Ordering number : ENN6912

2SA2039 / 2SC5706
PNP / NPN Epitaxial Planar Silicon Transistors

2SA2039 / 2SC5706
High Current Switching Applications

Features

Package Dimensions
unit : mm 2045B
[2SA2039 / 2SC5706]
6.5 5.0 4

DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.

Features
Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable w w w . D a t a She e t 4 U . cpower o m dissipation.

1.5

2.3

0.5

0.85 0.7

5.5

7.0

0.8 1.6

1.2

0.6

7.5

0.5

1 : Base 2 : Collector 3 : Emitter 4 : Collector

2.3

2.3

SANYO : TP

Package Dimensions
unit : mm 2044B
[2SA2039 / 2SC5706]
6.5 5.0 4 2.3

1.5

0.5

5.5

7.0

0.85

0.5

1 0.6

0.8

2.5

1.2

1.2 0 to 0.2

1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA

2.3

2.3

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30101 TS IM TA-3232 No.6912-1/5

2SA2039 / 2SC5706 Specifications

Note*( ) : 2SA2039 Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings (-50)80 (-50)80 (--)50 (--)6 (--)5 (--)7.5 (--)1.2 0.8 15 150 --55 to +150 Unit V V V V A A A W W C C

Electrical Characteristics at Ta=25C

www.DataSheet4U.com
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(-)50mA IC=(--)2A, IB=(-)100mA IC=(--)2A, IB=(-)100mA IC=(--)10A, IE=0 IC=(--)100A, RBE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. (--50)80 (--50)80 (--)50 (--)6 (30)35 (230)300 (15)20 200 (360)400 (24)15 (--115)90 (--195)135 (--255)160 (--430)240 (-)0.89 (--)1.2 min Ratings typ max (--)1 (--)1 560 MHz pF mV mV V V V V V ns ns ns Unit A A

Swicthing Time Test Circuit

PW=20s D.C.1% INPUT VR10 50 RB + 100F VBE= --5V + 470F VCC=25V IB1 IB2 OUTPUT 25

10IB1= --10IB2= IC=1A For PNP, the polarity is reversed.

No.6912-2/5

2SA2039 / 2SC5706
--5

IC -- VCE
2SA2039

IC -- VCE
2SC5706

80m

70mA

Collector Current, IC -- A

--3

m --90
--2

80m A --

A --70m

--60m

A --

50mA

Collector Current, IC -- A

90m

--4

60mA 50mA 40mA 30mA

20mA

0 --1

100m

A 0m
A --30m --20mA

--40mA

--10mA

10mA

--5mA

5mA
1

--1

0 0 --0.4 --0.8 --1.0 --1.2

IB=0
--1.4 IT02974

0 0 0.4 0.8 1.0

IB=0
1.2 1.4 IT02975

Collector-to-Emitter Voltage, VCE -- V

--4.0 --3.5

Collector-to-Emitter Voltage, VCE -- V

4.0 3.5

IC -- VBE

IC -- VBE
2SC5706 VCE=2V

2SA2039 VCE= --2V

Collector Current, IC -- A

--3.0 --2.5 --2.0 --1.5

Collector Current, IC -- A

www.DataSheet4U.com

3.0 2.5 2.0 1.5 1.0 0.5 0

Ta=7 5

--1.0 --0.5 0 0 --0.2 --0.4

--0.6

--0.8

--1.0

--1.2

--1.4

0.2

0.4

0.6

Ta=7 5C 25C --25C

0.8 1.0

25C --25 C

1.2

1.4 IT00155

Base-to-Emitter Voltage, VBE -- V

1000 7 5

IT00154 1000

Base-to-Emitter Voltage, VBE -- V

hFE -- IC

hFE -- IC
Ta=75C --25C 25C 2SC5706 VCE=2V

2SA2039 VCE= --2V

7 5

DC Current Gain, hFE

DC Current Gain, hFE

3 2

Ta=75C 25C --25C

3 2

100 7 5 3 2

100 7 5 3 2

10 --0.01

5 7 --0.1

5 7 --1.0

Collector Current, IC -- A
--10000 7 5 3 2

5 7 --10 IT00156

10 0.01

5 7 0.1

5 7 1.0

VCE(sat) -- IC

Collector Current, IC -- A
1000

5 7 10 IT00157

VCE(sat) -- IC
2SC5706 IC / IB=20

Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV

Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV

2SA2039 IC / IB=20

7 5 3 2

--1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT02976

100 7 5 3 2

C 75 Ta= C --25

25

--2

C 5

10 0.01

5 7 0.1

5 7 1.0

25
2

= Ta

C
3

75

Collector Current, IC -- A

Collector Current, IC -- A

5 7 10 IT02978

No.6912-3/5

2SA2039 / 2SC5706
--10000 7 5 3 2

VCE(sat) -- IC
2SA2039 IC / IB=50

10000

VCE(sat) -- IC
2SC5706 IC / IB=50

Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV

Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV

7 5 3 2 1000 7 5 3 2 100 7 5 3 2

--1000 7 5 3 2 --100 7 5 3 2 --10 --0.01 2 3 5 7 --0.1

7 Ta=

5C 5C --2

7 Ta=

5C

5 --2
C

C 25
2 3 5 7 --1.0 2 3

25
2 3 5 7 0.1 2 3

Collector Current, IC -- A
--10 7

5 7 --10 IT02977

10 0.01

5 7 1.0

VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V

Collector Current, IC -- A
10

5 7 10 IT02979

VBE(sat) -- IC

Base-to-Emitter Saturation Voltage, VBE(sat) -- V

5 3 2

2SA2039 IC / IB=50

7 5 3 2 1.0 7 5 3 2 0.1 0.01

2SC5706 IC / IB=50

www.DataSheet4U.com

--1.0 7 5 3 2

Ta= --25C

Ta= --25C

75C

25C

75C

25C

--0.1 --0.01

5 7 --0.1

5 7 --1.0

Collector Current, IC -- A
5 3

5 7 --10 IT00162

5 7 0.1

5 7 1.0

Collector Current, IC -- A
5

5 7 10 IT00163

Cob -- VCB
2SA2039 f=1MHz
Output Capacitance, Cob -- pF

Cob -- VCB

3 2 100 7 5 3 2 10 7 5 3 2

2SC5706 f=1MHz

Output Capacitance, Cob -- pF

2 100 7 5 3 2 10 7 5 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 IT00164

5 7 0.1

5 7 1.0

5 7 10

Collector-to-Base Voltage, VCB -- V

1000 7

f T -- IC
Gain-Bandwidth Product, f T -- MHz

Collector-to-Base Voltage, VCB -- V

1000

5 7 100 IT00165

f T -- IC

Gain-Bandwidth Product, f T -- MHz

5 3 2

2SA2039 VCE= --10V

7 5 3 2

2SC5706 VCE=10V

100 7 5 3 2

100 7 5 3 2

10 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3

10

Collector Current, IC -- A

5 7 --10 IT00166

0.01

5 7 0.1

5 7 1.0

Collector Current, IC -- A

5 7 10 IT00167

No.6912-4/5

2SA2039 / 2SC5706
2 10 7 5

ASO
ICP=7.5A
10ms 1ms 50 0 DC IC=5A s op er ati DC on (T op c= era 25 tio C n( Ta ) =2 5 C)

1.0 0.9

PC -- Ta
2SA2039 / 2SC5706

100ms

Collector Dissipation, PC -- W

Collector Current, IC -- A

0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0

10 0

3 2 1.0 7 5 3 2 0.1 7 5 3 2

No

he

at

sin

0.01 0.1

2SA2039 / 2SC5706 Tc=25C Single Puls For PNP, the minus sign(--)is omitted
2 3 5 7 1.0 2 3 5 7 10 2 3

Collector-to-Emitter Voltage, VCE -- V

18 16 15 www.DataSheet4U.com 14

5 7 100 IT02980

20

40

60

80

100

120

140

160

Ambient Temperature, Ta -- C

IT02981

PC -- Tc

2SA2039 / 2SC5706

Collector Dissipation, PC -- W

12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- C

IT02982

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2001. Specifications and information herein are subject to change without notice.
PS No.6912-5/5