P6NK90Z

STP6NK90Z - STP6NK90ZFP
STB6NK90Z
N-CHANNEL 900V - 1.75 - 5.8A TO-220/TO-220FP/D2PAK
Zener-Protected SuperMESHPower MOSFET
TYPE
STP6NK90Z
STP6NK90ZFP
STB6NK90Z
VDSS
RDS(on)
ID
Pw
900 V
900 V
900 V
<2
<2
<2
5.8 A
5.8 A
5.8 A
140 W
30 W
140 W
TYPICAL RDS(on) = 1.75

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
3
1
TO-220
TO-220FP
3
1
D2PAK
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of STs well established stripbased PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP6NK90Z
P6NK90Z
TO-220
TUBE
STP6NK90ZFP
P6NK90ZFP
TO-220FP
TUBE
STB6NK90ZT4
B6NK90Z
D2PAK
TAPE & REEL
November 2002
1/12
STP6NK90Z - STP6NK90ZFP - STB6NK90Z

ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP6NK90Z / STB6NK90Z
VDS
VDGR
VGS
STP6NK90ZFP
Drain-source Voltage (VGS = 0)
900
Drain-gate Voltage (RGS = 20 k)
900
Gate- source Voltage
30
ID
Drain Current (continuous) at TC = 25C
5.8
5.8 (*)
ID
Drain Current (continuous) at TC = 100C
3.65
3.65 (*)
Drain Current (pulsed)
23.2
23.2 (*)
Total Dissipation at TC = 25C
140
30
Derating Factor
1.12
0.24
W/C
IDM ()
PTOT
VESD(G-S)
dv/dt (1)
Gate source ESD(HBM-C=100pF, R=1.5K)
4000
4.5
V/ns
Peak Diode Recovery voltage slope
Viso
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature

Storage Temperature
--
2500
-55 to 150
( ) Pulse width limited by safe operating area

(1) ISD 5.8A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
D2PAK
TO-220
Rthj-case
Rthj-pcb
Thermal Resistance Junction-case Max
TO-220FP
Unit
4.2
C/W
0.89
Thermal Resistance Junction-pcb Max (When
60
C/W
mounted on minimum Footprint)
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
C/W
Tl
Maximum Lead Temperature For Soldering

Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)
5.8
EAS
Single Pulse Avalanche Energy

(starting Tj = 25 C, ID = IAR, VDD = 50 V)
300
mJ
GATE-SOURCE ZENER DIODE

Symbol
BVGSO
Parameter
Gate-Source Breakdown
Voltage
Test Conditions
Igs= 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/12

ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
IDSS
Zero Gate Voltage

Drain Current (VGS = 0)
VDS = Max Rating

VDS = Max Rating, TC = 125 C
1
50
A
A
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = 20V
10
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 100A
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2.9 A
V(BR)DSS
900
Unit
3.75
4.5
1.75
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (3)
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Test Conditions
Min.
VDS =15V, ID = 2.9 A

VDS = 25V, f = 1 MHz, VGS = 0
VGS = 0V, VDS = 0V to 720V
1350
130
26
pF
pF
pF
70
pF
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time

Rise Time
VDD = 450 V, ID = 3 A
RG = 4.7 ,VGS = 10 V
(Resistive Load see, Figure 3)
Qg
Qgs
Qgd
Total Gate Charge

Gate-Source Charge
Gate-Drain Charge
VDD = 720 V, ID = 5.8 A,

VGS = 10V
Min.
Typ.
Max.
Unit
17
20
ns
ns
46.5
8.5
25
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time

Fall Time
VDD = 450 V, ID = 3 A
RG = 4.7 , VGS = 10 V
(Resistive Load see, Figure 3)
45
20
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time

Fall Time
Cross-over Time
VDD = 720V, ID = 5.8 A,

RG = 4.7 , VGS = 10V
(Inductive Load see, Figure 5)
11
12
20
ns
ns
ns
SOURCE DRAIN DIODE

Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 5.8 A, VGS = 0
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current
ISD = 5.8 A, di/dt = 100A/s

VDD = 36V, Tj = 150C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Min.
Typ.
840
5880
14
Max.
Unit
5.8
23.2
A
A
1.6
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.
3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
3/12

Safe Operating Area For TO-220/D2PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/12

Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/12

Source-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
6/12
Normalized BVDSS vs Temperature

Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For

Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
7/12
TO-220 MECHANICAL DATA

mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
D1
0.107
1.27
0.050
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
L4
H2
G1
F1
L2
F2
Dia.
L5
L9
L7
L6
8/12
L4
P011C
TO-220FP MECHANICAL DATA

mm.
DIM.
MIN.
4.4
inch
TYP
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
2.5
2.7
0.098
0.106
2.5
2.75
0.098
0.108
0.45
0.7
0.017
0.027
0.75
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9.3
0.354
0.366
3.2
0.118
0.126
L3
L3
L6
F2
G1
F1
L7
L2
L5
1 2 3
L4
9/12
D2PAK MECHANICAL DATA

mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
8.95
9.35
0.352
0.368
D1
E
0.315
10
E1
10.4
0.393
8.5
0.334
4.88
5.28
0.192
0.208
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
2.4
3.2
0.094
0.126
0.015
V2
0.4
10/12

2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix T4)*

REEL MECHANICAL DATA
DIM.
mm
MIN.
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
1.65
1.85
0.065 0.073
MAX.
MIN.
330
1.5
12.8
20.2
24.4
100
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
50
1.574
0.25
0.35 0.0098 0.0137
23.7
24.3
0.075 0.082
0.933 0.956
* on sales type
11/12
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
12/12
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Datasheets for electronics components.

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STP6NK90Z - STP6NK90ZFP

TYPICAL RDS(on) = 1.75

INTERNAL SCHEMATIC DIAGRAM

TAPE & REEL

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 k)

Gate- source Voltage

Drain Current (continuous) at TC = 25C

Drain Current (continuous) at TC = 100C

Drain Current (pulsed)

Total Dissipation at TC = 25C

Gate source ESD(HBM-C=100pF, R=1.5K)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Operating Junction Temperature

( ) Pulse width limited by safe operating area

Thermal Resistance Junction-case Max

Thermal Resistance Junction-pcb Max (When

mounted on minimum Footprint)

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering

Avalanche Current, Repetitive or Not-Repetitive

Single Pulse Avalanche Energy

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Zero Gate Voltage

VDS = Max Rating

Gate Threshold Voltage

VDS = VGS, ID = 100A

VGS = 10V, ID = 2.9 A

VDS =15V, ID = 2.9 A

VGS = 0V, VDS = 0V to 720V

Turn-on Delay Time

Total Gate Charge

VDD = 720 V, ID = 5.8 A,

Turn-off Delay Time

Off-voltage Rise Time

VDD = 720V, ID = 5.8 A,

SOURCE DRAIN DIODE

ISD = 5.8 A, VGS = 0

Reverse Recovery Time

ISD = 5.8 A, di/dt = 100A/s

Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %.

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Safe Operating Area For TO-220FP

Thermal Impedance For TO-220/D2PAK

Thermal Impedance For TO-220FP

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs Temperature

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

STP6NK90Z - STP6NK90ZFP - STB6NK90Z

TO-220 MECHANICAL DATA