6.

012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-1

Lecture 11 - MOSFET (III)

MOSFET Equivalent Circuit Models
October 18, 2005

Contents:
1. Low-frequency small-signal equivalent circuit model
2. High-frequency small-signal equivalent circuit model
Reading assignment:
Howe and Sodini, Ch. 4, 4.5-4.6

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-2

Key questions
What is the topology of a small-signal equivalent circuit model of the MOSFET?
What are the key dependencies of the leading model
elements in saturation?

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-3

1. Low-frequency small-signal equivalent circuit model

Regimes of operation of MOSFET:
VDSsat=VGS-VT
ID

saturation

linear
ID
VDS
VGS

VGS

VBS
VGS=VT
0
0

cutoff

VDS

Cut-off:
ID = 0
Linear:
W
VDS
ID = nCox (VGS
VT )VDS
L
2
Saturation:
W
nCox (VGS VT )2 [1+(VDS VDSsat)]
ID = IDsat =
2L
Effect of back bias:
r

VT (VBS ) = VT o + ( 2p VBS 2p )

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-4

Small-signal device modeling

In many applications, interested in response of device to
a small-signal applied on top of bias:
ID+id

vgs +
-

VGS

+
v
- ds
+
v
- bs
VBS

VDS

Key points:
Small-signal is small
response of non-linear components becomes linear
Can separate response of MOSFET to bias and small
signal.
Since response is linear, superposition can be used
effects of different small signals are independent
from each other

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-5
MOSFET
small-signal
equivalent
circuit model

ID+id

+
v
- ds
+
v
- bs
VBS

vgs +
-

VGS

VDS

ID

id

VDS
VGS

VBS

vgs +
-

Mathematically:
iD (VGS + vgs, VDS + vds, VBS + vbs) '
ID
ID
ID
ID (VGS , VDS , VBS )+
| vgs +
| vds +
| vbs
VGS Q
VDS Q
VBS Q
where Q bias point (VGS , VDS , VBS )
Small-signal id:
id ' gm vgs + govds + gmb vbs
Define:
gm transconductance [S]
go output or drain conductance [S]
gmb backgate transconductance [S]
Then:
gm '

ID
|Q
VGS

go '

ID
|Q
VDS

gmb '

ID
|Q
VBS

+
v
- ds
+
v
- bs

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-6

2 Transconductance
In saturation regime:
W
nCox (VGS VT )2 [1 + (VDS VDSsat)]
ID =
2L
Then (neglecting channel length modulation):
ID
W
| ' nCox (VGS VT )
gm =
VGS Q
L
Rewrite in terms of ID :
v
u
u
u
u
t

gm = 2

W
nCox ID
L
gm

gm

saturation

saturation

cut-off

0
0

VT

VGS

ID

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-7

Transconductance of 3 m nMOSFET (VDS = 2 V ):

Equivalent circuit model representation of gm :

id
G

vgs
S

gmvgs

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-8

2 Output conductance
In saturation regime:
ID =

W
nCox (VGS VT )2 [1 + (VDS VDSsat)]
2L

Then:
go =

ID
W
ID
nCox (VGS VT )2 ' ID
|Q =
VDS
2L
L

Output resistance is inverse of output conductance:

ro =
go

1
L

go ID
go
saturation

saturation

cut-off

0
0

0
VT

VGS

ID

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-9

Output conductance of 3 m nMOSFET:

Equivalent circuit model representation of go :

id
G

vgs
S

ro

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-10

2 Backgate transconductance
In saturation regime (neglect channel-length modulation):
W
nCox (VGS VT )2
ID '
2L
Then:
gmb

ID
W
VT
=
| = nCox (VGS VT )(
| )
VBS Q
L
VBS Q

Since:
r

VT (VBS ) = VT o + ( 2p VBS 2p )
Then:
VT

r
| =
VBS Q 2 2p VBS
All together:
gmb =

gm
2 2p VBS
r

gmb inherits all dependencies of gm

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-11

Body of MOSFET is a true gate: output characteristics

for different values of VBS (VBS = 0 (3) V, VBS =
0.5 V , VGS = 2 V ):

Equivalent circuit model representation of gmb :

id
G

vgs
S

vbs
B

gmbvbs

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-12

Complete MOSFET small-signal equivalent circuit model

for low frequency:
id
G

vgs
S

vbs
B

gmvgs

gmbvbs

ro

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-13

2. High-frequency small-signal equivalent circuit model

Need to add capacitances. In saturation:
gate

Cfringe
source

Cgs,i

n+

n+

Cov

Cjsw

Cfringe
drain
Cov

n+

Csb,i

Cj

Cjsw
Cj

p
body

Cgs intrinsic gate capacitance

+ overlap capacitance, Cov (+fringe)
Cgd overlap capacitance, Cov
(+fringe)
Cgb (only parasitic capacitance)
Csb source junction depletion capacitance
+sidewall (+channel-substrate capacitance)
Cdb drain junction depletion capacitance
+sidewall

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-14

Complete MOSFET high-frequency small-signal equivalent circuit model:

id

Cgd
G

vgs
S

Cgs

gmbvbs

ro

vbs
B

gmvgs

Csb

Cdb

Plan for development of capacitance model:

Start with Cgs,i
compute gate charge QG = (QN + QB )
compute how QG changes with VGS
Add pn junction capacitances

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-15

Inversion layer charge in saturation

QN (VGS ) = W

L
0 Qn (y)dy

=W

VGS VT
0

Qn(Vc )

dy
dVc
dVc

But:
dVc
ID
=
dy
W nQn(Vc )
Then:
W 2Ln Z VGS VT 2
Qn(Vc )dVc
QN (VGS ) =
0
ID
Remember:
Qn(Vc ) = Cox (VGS Vc VT )
Then:
2 Z
W 2Ln Cox
VGS VT
2
QN (VGS ) =
(V

V
)
dVc
GS
c
T
0
ID

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-16

Do integral, substitute ID in saturation and get:

2
QN (VGS ) = W LCox (VGS VT )
3
Gate charge:
QG(VGS ) = QN (VGS ) QB,max
Intrinsic gate-to-source capacitance:
Cgs,i

dQG
2
=
= W LCox
dVGS 3

Must add overlap capacitance:

2
Cgs = W LCox + W Cov
3
Gate-to-drain capacitance - only overlap capacitance:
Cgd = W Cov

6.012 - Microelectronic Devices and Circuits - Fall 2005

body

Lecture 11-17

polysilicon gate

source

drain

gate
n+
p+

n+

n+
p

inversion layer
channel

gate oxide

gate length

p+

n+

n+

n+

gate width

n+

STI edge

Body-to-source capacitance = source junction capacitance:

v
u
u
u
u
t
diff u

Csb = Cj +Cjsw = W L

qsNa
+(2Ldiff +W )CJ SW
2(B VBS )

Body-to-drain capacitance = drain junction capacitance:

v
u
u
u
u
t
diff u

Cdb = Cj +Cjsw = W L

qs Na
+(2Ldiff +W )CJ SW
2(B VBD )

6.012 - Microelectronic Devices and Circuits - Fall 2005

Lecture 11-18

Key conclusions
High-frequency small-signal equivalent circuit model of
MOSFET:
id

Cgd
G

vgs
S

Cgs

gmbvbs

gmvgs

vbs
B

Csb

Cdb

In saturation:
v
u
u
u
u
t

W
gm
ID
L

go

ID
L

Cgs W LCox

ro