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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 5, MAY 2004
AbstractWe report the results of a high-performance all-solidstate broad-band frequency multiplier chain at 1500 GHz, which
uses four cascaded planar Schottky-barrier varactor doublers. The
multipliers are driven by monolithic-microwave integrated-circuitbased high electron-mobility transistor power amplifiers around
95 GHz with 100150 mW of pump power. The design incorporates
balanced doublers utilizing novel substrateless and membrane device fabrication technologies, achieving low-loss broad-band multipliers working in the terahertz range. For a drive power of approximately 100 mW in the 8899-GHz range, the doublers achieved
room-temperature peak efficiencies of approximately 30% at the
190-GHz stage, 20% at 375 GHz, 9% at 750 GHz, and 4% at the
1500-GHz stage. When the chain was cooled to 120 K, approximately 40 W of peak output power was measured for 100 mW of
input pump power.
Index TermsBalanced doubler,
multipliers, Schottky-barrier diode.
broad-band
solid-state
I. INTRODUCTION
RADITIONALLY, frequency sources at submillimeter
wavelengths typically consisted of cascaded whisker-contacted Schottky diode frequency multipliers driven by
phased-locked Gunn oscillators [1][3]. Frequency tuning was
achieved with mechanical tuners, and multipliers were mechanically fragile. At frequencies approximately above 1 THz, the
available power was too low to drive a mixer and, thus, compact
solid-state sources gave way to massive far infrared (FIR)
lasers, where changing frequencies implies changing the gas in
the laser, and frequencies produced must be chosen from a finite
list of available laser lines. However, tremendous progress has
been made in the field of solid-state frequency multipliers in
the terahertz regime over the last couple of years [4][7]. The
major push in the technology advancement in this field is primarily driven by space-borne and ground-based astronomical
instruments, such as the Herschel Space Observatory (HSO)
[8] and Atacama large millimeter array (ALMA) [9]. The
main factors contributing to this unprecedented advancement,
both in terms of efficiency/output power and higher frequency
operations, can be attributed to a few different areas. Monolithic
microwave integrated circuit (MMIC) power amplifiers with
- to -band [10] have enabled the
impressive gain in the
use of microwave synthesizers that can be actively multiplied to
Manuscript received November 23, 2003; revised January 28, 2004. This
work was supported by the National Aeronautics and Space Administration
under a contract.
The authors are with the Jet Propulsion Laboratory, California Institute of
Technology, Pasadena CA 91125 USA.
Digital Object Identifier 10.1109/TMTT.2004.827042
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Fig. 1. Schematic block diagram of the all-solid-state 1500-GHz multiplier source using a cascade of four frequency doublers.
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 5, MAY 2004
TABLE I
SUMMARY OF MULTIPLIER DEVICES
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Fig. 3. Substrateless device fabrication process steps. (a) Ohmic and mesa
definition. (b) Interconnect metal and air-bridged Schottky deposition.
(c) Passivation and bridge metal definition. (d) Backside thinning and device
separation. (e) Release of device from carrier wafer.
Fig. 4. Membrane device fabrication process steps. (a) Ohmic and mesa
definition. (b) Interconnect metal and e-beam defined Schottky deposition.
(c) Passivation and bridge metal 1 definition. (d) Membrane layer etch and
bridge metal 2 deposition. (e) Removal of substrate with selective etch.
(f) Release of the device from the carrier wafer.
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 5, MAY 2004
Fig. 5. Assembled doublers in the split-waveguide block with the top half of the block removed. (a) 190-GHz doubler. (b) 375-GHz doubler. (c) 750-GHz doubler.
(d) 1500-GHz doubler. (e) All the doublers put together along with the MMIC power-amplifier module. The isolator and directional coupler, which are connected
between the amplifier and first stage multiplier, is not shown in (e).
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Fig. 7. Room-temperature performance of the 190-GHz doubler. The circles with the solid line is for the output power, and the triangles with the dotted line is
for the input power. Input and output power for this doubler was measured using the calorimeter.
Fig. 8. Room-temperature performance of the 375-GHz doubler. The circles with the solid line is for the output power, and the triangles with the dotted line is
for the input power. The input power was measured independently, not simultaneously with the output power. The calorimeter was used to measure the input and
output power for this doubler.
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 5, MAY 2004
Fig. 9. Performance of the 750-GHz doubler at room temperature. The calorimeter was used to measure power from this doubler. The circles with the solid line
is for the output power, and the triangles with the dotted line is for the input power. The input power was measured independently, not simultaneously with the
output power.
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Fig. 10. Performance of the 1500-GHz chain. The circles with the solid line is for the output power at room temperature, the diamonds with the dashed line is
for the output power at 120 K, and the triangles with the dotted line is for the input power. The input power was measured independently, not simultaneously with
the output power.
Fig. 11. Performance of another 1500-GHz chain. The circles and triangles with the solid lines are for the 1500-GHz output power at 120 K with the
drive power of 150 and 100 mW, respectively. The circles and triangles with the dashed lines are for the 750-GHz input pump power at 120 K with the
drive power of 150 and 100 mW, respectively.
W -band
W -band
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 52, NO. 5, MAY 2004
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