The two emitters of two BJTs are coupled together. Transistors are prevented from going into saturation (non-saturating logic) eliminating storage delays. Logic levels are close to each other so that transistor is turned on by a small increase in base voltage.
The two emitters of two BJTs are coupled together. Transistors are prevented from going into saturation (non-saturating logic) eliminating storage delays. Logic levels are close to each other so that transistor is turned on by a small increase in base voltage.
The two emitters of two BJTs are coupled together. Transistors are prevented from going into saturation (non-saturating logic) eliminating storage delays. Logic levels are close to each other so that transistor is turned on by a small increase in base voltage.
Here, the two emitters of two BJTs are coupled together. Transistors are prevented from going into saturation (non-saturating logic) eliminating storage delays. Logic levels are close to each other so that transistor is turned on by a small increase in base voltage. Fastest and steady current flow from power supply but power consumption is more and less noise immunity.
Description
The logic level corresponding to logic 1 and logic 0 are 0.9V and 1.7V respectively.
Input is applied to base of Q 1 and base of Q 2 is held at average of two logic levels i.e. -1.3V by a internally regulated source.
If base of Q 1 is at logic LOW(-1.7V):
The total voltage tending to forward bias BE junction of Q 1 is 1.7-(-5.2) = 3.5V whereas that for Q 2 is 1.3-(-5.2) = 3.9V.
Since Emitter of both Q 1 and Q 2 are at common potential it is 1.7 0.8 = -2.5V if Q 1 is on [Transistors are specially made to have BE drop 0.8V at forward bias] and 1.3 0.8 = -2.1V if Q 2 is on. They cannot be on simultaneously. The one that is most forward biased is on. In this case Q 2 is on and Q 1 is off.
If base of Q 1 is at logic HIGH(-0.9V):
By similar logic Q 1 is on and Q 2 is off with common emitter voltage at 0.9-0.8 = -1.7V
I E = (V IN V BE(on) + 5.2)/R 3 = (V IN + 4.4)/R 3 I C [Since only one transistor is on and I B small]
Current I E switches from Q 1 to Q 2 or the reverse with the change in input logic level.
At the collector of Q 1 voltage when input LOW = 0V (GND)
At the collector of Q 1 voltage when input HIGH = 0 I C R 1 = -(-0.9 + 4.4)R 1 /R 3
If R 1 = 290 and R 3 = 1.18K this voltage is 3.5x0.29/1.18 -0.9V
Therefore outputs are fairly independent of transistor parameters. Also though individual resistance values may vary a lot the ratio does not. 17
18 Two Input ECL OR/NOR Gate
Typical values: R 1 = 290, R 2 = 300, R 3 = 1.18K, R 4 = 1.5K, R 5 = 1.5K
When both A and B are LOW i.e. Q 1A and Q 1B off
R 1 is chosen such that base current of Q 3 makes I B3 R 1 -0.1V
Similarly value of R 2 is chosen such that under this condition I 2 flowing through puts the collector of Q 2 at -0.9V
Now emitter of Q 3 is at 0.1 - 0.8 = -0.9V and that for Q 4 is 0.9 - 0.8 = -1.7V 19 When at least one input is HIGH i.e. either Q 1A or Q 1B conducts
By similar logic the outputs of Q 3 and Q 4 are opposite. And we get following Truth Table.
The differential input circuitry in ECL gates provide common mode rejection. Power supply noise common to both sides of the differential configuration is effectively differenced out.
Modern ECL circuits have internal pull down resistors connected between each input and negative power supply to prevent build up of charge on stray capacitances when input is open.
20 Noise Margin
Current through Q 1 and Q 2 are same when V IN = -1.3V (Reference voltage) at the midpoint of transition. Current through a diode changes a factor of 10 for each change of 60mV across the junction. With voltage at base of Q 1 just 60mV less than base of Q 2 the current in Q 2 is 10 times more and vice versa. (This is the Current switch action.) The transition width is 120 mV is independent of transistor parameters and is centred around reference voltage.
Transition width = V IH V IL = 240 mV (then current 0.01 percent)
Therefore, V IH = -1.3 + 0.12 = -1.18V and V IL = -1.3 - 0.12 = -1.42V
Thus NM H = V OH V IH = -0.9 (-1.18) = 0.28V NM L = V IL V OL = -1.42 (-1.7) = 0.28V
Fanout
Since ECL output is produced at an emitter follower, the output impedance is desirably small, typically 7 ohm. For this ECL has huge fanouts and are relatively unaffected by capacitive loads.
With minimum V IH = -1.18V voltage at base of Q 4 = -1.18-(-0.8) = -0.38V
I B4 = (0 (-0.38))/0.29 = -1.31mA (Since, Q 1 is off)
Current available for load I output = ( F + 1)I B4 (V IH (-5.2))/R 4
= (30+1)x1.31 (-1.18+5.2)/1.5 = 37.93 mA
Assuming gate input current to be 100 microamp, the fanout is 37.93/0.1 379
Note that for any fast logic fanout limitation comes from capacitive load rather than current loading.
21 Wired-OR Connections
ECL gates are available with open emitter outputs i.e. with the resistors in the output emitter followers omitted. All logic gates in the 10K and 10KH series have open emitter outputs.
Open emitter outputs can be connected directly together and to an external resistor to perform wired-OR operation.
22 Integrated Injection Logic (I 2 L)
This is newest of the logic families using BJTs and do not require any space consuming resistors. It is easily fabricated and ecomomical with speed power product 4 pJ comparable to advanced low power Schottky TTL.
PNP transistor Q 1 serves as a constant current source that injects current in node X. There the direction of current flow depends on input level. A LOW sinks current diverting current from base of Q 2 . Therefore Q 2 is off and its output HIGH. The reverse happens if input is HIGH and then output is LOW.
In actual I 2 L circuit the output transistor has two collectors (sometimes three), making it equivalent to two transistors with parallel bases and emitters. Thus it produces two equal outputs.
Instead of a collector resistor, the outputs are connected directly to the inputs of other I 2 L gates.
I 2 L can also be interpreted in terms of current flow: Current flowing through a transistor is LOW and no current is HIGH. Equivalently, a on transistor capable of sinking current is LOW and an off transistor that prevents current from flowing into it is HIGH. Typically, V = 0.8V.