BTA16, BTB16

T1610, T1635

16 A Snubberless™, logic level and standard Triacs

TO-220AB TO-220AB
insulated
Features BTA16
BTB16

■ Medium current Triac

■ Low thermal resistance with clip bonding
■ Low thermal resistance insulation ceramic for
insulated BTA
■ High commutation (4Q) or very high
commutation (3Q) capability
■ BTA series UL1557 certified (File ref: 81734)
■ RoHS ( 2002/95/EC) compliant
■ Insulated tab (BTA series, rated at 2500 VRMS)

D2PAK
T1635G
T1610G
Applications A2
■ Snubberless versions (BTA/BTB...W and
T1635) especially recommended for use on G
inductive loads, because of their high A1
commutation performances
■ On/off or phase angle function in applications
such as static relays, light dimmers and
appliance motor speed controllers
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.

Table 1. Device summary

Symbol Parameter BTA16 (1) BTB16 T1610 T1635

IT(RMS) On-state rms current 16 16 16 16

VDRM/VRRM Repetitive peak off-state voltage 600/800 600/800 600/800 600/800
IGT (Snubberless) Triggering gate current 35/50 35/50 - 35
IGT (logic level) Triggering gate current 10 10 10 -
IGT (standard) Triggering gate current 25/50 25/50 - -
1. Insulated

TM: Snubberless is a trademark of STMicroelectronics

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T1610, T1635

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

D2PAK /
Tc = 100 °C
On-state rms current TO-220AB
IT(RMS) 16 A
(full sine wave) TO-220AB
Tc = 86 °C
insulated
Non repetitive surge peak on-state F = 50 Hz t = 20 ms 160
ITSM current A
(full cycle, Tj initial = 25 °C) F = 60 Hz t = 16.7 ms 168

I²t I²t value for fusing tp = 10 ms 144 A ²s

Critical rate of rise of on-state current
dI/dt F = 120 Hz Tj = 125 °C 50 A/µs
IG = 2 x IGT , tr ≤ 100 ns
VDSM/ Non repetitive surge peak off-state VDRM/VRRM
tp = 10 ms Tj = 25 °C V
VRSM voltage + 100
IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A
PG(AV) Average gate power dissipation Tj = 125 °C 1 W
Tstg Storage temperature range -40 to + 150

Tj Maximum operating junction temperature -40 to + 125

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Snubberless and logic level (3 quadrants)
BTA16 / BTB16
Symbol Test conditions Quadrant T1610 T1635 Unit
SW CW BW

IGT (1) VD = 12 V I - II - III Max. 10 35 10 35 50 mA

VGT RL = 33 Ω I - II - III Max. 1.3 V
VD = VDRM
VGD RL = 3.3 kΩ I - II - III Min. 0.2 V
Tj = 125 °C
IH (2) IT = 500 mA Max. 15 35 15 35 50 mA
I - III 25 50 25 50 70
IL IG = 1.2 IGT Max. mA
II 30 60 30 60 80
VD = 67 %VDRM
dV/dt (2) Tj = 125 °C Min. 40 500 40 500 1000 V/µs
gate open
(dV/dt)c = 0.1 V/µs Tj = 125 °C 8.5 - 8.5 - -
(dI/dt)c
(2) (dV/dt)c = 10 V/µs Tj = 125 °C Min. 3.0 - 3.0 - - A/ms
Without snubber Tj = 125 °C - 8.5 - 8.5 14
1. Minimum IGT is guaranted at 5% of IGT max
2. For both polarities of A2 referenced to A1

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Table 4. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

standard (4 quadrants)
BTA16 / BTB16
Symbol Test conditions Quadrant Unit
C B

I - II - III 25 50
IGT (1) Max. mA
VD = 12 V RL = 33 Ω IV 50 100
VGT ALL Max. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ Tj = 125 °C ALL Min. 0.2 V
IH (2) IT = 500 mA Max. 25 50 mA
I - III - IV 40 60
IL IG = 1.2 IGT Max. mA
II 80 120
dV/dt (2) VD = 67 %VDRM gate open Tj = 125 °C Min. 200 400 V/µs
(dV/dt)c
(2) (dI/dt)c = 7 A/ms Tj = 125 °C Min. 5 10 V/µs

1. Minimum IGT is guaranted at 5% of IGT max

2. For both polarities of A2 referenced to A1

Table 5. Static characteristics

Symbol Test conditions Value Unit

VT (2) ITM = 22.5 A tp = 380 µs Tj = 25 °C Max. 1.55 V

Vto (2) Threshold voltage Tj = 125 °C Max. 0.85 V
Rd (2) Dynamic resistance Tj = 125 °C Max. 25 mΩ

IDRM Tj = 25 °C 5 µA
VDRM = VRRM Max.
IRRM Tj = 125 °C 2 mA

Table 6. Thermal resistance

Symbol Parameter Value Unit

D2PAK / TO-220AB 1.2

Rth(j-c) Junction to case (AC) °C/W
TO-220AB insulated 2.1
S(1) = 1 cm² D2PAK 45
Rth(j-a) Junction to ambient TO-220AB / TO-220AB °C/W
60
insulated
1. S = Copper surface under tab

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T1610, T1635

Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle) temperature (full cycle)
P(W) IT(RMS)(A)
20 18
18 16 BTB / T16

16
14
BTA
14
12
12
10
10
8
8
6
6
4 4

2 2
IT(RMS)(A) TC(°C)
0 0
0 2 4 6 8 10 12 14 16 0 25 50 75 100 125

Figure 3. On-state rms current versus Figure 4. Relative variation of thermal

ambient temperature (full cycle) impedance versus pulse duration
IT(RMS)(A) K=[Zth/Rth]
4.0
1E+0
printed circuit board FR4, copper thickness: 35 µm
D2PAK
3.5 (S=1cm2) Zth(j-c)

3.0
Zth(j-a)
2.5

2.0 1E-1

1.5

1.0

0.5
TC(°C) tp(s)
0.0 1E-2
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0 25 50 75 100 125

Figure 5. On-state characteristics Figure 6. Surge peak on-state current versus

(maximum values) number of cycles

ITM(A) ITSM(A)
200 180
Tj max.
100 Vto = 0.85V 160
Rd = 25 mΩ
140 t=20ms

Tj = Tj max. 120 Non repetitive One cycle

Tj initial=25°C
100
Tj = 25°C.
10 80 Repetitive
TC=85°C
60

40

20
VTM(V) Number of cycles
1 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000

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T1610, T1635

Figure 7. Non-repetitive surge peak on-state Figure 8. Relative variation of gate trigger
current for a sinusoidal current
2 2
ITSM(A), I t (A s) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
3000 2.5
Tj initial=25°C holding current and latching current versus junction
dI/dt limitation: temperature (typical values)
50A/µs
2.0
IGT
1000
ITSM 1.5

IH & I L
1.0

I2t
0.5

pulse with width tp < 10 ms and corresponding value of I t

2
tp(ms) Tj(°C)
100 0.0
0.01 0.10 1.00 10.00 -40 -20 0 20 40 60 80 100 120 140

Figure 9. Relative variation of critical rate of Figure 10. Relative variation of critical rate of
decrease of main current versus decrease of main current versus
(dV/dt)c (typical values) (dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [Tj] / (dI/dt)c [Tj specified]
2.0 6
Snubberless and Logic level types Standard types
1.8 SW
5
1.6 C
B 4
1.4

1.2 T1635/CW/BW 3

1.0
2
0.8
1
0.6
(dV/dt)c (V/µs) Tj(°C)
0.4 0
0.1 1.0 10.0 100.0 0 25 50 75 100 125

Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab
(printed circuit board FR4, copper thickness: 35 µm)
Rth(j-a)(°C/W)
80

70

60

50
D2PAK
40

30

20

10
S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40

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Figure 12. Ordering information scheme (BTA16 and BTB16 series)

BT A 16 - 600 BW RG

TRIAC series
Insulation
A = insulated
B = non insulated
Current
16 = 16 A
Voltage
600 = 600 V
800 = 800 V
Sensitivity and type
B = 50 mA Standard BW = 50 mA Snubberless
C = 25 mA Standard CW = 35 mA Snubberless
SW = 10 mA Logic Level
Packing mode
RG = Tube

Figure 13. Ordering information scheme (T16 series)

T 16 35 - 600 G (-TR)

TRIAC series
Current
16 = 16 A
Sensitivity
10 = 10 mA
35 = 35 mA
Voltage
600 = 600 V
800 = 800 V
Package
2
G = D PAK
Packing mode
Blank = Tube
-TR = Tape and reel

Table 7. Product selector

Voltage (xxx)
Device(1) Sensitivity Type Package
600 V 800 V
BTA/BTB16-xxxB X X 50 mA Standard TO-220AB
BTA/BTB16-xxxBW X X 50 mA Snubberless TO-220AB
BTA/BTB16-xxxC X 25 mA Standard TO-220AB
BTA/BTB16-xxxCW X X 35 mA Snubberless TO-220AB
BTA/BTB16-xxxSW X X 10 mA Logic level TO-220AB
T1610-xxxG X X 10 mA Logic level D2PAK
T1635-xxxG X X 35 mA Snubberless D2PAK
1. BTB: non insulated TO-220AB package

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