Proceedings of the 4th International Conference on

Nanostructures (ICNS4)

12-14 March 2012, Kish Island, I.R. Iran

SYN

SYN 117

Effect of Surface Morphology of Depositing Silicon on Poly Silicon and Improved Electerical Properties of Polysilicon Based Devices by Deposting ClAlPC
S. Salimian*, M.E. Azimaraghi Department of physics, Tarbiat Moalem University, Tehran, 19-14911, Iran *sedisalimian@gmail.com

This paper investigates the effect of morphology of deposition silicon on poly silicon substrate that it can use as gas sensor. As we shown the PoSi and Si/Si devices had better electrical properties than Si/PoSi devices . So we deposited 40 nm ClAlPC on devices by stepping method. So we had smaller capacity in AC measurement and smaller resistivity in V-I (DC) measurement. The scanning electron microscopy (SEM) analysis shown the pores of Si/Porous Poly-Si are smaller than Porous poly-silicon gas sample. Electrical analysis shown interesting information about AC and DC electrical properties of devices. Keywords: Gas sensor; Porous poly-silicon; Electrochemical method; Deposition SYN 118

Plotoelectrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy of etched Si (110) at two different current density were studied. Both samples showed PL peak in the visible spectral range situated from 650 nm to 750 nm. The corresponding changes in Raman spectra at different current density are discussed. The blue shift in the PL and Raman peaks is consequent of the quantum confinement effect and defect states of surface Si nanocrystallites complexes and hydrogen atoms of the PSi (110) samples. The attenuated total reflection (ATR) results show both hydrogen and oxygen related IR modes in the samples which can be used to explain the PL effect. Keywords: Porous silicon (110); Electrochemical etching, Low-symmetry surface, Photoluminescence, Raman Spectroscopy SYN 120

Enhancement of Photoluminescent Properties of Porous Silicon Carbide Nanocrystallites by UVAssisted Electrochemical Etching
N. Naderi, M. R. Hashim* Nano-optoelectronic Research Lab, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia *roslan@usm.my

2-Dimentional Multi Tunneling Effect of PtSi/Porous Si Schottky Barrier

H. Mehrara*, A. Erfanian, M. Zahedinejad Department of Electrical Engineering, Khajeh Nasir Toosi University of Technology, Seyyed-Khandan Bridge, Tehran, Iran *h.mehrara@ieee.org

We report a multi tunnelling junction characteristic in p-type porous silicon core coated with thin film platinum silicide. Detailed analysis of electron transport in this device admits the existence of a structure like a two-dimensional multi tunnelling junctions (2D-MTJ) clearly originate from the sharp edge of created platinum silicide on porous surface. Furthermore, using SIMON simulator, electrical characteristics of proposed 2D-MTJ that modelled as a set of islands, has been extracted to investigate experimental data curves. In accordance with both studies, same oscillations based on coulomb blockade oscillations were observed. In addition the value of current tends to increase proportionally with temperature and for high drain voltage; the device behaves like a single island single electron tunnelling (SET) junction as the simulation predicts. This is probably due to this fact that multiple tunnelling junctions are electrically enlarged and merged into a single island owing to the high applied drain voltage. Also temperature dependence of the coulomb oscillation as a function of gate voltage offers the possible application of this device up to room treatment without cooling payments in comparison to MTJs. Keywords: Porous Si; PtSi; Schottky barriers; Multi tunnelling junctions; Single electron tunnelling SYN 119

Porous silicon carbide (PSC) has been successfully fabricated by UV assisted electrochemical etching of 6H-SiC substrate using direct current densities of 10, 15 and 20 mAcm-2. The morphological and optical characterizations of PSC have been reported. The photoluminescence (PL) of PSC has been optimized and related to the morphology of the surface which is controllable by etching parameters. Scanning electron microscopy demonstrates that the current density can be considered as an important etching parameter to control the porosity and uniformity of PSC. Hence, it can optimize the PL properties of porous samples. The PL peak intensity of PSC could be enhanced and the crystal quality could be improved with the increase in the etching current density as compared to non-porous crystalline 6H-SiC. Keywords: Photoluminescence; Porous silicon carbide; UVassisted electrochemical etching SYN 121

Modeling the Influence of Etching Parameters on the Creation of the Silicon Nanowire Array Structure Using the Design of Experiments (DOE) Methodology
M. Amouzgar*, M. Kahrizi Department of Electrical and Computer Engineering, Concordia University, Montreal H3G 2W1, Canada *m_amouzg@encs.concordia.ca

Effect of Current Density on Photoluminescence, IR and Raman Properties of Anisotropic Nano Porous Silicon (110)
M. Amirhoseiny*, Z. Hassan, S. S. Ng Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia * maa10_phy070@student.usm.my

The design of experiments (DOE) methodology is used to model the behaviour of the output responses of a set of experiments based on the input parameters. The goal is to fabricate a uniform array of silicon nanowires using a two-step fabrication approach. The desired outcome of the first step of fabrication is a textured silicon surface fully and uniformly covered with pyramids. The uniformity and surface coverage of this textured surface is heavily influenced by the input parameters such as etching solution concentration, time, temperature and agitation. Having too many parameters with wide ranges would require performing many experiments to determine the optimal ranges for those

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