A733

PNP Epitaxial Silicon Transistor

LOW FREQUENCY AMPLIFIER

Collector-Emitter Voltage: VCEO=-50V
Collector Dissipation: PC(max)=250mW

Absolute Maximum Ratings (TA=25oC)

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

IC

-150

mA

Collector Dissipation

PC

250

mW

Junction Temperature

TJ

150

Storage Temperature

TSTG

-55~+150

C
C

Electrical Characteristics (TA=25oC)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

BVCBO

IC= -5A, IE=0

-60

Collector-Emitter Breakdown Voltage

BVCEO

IC= -1mA, IB=0

-50

Emitter-Base Breakdown Voltage

BVEBO

IE= -50A, IC=0

-5

Collector Cut-off Current

ICBO

VCB= -60V, IE=0

0.1

Emitter Cut-off Current

IEBO

VEB= -5V, IC=0

01

DC Current Gain

hFE

VCE= -6V, IC= -1mA

Collector-Emitter Saturation Voltage

Transition Frequency

VCE(sat)
fT

90

IC= -100mA, IB= -10mA

200

600

-0.18

-0.3

VCE= -6V, IC= -10mA

f= 30MHz

50

180

MHz

hFE CLASSIFICATION
Classification
hFE

R
90-180

Q
135-270

Elite Enterprises (H.K.) Co., Ltd.

Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990
Email: info@elite-ent.com.hk

P
200-400

K
300-600

Part No.: A733

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