Cau Kien Dien Tu Slide

HC VIN CNG NGH BU CHNH VIN THNG
BI GING MN
Ging vin: ThS. Trn Thy H
in thoi/E-mail: 0912166577 / thuyhadt@gmail.com
B mn: K thut in t- Khoa KTDT1
Hc k/Nm bin son: Hc k 1 nm 2009
CU KIN IN T
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BI GING MN : CU KIN IN T
B MN: K THUT IN T- KHOA KTDT1
GING VIN: ThS. TRN THY H
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Gii thiu mn hc
Mc ch mn hc:
- Trang b cho sinh vin nhng kin thc v nguyn l hot ng, c tnh,
tham s v lnh vc s dng ca cc loi cu kin (linh kin) in t lm
nn tng cho cc mn hc chuyn ngnh.
- Mn hc khm ph cc c tnh bn trong ca linh kin bn dn, t SV c
th hiu c mi quan h gia cu to hnh hc v cc tham s ca cu kin,
ngoi ra hiu c cc c tnh v in, s tng ng, phn loi v ng
dng ca chng.
Cu kin in t?
L cc phn t linh kin ri rc, mch tch hp (IC) to nn mch
in t, cc h thng in t.
Gmcc ni dung chnh sau:
+ Gii thiu chung v cu kin in t.
+ Vt liu in t
+ Cu kin th ng: R, L, C, Bin p
+ it
+ Transistor lng cc BJT.
+ Transistor hiu ng trng FET
+ Cu kin quang in t.
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Cu kin in t
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Gii thiu chung v Cu kin in t
- Cu kin in t ng dng trong nhiu lnh vc. Ni bt nht l
ng dng trong lnh vc in t - vin thng, CNTT.
- Cu kin in t rt phong ph, nhiu chng loi a dng.
- Cng ngh ch to linh kin in t pht trin mnh m, to ra
nhng vi mch c mt rt ln (Vi x l Intel COREi7 -
khong hn 1,3 t Transistor)
- Xu th cc cu kin in t c mt tch hp ngy cng cao, c
tnh nng mnh, tc ln
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ng dng ca cu kin in t
- Cc linh kin bn dn nh diodes, transistors v mch tch hp
(ICs) c th tm thy khp ni trong cuc sng (Walkman, TV,
t, my git, my iu ho, my tnh,). Chng ta ngy cng
ph thuc vo chng v nhng thit b ny c cht lng ngy
cng cao vi gi thnh r hn.
- PCs minh ho rt r xu hng ny.
- Nhn t chnh em li s pht trin thnh cng ca nn cng
nghip my tnh l vic thng qua cc k thut v k nng cng
nghip tin tin ngi ta ch to c cc Transistor vi kch
thc ngy cng nh gim gi thnh v cng sut.
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Cu trc chng trnh
Chng 1- Gii thiu chung
Chng 2 Vt liu in t
Chng 3 - Cu kin th ng
Chng 4 -it
Chng 5 -Transistor lng cc
Chng 6 - Transistor hiu ng trng
Chng 7 - Thyristor
Chng 8 - Cu kin quang in t
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Ti liu hc tp
- Ti liu chnh:
+ Bi ging: Cu kin in t - Mnh H, Trn Thc Linh, Trn
Thy H.
+Slide bi ging Cu kin in t - Trn Thy H
- Ti liu thamkho:
1. Electronic Devices and Circuit Theory, Ninth edition, Robert
Boylestad, Louis Nashelsky, Prentice - Hall International, Inc, 2006.
2. MicroElectronics, an Intergrated Approach, Roger T. Home -
University of California at Berkeley, Charles G. Sodini MIT , 1997
3. Gio trnh Cu kin in t v quang in t, Trn Th Cm, Hc vin
CNBCVT, 2002
4. Electronic Devices, Second edition, Thomas L.Floyd, Merill Publishing
Company, 1988.
5. Introductory Electronic Devices and Circuits, conventional Flow
Version, Robert T. Paynter, Prentice Hall, 1997.
6. Linh kin bn dn v vi mch, H vn Sung, NXB GD, 2005
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CHNG 1.
GII THIU CHUNG
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Chng 1 Gii thiu chung
1.1 Khi nim c bn
1.2 Phn t mch in c bn
1.3 Phng php c bn phn tch mch in
1.4 Phng php phn tch mch phi tuyn
1.5 Phn loi cu kin in t
1.6 Gii thiu v vt liu in t
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1.1 Khi nim c bn
+ in tch v dng in
+ DC v AC
+ Tn hiu in p v dng in
+ Tn hiu (Signal) v H thng (System)
+ Tn hiu Tng t (Analog) v S (Digital)
+ Tn hiu in p v Tn hiu dng in
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in tch v dng in
+ Mi in t mang in tch: 1.602 x 10
-19
C (Coulombs)
+ 1C = in tch ca 6.242 x 10
18
in t (electron)
+ K hiu in tch: Q. n v: coulomb (C)
Dng in (Current)
L dng dch chuyn ca cc in tch thng qua vt dn hoc phn t
mch in
K hiu: I, i(t)
n v: Ampere (A). 1A=1C/s
Mi quan h gia dng in v in tch
) ( ) ( t q
dt
d
t i =
}
+ =
t
t
t q dt t i t q
0
) ( ) ( ) (
0
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DC v AC
DC (Direct current): Dng mt chiu
Dng in c chiu khng i theo thi gian.
Trnh hiu nhm: DC = khng i,
V d
I=3A, i(t)=10 + 5 sin(100tt) (A)
AC (Alternating Current): Dng xoay chiu
Dng in c chiu thay i theo thi gian
Trnh hiu nhm: AC = Bin thin theo thi gian
V d:
( )
( ) t t i
t t i
t
t
200 cos 12 5 ) (
; 2 cos 2 ) (
+ =
=
Nikola Tesla
(1856 1943)
Thomas Edison
(1847 1931)
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Signal (Tn hiu)
Tn hiu: l i lng vt l mang thng tin vo v ra ca h
thng.
V d
Ting ni, m nhc, m thanh
Dao ng t cc h thng c hc
Chui video v nh chp
nh cng hng t (MRI), nh x-ray
Sng in t pht ra t cc h thng truyn thng
in p v dng in trong cu kin, mch, h thng
Biu in tm (ECG), in no
Emails, web pages .
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H thng (Systems) v m hnh
M hnh (Model): Cc h thng trong thc t c th m t bng m
hnh th hin mi quan h gia tn hiu u vo v tn hiu u ra ca
h thng.
Mt h thng c th cha nhiu h thng con.
M hnh h thng c th c biu din bng biu thc ton hc, bng
biu, th, gii thut
V d h thng lin tc:
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Tn hiu Tng t (Analog) v S (Digital)
Tng t (Analog)
Tn hiu c gi tr bin i lin tc theo thi gian
Hu ht tn hiu trong t nhin l tn hiu tng t
Digital
Tn hiu c gi tr ri rc theo thi gian
Tn hiu lu trong cc h thng my tnh l tn hiu s,
theo dng nh phn
t
x(t)
n
x[n]
Analog Signal Digital Signal
9 e ) ( , t x t Z e ] [ , n x n
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Tn hiu in p v Tn hiu dng in
Dng in (Current)
L dng dch chuyn ca cc in tch thng qua vt dn hoc
phn t mch in
K hiu: I, i(t)
n v: Ampere (A). 1A=1C/s
Ngun to tn hiu dng in: Ngun dng
in p (Voltage)
Hiu in th gia 2 im
Nng lng c truyn trong mt n v thi gian ca in tch
dch chuyn gia 2 im.
K hiu: v(t), V
in
; U
in
; V
out
; V
1
;U
2
.
n v: Volt (V)
Ngun to tn hiu in p: Ngun p
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1.2 Cc phn t mch in c bn
+ Ngun c lp
+ Ngun c iu khin
+ Phn t th ng
+ K hiu cc phn t mch in trong s mch (Schematic)
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Ngun c lp
Ngun Pin
+
V
Ngun p c lp l tng
I, i(t)
+
_ V; v(t)
Ngun dng c lp l tng
Ngun p c lp khng l tng
+
_ V; v(t)
R
S
Ngun dng c lp khng l tng
I, i(t)
R
S
Ngun dng
Ngun p
+
_
I, i(t)
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Ngun c iu khin
Ngun p
Ngun dng
Ngun p c iu khin l tng Ngun p c iu khin khng l tng
+
_ U(I)
+
_ U(U)
+
_ U(I)
R
S
+
_ U(U)
R
S
Ngun dng c iu khin l tng
Ngun dng c iu khin khng l tng
I(I) I(U)
I(I)
R
S
I(U)
R
S
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1.3 Phng php c bn phn tch mch in
+ m1 (method 1) : Cc nh lut Kirchhoff : KCL, KVL
+ m2: Lut kt hp (Composition Rules)
+ m3:Xp chng (Superposition)
+ m4:Bin i tng ng Thevenin, Norton
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m1: Cc nh lut Kirchhoff : KCL, KVL
Mc tiu: Tm tt c cc thnh phn dng in v in p trong mch.
Cc bc th hin:
1. Vit quan h V-I ca tt c cc phn t mch in
2. Vit KCL cho tt c cc nt
3. Vit KVL cho tt c cc vng
Rt ra c h nhiu phng trnh, nhiu n => Gii h
Ch : Trong qu trnh vit cc phng trnh c th rt gn ngay
gim s phng trnh s n.
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KCL - Kirchhoffs Current Law
Kirchhoffs current law (KCL)
Tng gi tr cng dng in i vo v ra ti mt nt bng
khng
Tng gi tr cng dng in i vo nt bng Tng gi tr
cng dng in i ra khi nt.
=
=
N
n
n n
t i a
1
0 ) (
Nt
1
i
2
i
3
i
0
3 2 1
= + i i i
3 2 1
i i i = +
1
i
2
i
3
i
Gustav Kirchhoff
(1824 1887)
a
n
= 1 Nu i
n
(t) i vo nt
a
n
=-1 Nu i
n
(t) i ra khi nt
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KVL - Kirchhoffs Voltage Law
Kirchhoffs voltage law (KVL)
Tng in p trong mt vng kn bng khng
V d:
=
=
N
n
n n
t v b
1
0 ) (
loop 1
loop 2
1
5
3
9
+
_
+
+
+
_
_
3
12
4
+
+
+
_
_
_ _
loop 3
0 9 3 5 1 : 1 Loop = + + V V V V
0 5 4 12 3 : 2 Loop = + V V V V
0 9 3 4 12 3 1 : 3 Loop = + + V V V V V V
b
n
= 1 Nu v
n
(t) cng chiu vi vng
b
n
=-1 Nu v
n
(t) ngc chiu vi vng
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m2: Lut kt hp (Composition Rules)
V d
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+ m3: Xp chng (Superposition)
- Trong mch tuyn tnh (gm cc phn t tuyn tnh v ngun c lp
hoc ngun c iu khin) c th phn tch mch theo nguyn l xp
chng nh sau:
+ Cho ln lt mi ngun tc ng lm vic ring r, cc ngun khc
khng lm vic phi theo nguyn tc sau y: Ngun p ngn mch, Ngun
dng h mch.
+ Tnh tng cng cc p ng ca mch do tt c cc ngun tc ng ring
r gy ra.
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e=?
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+ m4: Bin i tng ng Thevenin, Norton
V
TH
: in p h mch
I
N
: Dng in ngn mch
R
TH
=R
N
=V
TH
/I
N
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+ m4: Bin i tng ng Thevenin, Norton
V d: Bin i tng ng
Ngun dng Ngun p
+
_ V
R
S
I
R
S
S
R
V
I =
+
_ U(V)
R
S
I(V)
R
S
S
R
V U
V I
) (
) ( =
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1.4 Phng php phn tch mch in phi tuyn
Mch in cphn t phi tuyn (D)
- Phng php phn tch mch phi
tuyn
+ Phng php phn tch: da vo
m1, m2, m3
+ Phng php th
+Phn tch gia s (Phng php
tnhiu nh - small signal method)
R
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Phng php phn tch
- p dng phng php m1, m2,
m3 cho cc phn t tuyn tnh v
phi tuyn, c h 2 phng
trnh, 2 n i
D
v v
D
- Gii h phng trnh:
+ Dng phng php th sai
+ Dng phng php s
=> Vic gii h phng trnh phc tp
R
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Phng php th
- Gii h 2 phng trnh (1) v (2) bng phng php th
ng ti
(Loadline)
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Phn tch gia s (Phng php tn hiu nh - small signal method
Thc hin theoccbc sau:
1. Xc nh ch lm vic mt chiu ca mch (I
D
, V
D
)
2. Xc nh m hnh tn hiu nh ca cc phn t phi tuyn ti im lm
vic mt chiu tnh.
3. V m hnh tng ng tn hiu nh ca ton mch v tnh ton cc
tham s tn hiu nh (i
d
, v
d
)
4. Vit kt qu ca tham s cn tnh trong mch
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M hnh hnh tng ng ca phn t phi tuyn
- Ch mt chiu:
- M hnh tn hiu nh ca phn t phi tuyn:
- S mch tng ng
tn hiu nh:
R
R
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1.5 Phn loi cu kin in t
Phn loi da trn c tnh vt l
Phn loi da trn chc nng x l tn hiu
Phn loi theo ng dng
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Phn loi da trn c tnh vt l
- Linh kin hot ng trn nguyn l in t v hiu ng b mt: in
tr bn dn, DIOT, BJT, JFET, MOSFET, in dung MOS IC t mt
thp n mt siu c ln UVLSI
- Linh kin hot ng trn nguyn l quang in nh: quang tr,
Photoiot, PIN, APD, CCD, h linh kin pht quang LED, LASER, h lnh
kin chuyn ho nng lng quang in nh pin mt tri, h linh kin
hin th, IC quang in t
- Linh kin hot ng da trn nguyn l cm bin nh: H sensor
nhit, in, t, ho hc, h sensor c, p sut, quang bc x, sinh hc
v cc chng loi IC thng minh trn c s t hp cng ngh IC truyn
thng v cng ngh ch to sensor.
- Linh kin hot ng da trn hiu ng lng t v hiu ng mi:
cc linh kin c ch to bng cng ngh nano c cu trc siu nh
nh : B nh mt in t, Transistor mt in t, ging v dy lng t,
linh kin xuyn hm mt in t, cu kin da vo cu trc sinh hc
phn t
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Phn loi da trn loi tn hiu lm vic
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Phn loi theo chc nng
Linh kin th ng: R,L,C
Linh kin tch cc: DIOT, BJT, JFET, MOSFET, IC, Thysistor,
Linh kin thu quang, pht quang
(+ Linh kin tch cc (Active Devices): l linh kin c kh nng
iu khin in p, dng in v c th to ra chc nng hot
ng chuyn mch trong mch "Devices with smarts!" ;
+ Linh kin th ng (Passive Devices) l linh kin khng th c
tnh nng iu khin dng v in p, cng nh khng th to ra
chc nng khuch i cng sut, in p, dng din trong mch,
khng yu cu tn hiu khc iu khin ngoi tn hiu thc
hin chc nng ca n Devices with no brains!)
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CHNG 2.
VT LIU IN T
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Gii thiu v vt liu in t
C s vt l ca vt liu in t
Cht cch in
Cht dn in
Vt liu t
Cht bn dn
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2.1. C s vt l ca vt liu in t
- L thuyt vt l cht rn
- L thuyt vt l c hc lng t
- L thuyt di nng lng ca cht rn
- L thuyt vt l bn dn
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a. L thuyt vt l cht rn
- Vt liu ch to phn ln cc linh kin in t l loi vt liu tinh th rn
- Cu trc n tinh th: Trong tinh th rn nguyn t c sp xp theo mt
trt t nht nh, ch cn bit v tr v mt vi c tnh ca mt s t nguyn
t chng ta c th d on v tr v bn cht ha hc ca tt c cc nguyn
t trong mu.
- Tuy nhin trong mt s vt liu c th nhn thy rng cc sp xp chnh xc
ca cc nguyn t ch tn ti chnh xc ti c vi nghn nguyn t. Nhng
min c trt t nh vy c ngn cch bi b bin v dc theo b bin ny
khng c trt t - cu trc a tinh th
- Tnh cht tun hon ca tinh th c nh hng quyt nh n cc tnh cht
in ca vt liu.
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b. L thuyt vt l c hc lng t
- Trong cu trc nguyn t, in t ch c th nm trn cc mc
nng lng gin on nht nh no gi l cc mc nng
lng nguyn t.
- Nguyn l Pauli: Mi in t phi nm trn mt mc nng
lng khc nhau.
- Mt mc nng lng c c trng bi mt b 4 s lng t:
+ n s lng t chnh: 1,2,3,4.
+ l s lng t qu o: 0, 1, 2, (n-1) {s, p,d,f,g,h}
+ m
l
s lng t t: 0,1, 2, 3 l
+ m
s
s lng t spin: 1/2
- n, l tng th mc nng lng ca nguyn t tng, e- c sp xp
lp, phn lp c nng lng nh trc.
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c. S hnh thnh vng nng lng (1)
- to thnh vt liu gi s c N nguyn t ging nhau xa v tn tin
li gn lin kt vi nhau:
+ Nu cc NT cc xa nhau n mc c th coi chng l hon ton c lp
vi nhau th v tr ca cc mc nng lng ca chng l hon ton
trng nhau (tc l mt mc trng chp).
+ Khi cc NT tin li gn nhau n khong cch c A
o
, th chng bt u
tng tc vi nhau th khng th coi chng l c lp na. Kt qu l
cc mc nng lng nguyn t khng cn trng chp na m tch ra
thnh cc mc nng lng ri rc khc nhau. V d mc 1s s to thnh
2.N mc nng lng khc nhau.
- Nu s lng cc NT rt ln v gn nhau th cc mc nng lng ri
rc rt gn nhau v to thnh mt vng nng lng nh lin tc
- S tch mt mc nng lng NT ra thnh vng nng lng rng hay
hp ph thuc vo s tng tc gia cc in t thuc cc NT khc
nhau vi nhau.
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c. S hnh thnh vng nng lng (2)
C 6 1s
2
2s
2
2p
2
Si 14 1s
2
2s
2
2p
6
3s
2
3p
2
Ge 32 1s
2
2s
2
2p
6
3s
2
3p
6
3d
10
4s
2
4p
2
Sn 50 1s
2
2s
2
2p
6
3s
2
3p
6
3d
10
4s
2
4p
6
4d
10
5s
2
5p
2
(Si)
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Minh ha s hnh thnh vng nng lng (1)
1s
2s
2p
Mc
a. Mt NT
c lp
S trng
thi
2
6
1s
2s
2p
2 4
12
b. 2 NT khng
tng tc
4
S trng
thi
4
12
c. 2 NT
tng tc
4
S trng
thi
2N
6N
d. N Nguyn t
tng tc
2N
S trng
thi
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Minh ha s hnh thnh vng nng lng (1)
- Cc vng nng lng cho php xen k nhau, gia chng l vng cm
- Cc in t trong cht rn s in y vo cc mc nng lng trong cc
vng cho php t thp n cao.
- C th c : vng in y hon ton (thng c nng lng thp), vng
trng hon ton (thng c nng lng cao), vng in y mt phn.
- Xt trn lp ngoi cng:
+ Vng nng lng c in y cc in t gi lVnghatr
+ Vng nng lng trng hoc cha in y ngay trn vng ha tr
gi l Vngdn
+ Vng khng cho php gia Vng ha tr v Vng dn l Vngcm
- Ty theo s phn b ca cc vng m tinh th rn c tnh cht in khc
nhau: Cht cch in dn in km, Cht dn in dn in tt, Cht bn
dn.
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Minh ha s to thnh nhng vng nng lng khi cc nguyn t thuc phn nhm
chnh nhm IV c a vo to ra tinh th
Cm
4N trng thi
khng c in t
vng
dn
vng
ho tr
4N trng thi c 4N
in t
S
P
6N trng thi c
2N in t
2N trng thi c
2N in t
Cc mc nng lng ca lp trong cng khng b nh hng bi cu trc mng
tinh th
Nng
lng
ca cc
trng
thi
E
X X
1
X
2
X
3
X
4
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Cu trc di nng lng ca vt cht
E
G
> 2 eV
E
E
C
E
V
E
G
< 2 eV
E
E
C
E
V
E
G
= 0
E
E
C
E
V
Di
ho tr
Di
dn
in t
L trng
Di
dn
Di
ho
tr
a- Cht cch in; b - Cht bn dn; c- Cht dn in
+ dn in ca ca vt cht cng tng theo nhit
+ Cht bn dn: S mt 1 in t trong di ha tr s hnh thnh mt l trng
(Mc nng lng b trng trong di ha tr in y, l trng cng dn in nh
cc in t t do)
+ Cu trc di nng lng ca kim loi khng c vng cm, in t ha tr li kt
yu vi ht nhn, di tc dng ca in trng ngoi cc e ny c th d dng di
chuyn ln cc trng thi cao hn to thnh cc e t do, nn kim loi dn in tt.
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2.2. Cc loi vt liu in t
Cc vt liu s dng trong k thut in, in t thng c
phn chia thnh 4 loi:
- Cht cch in (cht in mi).
- Cht dn in.
- Vt liu t.
- Cht bn dn
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Trang 51
1. CHT CCH IN (CHT IN MI)
a. nh ngha
- L cht dn in km, l cc vt cht c in tr sut cao vo khong
10
7
10
17
Om nhit bnh thng. Cht cch in gm phn ln
cc vt liu hu c v mt s vt liu v c.
- c tnh ca vt liu nh hng rt ln n cht lng ca linh kin.
Cc c tnh gm: tr s gii hn bn v in, nhit, c hc, cch
in, s tn hao in mi Cc tnh cht ca cht in mi li ph
thuc vo nhit v m mi trng.
b. Cc tnh cht ca cht in mi.
b.1 thm thu in tng i (hay cn gi l hng s in mi)
b.2 tn hao in mi (P
a
)
b.3 bn v in ca cht in mi (E
.t.
)
b.4 Nhit chu ng
b.5 Dng in trong cht in mi (I)
b.6 in tr cch in ca cht in mi
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Trang 52
b.1 Hng s in mi tng i
- Hng s in mi tng i ca ca 1 cht cch in c xc
nh bng t s gia in dung ca t in c cht in mi v in
dung ca t in c cng kch thc nhng l in mi chn khng
Trong :
+ C
d
l in dung ca t in s dng cht in mi;
+ C
0
l in dung ca t in s dng cht in mi l chn khng
hoc khng kh.
- Do c biu th kh nng phn cc ca cht in mi. Cht in
mi dng lm t in cn c hng s in mi c ln, cn cht in
mi dng lm cht cch in c c nh.
d
0
C
C
c =
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Trang 53
b.2 tn hao in mi (Pa)
tn hao in mi l cng sut in tn hao lm nng cht in
mi khi t n trong in trng, c xc nh thng qua dng in
r.
Trong :
U l in p t ln t in (V)
C l in dung ca t in dng cht in mi (F)
e l tn s gc o bng rad/s
tgo l gc tn hao in mi
- Nu tn hao in mi trong t in c bn l do in tr ca cc bn
cc, dn v tip gip (v d lp bc mng trong t mi ca v t gm)
th tn hao in mi s tng t l vi bnh phng ca tn s:
P
a
= U
2
e
2
C
2
R
2
a
P U Ctg = e o
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Trang 54
c. bn v in ca cht in mi (E.t.)
- Nu ta t mt cht in mi vo trong mt in trng, khi ta
tng cng in trng ln qu mt gi tr gii hn th cht
in mi mt kh nng cch in - ta gi l hin tng
nh thng cht in mi.
- Cng in trng tng ng vi im nh thng gi l
bn v in ca cht in mi (E
.t.
).
Trong : U
.t.
- l in p nh thng cht in mi
d - dy ca cht in mi
- Hin tng nh thng cht in mi c th do nhit, do in v
do qu trnh in ha.
dt
dt
U
E [KV/ mm; KV/ cm]
d
=
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Trang 55
e.Dng in trong cht in mi (I):
Khi t in mi trong in trng, trong in mi din ra 2 hin tng c bn
l: Hin tng phn cc in mi (trn b mt in mi xut hin cc in
tch tri du vi in tch trn b mt bn cc) v Hin tng dn in ca
in mi (trong in mi xut hin s chuyn di ca cc in tch t do to
thnh dng in c tr s nh gia cc bn cc. C 2 thnh phn dng in
nh sau:
- Dng in chuyn dch I
C.M.
(hay gi l dng in cm ng): Qu trnh
chuyn dch phn cc ca cc in tch lin kt trong cht in mi xy ra cho
n khi t c trng thi cn bng s to nn dng in phn cc hay cn
gi l dng in chuyn dch trong cht in mi I
C.M
.
- Dng in r I
r
: c to ra do cc in tch t do v in t pht x ra
chuyn ng di tc ng ca in trng, to ra dng in chy t bn cc
ny sang bng cc kia. Nu dng r ln s lm mt tnh cht cch in ca
cht in mi.
+ Dng in tng qua cht in mi s l: I = I
C.M.
+ I
r
+ Sau khi qu trnh phn cc kt thc th cht in mi ch cn dng in r.
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Trang 56
Phn loi v ng dng ca cht in mi.
Phn loi: Cht in mi th ng v tch cc
- Cht in mi th ng cn gi l vt liu cch in v vt liu t
in. y l cc vt cht c dng lm cht cch in v lm cht
in mi trong cc t in nh mi ca, gm, thu tinh, plyme tuyn
tnh, cao su, sn, giy, bt tng hp, keo dnh,... i vi vt liu dng
cch in th cn c thm thu in c nh, cn vt liu dng lm
cht in mi cho t in cn c c ln.
- Cht in mi tch cc l cc vt liu c c th iu khin c bng:
+ in trng c gm, thu tinh,..
+ C hc c cht p in nh thch anh
+ nh sng c cht hunh quang
Loi in mi ny dng trong cc b to tn hiu dao ng, b
lc...
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Trang 57
2. CHT DN IN
a. nh ngha
- Cht dn in l vt liu c dn in cao. Tr s in tr sut ca
n nh hn so vi cc loi vt liu khc. in tr sut ca cht dn
in nm trong khong 10
-8
10
-5
Om.
- Trong t nhin cht dn in c th l cht rn Kim loi, cht lng
Kim loi nng chy, dung dch in phn hoc cht kh in
trng cao.
b. Cc tnh cht ca cht dn in
b.1 in tr sut:
b.2 H s nhit ca in tr sut (o):
b.3 H s dn nhit :
b.4 Cng thot ca in t trong kim loi:
b.5 in th tip xc:
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Trang 58
2 CHT DN IN
b.1 in tr sut:
- in tr ca vt liu trong mt n vi thit din v chiu di:
- in tr sut ca cht dn in nm trong khong t: = 0,016 O.m
(ca bc Ag) n = 10 O.m (ca hp kim st - crm - nhm)
b.2 H s nhit ca in tr sut (o):
- H s nhit ca in tr sut biu th s thay i ca in tr sut khi
nhit thay i 1
0
C.
- Khi nhit tng th in tr sut cng tng ln theo quy lut:
b.3 H s dn nhit : [w/ (m.K)].
- H s dn nhit l lng nhit truyn qua mt n v din tch trong
mt n v thi gian khi gradien nhit bng n v.
S
R [ .m] , [ .mm] , [ .m]
l
= O O O
t 0
(1 t) = +o
T
Q St
l
A
=
A
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Trang 59
2 CHT DN IN
b.4 Cng thot ca in t trong kim loi:
- Cng thot ca kim loi biu th nng lng ti thiu cn cung cp cho
in t ang chuyn ng nhanh nht 0
0
C in t ny c th thot
ra khi b mt kim loi. E
W
= E
B
- E
F
Trong E
B
: nng lng cn in t thot ra khi b mt kim loi
E
F
: ng nng ca in t.
b.5 in th tip xc
- S chnh lch th nng E
AB
gia im A v B c tnh theo cng
thc:
V
AB
= E
AB
= E
W2
- E
W1
A
B
1 2
C
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Trang 60
Phn loi v ng dng ca cht dn in
Phn loi: 2 loi
- Cht dn in c in tr sut thp Ag, Cu, Al, Sn, Pb v
mt s hp kim Thng dng lm vt liu dn in.
- Cht dn in c in tr sut cao nh Hp kim Manganin,
Constantan, Niken-Crm, Cacbon thng dng ch to cc
dng c o in, cc in tr, bin tr, cc dy may so, cc thit
b nung nng bng in.
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Trang 61
3. VT LIU T (Magnetic material)
a. nh ngha.
- Vt liu t l vt liu khi t vo trong mt t trng th n b nhim t
(b t ha). V d: Thi st t cnh nam chm, thi st s b nam chm
ht, ngha l n b t ha v tr thnh nam chm
b. Cc tnh cht c trng cho vt liu t
b.1 T tr v t thm
b.2 t thm tng i (
r
)
b.3 ng cong t ha
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Trang 62
Ngun gc ca t trng
- Ngun gc ca t trng: dng in l ngun gc ca t trng hay
ni mt cch bn cht, chuyn ng ca cc in tch l ngun gc ca
t trng. Mi in tch chuyn ng sinh ra mt t trng, hay mt
lng cc t (to thnh mt mmen t, xem hnh v). Mmen t ca
mt nguyn t sinh ra c th do 2 nguyn nhn:
+ Chuyn ng qu o ca cc in t (mmen qu o L)
+ Chuyn ng t quay ca cc in t (mmen spin S). Spin l mt c
trng ca mt ht c bn.
- M men t m=i.S, chiu ca m xc nh theo quy tc vn nt chai v
hng vung gc vi din tch S.
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Trang 63
Tnh cht t ha
- Vt liu t t trong t trng n b t ha. Khi chng tr nn
c t tnh v sinh ra mt t trng ph (t trng ring B), do
t trng tng hp B trong cht b t ha nh sau:
Trong : B
0
: Vect cm ng t ca t trng ban u (t
trng ngoi t vo).
- Ty theo tnh cht v mc t ha, phn bit ba loi tnh cht
ca vt liu nh sau:
- Nghch t: B

ngc chiu vi B
0
- Thun t: B

cng chiu vi B
0
- St t: B

cng chiu vi B
0
v ln hn B
0
ban u nhiu ln
'
0
B B B + =
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Trang 64
Cc tnh cht c trng cho vt liu t
- Trong H: cng t trng ngoi.
H B
0 0
=
H B B . .
0 0
= =
t thm tng i :
- Trong : t thm tng i ca vt liu
T tr:
- T in tr, hay cn gi tt l t tr, l tnh cht ca mt s vt
liu, c th thay i in tr sut di tc dng ca t trng ngoi
..
- Ngi ta thng dng khi nim t s t tr ni ln ln ca
hiu ng t in tr, cho bi cng thc:
Trong : (H),(0),R(H),R(0) ln lt l in tr sut v in tr
ti t trng H v t trng H = 0.
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Trang 65
ng cong t ha
- ng cong t ha (hay y l ng congt haban u)
l th m t qu trnh t ha vt t t trng thi ban u cha
nhim t (trng thi kh t), m th hin trn th l s thay i
ca tnh cht t (thng qua gi tr ca t , cm ng t...) theo
gi tr ca t trng ngoi. phm vi cu trc vi m, qu trnh t
ha chnh l s thay i v cu trc t thng qua cc c ch khc
nhau.
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Trang 66
Phn loi v ng dng ca vt liu t
- Vt liu t mm c t thm cao v lc khng t nh (H
c
nh v
ln). lm li bin p, nam chm in, li cun cm cc loi st t
mm thng gp: St thi cha mt lng nh tp cht C, Mn, Si,
- Vt liu t cng c t thm nh v lc khng t cao (H
c
ln v
nh).
+ Phn chia theo ng dng chia vt liu t cng thnh 2 loi:
Vt liu ch to nam chm vnh cu.
Vt liu t ghi m, ghi hnh, gi m thanh, v.v..
+ Phn chia theo cng ngh ch to, chia vt liu t cng thnh:
- Hp kim thp c ti thnh Martenxit l vt liu n gin v r nht ch
to nam chm vnh cu.
- Hp kim l t cng.
- Nam chm t bt.
- Ferit t cng: Ferit Bari (BaO.6Fe
2
O
3
) ch to nam chm dng tn s
cao.
- Bng, si kim loi v khng kim loi dng ghi m thanh.
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Trang 67
1. nh ngha cht bn dn
2. Cu trc mng tinh th cht bn dn
3. Cht bn dn thun
4. Cht bn dn khng thun
5. Dng in trong cht bn dn
6. dn in cht bn dn
1.6.4.CHT BN DN
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Trang 68
1.6.4.1. nh ngha
- Cht bn dn l vt cht c in tr sut nm gia tr s in
tr sut ca cht dn in v cht in mi khi nhit phng,
= 10
-4
10
7
O.m
- Cht bn dn l cht m trong cu trc di nng lng c
rng vng cm l 0<E
G
<2eV.
- Cht bn dn trong t nhin: Bo (B), Indi (In), Gali (Ga)
nhm 3, Silic (Si), Gecmani (Ge) thuc nhm 4, Selen (Se), lu
hunh (S) nhm 6, Asen (As) thuc nhm 5, v.v.. hoc hp cht
nh clorua ng (CuCl), Asenic Canxi CaAs, Oxit ng CuO, v.v..
- Trong k thut in t hin nay s dng mt s cht bn dn c
cu trc n tinh th. Quan trng nht l hai nguyn t Gecmani v
Silic.
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Trang 69
1.6.4.2. Cu trc mng tinh th cht bn dn n Si
Mi nguyn t Si lin kt vi
4 nguyn t bn cnh
A 43 . 5
A 35 . 2
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1.6.4.2. Cu trc mng tinh th ca cht bn dn ghp
Ga
As
Cht bn dn ghp: Hp cht ca cc nguyn t thuc phn nhm
chnh nhm III v phn nhm chnh nhm V: GaAs, GaP, GaN,
quan trng trong cc cu kin quang in v IC tc cao
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Trang 71
1.6.4.3. Cht bn dn thun (Intrinsic semiconductor)
- Cht bn dn m mi nt ca mng tinh th ca n ch c
nguyn t ca mt loi nguyn t, v d nh cc tinh th Ge
(gecmani) Si (silic) nguyn cht ...
- V d xt tinh th Si, E
G
= 1,21eV (ti nhit 300K)
+4 +4 +4
+4 +4 +4
+4
+4 +4
Si
Si
Si
Si
Si
Si
Si
Si
Si
E
C
E
G
< 2 eV
E
E
V
Di
ho tr
Di
dn
in t
L trng
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Trang 72
S to thnh l trng v in t t do
- nhit phng mt s lin
kt cng ha tr b ph v to ra
in t t do v l trng.
- L trng cng c kh nng dn
in nh in t t do, mang
in tch v c cng ln vi
in tch in t.
- Bn dn thun c nng ht
dn l trng v nng ht dn
in t bng nhau: p = n = p
i
=
n
i
+4 +4 +4
+4 +4 +4
+4
+4 +4
Si
Si
Si
Si
Si
Si
Si
Si
Si
L
trng
in t
t do
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Trang 73
dn in ca cht bn dn o
n
- linh ng ca in t t do
p
- linh ng ca l trng
q in tch ca in t q=1,6.10
-19
C
+ Mt dng in khi cht bn dn t trong in trng ngoi
E:
n p
(n. p. ).q o = +
o
1
=
( ) E q p n E J
p n
. . . . . o + = =
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Trang 74
Qu trnh to ht ti in v qu trnh ti hp
- Tc to ht ti in ph thuc vo T nhng li c lp vi n v
p - nng ca in t t do v ca l trng :
- Trong khi tc ti hp li t l thun vi c n v p
- Trng thi n nh xy ra khi tc to v ti hp cn bng
- - Nu trong trng hp khng c cc ngun quang v ngun in
trng ngoi, trng thi n nh c gi l trng thi cn bng
nhit thermal equilibrium hay nh lut Mass-action:
optical thermal
G T G G + = ) (
np R
) ( T f np R G = =
) (
2
T n np
i
=
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Trang 75
Hm phn b Fermi-Dirac
- L c s xt s phn b ht ti in trong cht bn dn.
- Xt h gm N in t t do nm trng thi cn bng nhit ti
nhit T. Phn b cc in t tun theo nguyn l loi tr
Pauli. Tm phn b ca cc in t theo cc mc nng lng?
- Nguyn l loi tr Pauli l h qu ca mt nguyn l c bn hn,
l nguyn l khng phn bit gia cc ht ging nhau p dng
vo trng hp h gm cc ht farmion (cc ht c spin l bi
1/2).
- p dng nguyn l nng lng ti thiu: xc sut mt h
gm N ht ging ht nhau nm trong trng thi nng lng E t
l nghch vi E theo hm m exp, c th l:
P
N
(E) ~ exp(-E/kT).
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Trang 76
Hm phn b Fermi-Dirac
- Bng cch p dng nguyn l trn km theo vi nguyn l loi tr Pauli
ngi ta tnh ton ra li gii l hm phn b Fermi-Dirac: Xc sut
mc nng lng E [eV] b in t lp y ti nhit T tun theo hm
phn b Fermi- Dirac nh sau:
1 exp
1
) (
+
|
.
|
\
|

=
KT
E E
E f
F
-Trong
K: Hng s Boltzmann (eV/
0
K)
K= 8,6210
-5
eV/
0
K
T - Nhit o bng
0
K
E
F
- Mc Fermi (eV)
- E
F
: mc nng lng Fermi l mc nng lng ln nht cn b e- lp
y ti nhit T=0
0
K
f(E)
11
0,5
0
-1
0 0,2 1
(E-E
F
)
T=0
0
K
T=300
0
K
T=2500
0
K
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Trang 77
- Phn tch hm Fermi-Dirac:
T = 0
0
K
E > E
F
=> f(E) = 0 E < E
F
=> f(E) =1
T > 0
0
K (T=300
0
K; KT=26.10
-3
eV)
E - E
F
>>KT
E - E
F
<<- KT
KT
E E
F
e E f
) (
) (

~
KT
E E
F
e E f
) (
1 ) (

~
0 0.5 1 f(E)
E
E
C
E
F
E
V
Vng dn
Vng ho tr
T = 0
0
K
E
G
T = 1000
0
K
T = 300
0
K
T E f
F
=
2
1
) (
E
F
[eV]- Mc nng lng Fermi
E
C
[eV]- y ca vng dn
E
V
[eV]- nh ca vng ha tr
1 exp
1
) (
+
|
.
|
\
|

=
KT
E E
E f
F
F
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Trang 78
Nhn xt hm phn b Fermi-Dirac:
- Ti 0
0
K, f(E) = 1 khi E < E
F
. Nh vy tt c cc mc nng lng thp hn
E
F
u b in t chim ng v tt c cc mc nng lng cao hn E
F
u
trng rng.
- Xc sut cc vng chim ng khi T > 0
0
K u lun bng 1/2 ti E = E
F
,
khng ph thuc vo nhit .
- Hm f(E) i xng qua im F, do , xc sut in t chim ng mc
nng lng E
F
+ AE bng xc sut cc mc nng lng m in t khng
chim ng mc E
F
- AE .
- Xc sut mc nng lng khng b in t chim ng s l:
1 exp
1
1 ) ( 1
+
|
.
|
\
|

=
KT
E E
E f
F
- Trong cht bn dn, xc sut mc nng lng E [eV] b in t in
y cng tun theo hm phn b Fermi-Dirac.
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Trang 79
Nng ht ti in trong cht bn dn
- Tnh nng in t t do trong vng dn n:
+ Nng ht dn in t t do nm trong mc nng lng t E n E+dE
trong di dn l dn [s in t/m
3
]: dn=2.N(E).f(E).dE
+ N(E) - l mt trng thi trong di dn (s lng trng thi/ eV/ m
3
).
( )
2 / 1
) .(
C
E E E N =
2 / 3 2 / 3
3
) .( ) 2 (
4
n n
q m
h
t
=
( )
} }

~ =
C
F
C
E
KT
E E
C
E
dE e E E dE E f E N n
) (
2 / 1
. . . 2 ). ( ). ( . 2
KT
E E
C
C F
e N n
) (
.

=
2 / 3
2
2
. 2
|
.
|
\
|
=
h
kT m
N
n
C
t
Mt trng thi hiu dng trong vng dn
m
n
Khi lng hiu dng ca in t t do
k[J/
0
K] Hng s Boltzmann, h hng s Plank , T [
0
K]
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Trang 80
- Tnh nng l trng trong vng ha tr p:
+ Nng ht dn l trng nm trong mc nng lng t E n E+dE trong
di ha tr l dp [s l trng/m
3
]:
dp=2.N(E).(1-f(E)).dE
+ N(E) - l mt trng thi trong di ha tr (s lng trng thi/ eV/ m
3
).
( )
2 / 1
) .( E E E N
V
=
2 / 3 2 / 3
3
) .( ) 2 (
4
p p
q m
h
t
=
( )
} }

~ =
V
F
V
E
KT
E E
V
E
dE e E E dE E f E N p
0
) (
2 / 1
0
. . . 2 )). ( 1 ).( ( . 2
KT
E E
V
F V
e N p
) (
.

=
2 / 3
2
2
. 2
|
|
.
|
\
|
=
h
kT m
N
p
V
t
Mt trng thi hiu dng trong vng ha tr
m
p
Khi lng hiu dng ca l trng
k[J/
0
K] Hng s Boltzman, h hng s Plank , T [
0
K]
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Trang 81
Xt tch:
Vi bn dn thun
m
p,
m
n
l khi lng hiu dng ca ht ti in l trng v in t t do,
chng ph thuc vo cu trc di nng lng.
-Nu m
p
~ m
n
th mc Fermi E
Fi
nm gia vng cm.
-Nu m
p
=m
n
mc Fermi ch nm gia vng cm khi T=0
0
K
Nng ht ti in trong cht bn dn thun nhit phng rt nh, nn
cht bn dn thun c kh nng dn in km.
KT E
i i
G
e T A p n p n
/ 3 2 2
. . .

= = =
( ) =
|
.
|
\
|
=
2 / 3
3
2
. .
. 2
. 4
p n
m m
h
k
A
t
n
p
V C
F i i
m
m
kT
E E
E p n
i
ln
4
3
2
+
+
= =
KT E
V C
KT
E E
V C
G
V C
e N N e N N p n
/
. . .

= =
2
V C
F
E E
E
i
+
=

2 / kT E
v c i
G
e N N n

=
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Trang 82
- Cht bn dn m mt s nguyn t nt ca mng tinh th ca n c
thay th bng nguyn t ca cht khc gi l cht bn dn tp.
- C hai loi cht bn dn tp:
+ Cht bn dn tp loi N gi tt l Bn dn loi N (Donors)
+ Cht bn dn tp loi P gi tt l Bn dn loi P (Acceptors)
Donors: P, As, Sb Acceptors: B, Al, Ga, In
1.6.4.4. Cht bn dn tp
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Trang 83
a. Cht bn dn loi N (cht bn dn tp loi cho)
- Thm mt t tp cht l nguyn t thuc nhm 5, th d As, P, Sb vo
cht bn dn thun Ge hoc Si. Trong nt mng nguyn t tp cht s
a 4 in t trong 5 in t ha tr ca n tham gia vo lin kt cng
ha tr vi 4 nguyn t Ge (hoc Si) bn cnh; cn in t th 5 s tha
ra v lin kt ca n trong mng tinh th l rt yu, nhit phng
cng d dng tch ra tr thnh ht ti in - in t t do trong tinh th
v nguyn t tp cht cho in t tr thnh cc ion dng c nh.
E
E
C
E
D
E
V
Vng dn
Vng ho tr
Mc cho
0,01eV
E
G
+4 +4 +4
+4 +5 +4
+4 +4
Si
Si
Si
Si
Sb
Si
Si
Si
Si
e
5
+4
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Trang 84
- Nng in t t do trong cht bn dn loi N tng nhanh, nn
tc ti hp tng nhanh, do nng l trng gim xung
nh hn nng c th c trong bn dn thun.
- Trong cht bn dn loi N, nng ht dn in t (n
n
) nhiu
hn nhiu nng l trng p
n
v in t c gi l ht dn a
s, l trng c gi l ht dn thiu s.
n
n
>> p
n
n
n
=N
d
+p
n
~ N
d
N
d
Nng ion nguyn t tp cht cho (Donor)
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Trang 85
b. Cht bn dn loi P (cht bn dn tp loi nhn)
- Thm mt t tp cht l nguyn t thuc nhm 3, th d In, Bo, Ga vo cht
bn dn thun Ge hoc Si. Trong nt mng nguyn t tp cht ch c 3 in
t ha tr a ra to lin kt cng ha tr vi 3 nguyn t Ge (hoc Si) bn
cnh, mi lin kt th 4 trng v to thnh mt l trng. in t ca mi
lin kt gn c th nhy sang hon chnh mi lin kt th 4 cn
trng . Nguyn t tp cht va nhn thm in t s tr thnh ion m v
ngc li nguyn t Ge/Si va c 1 in t chuyn i s to ra mt l trng
v nguyn t ny s tr thnh ion dng c nh.
E
E
C
E
A
E
V
Vng dn
Vng ho tr
Mc nhn 0,01eV
E
G
+
4
+
4
+
4
+
4
+
3
+
4
+
4
+
4
+
4
Si
Si
Si
Si
In
Si
Si
Si
Si
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Trang 86
- Nng l trng trong cht bn dn loi P tng nhanh, nn tc
ti hp tng nhanh, o nng l in t t do gim xung
nh hn nng c th c trong bn dn thun.
- Trong cht bn dn loi P, nng ht dn l trng (p
p
) nhiu
hn nhiu nng in t t do n
p
v l trng c gi l ht
dn a s, in t t do c gi l ht dn thiu s.
p
p
>> n
p
p
p
=N
a
+n
p
~ N
a
N
a
Nng ion nguyn t tp cht nhn (Acceptor)
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Trang 87
Nng ht ti in trong bn dn tp
Tng qut trong cht bn dn ta c: (nh lut mass-action)
- Trong cht bn dn loi N:
- Trong cht bn dn loi P:
] [ . 9 , 3 . . .
3 2 / 2 / 3 / 3 2 2
= = = = cm e T e T A p n p n
KT E KT E
i i
G G
a
i
p
i
p
N
n
p
n
n
2 2
= =
d
i
n
i
n
N
n
n
n
p
2 2
= =
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Trang 88
- Trong thc t Silicon thng c pha tp c cht Donor v Acceptor.
Gi s nng pha tp tng ng l N
d
, N
a
.
- to thnh bn dn N th N
d
>N
a
, in t cho ca nguyn t Donor s
ion ha tt c cc nguyn t Acceptor hon thnh lin kt cn thiu
in t, nng nguyn t Donor to ra in t t do l: N
d
-N
a
, qu
trnh nh vy gi l qu trnh b Compensation. in tch trong cht
bn dn N trung ha nn: N
d
- N
a
+ p - n = 0.
- Nu N
d
>>N
a
nn N
d
-N
a
>>n
i
th c th tnh gn ng nng cc loi
ht ti in nh nh sau:
n
n
N N n p
i
a d
2
) ( = =
( ) 0 .
2 2
=
i a d
n n N N n
( ) ( )
( )
2
2
4
1
2 2
a d
i a d a d
N N
n N N N N
n
=
a d
i
a d
N N
n
p N N n
~ ~
2
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Trang 89
- Tng t to thnh bn dn P th N
a
>N
d
, trong bn dn cng
xy ra qu trnh b, tnh ton tng t ta c nng l trng
trong trng hp ny c tnh nh sau:
- Nu N
a
>>N
d
nn N
a
-N
d
>>n
i
th c th tnh gn ng nng cc
loi ht ti in nh nh sau:
( ) ( )
( )
2
2
4
1
2 2
d a
i d a d a
N N
n N N N N
p
=
d a
i
d a
N N
n
n N N p
~ ~
2
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Trang 90
Mc Fermi trong cht bn dn tp
- Mc Fermi trong cht bn dn N (N
d
cng tng mc Fermi cng tin gn
ti y ca di dn):
d
C
C F
N
N
KT E E ln =
d
KT
E E
C n
N e N n
C F
= =
) (
.
E
F
i
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Trang 91
- Mc Fermi trong cht bn dn P (N
a
cng tng mc Fermi cng tin gn
xung nh ca di ha tr):
a
V
V F
N
N
KT E E ln + =
a
KT
E E
V
N e N p
F V
= =
) (
.
i
E
F
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Trang 92
- Mc Fecmi trong bn dn tp l mt hm ca nhit cho cc gi tr
nng tp cht khc nhau (V d vi Si).
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Trang 93
Quan h nng ht dn trong bn dn thun v tp
-Gi s mc mc Fermi ca bn dn thun l E
F
= E
Fi
-Nng ht dn trong bn dn thun n
i
=p
i
:
kT
E E
C
C F
e N n
) (
.

=
/ ) (
/ ) (
kT E E
i c
kT E E
c i
i
F c
Fi c
e n N
e N n n

=
= =
/ ) (
/ ) (
kT E E
i v
kT E E
v i
v Fi
v Fi
e n N
e N n p

=
= =
/ ) ( kT E E
i
Fi F
e n n

=
/ ) ( kT E E
i
F Fi
e n p

=
- Nng ht dn trong cht bn dn tp l:
kT
E E
V
F V
e N p
) (
.

=
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Trang 94
Dng in trong cht bn dn
- Dngin khuch tn: Dng in to ra do s chuyn ng ngu nhin do nhit ca
cc ht ti in (thng thng gi tr trung bnh =0, nn b qua) v s khuch tn cc
ht ti in t vng c mt cao sang vng c mt thp hn:
- ( D
P
[m
2
/sec] - l h s khuch tn ca l trng;
D
n
- l h s khuch tn ca in t;
dP/dx, dn/dx gradient nng l trng v in t t do)
- Dngdin tri (Dngin cun): Dng chuyn dch ca cc ht ti in do tc ng
ca in trng E:
J
driff
=J
driff(n)
+ J
driff(p)
= o.E = q(n
n
+ p
p
).E
dx
dn
D q J
n n diff
.
) (
=
dx
dp
D q J
p p diff
.
) (
=
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Trang 95
- Dng tng cng trong cht bn dn:
J = J
driff
+ J
diff
= J
n
+ J
p
- Einstein Relation: linh ng v h s khuch tn D c xc
theo m hnh vt l da trn c s mt s lng ln ht ti chu nhng
chuyn ng nhit ngu nhin vi s va chm thng xuyn, 2 hng s
ny t l vi nhau theo Einstein Relation nh sau:
- p dng cng thc trn cho in t t do v l trng trong cht bn dn
- in p nhit Thermal Voltage:
( )
dx
dn
qD E qn J J J
n n n diff n driff n
+ = + =
) ( ( )
dx
dp
qD E qp J J J
p p p diff p driff p
= + =
) (
q
kT D
=
Hng s Boltzmann k =1,38.10

-23
[J/
0
K]
q [C] in tch ht ti, T [
0
K ]
q
kT
D
n n
=
q
kT
D
p p
=
q
kT
V
th
=
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Trang 96
dn in cht bn dn
- dn in ca cht bn dn khi c c 2 ht ti in tham gia
o = q(n
n
+ p
p
)
- Vi bn dn loi n, n>>p, dn in l:
o
n
= qN
D
n
[(O.m)
-1
]
- Vi bn dn loi p, p>>n, dn in l:
o
p
= qN
A
p
[(O.m)
-1
]
+ Cht tp cng nhiu th in tr sut cng gim, tuy nhin linh ng
n
v
p
li gim khi nng cht pha tp tng, nh vy c ch dn in
trong vng pha tp mnh tng i phc tp
- Nng gii hn cc nguyn t tp cht mun a vo tinh th bn dn
c quyt nh bi gii hn ha tan ca tp cht y. Nu vt qu gii
hn ny th hin tng kt ta s xy ra, khi tp cht s khng cn
c cc tnh cht nh mong mun na.
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Trang 97
Tng kt
- Cht bn dn thun, khng thun.
- Hm phn b Fermi-Dirac, Mc Fermi
- Nng ht ti trong cht bn dn:
- Nng in t t do v l trng trong cht bn dn c th thay i do:
Pha tp, in t trng, Nhit , Chiu sng.
- Mc Fermi trong cht bn dn thay i theo nng pha tp
- Cht bn dn thun c dn in nh, cht bn dn khng thun dn
in ln.
2 2
.
i i
p n p n = =
/ ) ( kT E E
i
Fi F
e n n

=
/ ) ( kT E E
i
F Fi
e n p

=
( )
dx
dn
qD E qn J J J
n n n diff n driff n
+ = + =
) ( ( )
dx
dp
qD E qp J J J
p p p diff p driff p
= + =
) (
q
kT
D
n n
=
q
kT
D
p p
=
q
kT
V
th
=
) . . (
q n
q n q o + =
p n
J J J + =
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Trang 98
Mt s hng s
- Electronic charge, q = 1,610
-19
C
- Permittivity of free space, c
o
= 8,85410
-14
F/cm
-Boltzmann constant, K = 8,6210
-5
eV/K,
k=1,38 10
-23
J/K
- Planck constant, h = 4.1410
-15
eV-s
- Free electron mass, m
0
= m
e
= 9.110
-31
kg
- Thermal voltage V
th
= kT/q = 26 mV (at T= 300
0
K)
Si Ge GaAs
m
n
/m
0
0.26 0.12 0.068
m
p
/m
0
0.39 0.30 0.50
Si Ge GaAs InAs
n
(cm
2
/Vs) 1400 3900 8500 30000
p
(cm
2
/Vs) 470 1900 400 500
at T= 300 K
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Trang 99
Trng tnh in trong cht bn dn K cn bng nhit
- Xc nh mi quan h gia in trng, in th tnh in, v
mt in tch trong cc cu trc bn dn.
- Quan h gia in th v nng ht ti in trong iu kin cn
bng nhit
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Trang 100
Cht bn dn nng pha tp khng ng u
- Xt cht bn dn n c nng pha tp ng u
+ Ht ti in a s l in t, c rt t l trng, nng in t ng u
khng ph thuc vo v tr X: n
0
=N
d
+ Mt in tch trong cht bn dn n: [C/cm
3
]
=
(+)
-
(-)
= q.N
d
q.n
0
= q. (N
d
-n
0
)=0
+ Nh vy khng hnh thnh cc vng tch in khng gian trong bn dn
c nng pha tp ng u.
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Trang 101
- Xt cht bn dn n-Si c nng pha tp khng ng u
+ Nng in t trong bn dn xc nh nh th no iu kin cn
bng nhit?
- Ban u mi hnh thnh do c s chnh lch v nng ht ti in
nn c dng khuch tn, sau cht bn dn t iu kin cn bng
nhit v phn b nng in t trong trng hp ny n
0
(x)=N
d
(x),
nh vy trong cht bn dn s to ra nhng vng tch in, v vy to ra
trng tnh in bn trong cht bn dn.
- iu kin cn bng nhit: J
n
= 0 v J
p
= 0 bt k v tr x no
J
n
(x) = J
drift(n)
(x) + J
diff(n)
(x) = 0
- Vy n
0
(x)=? tha mn iu kin trn?
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Trang 102
- in trng trongcht bndn ?
+ Phng trnh Gauss: Trong : c
s
- h s in mi tuyt i.
+ in trng trong cht bn dn
c xc nh:
- in th tnh in |(x) ?
t |(0)= |
ref
s
dx
dE
c
=
( ) ( ) ( )
}
=
x
s
x E x E
0
1
0
c
E
dx
d
=
|
( ) ( ) ( )
}
=
x
dx x E x
0
0 | |
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Trang 103
- Xc nh n
0
(x), (x), E(x), v |(x) ?
- Xut pht t cc PT:
(1)
(2)
0
0
0
= + =
dx
dn
qD E qn J
n n n

E
dx
d
=
|
- Thay (1) v (2) ta c
( )
0
2
2
n N
q
dx
d
dx
dE
d
s s
= =
=
c c
u
dx
n d D
n
dn D
dx
d
n
n
n
n 0
0
0
ln

u
= =
( ) ( ) 3
ln
2
2
0
2
d
s
N n
kT
q
dx
n d
=
c
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Trang 104
Gii phng trnh trn s xc nh c n
0
(x) v cc tham s cn li.
- Tuy nhin khng tm c cch gii chung cho hu ht cc trng hp.
- Nu N
d
(x) bin thin rt nh th n
0
(x) cng bin thin rt nh, do
d
2
(lnn
0
)/dx
2
rt nh nh vy n
0
(x)~ N
d
(x), khng xut hin cc vng in
tnh khng gian, trng hp ny gi l cn trung ha.
( ) ( ) 3
ln
2
2
0
2
d
s
N n
kT
q
dx
n d
=
c
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Trang 105
Quan h Boltzman(Quan h gia |(x) v nng ht ti in)
Theo PT (1)
q
kT D
n
n
=
dx
n d D
dx
d
n
n 0
ln
u
= M
Tch phn 2 v ta c:
M chng minh c: |= |
ref
khi n
0
=n
i
,Vy ta c quan h Boltzman:
Tng t vi l trng ta c:
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Trang 106
CHNG 3.
LINH KIN TH NG
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Trang 107
NI DUNG
1. in tr (Resistor)
2. T in (Capacitor)
3. Cun cm (Inductor)
4. Bin p (Transformer )
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Trang 108
3.1. in tr (Resistors)
1.1. nh ngha
1.2. Cc tham s k thut c trng ca in tr
1.3. K hiu ca in tr
1.4 Cch ghi v c tham s trn thn in tr
1.5. in tr cao tn v mch tng ng
1.6. Phn loi
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Trang 109
3.1.1 nh ngha
- in tr l phn t c chc nng ngn cn dng in trong mch
- Mc ngn cn dng in c c trng bi tr s in tr R:
R=U/I
- n v o: O, mO, O, kO, MO, GO, TO
- in tr c rt nhiu ng dng nh: nh thin cho cc cu kin bn dn,
iu khin h s khuych i, c nh hng s thi gian, phi hp tr
khng, phn p, to nhit Ty theo ng dng, yu cu c th v da
vo c tnh ca cc loi in tr la chn thch hp
- Kt cu n gin ca mt in tr thng:
V bc
Li
Vt liu cn in
M chp v chn in tr
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Trang 110
nh lut Ohm
nh lut Ohm
Biu thc nh lut Ohm theo dng in
Cng sut tiu tn tc thi trn in tr:
R t i t v ) ( ) ( =
R
+
_
) (t v
) (t i
G t v t i ) ( ) ( =
R
t v
R t i t v t i t p
) (
) ( ) ( ) ( ) (
2
2
= = =
v(t)
i(t)
Georg Ohm
(1789 1854)
3.1.1 nh ngha
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Trang 111
3.1.2. Cc tham s k thut v c tnh ca in tr
- Tr s in tr v dung sai
- H s nhit ca in tr
- Cng sut tiu tn danh nh
- Tp m ca in tr
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Trang 112
a. Tr s in tr v dung sai
- Tr s ca in tr: (Resistance [Ohm]-O) c tnh theo cng thc:
Trong :
- l in tr sut ca vt liu dy dn cn in
l - l chiu di dy dn
S- l tit din ca dy dn
- Dung sai hay sai s (Resistor Tolerance): Biu th mc chnh lch ca tr
s thc t ca in tr so vi tr s danh nh v c tnh theo %.
+ Ty theo dung sai phn chia in tr thnh 5 cp chnh xc:
Cp 005: c sai s 0,5 %
Cp 01: c sai s 1 %
Cp I: c sai s 5 %
Cp II: c sai s 10 %
Cp III: c sai s 20 %
S
l
R =
| | % 100
.
. .
d d
d d t t
R
R R
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Trang 113
b. H s nhit ca in tr - TCR
- TCR (temperature coefficient of resistance): biu th s thay
i tr s ca in tr theo nhit , c tnh nh sau:
- TCR l tr s bin i tng i tnh theo phn triu ca in tr
trn 1C (vit tt l ppm/C).
- H s nhit ca in tr c th m hoc dng ty loi vt liu:
+ Kim loi thun thng h s nhit dng.
+ Mt s hp kim nh constantin, manganin c h s in tr
nhit 0
+ Carbon, than ch c h s in tr nhit m
T TCR
R
R A = A .
10
6
C] [ppm/ .10
T
R
.
R
1
TCR
0 6
A
A
=
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Trang 114
c. Cng sut tiu tn danh nh ca in tr (P
t.t.max
)
- P
t.t.max
l cng sut in cao
nht m in tr c th chu
ng c trong iu kin bnh
thng, lm vic trong mt
thi gian di khng b hng.
- Cng sut tiu tn danh nh tiu chun cho cc in tr dy qun
nm trong khong t 1W n 10W hoc cao hn nhiu. ta nhit
pht sinh ra, yu cu din tch b mt ca in tr phi ln, do vy,
cc in tr cng sut cao u c kch thc ln.
- Cc in tr than l cc linh kin c cng sut tiu tn danh nh
thp, nm trong khong 0,125W; 0,25W; 0,5W; 1W v 2W.
] [ R.I P
2
max 2
max t.t.max
W
R
U
= =
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Trang 115
d. Tp m ca in tr
- Tp m ca in tr gm:
+ Tp m nhit (Thermal
noise): sinh ra do s
chuyn ng ca cc ht
mang in bn trong in
tr do nhit
f T R k E
RMS
A = . . . . 4
E
RMS
= the Root-Mean-Square or RMS voltage level
k = Boltzmans constant (1.3810
-23
)
T = temperature in Kelvin (Room temp = 27 C = 300 K)
R = resistance
f = Circuit bandwidth in Hz (f = f
2
-f
1
)
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Trang 116
d. Tp m ca in tr
- Trong :
+ NI: Noise Index (H s nhiu).
+ U
DC
: in p khng i t trn 2 u in tr
+ U
noise
: in p tp m dng in
+ f
1
> f
2
: khong tn s lm vic ca in tr
Mc tp m ph thuc ch yu vo loi vt liu cn in. Bt than
nn c mc tp m cao nht. Mng kim loi v dy qun c mc
tp m rt thp.
|
|
.
|
\
|
=
1
2
20 /
log 10 .
f
f
U E
NI
DC RMS
|
|
.
|
\
|
=
DC
noise
U
U
NI
10
log 20
+ Tp m dng in (Current Noise) : sinh do cc thay i bn
trong ca in tr khi c dng in chy qua n
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Trang 117
3.1.3 K hiu ca in tr trn cc s mch
in tr thng
in tr cng sut
Bin tr
0,25W
0,5W
1 W 10 W
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Trang 118
3.1.4 Cch ghi v c tham s trn thn in tr
- Cch ghi trc tip: ghi y cc tham s chnh v n v o trn thn ca
in tr, v d: 220KO 10%, 2W
- Cch ghi theo quy c: c rt nhiu cc quy c khc nhau. Xt mt s
cch quy c thng dng:
+ Quy c n gin: Khng ghi n v m, R (hoc E) = O,
M = MO, K = KO
V d: 2M=2MO, 0K47 =0,47KO = 470O, 100K = 100 KO,
220E = 220O, R47 = 0,47O
+ Quy c theo m: M ny gm cc ch s v mt ch ci ch % dung
sai. Trong cc ch s th ch s cui cng ch s s 0 cn thm vo. Cc ch
ci ch % dung sai qui c gm: F = 1 %, G = 2 %, J = 5 %, K = 10 %, M =
20 %.
XYZ = XY * 10
Z
O
V d: 103F = 10000 O 1% = 10K 1%
153G = 15000 O 2% = 15 KO 2%
4703J = 470000 O 5% = 470KO 5%
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Trang 119
+ Quy c mu:
- Loi 4 vng mu:
=>Vng 1,2 ch tr s, Vng 3 ch s s
khng thm vo, Vng 4: dung sai)
(Nu-en--Khng mu) =
- Loi 5 vch mu:
=>Vng 1,2,3 ch tr s, Vng 4 ch s
s khng thm vo, Vng 5: dung sai)
(Nu-en-en--Khng mu) =
Mu Gi tr
en 0
Nu 1
2
Cam 3
Vng 4
Lc 5
Lam 6
Tm 7
Xm 8
Trng 9
Vng kim 0,1 / 5%
Bch kim 0,001 / 10%
Khng mu - / 20%
1 2 3 4
1 2 3 4 5
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Trang 120
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Trang 121
3.1.5 in tr cao tn v mch tng ng
- Khi lm vic tn s cao in cm v in dung k sinh l ng
k, S tng ng ca in tr tn s cao nh sau:
- Tn s lm vic hiu dng ca in tr c xc nh sao cho s
sai khc gia tr khng tng ng ca n so vi gi tr in tr
danh nh khng vt qu dung sai.
- c tnh tn s ca in tr ph thuc vo cu trc, vt liu ch
to... Kch thc in tr cng nh th c tnh tn s cng tt,
in tr cao tn thng c t l kch thc l t 4:1 n 10:1
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Trang 122
3.1.6 Phn loi in tr
+ in tr c tr s c nh
+ in tr c tr s thay i
a. in tr c nh
- Thng c phn loi theo vt liu cn in
+ in tr than tng hp (than nn): cu trc t hn hp bt cacbon
(bt than ch) c ng thnh khun, c kch thc nh v gi
thnh rt r.
+ in tr than nhit gii hoc than mng (mng than tinh th).
+ in tr dy qun
+ in tr mng hp kim, mng oxit kim loi hoc in tr ming.
+ in tr cermet (gm kim loi).
- Ngoi ra cn phn loi theo kt cu u ni phc v lp rp;
phn loi theo loi v bc dng nhng mi trng khc nhau;
phn loi theo loi ng dng.
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Trang 123
3.1.6 Phn loi in tr
b. Bin tr
- Dng kim sot dng cng sut ln dng dy qun. Loi ny t gp
trong cc mch in tr.
- Chit p. Cu to ca bin tr so vi in tr c nh ch yu l c
thm mt kt cu con chy gn vi mt trc xoay iu chnh tr s
in tr. Con chy c kt cu kiu xoay (chit p xoay) hoc theo kiu
trt (chit p trt). Chit p c 3 u ra, u gia ng vi con trt
cn hai u ng vi hai u ca in tr.
a. loi kim sot dng b. loi chit p
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Trang 124
Mt s in tr c bit
- in tr nhit: Tecmixto
- in tr Varixto:
- in tr Mgm : c tr s in tr t 10
8
10
15
.
- in tr cao p: L in tr chu c in p cao t 5 KV n 20
KV.
- in tr chun: L cc in tr dng vt liu dy qun c bit c
n nh cao.
- Mng in tr: Mng in tr l mt loi vi mch tch hp c 2 hng
chn. Mt phng php ch to l dng cng ngh mng mng, trong
dung dch cht dn in c lng ng trong mt hnh dng theo
yu cu.
Tecmixto
t
0
VDR
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Trang 125
Hnh nh ca mt s loi in tr
in tr dy cun chnh xc
- Sai s nh : 0,005%
- TCR= 3ppm/
0
C
- p ng tn s tt, tn s cng hng cao, dng
nhiu trong ng dng tn s RF,
- Cng sut nh.
- Thng c dng trong cc thit b o DC
chnh xc cao, in tr chun cho cc b iu chnh
in p, mch bin i DAC.
Chun NIST (National Institute of Standards
and Technology)
- Sai s rt nh : 0,001%
- TCR= 3ppm/
0
C
- p ng tn s tt, tn s cng hng cao, dng
nhiu trong cc thit b o, kim chun.
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Trang 126
in tr dy cun cng sut ln in tr film cacbon
in tr cu ch in tr film oxit kim loi in tr l kim loi
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Trang 127
in tr cu ch in tr film oxit kim loi in tr l kim loi
in tr SMD
in tr SMD (surface
mount devices) - Loi
linh kin gn trn b
mt mch in, s dng
trong cng ngh SMT
(Surface mount
technology) # (through-
hole technology ).
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Trang 128
Potentiometers, or
"trimpots"
Carbon composition
Carbon film Metal film High Power
(wire wound; ceramic)
Surface Mount
Resistors (SMR)
Thermistor
Varistor
Light dependent
resistor (LDR)
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Trang 129
Metal film Metal Oxide Film Mng in tr Metal Film
Cement Resistors
Resistance:1ohm;
Resistance
Tolerance:+/-1%;
Power Rating:25W;
Resistor Element
Material:Thick Film;
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Trang 130
Bin tr (Variable Resistors)
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Trang 131
3. 2. T in (Capacitors)
3.2.1. nh ngha
3.2.2. Cc tham s k thut c trng ca t in
3.2.3. K hiu ca t in
3.2.4 Cch ghi v c tham s trn t in
3.2.5. S tng ng
3.2.6. Phn loi
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Trang 132
3.2.1 nh ngha
-T in l linh kin dng cha in tch. Mt t in l tng c in
tch bn cc t l thun vi hiu in th t trn n theo cng thc:
Q = C . U [culng]
-Dung lng ca t in C [F]
c
r
- hng s in mi tng i ca cht in mi
c
0
- hng s in mi tuyt i ca khng kh
hay chn khng
S - din tch hu dng ca bn cc [m
2
]
d - khong cch gia 2 bn cc [m]
- n v o C: F, F, nF, pF
d
S
U
Q
C
r
.
0
c c
= =
Bn cc
Cht in mi
V bc
Chn t
12
9
0
10 . 84 , 8
10 . 36
1

= =
t
c
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Trang 133
3.2.2 Cc tham s k thut c trng ca t in
- Tr s dung lng v dung sai
- in p lm vic
- H s nhit
- Dng in r
- S phn cc
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Trang 134
+ Tr s dung lng (C)
+ Dung sai ca t in: y l tham s ch chnh xc ca tr s
dung lng thc t so vi tr s danh nh ca n. Dung sai ca
t in c tnh theo cng thc :
+ in p lm vic: in p cc i c th cung cp cho t in
hay cn gi l "in p lm vic mt chiu, nu qu in p
ny lp cch in s b nh thng v lm hng t.
% 100 .
C
C C
d . d
d . d t . t

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Trang 135
+ H s nhit
Mi mt loi t in chu mt nh hng vi khong nhit do nh sn
xut xc nh. Khong nhit tiu chun thng t:
-20
0
C n +65
0
C; -40
0
C n +65
0
C ; -55
0
C n +125
0
C
- nh gi s thay i ca tr s in dung khi nhit thay i ngi
ta dng h s nhit TCC v tnh theo cng thc sau:
- TCC thng tnh bng n v phn triu trn 1C (vit tt ppm/C) v
n nh gi s thay i cc i ca tr s in dung theo nhit .
- Khi gi tr in dung thay i nhiu theo nhit , ngi ta dng gii
hn cc i thay i gi tr in dung trn khong nhit lm vic v
tnh bng %:
[ppm/0C] 10 .
T
C
C
1
6
A
A
= TCC
| | % 100
10
*
%
6
TCC T
C
C A
=
A
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Trang 136
d. Dng in r
- Do cht cch in t gia 2 bn cc khng l tng nn s c
mt dng in r rt b chy qua gia 2 bn cc ca t in. Tr s
dng in r ph thuc vo in tr cch in ca cht in mi.
- c trng cho dng in r c th dng tham s in tr cch in
ca t (c tr s khong vi MO v ph thuc nhiu vo nhit )
nu t c dng in r nh
- T in mng Plastic c in tr cch in cao hn 100000 MO,
cn t in in gii th dng in r c th ln ti vi A khi in
p t vo 2 bn cc ca t ch 10 Vn.
- i vi in p xoay chiu, tn hao cng sut trong t c th
hin qua h s tn hao D:
pk
th
P
P
Q
D = =
1
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Trang 137
e. S phn cc
- Cc t in in gii cc chn t thng c nh du cc tnh
dng (du +) hoc m (du -) gi l s phn cc ca t in.
Khi s dng phi u t vo mch sao cho ng cc tnh ca t.
Nh vy ch s dng loi t ny vo nhng v tr c in p lm
vic khng thay i cc tnh.
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Trang 138
3.2.3 K hiu ca t
+ +
T thng T in gii T c in dung thay i
T in ln thng c tham s in dung ghi trc tip, t
in nh thng dng m: XYZ = XY * 10
Z
pF
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Trang 139
3.2.4 Cch c v ghi tr s trn t
- Hai tham s quan trng nht thng c ghi trn thn t in l tr s in
dung (km theo dung sai sn xut) v in p lm vic (in p ln nht). C
2 cch ghi c bn:
- Ghi trc tip: cch ghi y cc tham s v n v o ca chng. Cch ny
ch dng cho cc loi t in c kch thc ln.
V d 1: Trn thn mt t mi ca c ghi: 5.000PF 20% 600V
- Cch ghi gin tip theo qui c :
+Ghi theoqui c s: (Cch ghi ny thng gp cc t Plystylen), Kiu gi
tr ghi bng s nguyn th n v tng ng l pF, nu kiu gi tr ghi bng s
thp phn th n v tng ng l F.
V d 2: Trn thn t c ghi 47/ 630: tc gi tr in dung l 47 pF, in p lm vic
mt chiu l 630 Vdc.
V d 3: Trn thn t c ghi 0.01/100: tc l gi tr in dung l 0,01 F v in p
lm vic mt chiu l 100 Vdc.
+Quyc theom: (Ging nh in tr, Cc ch ci ch dung sai qui c nh
trang bn): XYZ = XY * 10
Z
pF
123K/50V =12000 pF 10% v in p lm vic ln nht 50 Vdc
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Trang 140
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Trang 141
+ Ghi theo quy c mu:
- Loi c 4 vch mu:
Hai vch u l s c ngha thc ca n
Vch th ba l s nhn (n v pF) hoc s s 0 cn thm vo
Vch th t ch in p lm vic.
- Loi c 5 vch mu:
Ba vch mu u ging nh loi 4 vch mu
Vch mu th t ch % dung sai
Vch mu th 5 ch in p lm vic
TCC 1 1
1 2 3
2 3 2
3 4 4
4 5
+
T hnh ng T hnh ko T Tantan
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Trang 142
- Vch mu ch TCC, n v ppm/
0
C:
tm: TCC = 100
Vng: TCC = 220
en: = 0
Xanh l cy: = 330
: = 75
Xanh lam: = 430
Cam: = 150
Tm: = 750
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Trang 143
+ Cch ghi bng chm mu, s dng 3 hoc 6 chm mu, C 2 kiu ny u nh
nhau nhng kiu 6 chm mu nhiu thng tin hn nh: H s nhit, dung sai
= T Mica, in dung 1200 pF, dung sai 6%.
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Trang 144
3.2.5 S tng ng ca t
R
P
R
L
L R
S
R
S
C
C C
a. S tng ng b. S tng ng c. s tng ng
tng qut song song ni tip
L - l in cm ca u ni, dy dn ( tn s thp L ~ 0)
R
S
- l in tr ca u ni, dy dn v bn cc (R
S
thng rt nh)
R
P
- l in tr r ca cht cch in v v bc.
R
L
, R
S
- l in tr r ca cht cch in
C - l t in l tng
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Trang 145
3.2.6 Phn loi t in
- T in c tr s in dung c nh
- T in c tr s in dung thay i c.
a. T in c tr s in dung c nh:
+ T giy: cht in mi l giy, thng c tr s in dung khong t
500 pF n 50 F v in p lm vic n 600 Vdc. T giy c gi
thnh r nht so vi cc loi t c cng tr s in dung.
u im: kch thc nh, in dung ln.
Nhc im: Tn hao in mi ln, TCC ln.
+ T mng cht do: cht in mi l cht do, c in tr cch in
ln hn 100000 MO. in p lm vic cao khong 600V. Dung sai
tiu chun ca t l 2,5%; h s nhit t 60 n 150 ppm/
0
C
T mng cht do nh hn t giy nhng t hn. Gi tr in dung
ca t tiu chun nm trong khong t 5 pF n 0,47 F.
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Trang 146
+ T mi ca: cht in mi l mi ca, t mi ca tiu chun c gi tr in dung khong
t 1 pF n 0,1 F v in p lm vic cao n 3500V tu.
Nhc im: gi thnh ca t cao.
u im:Tn hao in mi nh, in tr cch in rt cao, chu c nhit cao.
+ T gm: cht in mi l gm. Mng kim loi c lng ng trn mi mt ca
mt a gm mng v dy dn ni ti mng kim loi. Tt c c bc trong mt
v cht do.
Gi tr in dung ca t gm tiu chun khong t 1 pF n 0,1 F, vi in p lm
vic mt chiu n 1000 Vdc
c im ca t gm l kch thc nh, in dung ln, c tnh n nh rt tt, c
th lm vic lu di m khng lo ho.
+ T du: cht in mi l du
T du c in dung ln, chu c in p cao
C tnh nng cch in tt, c th ch to thnh t cao p.
Kt cu n gin, d sn xut.
3.2.6 Phn loi t in
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Trang 147
+ T in gii nhm: Cu trc c bn l ging t giy. Hai l nhm
mng lm hai bn cc t cch nhau bng lp vi mng c tm cht
in phn (dung dch in phn), sau c qun li v cho vo trong
mt khi tr bng nhm bo v.
Cc t in gii nhm thng dng thng lm vic vi in p mt
chiu ln hn 400 Vdc, trong trng hp ny, in dung khng qu
100 F. in p lm vic thp v dng r tng i ln
+ T tantan: (cht in gii Tantan) y l mt loi t in gii, Bt
tantan c c c thnh dng hnh tr, sau c nhn chm vo
mt hp cha cht in phn. Dung dch in phn s thm vo cht
tantan. Khi t mt in p mt chiu ln hai chn t th mt lp oxit
mng c to thnh vng tip xc ca cht in phn v tantan.
T tantan c in p lm vic ln n 630 Vdc nhng gi tr in dung
ch khong 3,5 F.
3.2.6 Phn loi t in
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Trang 148
b. T in ctr s in dungthayi
+ Loi a dng cn gi l t xoay: T xoay c dng lm t iu chnh
thu sng trong cc my thu thanh, v.v.. T xoay c th c 1 ngn hoc
nhiu ngn. Mi ngn c cc l ng xen k, i nhau vi cc l tnh
(l gi c nh) ch to t nhm. Cht in mi c th l khng kh, mi
ca, mng cht do, gm, v.v..
+ T vi iu chnh (thng gi tt l Trimcap), c nhiu kiu. Cht in
mi cng dng nhiu loi nh khng kh, mng cht do, thu tinh hnh
ng... Trong cc loi Trimcap chuyn dng, thng gp nht l loi
cht in mi gm. thay i tr s in dung ta thay i v tr gia
hai l ng v l tnh. Khong iu chnh ca t t 1,5 pF n 3 pF,
hoc t 7 pF n 45 pF v t 20 pF n 120 pF tu theo h s nhit cn
thit.
3.2.6 Phn loi t in
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Trang 149
+ T khng cho dng in mt chiu qua nhng li dn dng in xoay
chiu, nn t thng dng cho qua tn hiu xoay chiu ng thi vn
ngn cch c dng mt chiu gia mch ny vi mch khc, gi l t
lin lc.
+ T dng trit b tn hiu khng cn thit t mt im trn mch
xung t (v d nh tp m), gi l t thot.
+ T dng lm phn t dung khng trong cc mch cng hng LC gi l
t cng hng.
+ T dng trong mch lc gi l t lc. T dng trong cc mch chia di
tn lm vic, t cng hng v.v..T dng cho mc ch ny thuc nhm
chnh xc.
+ Cc t trong nhm a dng dng lin lc, lc ngun in, thot tn
hiu ... ngoi ra t cn dng tr nng lng, nh thi...
+ Do c tnh np in v phng in, t dng to mch nh gi, mch
pht sng rng ca, mch vi phn v tch phn.
3.2.7. ng dng
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Mt s hnh nh ca T in
T ho (Electrolytic Capacitors)
T Tantan (Tantalum Capacitors)
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Mt s hnh nh ca T in
T gm( Ceramic Capacitors ) T gm nhiu tng (Multilayer
Ceramic Capacitors )
T film nha (Polystyrene Film Capacitors)
T Mica
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Mt s hnh nh ca T in
Capacitors: SDM ceramic
at top left; SMD tantalum
at bottom left; through-
hole tantalum at top right;
through-hole electrolytic
at bottom right. Major
scale divisions are cm.
Surface mount technology (SMT)
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Mt s hnh nh ca T in
Various types of capacitors.
tantalum
capacitor
Polypropylene
Capacitor
High
Voltage/power
Capacitors
Polyester
capacitor
Multilayer Chip
Ceramic Capacitor Motor Running &
Start Capacitors
Variable
Capacitor
Tuning/Air
Variable
Capacitor
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Trang 154
3.3. Cun cm (Inductor)
3.3.1. nh ngha
3.3.2 K hiu ca cun dy.
3.3.3 Cc tham s k thut c trng ca cun dy
3.3.4 Cch ghi v c tham s trn cun dy
3.3.5. Mch tng ng
3.3.6. Phn loi
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3.3.1 nh ngha
- Cun cm l phn t sinh ra hin tng t cm khi dng in
chy qua n bin thin. Khi dng in qua cun cm bin thin s
to ra t thng thay i v mt sc in t c cm ng ngay
trong cun cm hoc c th cm ng mt sc in t sang cun
cm k cn vi n.
-Mc cm ng trong mi trng hp ph thuc vo t
cm ca cun cm hoc s h cm gia hai cun cm. Cc cun
cm c cu trc c gi tr cm ng xc nh.
- Cun cm cng c th u ni tip hoc song song. Ngay c
mt on dy dn ngn nht cng c s cm ng.
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Trang 156
3.3.2.K hiu ca cun cm
L
Cun dy li Ferit
L
Cun dy li st t
L
Cun dy li khng kh
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3.3.2. Cc tham s k thut c trng ca cun cm
- t cm(L)
- H s phm cht ca cun cm(Q)
- Tn s lmvic gii hn (f
g.h.
)
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Trang 158
a. t cm (L)
Trong : S - l tit din ca cun dy (m
2
)
N - l s vng dy
l - l chiu di ca cun dy (m)
- t thm tuyt i ca vt liu li (H/ m)
=
r
.
0
- n v o: ...H, mH, H
- t thm tuyt i ca mt s loi vt liu
Chn khng: 4t x 10
-7
H/m Ferrite T38 1.26x10
-2
H/m
Khng kh: 1.257x10
-6
H/m Ferrite U M33 9.42x10
-4
H/m
Nickel 7.54x10
-4
H/m Iron 6.28x10
-3
H/m
Silicon GO steel 5.03x10
-2
H/m supermalloy 1.26 H/m
l
S
N L . .
2
=
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Trang 159
b. H s phm cht ca cun cm (Q)
- Dung sai ca t cm: y l tham s ch chnh xc ca t
cm thc t so vi tr s danh nh ca n. Dung sai c tnh theo
cng thc :
- Mt cun cm l tng khng c tn hao khi c dng in chy qua,
thc t lun tn hao l cng sut in tn hao lm nng cun dy.
Tn hao ny c biu th bi mt in tr tn hao R
S
.
- nh gi cht lng ca cun cm dng H s phm cht Q ca
cun cm: (Cun cm tn hao nh dng s tng ng ni tip,
cun cm tn hao ln dng s tng ng song song.
S S
L
th
pk
nt
R
L
R
X
P
P
D
Q
e
= = = =
1
L R
S
% 100 .
.
. .
d d
d d t t
L
L L
L
R
X
R
P
P
D
Q
p
L
P
th
pk
e
= = = =
1
//
L
R
p
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Trang 160
c. Tn s lm vic gii hn (f
g.h.
)
- Khi tn s lm vic nh b qua in dung phn tn gia cc vng dy
ca cun cm, nhng khi lm vic tn s cao in dung ny l ng
k.
- Do tn s cao cun cm tr thnh mt mch cng hng song
song. Tn s cng hng ca mch cng hng song song ny gi l
tn s cng hng ring ca cun dy f
0
.
- Nu cun dy lm vic tn s cao hn tn s cng hng ring ny
th cun dy mang dung tnh nhiu hn. Do tn s lm vic cao nht
ca cun dy phi thp hn tn s cng hng ring ca n.
LC
f f f
gh lv
t 2
1
0 max
= = <
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Trang 161
3.3.4 Cch ghi v c tham s trn cun cm
- Ghi trc tip: cch ghi y cc tham s t cm L, dung sai, loi
li cun cm Cch ny ch dng cho cc loi cun cm c kch thc
ln.
- Cch ghi gin tip theo qui c :
+ Ghi quy c theo mu: Dng cho cc cun cm nh:
- Loi 4 vch mu
Vng mu 1: ch s c ngha th nht hoc chm thp phn
Vng mu 2: ch s c ngha th hai hoc chm thp phn
Vng mu 3: ch s 0 cn thm vo, n v o l H
Vng mu 4: ch dung sai %.
1 2 3 4
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Trang 162
Mu Gi tr ca cc s Dung sai
en
Nu
Cam
Vng
Xanh l cy
Xanh lam
Tm
Xm
Trng
Bch kim
Vng kim
Khng vch mu
0
1
2
3
4
5
6
7
8
9
-
Chm thp phn
-
-
-
-
-
-
-
-
-
-
-
10%
5%
20%
Bng m mu dng cho cc cun cm
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Trang 163
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Trang 164
3.3.5 Phn loi v ng dng
- Da theo ng dng:
+ Cun cng hng cun cm dng trong cc mch cng hng
LC.
+ Cun lc cun cm dng trong cc b lc mt chiu.
+ Cun chn dng ngn cn dng cao tn, v.v..
- Da vo loi li ca cun cm:
+ Cun dy li khng kh: Loi cun dy khng li hoc cun trn
cc ct khng t tnh, thng dng l cc cun cng hng lm vic
to s cao v siu cao. Cc yu cu chnh ca cun dy khng li l:
- in cm phi n nh tn s lm vic.
- H s phm cht cao tn s lm vic.
- in dung ring nh.
- H s nhit ca in cm thp.
- Bn chc, kch thc v gi thnh phi hp l.
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Trang 165
+ Cun cm li st bi: Dng bt st nguyn cht trn vi cht dnh
kt khng t tnh l li cun cm, thng dng tn s cao v
trung tn. Cun dy li st bi c tn tht thp, c bit l tn tht
do dng in xoy ngc, v t thm thp hn nhiu so vi
loi li st t.
+ Cun cm li Ferit : thng l cc cun cm lm vic tn s
cao v trung tn. Li Ferit c nhiu hnh dng khc nhau nh:
thanh, ng, hnh ch E, ch C, hnh xuyn, hnh ni, ht u,v.v..
Dng li hnh xuyn d to in cm cao, tuy vy li d b bo
ha t khi c thnh phn mt chiu.
+ Cun cm li st t: Li ca cun cm thng hp cht st -
silic, hoc st- niken . y l cc cun cm lm vic tn s
thp. Dng dy ng c trng men cch in qun thnh
nhiu lp c cch in gia cc lp v c tm chng m.
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Trang 166
A core material with greater magnetic
permeability results in greater magnetic
field flux for any given amount of field
force (amp-turns).
Variable inductors: providing a way to
vary the number of wire turns in use
at any given time, or by varying the
core material (a sliding core that can
be moved in and out of the coil).
Fixed-value inductor: another
antique air-core unit built for
radios. The connection terminals
can be seen at the bottom, as well
as the few turns of relatively thick
wire
Inductor (of greater inductance
value), also intended for radio
applications. Its wire coil is
wound around a white ceramic
tube for greater rigidity
3.3.6 Mt s hnh nh ca cun cm
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Trang 167
SMD Wound Chip
Inductor
Ferrite Rod Inductor
Roller inductor for
FM diplexer
DC filter
choke
Inductor
Spiral inductor with N=1.5
turns, W=20m, S=10m
and R
in
=100m
(area=0.14mm
2
).
(called On-chip inductor)
3.3.6 Mt s hnh nh ca cun cm
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Trang 168
3.4. Bin p (Transformer)
3.4.1. nh ngha
3.4.2. Cc tham s k thut ca bin p
3.4.3. K hiu ca bin p
3.4.4. Phn loi v ng dng
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Trang 169
3.4.1. nh ngha
- Bin p l thit b gm hai hay nhiu cun dy ghp h cm vi nhau
bin i in p. Cun dy u vo ngun in gi l cun s cp,
cc cun dy khc u vo ti gi l cun th cp.
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Trang 170
Nguyn l hot ng ca bin p
- Hot ng da theo nguyn l
cm ng in t.
- H s t cm ca cun s cp,
th cp:
- Khi dng in I
1
bin thin to ra t thng bin thin, t thng ny lin
kt sang cun s cp v to ra in p cm ng e
L
trn cun th cp
theo h s t l gi l h s h cm M. Lng t thng lin kt gia
cun s cp sang cun th cp c nh gi bng h s ghp bin p
K.
l
S
N
2
1 1
. L =
l
S
N
2
2 2
. L =
| | H
t
e
M
L
A A
=
/ i
1 l
S
N i K K
t
N
e
L
. . . . . ;
.
1 1 1 2
2 2
A = Au = Au
A
Au
=
2 1 2 1
. . . . L L K
l
S
N N K M = =
2 1
L L
M
K =
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Trang 171
- H s ghp bin p K
- in p cun s cp v cun th cp
- Dng in s cp v dng in th cp
- Hiu sut ca bin p
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Trang 172
a. H s ghp bin p K
M - h s h cm ca bin p
L
1
v L
2
- h s t cm ca cun s cp v cun th cp tng
ng.
- Khi K = 1 l trng hp ghp l tng, khi ton b s t
thng sinh ra do cun s cp c i qua cun th cp v ngc
li.
- Trn thc t s dng, khi K ~ 1 gi l hai cun ghp cht
khi K<<1 gi l hai cun ghp lng
2 1
L L
M
K =
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Trang 173
b. in p cun s cp v cun th cp
- in p cm ng cun s cp v th cp quan h vi nhau theo t s:
- H s bin p
+ N
1
= N
2
th U
1
= U
2
ta c bin p 1 : 1
+ N
2
> N
1
th U
2
> U
1
ta c bin p tng p
+ N
2
< N
1
th U
2
< U
1
ta c bin p h p
1
2
1
2
1
2
N
N
N
N
U
U
~ = K
N
N
2
1
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Trang 174
c. Dng in s cp v dng in th cp
- Quan h gia dng in cun s cp v cun th cp theo t s:
d. Hiu sut ca bin p
- Cc bin p thc t u c tn tht, do nh gi cht lng dng
thng s hiu sut ca bin p. Hiu sut ca bin p l t s gia cng
sut ra v cng sut vo tnh theo %:
Trong P
1
- cng sut a vo cun s cp
P
2
- cng sut thu c cun th cp
P
tn tht
- Cng sut in mt mt do tn tht ca li v tn tht ca
dy cun.
- Mun gim tn hao nng lng trong li st t, dy ng v t thng r
ngi ta dng loi li lm t cc l st t mng, c qut sn cch in,
dng dy ng c tit din ln v ghp cht.
1
2
1
2
1
2
2
1
N
N
N
N
U
U
I
I
~ = = K
% 100 . % 100 .
P
P
2
2
1
2
tht tn
P P
P
+
= = q
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Trang 175
3.4.3. K hiu ca bin p
a. Bin p m tn b. Bin p ngun li st v bin p t ngu
c. Bin p cao tn khng li d. Bin p li Ferit
e. Bin p trung tn
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Trang 176
- ng dng bin i in p xoay chiu.
- Dng cch ly gia mch cc mch in, dng loi bin p c hai
cun dy s cp v th cp cch in vi nhau.
- Bin i bin i tng tr, dng bin p ghp cht
- Bin p cao tn dng truyn tn hiu c chn lc, dng loi ghp
lng.
- Tu theo ng dng c th m bin p c nhng yu cu khc nhau v

thng c phn loi theo ng dng:
+ Bin p cng hng : y l bin p trung tn hoc cao tn c li
khng kh hoc st bi hoc ferit, ghp lng v c mt t in mc
cun s cp hoc cun th cp to cng hng n. Thng thng
tn s cng hng c thay i bng cch iu chnh v tr ca li
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Trang 177
+ Bin pcp in (bin p ngun) : L bin p lm vic vi tn s 50
Hz, 60 Hz. Bin p ngun c nhim v l bin i in p vo thnh
in p v dng in ra theo yu cu v ngn cch thit b khi khi
ngun in. Cc yu cu chnh:
in cm cun s cp cao gim dng in khng ti xung gi tr
nh nht.
H s ghp K cao in p th cp t st khi c ti.
Tn tht trong li cng thp cng tt (chn vt liu
li v b dy l thp thch hp).
Kch thc bin p cng nh cng tt.
Kt cu bn ngoi c th dng:
Loi h c tm (gi thnh thp)
Loi bc kn c tm (bo v c hc tt)
Loi hn kn, du (thch hp vi kh hu nhit i, d sa cha)
Loi khun nha (thch hp vi kh hu nhit i, khng sa cha c)
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Trang 178
+Bin p mtn : l bin p c thit k lm vic di tn s m
thanh khong t 20 Hz n 20000 Hz, yu cu bin i in p khng
c gy mo dng sng trong c di tn s m thanh, dng ngn
cch in mt chiu trong mch ny vi mch khc, bin i tng
tr, o pha, v.v..
- Bin p m tn phi lm vic trn i tn s m thanh kh rng v phi
p ng nhiu mc ch khc nhau nn yu cu cao hn bin p cp
in.
+Bin pxung: Bin p xung c hai loi: loi tn hiu v loi cng sut.
Bin p xung c yu cu v di thng tn kht khe hn so vi bin p m
tn. hot ng tt c tn s thp v tn s cao (sn xung), bin
p xung cn phi c in cm s cp ln, ng thi in cm r nh v
in dung gia cc cun dy nh.
- khc phc cc yu cu i khng ny vt liu li cn c t thm
cao v kt cu hnh hc ca cun dy thch hp. Vt liu li ca bin p
xung c chn ty thuc vo di tn hot ng c th l st t hoc
ferit.
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Trang 179
CHNG 4.
IT (DIODE)
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Trang 180
4.1 Lp tip xc P-N
4.2 Cu to chung v phn loi it bn dn
4.3 it chnh lu
4.4 it n p
4.5 it bin dung Varicap
Ni dung
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Trang 181
Ion
cho
x 0 x
n0
-
x
p0
L
trng
- - - -
- - - -
- - - -
- - - -
+ + + +
+ + + +
+ + + +
+ + + +
-
-
-
-
-
-
-
-
+ +
+ +
+ +
+ +
Ion
nh
n
in
t t
do
p n
) ( log
0
x p
a
N p =
0
d
i
N
n
p
2
0
=
diff
J
t
E
a
i
N
n
n
2
0
=
diff
J
d
N n =
0
+ +
t
E
0 p
x
0 n
x
) ( log
0
x n
-Khi tip xc pn c mi c hnh
thnh, do s chnh lch nng nn s c
s khuch tn in t v l trng qua b
mt tip xc v chng ti hp vi nhau.
- Min ln cn mt tip xc mt c tnh
trung ha v in, bn bn dn n tch in
+, bn bn dn p tch in , to thnh
min in tch khng gian v hnh thnh
mt in trng ni E
t
- E
t
li lm tng s cun ca cc ht dn
thiu s ca 2 lp bn dn qua tip gip to
ra dng in tri.
- Chuyn tip PN t trng thi cn bng
khi dng khuch tn J
diff
bng dng tri
J
driff
.
4.1.1. Chuyn tip PN trng thi cn bng nhit
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Trang 182
x 0 x
n0
-x
p0
- - - -
- - - -
- - - -
- - - -
+ + + +
+ + + +
+ + + +
+ + + +
-
-
-
-
-
-
-
-
+ +
+ +
+ +
+ +
p n
Vy trong tip gip PN hnh thnh 3
vng:
- 1 vng in tch khng gian
- 2 vng bn dn n, p cn trung ha
-Xc nh n
0
(x), p
0
(x), (x), E(x), v
|(x)?
- n gin hn ta xp x chuyn
tip nh sau:
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Trang 183
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Trang 184
ung xp x
ng chnh xc
( )
<
< <
< <
<
=
x x
x x qN
x x qN
x x
x
n
n d
p a
p
0
0
0
0
0
0
0
0
+Mt in tchkhnggian:
(x) = q[N
d
(x) n
0
(x)+ p
0
(x)-N
a
(x)]
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Trang 185
+in trng trongchuyn tip PN:
( ) ( ) ( )
}
=
2
1
1
1 2
x
x
s
x x E x E
c
( )
<
< <
< <
<
=
x x
x x qN
x x qN
x x
x
n
n d
p a
p
0
0
0
0
0
0
0
0
( )
( )
( )
<
< <
< < +
<
=
x x khi
x x khi x x
qN
x x khi x x
qN
x x khi
x E
n
n n
s
d
p p
s
a
p
0
0 0
0 0
0
0
0
0
0
c
c
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Trang 186
+in th tnh in trongtip gipPN
- Nh xc nh phn trc, theo quan h Boltzman, in th tnh
in trong bn dn n, p l:
- Trong vng bn dn p cn trung ha:
- Trong vng bn dn n cn trung ha:
?
?
|
B
Hiu in th tip xc trong chuyn
tip PN (Hng ro th nng).
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Trang 187
- Xc nh in th tnh in trong
vng chuyn tip PN (xp x
chuyn tip)?
( )
( )
( )
<
< <
< < + +
<
=
x x khi
x x khi x x
qN
x x khi x x
qN
x x khi
x
n n
n n
s
d
n
p p
s
a
p
p p
0
0
2
0
0
2
0
0
0
2
0
2
|
c
|
c
|
|
|
( )
( )
( )
< <
< < +
=
0 0
0 0
0
0
n n
s
d
p p
s
a
x x khi x x
qN
x x khi x x
qN
x E
c
c
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Trang 188
+ Xc nh rng ca chuyn tip PN: x
p0
v x
n0
=?
- Trong c vng chuyn tip PN c tnh trung ha v in:
- in th |
B
(x) cng lin tc ti x=0 do :
- Gii h 2 PT trn ta c:
- rng ca vng in tch khng gian:
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Trang 189
- iu g s xy ra i vi trng tnh in trong chuyn tip PN khi c
in p ngoi t qua 2 u vo?
V > 0 phn cc thun
V < 0 phn cc ngc
4.1.2. Chuyn tip PN trng thi phn cc
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Trang 190
- Khi c in p phn cc t vo 2 u ca tip gip PN, phn b in
th trong tip gip thay i ?
- in p ri trn 5 vng nh th no?
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Trang 191
- in p ngoi ch yu c t nn vng chuyn tip PN (SCR).
- Hiu in th t ln chuyn tip PN gi l hng ro in th:
= |
B
:Trong iu kin cn bng nhit
= |
B
V < |
B
:Trong trng hp phn cc thun
= |
B
V > |
B
:Trong trng hp phn cc ngc
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Trang 192
+ Phn cc thun:
-in th tip xc trong gim.
- in trng tip xc gim.
- rng vng in tch
khng gian gim
+ Phn cc ngc:
- in th tip xc trong tng.
- in trng tip xc tng.
- rng vng in tch
khng gian tng.
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Trang 193
Chuyn ng ca cc ht ti in khi c in p phn cc:
- Khi t in p phn cc thun:
- Cn bng dng in b ph v
+ Phn ln cc ht dn a s c nng lng ln d dng khuch tn
qua CT P-N. Kt qu l dng in qua CT P-N tng ln v y l thnh
phn dng in khuch tn. Dng in chy qua chy qua tip xc P-N
khi n phn cc thun gi l dng in thun I
th
.
+ Nhng ht dn a s sau khi vt qua lp tip xc P-N vo cc phn
bn dn P v N th chng tr thnh cc ht dn thiu s ca cc cht
bn dn ny, nh vy c hin tng phun" cc ht dn thiu s qua
vng in tch khng gian.
+ Khi tng in p thun ln, tip xc P-N c phn cc thun cng
mnh, hiu in th tip xc cng gim, hng ro th nng cng thp
xung, cc ht dn a s khuch tn qua tip xc P-N cng nhiu nn
dng in thun cng tng v n tng theo qui lut hm s m vi in
p ngoi.
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Trang 194
- Khi t in p phn cc ngc
- Cn bng dng in b ph v
- Do in trng ca lp tip xc tng ln s thc y qu trnh chuyn
ng tri ca cc ht dn thiu s qua chuyn tip PN, to nn dng
in tri c chiu t bn dn N sang bn dn P v c gi l dng
in ngc I
ngc
.
- Nu ta tng in p ngc ln, hiu in th tip xc cng tng ln lm
cho dng in ngc tng ln. nhng do nng cc ht dn thiu s
rt nh, nn dng in ngc nhanh chng t gi tr bo ha no v
th n cn c gi l dng in ngc bo ha I
S
c gi tr rt nh.
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Trang 195
- Minh ha dng dch chuyn ca cc ht ti in qua chuyn tip PN
+ Phn cc thun + Phn cc ngc
- Nh vy chuyn tip PN c tnh cht chnh lu dng in, cho php
dng in qua theo mt chiu nht nh.
Dng khch tn l trng
Dng khch tn in t
Dng tri in t
Dng tri l trng
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Trang 196
Phn b di nng lng ca tip gip PN
- Phn b di nng lng ca tip gip PN trong iu kin cn bng nhit:
q. |
B
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Trang 197
4.1.3. c tuyn V-A ca tip gip PN
- xc nh c phng trnh c tuyn V-A ca tip gip PN cn
thc hin tnh ton theo cc bc sau (B qua s ti hp ca in t
v l trng chuyn tip):
+ Tnh mt ht dn thiu s ti bin ca vng in tch khng gian.
+ Tnh ton dng khuch tn ht thiu s trong mi vng bn dn cn
trung ha: I
n
, I
p,
vi gi thit hm phn b ca cc ht thiu s ca cc
min l tuyt tnh.
+ Tnh tng dng khuyn tn in t v l trng: I = I
n
+ I
p
1. Tnh mt ht dn thiu s ti bin ca vng in tch khng
gian SCR:
- Trong iu kin cn bng nhit v
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Trang 198
P - + N
p
0
n
0
0
-x
p0
-W
p
W
n
x
n0
a
N p =
0
d
i
N
n
p
2
0
=
a
i
N
n
n
2
0
=
d
N n =
0
x
Phn b ca in t v l trng trong tip gip PN
Trong iu kin cn bng nhit
Trong iu kin phn cc thun
P - + N
p n
0
-x
p
-W
p
W
n
x
n
a
N p =
0
d
i
N
n
p
2
0
=
a
i
N
n
n
2
0
=
d
N n =
0
x
V
( )
p
x n
( )
n
x p
Gi s tuyn tnh
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Trang 199
- Nhng v iu ny c ngha l xp
x s phun ht dn thiu s qua chuyn tip mc thp.
- Thay vo ta c:
- Thay: vo 2 biu thc trn, rt gn :
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Trang 200
2. Tnh ton dng khuch tn in t
trong vng in tch khng gian pha p:
- p dng iu kin bin:
- Gii thit n(x) thay i tuyn tnh th vit c phng trnh ca n(x)
v thay vo phng trnh (*)
- Tnh c
(*)
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Trang 201
Tng t:
3. Dng tng cng
I
0
: Dng bo ha
- Dng in tng cng trong it:
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Trang 202
I
0
: Dng bo ha ngc
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Trang 203
- Hiu chnh phng trnh c tuyn khi tnh n s ti hp ca in t
v l trng ti chuyn tip PN, phng trnh c tuyn ca tip gip PN
nh sau:
- Trong : I
o
- dng bo ha; V
th
in p nhit; q - h s pht x:
+ q=12 i vi tip gip PN dng Si.
+ q~1 i vi tip gip PN dng Ge, v GaAs
+ q cng ph thuc vo rng ca chuyn tip PN v nh vy cng
ph thuc vo in p lm vic ca tip gip PN
+ Thng thng khng c ghi ch th thng chn q=1
|
.
|
\
|
= 1
0
th
V
V
e I I
q
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Trang 204
4.1.4. C ch nh thng trong chuyn tip PN
- Dng phn cc ngc rt nh, nhng khi in p ngc t trn chuyn tip
PN tng vt qua mt gi tr nht nh dng ngc s tng t ngt l
hin tng nh thng, hin tng ny c th lm hng linh kin nhng c
mt s loi linh kin hot ng da trn c ch ny.
- Hai c ch nh thng chuyn tip PN l:
+ C ch thc l: Khi in p ngc tng, in trng trong min in tch
khng gian tng, ht dn thiu s b cun qua in trng c ng nng ngy
cng ln, khi chuyn ng chng va p vi cc nguyn t lm bn ra in t
lp ngoi ca chng, s in t t do mi pht sinh do va chm ny cng
c in trng mnh gia tc, chng tip tc p vo cc NT mi lm bn ra
in t t do. Hin tng ny xy ra lin tc v nhanh, khin s ht dn trong
bn dn tng t ngt, in tr sut chuyn tip gim i, dng qua chuyn tip
PN tng t ngt.
+ C ch xuyn hm: Khi in trng ngc tng ln, cn cung cp nng
lng cho cc in t lp ngoi cng ca NT bn dn, nu cc in t ny c
nng lng ln chng tch ra khi NT to thnh in t t do, NT b ion
ha. Nu in trng ngc ln hin tng ion ha xy ra nhiu dn n
s lng ht dn trong bn dn tng t ngt, lm cho dng ngc tng nhanh.
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- Trong thc t 2 c ch nh thng xy ra rt phc tp, kh phn bit,
+ nh thng xuyn hm xy ra gn nh tc thi v do in trng trn
min in tch khng gian quyt nh, khng ph thuc vo din tch
min in tch khng gian.
+ nh thng thc l i hi phi c qu trnh gia tc cho cc ht dn
chng c ng nng ln, ph thuc nhiu vo rng ca min in
tch khng gian.
- Bng thc nghim ngi ta phn bit c, i vi bn dn Si, chuyn
tip PN b nh thng in p < 4V ch yu l do c ch xuyn hm,
nu >6V th ch yu l do c ch thc l, cn li l do c 2 c ch ny
gy ra.
- in p nh thng ph thuc vo loi bn dn, gim tuyn tnh theo
nng pha tp, in p nh thng ca chuyn tip PN c nng
pha tp tuyn tnh cao hn chuyn tip PN c phn b t bin, nu
chuyn tip c s pha tp tuyn tnh bin i cng chm th in p
nh thng cng cao
4.1.4. C ch nh thng trong chuyn tip PN
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Trang 206
4.2. it - 4.2.1. Gii thiu chung
- it (diode) l t nghp mang ngha "hai in cc (vi di l hai, v
ode bt ngun t electrode, c ngha l in cc) l cc linh kin in
t tch cc v phi tuyn cho php dng in i qua n theo mt chiu
m khng theo chiu ngc li.
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Trang 207
- it bn dn c cu to t mt chuyn tip p-n
- Nguyn l lm vic da trn cc hiu ng vt l ca chuyn tip PN:
+ it chnh lu: Da vo hiu ng chnh lu ca chuyn tip PN
+ it n p Zener: Da vo hiu ng nh thng thc l v nh thng Zener
+ it ngc, it tunen: Da vo hiu ng xuyn hm trn chuyn tip PN
pha tp nhiu
+ it Varicap: a vo hiu ng in dung ca chuyn tip PN thay i khi
in p phn cc ngc thay i
- Nguyn l lm vic, c tuyn V-A, ng dng ca mi loi it l rt khc nhau
p n
p-type Si
n-type Si
SiO
2
SiO
2
metal
metal
I
D
+
V
D
I
D
+ V
D

A K
4.2.1. Gii thiu chung
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Trang 208
4.2.2 Cu to ca it chnh lu v k hiu trong s mch
A K
A K
Vng chuyn tip
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Trang 209
4.2.3. Nguyn l hot ng ca it
U
AK
U
AK
Vng chuyn tip hp
Vng chuyn tip rng
Phn cc thun (U
AK
>0): thc y cc e
-
trong bn dn n v cc l trng
trong bn dn p ti hp vi cc ion gn ng bao ca vng chuyn tip v
lm gim rng ca vng chuyn tip. Thng thng U
AK
< 1V
Phn cc ngc (U
AK
<0): s lng cc ion dng trong vng chuyn
tip ca bn dn n tng ln do mt s lng ln cc e
-
t do b ko v cc
dng ca in p cung cp. Tng t, s lng cc ion m trong vng
chuyn tip ca bn dn p tng ln. Kt qu l vng chuyn tip c m
rng. Dng in tn ti trong iu kin phn cc ngc gi l dng bo
ho ngc I
s
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Trang 210
4.2.4. c tuyn Vn-Ampe ca it bn dn
+ U
T
- in p ngng ca
it (in p thng
thun)
U
T
= 0,5V-0,8V(it Si)
0,2-0,4V(it Ge)
+ U
th
- in p nhit
U
D
=U
A
K
U
t
U
T
i
D
=i
t
h
i
D
= i
ng
( ) 1
D
th
U
U
D AK S
I f U I e
q
| |
= =
|
\ .
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Trang 211
4.2.5. Tham s c bn ca it
a. in tr mt chiu haycngi lin tr tnh R
0
- L in tr ca it khi lm vic ch ngun mt chiu hoc ti
ch tnh (ti im lm vic tnh M trn c tuyn).
b. in tr ng R
i
:
Do ch phn cc thun I
M
>> I
0
v >>1
c.H s chnh lu: k
- L thng s c trng phi tuyn
ca it v c xc nh bng biu thc sau:
1
M
M
cot
I
U
u g R
o
= =
M
i
R
dI
dU
=
0thuan
0nguoc
0
th
R
R
I
I
= = k
i
D
M
u
2 u
1
I
M
U
M
U
D
0 M
T
V
U
0
T
I + I
V
e I
V
T
q q
q
= =
i
R
T
V
U
q
M
T
I
V q
=
i
R
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Trang 212
d. in dungchuyn tip C
0
- in dung chuyn tip PN khi phn cc ngc:
e. in dungkhuch tn
- Khi t in p thun ln tip xc P-N, cc ht dn a s khuch tn
qua tip xc P-N. Qu trnh "chch" cc ht dn thiu s v mt cc
ht thiu s c chch vo gim theo qui lut hm m vi khong
cch. S thay i t l mt cc in tch "chch" vo vi in p t
ln tip xc P-N s to ra s gia tng in dung. gia tng in dung
ny gi l in dung khuch tn C
k.t.
, v c xc nh bng cng thc:
f. in pngc cc i chophp: U
ngc max
- L gi tr in p ngc ln nht c th t ln it m n vn lm vic
bnh thng. Thng thng tr s ny c chn khong 0,8U
.t.
- in p ngc cc i U
ng. ma x
ph thuc vo cu to ca it v n
nm trong khong vi V n 10 ngn V.
k.t.n k.t.P
T
np n
T
Pn p
.
C C
V
I
V
I
+ = + =
q
t
q
t
t k
C
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Trang 213
g. Khong nhit lmvic:
- L khong nhit m bo it lm vic bnh thng. Tham s ny
quan h vi cng sut tiu tn cho php ca it.
P
ttmax
= I
max
U
AKmax
Trong : t
0
maxP-N
- nhit cc i cho php ca tip xc P-N
t
0
0
- nhit mi trng
- it Ge : - 60
0
C n +85
0
C
- it Si : - 60
0
C n +150
0
C.
C 20 t
t t
. P P
0
N - maxP
0
0
0
N - maxP
0
C) max(20
tmax
t
0
=
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Trang 214
4.2.6. Tng quan v cc m hnh tng ng ca cu kin bn dn
- Mt mch in t thng gm nhiu cu kin tch cc v cu kin th ng.
c tnh in p- dng in ca cc cu kin tuyn tnh thng c xc nh
bi cc quan h kh n gin, trong khi vi cu kin phi tuyn th c tnh
in p dng in li kh phc tp.
- Nh vy phn tch v thit k mch d dng hn, cu kin phi tuyn thng
c thay th bi m hnh mch tng ng c cng p ng v c tnh vi
cu kin thc.
- M hnh mch tng ng ca cc cu kin bn dn phi tuyn c ghp t
cc cu kin th ng tuyn tnh, cc ngun dng v ngun p khng i hoc
c iu khin trongmt iu kin lmvic no ca cu kin phi tuyn.
- M hnh mch tng ng thng c xy dng da vo cc phng trnh,
cc cng thc c bn miu t hot ng cng nh c tnh ca cu kin.
- M hnh mch tng ng rt hu ch xy dng cc phn mm phn tch,
m phng mch in.
- Mt m hnh ni ting dng trong phn mm thit k mch in t v vi mch
l m hnh SPICE
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Trang 215
- C nhiu m hnh tng ng cho mi cu kin tch cc ty thuc vo
ng dng v cc iu kin tng ng ca thit b, ngoi ra cn ph thuc c
vo yu cu tc tnh ton, chnh xc
- Cc loi m hnh mch tng ng chnh, phn loi theo ln tn hiu
lm vic trong cu kin:
+ M hnh mch tng ng mt chiu: Dng tnh ton cho phn
cc mt chiu v ng dng tn s rt thp.
+ M hnh mch tng tng tn hiu ln: Dng cho cc ng dng dng
hoc in p lm vic c bin ln.
+ M hnh mch tng ng tn hiu nh: Dng cho cc ng dng
dng hoc in p lm vic c bin nh, thay i rt t quanh im lm
vic 1 chiu.
- Ty thuc vo tn s lm vic m cn s dng: M hnh mch tng ng
tn hiu nh tn s cao, tn s thp; M hnh mch tng ng tn hiu
ln tn s cao, tn s thp, m hnh tng ng hn hp
4.2.6. Tng quan v cc m hnh tng ng ca cu kin bn dn
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Trang 216
Cc m hnh tng ng ca it phn cc thun
1. S mt khain t trng thi ng: it lm vic in
p ln, tn s nh. in p phn cc thun c th b qua v U
T
=
0,6V cho it Si, v U
T
= 0,2V cho it Ge l qu nh. c tuyn
Vn- Ampe lc ny coi nh trng hp ngn mch.
c tuyn Vn-Ampe l ng thng trng vi trc I.
I
I I
A K A K
U = U
T
V
T
~ 0
0 U
AK
4.2.7. Cc m hnh tng ng ca it
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Trang 217
2. S mt ngun pltng :
I
I + -
A K A K
U
T
= 0,7V
U = U
T
U
T
= 0,7V U
AK
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Trang 218
3. S mt ngun in pthc : Trong trng hp ny it c coi
nh mt ngun in p thc gm c ngun in p v ni tr ca n
chnh l R
T
(in tr trong ca it v n l in tr thun). .
M
M
D
D
I
U
I
U
T
T
U
R

=
A
A
=
I
I R
T
I
M
M
U = U
T
U
T
U
T
U
M
U
AK
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Trang 219
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Cc m hnh tng ng ca it phn cc ngc
- S mt kha trng thi h
- S mt ngun dngltng
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Trang 221
Cc m hnh tng ng xoay chiu tn hiu nh
a. S mt in tr ng R
i
ch tn hiu nh tn s thp: Trong
trng hp ny it lun phn cc thun, i vi tn hiu xoay chiu
bin nh p ng ca it c coi nh mt phn t tuyn tnh:
i
R + R
e
i i
R i R u = =
M
i
R
dI
dU
=
0 M
T
V
U
0
T
I + I
V
e I
V
T
q q
q
= =
i
R
M
T
I
V q
~
i
R
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Trang 222
Cc m hnh tng ng xoay chiu tn hiu nh
b. S tng ng ch tn hiu nh tn s cao: ch ny
it c coi nh mt in tr thun R
i
mc song song vi mt in dung
khuch tn C
k.t.
. C
k.t.
xut hin trong khong thi gian t l khong thi
gian lch pha gia i v u. C
k.t.
l in dung khuch tn ca tip xc P-N
v c xc nh:
i
.
R
t
=
t k
C
C
k.t
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Trang 223
c. S mt in dung chuyn tip ch tn hiu nh (Phn cc
ngc)
n
1
nguoc
0
V
C
=
tx
C
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Trang 224
4.2.8 Phn loi it (1)
it chnh lu: it chnh lu s dng tnh dn in mt chiu chnh lu
dng in xoay chiu thnh mt chiu.
it xung: ch xung, it c s dng nh kha in t gm c hai
trng thi: "dn" khi in tr ca it rt nh v "kha" khi in tr ca n rt
ln. Yu cu thi gian chuyn t trng thi ny sang trng thi khc phi tht
nhanh. Thi gian chuyn trng thi xc nh tc hot ng ca it v do
xc nh tc lm vic ca thit b.
Cc it xung c cc loi it hp kim, it mza, it Stky. Trong it
Stky c dng rng ri nht. it Stky s dng tip xc bn dn - kim
loi. Trong it Stky khng c qu trnh np hoc x in tch trong min
nn. Do tc lm vic ch yu ca it Stky ch ph thuc vo in
dung ro th ca tip xc P- N rt nh. Thi gian phc hi chc nng ngt ca
it Stky c th t ti 100psec. in p phn cc thun cho it Stky
khong U
D
= 0,4V, tn s lm vic cao n 100 GHz.
A K A K
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Trang 225
it n p: Ngi ta s dng ch nh thng v in ca chuyn tip
P-N n nh in p. it n p c ch to t bn dn Silc v n
bo m c c tnh k thut cn thit.VD: it Zener
it bin dung(varicap): L loi it bn dn c s dng nh mt t
in c tr s in dung iu khin c bng in p. Nguyn l lm
vic ca it bin dung l da vo s ph thuc ca in dung ro th
ca tip xc P-N vi in p ngc t vo n.
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Trang 226
it tunen (hayit xuyn hm): it c ch to t cht bn dn c
nng tp cht rt cao thng thng n = (10
19
10
23
)/cm
3
. Loi it
ny c kh nng dn in c chiu thun v chiu ngc.
it caotn:Dng x l cc tn hiu cao tn nh:
- it tch sng.
- it trn sng.
- it iu bin
Cc it cao tn thng l loi it tip im.
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Trang 227
Mt s hnh nh ca it
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Mt s hnh nh ca it
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Trang 229
4.2.9. Mt s ng dng ca it
- it c s dng trong nhiu ng dng khc nhau. V d mt s
ng dng n gin nh sau:
+ Mch chnh lu in p xoay chiu
+ Mch nhn i in p
+ Mch ghim v mch hn bin
+ Mch n p
+ Mch tch sng
+ Mch logic
..
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Trang 230
Mch chnh lu
S khi ca khi ngun mt chiu
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Mch chnh lu na chu k
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Mch chnh lu na chu k
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Mch chnh ton sng
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Cu chnh lu ton sng
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Mch chnh lu c chu k
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Trang 236
Mch chnh lu khi c t lc
- Dng sng ca in p v dng
in ng vi CR >> T.
- Gi s it l l tng.
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Trang 237
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Mch nhn i in p
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- Mch ghim (dch mc) v mch hn ch (ghim nh)
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Mch hn bin
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- Mch hn bin
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- Mch gii hn bin 2 pha
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4.2.10 it Zener (1)
Vng Zener c dng thit k it Zener
in p Zener (V
Z
): l in p phn cc ngc m ti dng in c xu
hng tng t bin trong khi in p tng khng ng k.
in p Zener rt nhy cm i vi nhit lm vic.
V
Z
-
in p Zener danh nh 25
0
C
T
0
- nhit phng (25
0
C)
T
1
- nhit mi
T
C
- hng s nhit , thng thng 25
0
C : T
C
= +0,072 %/
0
C
VD: cho mt it Zener c V
Z
=10V nhit phng, hy tnh in p Zener mi
ca it khi nhit tng ln n 100
0
C
0
Z
1 0
/
.100%/
Z
C
V V
T C
T T
A
=
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Trang 245
Cc c tnh ca it Zener vi m hnh tng ng mi vng
+
-
+
-
V
Z
+
-
+
-
0,7 V
+
-
4.2.10 it Zener (2)
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Trang 246
6.8 V, 10mA
0.5W, 6.8-V, 70mA
Vz = Vzo + r
Z
I
z
Vz > Vzo
4.2.10 it Zener (3)
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Trang 247
- Mch hn ch dng it Zener
(Zener Limiter):
Mt it Zener c th hn ch 1 pha
ca mt sng sin ti in p Zener
(V
Z
), trong khi ghim pha kia ti
gn gi tr 0.
Vi hai it Zener mc ngc nhau
(hv), sng sin c th b hn ch c 2
pha ti in p Zener
R
R
L
- Mch n p dng it Zener
(Zener Regulator):
in p ngc khng i (V
Z
) ca it
Zener c dng n nh in p ra
chng li s thay i ca in p u
vo t mt ngun in p thay i hay
s thay i ca in tr ti. I chy qua
it Zener s thay i gi cho in
p nm trong gii hn ca ngng ca
vng lm vic ca it Zener
4.2.10 it Zener (4)
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Trang 248
CHNG 5.
TRANSISTOR LNG CC - BJT
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Trang 249
Ni dung
5.1. Cu to v k hiu ca lng cc trong cc s mch
5.1.1. Cu to BJT loi pnp, npn,
5.1.2. Nguyn l hot ng ca BJT
5.1.3. M hnh Ebers-Moll
5.2. Cc cch mc BJT v cc h c tuyn tng ng
5.3. Phn cc cho BJT
5.4. Ch chuyn mch
5.5.Cc m hnh tng ng ca BJT.
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Trang 250
Gii thiu chung v Transistor
- Transistor = (Transfer Resistor)
- Transistor l mt linh kin bn dn thng
c s dng nh mt thit b khuych i
hoc mt kha in t. Transistor l khi n
v c bn xy dng nn cu trc mch my
tnh in t v tt c cc thit b in t hin
i khc. V p ng nhanh v chnh xc nn
cc Transistor c s dng trong nhiu ng
dng tng t v s, nh khuych i, ng
ct, iu chnh in p, iu khin tn hiu, v
to dao ng. Transistor cng thng c kt
hp thnh mch tch hp (IC),c th tch hp
ti mt t Transistor trn mt din tch nh.
Chng 5: BJT
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Trang 251
5.1.1. Cu to BJT loi pnp, npn
- Cu to Transistor gm c 2 tip gip PN do 3 lp tng ng 3 min pht,
gc, gp v c 3 in cc ni ti 3 min: Cc Pht-E (Emitter), Cc Gc -
B (Base), Cc Gp-C(Collector). BJT thun c 3 min PNP, BJT ngc c
3 min NPN
- Chuyn tip PN gia min E-B l chuyn tip Emitter T
E
, gia B-C l
chuyn tip collector T
C
Base (P)
Collector (N)
Emitter (N+)
Base (N)
Emitter (P+)
Collector (P)
E
I
B
I
C
I
EB
V
+
EC
V
+
C
I
E
I
BE
V
+
CE
V
+
B
I
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Trang 252
Transistor npn
- Nng pha tp ca min E l kh cao, Min B c nng va phi kch
thc kh mng, min C c nng pha tp thp. Min pht c kh nng pht
x cc ht dn sang min gc B, min gp c kh nng thu nhn tt c cc ht
dn c pht x t min pht E qua min gc B ti.
- Min C thng c nui trn phin bn dn , c lp bn dn vi su c
nng cao (Buried layer n++) gim tr s in tr ni tip.
- rng ca min B nh hn di khuch tn trung bnh rt nhiu
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Trang 253
K hiu trn s v cc dng
ng v khc nhau ca BJT
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Trang 254
t tn v k hiu cho BJT
- BJT thng c k hiu l A..., B..., C..., D... V d A564, B733,
C828, D1555 trong cc Transistor k hiu l A v B l
Transistor thun PNP cn k hiu l C v D l Transistor ngc
NPN. cc Transistor A v C thng c cng xut nh v tn s lm
vic cao cn cc Transistor B v D thng c cng xut ln v tn
s lm vic thp hn.
- Transistor do M sn xut. thng k hiu l 2N... v d 2N3055,
2N4073 vv...
- Transistor do Trung quc sn xut : Bt u bng s 3, tip theo l
hai ch ci. Ch ci thc nht cho bit loi bng : Ch A v B l
BJT thun , ch C v D l BJT ngc, ch th hai cho bit c
im : X v P l BJT m tn, A v G l BJT cao tn. Cc ch s
sau ch th t sn phm. Th d : 3CP25 , 3AP20 vv..
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Trang 255
- trng thi cn bng nhit, dng in qua cc cc = 0.
- Mun cho Transistor lm vic ta phi cung cp mt in p mt chiu thch
hp cho cc chn cc. Tu theo in p t vo cc cc m Transistor lm
vic cc ch khc nhau:
+ Ch ngt: Hai tip gip PN u phn cc ngc. Transistor c in
tr rt ln v dng in qua cc cc rt nh.
+ Ch dn boha: C hai tip gip PN u phn cc thun. Transistor
c in tr rt nh v dng in qua n l rt ln.
+ Ch tch cc: Tip gip BE phn cc thun, tip gip BC phn cc
ngc, Transistor lm vic nh mt phn t tch cc, c kh nng khuch
i, pht tn hiu... y l ch thng dng nht ca Transistor.
+Ch tch cc o (Ch o): Tip gip BE phn cc ngc, tip
gip BC phn cc thun, y l ch khng mong mun
- C hai loi Transistor pnp v npn u c nguyn l lm vic ging ht nhau,
ch c chiu ngun in cung cp l ngc du nhau. Ch cn xt vi BJT
npn, vi loi BJT pnp tng t.
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Trang 256
- ch ngt v ch dn bo ha, BJT lm vic nh mt phn t
tuyn tnh trong mch in. Trong BJT khng c qu trnh iu khin
dng in hay in p. Transistor lm vic ch ny nh mt kha
in t v n c s dng trong cc mch xung, cc mch logic.
- Cc vng lm vic ca BJT:
V
BE
V
BC
Tch cc
Tch cc
o
Bo ha
Ngt
BJT - npn
V
EB
V
CB
Tch cc
Tch cc
o
Bo ha
Ngt
BJT - pnp
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Trang 257
a. BJT lm vic trong ch tch cc (Forward Active)
n p n
E B C
V
BE
V
BC
T
E
T
C
p n p
E B C
V
BE
V
BC
T
E
T
C
-Tip gip BE phn
cc thun.
- Tip gip BC phn
cc ngc.
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Trang 258
- T
E
phn cc thun nn ht dn a s l in t t min E c khuch tn sang min
B qua chuyn tip T
E
, tr thnh ht dn thiu s, do s chnh lch nng chng tip
tc khuch tn n min chuyn tip T
C,
ti y n c cun sang min C (v in
trng ca tip gip T
C
c tc dng cun ht thiu s).
-Ht dn a s l l trng ti min B cng khuch tn ngc li min E nhng khng
ng k so vi dng khuch tn in t do nng l trng min B t hn rt nhiu
(v nng pha tp min B t hn nhiu)
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Trang 259
- Hiu sut ca cc pht: - l t s gia thnh phn dng in ca ht a s
vi dng in cc pht:
- H s chuyn di:
- H s khuch i dng in cc pht tnh : o
F
(o
0
) hay cn gi l h s
truyn t dng in cc pht :
- H s ti hp:
995 , 0 98 , 0
I I
I
I
I
:
nE pE
nE
E
nE
~
+
= = BJTnpn
|* =
Dng in do cc ht dn k /tn qua T
E
n c tip xc T
C
Dng in ca cc ht dn c k/ tn qua tip xc T
E
995 , 0 98 , 0
I
I
:
nE
nC
*
= = | BJTnpn
| o o
*
E
nE
nE
nC
E
nC
0
I
I
I
I
I
I
= = = =
F
nE PE PE nE
nE
I I I I
I
/ 1
1
+
=
+
=
R nE
nE
pE R nE
pE nE
I I
I
I I I
I I
+
~
+ +
+
= o
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Trang 260
- Dng in I
B
ch yu gm: dng bo ha ngc ca tip gip T
C
, thnh
phn dng phun cc ht thiu s qua tip gip T
E
v cc thnh phn dng
in do hin tng ti hp trong lp tip xc pht v trong min gc to
nn.
I
B
=I
R
+ I
pE
-I
CB0
= I
nE
-I
nC
I
B
=I
pE
- I
nE
+I
nC
-I
CB0
- Quan h gia 3 thnh phn dng in trong BJT trong ch 1 chiu:
I
C
= I
nC
+ I
CBo
I
C
=o
0
I
E
+ I
CBo
I
B
= (1 - o
0
)I
E
I
CB0
I
E
= I
C
+ I
B
Thc t dng h s khuch i dng in cc pht tn hiu nh hay cn gi
l h s truyn t vi phn dng in cc pht o :
E
C
I
I
c
c
= o
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Trang 261
- H s khuch i dng Emitter chung (tnh) mt chiu |
F
(|
0
) :
- H s khuch i dng Emitter chung tn hiu nh:
- M hnh kch thc
n gin ca BJT npn

1
m ,
0 0
F
F
C B E
B
C
I I I
I
I
o
o
| |
= + = =
o
o
|
=
c
c
=
1
B
C
I
I
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Trang 262
-Tm li trong ch lm vic tch cc, tip gip BE phn cc thun,
tip gip BC phn cc ngc.
- Quan h gia cc dng in trong BJT-npn l:
- Trong ch tnh (ch 1 chiu) v b qua dng bo ha ngc :
- Nu tnh n dng bo ha ngc:
I
C
=o
0
I
E
+ I
CBo
I
B
= (1 - o
0
)I
E
I
CB0
-Trong ch ng:
I
E
=I
B
+I
C
B 0
I
1
F
F
B B F C
I I I
o
o
| |
= = =
o
o
|
=
c
c
=
1
B
C
I
I
E E F C
I I I
0
o o = =
E
C
I
I
c
c
= o
C
I
B
I
E
I
0 n pB E
S
B
qD n A
I
W
| |
=
|
\ .
B aB p
E dE n
F
W N D
W N D
= |
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Trang 263
b. BJT lm vic trong ch o (Reverse)
-Tip gip BE phn
cc ngc.
- Tip gip BC phn
cc thun.
n p n
E B C
V
BE
V
BC
T
E
T
C
p n p
E B C
V
BE
V
BC
T
E
T
C
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Trang 264
- Phn b nng ht dn thiu s trong cc min ca BJT ch o
nh hnh v:
- Khi BJT npn ch o, min C phun ht dn a s (in t) sang
min B, v chng li c thu gom bi min E.
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Trang 265
- Tnh ton tng t nh ch tch cc, dng in trn cc cc c
tnh nh sau:
- H s khuch i dng Collector tnh:
B aB p
C dC n
B
E
R
W N D
W N D
I
I
= = |
|
.
|
\
|
+ = + = 1 exp exp
kT
qV I
kT
qV
I I I I
BC
R
S BC
S B E C
|
B
I
C
I
E
I
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Trang 266
c. BJT ch ngt (Cut-off )
U
CE
R
C E
C
E
B E
B
C I
CBo
S phn cc BJT npn
trong ch ngt
I
CBo
C
B
E
S tng ng n gin
ca BJT npn ch ngt
p n p
E
B C
V
BE
V
BC
T
E T
C
n
p
n
E B C
V
BE
V
BC
T
E
T
C
- Cung cp ngun sao cho hai tip xc PN u
c phn cc ngc. in tr ca cc chuyn
tip rt ln, ch c dng in ngc bo ha rt
nh ca tip gip gp I
CB0
. Cn dng in ngc
ca tip gip pht I
EB0
rt nh so vi I
CB0
nn c
th b qua. Nh vy, mch cc E coi nh h mch.
Dng in trong cc gc B I
B
=-I
CB0
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Trang 267
d. BJT ch bo ha (Saturation)
S phn cc BJT npn
trong ch bo ha
S tng ng n
gin ca BJT npn ch
bo ha
p n p
E
B C
V
BE
V
BC
T
E T
C
n
p
n
E B C
V
BE
V
BC
T
E
T
C
- Cung cp ngun in mt chiu vo cc cc ca Transistor sao cho hai tip xc PN
u phn cc thun. Khi in tr ca hai tip xc pht T
E
v tip xc gp T
C
rt
nh nn c th coi n gin l hai cc pht E v cc gp C c ni tt. Dng in
qua Transistor I
C
kh ln v c xc nh bi in p ngun cung cp E
C
v
khng ph thuc g vo Transistor ang s dng, thc t U
CE
~ 0,2V.
I
C
E
C
R
C
B
C
E
E
B
U
CE
I
C
R
C
E
C
B
C
E U
BE
U
CE
~ 0V
C
C
C
R
E
I ~
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Trang 268
1.3 M hnh Ebers-Moll
- M hnh c th s dng cho
BJT c 3 ch lm vic
khc nhau: ch tch cc, ch
ngt, ch bo ha.
- Thng dng cho cc trng
hp mt chiu v trng hp
tn hiu ln.
- c xy dng trn t h
phng trnh Ebers-Moll
C
I
B
I
E
I
Dng trn cc
it
( ) ( )
( ) ( ) 1 1
1 1
=
+ =
th BC
th
V
BE
V
th BC th BE
V V
CS ES F C
V V
CS R
V V
ES E
e I e I I
e I e I I
o
o
I
S
=o
F
I
ES
= o
R
I
CS
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Trang 269
M hnh Ebers-Moll n gin cho cc ch lm vic
- M hnh Ebers-Moll n gin cho BJT npn trong ch tch cc:
0.7
BE
V =
C F B
I I | =
B
I
B C
E
C
I
0.7
BE
V = 0.2
CE
V >
-M hnh Ebers-Moll n gin cho BJT npn trong
ch bo ha (2 it phn cc thun):
0.7
BE
V =
B
I
B C
E
0.1
CE
V =
C
I
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Trang 270
5.2. Cc cch mc BJT v cc h c tuyn tng ng
-Trong cc mch in, BJT c xem nh mt mng 4 cc: tn hiu c a
vo hai chn cc v tn hiu ly ra cng trn hai chn cc
-BJT c 3 cc l E, B, C nn khi s dng ta phi t mt chn cc lm dy
chung ca mch vo v mch ra. Ta c th chn mt trong 3 chn cc lm
cc chung cho mch vo v mch ra. Do , Transistor c 3 cch mc c bn
l mch cc pht chung (CE), mch cc gc chung (CB), v mch cc gp
chung (CC).
C
I B
I
E
I
U
BE
U
CE
(CE)
U
BC
C
I
B
I
E
I
U
EC
(CC)
C
I
B
I
E
I
U
EB
U
CE
(CB)
4C
i
1
i
2
u
2
u
1
- c trng ca mng 4 cc dng h phng trnh tr khng, dn np, hn
hp. H phng trnh hn hp:
( )
( )
=
=
2 1 2
2 1 1
,
,
u i f i
u i f u
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Trang 271
5.2.1 S BJT npn mc cc pht chung - CE
- Xc h nh c tuyn ra tnh:
+ Gi I
B
mt tr s c nh, thay i
U
CE
v ghi li gi tr tng ng ca I
C
,
v c c tuyn I
C
=f(U
CE
), Thay i I
B
n gi tr khc nhau l thc hin tng t,
kt qu thu c h c tnh ra tnh ca
BJT mc CE.
- Xc h nh c tuyn vo tnh:
+ Gi U
CE
mt tr s c nh, thay i U
BE
B
,
v c c tuyn I
B
=f(U
BE
), Thay i U
CE
n gi tr khc nhau l thc hin
tng t, kt qu thu c h c tnh vo tnh ca BJT mc CE.
- Xc nh h s truyn t (c tuyn khuch i):
+ C th c xc nh t c tuyn ra.
( )
B
I CE C
U f I | =
( )
CE
U B BE
I f U | =
I
B
I
C
I
E
U
BE
U
CE
( )
CE
U B C
I f I | =
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Trang 272
H c tuyn vo tnh
1
0,8
0,4
0,5
0,2
1 2 3 4
I
B
[A]
U
BE
[V]
U
CE
=0V
U
CE
=0,1V
U
CE
=10V
U
CE
=5V
U
CE
=2V
- Nhn xt c tuyn vo tnh:
+ Khi in p U
BE
< 0 th tip xc pht T
E
phn
cc ngc, trong lc tip xc gp phn cc
ngc (U
CE
< 0), nn Transistor lm vic ch
ngt, dng in pht I
E
= 0, nn ta c: I
B
= -
I
CBo
- Khi U
BE
> 0 th tip xc pht T
E
phn cc
thun, c tuyn ging nh c tuyn ca chuyn
tip PN phn cc thun, v dng I
B
l mt phn
ca dng I
E
qua chuyn tip T
E
phn cc thun.
I
B
= (1- o)I
E
- I
CBo
( )
CE
U B BE
I f U | =
- I
E
tng theo qui lut hm s m vi in p U
BE
nn dng in cc gc I
B
cng s tng
theo qui lut hm s m vi in p U
BE
.
- Vi gi tr U
BE
nht nh, U
CE
cng ln th dng I
B
cng nh, v U
CB
tng lm cho min
in tch khng gian ca T
C
cng rng ch yu v pha min B, nn s ht dn b cun n
min C cng nhiu, s ht dn b ti hp ti min B cng nh, nn dng I
B
cng nh.
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Trang 273
- c tuyn ra v c tuyn khuch i
ch tch cc
(Tr khng ra rt
cao)
c tuyn ra
Vng nh thng
I
B
=-I
CB0
I
B
=0A
ch ngt
Tng tuyn tnh
c tuyn khuch i
-Bo ha
0
1
2
I
B
(A
)
U
CE
=2V
U
CE
=5V
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Trang 274
- c tuyn ra v c tuyn khuch i
- Nhn xt c tuyn ra:
+ Ti min khuch i dc ca c tuyn kh ln, khi U
CE
tng lm cho
rng hiu dng ca min B hp li, lm cho s ht dn c cun sang min
C cng nhiu, do dng I
C
tng nhanh.
+ Khi U
CE
gim, n im un ca c tuyn khi U
CB
=U
CE
-U
BE
=0, lm
cho chuyn tip BC phn cc thun, BJT chuyn sang ch lm vic bo
ha. Khi U
EC
=0 thi in p phn cc thun U
CB
=-U
BE
y ht dn thiu s
min C tr li min B do I
C
=0, c tuyn cng i qua gc ta .
+ Khi U
EC
tng qu ln, lc U
CB
qu ln dn ti nh thng tip gip T
C
,
lm cho dng I
C
tng t ngt.
- Nhn xt c tuyn truyn t:
+ c tuyn truyn t biu th mi qua h gia dng ra I
C
v dng vo I
B
khi
gi U
CE
c nh. c tuyn ny c th suy ra t h c tuyn ra.
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Trang 275
Cc tham s c trng
- h dn S :
- in tr ra vi phn r
ra
:
- in tr vo vi phn r
vo
:
- H s khuch i dng in tnh: K
i0
K
i0
kh ln, mch CE c th khuch i dng in.
- Kim tra BJT lm vic ch bo ha hay khng? Khi tnh ton hoc o
c dng I
B
v I
C
m khng ph thuc vo tham s ca BJT, nu I
B
>I
C
/h
FE,
, th
BJT lm vic ch bo ha. Vy khi thit k mch dng BJT ch chuyn
mch, khi c yu cu v dng I
C
(thng thng I
C
=E
C
/R
ti
) th cn phi tnh
ton mch sao cho I
B
>I
C
/h
FE
BJT c th lm vic ch bo ha.
- c imca mch CE (Xemgio trnh).
const U U khi
dU
dI
S
CE ra
BE
C
= = = =
Vao
ra
dU
dI
const I I khi r r
B vo CE ra
= = = =
C
CE
dI
dU
const U U khi r r
BE ra BE vo
= = = =
B
BE
dI
dU
FE DC
B
C
i
h
I
I
K = = = = |
vo
ra
0
I
I
th
BE
th
BE
V
U
th
S
V
U
S C
e
V
I
S e I I = = .
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Trang 276
5.2.2 S BJT npn mc cc pht chung - CB
+ Gi I
E
U
CB
C
,
v c c tuyn I
C
=f(U
CB
), Thay i I
E
BJT mc CB.
+ Gi U
CB
EB
E
,
v c c tuyn I
E
=f(U
EB
), Thay i U
CB
tng t, kt qu thu c h c tnh vo tnh ca BJT mc CB.
- Xc nh h s truyn t
C
I
B
I
E
I
U
EB
U
CB
(CB)
( )
CB
U E EB
I f U | =
( )
CB
U E C
I f I | =
( )
E
I CB C
U f I | =
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Trang 277
H c tuyn vo tnh
- Nhn xt c tuyn vo:
+ Chuyn tip EB lun phn cc
thun nn c tuyn vo ca
mch CB c bn ging nh c
tuyn thun ca it. ng vi
in p m vo U
EB
c nh
dng vo I
E
cng ln khi in
p U
CB
cng ln, v min in
tch khng gian ca chuyn tip
T
C
phn cc ngc cng tng,
lm cho khong cch hiu dng
gia chuyn tip Emitter v
Collector ngn li, do dng
I
E
tng ln.
U
CB
=6V
U
CB
=1V
-1
-0,8
-0,4
-0,5
-0,2
-1 -2 -3 -4
I
E
[mA]
U
EB
[V]
U
CB
=0V
U
CB
=2V
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Trang 278
- c tuyn ra
- i vi dng I
E
c nh, I
C
~I
E
, khi U
CB
tng ln, I
C
tng nhng khng ng k.
- Khc so vi c tuyn ra ca BJT mc CE, khi in p U
CB
gim ti 0, I
C
vn cha
gim ti 0, do bn thn chuyn tip T
C
vn cn in th tip xc, chnh in th tip
xc ny cun nhng ht dn t min B sang min C lm cho dng I
C
tip tc
chy. I
C
=0 th T
C
phi c phn cc thun. Min c tuyn trong T
C
phn
cc thun gi l min bo ha.
- Khi U
CB
tng n gi tr no th I
C
tng ln t ngt do hin tng nh thng
xy ra.
I
C
(mA)
Vng tch cc
40 I
E5
= 40mA
30 I
E4
= 30mA
Vng
dn
bo 20 I
E3
= 20mA
ha o(I
E3
- I
E2
)
10
I
E2
= 10mA
I
E1
= 0
0 -2 -4 -6 -8 U
CB
(V)
Vng ngt
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Trang 279
Cc tham s c trng
- h dn S :
- in tr ra vi phn r
ra
:
- in tr vo vi phn r
vo
:
i0
K
i0
< 1, mch CB khng th dng lm mch khuch i dng in.
- c im ca mch CB (Xem gio trnh).
const U U khi
dU
dI
S
CB ra
EB
C
= = = =
Vao
ra
dU
dI
const I I khi r r
E vo CB ra
= = = =
C
CB
dI
dU
const U U khi r r
CB ra EB vo
= = = =
B
EB
dI
dU
1
I
I
0
vo
ra
0
< = = = o
E
C
i
I
I
K
th
BE
th
BE
V
U
th
S
V
U
S C
e
V
I
S e I I = = .
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Trang 280
5.2.3 S BJT npn mc cc gp chung - CC
U
BC
C
I
B
I
E
I
U
EC
(CC)
+ Gi I
B
U
EC
E
,
v c c tuyn I
E
=f(U
EC
), Thay i I
B
BJT mc CC.
+ Gi U
EC
BC
B
,
v c c tuyn I
B
=f(U
BC
), Thay i U
EC
tng t, kt qu thu c h c tnh vo tnh ca BJT mc CC.
- Xc nh h s truyn t (c tuyn khuch i):
( )
B
I EC E
U f I | =
( )
EC
U B BC
I f U | =
( )
EC
U B E
I f I | =
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Trang 281
c tuyn vo tnh
- c tuyn vo ca mch mc CC khc hn vi trng hp mc CE v
CB. Trng hp ny in p vo U
CE
ph thuc rt nhiu vo in p
ra U
CB
,
I
B
(A)
U
CB
(V)
-1 -2 -3 -4
10
20
30
40
U
CE
=2V U
CE
=4V
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Trang 282
c tuyn ra
ch tch cc
(Tr khng ra rt cao)
c tuyn ra
Vng nh thng
I
B
=-I
CB0
I
B
=0A
ch ngt
Tng tuyn tnh
c tuyn khuch i
-Bo ha
0
1
2
I
B
(A
)
U
CE
=2V
U
CE
=5V
I
E
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Trang 283
Cc tham s c trng
- h dn S :
- in tr ra vi phn r
ra
:
- in tr vo vi phn r
vo
:
i0
- H s khuch i in p :
- c im ca mch CC (Xem gio trnh).
const U U khi
dU
dI
S
EC ra
BC
E
= = = =
Vao
ra
dU
dI
const I I khi r r
B vo EC ra
= = = =
E
EC
dI
dU
const U U khi r r
EC ra BC vo
= = = =
B
BC
dI
dU
B
E
i
I
I
K = =
vo
ra
0
I
I
vo
ra
dU
dU
=
U
K
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Trang 284
5.3. Phn cc cho BJT
5.3.1. Khi nim phn cc cho cc ch lm vic ca BJT
5.3.2. Phn cc bng dng c nh
5.3.3. Phn cc bng hi tip m
5.3.4. Phn cc bng mch nh thin t cp
5.3.5. Mch phn cc kiu b
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Trang 285
- Phn cc (nh thin Biasing) cho BJT:
+ Mun BJT lm vic nh mt phn t tch cc th cc tham s ca BJT phi tha
mn iu kin thch hp, nhng tham s ny ph thuc nhiu vo in p phn
cc cc chuyn tip Collector v Emitter. Nh vy cc tham s ca BJT ph
thuc nhiu vo in p nh thin ban u (im lm vic tnh) ca n.
+ Mun BJT lm vic ch tch cc th chuyn tip B-E phn cc thun,
chuyn tip B-C phn cc ngc (BJT npn: U
E
U
B
>U
C
).
- ng ti tnh, im lmvic tnh
+ ng ti tnh (ng ti 1 chiu) c v trn c tuyn ra tnh ca BJT
nghin cu mi quan h gia dng in ra v in p ra ca BJT ch mt
chiu.
+ im lm vic tnh (im phn cc 1 chiu) l im nm trn ng ti tnh
xc nh dng in, in p 1 chiu trn BJT khi khng c tn hiu xoay chiu
t vo.
+ minh ha xt v d vi mch BJTnpn mc CE, xc nh ng ti tnh v
im lm vic ca chng.
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Trang 286
- Ty theo cc gi tr phn cc m im lm vic tnh c ta khc nhau,
im lm vic tnh Q
i
(U
CEi
,I
Ci
,I
Bi
) l giao im ca ng ti tnh v c tuyn
ra tng ng vi dng phn cc I
B
=I
Bi
.
- Khi c tn hiu t vo, I
B
bin i, dn ti I
C
bin i, kt qu l in p ra
trn ti bin i. Cn phi chn im lm vic tnh Q in p ra trn ti
khng b mo. Thng thng bin in p ra cc i, khng lm mo
dng tn hiu, im lm vic tnh thng c chn gia ng ti tnh.
- minh ha xt v d vi mch
BJTnpn mc CE, xc nh ng ti
tnh v im lm vic ca chng.
- Phng trnh ng ti tnh:
U
CE
=E
C
-I
C
.R
C
(ti 1 chiu: R
t0
=R
C
), th nh
hnh v trang bn.
Ura
Uvao
C2
C1
Ec
T1
R
C
R
B
I
B
I
C
U
CE
+
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Trang 287
E
C
/R
t0
I
B0
=0
I
B1
I
B2
I
B
3
I
C
(mA
)
U
CE
(V)
E
C
Q
2
Q
1
Q
3
im lm vic tnh
Q
i
(U
CEi
,I
Ci
,I
Bi
)
I
C
3
I
C
2
I
C
1
U
CE3
U
CE2
U
CE1
I
Cmax
U
CEmax
P
max
ng ti
tnh
AI
B
2
-AI
B2
AI
B
1
-AI
B1
-AU
CE2 AU
CE2
-AU
CE1
AU
CE1
E
C
/R
t02
im bo
ha
im ct
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Trang 288
n nh im lm vic tnh v n nh nhit
- BJT rt nhy cm vi nhit , nht l U
BE
v I
CB0
, nn khi nhit
thay i im lm vic tnh cng thay i. Nh vy im lm vic cng
nhy cm vi nhit .
- nh gi n nh ca im lm vic theo theo nhit l s dng
n nh nhit c nh ngha nh sau:
- Ta c I
C
= o
0
I
E
+ I
CBo
= o
0
(I
B
+I
C
) + I
CBo
<=> I
C
= o
0
I
B
/(1-o
0
)+I
CB0
/(1-o
0
),
<=> I
C
= |
0
.I
B
+I
CB0
/(1-o
0
),
- o hm 2 v phng trnh trn theo I
C
, rt gn ta c:
C
CB0
dI
S
dI
=
C
B
dI
dI
S
. 1
1
0
0
|
|
+
=
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Trang 289
M hnh tng ng mt chiu
- Khi tnh ton phn cc cho BJT c th s dng m hnh tng ng mt chiu.
Thng s dng m hnh Ebers-Moll. Trong mi ch lm vic c th s dng s
tng ng Ebers-Moll n gin.
- Tm li khi tnh ton ch 1 chiu n gin c th s dng cc cng thc sau:
+ Ch tch cc:
Dng trn cc
it
0
|
B C
I I =
( ) pnpSi npnSi eg
cont U
BE

~
7 , 0 ; 7 , 0 .
+ Ch bo ha:
0 ~
CE
U
+ Ch ngt:
0 ~
C
I
0
|
C
B
I
I >
0 ~
B
I
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Trang 290
5.3.2 Mch nh thin bng dng c nh (nh thin cc gc)
I
B
= (E
C
-U
BE
)/R
B
~ E
C
/R
B
Ura
Uvao
C2
C1
Ec
T1
R
C
R
B
I
B
I
C
U
CE
+
+
U
BB
Uvao
C1
Ura
C2
Ec
T1
R
C
R
B
+
I
B
I
C
(a- Mch 1 ngun) (b Mch hai ngun)
I
B
= (U
BB
-U
BE
)/R
B
~ U
BB
/R
B
- Dng I
B
t ngun mt chiu cung cp cho BJT khng i, c th dng mch 1
ngun mt chiu E
C
hoc hai ngun mt chiu U
BB
v E
C
. in tr R
B
u t cc
+ ca ngun cung cp v cc B sao cho tip gip BE phn cc thun
..
+ Phng trnh ng ti: E
C
=I
C
.R
t0
+U
CE
(R
t0
=R
C
)
+ Mc theo cc s trn I
B
=const => AI
B
/AI
C
=0
+ H h s n nh nhit l: S= |
0
+1, S ph thuc vo h s K dng Emitter
tnh |,vy S ph thuc vo tng loi BJT v thng ln, n nh km nht.
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Trang 291
V d: BJTnpn loi Si c: |
0
=50, phn cc bng mch nh thin c
nh, E
C
=15V, im lm vic tnh c I
B
=30A, U
BE
=0,6V. Tnh ton
mch nh thin?
p s: R
B
=480kO; U
CE
=7,5V; R
C
=5kO.
5.3.2 Mch nh thin bng dng c nh (nh thin cc gc)
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Trang 292
5.3.3 Mch phn cc hi tip m
- Khi tn hiu u ra thay i cng s tc ng n u vo lm thay
i tn hiu u vo gi l mch c hi tip.
- Nu tn hiu ra tng li lm tn hiu u vo gim th gi l hi
tip m.
- Vi mch phn cc cho BJT nu gi s khi nhit thay i lm
cho dng in ra I
C
v I
E
tng ln, s tng ny nu lm gim in
p t trn tip gip BE hoc CE th s lm cho I
B
gim, nh vy
I
C
v I
E
gim, im lm vic c n nh.
- Ty theo phng php dng hi tip m in p m c cc loi
mch phn cc hi tip m khc nhau:
a. Mch nh thin hi tip m Collector.
b. Mch nh thin hi tip m Emitter.
c. Mch nh thin hi tip m Collector v Emitter.
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Trang 293
a. Mch nh thin hi tip m Collector
- Mch nh thin c nh c n nh nhit khng cao, v khi dng I
C
tng lm in p U
CE
gim, c th dng c tnh ny lm cho dng I
B
gim
do n nh c dng I
C
bng cch dng in tr hi tip R
B
t cc C
v B, ta c mch Collector-Feedback Bias (CFB) hnh (a).
- Ta c: E
C
=(I
C
+I
B
)R
C
+U
CE
=(|
0
I
B
+I
B
)R
C
+I
B
R
B
+U
BE
- Phng trnh ng ti tnh: E
C
=(I
C
+I
B
)R
C
+U
CE
= I
C
R
C
(|
0
+1)/|
0
+U
CE
Ura
Uvao
C2
C1
Ec
T1
R
C
R
B
I
C
+
I
B
+I
C
C3
Uvao
C1
R
B1
Ura
C2
Ec
T1
R
C
R
B2
+
(a)
(b)
B C
BE C
B
R R
U E
I
+ +

=
) 1 (
0
|
( )
B C
BE C
C
R R
U E
I
+ +

=
) 1 (
.
0
0
|
|
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Trang 294
- Mt khc:
- H s n nh nhit:
- Nh vy S< |
0
+1, ci thin c tnh n nh nhit.
- Nu chn R
B
<<R
C
th S1.
- in p phn hi m qua R
B
trong mch phn cc lm tng n nh nhit
ng thi li lm gim h s khuch i tn hiu xoay chiu, R
B
gim th
n nh tng nhng h s khuch i gim. Nh vy khc phc mu thun
ny R
B
c chia thnh 2 phn R
1
v R
2
v dng t ni t im ni gia 2
in tr ny nh hnh (b). C h mch i vi tn hiu nh thin 1 chiu
nhng ngn mch tn hiu xoay chiu khng cho phn hi tr li u vo.
- Mch nh thin hi tip m Collector vn khng th tng c n nh
ln cao v S v im cng tc tnh ph thuc ln nhau.
B C
C
C
B
B C
BE C C C
B
R R
R
dI
dI
R R
U R I E
I
+
=
+

=
C B
C
R R
R
S
+
+
+
=
0
0
1
1
|
|
a. Mch nh thin hi tip m Collector
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Trang 295
b. Mch nh thin hi tip m Emitter
C
2
U
ra
U
vao
C
1
E
C
T
R
B
R
C
R
E
C
E
(b)
C
2
U
ra
U
vao
C
1
E
C
T
R
B
R
C
R
E
(a)
I
B
I
C
B E
BE C
B
R R
U E
I
+ +
=
) 1 (
) (
0
|
B E
BE C
C
R R
U E
I
+ +
=
) 1 (
) (
0
0
|
|
? = S
? =
CE
U
Phng trnh ng ti tnh ?
D dng tnh c:
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Trang 296
c. Mch nh thin hi tip m Collector v Emitter
Ura
Uvao
C2
C1
Ec
T1
R
C
R
B
I
C
+
I
B
+I
C
R
E
? =
B
I
? =
C
I
? = S
? =
CE
U
Phng trnh ng ti tnh ?
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Trang 297
5.3.4 Phn cc bng mch nh thin t cp
- Mch nh thin t cp (cn c gi l mch phn p, mch phn cc
bng dng Emitter, mch phn cc bng hi tip m dng in) c s
nh hnh (a). S tng ng tnh nh hnh (b) (p dng bin i
Norton, Thevenin vi c cu ngun E
C
v in tr phn p R
1
, R
2
.
- R
1
, R
2
to thnh mch phn p to in p U
B
t vo cc B ca BJT.
- R
E
hi tip m dng in. U
ht
= U
E
=I
E
.R
E
- Gi tr ca ngun bin i tng ng:
2 1
2 1
2 1
2
.
R R
R R
R v
R R
E R
E
B
C
B
+
=
+
=
R
E
R
2
Ura
Uvao
C2
C1
Ec
T1
R
C
R
1
+
I
B
I
C
I
pa1
I
pa2
(a)
U
B
Ec
+
R
1
R
2
U
B
R
E
+
E
B
Ec
T1
R
C
R
B
+
I
B
I
C
I
E
(b)
U
B
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Trang 298
- Cn chn R1, R2 th no m bo U
B
n nh v U
B
<<E
C
, nhng R
B
khng ln hn nhiu R
E
, nu khng th s phn cc ca mch ging nh
trng hp phn cc dng c nh. (Thng thng chn R
B
=R
E
).
E
B
=I
B
R
B
+U
BE
+(I
C
+I
B
)R
E
=U
BE
+I
B
(R
B
+(|
0
+1)R
E
- Trong trng hp ny khng c b qua U
BE,
- Tnh ton im phn cc:
- Ta c: U
E
=I
E
.R
E
=(|
0
+1).I
B.
R
E
+ Phng trnh ng ti tnh: E
C
=I
C
(R
C
+R
E
)+U
CE
+I
B
.R
E
(b qua I
B
.R
E
)
E
C
= I
C
(R
C
+R
E
)+U
CE
- Xc nh h s n nh nhit: S=?
E
B
=I
B
R
B
+U
BE
+(I
C
+I
B
)R
E
(E
B
v U
BE
khng ph thuc vo dng I
B
)
=> dI
B
/dI
C
= - R
E
/(R
E
+R
B
)
B C
E B
BE B
B
I I
R R
U E
I
0
0
;
) 1 (
|
|
=
+ +

=
E
B
E
B
B E
E
R
R
R
R
R R
R
S
+ +
+
+ =
+
+
+
=
0
0
0
0
1
1
) 1 (
1
1
|
|
|
|
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Trang 299
+ S1 khi R
B
<<R
E
, v S1+ |
0
khi R
B
>>R
E
+ S khng ph thuc vo R
t0
=R
C.
- Bn cht ca s n nh nhit ca mch nh thin t cp chnh l dng
phn hi m qua in tr R
E
. Tng R
E
ngha l tng phn hi m, do
lm gim h s khuch i tn hiu xoay chiu ca mch. C th loi
tr phn hi m ca tn hiu xoay chiu bng cch mc thm t in C
E
ngn mch i vi tn hiu xoay chiu nh hnh c, d.
- Trong thc t |
0
cng thay i theo nhit , do cng nh hng n
n nh ca im lm vic tnh, nh gi s nh hng ny dng
cng thc sau:
E
B
E
B
B E
E
R
R
R
R
R R
R
S
+ +
+
+ =
+
+
+
=
0
0
0
0
1
1
) 1 (
1
1
|
|
|
|
) 1 (
.
0 0
+
A
=
A
| |
| S
I
I
C
C
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Trang 300
R
E
R
2
Ura
Uvao
C2
C1
Ec
T
R
C
R
1
+
I
B
I
C
I
pa1
I
pa2 C
E
C
E
R
E2
R1 R
C
T
Ec
C1
C2
Uvao
Ura
R2
R
E1
+
(c)
(d)
- Bi ton thit k (xcnh ccgitr in tr phncc BJ T lmvic
im lmvic tnh no Q(I
B0
,U
CE0
,I
C0
)), Cn ch mt s lut sau:
+ Tnh R
!
, R
2
sao cho I
pa1
, I
pa2
>>I
B0
=> I
pa
~ I
pa1
~ I
pa2
~ E
c
/(R
1
+R
2
)
+ Thng chn I
pa
> 20I
B0
lut 20:1.
+ Chn R
B
s 0,01|
0
R
E
=> R
2
s 0,01|
0
R
E
Lut 100:1
+ Chn U
E
=0,1E
C
Lut 10:1
+ Da vo cc in tr c chn theo lut chn, tnh cc in tr cn li
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Trang 301
+
+ R
E
= U
E
/(I
B0
+I
C0
)
+ Chn R
2,
tnh R
1
da vo phng trnh sau:
E
B
=U
BE
+U
E
+I
B0
[R
1
R
2
/(R
1
+R
2
]= E
C
.R
2
/(R
1
+R
2
)
+ Kim tra li xem c tha mn iu kin I
pa
> 20I
B0
khng?
( Ch : Khi tnh ton nu d kin bi ton cho khng tnh chnh
xc cc in tr phn cc th c th dng mt s lut la chn chn
gi tr cc in no , tuy nhin cng dng t lut la chn th kt qu
cng chnh xc).
0
0
C
E CE C
C
I
U U E
R

=
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Trang 302
Tng kt s ci thin cc mch nh thin cho BJT
T
R
C
E
C
R
B
+ E
C
R
E
T
R
C
R
B
+
R
B
E
C
R
C
T
+
+
R
E
T
R
C
E
C
R
B
+
R
E
R
2
R
1
E
C
R
C
T
(1)
(2) (3)
(4) (5)
(1) : BB - Base Bias
(2) : EFB - Emitter-Feedback Bias
(3) : CFB - Collector-Feedback Bias
(4) : CEFB Collector- and Emitter- Feedback Bias
(5) : VDB Voltage Divider Bias
n nh tng dn
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Trang 303
Mch nh thin cho BJTpnp
T
R
C
E
C
R
B
- E
C
R
E
T
R
C
R
B
-
R
B
E
C
R
C
T
-
-
R
E
T
R
C
E
C
R
B
-
R
E
R
2
R
1
E
C
R
C
T
T
R
C
E
E
R
B
+
E
E
R
E
T
R
C
R
B
+
R
B
E
E
R
C
T
+
E
E +
R
E
T
R
C
R
B
+
R
E
R
2
R
1
E
C
R
C
T
BB
EFB
CFB CEFB VDB
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Trang 304
5.4. BJT trong ch chuyn mch (ch xung)
- V dng BJT hot ng trong cc mch xung, mch s, mch logic.
- BJT trong trng hp ny lm vic nh mt mt kha in t, BJT lm vic 2
ch : ng ch ngt (ngt mch khng c dng i qua BJT), m - ch
dn bo ha (ni mch cho dng i qua BJT ).
- Do c im hot ng nh vy m cc tham s cng nh c tnh ca BJT
chuyn dng cho cc ng dng ny cng c nhiu c tnh khc so vi BJT
chuyn hot ng ch tch cc. i khi nhng BJT chuyn dng ny cn c
gi l BJT xung.
- Vi nhng BJT lm vic ch chuyn mch ny th cc tham s sau quan
trng nht:
+ in p thun U
BEbh
: l in p U
BE
khi BJT mc CE trng thi bo ha.
+ in p bo ha U
CEbh
: l in p U
CE
khi BJT mc CE trng thi bo ho
+ Thi gian qu ca BJT : t
on
- thi gian qu khi BJT chuyn t ch
ngt sang ch bo ho, t
off
thi gian qu khi BJT chuyn t ch bo
ha sang ch ngt.
- Vi nhng ng dng tn s xung thp vn c th s dng cc BJT thng thng.
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Trang 305
- V d mch BJT lm vic ch chuyn mch nh hnh (a) , U
i
l xung vo.
+Khi U
i
=0V => tip gip BE, BC phn cc ngc, Q lm vic ch ngt,
I
B
=I
B0
=-I
CB0
~0, I
C
~0 => U
O
= E
C
=5V
+ Khi U
i
=5V, chn R
C
, R
B
sao cho Q lm vic ch bo ha, Khi :
U
o
=U
CE
~ 0V. Nh vy BJT lm vic chuyn i gia 2 im bo ha v ngt.
I
CSat
I
B0
=-I
CB0
I
B1
I
B2
I
B
I
C
(mA)
U
CE
(V)
E
C
im bo ha
U
CESat
im ngt
B
BE i
B
R
U U
I

=
C
C
C
CESat C
CSat
R
E
R
U E
I ~
=
|
CSat
B
I
I >
iu kin Q bo ha:
U
O
U
i
Ec =+5V
R
B
68 k
R
C
0.82k
Q (|=125)
U
i
t
5V
0V
U
O
t
5V
0V
C
E
R ~
C
E
R ~0
Ngt
Bo ha
(a)
5.4. BJT trong ch chuyn mch (ch xung)
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Trang 306
Thi gian qu ca BJT
- Gin thi gian minh hot cc thi gian
qu ca BJT lm vic ch chuyn
mch.
- Trong : Ban u BJT trng thi ngt,
ti thi im t
0
khi c xung dng t vo,
chuyn tip BE c phn cc thun BJT
m, tuy nhin I
C
vn rt nh nh trng
thi ngt trong thi gian tr t
d
, sau mi
bt u tng v sau thi gian tng t
r
mi
t gi tr bo ha I
CS
, v trng thi bo
ha trong khong thi gian t
n
, sau t
ngt xung vo mt U
i
=0, v dng I
B
chy
theo chiu ngc li, dng I
C
khng gim
nh ngay m tip tc duy tr gi tr bo
ha trong thi gian tn tch t
S
, sau mt
thi gian hi phc t
f
mi gim dn n
gi tr ban u nh trng thi ngt.
Thi gian qu :
r d on
t t t + =
f s off
t t t + =
U
i
U
1
-U
2
i
B
I
B1
-I
B2
t
t
i
C
I
CS
t
0
0
0,9I
CS
0,1I
CS
t
d
t
r
t
n
t
s
t
f
t
o
t
0
t
0
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Trang 307
5.5. M hnh tng ng ca BJT
- M hnh tng ng ca BJT l mch ghp ca cc phn t th
ng, ngun dng, ngun p xp x hot ng thc ca BJT trong
iu kin lm vic no .
- M hnh tng c c thay th cho BJT trong cc php xc nh
tham s no ca mch.
- Cc m hnh tng ng:
a. M hnh tng ng mt chiu
b. M hnh tham s Hybrid (Hybrid parameter/hParameter Model)
c. M hnh tng ng tn hiu nh hybrid-t
d. M hnh tng ng r
e
e. M hnh tng ng tn hiu ln
d. M hnh Spice
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Trang 308
a. M hnh tng ng mt chiu
-S dng m hnh Ebers-Moll
-Trong mi ch lm vic c th s dng s tng ng Ebers-Moll n gin
(xem li phn trc).
- Tm li khi tnh ton ch 1 chiu n gin c th s dng cc cng thc
sau:
+ Ch tch cc:
Dng trn cc
it
0
|
B C
I I =
( ) pnpSi npnSi eg
cont U
BE

~
7 , 0 ; 7 , 0 .
+ Ch bo ha:
0 ~
CE
U
+ Ch ngt:
0 ~
C
I
0
|
C
B
I
I >
0 ~
B
I
www.ptit.edu.vn
Trang 309
+ =
+ =
2 22 1 21 2
2 12 1 11 1
. .
. .
u h i h i
u h i h u
b. M hnh tham s Hybrid
4C
I
1
I
2
U
2
U
1
- M hnh tham s Hybrid c xc nh t ma trn tham s hn hp H ca mng 4
cc l tham s ca BJT trong iu kin im lm vic mt chiu.
- T h phng trnh hn hp H ca 4C c th suy ra m hnh tng ng ca 4C
nh hnh v (gi thit bin tn hiu xoay chiu nh ti im lm vic
chn BJT lm vic nh mt phn t tuyn tnh.
Tham s h s c k hiu v tnh theo mi cch mc BJT khc nhau
0
1
1
11
2
=
= =
u
i
i
u
h h
0
2
1
12
2
=
= =
i
r
u
u
h h
0
1
2
21
2
=
= =
u
f
i
i
h h
0
2
2
22
1
=
= =
i
o
u
i
h h
Tr khng vo khi
u ra ngn mch
khuch i in
p ngc h mch
H s khuch i dng
thun ngn mch
h dn ra khi
u vo h mch
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Trang 310
b. M hnh mch tng ng Hybrid mch mc CE
4C
i
1
i
2
u
2
u
1
e
u
B
BE
ie
r
i
u
h h
CE
= = =
=0
11
0
12
=
= =
C
i
CE
BE
re
u
u
h h
0
0
21
| = = =
=
CE
u
b
c
fe
i
i
h h
o
o ce
i
CE
c
oe
g
r r u
i
h h
B
= = = = =
=
1 1
0
22
E
i
u
BE
u
CE
(CE)
B
i
C
i
Tr khng tip gip emitter
Ch s ph thuc ca u
BE
vo u
CE
,
h
re
rt nh thng b qua
B
E
C
h
ie
h
oe
h
fe
i
B
u
BE
u
CE
h
re
u
CE
www.ptit.edu.vn
Trang 311
b. M hnh mch tng ng Hybrid mch mc CB,CC
C
I B
I
E
I
U
BE
U
CE
(CE)
U
BC
C
I
B
I
E
I
U
EC
(CC)
C
I
B
I
E
I
U
EB
U
CE
(CB)
4C
I
1
I
2
U
2
U
1
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Trang 312
c.M hnh tng ng tn hiu nh hybrid-t
- Da vo cc phng trnh c tnh v tham s xc nh trong ch tn hiu
nh, nu b qua cc thnh phn tch in, ta c th xy dng m hnh BJT ch
tn hiu nh nh hnh v sau (m hnh ny thng dng cho BJT hot ng
tn s thp):
Ti im lm vic tnh: Q(U
BE
/I
B
, U
CE
, I
C
)
C
th
m
I
V
g
r
. | |
t
= =
C
th
C
m
I
kT
q
V
I
g = =
C
An
I
V
r =
0
1
c m be ce
o
i g v v
r
= +
t
t
t
r
u
r
v
i
be
b
= =
(|.i
b
)
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Trang 313
d. M hnh tng ng r
e
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Trang 314
d. M hnh tng ng r
e
BJT npn
CE CB
Mi quan h gia cc tham s ca cc m hnh tng ng
(mc CE):
e
r r
t
| =
1
m
e
g
r
=
1
o
oe
r
h
=
i
b
i
c
E
Th
e
I
V
r =
i
b
R
1

1
k
E
E
B
C
+
+
-
-
r
e I
c
=i
e
R
1

1
k
B
B
E
C
i
in
= -i
e
i
o
= i
c
+
+
-
-
r
e
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Trang 315
CHNG 6.
TRANSISTOR TRNG - FET
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Trang 316
Chng 6- FET (Transistor hiu ng trng)
6.1. Gii thiu chung v FET
6.2. Transistor trng loi tip gip JFET
6.3. Cu trc MOS
6.4. Transistor trng loi cc ca cch ly IGFET
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Trang 317
6.1.Gii thiu chung v FET
- Transistor hiu ng trng FET (Field Effect Transistor) l mt dng linh
kin bn dn ng dng hiu ng in tr sut ca bn dn c iu khin
bng in trng,y l mt loi cu kin iu khin bng in p.
- Nguyn l hot ng c bn ca Transistor trng l dng in i qua
mt mi trng bn dn c tit din dn in, in tr sut hoc nng ht
dn thay i di tc dng ca in trng vung gc vi lp bn dn ,
do iu khin c dng in i qua n. Lp bn dn ny c gi l
knh dn in.
- Khc vi BJT, FET ch c mt loi ht dn c bn tham gia dn in.
- FET c ba chn cc l cc S, G, D.
BJT
E
B
C
FET
S Source
Cc ngun: cc ht dn a s i vo knh to ra dng in
ngun I
S
.
G Gate
Cc ca: cc iu khin dng in chy qua knh
D Drain
Cc mng: cc ht dn a s ri khi knh to ra dng I
D
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Trang 318
Phn loi chung v FET
- FET chia thnh cc loi theo cu trc ca cc ca v ca knh dn nh sau:
+ JFET (Junction FET) : Transistor hiu ng trng iu khin bng chuyn
tip PN, cc iu khin G ngn cch vi knh dn bng vng ngho ca
chuyn tip PN phn cc ngc.
+ IGFET (Isolated Gate FET) : Transistor hiu ng trng cc ca cch ly
vi knh dn, in hnh l linh kin MOSFET (Metal-Oxide-Semiconductor
FET) v MESFET (Metal-Semiconductor FET).
* MESFET: cc iu khin cch ly vi knh dn bng vng ngho ca
chuyn tip kim loi-bn dn.
* MOSFET cc iu khin cch ly hn vi knh dn thng qua mt lp
in mi (SiO
2
). y mi ng l Transistor trng theo ng ngha ca
thut ng ny, v ch c loi ny dng chy qua knh dn mi c iu
khin hon ton bng in trng, dng iu khin hu nh bng khng
tuyt i, trong khi dng r ca chuyn tip PN hoc Schottky phn cc
ngc, cha hon ton bng khng).
- Mi loi FET cn c chia thnh loi knh N v knh P.
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Trang 319
* Mt s u im ca FET:
- FET l loi linh kin mt loi ht dn (unipolar device).
- FET c tr khng vo rt cao.
- Nhiu trong FET t hn nhiu so vi Transistor lng cc.
- FET khng b in p ti dng I
D
= 0, do n l linh kin chuyn
mch tuyt vi.
- C n nh v nhit cao.
- Tn s lm vic cao.
- Kch thc ca FET nh hn ca BJT nn c nhiu u im trong IC.
* Mt s nhc im:
- Nhc im chnh ca FET l h s khuch i in p thp hn nhiu
so vi BJT
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Trang 320
6.2. Transistor trng loi tip gip - JFET
6.2.1. Cu to ca JFET
6.2.2. Nguyn l hot ng ca JFET
6.2.3. Cc cch mc v h c tuyn ca JFET
6.2.4. Phn cc cho JFET
6.2.5. Cc m hnh tng ng ca JFET
6.2.6. Mt s ng dng ca JFET
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Trang 321
- JFET cu to gm:
+ Mt knh dn c lm t bn dn N (JFET knh dn N) hoc P (JFET knh dn
P), c 2 in cc 2 u l cc ngun S v cc mng D.
+ in cc th 3 l cc cng G, gia cc ny v knh dn c mt chuyn tip PN,
trong min bn dn cc cng c pha tp mnh hn nhiu so vi knh dn
vng in tch khng gian (vng ngho) ca chuyn tip PN lan ch yu v pha
knh dn.
- JFET hu ht u l loi i xng, c ngha l khi u trong mch ta c th i ch
hai chn cc S v D cho nhau th cc tnh cht v tham s ca JFET khng h thay
i
Chuyn tip P-N
Knh N Knh P
D
G
S
D
G
S
G
D S
Knh dn N
P+
P+
G
D S
Knh dn P
N+
N+
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Trang 322
JFET cng sut thp
JFET cng sut cao
JFET v kim loi
JFET v nha
JFET v nha tng hp vi u
nhit kim loi
JFET v hon ton bng kim loi
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Trang 323
- Nguyn l hot ng ca JFET knh loi N v knh loi P ging nhau. Chng
ch khc nhau v chiu ca ngun in cung cp l ngc du nhau.
- JFET c phn cc sao cho vng chuyn tip PN bao quanh knh dn lun
c phn cc ngc, v dng cc ht dn a s i vo knh to ra dng I
S
.
- Nh vy ngun phn cc mc sao cho: vi JFET knh n: U
DS
> 0 v U
GS
< 0
v vi JFET knh p: U
DS
< 0; U
GS
> 0.
a) J FET knh N
E
G
+
E
D
+
R
D
D
G
S
U
GS
U
DS
I
D
E
G
+
E
D
+
R
D
D
G
S
U
GS
U
DS
I
D
b) J FET knh P
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Trang 324
- Trong phn ny chng ta s trnh by v nguyn l hot ng ca JFET
knh N, sau suy ra nguyn l hot ng ca JFET knh P.
- Do tc dng ca cc in p U
GS
v U
DS
, trn knh dn xut hin 1 dng
in (l dng in t vi JFET knh N) hng t cc D ti cc S gi l
dng in cc mng I
D
. Dng I
D
c ln ty thuc vo cc gi tr U
GS
v
U
DS
v phn cc ngc ca chuyn tip PN ph thuc mch vo c 2
in p ny nn dn in ca knh ph thuc mnh vo c 2 in trng
ny. Nh vy v c bn c th ni rng JFET l mt in tr c tit din
thay i c, v tit din ny c thay i bi in p iu khin.
I
D
=f(U
GS
, U
DS
)
- Nu xt ring s ph thuc ca I
D
vo tng in p khi gi cho in p cn
li khng i (coi l mt tham s) ta nhn c hai quan h hm quan trng
nht ca JFET l:
( )
( )
GS
DS
D DS
U const
D GS
U const
I f U
I f U
=
=
=
=
1
2
c tuyn ra
c tuyn truyn t
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Trang 325
c tuyn ra ca nJFET
G
D S
N
P+
P+
U
GS
G
D S
N
P+
P+
U
GS
U
DS
I
D
G
D S
N
P+
P+
U
GS
U
DS
= U
p
A
G
D S
N
P+
P+
U
GS
U
DS
Vng nh thng
(Avalanche Region)
2 4 6 8 10 12 U
DS
(V)
Vng m tnh
(Ohmic Region)
12
10
8
6
4
2
0
I
Dbh
I
D
(mA)
U
GS
<0V
A
B
U
P
Vng bo ho
(Pinchoff
Region)
U
GS
U
DS
=U
dt
G
D S N
P+
P+
B
(a)
(b)
(c) (d)
(e)
( )
const U DS D
GS
U f I
=
=
1
U
t
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Trang 326
a/ Vng ohmic (Vng Triot): Khi U
DS
tng dn, I
D
tng dn, lc u U
DS
cn
nh, st p ca n gy trn in tr knh nh hng khng ng k n
rng ca min in tch khng gian, nn I
D
tng tuyn tnh theo U
DS
, vng
c gi l vng mtnh, v lmvic ging nh in tr thun.
b/ im tht A: Khi U
DS
tng ln lm cho I
D
ln n mc st p do dng ny
gy ra trn knh lm tng ng k in p phn cc ngc chuyn tip PN
gia cc G v knh, min in tch khng gian lan su vo knh, lm cho
in tr knh tng dn, do I
D
tng chm li, Nu nh tip tc tng U
DS
n thi im U
DS
=U
P
, th hu nh I
D
khng tng mc d tip tc tng
U
DS.
. im U
DS
=U
P
c gi l im tht A, U
P
l in p tht ca knh,
dng in I
D
ng vi im tht gi l dng bo ho I
Dbh
.
c/ Vng bo ho (vnglmvic tch cc): Khi U
DS
tip tc tng vt qua im
tht A, U
DS
>U
P
, th I
D
hu nh khng tng, I
D
=I
Dbh
, do khi U
DS
tng vng
in tch khng gian cng lan su vo knh v in tr knh cng tng ln
t l vi U
DS
, do dng khng i. Nhng gi tr dng I
Dbh
li tng nhanh
theo U
GS
.
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Trang 327
d/ im nh thng B: Khi U
DS
tng qa ln, in p phn cc ngc gia G
v knh tng mnh, n khi U
DS
=U
dt
th hin nh thng theo hiu ng thc l
xy ra, do dng I
D
tng t ngt khi U
DS
tng, im B gi l im nh
thng, vng ngoi im B gi l vng nh thng ca knh.
- H c tuyn ra ca JFET c dng nh
hnh v bn:
+ Khi U
GS
m dn, th s phn cc ngc
ca G v knh cng tng, in p tht
U
P
knh t ti im tht cng nh,
ng t nt trn h c tuyn ni cc
imtht vi nhau.
+ Tng t, vi im nh thng B, khi
U
GS
cng m vic nh thng chuyn
tip PN xy ra sm hn, in p nh
thng cng nh hn.
+ Khi U
GS
<=U
GS0
th I
D
=0 mc d U
DS
tng, U
GS0
- in p kha knh
12
10
8
6
4
2
0
2 4 6 8 10 12
U
DS
(V)
I
D
(mA)
U
GS
=
0V
0,5 V
1,0 V
1,5 V
Gim dn
U
GS
A
B
U
P0
Vng
ohmic
Vng bo ho
Vng
nh
thn
g
U
GS0
I
DSS
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Trang 328
c tuyn truyn t ca nJFET
- c tuyn truyn t ca JFET m t mi quan h gia I
D
v in p U
GS
ng
vi mt gi tr nht nh ca U
DS
. Dng c tuyn truyn t khi JFET lm
vic vng bo ho nh hnh bn tri. c tuyn xut pht t mt gi tr U
GS0
,
ti I
D
= 0, gi l in pkho.. Khi tng U
GS
, I
D
tng gn nh t l do dn
in ca knh tng theo mc gim phn cc ngc ca tip gip PN. Lc
U
GS
= 0, ti vng bo ho I
D
= I
DSS,
, vy I
DSS
l dng tnh cc mng bo ha ln
nht (khi U
GS
=0).
12
10
8
6
4
2
0
2 4 6 8 10 12 U
DS
(V)
I
D
(mA)
U
GS
=
0V
0,5 V
1,0 V
1,5 V
Gim dn U
GS
A
B
U
P0
I
DS
S
U
GS0
3 2 1 0 U
GS
(V)
12
10
8
6
4
2
U
DS
=
10V
U
DS
tng
U
GS0
I
DSS
I
D
(mA)
( )
const U GS D
DS
U f I
=
=
1
Knh N
D
G
S
I
D
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Trang 329
- Quan h gia I
D
v U
GS
c xc
nh bi phng trnh Shockley:
- Phng trnh Shockley:
- Trong : I
DSS
l dng cc mng bo ho khi U
GS
= 0, khi knh m rng
nht v lc ny I
D
t gi tr ln nht ca n, nn nh vy c ngha l I
DSS
l
dng cc mng cc i c th t c ca JFET
- U
GS0
l in p kho knh hay in p ngt knh, v I
D
=0 khi rng ca
knh dn bng 0, nn nh vy c ngha l U
GS0
l th p t ln cc cng
lmcho JFET bt u b kho li hon ton.
- I
DSS
v U
GS0
l 2 tham s quan trng ca JFET dng nhiu khi thit k
mch.
s s
|
|
.
|
\
|
(
(
|
|
.
|
\
|

|
|
.
|
\
|

=
0 1
1 1 2
0
2
0
2
0 0 0
GS GS
GS
GS
DSS
GS
GS
GS
DS
GS
GS
DSS
D
U U khi
U
U
I
U
U
U
U
U
U
I
I
3 2 1 0 U
GS
(V)
12
10
8
6
4
2
U
DS
= 10V
U
DS
tng
U
GS0
I
DSS
I
D
(mA)
Vng ohmic
Vng bo
ho
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Trang 330
+ Cc h c tuyn ca n-JFET
3 2 1 0 U
GS
(V)
12
10
8
6
4
2
U
DS
=
10V
U
DS1
U
GS0
I
DSS
I
D
(mA)
12
10
8
6
4
2
0
2 4 6 8 10 12 U
DS
(V)
I
D
(mA)
U
GS
= 0V
0,5 V
1,0 V
1,5 V
Gim dn U
GS
A
B
U
P0
I
DSS
U
GS0
Knh N
D
G
S
I
D
s s
|
|
.
|
\
|
(
(
|
|
.
|
\
|

|
|
.
|
\
|

=
0
2
0
2
0 0 0
0 1
1 1 2
GS GS
GS
GS
DSS
GS
GS
GS
DS
GS
GS
DSS
D
U U khi
U
U
I
U
U
U
U
U
U
I
I
Vng ohmic
Vng bo ho
I
DSS
>0 Dng I
Dbh
khi U
GS
=0V
U
GS0
<0 - in p kha knh
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Trang 331
+ Cc c tuyn ca p-JFET
U
DS1
U
GS0
I
DSS
I
D
(mA)
U
GS
0
D
G
S
I
D
s s
|
|
.
|
\
|
(
(
|
|
.
|
\
|

|
|
.
|
\
|

=
0
2
0
2
0 0 0
0 1
1 1 2
GS GS
GS
GS
DSS
GS
GS
GS
DS
GS
GS
DSS
D
U U khi
U
U
I
U
U
U
U
U
U
I
I
Vng ohmic
Vng bo ho
I
DSS
>0 Dng I
Dbh
khi U
GS
=0V
U
GS0
>0 - in p kha knh
I
D
(mA)
U
GS
= 0V
0,5 V
1,0 V
1,5 V
Gim dn U
GS
A
B
U
P0
I
DSS
U
GS0
U
DS
U
DS1
0
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Trang 332
6.2.3. Cc cch mc mch khuch i ca JFET
-Cng tng t nh BJT, JFET cng c 3 cch mc ch yu l: Chung
cc ngun (CS), chung cc mng (DC), v chung cc ca (CG). Trong
kiu CS thng c dng nhiu hn c v kiu mc ny cho h s
khuch i in p cao, tr khng vo cao. Cn cc kiu mc CD, CG
thng c dng trong tng khuch i m v khuch i tn s cao.
U
vao
U
ra
C
3
C
2
R
S
+E
D
C
1
R
D
Q1
R
G
U
vao
U
ra
R
S
Q1
C
1
+E
D
C
2
R
G
U
ra
U
vao
R
D
C
5
+E
D
C
1
Q
R
S
(CS)
(CD)
(CG)
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Trang 333
-ng ti tnh ca JFET cng c v trn c tuyn ra ca n.
im lm vic cn xc nh Q(U
GS
, U
DS
, I
D
). im lm vic tch
cc cn phi nm trn vng c tuyn bo ho.
- C nhiu kiu mch phn cc khc nhau, phn tch, tnh ton mch
phn p cho JFET s c da trn cc iu kin sau:
+ Dng cc cng rt nh, b qua, coi nh cc ca h mch
+ in p U
DS
ln JFET lm vic trong vng bo ho (vng
pinch-off), khi I
D
=I
Dbh
const ng vi mi gi tr U
GS
xc nh.
+ c tnh truyn t s c s dng phn tch theo phng php
th , kt hp vi cc phng php phn tch mch KVL, KCL.
+ S dng phng trnh Schockley .
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Trang 334
a. nh thin in p cc G c nh (Gate bias/Fixed bias)
U
DS
(V)
I
DQ
I
D
(mA)
U
GSQ
= -2V
Q
U
DSQ E
D
- Mch nh thin nh hnh v: S dng ngun p E
G
phn cc ngc cho chuyn tip PN gia cc G v

knh dn.
- Thams ca mch: E
G
= - 2V; E
D
= +20V
- Thams ca JFET:U
GS0
= -3,5V;I
DSS
= 5mA
- Tnh imlmvic tnh n nmgia ng ti tnh.
Tnh ton
- Do I
G
rt nh nn: U
GS
= E
G
=-2V.
- ng ti tnh: E
D
- I
D
.R
D
-U
DS
= 0
- Mt khc theo phng trnh Schockley :
I
DQ
= I
DSS
(1-U
GS
/V
GS0
)
2
= 0,92 mA
- Q nmgia ng ti: U
DSQ
=E
D
/2=10V
- Vy: R
D
= (E
D
-U
DSQ
)/I
DQ
=10,8 kO.
- Do phi dng 2 ngun v n nh khng cao
nn mch phn p ny t c s dng.
Ura
Uvao
+
E
G
C1
C2
+E
D
Q1
R
G
R
D
I
D
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Trang 335
b. Mch t nh thin (Sefl bias)
Tnh ton
+ Do I
G
rt nh nn b qua , I
G
=0, nn I
S
=I
D.
+ U
RS
=I
S
.R
S
=I
D
.R
S
+ p dng KVL ta c: U
GS
+I
D
R
S
+I
G
.R
G
=0
U
GS
= - I
D
R
S
Phng trnh ng ti u vo.
+ Nu chn im lm vic Q1 c U
GSQ1
= -2V.
I
DQ1
= I
DSS
(1-U
GSQ1
/V
GS0
)
2
= 0,92 mA.
R
S
= -U
GSQ1
/I
DQ1
= 2,17 kO.
R
D
= (E
D
-U
DSQ
)/I
DQ
- R
S
= 8,63 kO.
- Mch nh thin nh hnh v: S dng mt
in tr thch hp mc ni tip vi cc S
cung cp in p cho cc G. E
D
= +20V, Tham
s ca JFET: U
GS0
= -3,5V; I
DSS
= 5mA
- Tnh ton imlmvic tnh nu U
DSQ
=10V.
R
S
Ura
Uvao
C
1
C
2
+E
D
Q1
R
G
R
D
U
GS
(V)
U
DS
= 10V
I
DSS
I
D
(mA)
U
GS0
=-3V U
GSQ1
U
GSQ1
Q1
I
DQ1
R
S1
R
S2
Q2
I
D
I
S
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Trang 336
c. Mch nh thin t cp
- S dng 2 in tr phn p R1, R2 to ra in p nh
thin cho cc G. Cho E
D
= +20V, Tham s ca JFET:
U
GS0
= -3,5V; I
DSS
= 5mA
- Tnh im lm vic tnh nu U
DSQ
=10V
Tnh ton
+ Do I
G
rt nh nn b qua , I
G
=0, nn I
S
=I
D.
U
RS
=I
S
.R
S
=I
D
.R
S
U
G
= E
D
.R
2
/(R
1
+R
2
)
+ p dng in p vng KVL ta c :
U
G
-U
GS
-I
D
.R
S
= 0(phng trnh ng ti vo)
+ Nu chn I
D
=2mA
+ M I
D
= I
DSS
(1-U
GS
/V
GS0
)
2
U
GS
= - 1,28V, Chn U
RS
<= 0,1.E
D
Chn R
2
=200kO, tnh tip cc in tr cn li
R
D
R
1
R
S
Ura
Uvao
C1
C
2
+E
D
Q1
R
2
U
GS
U
DS
=
10V
I
DSS
I
D
(mA)
U
GS0
=-3V U
GSQ1
U
GSQ1
Q1
R
S1
R
S2
Q2
U
G
2mA
I
D
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Trang 337
6.2.5 M hnh tng ng ca JFET
a/ M hnh tng ng 1 chiu v tn hiu ln
b/ M hnh tng ng tn hiu nh
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Trang 338
N_JFET
a/ M hnh tng ng JFET lm vic vng bo ho
P_JFET
K.I
DSS
R
GS
U
GS
-
+
+
-
U
DS
K.I
DSS
R
GS
U
GS
+
-
-
+
U
DS
b/ M hnh tng ng JFET lm vic vng ohmic
U
GS
R
GS
-
+
+
-
U
DS
R
DS
R
GS
U
GS
+
-
-
+
U
DS
R
DS
2
0
1
|
|
.
|
\
|
=
GS
GS
U
U
K
2
0
1
|
|
.
|
\
|
=
GS
GS
U
U
K
Dbh
p
DS
I
V
R =
I
D
I
D
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Trang 339
N_JFET
P_JFET
g
m.
u
gs
r
d
D
S
G
g
m.
u
gs
r
d
D
S
G
0 0 0
. 2
1
2
GS
DSS DS
GS
GS
GS
DSS
m
U
I I
U
U
U
I
g
=
|
|
.
|
\
|
=
0
0
2
GS
DSS
m
U
I
g

=
|
|
.
|
\
|
=
0
0
1
GS
GS
m m
U
U
g g
D
An
d o
I
V
r r = =
b/ M hnh tng ng tn hiu nh tn thp
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Trang 340
6.2.6 Mt s mch ng dng n gin ca JFET
G
D
S
+
-
R
G
R
S
R
L
V
DD
Q1
C
C
C
S
u v o
m ch
u r a
m ch
+ B khuch i xoay chiu dng JFET
+
-
D S
G
V
S
R
L
V
RL
V
DS
I
DS(b o ho)
+ Mch n dng dng JFET
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Trang 341
Ha M. Do -
PTIT
Lecture 7 341
3. Cu trc MOS
3.1 Cu trc MOS trong iu kin cn bng nhit
3.2 Cu trc MOS khi c in p phn cc
3.3. c tuyn Q-V
3.4. Mt s hiu ng bc hai
3.5. Cc m hnh dng cho linh kin MOS
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Trang 342
Ha M. Do -
PTIT
Lecture 7 342
3. Cu trc MOS
- MOS = Metal-Oxide-Semiconductor: Cu trc t in MOS gm c
lp in cc kim loi ph nn lp bn dn c nng pha tp rt cao
(n+ hoc p+) tng ng nh lp Metal (Min Gate), v lp bn dn
nn (loi p hoc n)-lp Semiconductor (min Body), gia chng c lp
cch in rt mng dng Oxide SiO
2
.
- Lp kim loi Metal thng dng lp bn dn pha tp cao n+ hoc p+.
- Lp bn dn nn dng loi p ta c cu trc NMOS, nu dng loi n ta
c cu trc PMOS.
Oxide (SiO
2
)
Body (p-type substrate)
Gate (n
+
poly)
0
11.7
s
c c =
0
3.9
ox
c c =
Rt mng!
~1nm
ox
t
x
0
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Trang 343
6.3. Cu trc MOS
- Cu trc MOS v ang l cng ngh ch o to ra cuc cch mng
v lnh vc in t. C rt nhiu ng dng dng cu trc MOS:
+ Dng trong nhiu vi mch tng t v s: MOSFET l phn t c bn
trong h vi mch CMOS.
+ Dng nhiu trong cc vi mch nh: DRAM, EPROM
+ Dng c cc thit b nh nh camera CCD (Charge-Couple Device)
+ Dng trong cc loi mn hnh ch th nh Mn hnh ma trn tinh th
lng tch cc
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Trang 344
6.3.1 in trng ca nMOS trong iu kin cn bng nhit
+ Vng bn dn nn (Min Body): c th hnh thnh vng in tch khng
gian.
- iu kin cn bng khng th c thit lp thng qua lp oxide nn
cn phi c dy dn chuyn in tch gia lp kim loi v lp bn dn.
- M hnh cu trc nMOS l
tng nh hnh v.
+ Min kim loi Metal (Min
Gate) khng to thnh mt
vng tch in m n ch tch
in trn b mt.
+ Lp oxide l cht in mi,
cch in hon ton, khng tch
in.
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Trang 345
- Qua dy dn s c s khuch tn in t t min kim loi G sang min bn dn
B v l trng t min B sang min G, chng ti hp vi nhau.
- Nh vy Min B s tch in -, min G tch in +, gia chng hnh thnh in
trng E
ox
hng t G sang B. in trng ny lm hnh thnh lp in tch
dng ngay di y ca min G v min in tch m trong min B ngay di
lp oxide (Do E
ox
cun in t v l trng ngc vi dng khuych tn)
- Min in tch trong min bn dn to ra mt vng chuyn tip c rng
X
d0
ngay st lp oxide.
log p
0
, n
0
0 d
X
+
ox
V
+
B
V
ox
E
+
-
+ + + + + + + +
-
-
-
-
-
-
-
-
+
-
Ion Donor +
Ion Acceptor -
6.3.1 in trng ca nMOS trong iu kin cn bng nhit
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Trang 346
6.3.2 in trng ca nMOS khi c phn cc
- Khi c in p phn cc U
GB
t vo nMOS, tu theo gi tr in p phn cc
U
GB
vng in tch khng gian thay i v c th tn ti cc trng thi khc
nhau.
- Khi c in p phn cc, in th ni t qua cu trc MOS thay i t :
|
B
> |
B
+U
GB
- Do lp oxide cch in nn dng in ti bt k v tr no trong cc lp bn dn
J=0, nh vy J
driff
= -J
diff
.
- Ti bin gia lp oxide v bn dn, in trng pha lp oxide E
ox
v in
trng pha bn dn nn E
S
lun tho mn iu kin sau:
Eox/E
S
3
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Trang 347
- Khi U
GB
>0, G ht in t t do v y l trng, nh vy
vng chuyn tip s c m rng.
- Ngc li nu U
GB
<0, cc G y in t v ht l trng,
nh vy vng chuyn tip s thu hp
- Nh vy tu theo in p phn cc m cu trc MOS c th tn
ti cc trng thi nh sau:
+ Trng thi bng phng (Flatband): U
GB
= U
FB
= -|
B
+ Trng thi tch lu (accumulation): U
GB
 U
T
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Trang 348
-Khi t in p phn cc U
GB
=V
FB
=-|
B
<0, in p phn cc b vi hiu
in th ni |
B,
, c tc dng cun in t t min B sang min G, in tch
ca cc min G v B gim dn n bng 0, v cc vng tch in bin mt.
-Vi in kin phn cc nh vy MOS c di nng lng bng phng
flatband. in p V
FB
gi in p flatband.
-Mt in tch min G: Q
G
(V
FB
) = 0.
- Trng hp ny ban u dng cun do U
GB
to ra ngc chiu v ln
bng vi dng khuch tn.
( ) 0
G GB FB
Q V V = =
-
+
U
GB
=V
FB
= -|
B
<0
Trng thi bng phng (Flatband): U
GB
= U
FB
= -|
B
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Trang 349
+ Trng thi tch lu (accumulation): U
GB
< U
FB
- Nu in p phn cc gim nh hn V
FB
, cu trc nMOS ging nh t
in 2 bn cc song song. Min G tch in (in tch do in t t do to
ra), min B tch in + (in tch do l trng to ra)
- Mt in tch ca min G:
C
ox
- mt in dung ca t MOS
- Trng hp ny ban u dng cun do U
GB
to ra ln hn v ngc chiu
dng khuch tn.
+
++++++++++++++++++

( )
G ox GB FB
Q C V V =
B G
Q Q =
U
GB
<V
FB
( )
G ox GB FB
Q C V V =
(+)
(-)
L trng
in t t do
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Trang 350
+ Trng thi chuyn tip (depletion): U
FB
V
FB
nn vn tn ti dng khuch tn in t t min kim loi G sang
min bn dn B v l trng t min B sang min G qua dy dn v vt
qua in th ca ngun cung cp. Nh vy Min B s tch in +, min G
tch in -, gia chng hnh thnh in trng E
ox
hng t G sang B.
in trng ny lm hnh thnh lp in tch dng ngay di y ca
min G v min in tch m trong min B ngay di lp oxide to ra mt
vng chuyn tip c rng x
d
ngay st lp oxide
+ Trng hp ny ban u dng cun do U
GB
to ra ngc chiu v nh hn
dng khuch tn.
-
+
( )
B a d GB
Q qN X V =
( )
G GB B
Q V Q =
0>U
GB
>V
FB
+ + + + + + +
-
-
-
-
-
-
-
+
-
Ion Donor +
Ion Acceptor -
www.ptit.edu.vn
Trang 351
+ Trng thi chuyn tip (depletion ): 0< U
GB
< U
T
+ Khi 0 < U
GB
< U
T
, tng t nh trng hp U
FB
< U
GB
< 0, Vng chuyn tip c
hnh thnh ngay st lp oxide c rng c m rng hn. Min tch in + c
hnh thnh pha y ca min G ngay st lp oxide v min in tch - c hnh
thnh pha nh ca min B ngay st lp oxide. in tch m to ra do cc Ion
Acceptor v nng in t t do tng ln.
+ Khi U
GB
tng th vng chuyn tip cng c m rng.
+ Ti vng chuyn tip pha min B bn dn p, khi U
GB
tng nng in t tng
dn, nng l trng gim dn.
+Trng hp ny ban u dng cun do U
GB
to ra cng chiu vi chiu dng khuch
tn
+ + + + +
+
0<U
GB
( )
B a d GB
Q qN X V =
( )
G GB B
Q V Q =
+ + + +
- - - -

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Trang 352
+ Trng thi ngng (threshold): U
GB
= U
T
- Khi tng U
GB
, ti min in tch chuyn tip trn nh min B, nng
in t tng dn, nng l trng gim dn.
- Khi U
GB
=U
T
ti nh ca min B nng in t bng nng l trng
vng bn dn cn trung ho n(0)=N
a
, cn nng l trng bng nng in
vng bn dn cn trung ho p(0)=n
i
2
/ N
a.
Trng thi ny gi l trng thi
ngng - Bn dn bt u chuyn t loi p sang loi n.
- in p U
T
c gi l in p ngng.
+ + + + + +
+
GB T
V V =
s
|
+ + + + +
- - - - -

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Trang 353
+ Trng thi o (inversion): U
GB
> U
T
- Khi U
GB
>U
T
nng in t t do ti b mt ca min bn dn B
tip gip vi lp oxide tng ln hn N
a
, trng thi o ht dn xy
ra. Lp in t ti b mt c gi l lp o, bn dn ti tng
ng bn dn n
- Nng in t t do ti b mt c iu ch theo in p U
GB
,
nu U
GB
tng th n(0) tng => in tch ca lp o Q
n
tng.
(Lp o ht dn, tng ng bn dn n)
+ + + + + +
+
GB T
V V =
s
|
+ + + + +
- - - - -

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Trang 354
Tng kt v cc trng thi ca cu trc MOS
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Trang 355
Tng kt v cc trng thi ca cu trc nMOS
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Trang 356
6.4. Transistor trng loi cc ca cch ly IGFET
6.4.1 Cu to v nguyn l hot ng ca MOSFET loi knh t
sn (Depletion Type MOSFET- DMOSFET)
6.4.2. Cu to v nguyn l hot ng ca MOSFET loi knh cm
ng (Enhancenment Type MOSFET- EMOSFET)
6.4.3. Cc cch mc v h c tuyn ca MOSFET
6.4.4. Phn cc cho MOSFET
6.4.5. Cc m hnh tng ng ca MOSFET
6.4.6. Mt s ng dng ca MOSFET
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Trang 357
6.4.1 Cu to ca MOSFET
- MOSFET l loi linh kin in hnh trong h FET c cc ca G cch ly.
MOSFET v c bn c cu to da trn cu trc MOS nh sau:
+ Trn bn dn (bn dn nn B), ngi ta to ra 2 vng bn dn khc vi
bn dn nn. V d loi nn loi p, th to ra 2 vng bn dn loi n+ cch
nhau mt khong nht nh, 2 vng bn dn n ny c dn ra ngoi
thnh 2 in cc S v D.
+ Vng bn dn gia S v D hoc bng cch pha tp (MOSFET knh t
sn) hoc do thin p trong khi hot ng (MOSFET knh cm ng) bao
gi cng c loi ht dn o so vi . Vng ny c gi l vng knh
dn, nh vy tc l bao gi ta cng c mt chuyn tip p-n gia v
knh dn.
+ Pha trn knh dn ngi ta ph lp in mi mng (SiO
2
), v trn lp
in mi ny ph tip lp kim loi to ra in cc G ca MOSFET, G
c cch ly hon ton vi knh dn, tng t nh cu trc MOS.
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Trang 358
+ MOSFET thng c thm in cc th 4 gi l cc B (substrate), cc
(cc nn) ngn cch vi knh dn bng chuyn tip p-n nn cng c th
dng n nh mt cc iu khin na bn cch G. Tuy nhin tch cht iu
khin ca cc B thng khng c s dng v n thng c ni tt vi
cc ngun.
- Ngoi ra, MOSFET cn c phn loi theo cch to ra knh dn nh sau:
+ D-MOSFET (Deplection MOSFET): MOSFET knh t sn (MOSFET
kiu lm ngho). Knh dn c ch to sn l loi bn dn khc vi bn
dn nn. in p gia cc G v cc S lm ngho mt phn knh dn (tng
t nh JFET).
+ E-MOSFET (Enhancement MOSFET): MOSFET knh cm ng
(MOSFET kiu lm giu), knh dn cha c ch to trc. Knh dn s
c to ra khi in p t ln cc G thch hp v c gi tr ln hn in p
ngng no th s to lp o ht dn pha di cc cng, lp ht dn
o ny tng t nh mt knh dn ni cc S v D.
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Trang 359
Substrate (p)
n+ n+
Knh dn (n)
S D
G
B
Substrate (n)
p+ p+
Knh dn (p)
S D
G
B
D-MOSFET
Substrate (p)
n+ n+
S D
G
B
Substrate (n)
p+ p+
S D
G
B
E-MOSFET
G
D
S
B
G
D
S
G
D
S
B
G
D
S
G
D
S
B
G
D
S
G
D
S
G
D
S
B
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Trang 360
MOSFET cng sut cao
MOSFET v kim loi
MOSFET v nha
MOSFET v nha tng hp vi
u nhit kim loi
MOSFET v hon ton bng kim
loi
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Trang 361
6.4.2. Nguyn l lm vic ca MOSFET
- Nguyn l hot ng ca MOSFET knh loi N v knh loi P ging
nhau. Chng ch khc nhau v chiu ca ngun in cung cp l ngc
du nhau.
- MOSFET c phn cc sao gia (cc B) v knh to ra vng chuyn
tip ngho bao quanh knh dn, v dng cc ht dn a s i vo knh t
cc S v ra khi knh t cc D to ra dng I
D
.
- Nguyn l hot ng c bn ca MOSFET l cc cng G kt hp vi lp
in mi nm di n v knh dn bn dn nm di lp in mi chnh
l cu trc t in MOS. in p iu khin tc dng ln cc cng s to
ra mt in trng lm bin thin nng ht ti t do trong knh dn,
hoc thit din ca knh dn, dn ca knh s thay i. Dng in I
D
ph thuc v in p U
GS
v U
DS
. c tuyn quan trng ca MOSFET
cng l c tuyn ra v c tuyn truyn t tng t nh JFET.
- c tnh ca MOSFET v c bn tng t c tnh ca JFET nhng c
nhiu im u vit hn.
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Trang 362
a/ Nguyn l lm vic ca D-MOSFET
- Trong D-MOSFET bng cng ngh ch to sn knh dn bn di
cc G, in p cc G iu khin dng gia cc ngun v cc mng
bng cch lm ngho mt phn knh (thit din ca knh b thu
hp), tng t nh JFET. V khi D-MOSFET hot ng knh dn c
sn ng dn li nn D-MOSFET cn c gi l MOSFET thng
m.
- Thng thng cc nn B c ni tt vi cc ngun S. Ngun phn
cc sao cho chuyn tip PN gia cc bn dn nn v knh dn lun
phn cc ngc, dng ht a s ca knh dn i ra cc D.
a) D-MOSFET
knh N
b) D-MOSFET
knh P
D
E
G
+
E
D
+
R
D
G
S
U
GS
U
DS
I
D
D
E
G
+
E
D
+
R
D
G
S
U
GS
U
DS
I
D
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Trang 363
a/ Nguyn l lm vic ca D-MOSFET
D-MOSFET knh n lm vic theo 2 nguyn l sau:
+ Nguyn l tn hao: Khi U
GS
0, nhng in tch dng s c cm ng vo knh dn n,
nhng in tch dng ny trung ho bt in t trong knh n v hnh thnh mt vng chuyn
tip ngho ht dn ti knh ngay pha di cc G lm cho in tr ca knh tng ln, dng I
D
gim xung. U
GS
cng gim th vng chuyn tip cng m rng v I
D
cng gim. S thay i
in tr knh dn do cc ht dn mi cm ng ra bi in trng cc G trung ho bt ht
dn vn c ca knh do in tch tri du nhau ngha l lm tn hao ht n.
Vi U
GS
=const, khi U
DS
tng dn th vng chuyn tip PN gia B v knh phn cc ngc lan
su hn vo knh v vng chuyn tip ngho ht dn cng s m rng, knh s b tht dn v
pha cc D. c tuyn ra ca D-MOSFET cng tng t nh ca JFET. Cu trc MOS gia G
v knh lm vic trng thi chuyn tip
+ Nguyn l tng cng: Khi U
GS
>0, khi y di tc dng ca in trng cc G cc in t
c cm ng vo knh dn lm tng nng ca in t trong knh dn do lm gim in
tr sut ca knh. Nu U
GS
tng th I
D
cng s tng. Cu trc MOS gia G v knh lm vic
trng thi tch lu.
Vi U
GS
=const, khi U
DS
tng dn th vng chuyn tip PN gia B v knh phn cc ngc lan
su hn vo knh, v nng in t trong knh cng gim dn v pha cc D, nh vy knh
cng s b tht dn v pha cc D.
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Trang 364
+ D-MOSFET lm vic theo nguyn l lm vic tn hao
12
10
8
6
4
2
0
I
Dbh
Vng nh thng
(Avalanche Region)
2 4 6 8 10 12 U
DS
(V)
I
D
(mA)
U
GS
<0V
A
B
U
P
Vng bo ho
U
GS
<0
U
GS
<0
Substrate (p)
D S
G
B
n
n+ n+
(a)
+ + + +
Substrate (p)
D
S
G
B
U
DS
n+ n+
(b)
+
+ + +
Substrate (p)
D S
G
B
U
GS
<0
U
DS
=U
P
n+ n+
(c)
+
+ + +
Substrate (p)
D S
G
B
U
GS
<0
U
DS
>U
P
n
n+ n+
(d)
+
+ + +
Lp chuyn tip
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Trang 365
+ D-MOSFET lm vic theo nguyn l tng cng
12
10
8
6
4
2
0
I
Dbh
2 4 6 8 10 12 U
DS
(V)
I
D
(mA)
U
GS
>0V
A
B
Vng bo ho
Substrate (p)
D
S
G
B
U
GS
>0
U
DS
n+ n+
(b)
- - - - - --------
U
P
Substrate (p)
D S
G
B
U
GS
>0
U
DS
=U
P
n+ n+
(c)
- - - - - - -
Substrate (p)
D S
G
B
U
GS
>0
U
DS
>U
P
n
n+ n+
(d)
- - - -
Substrate (p)
S
G
B
U
GS
>0
n
n+ n+
(a)
- - - - - - - - - - -
Lp in tch
tch lu
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Trang 366
+ Cc h c tuyn ca D-MOSFET knh n
Vng Ohmic
max 0
2
0
1
GS GS GS
GS
GS
DSS D
U U U khi
U
U
I I s s
|
|
.
|
\
|
=
3 2 1 0 U
GS
(V)
U
GS0
I
DSS
I
D
(mA)
2 4 6 8 10 12 U
DS
(V)
I
D
(mA)
U
GS
= +1V
U
GS
= 0 V
1,0 V
2 V
A
B
U
P
I
DSS
U
GS0
I
Dmax
I
Dmax
Ch
ngho hd
Ch
giu hd
Ch
ngho
hd
Ch
giu
hd
U
GSmax
Vng bo ha
0
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Trang 367
+ Cc h c tuyn ca D-MOSFET knh p
U
GS0
I
DSS
I
D
(mA)
I
Dmax
U
GS
0 1 2 -1
U
GS
= -1V
U
GS
= 0 V
1,0 V
2 V
U
GS0
I
DSS
I
Dmax
I
D
(mA)
U
DS
V
n
g

O
h
m
i
c
0 min
2
0
1
GS GS GS
GS
GS
DSS D
U U U khi
U
U
I I s s
|
|
.
|
\
|
=
U
GSmin
Vng bo ha
0
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Trang 368
b/ Nguyn l lm vic ca E-MOSFET
- Trong E-MOSFET (MOSFET knh cm ng, MOSFET kiu lm giu ht dn)
khng c sn knh dn gia S v D m knh dn ny s c to ra khi t
in p ln cc cng thch hp ln hn gi tr in p ngng no U
T
th s
c s to thnh lp o ht dn ngay di cc cng to thnh knh dn ni
gia S v D (tng t nh cu trc MOS trong trng thi o). V knh dn ch
c to ra khi c in p trn cc G nn loi MOSFET ny cn gi l
MOSFET thng m.
- Thng thng cc nn B c ni tt vi cc ngun S. Ngun phn cc sao
cho to thnh lp o ht dn ti bn dn nn, dng ht a s ca knh dn i
ra cc D.
b) E-MOSFET
knh P
a) E-MOSFET
knh N
D
E
G
>0
+
-
E
D
+
R
D
G
S
U
G
S
U
D
S
I
D
D
E
G
<0
-
+
E
D
+
R
D
G
S
U
GS
U
DS
I
D
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Trang 369
+ c tuyn ra ca E-MOSFET knh n
Substrate (p)
D S
G
B
U
GS
>U
T
>0
(a)
n+ n+
- - - - - - - - -
- - - - -
Lp chuyn tip
Lp o - -
- -
(c)
(b)
Substrate (p)
D S
G
B
U
GS
>U
T
>0
n+ n+
- - - - - - - - -
- - - - -
- -
- -
U
DS
U
T
>0
n+ n+
- - - - - -
-
- - - - -
- -
- -
U
DS
=U
p
Substrate (p)
D S
G
B
U
GS
>U
T
>0
(d)
n+ n+
- - -
-
-
- - - -
- -
- -
U
DS
>U
p
+
12
10
8
6
4
2
0
I
Dbh
Vng nh thng
(Avalanche Region)
2 4 6 8 10 12 U
DS
(V)
I
D
(mA)
U
GS
>U
T
A
B
U
P
Vng bo ho
(Pinchoff Region)
V
n
g

O
h
m
i
c
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Trang 370
+ Cc h c tuyn ca E-MOSFET knh n
+ Khi U
GS
U
p
th I
D
=I
Dbh
=const
+ Biu thc tnh I
D
theo U
GS
ti vng bo ho thng c tnh nh sau:
2
) .(
T GS D
U U k I =
H c tuyn
truyn t
H c tuyn ra
k: hng s knh.
ox
2.L
W
C k
n
=
W, L rng v
chiu di ca G
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Trang 371
+ Cc h c tuyn ca E-MOSFET knh p
2
) .(
T GS D
U U k I =
S
-U
DS
+ Khi U
GS
>U
T
- in p ngng, knh b kho hon ton (cha hnh
thnh knh cm ng): I
D
= I
Dbh
=0.
+ Khi U
GS
U
p
th I
D
=I
Dbh
=const
+ Biu thc tnh I
D
theo U
GS
ti vng bo ho thng c tnh nh sau:
ox
2.L
W
C k
p
= C
ox
: in dung ca MOS
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Trang 372
Bng so snh c tuyn truyn t ca cc cu kin FET
2
) .(
T GS D
U U k I =
2
0
) 1 (
GS
GS
DSS D
U
U
I I =
2
0
) 1 (
GS
GS
DSS D
U
U
I I =
U
GS0
U
GS0
/2
U
GS0
U
T
2
) (
) (
) (
T on GS
on D
U U
I
k
=
I
DSS
U
GS0
I
DSS
U
GS0
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Trang 373
6.4.3 nh thin cho MOSFET
- Vi MOSFET lm vic ch xung s thng c phn p chng
lm vic vng c tuyn kho hon ton v vng ohmic hoc gn bo
ho.
- Khi MOSFET lm vic ch tch cc (ch khuch i tn hiu) th
chng c nh thin lm vic vng c tuyn bo ho.
- Trong phn ny ch yu tnh ton mch nh thin MOSFET lm vic
ch tch cc.
- Khi tnh ton mch nh thin s dng cc gi thit sau: I
G
=0, Khi
U
GS
=const, dng I
D
=I
DSbh
=const mc d U
DS
thay i.
a. Cc cch nh thin cho D-MOSFET:
+ a.1/ T nh thin
+ a.2/ nh thin cc cng
+ a.3/ nh thin bng mch phn p
b. Cc cch nh thin cho E-MOSFET
+ b.1/ nh thin bng mch hi tip
+ b.2/ nh thin bng mch phn p
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Trang 374
a.1/ Mch t nh thin D-MOSFET
I
DSS
=8mA
U
GS0
=-8V
R
D
E
D
R
S
R
G
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Trang 375
Xc nh im lm vic Q
U
GS0
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Trang 376
a.2/ nh thin bng mch phn p cho D-MOSFET
I
DSS
=6mA
U
GS0
=-3V
U
GS0
U
GS0
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Trang 377
a.3/ nh thin cc G c nh
R
D
E
G
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Trang 378
b.1/ nh thin cho E-MOSFET bng mch hi tip
IG = 0
UGS = UDS
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Trang 379
+ c tuyn truyn t
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Trang 380
b.2/ nh thin cho N E-MOSFET dng mch phn p
| |
|
\ .
2
G DD
1 2
Don
2
GSon GSTH
2
D GS GSTH
R
V = V
R +R
I
k =
(V - V )
I = k(V - V )
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Trang 381
b.2/ nh thin cho N E-MOSFET dng mch phn p
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Trang 382
6.5. M hnh tng ng ca MOSFET
a/ M hnh tng ng mt chiu v tn hiu ln
b/ M hnh tng ng tn hiu nh
Xt trng hp cc S v B ni tt
www.ptit.edu.vn
Trang 383
K.I
DSS
R
GS
U
GS
+
-
U
DS
+ M hnh tng ng D-MOSFET lm vic vng bo ho
K.I
DSS
R
GS
U
GS
-
+
U
DS
+ M hnh tng ng D-MOSFET lm vic vng ohmic
U
GS
R
GS
+
-
U
DS
R
DS
R
GS
U
GS
-
+
U
DS
R
DS
2
0
1
|
|
.
|
\
|
=
GS
GS
U
U
K
2
0
1
|
|
.
|
\
|
=
GS
GS
U
U
K
Dbh
p
DS
I
V
R =
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Trang 384
U
GS
I
D
R
GS
+
-
U
DS
+ M hnh tng ng E-MOSFET lm vic vng bo ho
.I
D
R
GS
U
GS
-
+
U
DS
+ M hnh tng ng E-MOSFET lm vic vng ohmic
U
GS
R
GS
+
-
U
DS
R
DS
R
GS
U
GS
-
+
U
DS
R
DS
Dbh
p
DS
I
V
R =
2
) .(
T GS D
U U k I =
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Trang 385
b/ M hnh tng ng tn hiu nh tn thp
- M hnh tng ng tn hiu nh ca MOSFET xc nh mi quan h
gia tn hiu xoay chiu bin nh trong JFET: i
d
, u
gs.
- Cc phng trnh c tnh tng ng xc nh cc m hnh tng
ng ca MOSFET:
+ Tng qut :
ds d gs m ds
Q
DS
gs
Q
GS
d
u g u g u
u
f
u
u
f
i + =
c
c
+
c
c
=
) , ( ) , (
ds DS gs GS d D DS GS D
u U u U f i I u u f i + + = + = =
+ Gi s im lm vic Q(U
GS
,U
DS
,I
D
)
+ g
m
- h dn vo, g
d
- h dn ra
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Trang 386
M hnh tng ng tn hiu nh tn thp ca D-MOSFET
D
An
d
Q
D
DS
d o
I
V
g i
u
r r = =
c
c
= =
1
+ in tr vi phn u ra:
g
m.
u
gs
r
d
D
S
G
g
m.
u
gs
r
d
D
S
G
0 0 0
. 2
1
2
GS
DSS DS
GS
GS
GS
DSS
m
U
I I
U
U
U
I
g
=
|
|
.
|
\
|
=
An
D
An
Q
GS
GS
DSS
Q
DS
DS
d
V
I
V U
u
I
u
i
g =
|
|
.
|
\
|
=
c
c
=
1
1
2
0
+ h dn ra :
0
0
2
GS
DSS
m
U
I
g

=
|
|
.
|
\
|
=
0
0
1
GS
GS
m m
U
U
g g
+ M hnh tng ng tn hiu nh tn thp ca D-MOSFET
G
D
S
G
D
S
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Trang 387
g
m.
u
gs
r
d
D
S
G
g
m.
u
gs
r
d
D
S
G
+ M hnh tng ng tn hiu nh tn thp ca E-MOSFET
) (
. 2
T GS
D
Q
GS
m
U U
I
u
f
g
=
c
c
=
G
D
S
G
D
S
: H s iu ch
chiu di knh
D d
Q
D
DS
d o
I g i
u
r r
.
1 1
= =
c
c
= =
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Trang 388
CHNG 7.
THYRISTORS
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Trang 389
7.1. Gii thiu chung
- Thyristors l mt h cu kin bn dn cng sut, c s dng nhiu trong lnh
vc in t cng sut, iu khin cng sut, iu khin ngun in, iu khin tc
t, iu khin n tt - sng, iu khin m t in mt chiu v.v...
- Thyristors l h cu kin bn dn c cu to t bn lp bn dn, v d nh p-
n-p-n, to ra ba lp tip gip p-n:J1,J2,J3 v c th c 2, 3 hoc 4 chn cc, c th
dn in 1 chiu hoc c 2 chiu.
- y l loi cu kin hot ng trng thi bn l kha v trng thi m ty
thuc vo tnh hi tip dng ca 4 lp bn dn p-n-p-n
- H Thyristor c nhiu loi cu kin khc nhau, in hnh nh:
+ SCR (The Silicon Controlled Rectifier): Cu kin chnh lu Si c iu khin.
+ TRIAC (Triode Alternative Current): Cu kin chnh lu 2 chiu.
+ DIAC (Diode for Alternating Current).
+ GTO (Gate turn-off thyristor).
+ FET-CTH (FET-controlled Thyristor).
+ IGCT (Integrated Gate Commutated Thyristor) .
+ MTO (MOS turn-off Thyristor)
+ IGBT (Insulated Gate Bipolar Transistor)
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Trang 390
7.2. SCR Cu kin chnh lu Si c iu khin
7.2.1 Cu to ca SCR
7.2.2 Nguyn l lm vic
7.2.3 c tnh ca SCR
7.2.4 ng dng
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Trang 391
7.2.1 Cu to ca SCR
- SCR l mt cu kin quan trng
trong h Thyristors, SCR hay cn
c gi l h cu kin chnh lu c
iu khin thng c lm t vt
liu Si nn cn gi l cu kin chnh
lu Si c iu khin (SCR-The Silicon
Controlled Rectifier Devices).
- SCR cu to t bn lp bn dn p-n-
p-n (gi l P1-N1-P2-N2), to ra ba
lp tip gip p-n: J1,J2,J3, c ba cc:
anode A, cathode K, cc cng iu
khin G ni vo P2.
- C 2 loi: SCR quy c (Gi tt l
SCR) v SCR kiu b (Cc G ni vo
N1, loi ny t c dng).
J1 J2 J3
P1
N1
P2 N2
P1 N1
P2 N2
J1 J2 J3
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Trang 392
- SCR c th c coi
nh tng ng 2
BJT: PNP v NPN
mc nh hnh v.
- xt nguyn l hot
ng ca SCR, xt
mch nh hnh v:
I
A
I
K
U
G
I
B2
I
G
Min dn thun
Min chn thun
Min chn
ngc
0
I
G3
Min nh thng ngc
I
L
I
H
I
G3
N1
N1
P2
P2 N2
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Trang 393
c tuyn V-A th hin hot ng ca SCR nh hnh v v c chia thnh
4 vng r rt:
1. Phn cc ngc U
AK
<0, SCR c th coi nh l 2 it phn cc ngc
mc ni tip J1, J3. Khi U
AK
cng gim th dng qua SCR nhanh chng
bng dng bo ha ngc (bng dng bo ha ngc ca cc it), SCR
lm vic Min chn ngc hay trng thi kha OFF.
Nu gim U
AK
qu nh (U
AK
<-U
BR
) th 2 chuyn tip J1,J3 b nh thng
theo c ch thc l v xuyn hm, dng nh thng tng vt c th lm
hng SCR. Vng lm vic ny gi l Min nh thng ngc.
2. Phn cc thun U
AK
>0, Xt cc trng hp sau:
a. Cc G h, I
G
=0, J1, J3 phn cc thun, J2 phn cc ngc, khi U
AK
cn
nh dng I
A
,I
K
nh v c quyt nh ch yu bi dng bo ha ngc
ca J2, I
D
=I
A
=I
K
c gi l dng d thun, SCR lm vic Min chn
thun (hay SCR ch tr khng cao, trng thi kha OFF).
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Trang 394
- Nu tng dn U
AK
ln n in p nh thng tip xc J
2
th dng in qua
SCR tng vt. Lc ny c 3 tip xc P-N u coi nh c phn cc thun,
in tr ca chng rt nh lm cho st p trn SCR gim hn xung cn
khong t 1 2 V. Lc ny SCR chuyn t trng thi kha sang trng
thi m ON, hay trng thi dn in hoc ch tr khng thp, min
lm vic ca SCR gi l Min dn thun. Phng php m SCR bng
cch tng in p phn cc thun U
AK
gi l phng php kch m.
- Trong trng thi m, dng in qua SCR c hn ch nh in tr mc
mch ngoi v I
A
>I
L
- dng cht (dng in nh nht trn Ant yu cu
duy tr SCR trng thi m), nh vy khi SCR chuyn sang trng thi m
th khng cn dng iu khin I
G
. Tr s in p m ti xy ra nh
thng tip xc J
2
c gi l in p nh khuu U
BF
- cn c gi l in
p kch m.
- Nh vy, khi SCR dn in th dng in qua n khng th iu khin
c nu dng I
A
ln.
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Trang 395
- Theo s tng ng, khi tng U
AK
ti gi tr nht nh lm dng
ngc I
C1
tng (khi J2 bt u b nh thng), m I
B2
= I
C1
,
,
khi I
C1
ln
hn dng m cho Q2 th Q2 s m lm cho I
C2
tip tc tng, m I
B1
=
I
C2
,
,
nh vy I
C1
tip tc tng, qu trnh ny xy ra theo mt vng kn,
kt qu l d iu kin gy ra s nh thng J2 mt i (khi U
AK
gim)
th qu trnh cng vn t ng dn ti Q1, Q2 m hon ton, ngha l
SCR m hon ton.
- Khi SCR m hon ton th nu in p phn cc thun U
AK
gim
nh hn in p kch m th dng I
A
cng gim nhng SCR vn m, v
SCR ch ngng dn khi dng in I
A
b gim xung di tr s dng
in I
H
- gi l dng in duy tr v tng ng vi dng I
H
ta c in p
duy tr U
H
.
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Trang 396
b. Cc G c dng iu khin, I
G
=0:
- Nu in p thun t vo SCR U
AK
nh hn mc in p kch m
U
BF
, v gia cc G v K c t in p U
G
>0, to ra dng I
G
ln
lm m Q2, v qu trnh xy ra theo mt vng kn tng t nh trn v
lm cho Q1 m nh vy SCR c m hon ton.
- in p m SCR U
G
thng l mt xung c bin ln, sau khi
SCR m m gi nguyn trng thi ny cho d xung m U
G
khng cn
na, mun cho SCR chuyn t trng thi m sang trng thi kha phi
lm cho dng I
B1
, I
B2
gim nh hn dng m ca Q1, Q2, iu ny c
th thc hin c bng 2 cch sau:
+ Gim nh in p thun U
AK
, do I
A
s gim dn ti IB2 gim nh
hn dng m ca Q2 lm cho Q2 kha, dng I
C2
=I
B1
cng gim i lm
cho Q1 kha, kt qu l SCR kha hon ton.
+ To in p U
G
<0, lm cho I
B2
gim lm cho Q2 kha, dn ti Q1
cng kha, do SCR cng kha hon ton.
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Trang 397
- Nu ta tng dng iu khin I
G1
< I
G2
< I
G3
th in p nh khuu U
BF
cng gim t U
BF1
n U
BF2
v khi I
G
= I
G3
th SCR dn in nh mt
it.
- Khi U
AK
thun tng ln th dng iu khin cn thit khi ng SCR
s gim xung.
Ch : Khi SCR kha, mun n m tr li c th thc hin bng 2 cch:
+ Tng in p phn cc thun U
AK
vt qu gi tr in p kch m
+ Kch khi bng xung iu khin m U
G
>0.
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Trang 398
- Tnh dng I
A
, I
K
trong trng thi m:
+ Theo s mch tng ng ca SCR ta thy, khi SCR dn in th
qua n c dng in t A n K v gia cc tip xc P-N ca 2 BJT Q
1
v
Q
2
c cc dng in vo v ra:
I
C1
= I
B2
v I
C2
= I
B1
M dng collector ca mi BJT l : I
C1
= o
1
I
A
+ I
CBo1
I
C2
= o
2
I
K
+ I
CBo2
Trong o
1
v o
2
l h s khuch i thc l alpha (s nhn thc l).
+ Dng in tng qua SCR l:
I
A
= I
C1
+ I
C2
= o
1
I
A
+ o
2
I
K
+ I
CBo1
+ I
CBo2
(1)
Trong ta c: I
CBo1
+ I
CBo2
= I
CBo
I
CBo
l dng in ngc bo ha ca tip xc J2.
+ Mt khc I
K
=I
A
+I
G
thay vo (1) v rt gn ta c:
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Trang 399
I
A
= (o
2
I
G
+ I
CB0
)/[1-(o
1
+ o
2
)]
+ Nu I
G
=0 ta c :
I
A
= I
CB0
/[1-(o
1
+ o
2
)]
+ H s khuch i ca hai BJT h nn nh. Nh vy, trng thi dn bn
vng t c l do c hai BJT ri vo ch bo ho t c iu
kin o
1
+ o
2
= 1.
+ Nh vy, khi o
1
+ o
2
= 1 th dng in tng vt v khng iu khin
c, n tng ng vi tip xc J
2
phn cc thun. Lc ny, SCR dn
in v c ngha l c hai BJT Q
1
v Q
2
u dn bo ha, tng ng
vi SCR ch m "ON".
+ Trn thc t, khi t in p U
AK
no ln SCR th ch c dng in
ngc chy qua SCR, cn dng iu khin I
G
s to ra mt thnh phn
dng in m khi tng cc h s khuch i kiu thc l ca dng in
o
1
+o
2
1 th SCR s khi ng.
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Trang 400
+ Khi cho mt dng in vo cc iu khin G, n c th tng h s o
(h s tng kiu thc l) m khng ph thuc vo in p v dng in.
Nh vy, dng I
G
c tc dng gia tng ht dn thiu s (in t) cho
lp bn dn P
2
cho tip xc J
2
b thng sm hn. Tu theo tr s ca
dng I
G
m in p nh thng tip xc J
2
v tr s dng in duy tr I
H
thay i. Khi I
G
c gi tr cng ln th U
BF
cng nh v I
H
cng nh.
- V d mch chnh lu c iu khin pha minh ha hot ng ca SCR:
U
v
U
t
U
G
Rt
et
U
V
et
U
G
et
U
t
o
o
t
t
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Trang 401
7.2.3 c tnh ca SCR
- Thi gian m v tt rt nhanh (vi s n chc s).
- Cng dng cho php cao (hng nghn Ampe).
- in p lm vic cao (hng nghn Vn).
- St p gia 2 cc nh (t 1 2V).
- Kh nng iu khin tt.
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Trang 402
7.3. TRIAC Triode Alternative Current
7.3.1 Cu to ca TRIAC
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Trang 403
7.3.1 Cu to ca TRIAC
- TRIAC (TRIode for Alternating Current) l phn t bn dn gm nm
lp bn dn, to nn cu trc p-n-p-n nh SCR theo c hai chiu gia
cc cc A1 v A2, do c th dn dng theo c hai chiu gia A1 v
A2. TRIAC c th coi tng ng vi hai SCR mc song song ngc
nhau.
A2
A2
G
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Trang 404
- c tnh Volt-Ampere ca TRIAC bao gm hai on c tnh gc phn t
th nht v th ba, mi on u ging nh c tnh thun ca mt SCR.
- Phng php kch khi cho TRIAC:
+ Cc G dng v cc A2 dng hn so vi A1
+ Cc G m v cc A2 m hn so vi A1
I
A
U
A2A1
U
G
U
A2A1
R
I
A
- TRIAC cho qua 2 na chu k
ca mt in p xoay chiu v
iu khin bng mt cc iu
khin G.
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Trang 405
7. 4. DIAC Diode for Alternating Current
- DIAC c cu to hon ton ging
TRIAC nhng khng c cc iu
khin G.
- DIAC c kch m bng cch tng
in p t vo 2 cc.
- c tuyn ca DIAC tng t ca
TRIAC trong trng hp I
G
=0.
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Trang 406
7.5.GTO (Gate turn-off thyristor)
- GTO c cu to tng t nh SCR, cng c 4 lp
bn dn p-n-p-n, nhng cu to c bit sao cho s
tng ng vi 2 BJT Q1, Q2 c khuch i
dng | kh nh.
- V GTO vi cu to 2 BJT c | kh nh nn khi mun kch cho GTO
kha th phi to ra mt in p phn cc m trn G ko dng I
C2
t
cc cng ra lm kha Q1, v ko Q2 kha theo.
- Nguyn tc ny ch p dng cho GTO m khng p dng cho SCR v
SCR c ch to vi 2 BJT c | rt ln nn dng I
G
kch m c gi tr
nh nhng dng kch SCR kha cn I
G
ngc kh ln, iu ny kh
thc hin trong mch iu khin.
- i vi GTO thc hin c nguyn l kch kha ngi ta ch ch
to cc loi GTO cng sut trung bnh c dng I
A
v I
G
khng ln
lm. G
OFF
=I
A
/I
GOFF
~ 10
G
A
K
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Trang 407
7.6.TRANSISTOR N NI (UJT - UNITJUNCTION TRANSISTOR)
Cu to ca transistor n ni.
UJT l linh kin bn dn c mt tip xc P-N v 3 chn cc. N gm mt
thanh bn dn Silic loi N c gn thm 1 ming bn dn Silic loi P to
thnh mt tip xc P-N.
Chn cc ni vi mu bn dn P gi l cc pht E. Hai u cn li ca
thanh Silic loi N c a ra 2 chn cc gi l Nn 1 ( k hiu B1) v
Nn 2 (k hiu B2).
B
2
B
2
B
2
R
B2
Si(p) Thanh
E Si(N) E D
E 0
R
B1
B
1
B
1
B
1
+
+
U
BB
B
2
B
1
U
E
+
R
E
U
EE
c/
Hnh 6- 10: a) Cu to; b) k hiu; c) S nguyn l; d) s
tng ng ca UJT ; e) b tr chn cc ca UJT
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Trang 408
Nguyn l lmvic ca UJT.
Trong s tng ng, it c thay th cho tip xc P-N; R
B1
l in tr
ca phn bn dn nn 1; R
B2
l in tr ca phn bn dn nn 2.
cho tranzito n ni hot ng, cp in p dng cho B
2
so vi B
1
(U
BB
> 0).
Nh vy, nu h mch cc pht th R
B1
v R
B2
l b phn p cho ngun U
BB
. Do
, in p ti imO s l:
BB B 1
0
B 1 B 2
U R
R R
BB
U U q = =
+
B 1
B 1 B 2
R
R R
q =
+
q gi l h s thun
khit
-Nu U
E
< q U
BB
(U
E
 q U
BB
, tip xc P-N c phn cc thun, dng I
E
tng dn. Khi U
E
> U
P
(U
p
gi l in p kch khi cho UJT hot ng hay gi l in p nh) th dng
I
E
tng nhanh. Di tc dng ca in trng, cc l trng chuyn ng t cc
pht E xung Nn 1 (B
1
), cn cc in t chuyn ng t Nn 1 n phn pht
to nn dng in I
E
. Do s gia tng t ca cc ht dn trong Nn 1 nn in
tr R
B1
gim trong khi dng in I
E
tng v in p U
E
gim nn ta c vng in
tr mca c tuyn vn- ampe.
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Trang 409
c tuyn Vn- Ampe biu th quan h gia dng in cc pht I
E
vi in p trn
cc pht U
E
. Mi quan h ny c biu din bng hm I
E
= f(U
E
)
Nu cc nn 2 (B
2
) h mch, ngha l dng I
B2
=0 th quan h V-A li vo l c
tuyn V-A ca tip xc P-N:
v ta c ng c tuyn ng vi I
B2
=0 trong hnh
Qua hnh 6-10 ta thy, khi thay i in p t ln gia nn 1 v nn 2 (U
BB
) th in
p nh (U
P
) cng thay i theo v a c tuyn dch ln trn.
Ti vng in tr m, dng in ch b gii hn bi cc linh kin mc mch ngoi,
do mch ngoi phi bo m dng in I
E
< I
Emax
Khi I
E
tng n I
V
, mun tng thm dng I
E
ln na ta buc phi tng U
E
v s lng
l trng v in t t n tnh trng di chuyn bo ha, c tuyn chuyn sang
vng in tr dng.
U
E
(V)
14
12
10
8
6
4
2
U
P
U
V
I
E
(mA)
U
BB
=5V
I
B2
=0
U
BB
=10V
U
BB
=20V
U
BB
=30V
T=25
0
C
0 2 4 6 8 10 12 14 16
I
P
I
E0
Hnh 6-11: c tuyn Vn Ampe ca
UJT
|
|
.
|
\
|
= 1 e I I
T
V
E
U
0 E E
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Trang 410
CHNG 8.
CU KIN QUANG
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Trang 411
Ni dung
1 Gii thiu chung
2. S tng tc gia vt cht v nh sng
3. Vt liuquang
4. Cc cu kin chuyn i in - quang
4.1 it pht quang (LED)
4.2 Mt ch th tinh th lng (LCD)
5. Cc cu kin chuyn i quang - in
4.1 in tr quang
4.2 it quang
4.3 Transisto quang lng cc
6 Thyristor quang
7. T bo quang in v pin mt tri
8. Cc sensor quang:Cu kin CCD, ...
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Trang 412
8.1. Gii thiu chung
1. Khi nim chungv k thut quangin t.
a. nh ngha v k thut quang in t:
Quang in t l nhng hiu ng tng h gia bc x nh sng v mch in
t. Bc x nh sng l mt dng ca bc x in t c di tn s dao ng rt
Cao(: khong 50nm n khong 100m).
Ccbc x quangc chiarathnhbavngl:
Vng cc tm c = 50nm 380nm.
Vng nh sng nhn thy c = 380nm 780nm.
Vng hng ngoi c = 780nm 100m.
b. Phn loi linh kin quang in t:
Linh kin quang in t gm c linh kin bn dn quang in t v linh
kin khng bn dn quang in t.
Linh kin bn dn quang in t: l nhng linh kin c ch to t vt
liu bn dn nh in tr quang, it quang, tranzito quang, LED, LASER
bn dn,v.v..
Linh kin khng phi bn dn quang in t: nh si quang dn, mt ch
th tinh th lng LCD, ng nhn quang v.v..
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Trang 413
2. H thng truyn dn quang
S khi ca cc h thng thng tin:
8.1. Gii thiu chung
Mch in
t
Khi iu
ch
Mch in
t
Khi gii
iu ch
Si ng Mch pht
tn hiu
Mch thu
tn hiu
a) H thng thng tin in
Mch in
t
Khi bin
i E-O
Mch in
t
Khi bin
i O-E
Si quang
Mch thu
tn hiu
b) H thng thng tin quang
Mch pht
tn hiu
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Trang 414
8.2. CC CU KIN BIN I IN QUANG (Cu kin pht quang)
8.2.1. S tng tcgia nhsngvvt cht
S tng tc gia nh sng v vt cht gm c 3 qu trnh: qu trnh hp
th, qu trnh pht x t pht v qu trnh pht x kch thch (Xem hnh 8
2a,b,c).
k i
E E hf =
E
i
: Mc nng lng kch thch

a) Qu trnh hp th b) Qu trnh bc x t pht c) Qu trnh bc x kch thch
hf
ik
hf'
ik
E
i
E
k

hf
ik
E
k
E
i

hf
ik
E
k
E
i
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Trang 415
- Qu trnh hp th:
Qu trnh hp th (hnh 8-2a) l qu trnh m ti khi c mt photon tng tc
vi vt cht th mt in t mc nng lng c bn E
k
s nhn thm nng
lng ca photon (quang nng) v nhy ln mc nng lng kch thch E
i
.
- Qu trnh pht x t pht:
Bc x t pht (hnh 8-2b) l qu trnh m cc in t nhy ln mc nng lng
kch thch E
i
, nhng chng nhanh chng tr v mc nng lng c bn E
k
v
pht ra photon c nng lng h. Mi mt pht x t pht ta thu c mt
photon.
Hin tng ny xy ra khng c s kch thch bn ngoi no v c gi l qu
trnh pht x t pht. Pht x ny ng hng v c pha ngu nhin.
- Qu trnh pht x kch thch:
Nu c mt photon c nng lng h ti tng tc vi vt cht m trong lc
c mt in t ang cn trng thi kch thch E
i
, th in t ny c kch
thch v ngay lp tc n di chuyn tr v mc nng lng c bn E
k
v pht x
ra mt photon khc c nng lng cng ng bng . Photon mi pht x ra ny
c cng pha vi photon i n v c gi l pht x kch thch (hay pht x
cm ng). Xem hnh 8-2c.
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Trang 416
8.2.2. Vt liu bn dn quang
- Vt liu bn dn quang ch yu l cc loi hp cht bn dn 2 thnh phn
nhm III-V v nhm II-V, hp cht bn dn 3 v 4 thnh phn.
- Cht bn dn 2 thnh phn nhm III-V: c s dng ph bin trong
cc ng dng quang in t do n l bn dn c vng cm trc tip (vng
cm thng): Bn dn c y ca vng dn v nh ca vng ha tr cng
nm trn mt gi tr s sng (trong khng gian ng lng) Loi bn dn
ny c c tnh quang tt, in t ti gn y ca vng dn c th d dng
ti hp trc tip vi l trng gn nh ca vng ha tr, nng lng ti hp
c th c pht x ra photon nh sng (hin tng ti hp bc x hay bc
x t pht.
+ Cht bn dn 2 thnh phn nhm II-V c hnh thnh bi s t hp
gia nguyn t nhm III nh Al, Ga, In vi nguyn t nhm V nh N, P,
As, Sb. C 9 loi hp cht bn dn 2 thnh phn ph bin nh sau: AlP,
AlAs, AlSb, GaP, (GaAs, GaSb, NnP, InAs, InSb) vng cm thng).
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Trang 417
+ Hp cht bn dn 3 thnh phn: c hnh thnh t 2 nguyn t ca
nhm III vi 1 nguyn t nhm V hoc t 1 nguyn t nhm III vi 2
nguyn t ca nhm V: v d Al
x
Ga
1-x
As (c tnh cht nm gia AlAs
v GaAs ph thuc vo t l trn cc thnh phn x t s ca cc
nguyn t Ga trong GaAs c thay th bi cc nguyn t Al.
+ Hp cht bn dn 4 thnh phn: Hp cht c hnh thnh t 2
nguyn t nhm III vi 2 nguyn t nhm V, loi bn dn ny c s t
hp mt cch d dng, tt hn so vi bn dn 3 thnh phn, v chng
cung cp mt t do ln hn. V d In
x
Ga
1-x
As
1-y
P
y
, t l trn.cc
thnh phn x, y thay i gia 0 v 1.
- th biu din hng s mng, nng lng vng cm, tn s ct ca
mt s loi bn dn n, hp cht 2 thnh phn, 3 thnh phn v 4
thnh phn nh trang bn:
- (Vi bn dn c rng vng cm l E
G
th tn s ct (hoc bc sng
ct) l:
C
=hc/E
G
, trong c l vn tc nh sng.
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Trang 418
8.2.3. it pht quang (LED) ch th
it pht quang l linh kin bn dn quang in t. N c
kh nng pht ra nh sng khi c hin tng ti hp xy ra
trong tip xc P-N.
Tu theo vt liu ch to m ta c nh sng bc x ra cc
vng bc sng khc nhau.
Trong mc ny ta s trnh by trc ht v LED bc x ra nh
sng nhn thy gi l LED ch th. LED ch th c u im l
tn s hot ng cao, kch thc nh, cng sut tiu hao nh,
khng st p khi bt u lm vic. LED khng cn knh lc m
vn cho ra mu sc. LED ch th rt r khi tri ti. Tui th ca
LED khong 100 ngn gi.
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Trang 419
a. Cu to vkhiu ca LED:
Vt liu ch to it pht quang u l cc lin kt ca cc
nguyn t thuc nhm 3 v nhm 5 ca bng tun hon
Menlep nh GaAs, hoc lin kt 3 nguyn t nh GaAsP v.v..
y l cc vt liu ti hp trc tip, c ngha l s ti hp xy ra
gia cc in t st y di dn v cc l trng st nh di
ha tr.

Chuyn tip PN
A K
P N
A
K
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Trang 420
n type
substrate
p type
epitaxial layer
ohmic contacts
Light output
Planar LED
Light output
n
diffused
p-type
ohmic
contacts
Dome LED
LED vm v LED phng c s dng trong phn ln cc thit b
hin th vi li ch l rt c lng nh sng cc i t thit b =>
nh sng c pht ra theo tt c cc hng v s dng cc ng knh
c sp xp theo trt t nht nh hi t nh sng.
Burrus LED v LED pht x cnh ch yu c dng trong cc h
thng thng tin si quang
Cc cu trc ca LED:
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Trang 421
b. Nguynllmvic:
Khi LED phn cc thun, cc ht dn a s khuch tn t qua tip
xc P-N, chng gp nhau s ti hp v cc photon c pht sinh.
Tc ti hp trong qu trnh bc x t pht ny t l vi nng
in t trong phn bn dn P v nng l trng trong phn bn dn
N. y l cc ht dn thiu s trong cht bn dn. Nh vy, tng s
photon bc x ra cn phi gia tng nng ht dn thiu s trong cc
phn bn dn.
Cng dng in ca it t l vi nng ht dn c "chch"
vo cc phn bn dn, do cng pht quang ca LED t l vi
cng dng in qua it
+
LED
Vin
-
R
Vout
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Trang 422
in p phn cc cho LED gn bng rng vng cm ca vt
liu, do , cc LED bc x cc bc sng khc nhau s c
ch to t cc vt liu bn dn c rng vng cm khc nhau v
in p phn cc cho chng cng khc nhau.
Tuy nhin LED c in p phn cc thun tng i cao (1,6 v
3 v) v c in p ngc cho php tng i thp (3 v 5 v)
c tuyn Vn - Ampe ca LED:
c tuyn Vn - Ampe ca it pht quang biu din mi quan h
gia dng in quang vi in p t ln LED.
I
U
AK
0
D U
ngc max U
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Trang 423
Mt s loi LED ch th:
LED n: linh kin mt LED.
LED i: dng cho nhng ng dng c bit
a)Cu trc ca LED 7 on a)Cu trc ca LED 7 on A chung
a
b
c
d
e
f
g
A
a
e
b
g
c
d
f
1 2
3
LED 1 LED 2
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Trang 424
8.2.4. LED hng ngoi
Cc h thng thng tin quang yu cu tc bit xp x 100 n 200Mbit/s cng
si quang a mt vi cng sut quang khong vi chc W th cc it pht
quang bn dn thng l cc ngun sng tt nht.
Cu to ca LED hng ngoi c bn l ging cc LED ch th. bc x nh
sng hng ngoi, LED hng ngoi c ch to t vt liu Galium Asenit
(GaAs) vi rng vng cm E
G
= 1,43 eV tng ng vi bc x bc sng
khong 900nm.
Hnh 8- 8 m t cu trc ca mt LED hng ngoi bc x nh sng 950nm.
-Do c im cu to c bit nn LED hng ngoi
to ra nh sng nm trong vng hng ngoi. Ngoi
ra, nhng tia c hng i vo trong lp bn dn s
gp gng phn chiu v b phn x tr li i ra
ngoi theo cng mt hng. Vic ny s tng hiu
sut mt cch ng k cho LED.
Tia hng ngoi c kh nng xuyn qua cht bn dn tt
hn so vi nh sng nhn thy nn hiu sut pht ca
LED hng ngoi cao hn rt nhiu so vi LED pht nh
sng mu.
GaAs (P)
GaAs (N)
A
K
Mt mi nhn
950nm
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Trang 425
Nguyn l lmvic:
Khi phn cc thun cho it, cc ht dn a s s khuch tn qua
tip xc P-N, chng ti hp vi nhau v pht ra bc x hng
ngoi. Cc tia hng ngoi bc x ra theo nhiu hng khc nhau.
Nhng tia hng ngoi c hng i vo trong cc lp cht bn
dn, gp gng phn chiu (mt mi nhn) s c phn x tr
li i ra ngoi theo cng hng vi cc tia khc. iu ny lm
tng hiu sut ca LED.
Trong k thut thng tin v t ng ha nh sng hng ngoi
gn c s dng rt rng ri. Lng thng tin c truyn i
vi sng hng ngoi ln gp nhiu ln so vi sng in t m
ngi ta thng dng.
8.2.4. LED hng ngoi
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Trang 426
Mt s hnh nh ca LED
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Trang 427
8.2.5. Mt ch th tinh th lng (LCD: Liquid Crystal Display)
Tinh th lng s dng trong LCD l nhng hp cht hu c c
bit. Cc phn t ca tinh th lng ny c phn b sao cho
cc trc dc ca chng nmsong song vi nhau.
nhit thp LCD trng thi rn, khi t
0
tng ln n nhit
nng chy th LCD chuyn sang trng thi lng. Pha trung
gian gia hai trng thi ny l trng thi tinh th lng
Mt ch th tinh th lng- LCD- khng phi l linh kin bn dn
quang in
t. LCD c ch to di dng thanh v chm- ma trn. LCD
l cu kin th ng, n khng pht sng nn cng d c nu
xung quanh cng sng
LCD: dng lm mt ch th cho ng h, my tnh con, cc thit
b o s, chi tr em, mn hnh ti vi.
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Trang 428
Cu to ca thanh LCD:
o Gm c 2 tm knh t cch nhau khong 10m. Mt pha trong ca 2
tm knh trng mt lp oxit km (ZnO) trong sut lm hai in cc.
o Xung quanh bn cnh hai tm knh c hn kn, sau tinh th
lng vo khong gia 2 tm knh v gn kn li.
o Hai tm nha c tnh phn cc nh sng c dn bn ngoi hai tm
knh sao cho hnh nh phn chiu ca mt ch th c nhn t mt
pha nh gng phn chiu.

Gng phn chiu
Tm nha phn cc th 2
Tm nha phn cc th 1
in cc trong sut
Tinh th lng
Mt ngi quan st
nh sng
chiu vo
Keo
Knh
Knh
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Trang 429
Nguyn l lm vic:
Khi cha c in p t vo, cc thanh LCD khng lm vic, c
ngha l khng c in p t ln mt im nh con th phn tinh
th lng ti khng b tc ng g c, nh sng sau khi truyn
qua ch y vn gi nguyn phng phn cc, v cui cng b
chn li hon ton bi knh lc phn cc th hai. im nh con
ny b tt v i vi mt ngi quan st th y l mt im ti.
Mt ch th trong sut.
Khi c in p cung cp cho thanh LCD n lm thay i s nh
hng ca cc phn t tinh th lng ti v kt qu l nh sng
sau khi truyn qua phn tinh th lng ch im nh con ny s
b xoay phng phn cc i, c th lt qua lp knh lc phn cc
th hai, to ra mt im mu trn tm knh trc.
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Trang 430
8.2.6. Laser bn dn
Laser = Light Amplification by
Stimulated Emission of Radiation
c im:
- Ph pht sng hp
- Kch thc nh
- n nh cao
- C bc sng nh sng trong cc ca s
quang 1, 2, 3
- iu ch trc tip c th ln n vi
Gb/s
- Bn knh bc x nh (ghp vi si
quang)
R
e
l
a
t
i
v
e

o
p
t
i
c
a
l

p
o
w
e
r
Wavelength (nm)
< 3 nm
~ 75 nm
LED
Diode
Laser
Hnh 9-10
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Trang 431
8.2.6. Laser bn dn
nh ngha v LASER:
Nh bit, LED c mt lp chuyn tip PN c ch to trn
bn dn c vng cm thng vi cu trc PN n hay d th.
Nu t in p thun vo it ln th s in t v l trng
trong min chuyn tip c th t nhiu n mc to ra s o
ln mt . Khi c photon ti vi bc x kch thch mnh hn
bc x hp th th linh kin s pht ra nh sng kt hp. Lc
ny it c lp chuyn tip PN hot ng nh mt khuch i
laser.
Khuch i laser c thm lin kt phn hi quang c gi l
it laser.
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Trang 432
8.2.6. Laser bn dn
Cu trc ca it LASER
Bung cng hng cha hot cht laser, l mt cht c bit c kh nng
khuch i nh sng bng pht x cng bc to ra laser. Khi 1 photon
ti va chm vo hot cht ny th ko theo l 1 photon khc bt ra bay
theo cng hng vi photon ti. Mt khc, bung cng hng c 2 mt chn
hai u, mt mt phn x ton phn cc photon khi bay ti, mt kia cho
mt phn photon qua mt phn phn x li lm cho cc ht photon va chm
lin tc vo hot cht laser nhiu ln to mt photon ln. V th cng
chm laser c khuch i ln nhiu ln. Tnh cht ca laser ph thuc vo
hot cht , do ngi ta cn c vo hot cht phn loi laser.
1) Bung cng hng (vng b kch
thch)
2) Ngun nui (nng lng bm vo
vng b kch thch)
3) gng phn x ton phn
4) gng bn m
5) tia laser
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Trang 433
8.2.6. Laser bn dn
Hot ng ca it LASER
Cp ngun cho LD hot ng phn cc thun. Di s tc ng ca
hiu in th cao, cc electron di chuyn t mc nng lng thp ln
mc nng lng cao to nn trng thi o ln mt ca electron.
mc nng lng cao, mt s electron s ri ngu nhin xung mc
nng lng thp, gii phng ht nh sng c gi l photon.
Cc ht photon ny s to ra nhiu hng khc nhau t mt nguyn
t, va phi cc nguyn t khc, kch thch eletron cc nguyn t ny
ri xung tip, sinh thm cc photon cng tn s, cng pha v cng
hng bay, to nn mt phn ng dy chuyn khuch i dng nh
sng.
Cc ht photon b phn x qua li nhiu ln trong vt liu, nh cc
gng tng hiu sut khuch i nh sng.
Mt s photon ra ngoi nh c gng bn m ti mt u ca vt liu.
Tia sng i ra chnh l tia laser.
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Trang 434
8.2.6. Laser bn dn
Phnloi
+Laser cht rn
C khong 200 cht rn c kh nng dng lm mi trng hot cht laser. Mt s loi
laser cht rn thng dng:
YAG-Neodym: hot cht l Yttrium Aluminium Garnet (YAG) cng thm 2-5%Neodym,
c bc sng 1060nm thuc ph hng ngoi gn. C th pht lin tc ti 100Whoc pht
xung vi tn s 1000-10000Hz.
Hng ngc (Rubi): hot cht l tinh th Alluminium c gn nhng ion chrom, c bc
sng 694,3nmthuc vng ca nh sng trng.
Bn dn: loi thng dng nht l diot Gallium Arsen c bc sng 890nm thuc ph hng
ngoi gn.
+Laser cht kh
He-Ne: hot cht l kh Heli v Neon, c bc sng 632,8nm thuc ph nh sng trong
vng nhn thy, cng sut nh t mt n vi chc mW.
Argon: hot cht l kh argon, bc sng 488 v 514,5nm.
CO2: bc sng 10.600nm thuc ph hng ngoi xa, cng sut pht x c th ti
megawatt (MW). Trong y hc ng dng lmdao m.
+LASER cht lng
Mi trng hot cht l cht lng, thng dng nht l laser mu.
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Trang 435
8.3. CC CU KIN CHUYN I QUANG IN
Cc b thu quang in hot ng da trn nguyn l hiu ng
chuyn i quang in. s hp th photon bi vt liu bn
dn to ra cc cp in t-l trng -> to ra tn hiu quang in
di dng dng in hay in th c th o c.
Thit b quan trng nht l it quang bn dn (photodiode)
Yu cu:
- nhy cao
- Nhiu trong nh
- Bng thng rng
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Trang 436
8.3.1. Quang tr (LDR-Light Dependent Resistor)
Cu to- nguyn l:
L b thu tn hiu quang n gin nht. Quang tr thng c lm bng cht
Sunfit Cadimium (CdS), Selenid Cadimium (CdSe), Sunfit ch (PbS) trong
loi quang tr CdS c nhy ph gn vi mt ngi nn thng dng nht.
Quang tr c ch to bng cch to mt mn bn dn trn nn cch in ni ra 2
u kim loi ri t trong mt v nha, mt trn c lp thu tinh trong sut
nhn nh sng bn ngoi tc ng vo.
Khi nh sng chiu vo b mt quang tr, cc cp e-l trng c sinh ra v c
in trng cun ra pha cc in cc. Ph thuc vo thng lng nh sng chiu
vo, dng in bn ngoi cng thay i theo.
Bn dn
cch in
Bn in cc
Dy dn ni t
in cc ra
ngoi
h
Hnh 9-13
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Trang 437
Tr s in tr ca quang tr thay i theo sng chiu vo n. Khi
b che ti th quang tr c tr s in tr rt ln (vi MO), khi c chiu
sng th in tr gim nh (vi chc O vi trm O).
u im ca quang tr: c khuch i trong, ngha l dng quang in
thu c c s in t (hay l trng) ln hn s in t (hay l trng) do
photon to ra
ng dng: dng trong cc mch thu tn hiu quang, trong bo ng,
ng ngt cc mch in, trong o c, iu khin v t ng ho.
R
CdS
Lux
Hnh 9.15. c tnh ca quang tr
Hnh 9.14. K hiu ca quang tr
FR1 NORPS-11
8.3.1. Quang tr (LDR-Light Dependent Resistor)
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Trang 438
8.3.2. it quang
it thu quang c vai tr rt quan trng trong h thng thng tin
quang. ch phn cc ngc n dng thu tn hiu quang.
ch ny, it thu quang l linh kin tiu th nng lng. Khi
khng phn cc, it quang lm vic ch pin quang in, n
c th bin nng lng nh sng thnh nng lng in. ch
ny, it thu quang l linh kin pht ra nng lng.
Tu theo chc nng v cu trc c th chia it quang thnh nhiu
loi nh sau:
it quang loi chuyn tip P-N.
it quang loi PIN.
it quang thc (APD).
Mt s c im ca it quang l rt tuyn tnh, t nhiu, di tn
s lmvic rng, nh, c bn c hc cao v tui th cao.
it quang khng nhy bng in tr quang loi CdS nhng n
lmvic nhanh gp nhiu ln.
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Trang 439
N
+
P
+
N
SiO2
Lp tip xc
kim loi
Lp kim loi
trong sut
Min in tch
khng gian
Lp tip xc
kim loi
8.3.2.1. it quang dng chuyn tip PN
it quang c cu to ging nh cu trc it P-N thng
thng, nhng khc l: lp bn dn to ra bi khuch tn gn b
mt c chiu dy c 1m i vi Si v c nng pha tp khng
qu cao nh sng c th xuyn su vo trong lng cht bn
dn (xuyn qua chuyn tip PN). Ngoi ra, it quang cn c mt
ca s chiu nh sng vo. Hai chn ant A v catt K l kim
loi c ni ti cc phn bn dn. (Xem hnh 8-18). it quang
lun hot ng ch phn cc ngc .
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Trang 440
8.3.2.1. it quang dng chuyn tip PN
D C

I
D
R
t
U
R

E
CC
Nguyn l lm vic:
Khi c chiu sng cc photon ti c hp th trong ba min khc nhau
ca it quang s hnh thnh cc cp in t v l trng bng kch thch
quang hc trong vng ny s to thnh dng quang in trong it quang.
Di tc dng ca in trng ti vng ny, cc in t v l trng sinh ra
trong min in tch khng gian b qut ngay lp tc v pha min P
+
v min
N. Cc cp in t v l trng sinh ra trong vng trung ha (vng P
+
v vng
N) s t khuch tn v mt s ht s b ti hp trong vng ny. i vi mt s
ht dn c th khuch tn n bin gii ca min in tch khng gian th
chng cng b in trng ca min ny qut i. Cc ht quang ti in
khuch tn ny to thnh dng quang in khuch tn J
ndiff
v J
pdiff
.
Nh trong s hnh 8-20, it quang c cp ngun
E
CC
sao cho chuyn tip P-N phn cc ngc to ra
mt in trng dch chuyn cc ht dn thiu s s c
sinh ra di tc dng ca nh sng. Do , khi cha c tc
dng nh sng th trong it thu quang ch c dng in
ngc (dng in ti hay dng r) rt nh.
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Trang 441
8.3.2.2. PIN Diode (Photodiode c lp bn dn thun)
it PIN bao gm lp P, lp I v lp N. Lp I l lp bn dn thun c in
tr rt cao khi it PIN c phn cc ngc, lp ngho c th lan ra rt
rng trong lp I hng phn ln cc photon ri v hp th trong .
Trong lp I c in trng cun rt cao cun ht ti nhanh chng v 2 cc
to nn dng quang in mch ngoi.
Nguyn l hot ng:
Nguyn l hot ng ca it quang PIN tng t nh nguyn l hot ng ca
it quang PN
N
+
P
+
I
SiO
2
Lp tip xc
kim loi
Lp kim loi
trong sut
Min in tch
khng gian
Lp tip xc
kim loi
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Trang 442
8.3.2.3. APD
Cu to ca APD c bn ging nh it quang loi P-I-N.
Lp bn dn nguyn tnh I trong it P-I-N c thay bng
mt lp bn dn P c nng tp cht thp nm gia hai lp
bn dn c nng tp cht cao P
+
v N
+
. Nh vy, min bn
dn P to thnh min tri v l ni sinh ra cc cp in t- l
trng.
Lp chng phn x

in cc (A)
E
CC
R
t
U
Ra
in cc (K)
P
+
P
N
N
+
SiO
2
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Trang 443
8.3.2.3. APD
BC
EFn
EFp
BV
0 L
N I P
D
B
C
E
A
F
G
H
I
hv
x
C ch nhn in trong b chuyn tip PN
Trong qu trnh di chuyn in t ny b va chm ngu nhin vi mng tinh th, v d im C.
im ny, in t chia bt mt phn nng lng cho mng tinh th, nng lng chuyn giao ny
ln hn rng vng cm v sc ion ha nguyn t, to nn chuyn dch in t FE. Mt
cp in t v l trng th cp c sinh ra, v n lt chng b gia tc bi in trng, ng
thi vi in t s cp.
in t s cp ny sau khi chuyn giao bt nng lng ti im C, ri xung im D v tip tc
c gia tc trn l trnh mi. L trng sinh ra im F c gia tc theo chiu ngc li v li va
chm vi mng tinh th im G to nn chuyn dch in t HI v li sinh ra cp in t v l
trng mi. Ln na, cp ht ti in ny li c gia tc di in trng v tham gia vo qu
trnh ion ha cc nguyn t bng va chm.
Mt photon hp th ti im Ato ra mt cp in t- l
trng bng chuyn dch in t AB (in t B trong
vng dn, l trng A trong vng ha tr). Hai ht quang
ti ny c t trong mt in trng rt mnh nn
chng lp tc c gia tc. Vi s gia tc ny im B thu
c mt ng nng ln, do , nng lng ton phn
ca in t ny ln hn nng lng y ca di dn.
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Trang 444
8.3.3. T bo quang in
Pin nng lng mt tri (hay pin quang in, t bo quang in),
l thit b bn dn cha lng ln cc it PN, chuyn i nh
sng mt tri thnh dng in. S chuyn i ny gi l hiu ng
quang in.
Hnh 8-25. Cu to ca mt t bo quang in
Cu to:
T bo quang in thng c ch to t cc vt liu: Ge, Si, CdS, ZnS,... Cu to
ca t bo quang in gm phn nhy quang l tm bn dn loi N vi cc ca s
trong sut cho tn hiu quang chiu vo. Pha i din vi lp bn dn N l lp bn
dn loi P. Tt c c bc trong v bo v vi 2 in cc dn ra ngoi.
R
t
I
R
U
L
Si (N)
Si (P)
Min in tch
khng gian
in cc (A)
in cc (K)
nh sng
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Trang 445
8.3.3. T bo quang in
Khi chiu sng ln lp bn dn N, do qu trnh lng t ha s
sinh ra tng i in t - l trng. Di tc dng ca in trng
trong min chuyn tip PN, cc l trng s di chuyn t phn bn
dn N sang bn dn P, cn cc in t th chuyn ng v b mt
ca lp bn dn N v lm xut hin hai u cc hiu in th
c hng in trng t bn dn P sang bn dn N (E
F
) v ngc
chiu vi chiu ca in trng tip xc. Do , in trng tip
xc gim, hng ro th nng ca tip xc P-N gim, cc ht dn
a s s khuch tn qua tip xc P-N. Hin tng ny tip tc
n mt tr s E
F
no m tr s dng in do cc l trng
chuyn ng tri v chuyn ng khuch tn bng nhau, th
trng thi cn bng ng trong tip xc P-N c xc lp hiu
in th U
F
hai u cc in n nh. Nh vy, t bo quang
in chuyn nng lng nh sng sang nng lng in.
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Trang 446
5.3.4. Transistor quang
N
P
N
+
SiO
2
C (cc gp)
E (cc pht)
B (cc gc- h)
nh sng
Min in tch khng gian
SiO
2
V mt cu to, transistor quang cng
ging nh transistor thng nhng cc
base h (hnh 8-26). Transistor quang
c mt thu knh trong sut tp
trung nh sng vo ni P-N gia
collector v base.
Khi cc base h, chuyn tip gc
pht c phn cc thun (T
E
) v
chuyn tip gp gc (T
C
) phn cc
ngc nn transistor lm vic vng
tch cc.
Transistor quang c 2 loi l P-N-P v N-P-N. Cc pht E l bn dn loi
N
+
c nng tp cht cao, cc gc B l bn dn loi P, v cc gp C l
bn dn loi N c nng tp cht thp. Cc gc l b mt c nh
sng chiu vo, n c ch to rt mng c in tr nh.
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Trang 447
Khi Transistor quang ch hot ng
th tip gip BC c phn cc ngc cn
tip gip BE phn cc thun
Khi nh sng chiu vo Transistor quang,
cc ht ti c sinh ra v c khuch
tn ti tip gip BC, tip gip ny s tch
in t v l trng gp phn to nn
dng quang in.
Tip gip BC c vai tr nh mt it
quang, cc ht ti t pha tip gip thun
BE c tim chch vo cc gc B. Dng
quang in trong min B (dng r I
CB
) s
tr thnh dng I
B
v c khuch i ln
(|+1) ln collector.
N
P
N
nh sng
Rt
E
CC
-
-
+
C
E
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Trang 448
ng dng:
Mch in a) dng transistor quang lp Darlington vi transistor cng
sut iu khin rle RY. Khi c chiu sng transistor quang dn
lm transistor cng sut dn cp in cho rle.
D

1
N
1
1
8
3

1
m
RY
+V
CC
!NPN
! NPN
D
!NPN
! NPN

1
k
R

1
N
1
1
8
3

1
m
RY
+V
CC
!NPN

1
k
R

1
N
1
1
8
3

1
m
RY
+V
CC
!PNP
(a) (b) (c)
Hnh 9.21
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Trang 449
5.3.5. Cc b ghp quang (Opto- Couplers)
Mc ch: dng cch ly gia cc mch c s khc bit ln v in
p.
VD: mch t ng iu khin cng sut c in p cao (U =
200V380V, 660V hay 1000V); mch iu khin thng c in p
thp nh cc mch logic, my tnh hay cc h thng phi tip xc vi
con ngi.
Cu to:
B ghp quang gm 2 thnh phn gi l s cp v th cp. Phn s
cp l mt it loi GaAs pht ra tia hng ngoi, phn th cp l mt
Transistor quang loi Silic. Khi c phn cc thun, it pht ra bc
x hng ngoi chiu ln trn mch ca Transistor quang.
Nguyn l: Phn s cp l LED hng ngoi bin i tn hiu in
thnh tn hiu nh sng. Tn hiu nh sng ny s c phn th cp
(Transistor quang) bin i li thnh tn hiu in
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Trang 450
c im:
in p cch in gia s cp v th cp (vi trm vn hng ngn
vn)
B ghp quang c th lm vic vi I
DC
hoc I
AC
c tn s cao
in tr cch in gia s cp v th cp c tr s rt ln (vi chc
MOvi trm MO) i vi I
DC
H s truyn t dng in (I
C
/I
F
): vi chc % vi trm % tu
loi b ghp quang
!NPN

1
N
1
1
8
3
I
F
I
C
Hnh 9.22 Nguyn l Hnh 9.23. B ghp quang transistor
!NPN

1
N
1
1
8
3
1
4
2 3
!NPN

1
N
1
1
8
3
1
5
2
4
6
3
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Trang 451
Cc loi b ghp quang:
a) B ghp quang Transistor:
Phn th cp: Transistor loi Si. i vi b ghp quang transistor c 4 chn
th transistor khng c cc B, trng hp b ghp quang transistor c 6 chn
th cc B c ni ra ngoi (hv). B ghp quang khng c cc B c u
im l h s truyn t ln, nhng c nhc im l n nh nhit km.
Nu ni gia cc B v E mt in tr th cc b ghp quang transistor ny
lm vic kh n nh vi nhit nhng h s truyn t b gim i.
NDAR1
1k
1
5
2
4
6
3

1
N
1
1
8
3
Hnh 9.24 Transistor quang Darlington
b) Transistor quang Darlington:
c nguyn l nh b ghp quang vi
quang transistor nhng vi h s truyn
t ln hn vi trm ln nh tnh cht
khuch i ca mch Darlington. Nhc
im: nh hng bi nhit rt ln nn
gia chn B v E ca transistor sau
thng c in tr n nh nhit.
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Trang 452
! NPN
! PNP
F
D
1

B
P
1
0
4
S
A
K
G

2
N
1
5
9
5

1
N
1
1
8
3
1
5 2
4
6
3
c) B ghp quang vi quang Thyristor:
- Gm mt it quang v 2 transistor lp theo nguyn l ca SCR.
- Khi c nh sang hng ngoi do LED s cp chiu vo it quang
th s c dng in I
B
cp cho transistor NPN v khi transistor NPN
dn th s iu khin transistor PNP dn in. Nh vy thyristor
quang c dn in v s duy tr trng thi dn m khng cn
kch lin tc s cp.
- tng kh nng chng nhiu ngi ta ni gia chn G v K bng
mt in tr t vi Kvi chc K
Hnh 9.25 K hiu v cu trc bn dn tng ng ca Thyristor quang
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Trang 453
ng dng:
- Cc loi b ghp quang c dng in s cp cho LED hng
ngoi khong 10 mA.
- i vi transistor quang khi thay i tr s dng in qua LED
hng ngoi s cp s lm thay i dng in ra I
C
ca
transistor quang th cp.
- Cc b ghp quang c th dng thay cho rle hay bin p xung
giao tip vi ti thng c in p cao v dng in ln.
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Trang 454
* Mch in hnh 9.27 l ng dng ca transistor quang iu khin
ng ngt rle.
Transistor quang trong b ghp quang c ghp Darlington vi
transistor cng sut bn ngoi. Khi LED hng ngoi s cp c cp
c cp ngun 5V th transistor quang dn iu khin transistor cng
sut dn cp in cho rle RY. in tr 390 gii hn dng qua
LED hng ngoi khong 10mA.
Hnh .
1k
NDAR1
D

1
N
1
1
8
3
390
+5V

1
N
1
1
8
3

1
m
RY
+24V
Hnh 9.27 .
www.ptit.edu.vn
Trang 455
* Mch in hnh 9.28 l ng dng ca OPTO- Triac ng ngt in
cho ti dng ngun xoay chiu 220V.
in tr 1k gii hn dng qua LED hng ngoi khong 10mA. Khi
LED s cp c cp ngun 12V th triac quang s c kch v dn in
to dng kch cho triac cng sut. Khi triac cng sut c kch s dn
in nh mt cng tc ng in cho ti.
+12V

2
N
5
4
4
4
U
1

D
3
0

1
N
1
1
8
3
~220V
Ti
1k
Hnh 9.28

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HC VIN CNG NGH BU CHNH VIN THNG

Hng s Boltzmann k =1,38.10

- Tu theo ng dng c th m bin p c nhng yu cu khc nhau v

phn cc ngc cho chuyn tip PN gia cc G v

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