KSE13003 NPN Silicon Transistor

March 2008

KSE13003 NPN Silicon Transistor

High Voltage Switch Mode Applications
High Voltage Capability High Speed Switching Suitable for Switching Regulator and Motor Control

TO-126 2.Collector 3.Base

1. Emitter

Absolute Maximum Ratings*

Symbol
V CBO V CEO V EBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current

T C = 25C unless otherwise noted (notes_1)

Parameter

Value
700 400 9 1.5 3 0.75 20 150 -65 ~ 150

Units
V V V A A A W C C

Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Range

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

hFE Classification
Classification
hFE*
* Test on VCE = 2V, IC = 0.5A.

H1
9 ~ 16

H2
14~ 21

H3
19 ~ 26

2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1

www.fairchildsemi.com

KSE13003 NPN Silicon Transistor

Electrical Characteristics
Symbol
BVCEO IEBO hFE VCE(sat)

TC = 25C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Voltage

Conditions
IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC =1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.1A VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125W

Min.
400

Typ.

Max
10

Units
V mA

8 5

40 0.5 1 3 1 1.2 21 V V V V V pF MHz 1.1 4.0 0.7 ms ms ms

VBE(sat) Cob fT tON tSTG tF

*Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time

* Pulse Test: Pulse Width=5ms, Duty Cycle10%

Package Marking and Ordering Information

Device Item (notes_2)
KSE13003H1ASTU KSE13003H2ASTU KSE13003H3ASTU
Notes_2 : 1) The Affix -H1/-H2/-H3 means the hFE classification. 2) The Sufix -STU means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com

Device Marking
1 E13003 2 E13003 3 E13003

Package
TO-126 TO-126 TO-126

Packing Method
TUBE TUBE TUBE

Remarks

2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 2

www.fairchildsemi.com

KSE13003 NPN Silicon Transistor

Typical Performance Characteristics

2.0

100

IC[A], COLLECTOR CURRENT

1.6

hFE, DC CURRENT GAIN

IB = 500mA IB = 450mA IB = 400mA

VCE = 2V

1.2

IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA

10

0.8

0.4

IB = 0mA
0.0 0 1 2 3 4 5

0.1 0.01

0.1

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10

10

IC = 4 IB

tSTG, tF[ms], TIME

VBE(sat)

tSTG
1

tF
0.1

0.1

VCE(sat)

0.01 0.01

0.1

10

0.01 0.1

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Switching Time

10

30

ICMAX. (pulse)

ms 10

25

s 1m

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

IC MAX. (DC)
1

s 5m

s 0m 10

20

15

0.1

10

0.01

10

100

1000

25

50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 3

Figure 6. Power Derating

www.fairchildsemi.com

KSE13003 NPN Silicon Transistor

2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 4

www.fairchildsemi.com