Professional Documents
Culture Documents
Department of Telecommunications Faculty of Electrical and Electronics Engineering Ho Chi Minh city University of Technology
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 1
Introduction
Introduction
Introduction
Introduction
Introduction
Introduction
Introduction
13
V .l V .l I (l ) e e Z0 Z0
1 ( x ) Z ( x) Z0 1 ( x )
( l )
Z L Z0 Z L Z0
2 d
( x) (l ).e
1 1
VSWR
14
15
Using lump elements Using transmission line ADS Smith chart tool
16
S-Parametter Definition
S-Parametter Definition
24
Technology
CMOS
The metaloxidesemiconductor field-effect transistor (MOSFET) was first patented by Julius Edgar Lilienfeld in 1925, well before the invention of BJT. Due to the fabrication limitation, MOSFET has not been used until the early years of 1960s. CMOS (Complementary MOS p- and n-type device) was patented by Frank Wanlass in 1967, initiating a revolution in the semiconductor industry. CMOS initially dominates in the digital circuit/systems while others for analog. Why CMOS now ? Low cost, high integration and solution for SOC.
Dr. Cuong HuynhTelecommunications DepartmentHCMUT 25
CMOS Technology
CMOS Technology
27
Microwave Devices
DIODES BIPOLAR JUNCTION TRANSISTORS FIELD EFFECT TRANSISTORS Capacitor Inductor
28
29
30
31
32
33
34
35
36
37