B

BTA/BTB16 series

1!!!!!!!!! !!!!

!!16A Triacs logic level

MAIN FEATURES:

A2

Symbol

Value

Unit

IT(RMS)

16

VDRM/VRRM

600, 700 and 800

A1

A2

IGT (Q1)

10 to 50

mA
A1 A2

DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB16 and T16 triac series is
suitable for general purpose AC switching. They
can be used as an ON/OFF function in applications
such as static relays, heating regulation, induction
motor starting circuits... or for phase control
operation in light dimmers, motor speed
controllers, ...
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances. By using an internal ceramic pad,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734).

D2PAK
(T16-G)
A2

A1
A2
G

A1
A2
G

TO-220AB
(BTB16)

TO-220AB Insulated
(BTA16)

ABSOLUTE MAXIMUM RATINGS

Symbol
IT(RMS)

ITSM
I t
dI/dt

Parameter
RMS on-state current
(full sine wave)

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25C)
It Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns

VDSM/VRSM Non repetitive surge peak off-state

voltage
IGM
PG(AV)
Tstg
Tj

Peak gate current

Average gate power dissipation
Storage junction temperature range
Operating junction temperature range

Value
D2PAK

Unit
A

Tc = 100C

TO-220AB

16

TO-220AB Ins.

Tc = 85C

F = 60 Hz

t = 16.7 ms

168

F = 50 Hz

t = 20 ms

160

tp = 10 ms

144

As

F = 120 Hz

Tj = 125C

50

A/s

tp = 10 ms

Tj = 25C

VDRM/VRRM

tp = 20 s

Tj = 125C

Tj = 125C

- 40 to + 150
- 40 to + 125

+ 100

O
1/4

BTA/BTB16 series

!!!!!!!!!!!!!!!!!16A Triacs logic level

!

ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)

SNUBBERLESS and LOGIC LEVEL (3 Quadrants)

Symbol

IGT (1)
VGT

Test Conditions

RL = 33

VD = 12 V

VGD

VD = VDRM

IH (2)

IT = 500 mA

IL

IG = 1.2 IGT

Quadrant

RL = 3.3 k

Tj = 125C

T16

Unit

T1635

SW

CW

BW

35

10

35

50

mA

I - II - III

MAX.

I - II - III

MAX.

1.3

I - II - III

MIN.

0.2

I - III

MAX.

35

15

35

50

mA

MAX.

50

25

50

70

mA

60

30

60

80

MIN.

500

40

500

1000

V/s

8.5

A/ms

3.0

8.5

8.5

14

II
dV/dt (2)

BTA/BTB16

VD = 67 % VDRM gate open Tj = 125C

(dI/dt)c (2) (dV/dt)c = 0.1 V/s

Tj = 125C

(dV/dt)c = 10 V/s

Tj = 125C

Without snubber

Tj = 125C

MIN.

STANDARD (4 Quadrants)
Symbol

Test Conditions

IGT (1)

Quadrant

RL = 33

VD = 12 V
VGT
VGD

VD = VDRM

IH (2)

IT = 500 mA

IL

IG = 1.2 IGT

RL = 3.3 k

Tj = 125C

BTA/BTB16

25
50

50
100

Unit

MAX.

ALL

MAX.

1.3

ALL

MIN.

0.2

I - III - IV

VD = 67 % VDRM gate open Tj = 125C

(dV/dt)c (2) (dI/dt)c = 7 A/ms

I - II - III
IV

Tj = 125C

mA

MAX.

25

50

mA

MAX.

40

60

mA

80

120

MIN.

200

400

V/s

MIN.

10

V/s

Value

Unit

II
dV/dt (2)

STATIC CHARACTERISTICS
Symbol

Test Conditions

VTM (2)

ITM = 22.5 A

tp = 380 s

Tj = 25C

MAX.

1.55

Vto (2)

Threshold voltage

Tj = 125C

MAX.

0.85

Rd (2)

Dynamic resistance

Tj = 125C

MAX.

25

IDRM

VDRM = VRRM

Tj = 25C

mA

IRRM

Tj = 125C

MAX.

Note 1: minimum IGT is guaranted at 5% of IGT max.

Note 2: for both polarities of A2 referenced to A1

2/4

BTA/BTB16 series

!!!!!!!!! !!!!!!

!!!16A Triacs logic level

OTHER INFORMATION
Part Number

Marking

Weight

Base
quantity

Packing
mode

BTA/BTB16-xxxyz

BTA/BTB16xxxyz

2.3 g

250

Bulk

BTA/BTB16-xxxyzRG

BTA/BTB16-xxxyz

2.3 g

50

Tube

T1635-xxxG

T1635xxxG

1.5 g

50

Tube

T1635-xxxG-TR

T1635xxxG

1.5 g

1000

Tape & reel

Note: xxx = voltage, y = sensitivity, z = type

Fig. 1: Maximum power dissipation versus RMS

on-state current (full cycle).

20
18
16
14
12
10
8
6
4
2
0

Fig. 2-1: RMS on-state current versus case

temperature (full cycle).

P (W)

IT(RMS) (A)

IT(RMS) (A)
0

10

12

14

16

Fig. 2-2: DPAK RMS on-state current versus

ambient temperature (printed circuit board FR4,
copper thickness: 35 m), full cycle.

18
16
14
12
10
8
6
4
2
0

BTB/T16

BTA

Tc(C)
0

25

50

75

100

125

Fig. 3: Relative variation of thermal impedance

versus pulse duration.

IT(RMS) (A)

K=[Zth/Rth]

4.0

1E+0
2

D PAK
2
(S=1cm )

3.5

Zth(j-c)

3.0
2.5
1E-1

2.0

Zth(j-a)

1.5
1.0
0.5
0.0

tp (s)

Tamb(C)
0

25

50

75

100

125

1E-2
1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

3/4

BTA/BTB16 series

!!!!!!!!!!!!!!!!!!16A Triacs logic level

!

Fig. 4:
values)

On-state

characteristics

(maximum

Fig. 5: Surge peak on-state current versus

number of cycles.

ITM (A)

ITSM (A)

200
Tj max

100

10

Tj=25C

Tj max:
Vto = 0.85 V
Rd = 25 m

VTM (V)
1
0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of It.

180
160
140
120
100
80
60
40
20
0

t=20ms

One cycle

Non repetitive
Tj initial=25C

Repetitive
Tc=85C

Number of cycles
1

10

100

1000

Fig. 7: Relative variation of gate trigger current,

holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C]

ITSM (A), It (As)

2.5

3000
Tj initial=25C

2.0
IGT

dI/dt limitation:
50A/s

1000

1.5
IH & IL

1.0

ITSM

0.5
It

Tj(C)

tp (ms)
100
0.01

0.10

1.00

10.00

Fig. 8: Relative variation of critical rate of

decrease of main current versus (dV/dt)c (typical
values).

0.0
-40

20

40

60

80

100

120

140

Fig. 9: Relative variation of critical rate of

decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

2.0
1.8

SW
C

1.6
1.4

-20

1.2

BW/CW/T1635

1.0

3
2

0.8
0.6
0.4
0.1

(dV/dt)c (V/s)
1.0

10.0

100.0

Tj (C)
0

25

50

75

100

125

4/4