Professional Documents
Culture Documents
N
T
U
W
O
R
L
D
Code No: 53009 Set No. 1
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.
I Choose the correct alternative:
1. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base
2. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage
3. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region
4. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage
5. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above
6. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c
7. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c
8. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias
9. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero
10. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above
Cont2
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No:53009 :2: Set No. 1
II Fill in the blanks
11. The ripple factor of the inductor filter ____________ with decrease in load resistance.
12. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.
13. The depletion region penetrates more into the _____________________ region.
14. Zener diode is designed to be operated in the ______________________ condition.
15. The maximum efficiency of a full wave rectifier is ___________________.
16. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.
17. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.
18. ____________________ configuration is widely used amongst three transistor configurations.
19. Ideally, stability factor should be ____________ to keep operating point stable.
20. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.
-oOo-
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No: 53009 Set No. 2
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.
I Choose the correct alternative:
1. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage
2. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above
3. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c
4. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c
5. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias
6. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero
7. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above
8. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base
9. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage
10. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region
Cont2
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No:53009 :2: Set No. 2
II Fill in the blanks
11. Zener diode is designed to be operated in the ______________________ condition.
12. The maximum efficiency of a full wave rectifier is ___________________.
13. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.
14. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.
15. ____________________ configuration is widely used amongst three transistor configurations.
16. Ideally, stability factor should be ____________ to keep operating point stable.
17. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.
18. The ripple factor of the inductor filter ____________ with decrease in load resistance.
19. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.
20. The depletion region penetrates more into the _____________________ region.
-oOo-
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No: 53009 Set No. 3
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.
I Choose the correct alternative:
1. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c
2. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c
3. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias
4. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero
5. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above
6. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base
7. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage
8. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region
9. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage
10. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above
Cont2
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No:53009 :2: Set No. 3
II Fill in the blanks
11. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.
12. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.
13. ____________________ configuration is widely used amongst three transistor configurations.
14. Ideally, stability factor should be ____________ to keep operating point stable.
15. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.
16. The ripple factor of the inductor filter ____________ with decrease in load resistance.
17. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.
18. The depletion region penetrates more into the _____________________ region.
19. Zener diode is designed to be operated in the ______________________ condition.
20. The maximum efficiency of a full wave rectifier is ___________________.
-oOo-
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No: 53009 Set No. 4
JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD
II B.Tech. I Sem., I Mid-Term Examinations, September 2011
ELECTRONIC DEVICES AND CIRCUITS
Objective Exam
Name: ______________________________ Hall Ticket No.
A
Answer All Questions. All Questions Carry Equal Marks. Time: 20 Min. Marks: 10.
I Choose the correct alternative:
1. Which transistor bias circuit arrangement has poor stability [ ]
A) collector-feedback bias B) voltage-divider bias C) fixed bias D) emitter bias
2. At saturation, the value of V
CE
is nearly ________, and I
C
=________. [ ]
A) zero, zero B) V
CC
, I
C(sat)
C) zero, I
(sat)
D) V
CC
, zero
3. Changes in
dc
results in changes in [ ]
A) I
C
B) V
CE
C) the Q-point D) all of the above
4. What is the order of doping, from heavily to lightly doped, for each region? [ ]
A) base, collector, emitter B) emitter, collector, base
C) emitter, base, collector D) collector, emitter, base
5. The voltage where large current starts to flow in a reverse biased p-n junction diode is [ ]
A) breakdown voltage B) barrier potential C) biasing voltage D) offset voltage
6. The area at the junction of p-type and n-type materials that has lost its majority carriers is called
the [ ]
A) n- region B) p- region C) breakdown region D) depletion region
7. The peak inverse voltage (PIV) across a non-conducting diode in a bridge rectifier is equal to
[ ]
A) half the peak secondary voltage B) twice the peak secondary voltage
C) the peak secondary voltage D) four time peak secondary voltage
8. The choke filters are not used now a days as they are [ ]
A) bulky B) costlier C) consume more power D) all of the above
9. The ripple factor of which filter increase with decrease in load resistance. [ ]
A) C filter B) LC-filter C) Inductor filter D) both b and c
10. What is the ratio of I
C
to I
E
? [ ]
A)
dc
B)
dc
/ (
dc
+1) C)
dc
D) both b and c
Cont2
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net
J
N
T
U
W
O
R
L
D
Code No:53009 :2: Set No. 4
II Fill in the blanks:
11. ____________________ configuration is widely used amongst three transistor configurations.
12. Ideally, stability factor should be ____________ to keep operating point stable.
13. The excess heat produced at the collector base junction due to self heating may even burn and
destroy the transistor. This is called ______________________ of the transistor.
14. The ripple factor of the inductor filter ____________ with decrease in load resistance.
15. The Depletion layer capacitance is the capacitance associated with ____________________
p-n junction diode.
16. The depletion region penetrates more into the _____________________ region.
17. Zener diode is designed to be operated in the ______________________ condition.
18. The maximum efficiency of a full wave rectifier is ___________________.
19. To bias the transistor in saturation region, the emitter-base junction is ___________ biased and
the collector-base junction is _____________ biased.
20. In common-base configuration of a transistor, when the reverse bias voltage is increased, the
width of the depletion region also increases. This is called _____________________.
-oOo-
www.jntuworld.com
www.jntuworld.com
www.jwjobs.net