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HEXFET
Power MOSFET
01/24/01
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
JC
Junction-to-Case 1.4
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 C/W
R
JA
Junction-to-Ambient 62
Thermal Resistance
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V
DSS
= 55V
R
DS(on)
= 16.5m
I
D
= 53A
S
D
G
TO-220AB
Advanced HEXFET
C
D
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
IRFZ46N
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Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3F
50K
.2F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Fig 13b. Gate Charge Test Circuit Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01 t
p
D.U.T
L
V
DS
+
-
V
D D
DRIVER
A
1 5V
20V
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Starting T , Junction Temperature( C)
E
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
J
A
S
I
D
TOP
BOTTOM
11A
20A
28A
IRFZ46N
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Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+ -
-
-
S
T
R
R
G
V
DD
dv/dt controlled by R
G
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T*
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
Q
* Reverse Polarity of D.U.T for P-Channel
V
GS
[ ]
[ ]
*** V
GS
= 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET
power MOSFETs
IRFZ46N
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LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOU RC E
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 ( .185)
4.20 ( .165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
N OTES:
1 D IMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 C ONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
PART NUMBER I NTERNATI ONAL
RECTI FIER
LOGO
EXAMPLE : THI S I S AN IRF1010
W ITH ASSEMBLY
LOT CODE 9B1M
ASSEMBLY
LOT CODE
DATE CODE
(YYW W )
YY = YEAR
W W = W EEK
9246
IRF1010
9B 1M
A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
Data and specifications subject to change without notice.
This product has been designed and qualified for the automotive [Q101] market.
Qualification Standards can be found on IRs Web site.