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1. 1. 1. 1. 1.

(c)
2. 2. 2. 2. 2. (b)
3. 3. 3. 3. 3. (d)
4. 4. 4. 4. 4. (a)
5. 5. 5. 5. 5. (c)
6. 6. 6. 6. 6. (b)
7. 7. 7. 7. 7. (d)
15. 15. 15. 15. 15. (a)
16. 16. 16. 16. 16. (b)
17. 17. 17. 17. 17. (b)
18. 18. 18. 18. 18. (a)
19. 19. 19. 19. 19. (c)
20. 20. 20. 20. 20. (b)
21. 21. 21. 21. 21. (b)
22. 22. 22. 22. 22. (a)
23. 23. 23. 23. 23. (d)
24. 24. 24. 24. 24. (a)
25. 25. 25. 25. 25. (b)
26. 26. 26. 26. 26. (c)
27. 27. 27. 27. 27. (a)
28. 28. 28. 28. 28. (b)
8. 8. 8. 8. 8. (c)
9. 9. 9. 9. 9. (b)
10. 10. 10. 10. 10. (c)
11. 11. 11. 11. 11. (c)
12. 12. 12. 12. 12. (b)
13. 13. 13. 13. 13. (c)
14. 14. 14. 14. 14. (a)
GATE-2012
(TEST SERIES-2)
EE: Electrical Engineering
(Power Electronics & Analog)
Sl Sl Sl Sl Sl. .. .. N NN NNo oo oo. : 181211 . : 181211 . : 181211 . : 181211 . : 181211
A N S WE R S A N S WE R S A N S WE R S A N S WE R S A N S WE R S
29. 29. 29. 29. 29. (d)
30. 30. 30. 30. 30. (a)
31. 31. 31. 31. 31. (a)
32. 32. 32. 32. 32. (b)
33. 33. 33. 33. 33. (d)
34. 34. 34. 34. 34. (c)
35. 35. 35. 35. 35. (a)
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Postal Study C ourse ( PSC )
I nterview G uidance C ourse ( I G C )
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[14] GATE - 2012 (TEST SERIES - 2) ELECTRICAL ENGINEERING
M
A
D
E

E
A
S
Y
C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi )
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I nterview G uidance C ourse ( I G C )
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EXPLANATIONS
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1. 1. 1. 1. 1. ( c) ( c) ( c) ( c) ( c)
Power M O SFET has lower switching but its
on-resistance and conduction losses are
more. A BJT has higher switching losses
but lower conducti on loss. So, at hi gh
frequency applications. Power M O SFET is
the obvious choice.
2. 2. 2. 2. 2. ( b) ( b) ( b) ( b) ( b)
Forward
Blocki ng mode
O V
BO
I = 0
g
Reverse
blocking mode
Forward conducti on mode
( on-state)
Here,
V
BO
= Forward breakover voltage
V
BR
= Reverse breakdown voltage
I
g
= G ate current
The figure shown above shows the static
I -V characteristics of a thyristor.
I n forward blocking mode there is a small
current, called forward leakage current, and
high voltage.
3. 3. 3. 3. 3. ( d) ( d) ( d) ( d) ( d)
di
dt
rati ng of a thyri stor i ndi cates the
maximum rate of rise of current from mode
to cathode without any harm to the device.
4. 4. 4. 4. 4. ( a) ( a) ( a) ( a) ( a)
Since current becomes zero at t = , the
SCR would conduct till t = . The voltage
will not be negative when current becomes
zero so diode does not conduct.
5. 5. 5. 5. 5. ( c) ( c) ( c) ( c) ( c)
A three-phase semi conductor has the
unique feature of working as a six-pulse
converter for < 60 and as a three-pulse
converter for 60
6. 6. 6. 6. 6. ( b) ( b) ( b) ( b) ( b)
I n PWM , scheme, pulse-width is varied but
chopping frequency or chopping period ( T)
is kept constant.
7. 7. 7. 7. 7. ( d) ( d) ( d) ( d) ( d)
For the attenuati on of low-frequency
harmonics, the size of filter components
i ncreases. Thi s makes the fi lter ci rcui t
costly, bulk y whi le hi gh frequency
harmonics can easily be attenuated by a
low size low-cost filter.
8. 8. 8. 8. 8. ( c) ( c) ( c) ( c) ( c)
I f pulse width is made equal to
2
,
n

n
th
harmonic can be eliminated.
To eliminate 3
rd
harmonic
pulse width =
2
120
3


9. 9. 9. 9. 9. ( b) ( b) ( b) ( b) ( b)
V
o
=
s
V
1
660 =
O N
220
T
1
T

O FF
T
T
=
1
3
T = 3T
O FF
= 3 100 = 300
T
ON
= T T
O N
= 300 100
= 200 s
ELECTRICAL ENGINEERING POWER ELECTRONICS & ANALOG [15]
M
A
D
E

E
A
S
Y
C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi )
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
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Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C lassroom Study C ourse ( C SC )
Postal Study C ourse ( PSC )
I nterview G uidance C ourse ( I G C )
I ndi a I ndi a I ndi a I ndi a I ndi as Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G AT E & PSUs T E & PSUs T E & PSUs T E & PSUs T E & PSUs
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.
10. 10. 10. 10. 10. ( c) ( c) ( c) ( c) ( c)
Functional blog diagram of a 555 timer is
shown below.
C omparator
1
C omparator
2
T hreshold
6
R
2
3
V
cc
8 5
+ V
cc
C ontrol
voltage
1
3
V
cc
R
R
Discharge
7
Flip-Flop
V
ref
4
R eset
Trigger
2
O utput
stage
3
O utput
1
G round
Q
2
Q
1
11. 11. 11. 11. 11. ( c) ( c) ( c) ( c) ( c)
In the given op-amp circuit, an input voltage
is amplified to get a larger output current
( as output is current) . So this circuit with
this type of negative feedback is called
voltage controlled current source.
12. 12. 12. 12. 12. ( b) ( b) ( b) ( b) ( b)
Center branch will be open all the time
I =
1
1A
1

13. 13. 13. 13. 13. ( c) ( c) ( c) ( c) ( c)


Since the emitter is boost rapped to within
0.7 V of the input the voltage across the
emitter resistor = 1.3 V
Emitter current,
I
E
=
1.3
13 mA
100

The LED current is approximately 13 mA
Note: Note: Note: Note: Note: We do not include LED voltage drop in these
calculations because the transistor is acting
like a current source rather than a switch.
14. 14. 14. 14. 14. ( a) ( a) ( a) ( a) ( a)
The worst case occurs for minimum source
voltage and maximum load current.
The critical series resistance
R
s( max)
=
3
15 6.8
410
20 10

The series resistor must be less than


410 for the Zener diode to operate in break
down regi on under the worst-case
condition.
O ption ( a) is correct.
15. 15. 15. 15. 15. ( a) ( a) ( a) ( a) ( a)
I
D
=
2
GS
DSS
GS( off)
V
I 1
V
_


,
2 =
2
DSS
1
I 1
4
_


,
2 =
2
DSS
3
I
4
_

,
I
DSS
=
32
9
= 3.56
The closest option is ( a) .
16. 16. 16. 16. 16. ( b) ( b) ( b) ( b) ( b)
Average output voltage = V
o
= E + I
o
R

m
2V
cos

= E + I
o
R

2 2 230
cos

= 120 + 10 0.4
= 53.21
17. 17. 17. 17. 17. ( b) ( b) ( b) ( b) ( b)
Diode carries current in one direction, blocks
in other.
BJT carri es or blocks current i n one
direction.
[16] GATE - 2012 (TEST SERIES - 2) ELECTRICAL ENGINEERING
M
A
D
E

E
A
S
Y
C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi )
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Noi da C entre Noi da C entre Noi da C entre Noi da C entre Noi da C entre
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C lassroom Study C ourse ( C SC )
Postal Study C ourse ( PSC )
I nterview G uidance C ourse ( I G C )
I ndi a I ndi a I ndi a I ndi a I ndi as Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G AT E & PSUs T E & PSUs T E & PSUs T E & PSUs T E & PSUs
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G TO carries current in one direction or
blocks in both directions.
FET carries current in both directions, but
blocks in one direction.
18. 18. 18. 18. 18. ( a) ( a) ( a) ( a) ( a)
As voltage across the device decreases to
zero, and current through it increases to I
the transition is a turn-O N transition
Energy loss =
1 2
1 1
V I t I Vt
2 2
+
=
1 2
VI
( t t )
2
+
19. 19. 19. 19. 19. ( c) ( c) ( c) ( c) ( c)
Heater resistor R =
2
230
1000

RM S voltage for = 45
V
or
=
1/2
m
V 1
( ) sin2
2 2
1
+
1
]
=
1/2
2 230 1
sin90
4 2 2
1 _
+
1
,

]
= 155.07 V
Power absorbed =
2
or
V
R
=
2
155.07
1000
230
_


,
= 454.57 Watts
20. 20. 20. 20. 20. ( b) ( b) ( b) ( b) ( b)
RM S value of voltage = 230 V
M axi mum value of i nput voltage
= 230 2 V
Peak value of the instantaneous output
voltage is 230 V, it means the firing angle
is more than 90.
v
m
sin = 230
230 2 sin = 230
= 135 ( 45 is rejected)
21. 21. 21. 21. 21. ( b) ( b) ( b) ( b) ( b)
Circuit-turn off time for the SCRs
t
c
= RC ln( 2)
Considering safety margin of 2
C =
c
2 t
R n(2)

l
=
6
2 40
10
10 n2

l
= 11.542 F
22. 22. 22. 22. 22. ( a) ( a) ( a) ( a) ( a)
Peak current through T
1
=
o s
C
I v
L
+
=
50
80 220
20
+
= 427.85 A
23. 23. 23. 23. 23. ( d) ( d) ( d) ( d) ( d)
T
1
T
4
T
6
T
3
T
6
T
5
T
2
T
5
180 180
0 60 120 180 240 300 360
Thyristor pair in each arm i.e. T
1
, T
4
; T
3
, T
6
and T
5
, T
2
are turned on with a time interval
of 180. Thyristor in the upper group i.e. T
1
,
T
3
, T
5
conduct at an interval of 120. I t
implies that if T
1
is fired at t = 0, then T
3
must be fi red at t = 120 and T
5
at
t = 240, same is true for lower group of
SCRs.
24. 24. 24. 24. 24. ( a) ( a) ( a) ( a) ( a)
For input v
i
< 4 V, diode will be in O N state
5
v
i
v
o
i
+

1 V
5 V
ELECTRICAL ENGINEERING POWER ELECTRONICS & ANALOG [17]
M
A
D
E

E
A
S
Y
C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi )
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Noi da C entre Noi da C entre Noi da C entre Noi da C entre Noi da C entre
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C lassroom Study C ourse ( C SC )
Postal Study C ourse ( PSC )
I nterview G uidance C ourse ( I G C )
I ndi a I ndi a I ndi a I ndi a I ndi as Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G AT E & PSUs T E & PSUs T E & PSUs T E & PSUs T E & PSUs
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By applying K VL
v
i
+ 5
i
+ 1 5 = 0
i =
i
4 v
5

and v
o
= 5 1 = 4 V
For input voltage v
i
> 4 V, diode will be in
O FF state.
5
v
i
v
o
+

5 V
i = 0 A
v
o
= v
i
output voltage waveform will be
t
T /2
0
T
4 V
20 V
20 V
v
i
t 0
4 V
20 V
v
o
25. 25. 25. 25. 25. ( b) ( b) ( b) ( b) ( b)
The maximum voltage swing during each
half cycle is 15 V.
V
PP
( peak to peak) value or ac output
compliance.
V
PP
= 2 15 = 30 V
This is the maximum unclipped peak to
peak voltage that the ampli fi er can
produce.
M aximum load power
P
L( max)
=
2 2
PP
L
( V ) (30)
8R 8 100

=
9
1.125 W
8

26. 26. 26. 26. 26. ( c) ( c) ( c) ( c) ( c)
The time period of output rectangular wave.
T =
1 B
2RC n
1 B
+ _

,
l
Where B = Feedback fraction
=
2
1 2
R
R R +
R = Feedback resistance
C = Capacitance
B =
18 18
0.9
2 18 20

+
RC = ( 1 10
3
) ( 0.1 10
6
)
= 100 sec.
T =
6
1 0.9
2 (100 10 ) n
1 0.9

+ _


,
l
= 589 sec.
27. 27. 27. 27. 27. ( a) ( a) ( a) ( a) ( a)
1 k
20 k
3 k
2.2 k
10 V
B
E
I
E
V
B
=
2.2
10
22.2

= 0.991 V
I
E
=
B
E
V 0.7
R

=
(0.991 0.7) V
0.291mA
1k

The ac emitter resistance


e
r

=
25mV
85.91
0.291mA

[18] GATE - 2012 (TEST SERIES - 2) ELECTRICAL ENGINEERING
M
A
D
E

E
A
S
Y
C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi )
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Noi da C entre Noi da C entre Noi da C entre Noi da C entre Noi da C entre
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C lassroom Study C ourse ( C SC )
Postal Study C ourse ( PSC )
I nterview G uidance C ourse ( I G C )
I ndi a I ndi a I ndi a I ndi a I ndi as Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G AT E & PSUs T E & PSUs T E & PSUs T E & PSUs T E & PSUs
W WW WWeb: www eb: www eb: www eb: www eb: www. madeeasy . madeeasy . madeeasy . madeeasy . madeeasy. i n . i n . i n . i n . i n | || || Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n

C
o
p
y
r
i
g
h
t
:

S
u
b
j
e
c
t

m
a
t
t
e
r

t
o

I
E
S

M
A
D
E

E
A
S
Y
,

N
e
w

D
e
l
h
i
.

N
o

p
a
r
t

o
f

t
h
i
s

b
o
o
k

m
a
y

b
e

r
e
p
r
o
d
u
c
e
d

o
r

u
t
i
l
i
s
e
d

i
n

a
n
y

f
o
r
m

w
i
t
h
o
u
t

t
h
e

w
r
i
t
t
e
n

p
e
r
m
i
s
s
i
o
n
.
The voltage gain A =
c
e
R
r

=
3
3 10
34.92
85.91


The ac output voltage
v
out
= A v
in
= 34.92 1 mV
= 34.92 mV * ** **
* ** ** Because of printing error option written
as 153. 6 mV so all student will be
awarded bonus mark.
28. 28. 28. 28. 28. ( b) ( b) ( b) ( b) ( b)
The given converter is an integrator circuit.
Therefore, for the rectangular input, the
output waveform would be a triangular
wave.
29. 29. 29. 29. 29. ( d) ( d) ( d) ( d) ( d)
A swamped JFET ampli fi er offers the
following features.
1. Swamping resistor reduces the voltage
gain.
2. The changes in transconductance ( g
m
)
from one JFET to the next have less
effect on voltage gain.
3. I f r
s
is large enough the local feedback
can swamp out the nonlinearity of the
transconductance curve.
30. 30. 30. 30. 30. ( a) ( a) ( a) ( a) ( a)
The dc emitter current in the second stage
2
E
I
=
5 1.4
10 mA
360

the dc resistance of the second emitter


diode
e2
r

=
2
E
I
10
0. 10 mA
100

ac resistance of the first emitter diode.


e1
r

=
25
250
0.10

The approximate input impedance looking
into the base of the first transistor
Z
in( i)

1

2
R
E
( 100) ( 100) ( 360)
= 3.6 M
T hi s i s much larger than the bi asi ng
resistors.
The approximate input impedance of
Darlington amplifier
Z
in
= ( R
1
) ( R
2
)
= ( 100 k) ( 100 k)
= 50 k
31. 31. 31. 31. 31. ( a) ( a) ( a) ( a) ( a)
+

R
V
o
R
L
V
s
V
s
V
s
I
s
I
s
=
s o
V V
R

...( i)
and V
s
=
o
j L
V
R j L

+
...( ii)
I
s
=
s s
R j L
V V
j L
R
_ +


,
=
s
V R
R j L
_

,
=
s
V
j
L

=
10
j
2 50 10


= 10j mA
ELECTRICAL ENGINEERING POWER ELECTRONICS & ANALOG [19]
M
A
D
E

E
A
S
Y
C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi ) C orporate O ffi ce ( D elhi )
Ph: Ph: Ph: Ph: Ph: 011-45124612, 9958995830
Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre Hyderabad C entre
Ph: Ph: Ph: Ph: Ph: 040-20032005, 9160002324
Noi da C entre Noi da C entre Noi da C entre Noi da C entre Noi da C entre
Ph: Ph: Ph: Ph: Ph: 0120-6524612, 8860378009
Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre Bhopal C entre
Ph: Ph: Ph: Ph: Ph: 0755-4004612
C lassroom Study C ourse ( C SC )
Postal Study C ourse ( PSC )
I nterview G uidance C ourse ( I G C )
I ndi a I ndi a I ndi a I ndi a I ndi as Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G A s Best I nsti tute for I ES, G AT E & PSUs T E & PSUs T E & PSUs T E & PSUs T E & PSUs
W WW WWeb: www eb: www eb: www eb: www eb: www. madeeasy . madeeasy . madeeasy . madeeasy . madeeasy. i n . i n . i n . i n . i n | || || Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n Emai l: i esmadeeasy@ yahoo. co. i n

C
o
p
y
r
i
g
h
t
:

S
u
b
j
e
c
t

m
a
t
t
e
r

t
o

I
E
S

M
A
D
E

E
A
S
Y
,

N
e
w

D
e
l
h
i
.

N
o

p
a
r
t

o
f

t
h
i
s

b
o
o
k

m
a
y

b
e

r
e
p
r
o
d
u
c
e
d

o
r

u
t
i
l
i
s
e
d

i
n

a
n
y

f
o
r
m

w
i
t
h
o
u
t

t
h
e

w
r
i
t
t
e
n

p
e
r
m
i
s
s
i
o
n
.
32. 32. 32. 32. 32. ( b) ( b) ( b) ( b) ( b)
The time for which output is high
t = 0.69 R
A
C
= 0.69 7.2 10
3
0.1 10
6
= 4.968 10
4
sec.
0.5 msec.
33. 33. 33. 33. 33. ( d) ( d) ( d) ( d) ( d)
Percentage duty cycle =
A
A B
R
100
R R

+
40 =
A
A B
R
100
R R

+
B
A
R
1
R
+ =
5
2
R
B
= 1.5 R
A
= 10.8 k
34. 34. 34. 34. 34. ( c) ( c) ( c) ( c) ( c)
For singe-phase semiconverter, average
output voltage
V
o
= v
t
=
m
V
(1 cos ) +

=
330
(1 cos30 ) +

= 196.01
V
o
= E
a
+ I
a
r
a
196.01 = 80 + I
a
4
I
a
= 29 A
35. 35. 35. 35. 35. ( a) ( a) ( a) ( a) ( a)
M otor back emf
E
a
= K
m

m
80 =
m
2 1400
K
60

K
m
=
80 60
0.546 V-s/rad
2 1400


or 0.546 N-m/A
M otor torque
T
e
= K
m
I
a
= 0.546 29
= 15.834 N-m
!!!!

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