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  • NTE92 (NPN) & NTE93 (PNP) Silicon Complementary Transistors Hi Fi Power Amp, Audio Output

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    Carlos Alberto Nieves
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    This document provides specifications for the NTE92 and NTE93 silicon complementary transistors intended for use in high-fidelity power amplifiers and audio outputs. It lists maximum ratings for voltages, currents, power dissipation and temperatures. It also provides typical electrical characteristics including cutoff currents, breakdown voltage, current gain, saturation voltage and transition frequency. Finally, it notes that matched complementary pairs are available and includes dimensions for the transistors.

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    This document provides specifications for the NTE92 and NTE93 silicon complementary transistors intended for use in high-fidelity power amplifiers and audio outputs. It lists maximum ratings for voltages, currents, power dissipation and temperatures. It also provides typical electrical characteristics including cutoff currents, breakdown voltage, current gain, saturation voltage and transition frequency. Finally, it notes that matched complementary pairs are available and includes dimensions for the transistors.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    15 views2 pages

    NTE92 (NPN) & NTE93 (PNP) Silicon Complementary Transistors Hi Fi Power Amp, Audio Output

    Uploaded by

    Carlos Alberto Nieves
    This document provides specifications for the NTE92 and NTE93 silicon complementary transistors intended for use in high-fidelity power amplifiers and audio outputs. It lists maximum ratings for voltages, currents, power dissipation and temperatures. It also provides typical electrical characteristics including cutoff currents, breakdown voltage, current gain, saturation voltage and transition frequency. Finally, it notes that matched complementary pairs are available and includes dimensions for the transistors.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 2

    NTE92 (NPN) & NTE93 (PNP)

    Silicon Complementary Transistors


    HiFi Power Amp, Audio Output
    Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
    CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
    CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
    EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
    Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
    Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
    Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
    Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
    Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C
    Note 1. Matched complementary pairs are available upon request (NTE93MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.
    Electrical Characteristics: (TA = +25C unless otherwise specified)
    Parameter

    Symbol

    Test Conditions

    Min

    Typ

    Max

    Unit

    Collector Cutoff Current

    ICBO

    VCB = 200V

    0.1

    mA

    Emitter Cutoff Current

    IEBO

    VBE = 6V

    0.1

    mA

    200

    CollectorEmitter Breakdown Voltage


    DC Current Gain
    CollectorEmitter Saturation Voltage
    Transistion Frequency

    V(BR)CEO IC = 50mA
    hFE

    VCE = 4V, IC = 5A

    30

    120

    VCE(sat)

    IC = 10A, IB = 1A

    VCE = 12V, IE = 0.5A

    20

    MHz

    fT

    1.430 (36.32)
    .961 (24.42)

    .843
    (21.42)
    B

    .788
    (20.02)
    Min

    .215 (5.48)

    .118 (3.0)

    .244 (6.2) Max


    Collector connected to Tab

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