering experiment

reciprocal base : r r r r r r 2.34a ) a * a = b * b = c * c := 2 r r r r r r 2.34b) a * b = b * c = b * c := 0 r r r 2.34c) a* = (2 Vcell ) b c ; r r r 2.34d ) b * = (2 Vcell ) c a; r r r 2.34e) c * = (2 Vcell ) a b ; r reciprocal vector G : r r r r 2.34 f ) G = na a * + nb b * + nc c *
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Semiconductor Physics I
Chap.2.2.2 Reciprocal lattice ( ) Reciprocal lattice and Laue condition
- scalar product between G and T (for T see p. 51)

r r 2.35) G T = na p + nb q + nc r = 2 int eger

* reformulation Laue condition with G


- Interpretation Laue as momentum conservation in the crystal - Rewriting Laue k=G by square of k construction of Brillouin zone

momentum conserv. r r 2.36a) k = G r r 2.36b) k T = 2 int eger

scattering experiment r r r 2.37a) k = k k ` and rewrite Laue


2

2.37b)

r r k = k` ~ G G 2.37e) k = 2 2
~ 2

2.37c) k 2 = (k `+G ) = k `2 +2 k `G + G 2 2.37d ) 0 = 2 k `G + G


2

r r with G = G
~

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Semiconductor Physics I
Chap.2.2.2 Reciprocal lattice ( Laue scattering )

continue Laue condition


From 2.37e) one gets a graphical Solution of the Laue scattering problem interference for ki if ki on a plane with Gi as normal vector of that plane

Graphical solution Laue scattering ~ r G plane 1 k1 2

1/b 1/a

G2 2
~

r k2

G plane 2 2

G1 2
~ r r G k1 1 2

~ r r G k2 2 2

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Semiconductor Physics I
Chap.2.2.3 Description of periodicity

2.38)

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Semiconductor Physics I
Chap.2.2.3 Description of periodicity
2.39a) 2.39b)

2.39c)

2.39d) 2.39e)

2.39f)

n=p=0

2.39g)
56

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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice )

2.40a)

2.40b)

2.40c)

2.41)

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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice )

2.42)

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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice )

2.43a)

2.43b)

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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice, examples)
2.44a) 2.44b) 2.45a) 2.45b) 2.45c) 2.44c)

2.46)

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Semiconductor Physics I
Chap.2.3 Brillouin Zone
* The Brillouin zone (BZ) (Wigner-Seitz cell in reciprocal space)
- construction: - trace reciprocal lattice point O to next neighbour - draw a perpendicular line between next neighbours - Geometrical meaning: each vector k, k`from O which meets an edge of the BZ fulfils Laue condition - Laue condition (Fig. 7.7) 2.47a) k = G = 2/a (n,k,l) 2.47b) 0 = -2k`G +G2 2.47c) k`cos = G/2

Brillouin zone

k` O 2/a k 2/a k`cos

r k2

*Special directions
k = [100] cross section 1. BZ k = [111] cross section 1. BZ k = [000] origin of BZ X-point L-point -point
61

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Semiconductor Physics I
Chap.2.3 Brillouin zone (reciprocal lattice, examples)
2.48)

real Space fcc


conventional

2.49)

primitive

2.50)

reciprocal Space fcc


conventional

primitive
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Semiconductor Physics I
Chap.2.3 Brillouin zone (Brillouin zone, specific directions)
BZ fcc

BZ bcc

BZ Hex.

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Semiconductor Physics I
Appendix 1 Diffraction Methods

2.51a)

2.51b)

2.51c) SC-Phys-I_Schweizer-2010
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Semiconductor Physics I
Appendix 1 Diffraction methods (Bragg scattering)

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Semiconductor Physics I
Appendix 1 Diffraction methods (Bragg scattering)

2.52a)

2.52b)

2.52c)

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Semiconductor Physics I
Appendix 1 Diffraction methods ( )

2.53)

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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )

X-rays are created shooting fast electrons into Metal Emitted radiation consists of a broad background (Bremsstrahlung) e some characteristic intense lines Two processes take place the electrons change their direction the acceleration and / or deceleration of charges leads to emission of radiation

Ze

e*

2.54 a ) I ( ) Z ( max ) 2.54 b) h max = eU 0


This radiation with continuous (white) spectrum is called Bremsstrahlung
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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )

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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )

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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )

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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )

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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )
A single crystal is placed stationary In a beam of x-rays or neutron radiation of continuous wavelength commonly 0.2 2 AE For certain directions there is a match of angle and radiation of a particular wavelength diffracts off a plane of distance d:

2.55)

2 d sin = n

Each reflection spot consists of only one wavelength

Laue method for crystal orientation / symmetry


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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )

stereographic projection intersection points

cubic crystal

intersection point 111

stereographic Projection point 111 south pole intersection points of cubic crystal surface normals with position sphere SC-Phys-I_Schweizer-2010
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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )

The complete reflection spots of a cubic crystal with [001] direction in north-south orientation in stereographic projection Symmetry axes according multiples ( ) of rotation axes Indicated

Weimantel / Hamann, Festkrperphysik

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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )

( h-k l )

(000)

Sl
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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )

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Semiconductor Physics I
Appendix 1 Diffraction methods (rotating crystal )

scattering cone

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Semiconductor Physics I
Appendix 1 Diffraction methods (rotating crystal )

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Semiconductor Physics I
Appendix 1 Diffraction methods (Debye-Scherrer powder method )

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Semiconductor Physics I
Appendix 1 Diffraction methods (Debye-Scherrer powder method )

2.56) Tab. 2.13

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Semiconductor Physics I
Appendix 2: Scattering amplitude (detailed discussion )

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Semiconductor Physics I
Appendix 2: Scattering amplitude (detailed discussion )

2.57a)

2.57b) 2.57c)

r r R k' R k r r r r r r 2.57f) R k ' = k cos( , R )

2.57d)

2.57e)

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Appendix 2: Scattering amplitude (Fourier description )
2.58a) 2.58b)

2.58c)

2.59a)

2.59b)

(see also p.86)

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Appendix 2: Scattering amplitude (Reciprocal lattice )
2.60a)

2.61a)

2.61b)

2.61c)

2.60b)

2.62a) 2.62b)

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85

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Appendix 2: Scattering amplitude ( Laue condition alternative derivation )

r r K a

r K

r K`
0

a (cos cos 0 ) = n a 2

or

r K

r r K a r r K `a
3D Laue :

r a

a (cos cos 0 ) = 2 n a or r r r r r K ` K a K a = 2 n a

r r K a = 2 n a r r K b = 2 n b r r K c = 2 n c

reciprocal lattice vector G : Laue for r K = G


86

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Semiconductor Physics I
Appendix 2: Scattering amplitude (Fourier description )

2.63)

2.64)

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87

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Appendix 2: Scattering amplitude (Ewald construction )

2.65) 2.66)

origin

G2/2
reflection plane 2 with G2/2

K`

G1/2 K
reflection plane 1 with G1/2
88

2.67)

r r K G 2 = G 2 2 and

r r K `G 1 = G 1 2 2.68)

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Semiconductor Physics I
Appendix 2: Scattering amplitude (Ewald construction )

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89

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Appendix 2: Scattering amplitude (Ewald construction )

K sphere according orientation of crystals in powder K = reciprocal lattice vector G K Triangle in b) is isosceles

K = 2k sin 2.69) 2

Ewald sphere plane section of a) SC-Phys-I_Schweizer-2010


90
Solidstate Physics Schweizer 2006

Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )

2.70)

2.71) 2.72)

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91

Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )

2.73)

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92

Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )

(with S from page 92)

2.74)

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93

Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )

even

even + odd

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94

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Appendix 2: Scattering amplitude (Geometrical form factor )

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95

Semiconductor Physics I
Appendix 2: Scattering amplitude (atomic form factor )
(see fj in expression for amplitude A on page92)

2.75) 2.76)

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Appendix 2: Scattering amplitude (atomic form factor )
With total Scattering amplitude: A
A k = f j exp ( i ( j + mnp )k ) = exp ( i mnp k ) f j exp ( i j k )
m j mnp

IA)

Laue

with IB )

exp ( i mnp k ) 0 if k = G mnp A k = M 3 S G IC ) S G = f j (G ) exp ( i j G ) S G ( hkl ) = f j (G ) exp ( i 2 (x j h + y j k + z j l ))


j

envelope function: geometrical factor atomic form factor

k`

r r r r for G = 2 hA + kB + lC ID )

(xj (j=1,2,3) measured from mnp )

One finds for the atomic form factor fj


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97

mnp

Semiconductor Physics I
Appendix 2: Scattering amplitude (atomic form factor )
z

k`
2

Scattering of photon on atom electron distribution n ( ) Eq. IA

IE )

scattering efficiency of po int like electron ) r r r r IF ) k = 2 k sin( ) cos( )


0

(f

r r f j = f 0 dV n( ) exp i k

IG ) dV = 2 d sin( ) d d
For assumed spherical electron distribution we get n = n ( | | ) Eq. IIA and finally fj (Eq. III )

= =

IIH )

f j = f0

=0

with = 4 sin ( ) and 0d d n( ) exp(i 2 k sin ( ) cos( )) 2 sin( ) we k = G obtain =


2

( )

II _ I )

f j = 4 f 0 d 2 n ( )
0

sin (G ) G f 0 N el

for concentration of e approx. in atom center sin (G ) only regions 0 and 1 contribute G

IIJ )

f j = f 0 d 4 2 n ( ) =
0

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(N

el

number of electrons )

98

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Appendix 2: Scattering amplitude (atomic form factor )

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99

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Appendix 2: Scattering amplitude (Debye-Waller factor )

2.77)

2.78)

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100

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