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DATA SHEET
M3D176
Philips Semiconductors
Product specication
High-speed diode
FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 100 V Repetitive peak forward current: max. 225 mA.
The diode is type branded.
handbook, halfpage k
1N914
DESCRIPTION The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
MAM246
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 65 4 1 0.5 250 +200 175 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. MAX. 100 75 75 225 V V mA mA UNIT
1999 May 26
Philips Semiconductors
Product specication
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.5 VR = 20 V VR = 75 V VR = 20 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 Vfr forward recovery voltage when switched from IF = 50 mA; tr = 20 ns; see Fig.8 25 5 50 4 8 CONDITIONS IF = 10 mA; see Fig.3 1 MAX.
1N914
UNIT V nA A A pF ns
ns
2.5
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W K/W
1999 May 26
Philips Semiconductors
Product specication
High-speed diode
GRAPHICAL DATA
1N914
100
MGD289
handbook, halfpage
600
MBG464
IF (mA)
IF (mA) 400
(1) (2) (3)
50
200
0 0 100 T amb ( C)
o
200
0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2
Fig.2
Fig.3
MBG704
10
102
103
tp (s)
104
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 26
Philips Semiconductors
Product specication
High-speed diode
1N914
MGD006
MGD004
handbook, halfpage
1.2
10
Cd (pF) 1.0
(1) (2) (3)
10 0.8 1
101
0.6
0.4 0 10 VR (V) 20
f = 1 MHz; Tj = 25 C.
Fig.5
Fig.6
1999 May 26
Philips Semiconductors
Product specication
High-speed diode
1N914
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA.
1 k
450
I 90%
R S = 50
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
input signal
output signal
1999 May 26
Philips Semiconductors
Product specication
High-speed diode
PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads
1N914
SOD27
(1)
G1
DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.56 D max. 1.85 G1 max. 4.25 L min. 25.4 0 1 scale 2 mm
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 EIAJ SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09
DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.
1999 May 26
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
115002/03/pp8
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