Vs-St330cseries - Tiristor Da Therma

VS-ST330C Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors

(Hockey PUK Version), 720 A
FEATURES
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
RoHS
COMPLIANT
Designed and qualified for industrial level

Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-200AB (E-PUK)
TYPICAL APPLICATIONS
DC motor controls
PRODUCT SUMMARY
Controlled DC power supplies
Package
TO-200AB (E-PUK)
Diode variation
Single SCR
IT(AV)
720 A
VDRM/VRRM
400 V, 800 V, 1200 V, 1400 V, 1600 V
VTM
1.96 V
IGT
100 mA
TJ
-40 C to 125 C
AC controllers
MAJOR RATINGS AND CHARACTERISTICS

PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2t
UNITS
720
55
1420
25
50 Hz
9000
60 Hz
9420
50 Hz
405
60 Hz
370
VDRM/VRRM
tq
VALUES
Typical
TJ
A
kA2s
400 to 1600
100
-40 to 125
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST330C..C
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE

PEAK AND OFF-STATE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
VRSM, MAXIMUM
IDRM/IRRM MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
AT TJ = TJ
V
MAXIMUM mA
50
Revision: 20-Dec-13
Document Number: 94407
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-ST330C Series
www.vishay.com
ABSOLUTE MAXIMUM RATINGS

PARAMETER
SYMBOL
Maximum average on-state current

at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle

non-repetitive surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180 conduction, half sine wave
double side (single side) cooled
9000
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
for fusing
I2t
1420
t = 10 ms
I2t
55 (75)
t = 10 ms
t = 8.3 ms
No voltage
reapplied
9420
100 % VRRM
reapplied
7920
No voltage
reapplied
Sinusoidal half wave,

initial TJ = TJ maximum
100 % VRRM
reapplied
405
370
287
t = 0.1 to 10 ms, no voltage reapplied
4050
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.91
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
0.92
Low level value of on-state slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.58
High level value of on-state slope resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.57
Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.96
VTM
IH
Typical latching current
IL
TJ = 25 C, anode supply 12 V resistive load
kA2s
262
VT(TO)1
Maximum on-state voltage
7570
Low level value of threshold voltage
Maximum holding current
UNITS
720 (350)
DC at 25 C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
VALUES
600
1000
kA2s
V
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
dI/dt
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 s
TJ = TJ maximum, anode voltage 80 % VDRM
VALUES
UNITS
1000
A/s
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/s

Vd = 0.67 % VDRM, TJ = 25 C
1.0
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s,

VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s
100
SYMBOL
TEST CONDITIONS
VALUES
UNITS
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/s
Maximum peak reverse and

off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
Revision: 20-Dec-13
2
VS-ST330C Series
www.vishay.com
TRIGGERING
PARAMETER
SYMBOL
PGM
Maximum peak gate power
PG(AV)
Maximum average gate power

Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
IGT
DC gate current required to trigger
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
TJ = TJ maximum, tp 5 ms
3.0
TJ = -40 C
200
TJ = 25 C
100
200
TJ = 25 C
IGD
TJ = TJ maximum
VGD
DC gate voltage not to trigger
5.0
Maximum required gate trigger/

current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage

not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
UNITS
20
TJ = 125 C
DC gate current not to trigger
MAX.
10.0
TJ = 125 C
VGT
TYP.
TJ = -40 C
DC gate voltage required to trigger
VALUES
TEST CONDITIONS
50
2.5
1.8
3.0
1.1
mA
10
mA
0.25
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER
SYMBOL
Maximum operating junction temperature range

Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
TEST CONDITIONS
TJ
-40 to 125
TStg
-40 to 150
RthJ-hs
RthC-hs
DC operation single side cooled
0.09
DC operation double side cooled
0.04
DC operation single side cooled
0.02
DC operation double side cooled
0.01
Mounting force, 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
K/W
9800
(1000)
N
(kg)
83
TO-200AB (E-PUK)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180
0.012
0.011
0.008
0.007
120
0.014
0.012
0.014
0.013
90
0.017
0.015
0.019
0.017
60
0.025
0.022
0.026
0.023
30
0.043
0.036
0.043
0.037
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 20-Dec-13
3
VS-ST330C Series
130
ST330C..C Series
(Single Side Cooled)
RthJ-hs (DC) = 0.09 K/ W
120
110
Conduction Angle
100
30
90
60
90
120
180
80
70
0
50 100 150 200 250 300 350 400
Maximum Allowable Heatsink Temperature (C)
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130
ST330C..C Series
(Double Side Cooled)
120
110
100
90
80
Conduction Period
70
30
60
60
50
90
120
40
180
30
20
DC
10
0
Average On-state Current (A)
Fig. 4 - Current Ratings Characteristics
ST330C..C Series
R thJ-hs (DC) = 0.09 K/ W
120
110
100
90
Conduction Period
80
70
60
50
40
60
90
120 180
30
30
DC
20
0
100 200 300 400 500 600 700 800 900
Maximum Average On-state Power Loss (W)
130
1400
180
120
90
60
30
1200
1000
600
Conduction Angle
400
ST330C..C Series
TJ = 125C
200
0
0
100
90
80
Conduction Angle
70
60
30
50
60
90
40
120
180
30
20
0
200
400
600
800

1000
Maximum Average On-state Power Loss (W)
Fig. 5 - On-State Power Loss Characteristics
ST330C..C Series
110
100 200 300 400 500 600 700 800

120
RMS Limit
800
130
200 400 600 800 1000 1200 1400 1600
1800
DC
180
120
90
60
30
1600
1400
1200
1000 RMSLimit
800
Conduction Period
600
400
ST330C..C Series
TJ = 125C
200
0
0
200
400
600
800
1000 1200
Fig. 6 - On-State Power Loss Characteristics
Revision: 20-Dec-13
4
VS-ST330C Series
8000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
www.vishay.com
At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.
Initial TJ = 125C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
7500
7000
6500
6000
5500
5000
4500
ST330C..C Series
4000
3500
1
10
100
9000
Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control
8000 Of Conduc tion May Not Be Maintained.
Initial TJ = 125C
7500
No Voltage Reapplied
Rated VRRM Reapplied
7000
8500
6500
6000
5500
5000
4500
ST330C..C Series
4000
3500
0.01
0.1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled
Instantaneous On-state Current (A)
10000
TJ = 25C
TJ = 125C
1000
ST330C..C Series
100
0
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJ-hs (K/ W)
Fig. 9 - On-State Voltage Drop Characteristics
0.1
Steady State Value

RthJ-hs = 0.09 K/ W
R thJ-hs = 0.04 K/ W
(DC Operation)
0.01
ST330C..C Series
0.001
0.001
0.01
0.1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

Revision: 20-Dec-13
5
VS-ST330C Series
www.vishay.com
Rectangular gate pulse

a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr<=1 s
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
10
tr<=1 s
(1) PGM = 10W,

(2) PGM = 20W,
(3) PGM = 40W,
(4) PGM = 60W,
tp
tp
tp
tp
= 4 ms
= 2 ms
= 1 ms
= 0.66 ms
(a)
(b)
Tj=-40 C
Tj=25 C
Tj=125 C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3) (4)
VGD
IGD
0.1
0.001
Frequency Limited by PG(AV)
Device: ST330C..C Series
0.01
0.1
10
100
Instantaneous Gate Current (A)
Fig. 11 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
ST
33
16
Vishay Semiconductors product
Thyristor
Essential part number
0 = Converter grade
C = Ceramic PUK
Voltage code x 100 = VRRM (see Voltage Ratings table)
C = PUK case TO-200AB (E-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Critical dV/dt:
None = 500 V/s (standard selection)

L = 1000 V/s (special selection)
LINKS TO RELATED DOCUMENTS

Dimensions
http://www.vishay.com/doc?95075
Revision: 20-Dec-13
6
Outline Dimensions
TO-200AB (E-PUK)
DIMENSIONS in millimeters (inches)
Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum
25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.
14.1/15.1
(0.56/0.59)
0.3 (0.01) MIN.

25.3 (0.99)
DIA. MAX.
Gate terminal for

1.47 (0.06) DIA.
pin receptacle
40.5 (1.59) DIA. MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

6.5 (0.26)
4.75 (0.19)
25 5
42 (1.65) MAX.
28 (1.10)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Revision: 01-Aug-07
For technical questions, contact: indmodules@vishay.com
www.vishay.com
1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12

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VS-ST330C Series

Phase Control Thyristors

Designed and qualified for industrial level

Controlled DC power supplies

400 V, 800 V, 1200 V, 1400 V, 1600 V

MAJOR RATINGS AND CHARACTERISTICS

VDRM/VRRM, MAXIMUM REPETITIVE

ABSOLUTE MAXIMUM RATINGS

Maximum average on-state current

Maximum peak, one-cycle

Sinusoidal half wave,

t = 0.1 to 10 ms, no voltage reapplied

(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum

High level value of threshold voltage

(I > x IT(AV)), TJ = TJ maximum

Low level value of on-state slope resistance

(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum

High level value of on-state slope resistance

(I > x IT(AV)), TJ = TJ maximum

Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse

Typical latching current

TJ = 25 C, anode supply 12 V resistive load

Maximum on-state voltage

Low level value of threshold voltage

Maximum holding current

DC at 25 C heatsink temperature double side cooled

Maximum I2t for fusing

Typical delay time

Gate current 1 A, dIg/dt = 1 A/s

Typical turn-off time

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s,

TJ = TJ maximum linear to 80 % rated VDRM

Maximum peak reverse and

TJ = TJ maximum, rated VDRM/VRRM applied

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate voltage

Maximum peak negative gate voltage

DC gate current required to trigger

DC gate voltage not to trigger

Maximum required gate trigger/

Maximum gate current/voltage

THERMAL AND MECHANICAL SPECIFICATIONS

Maximum operating junction temperature range

Maximum thermal resistance, case to heatsink

DC operation single side cooled

DC operation double side cooled

DC operation single side cooled

DC operation double side cooled

See dimensions - link at the end of datasheet

50 100 150 200 250 300 350 400

Maximum Allowable Heatsink Temperature (C)

Maximum Allowable Heatsink Temperature (C)

Average On-state Current (A)

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

100 200 300 400 500 600 700 800 900

Maximum Average On-state Power Loss (W)

Maximum Allowable Heatsink Temperature (C)

Fig. 1 - Current Ratings Characteristics

Average On-state Current (A)

Maximum Average On-state Power Loss (W)

Maximum Allowable Heatsink Temperature (C)