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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D125

2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04

1997 May 29

IBon = 15 mA. 40 V). VCE = 20 V. VCE = 10 V fT transition frequency IC = 20 mA. 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN • Low voltage (max. open emitter 2N2222 VCEO MIN. ICon = 150 mA. APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector. f = 100 MHz 2N2222 2N2222A turn-off time 1997 May 29 UNIT − 2N2222A toff MAX.Philips Semiconductors Product specification NPN switching transistors 2N2222. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS 60 V − 75 V 2N2222 − 30 V 2N2222A − 40 V − 800 mA Tamb ≤ 25 °C − 500 mW 75 − 250 − MHz 300 − MHz − 250 ns collector-emitter voltage open base IC collector current (DC) Ptot total power dissipation hFE DC current gain IC = 10 mA. DESCRIPTION 3 handbook. connected to case • Linear amplification and switching. PNP complement: 2N2907A. halfpage 1 2 NPN switching transistor in a TO-18 metal package.1 Simplified outline (TO-18) and symbol. 2 3 MAM264 1 Fig. IBoff = −15 mA 2 .

2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case 1997 May 29 CONDITIONS in free air 3 VALUE UNIT 350 K/W 146 K/W . MAX.Philips Semiconductors Product specification NPN switching transistors 2N2222. SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. 2N2222A LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). UNIT open emitter 2N2222 − 60 V 2N2222A − 75 V 2N2222 − 30 V 2N2222A − 40 V 2N2222 − 5 V 2N2222A − 6 V collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 800 mA ICM peak collector current − 800 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW Tcase ≤ 25 °C − 1.

VEB = 500 mV. RS = 2 kΩ. note 1 − 2. collector cut-off current 2N2222A hFE MIN. IB = 50 mA. VEB = 3 V − 10 nA IC = 0. VCB = 50 V 2N2222A hFE MAX. note 1 0. VCE = 10 V 50 − IC = 10 mA. VCE = 10 V. IB = 50 mA. B = 200 Hz 4 .Philips Semiconductors Product specification NPN switching transistors 2N2222. IB = 15 mA. note 1 − 400 mV IC = 500 mA. Tamb = −55 °C collector-emitter saturation voltage 2N2222A VBEsat base-emitter saturation voltage 2N2222 VBEsat IC = 500 mA. note 1 − 2 V − 8 pF − 25 pF 2N2222 250 − MHz 2N2222A 300 − MHz − 4 dB DC current gain DC current gain IC = 10 mA.1 mA. IB = 15 mA. note 1 − 1. VCE = 20 V. VCE = 10 V. IB = 15 mA. f = 1 kHz. Tamb = 150 °C − 10 µA IC = 0. IB = 50 mA. VCB = 50 V. 2N2222A CHARACTERISTICS Tj = 25 °C unless otherwise specified. collector cut-off current 2N2222 ICBO CONDITIONS transition frequency noise figure 2N2222A 1997 May 29 IC = 20 mA. f = 100 MHz IC = 200 µA.6 V IC = 150 mA. note 1 − 1. IB = 15 mA. Tamb = 150 °C − 10 µA IE = 0. IB = 50 mA.6 1. SYMBOL ICBO PARAMETER IEBO emitter cut-off current hFE DC current gain VCEsat − 10 nA IE = 0. VCE = 5 V. VCE = 10 V 75 − IC = 150 mA. VCB = 10 V. note 1 50 − IC = 150 mA. note 1 100 300 35 − 2N2222 30 − 2N2222A 40 − IC = 150 mA. VCB = 60 V − 10 nA IE = 0.6 V IC = 150 mA. VCE = 10 V 35 − IC = 1 mA. note 1 − 1 V IC = 150 mA. VCB = 60 V. f = 1 MHz 2N2222A fT F UNIT IE = 0. note 1 − 300 mV IC = 500 mA. VCE = 10 V. VCE = 1 V.3 V IC = 500 mA.2 V IC = 500 mA. f = 1 MHz Ce emitter capacitance IC = ic = 0. note 1 collector-emitter saturation voltage 2N2222 VCEsat base-emitter saturation voltage 2N2222A Cc collector capacitance IE = ie = 0.

UNIT Switching times (between 10% and 90% levels). IBon = 15 mA.2 ton turn-on time ICon = 150 mA. δ ≤ 0.5 V. tp = 10 µs.5 V. R1 = 68 Ω. VBB ndbook. tr = tf ≤ 3 ns. VBB = −3. full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 9. T = 500 µs. IBoff = −15 mA − 35 ns td delay time − 10 ns tr rise time − 25 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns Note 1. Pulse test: tp ≤ 300 µs.02.5 V. Oscilloscope input impedance Zi = 50 Ω. MAX. see Fig. RC = 160 Ω. VCC = 29.2 Test circuit for switching times. 2N2222A PARAMETER CONDITIONS MIN. 1997 May 29 5 oscilloscope . R2 = 325 Ω.Philips Semiconductors Product specification NPN switching transistors SYMBOL 2N2222. Fig. RB = 325 Ω.

2N2222A PACKAGE OUTLINE Metal-can cylindrical single-ended package.94 1.31 4.0 12.47 0.Philips Semiconductors Product specification NPN switching transistors 2N2222.1 0.7 0.41 5.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 May 29 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 6 .03 0.70 4.30 4.45 5.54 0.74 2.9 15.55 1. 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.

or systems where malfunction of these products can reasonably be expected to result in personal injury. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Stress above one or more of the limiting values may cause permanent damage to the device. 2N2222A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data. it is advisory and does not form part of the specification. Application information Where application information is given. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). 1997 May 29 7 . Product specification This data sheet contains final product specifications. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.Philips Semiconductors Product specification NPN switching transistors 2N2222. supplementary data may be published later. devices. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances.

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