PN2222A

MMBT2222A

PZT2222A
C

E
C

TO-92

BE

SOT-23

SOT-223

Mark: 1P

MMPQ2222

SOIC-16

NMT2222

C2
E1
C1

C
B2
E2

SOT-6

B1

Mark: .1B

NPN General Purpose Amplifier

This device is for use as a medium power amplifier and switch
requiring collector currents up to 500 mA. Sourced from Process 19.

Absolute Maximum Ratings*

Symbol

TA = 25C unless otherwise noted

Parameter

Value

Units
V

VCEO

Collector-Emitter Voltage

40

VCBO

Collector-Base Voltage

75

VEBO

Emitter-Base Voltage

6.0

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

1.0

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

1997 Fairchild Semiconductor Corporation

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

Discrete POWER & Signal

Technologies

(continued)

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
V(BR)CEO

Collector-Emitter Breakdown Voltage*

I C = 10 mA, IB = 0

40

V(BR)CBO

Collector-Base Breakdown Voltage

I C = 10 A, IE = 0

75

V(BR)EBO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I E = 10 A, I C = 0
VCE = 60 V, VEB(OFF) = 3.0 V

6.0

ICEX
ICBO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCB = 60 V, IE = 0
VCB = 60 V, I E = 0, TA = 150C
VEB = 3.0 V, IC = 0

IBL

Base Cutoff Current

VCE = 60 V, VEB(OFF) = 3.0 V

V
10

nA

0.01
10
10

A
A
nA

20

nA

ON CHARACTERISTICS
hFE

DC Current Gain

VCE(sat )

Collector-Emitter Saturation Voltage*

VBE( sat)

Base-Emitter Saturation Voltage*

SMALL SIGNAL CHARACTERISTICS

I C = 0.1 mA, VCE = 10 V

I C = 1.0 mA, VCE = 10 V
I C = 10 mA, VCE = 10 V
I C = 10 mA, VCE = 10 V, TA = -55C
I C = 150 mA, VCE = 10 V*
I C = 150 mA, VCE = 1.0 V*
I C = 500 mA, VCE = 10 V*
I C = 150 mA, IB = 15 mA
I C = 500 mA, IB = 50 mA
I C = 150 mA, IB = 1.0 mA
I C = 500 mA, IB = 5.0 mA

35
50
75
35
100
50
40

0.6

300

0.3
1.0
1.2
2.0

V
V
V
V

(except MMPQ2222 and NMT2222)

fT

Current Gain - Bandwidth Product

IC = 20 mA, VCE = 20 V, f = 100 MHz

Cobo

Output Capacitance

VCB = 10 V, IE = 0, f = 100 kHz

8.0

pF

Cibo
rbCC

Input Capacitance

VEB = 0.5 V, IC = 0, f = 100 kHz

25

pF

Collector Base Time Constant

IC = 20 mA, VCB = 20 V, f = 31.8 MHz

150

pS

NF

Noise Figure

4.0

dB

Re(hie)

Real Part of Common-Emitter

High Frequency Input Impedance

IC = 100 A, VCE = 10 V,
RS = 1.0 k, f = 1.0 kHz
IC = 20 mA, VCE = 20 V, f = 300 MHz

60

10

ns
ns

SWITCHING CHARACTERISTICS

300

MHz

(except MMPQ2222 and NMT2222)

td

Delay Time

VCC = 30 V, VBE(OFF) = 0.5 V,

tr

Rise Time

I C = 150 mA, IB1 = 15 mA

25

ts

Storage Time

VCC = 30 V, IC = 150 mA,

225

ns

tf

Fall Time

I B1 = IB2 = 15 mA

60

ns

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Thermal Characteristics
Symbol
PD

TA = 25C unless otherwise noted

Characteristic

Max

RJC

Total Device Dissipation

Derate above 25C
Thermal Resistance, Junction to Case

RJA

Thermal Resistance, Junction to Ambient

Symbol
PD

PN2222A
625
5.0
83.3

*PZT2222A
1,000
8.0

200

125

Characteristic

mW
mW/C
C/W
C/W

Max
**MMBT2222A
350
2.8
357

Total Device Dissipation

Derate above 25C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die

RJA

Units

Units

MMPQ2222
1,000
8.0

mW
mW/C
C/W
C/W
C/W

125
240

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

500
VCE = 5V

400
125 C

300
200
25 C

100
- 40 C

0
0.1

0.3

1
3
10
30
100
I C - COLLECTOR CURRENT (mA)

300

VBESAT- BASE-EMITTER VOLTAGE (V)

P 19

= 10

- 40 C

0.8

25 C

0.6

125 C

0.4
1
IC

10
100
- COLLECTOR CURRENT (mA)

Collector-Emitter Saturation
Voltage vs Collector Current
0.4
= 10
0.3
125 C

0.2
25 C

0.1
- 40 C

10
100
I C - COLLECTOR CURRENT (mA)

500

P 19

Base-Emitter Saturation
Voltage vs Collector Current
1

VCESAT- COLLECTOR-EMITTER VOLTAGE (V)

Typical Pulsed Current Gain

vs Collector Current

500

VBE(ON)- BASE-EMITTER ON VOLTAGE (V)

h FE - TYPICAL PULSED CURRENT GAIN

Typical Characteristics

Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8
- 40 C

0.6

25 C

125 C

0.4

0.2
0.1

1
10
I C - COLLECTOR CURRENT (mA)
P 19

25

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Typical Characteristics

(continued)

Emitter Transition and Output

Capacitance vs Reverse Bias Voltage

500
100

CB

20

= 40V
CAPACITANCE (pF)

I CBO- COLLECTOR CURRENT (nA)

Collector-Cutoff Current
vs Ambient Temperature

10
1
0.1

f = 1 MHz

16
12
C te

8
C ob

4
25

50
75
100
125
TA - AMBIENT TEMPERATURE ( C)

150

0.1

1
10
REVERSE BIAS VOLTAGE (V)

100

P 19

Switching Times
vs Collector Current

Turn On and Turn Off Times

vs Collector Current
400
IB1 = IB2 =

10

320
TIME (nS)

V cc = 25 V

240
160
t off

80

V cc = 25 V

240
ts

160

tr
tf

80

td

t on

0
10

Ic

IB1 = IB2 =

100
I C - COLLECTOR CURRENT (mA)

0
10

1000

100
I C - COLLECTOR CURRENT (mA)
P 19

Power Dissipation vs
Ambient Temperature
1
PD - POWER DISSIPATION (W)

TIME (nS)

320

400

Ic
10

SOT-223

0.75

TO-92

0.5

SOT-23

0.25

25

50
75
100
o
TEMPERATURE ( C)

125

150

1000

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier

(continued)

Test Circuits
30 V

200

16 V
1.0 K

0
200ns

500

FIGURE 1: Saturated Turn-On Switching Time

6.0 V

- 15 V

1k

30 V
1.0 K

0
200ns

50

FIGURE 2: Saturated Turn-Off Switching Time

37

PN2222A / MMBT2222A / MMPQ2222 / NMT2222 / PZT2222A

NPN General Purpose Amplifier