Semiconductor Components Industries, LLC, 2013

September, 2013 Rev. 10

1 Publication Order Number:
TIP41A/D
TIP41G, TIP41AG, TIP41BG,
TIP41CG (NPN),
TIP42G,TIP42AG, TIP42BG,
TIP42CG(PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
Epoxy Meets UL 94 V0 @ 0.125 in
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
V
CEO
40
60
80
100
Vdc
CollectorBase Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
V
CB
40
60
80
100
Vdc
EmitterBase Voltage V
EB
5.0 Vdc
Collector Current Continuous I
C
6.0 Adc
Collector Current Peak I
CM
10 Adc
Base Current I
B
2.0 Adc
Total Power Dissipation
@ T
C
= 25C
Derate above 25C
P
D
65
0.52
W
W/C
Total Power Dissipation
@ T
A
= 25C
Derate above 25C
P
D
2.0
0.016
W
W/C
Unclamped Inductive Load Energy
(Note 1)
E 62.5 mJ
Operating and Storage Junction,
Temperature Range
T
J
, T
stg
65 to +150 C
ESD Human Body Model HBM 3B V
ESD Machine Model MM C V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I
C
= 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V
CC
= 10 V, R
BE
= 100 W.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220
CASE 221A
STYLE 1
MARKING DIAGRAM
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
406080100 VOLTS,
65 WATTS
http://onsemi.com
1
2
3
4
TIP4xx = Device Code
xx = 1, 1A, 1B, 1C
2, 2A, 2B, 2C
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
TIP4xxG
AYWW
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
NPN PNP
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoCase R
qJC
1.67 C/W
Thermal Resistance, JunctiontoAmbient R
qJA
57 C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
V
CEO(sus)
40
60
80
100

Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
TIP41G, TIP41AG, TIP42G, TIP42AG
(V
CE
= 60 Vdc, I
B
= 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG
I
CEO

0.7
0.7
mAdc
Collector Cutoff Current
(V
CE
= 40 Vdc, V
EB
= 0)
TIP41G, TIP42G
(V
CE
= 60 Vdc, V
EB
= 0)
TIP41AG, TIP42AG
(V
CE
= 80 Vdc, V
EB
= 0)
TIP41BG, TIP42BG
(V
CE
= 100 Vdc, V
EB
= 0)
TIP41CG, TIP42CG
I
CES

400
400
400
400
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
1.0 mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
h
FE
30
15

75

CollectorEmitter Saturation Voltage

(I
C
= 6.0 Adc, I
B
= 600 mAdc)
V
CE(sat)
1.5
Vdc
BaseEmitter On Voltage
(I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
3.0
MHz
SmallSignal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
20

2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
http://onsemi.com
3
Figure 1. Power Derating
T, TEMPERATURE (C)
0 100
0
20
160
40
60
60 80 40 140
80
Figure 2. Switching Time Test Circuit
0.06
Figure 3. TurnOn Time
I
C
, COLLECTOR CURRENT (AMP)
0.02
0.4 6.0
0.07
1.0
4.0
T
J
= 25C
V
CC
= 30 V
I
C
/I
B
= 10
t
,

T
I
M
E

(

s
)

0.5
0.3
0.1
0.05
0.1 0.6 1.0
t
d
@ V
BE(off)
5.0 V
0.03
0.7
2.0
0.2 2.0
t
r
20 120
P
D
,

P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

(
W
A
T
T
S
)
T
C
T
C
0
1.0
2.0
3.0
4.0
T
A
T
A
+11 V
25 ms
0
-9.0 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
100 mA
MSD6100 USED BELOW I
B
100 mA
0.2
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
http://onsemi.com
4
t, TIME (ms)
1.0
0.01
0.01
0.1
r
(
t
)
,

T
R
A
N
S
I
E
N
T

T
H
E
R
M
A
L

R
E
S
I
S
T
A
N
C
E

(
N
O
R
M
A
L
I
Z
E
D
)
1.0 1.0 100
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.92C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
P
(pk)
t
1
t
2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t
1
/t
2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 500 10 20 50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 20 5.0 60 100
Figure 5. ActiveRegion Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ T
C
= 25C
(SINGLE PULSE)
1.0ms
2.0
1.0
10
5.0
I
C
,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(
A
M
P
)
0.5ms
CURVES APPLY BELOW RATED V
CEO
3.0
0.3
40 80
5.0ms
T
J
= 150C
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
150C. T
J(pk)
may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 0.4 0.6 4.0 0.06 1.0 2.0 0.2
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
5.0
t
,

T
I
M
E

(

s
)

2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0 1.0 3.0 5.0 20 0.5 10 2.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C
,

C
A
P
A
C
I
T
A
N
C
E

(
p
F
)
200
100
70
50
30
30 50
T
J
= 25C
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
C
ib
C
ob
3.0
t
s
t
f
T
J
= 25C
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
http://onsemi.com
5
V
C
E
,

C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R

V
O
L
T
A
G
E

(
V
O
L
T
S
)
T
J
, JUNCTION TEMPERATURE (C)
10
3
-0.3
10
1
10
0
10
-2
10
2
10
-1
10
-3
10M
100k
10k
0.1k
1.0M
1.0k
I
B
, BASE CURRENT (mA) I
C
, COLLECTOR CURRENT (AMP)
h
F
E
,

D
C

C
U
R
R
E
N
T

G
A
I
N
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
I
C
, COLLECTOR CURRENT (AMP)
300
500
0.1 0.2 0.4 6.0 0.06
100
70
50
30
10
7.0
0.3
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. On Voltages
V
CE
= 2.0 V
5.0
1.0 2.0 0.6
1.6
2.0
20 30 100 1000 10
0.8
0.4
50
0
300 500 200
25C
T
J
= 150C
-55C
1.2
2.0
0.06
I
C
, COLLECTOR CURRENT (AMP)
1.6
0.8
1.2
0.4
0
0.1 0.2 0.3 0.4 0.6 1.0
+2.5
I
C
= 1.0 A
20 60 80 100 120 160 140 40
V
,

V
O
L
T
A
G
E

(
V
O
L
T
S
)
T
J
= 25C
2.5 A 5.0 A
2.0 3.0 4.0 6.0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 4.0 V
V
CE(sat)
@ I
C
/I
B
= 10
V
,

T
E
M
P
E
R
A
T
U
R
E

C
O
E
F
F
I
C
I
E
N
T
S

(
m
V
/
C
)

+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
*APPLIES FOR I
C
/I
B
h
FE
/4
*q
VC
FOR V
CE(sat)
q
VB
FOR V
BE
Figure 11. Temperature Coefficients
,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

(

A
)

I
C
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance
V
CE
= 30 V
T
J
= 150C
100C
25C
REVERSE FORWARD
I
C
= I
CES
R
B
E
,

E
X
T
E
R
N
A
L

B
A
S
E
-
E
M
I
T
T
E
R

R
E
S
I
S
T
A
N
C
E

(
O
H
M
S
)
V
CE
= 30 V
I
C
= 10 x I
CES
I
C
I
CES
I
C
= 2 x I
CES
(TYPICAL I
CES
VALUES
OBTAINED FROM FIGURE 12)
200
20
4.0
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
+25C to +150C
-55C to +25C
+25C to +150C
-55C to +25C
+0.7
T
J
= 25C
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
http://onsemi.com
6
ORDERING INFORMATION
Device Package Shipping
TIP41G TO220
(PbFree)
50 Units / Rail
TIP41AG TO220
(PbFree)
50 Units / Rail
TIP41BG TO220
(PbFree)
50 Units / Rail
TIP41CG TO220
(PbFree)
50 Units / Rail
TIP42G TO220
(PbFree)
50 Units / Rail
TIP42AG TO220
(PbFree)
50 Units / Rail
TIP42BG TO220
(PbFree)
50 Units / Rail
TIP42CG TO220
(PbFree)
50 Units / Rail
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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PUBLICATION ORDERING INFORMATION
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TIP41A/D
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